JP2012517663A - 大面積プラズマ処理装置 - Google Patents
大面積プラズマ処理装置 Download PDFInfo
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- JP2012517663A JP2012517663A JP2011548794A JP2011548794A JP2012517663A JP 2012517663 A JP2012517663 A JP 2012517663A JP 2011548794 A JP2011548794 A JP 2011548794A JP 2011548794 A JP2011548794 A JP 2011548794A JP 2012517663 A JP2012517663 A JP 2012517663A
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- 239000003990 capacitor Substances 0.000 claims abstract description 24
- 238000009826 distribution Methods 0.000 claims description 24
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- 239000007924 injection Substances 0.000 claims description 14
- 230000005284 excitation Effects 0.000 abstract description 9
- 230000005672 electromagnetic field Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 14
- 230000010363 phase shift Effects 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
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- 239000000203 mixture Substances 0.000 description 4
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- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
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- 238000006557 surface reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
- H01J37/32256—Tuning means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
- H01J37/32284—Means for controlling or selecting resonance mode
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
a. 少なくとも1つの平面アンテナ、
b. 前記アンテナを励起する少なくとも1つの高周波発生装置、
c. 気体注入システム及び拡散器、
d. 前記アンテナに近接する処理チャンバ、
を有する。
Ψ=-R2-X1、η=R1-X2(+90°の位相シフトの場合)
Ψ=R2-X1、η=-R1-X2(-90°の位相シフトの場合)
両信号についてのRF電力注入点38と39は、励起される共振モードmに依存する。適切に接続されているときには、このような給電構成となることで、図9に図示されているように、脚部1-100内での電流分布は正弦状となる。このように電流分布が進行することで、プラズマ加熱は非常に均一となる。
Claims (14)
- プラズマ処理用装置であって、
当該装置は:
少なくとも1つの平面アンテナ;
前記アンテナを励起する少なくとも1つの高周波発生装置;
気体注入システム及び拡散器;
d. 前記アンテナに近接する処理チャンバ、
を有し
前記平面プラズマアンテナは、複数の相互接続した基本共振メッシュを有し、
各メッシュは少なくとも2つの導電性脚部と少なくとも2つのキャパシタを有し、それにより前記アンテナは複数の共振周波数を有し、
前記高周波発生装置は、前記アンテナを、該アンテナの複数の共振周波数のうちの位置の共振周波数にまで励起させる、
装置。 - 前記導電性脚部は互いに平行である、請求項1に記載の装置。
- 基本共振メッシュは2つの平行で長い導電性脚部を有し、
前記2つの平行で長い導電性脚部の端部は、前記脚部の延在する方向に対する横方向の短い接続素子によって相互接続される、
請求項2に記載の装置。 - 前記横方向の短い接続素子は互いに対向するキャパシタを有する、請求項3に記載の装置。
- 前記平行で長い導電性脚部は互いに対向するキャパシタを有し、
各キャパシタは、各対応する脚部の長さの間で直列接続する、
請求項3又は4に記載の装置。 - 前記基本共振メッシュは、共通の脚部によって相互接続することで、はしご形状の共振アンテナを形成する、請求項2乃至5のうちいずれか1項に記載の装置。
- 前記アンテナに対して平行な導電性プレート、及び、前記アンテナの共振周波数を調節できるように前記プレートの相対位置を調節する手段をさらに有する、請求項1乃至6のうちいずれか1項に記載の装置。
- 前記アンテナ付近に磁場を発生させる手段をさらに有する、上記請求項のうちいずれかに記載の装置。
- 前記磁場を発生させる手段が永久磁石のアレイを有する、請求項8に記載の装置。
- 前記アンテナ内のDC電流を、前記高周波電流に重ね合わせるように注入する手段をさらに有する請求項8に記載の装置であって、
前記アンテナ内のDC電流が前記高周波電流に重ね合わせるように注入されることで、前記DC電流は前記アンテナ付近に磁場を発生させる、
装置。 - 少なくとも1つの補助アンテナをさらに有する、上記請求項のうちいずれかに記載の装置。
- 前記アンテナは前記処理チャンバ内部に設けられる、上記請求項のうちいずれかに記載の装置。
- 少なくとも1つの整合ネットワークをさらに有する、上記請求項のうちいずれかに記載の装置。
- 前記高周波発生装置は、2つの異なる注入点にて少なくとも2つの位相シフトしたRF出力信号を、前記アンテナに供給し、該供給の結果、前記アンテナの脚部での電流分布時間の並進が起こる、上記請求項のうちいずれかに記載の装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IB2009/050549 WO2010092433A1 (en) | 2009-02-10 | 2009-02-10 | Apparatus for large area plasma processing |
Publications (2)
Publication Number | Publication Date |
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JP2012517663A true JP2012517663A (ja) | 2012-08-02 |
JP5506826B2 JP5506826B2 (ja) | 2014-05-28 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011548794A Active JP5506826B2 (ja) | 2009-02-10 | 2009-02-10 | 大面積プラズマ処理装置 |
