CN102272894A - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN102272894A
CN102272894A CN2010800040969A CN201080004096A CN102272894A CN 102272894 A CN102272894 A CN 102272894A CN 2010800040969 A CN2010800040969 A CN 2010800040969A CN 201080004096 A CN201080004096 A CN 201080004096A CN 102272894 A CN102272894 A CN 102272894A
Authority
CN
China
Prior art keywords
substrate
shower
insulation board
basal surface
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800040969A
Other languages
English (en)
Chinese (zh)
Inventor
若松贞次
龟崎厚治
菊池正志
神保洋介
江藤谦次
浅利伸
内田宽人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of CN102272894A publication Critical patent/CN102272894A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN2010800040969A 2009-01-09 2010-01-06 等离子体处理装置 Pending CN102272894A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009004022 2009-01-09
JP2009-004022 2009-01-09
PCT/JP2010/000057 WO2010079753A1 (fr) 2009-01-09 2010-01-06 Appareil de traitement par plasma

Publications (1)

Publication Number Publication Date
CN102272894A true CN102272894A (zh) 2011-12-07

Family

ID=42316519

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800040969A Pending CN102272894A (zh) 2009-01-09 2010-01-06 等离子体处理装置

Country Status (6)

Country Link
JP (1) JP5394403B2 (fr)
KR (1) KR101290738B1 (fr)
CN (1) CN102272894A (fr)
DE (1) DE112010000717B4 (fr)
TW (1) TW201110828A (fr)
WO (1) WO2010079753A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112563158A (zh) * 2019-09-26 2021-03-26 株式会社爱发科 真空处理装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103031514B (zh) * 2011-09-30 2015-09-02 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置、具有其的pvd设备及pvd设备的控制方法
US11901162B2 (en) 2019-01-07 2024-02-13 Ulvac, Inc. Vacuum processing apparatus and method of cleaning vacuum processing apparatus
JP7510457B2 (ja) 2022-04-06 2024-07-03 株式会社アルバック プラズマ処理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227859A (ja) * 1994-11-30 1996-09-03 Applied Materials Inc Ｃｖｄ処理チャンバ
JPH08260158A (ja) * 1995-01-27 1996-10-08 Kokusai Electric Co Ltd 基板処理装置
JPH0955374A (ja) * 1995-06-08 1997-02-25 Tokyo Electron Ltd プラズマ処理装置
JPH09205132A (ja) * 1996-01-25 1997-08-05 Sumitomo Metal Ind Ltd クランプ板
CN1516890A (zh) * 2001-08-27 2004-07-28 ���µ�����ҵ��ʽ���� 等离子体处理装置及等离子体处理方法
CN1521805A (zh) * 2003-02-07 2004-08-18 ���������ƴ���ʽ���� 等离子体处理装置、环形部件和等离子体处理方法
CN101042989A (zh) * 2006-03-22 2007-09-26 东京毅力科创株式会社 等离子体处理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW434745B (en) * 1995-06-07 2001-05-16 Tokyo Electron Ltd Plasma processing apparatus
JP3002448B1 (ja) * 1998-07-31 2000-01-24 国際電気株式会社 基板処理装置
JP4116066B1 (ja) 2007-06-21 2008-07-09 七山 美智賜 磁気データ消去装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227859A (ja) * 1994-11-30 1996-09-03 Applied Materials Inc Ｃｖｄ処理チャンバ
JPH08260158A (ja) * 1995-01-27 1996-10-08 Kokusai Electric Co Ltd 基板処理装置
JPH0955374A (ja) * 1995-06-08 1997-02-25 Tokyo Electron Ltd プラズマ処理装置
JPH09205132A (ja) * 1996-01-25 1997-08-05 Sumitomo Metal Ind Ltd クランプ板
CN1516890A (zh) * 2001-08-27 2004-07-28 ���µ�����ҵ��ʽ���� 等离子体处理装置及等离子体处理方法
CN1521805A (zh) * 2003-02-07 2004-08-18 ���������ƴ���ʽ���� 等离子体处理装置、环形部件和等离子体处理方法
CN101042989A (zh) * 2006-03-22 2007-09-26 东京毅力科创株式会社 等离子体处理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112563158A (zh) * 2019-09-26 2021-03-26 株式会社爱发科 真空处理装置
CN112563158B (zh) * 2019-09-26 2024-04-19 株式会社爱发科 真空处理装置

Also Published As

Publication number Publication date
DE112010000717T5 (de) 2012-07-05
JPWO2010079753A1 (ja) 2012-06-21
TW201110828A (en) 2011-03-16
DE112010000717T8 (de) 2013-04-18
WO2010079753A1 (fr) 2010-07-15
JP5394403B2 (ja) 2014-01-22
KR20110089453A (ko) 2011-08-08
KR101290738B1 (ko) 2013-07-29
DE112010000717B4 (de) 2014-02-20

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Application publication date: 20111207