WO2010061519A1 - Esd保護デバイス及びその製造方法 - Google Patents
Esd保護デバイス及びその製造方法 Download PDFInfo
- Publication number
- WO2010061519A1 WO2010061519A1 PCT/JP2009/005463 JP2009005463W WO2010061519A1 WO 2010061519 A1 WO2010061519 A1 WO 2010061519A1 JP 2009005463 W JP2009005463 W JP 2009005463W WO 2010061519 A1 WO2010061519 A1 WO 2010061519A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cavity
- protection device
- esd protection
- discharge
- electrode
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T4/00—Overvoltage arresters using spark gaps
- H01T4/10—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
- H01T4/12—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel hermetically sealed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T1/00—Details of spark gaps
- H01T1/20—Means for starting arc or facilitating ignition of spark gap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T21/00—Apparatus or processes specially adapted for the manufacture or maintenance of spark gaps or sparking plugs
Definitions
- the present invention relates to an ESD protection device and a method for manufacturing the same, and more particularly, to a technique for improving ESD characteristics and reliability of an ESD protection device in which discharge electrodes are arranged to face each other in a cavity of an insulating substrate.
- ESD Electro-Static Discharge
- a charged conductive object such as a human body
- another conductive object such as an electronic device
- ESD causes problems such as damage and malfunction of electronic devices. In order to prevent this, it is necessary to prevent an excessive voltage generated during discharge from being applied to the circuit of the electronic device.
- An ESD protection device is used for such an application, and is also called a surge absorbing element or a surge absorber.
- the ESD protection device is disposed, for example, between the signal line of the circuit and the ground (ground). Since the ESD protection device has a structure in which a pair of discharge electrodes are spaced apart from each other, the ESD protection device has a high resistance in a normal use state, and a signal does not flow to the ground side. On the other hand, when an excessive voltage is applied, for example, when static electricity is applied from an antenna such as a mobile phone, a discharge occurs between the discharge electrodes of the ESD protection device, and the static electricity can be guided to the ground side. Thereby, a voltage due to static electricity is not applied to a circuit subsequent to the ESD device, and the circuit can be protected.
- the ESD protection device shown in the exploded perspective view of FIG. 8 and the cross-sectional view of FIG. 9 is a discharge electrode in which a cavity 5 is formed in a ceramic multilayer substrate 7 on which an insulating ceramic sheet 2 is laminated and is electrically connected to an external electrode 1.
- 6 is disposed oppositely in the cavity 5, and the discharge gas is confined in the cavity 5.
- a voltage causing dielectric breakdown is applied between the discharge electrodes 6, a discharge occurs between the discharge electrodes 6 in the cavity 5, and an excessive voltage is guided to the ground by the discharge, thereby protecting the subsequent circuit.
- the ESD responsiveness is likely to fluctuate due to variations in the interval between the discharge electrodes.
- region which a discharge electrode opposes it is difficult to implement
- the present invention intends to provide an ESD protection device that can easily adjust and stabilize ESD characteristics and a method for manufacturing the same.
- the present invention provides an ESD protection device configured as follows.
- the ESD protection device comprises (a) an insulating substrate, (b) a cavity formed inside the insulating substrate, and (c) at least a pair of discharge electrodes having an exposed portion exposed in the cavity. (D) having an external electrode formed on the surface of the insulating substrate and connected to the discharge electrode.
- An auxiliary electrode in which conductive powder is dispersed is formed along a bottom surface and a top surface that form the cavity between the exposed portions of the discharge electrode.
- the auxiliary electrode for generating creeping discharge is formed on both the bottom surface and the top surface of the cavity, the ESD response can be further improved as compared with the case where the auxiliary electrode is formed only on one side. it can.
- an interval between the bottom surface forming the cavity and the top surface is equal to a thickness of the discharge electrode.
- the insulating substrate is a ceramic substrate.
- the auxiliary electrode has an insulating material dispersed together with the conductive powder.
- the present invention provides a method for manufacturing an ESD protection device configured as follows.
- the auxiliary electrode is formed by attaching the conductive powder to the one main surface of the first insulating layer and the one main surface of the second insulating layer in a dispersed state, respectively.