Country Status (10)
Country | Link |
---|---|
US (1) | US10242843B2 (ja) |
EP (1) | EP2396804B1 (ja) |
JP (1) | JP5506826B2 (ja) |
CN (1) | CN102318034B (ja) |
BR (1) | BRPI0924314B1 (ja) |
CA (1) | CA2752183C (ja) |
ES (1) | ES2475265T3 (ja) |
PL (1) | PL2396804T3 (ja) |
RU (1) | RU2507628C2 (ja) |
WO (1) | WO2010092433A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10388493B2 (en) * | 2011-09-16 | 2019-08-20 | Lam Research Corporation | Component of a substrate support assembly producing localized magnetic fields |
US10861679B2 (en) * | 2014-09-08 | 2020-12-08 | Tokyo Electron Limited | Resonant structure for a plasma processing system |
EP3292559B1 (en) * | 2015-05-04 | 2019-08-07 | Ecole Polytechnique Federale de Lausanne (EPFL) | Method, measurement probe and measurement system for determining plasma characteristics |
ES2894648T3 (es) * | 2015-07-03 | 2022-02-15 | Tetra Laval Holdings & Finance | Película o lámina de barrera y material de envasado laminado que comprende la película o lámina y el recipiente de envasado preparado a partir del mismo |
DE102016107400B4 (de) | 2015-12-23 | 2021-06-10 | VON ARDENNE Asset GmbH & Co. KG | Induktiv gekoppelte Plasmaquelle und Vakuumprozessieranlage |
JP7135529B2 (ja) * | 2018-07-19 | 2022-09-13 | 日新電機株式会社 | プラズマ処理装置 |
Citations (9)
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JPH0737697A (ja) * | 1993-07-22 | 1995-02-07 | Hitachi Ltd | プラズマ発生装置 |
JPH11195499A (ja) * | 1997-12-29 | 1999-07-21 | Anelva Corp | プラズマ処理装置 |
JP2000058297A (ja) * | 1989-08-14 | 2000-02-25 | Lam Res Corp | プラズマ処理システム |
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-
2009
- 2009-02-10 CA CA2752183A patent/CA2752183C/en active Active
- 2009-02-10 BR BRPI0924314-3A patent/BRPI0924314B1/pt active IP Right Grant
- 2009-02-10 PL PL09786305T patent/PL2396804T3/pl unknown
- 2009-02-10 ES ES09786305.4T patent/ES2475265T3/es active Active
- 2009-02-10 RU RU2011137425/07A patent/RU2507628C2/ru active
- 2009-02-10 WO PCT/IB2009/050549 patent/WO2010092433A1/en active Application Filing
- 2009-02-10 CN CN200980156455.XA patent/CN102318034B/zh active Active
- 2009-02-10 EP EP09786305.4A patent/EP2396804B1/en active Active
- 2009-02-10 JP JP2011548794A patent/JP5506826B2/ja active Active
- 2009-02-10 US US13/148,536 patent/US10242843B2/en active Active
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JP2000058297A (ja) * | 1989-08-14 | 2000-02-25 | Lam Res Corp | プラズマ処理システム |
JPH0737697A (ja) * | 1993-07-22 | 1995-02-07 | Hitachi Ltd | プラズマ発生装置 |
JP2001511945A (ja) * | 1994-12-06 | 2001-08-14 | ラム リサーチ コーポレーション | 大形加工物用のプラズマ加工機 |
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Also Published As
Publication number | Publication date |
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CA2752183A1 (en) | 2010-08-19 |
ES2475265T3 (es) | 2014-07-10 |
RU2011137425A (ru) | 2013-03-20 |
WO2010092433A1 (en) | 2010-08-19 |
RU2507628C2 (ru) | 2014-02-20 |
CA2752183C (en) | 2018-12-11 |
CN102318034B (zh) | 2014-07-23 |
EP2396804A1 (en) | 2011-12-21 |
US20110308734A1 (en) | 2011-12-22 |
JP5506826B2 (ja) | 2014-05-28 |
PL2396804T3 (pl) | 2014-08-29 |
US10242843B2 (en) | 2019-03-26 |
EP2396804B1 (en) | 2014-03-26 |
CN102318034A (zh) | 2012-01-11 |
BRPI0924314B1 (pt) | 2020-02-18 |
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