- a cavity that exposes at least part of the discharge electrode and part of each of the pair of discharge electrodes is formed between the first insulating layer and the second insulating layer in the stacked body. Is done.
- a cavity forming layer made of a disappearing material is formed on at least a part of the auxiliary electrode to be exposed between the discharge electrodes in the second step.
- the third step after the second insulating layer is also disposed on the cavity forming layer, at least a part of the cavity forming layer is eliminated to form the cavity.
- the cavity forming layer prevents the auxiliary electrode from being peeled off, and the cavity can be formed reliably.
- the cavity forming layer is formed using, for example, a material such as a resin paste or a carbon paste that disappears during firing of the stack obtained in the fourth step.
- the auxiliary electrode is formed by electrophotography.
- Example 1 It is sectional drawing of an ESD protection device.
- Example 1 It is sectional drawing which shows the manufacturing process of an auxiliary electrode.
- Example 1 It is the schematic of a paste.
- Example 1 It is sectional drawing of an ESD protection device.
- Example 2 It is a principal part expanded sectional view of an auxiliary electrode.
- Example 3 It is a principal part expanded sectional view of an auxiliary electrode.
- Comparative Example 1 It is a principal part expanded sectional view of an auxiliary electrode.
- Comparative Example 2 It is a disassembled perspective view of an ESD protection device.
- Conventional example It is sectional drawing of an ESD protection device.
- Conventional example It is sectional drawing of an ESD protection device. (Conventional example)
- Example 1 An ESD protection device 10 of Example 1 will be described with reference to FIGS.
- FIG. 1 is a cross-sectional view of the ESD protection device 10.
- the ESD protection device 10 has a cavity 13 formed inside a substrate body 12 of an insulating substrate such as a ceramic multilayer substrate or a resin substrate.
- the hollow part 13 it arrange
- the ends 16k and 18k of the discharge electrodes 16 and 18 are formed to face each other with a space therebetween.
- the discharge electrodes 16 and 18 extend to the outer peripheral surface of the substrate body 12 and are connected to external electrodes 22 and 24 formed on the surface of the substrate body 12.
- the external electrodes 22 and 24 are used for mounting the ESD protection device 10.
- conductive powder 60 is contained in the insulating material forming the substrate main body 12 in regions indicated by chain lines along the top surface 13 p and the bottom surface 13 s forming the cavity portion 13.
- Dispersed auxiliary electrodes 14p and 14s are formed.
- the ESD protection device 10 when a voltage of a predetermined level or more is applied between the external electrodes 22 and 24, a discharge occurs between the opposing discharge electrodes 16 and 18 in the cavity 13.
- This discharge is a creeping discharge that occurs mainly along the interface between the cavity 13 and the substrate body 12.
- the auxiliary electrodes 14s and 14p including the conductive powder 60 are formed along the bottom surface 13s and the top surface 13p that form the cavity 13, so that the electrons easily move and discharge more efficiently. A phenomenon can be caused. Therefore, it is possible to reduce the variation in the ESD response due to the variation in the interval between the discharge electrodes. Therefore, adjustment and stabilization of the ESD characteristics are facilitated.
- auxiliary electrodes 14p and 14s are made of an insulating material together with the conductive powder, contact between the conductive powder is prevented by the insulating material, so that occurrence of a short circuit is suppressed. Furthermore, when the insulating material is made of the same material as the substrate body, the adhesion between the auxiliary electrode and the substrate body is improved.
- the discharge electrodes 16 and 18 are formed such that the ends 16k and 18k exposed in the cavity 13 are included in the same plane, and a bottom surface 13s that forms the cavity 13 on both sides with respect to the same plane, and A top surface 13p is formed.
- Ceramic green sheet A ceramic green sheet for forming the substrate body 12 is produced.
- a material (BAS material) having a composition centered on Ba, Al, and Si is used as the ceramic material.
- Each raw material is prepared and mixed so as to have a predetermined composition, and calcined powder obtained by calcining at 800 ° C. to 1000 ° C. is pulverized for 12 hours with a zirconia ball mill to obtain ceramic powder.
- An organic solvent such as toluene and echinene is added to and mixed with the ceramic powder after calcination of the BAS material.
- a binder and a plasticizer are added and mixed to obtain a slurry.
- the slurry thus obtained is molded onto a PET film by a doctor blade method to obtain a ceramic green sheet having an arbitrary thickness (10 ⁇ m to 50 ⁇ m).
- Electrode paste An electrode paste for forming the discharge electrodes 16 and 18 is prepared.
- An electrode paste is obtained by adding a solvent to a binder resin composed of 80 wt% Cu powder having an average particle diameter of about 2 ⁇ m and ethyl cellulose, and stirring and mixing.
- the resin paste used for forming the cavity 13 is prepared.
- the resin paste consists only of a resin and a solvent, and is produced by the same method as the electrode paste.
- the resin material for example, a resin that disappears upon burning, decomposition, melting, vaporization, or the like, such as PET, polypropylene, ethyl cellulose, or an acrylic resin, is used.
- discharge electrodes 14p and 14s are formed on the surfaces 11p and 11s, which are one main surface of the ceramic green sheets 11a and 11b, by screen printing or electrophotography.
- the ceramic green sheets 11a and 11b on which the auxiliary electrodes 14p and 14s are formed are prepared as a top surface side 11a and a bottom surface side 11b.
- Typical types of pastes for forming auxiliary electrodes are prepared by the following methods.
- the paste 50 is obtained by preparing Cu powder 60 having an average particle diameter of about 3 ⁇ m at a predetermined ratio, adding a binder resin and a solvent 70, stirring and mixing. Resin and solvent are 70 wt%, and the remaining 30 wt% is Cu powder.
- the paste 50 has a lower viscosity (30 Pa ⁇ s) than a normal electrode paste (80 Pa ⁇ s). Since the paste 50 has a low content of the Cu powder 60, the paste 50 maintains insulation even after firing.
- the paste 52 is made of Al 2 O 3 coated Cu powder 64 having an average particle diameter of about 3 ⁇ m, in which the Cu powder 61 is coated with an Al 2 O 3 coating layer 62, at a predetermined ratio. It is obtained by adding the binder resin and the solvent 72, stirring and mixing. Resin and solvent 72 are 50 wt%, and the remaining 50 wt% is Al 2 O 3 coated Cu powder 64.
- the paste 52 has a lower viscosity (30 Pa ⁇ s) than a normal electrode paste (80 Pa ⁇ s). Since the paste 52 uses the Al 2 O 3 coated Cu powder 64, the insulating property is maintained even after firing.
- the paste 54 is prepared by mixing Cu powder 60 having an average particle diameter of about 3 ⁇ m and BAS material calcined ceramic powder 66 at a predetermined ratio, and adding a binder resin and a solvent 74. Obtained by stirring and mixing. Resin and solvent 74 are 40 wt%, Cu powder 60 is 40 wt%, and ceramic powder 66 is 20 wt%.
- the paste 54 has a lower viscosity (30 Pa ⁇ s) than a normal electrode paste (80 Pa ⁇ s). Since the paste 54 includes the ceramic powder 66 in addition to the Cu powder 60, the paste 54 maintains insulation even after firing.
- the paste 56 is prepared by blending Al 2 O 3 coated Cu powder 64 having an average particle diameter of about 3 ⁇ m and BAS material calcined ceramic powder 66 at a predetermined ratio to obtain a binder resin. And solvent 76 are added, and the mixture is stirred and mixed. Resin and solvent 76 are 40 wt%, Al 2 O 3 coated Cu powder 64 is 50 wt%, and ceramic powder 66 is 10 wt%.
- the paste 56 has a lower viscosity (30 Pa ⁇ s) than a normal electrode paste (80 Pa ⁇ s).
- the paste 56 uses Al 2 O 3 coated Cu powder 65 and ceramic powder 67 and maintains insulation even after firing.
- the auxiliary electrode is formed by applying an auxiliary electrode forming paste on a ceramic green sheet by screen printing.
- auxiliary electrode itself remains insulative after firing.
- the toner is prepared as follows. 1. Cu powder (average particle size 3 ⁇ m) and resin are mixed, and the surface of the Cu powder is coated with a resin using a surface treatment machine. 2. Above 1. The sample is classified to remove fine powder and coarse powder. 3. 2. The capsule Cu powder obtained by the above operation and the external additive are mixed, and the external additive is uniformly adhered to the surface of the capsule Cu powder by a surface treatment machine. 4). 3. above. The capsule Cu powder obtained by the above operation and a carrier are mixed to obtain a toner as a developer.
- the auxiliary electrode is formed as follows. 1. The photoreceptor is charged uniformly. 2. The photosensitive member charged by the LED is irradiated with light on the shape of the auxiliary electrode to form a latent image. 3. A developing bias is applied to develop the toner on the photoreceptor. The amount of toner applied can be controlled by the magnitude of the developing bias. 4). The photosensitive member on which the pattern of the auxiliary electrode is developed and the ceramic green sheet are stacked, and the toner is transferred to the ceramic green sheet. 5. The ceramic green sheet on which the auxiliary electrode pattern is transferred is placed in an oven to fix the toner, thereby obtaining a ceramic green sheet on which the auxiliary electrode pattern is formed.
- auxiliary electrode itself remains insulative after firing.
- an auxiliary electrode in which the conductive powder is uniformly dispersed can be easily manufactured, and a short-circuit can be prevented by reliably maintaining the interval between the particles of the conductive powder. Responsiveness can be realized.
- auxiliary electrode itself remains insulative after firing.
- Discharge electrode formation, cavity formation As shown in FIG. 2, an electrode paste is applied by screen printing on the ceramic green sheet 11b on which the discharge electrode 14s on the bottom side is formed, and discharge is generated between the tips 16k and 18k. Discharge electrodes 16 and 18 having a gap are formed.
- the discharge electrode was formed in a strip shape so that the width of the discharge electrode was 100 ⁇ m and the discharge gap (distance between the tips of the opposing discharge electrodes) was 30 ⁇ m.
- a resin paste is applied at a position where a cavity is to be formed to form a cavity forming layer 15.
- the resin paste disappears by subsequent firing, and a cavity is formed in the portion where the resin paste was present.
- the ceramic green sheets 11a and 11b are mounted with the surfaces 11p and 11s of the ceramic green sheets 11a and 11b on which the discharge electrodes 16 and 18 are formed facing each other. Laminate and press to form a laminate. At this time, the auxiliary electrode is pressed against the ceramic green sheet by the cavity forming layer. Therefore, it is possible to prevent the auxiliary electrode from peeling off and to reliably form the cavity.
- the ceramic green sheets were laminated so that the thickness of the laminate was 0.35 mm and the discharge electrode and the cavity were arranged in the center in the thickness direction.
- Plating Electrolytic Ni and Sn plating is performed on the external electrodes of the chip after firing in the same manner as chip-type components such as LC filters.
- the ceramic material of the substrate main body 12 is not particularly limited to the above-described materials, and may be any insulating material, such as forsterite added with glass, CaZrO 3 added with glass, Others may be used.
- the electrode material of the discharge electrodes 16 and 18 is not limited to Cu, but may be Ag, Pd, Pt, Al, Ni, W, or a combination thereof.
- the conductive powder used for the auxiliary electrode 14 is preferably not only Cu but also at least one metal selected from a transition metal group such as Ni, Co, Ag, Pd, Rh, Ru, Au, Pt, and Ir. .
- a transition metal group such as Ni, Co, Ag, Pd, Rh, Ru, Au, Pt, and Ir.
- these metals may be used alone, they can also be used as alloys.
- oxides of these metals may be used.
- a semiconductor material such as SiC may be used.
- inorganic materials and the like Al 2 O 3, ZrO 2, SiO 2 in these metals may be used after coating the mixed calcined material such as BAS. Or what coated organic materials, such as resin, may be used. By using these coat powders, the contact between the conductive powders is inhibited, and the short circuit resistance is improved.
- the average particle diameter of the conductive powder of the auxiliary electrode is preferably in the range of 0.05 ⁇ m to 10 ⁇ m, and more preferably in the range of 0.1 ⁇ m to 5 ⁇ m.
- Resin paste was used to form the cavity 13, but carbon or the like may be used as long as it disappears upon firing, not resin.
- Example 2 An ESD protection device 10a of Example 2 will be described with reference to FIG.
- the ESD protection device 10a of the second embodiment has substantially the same configuration as the ESD protection device 10 of the first embodiment.
- the same components as those in the first embodiment are denoted by the same reference numerals, and differences from the first embodiment will be mainly described.
- FIG. 4 is a cross-sectional view of the ESD protection device 10a.
- the height of the cavity 13a formed inside the substrate body 12a is equal to the thickness of the discharge electrodes 16 and 18. That is, the distance between the bottom surface 13 s and the top surface 13 q forming the hollow portion 13 a is equal to the thickness of the discharge electrodes 16 and 18.
- the height of the cavity 13a can be made equal to the thickness of the discharge electrodes 16 and 18 by adjusting the thickness of the cavity forming layer formed before laminating the ceramic green sheets.
- Example 3 An ESD protection device 10b of Example 3 will be described with reference to FIG.
- the ESD protection device 10b of Example 3 has substantially the same configuration as the ESD protection device 10a of Example 2.
- the thicknesses of the auxiliary electrodes 14r and 14t formed along the top surface 13q and the bottom surface 13s of the cavity portion 13b are the same as those of the ESD protection device 10a of the second embodiment. It is larger than the thickness of the auxiliary electrodes 14p and 14s. By increasing the thickness of the auxiliary electrodes 14p and 14s, it is possible to maintain a constant ESD response even when the discharge repeatedly occurs.
- the auxiliary electrodes 14q and 14t can be formed thick by increasing the coating amount of the auxiliary electrode paste or by repeatedly forming the auxiliary electrodes. .
- screen printing was repeated twice to form auxiliary electrodes 14q and 14t.
- the auxiliary electrodes 16p and 16s were formed by one screen printing.
- the ESD protection device 10x of Comparative Example 1 is configured in substantially the same manner as the ESD protection device 10 of Example 1, and the height of the cavity 13 formed inside the substrate body 12x. Is larger than the thickness of the discharge electrodes 16, 18.
- the second embodiment is different from the first embodiment in that the auxiliary electrode 14s is formed only along the bottom surface 13s of the cavity 13 between the discharge electrodes 16 and 18, and the auxiliary electrode is not formed on the top surface 13p side.
- the ESD protection device 10y of Comparative Example 2 is configured in substantially the same manner as the ESD protection device 10a of Example 2, and the height of the cavity 13a formed inside the substrate body 12y. Is equivalent to the thickness of the discharge electrodes 16, 18.
- the second embodiment is different from the second embodiment in that the auxiliary electrode 14s is formed only along the bottom surface 13s forming the hollow portion 13a, and the auxiliary electrode is not formed on the top surface 13q side.
- discharge responsiveness to ESD between discharge electrodes was evaluated with 100 samples.
- the discharge response to ESD was performed by an electrostatic discharge immunity test defined in IEC standard, IEC61000-4-2. It was examined whether or not discharge occurred between the discharge electrodes of the sample by applying 2 kV to 8 kv by contact discharge.
- Table 1 The comparison results are shown in Table 1 below.
- Table 1 a circle indicates that a discharge occurred between the discharge electrodes of the sample and the ESD protection function was activated.
- the ESD responsiveness can be enhanced by forming discharge electrodes for generating creeping discharge along the bottom surface and the top surface forming the cavity. Therefore, it is possible to reduce the variation in the ESD response due to the variation in the interval between the discharge electrodes. Therefore, adjustment and stabilization of the ESD characteristics are facilitated.
Abstract
Description
まず、基板本体12、放電電極16,18、空洞部13を形成するため材料を作製する。
基板本体12を形成するためのセラミックグリーンシートを作製する。セラミック材料には、Ba、Al、Siを中心とした組成からなる材料(BAS材)を用いる。各素材を所定の組成になるよう調合、混合し、800℃~1000℃で仮焼して得られた仮焼粉末を、ジルコニアボールミルで12時間粉砕し、セラミック粉末を得る。このBAS材仮焼後セラミック粉末に、トルエン・エキネンなどの有機溶媒を加え混合する。さらにバインダー、可塑剤を加え混合し、スラリーを得る。このようにして得られたスラリーを、ドクターブレード法によりPETフィルム上へ成形し、任意の厚み(10μm~50μm)のセラミックグリーンシートを得る。
放電電極16,18を形成するための電極ペーストを作製する。平均粒径約2μmのCu粉80wt%とエチルセルロース等からなるバインダー樹脂に溶剤を添加し、攪拌、混合することで、電極ペーストを得る。
空洞部13を形成するために用いる樹脂ペーストを作製する。樹脂ペーストは、樹脂と溶剤のみからなり、電極ペーストと同様の方法にて作製する。樹脂材料には、例えば、PET、ポリプロピレン、エチルセルロース、アクリル樹脂など、焼成時に燃焼、分解、溶融、気化などにより消失する樹脂を用いる。
図2に示すように、セラミックグリーンシート11a,11bの一方主面である表面11p、11sに、スクリーン印刷法もしくは電子写真法により、放電電極14p,14sを形成する。補助電極14p,14sを形成したセラミックグリーンシート11a,11bは、天面側用11aと底面側用11bの2枚を準備する。
スクリーン印刷法による場合は、補助電極形成用のペーストを作製し、作製したペーストを用いて補助電極を形成する。
図3(a)の概略図に示すように、ペースト50は、平均粒径約3μmのCu粉60を所定の割合で調合し、バインダー樹脂と溶剤70を添加し攪拌、混合することで得る。樹脂と溶剤を70wt%とし、残りの30wt%をCu粉とする。ペースト50は、通常の電極ペースト(80Pa・s)よりも低粘度(30Pa・s)の状態にする。このペースト50は、Cu粉60の含有率が低いため、焼成後も絶縁性を保つ。
図3(b)の概略図に示すように、ペースト52は、Cu粉61がAl2O3被覆層62で被覆された平均粒径約3μmのAl2O3コートCu粉64を所定の割合で調合し、バインダー樹脂と溶剤72を添加し攪拌、混合することで得る。樹脂と溶剤72を50wt%とし、残りの50wt%をAl2O3コートCu粉64とする。ペースト52は、通常の電極ペースト(80Pa・s)よりも低粘度(30Pa・s)の状態にする。このペースト52は、Al2O3コートCu粉64を用いているため、焼成後も絶縁性を保つ。
図3(c)の概略図に示すように、ペースト54は、平均粒径約3μmのCu粉60とBAS材仮焼後セラミック粉66を所定の割合で調合し、バインダー樹脂と溶剤74を添加し、攪拌、混合することで得る。樹脂と溶剤74を40wt%とし、Cu粉60を40wt%、セラミック粉66を20wt%とする。ペースト54は、通常の電極ペースト(80Pa・s)よりも低粘度(30Pa・s)の状態にする。このペースト54は、Cu粉60以外にセラミック粉66を含むため、焼成後も絶縁性を保つ。
図3(d)の概略図に示すように、ペースト56は、平均粒径約3μmのAl2O3コートCu粉64とBAS材仮焼後セラミック粉66を所定の割合で調合し、バインダー樹脂と溶剤76を添加し、攪拌、混合することで得る。樹脂と溶剤76を40wt%とし、Al2O3コートCu粉64を50wt%、セラミック粉66を10wt%とする。ペースト56は、通常の電極ペースト(80Pa・s)よりも低粘度(30Pa・s)の状態にする。ペースト56は、Al2O3コートCu粉65とセラミック粉67とを用いており、焼成後も絶縁性を保つ。
補助電極は、セラミックグリーンシート上に、スクリーン印刷にて、補助電極形成用ペーストを塗布することにより形成する。
電子写真法により補助電極を形成する場合は、まず、補助電極形成用材料として、導電粉末のトナーに加工し、作製したトナーを用いて補助電極を形成する。
トナーは次のように作製する。
1.Cu粉(平均粒径3μm)と樹脂を混合し、表面処理機を用いてCu粉の表面に樹脂を被覆する。
2.上記1.のサンプルを分級し、微粉と粗粉を除去する。
3.上記2.の操作によって得られたカプセルCu紛と外添剤を混合し、表面処理機にてカプセルCu紛表面に外添剤を均一に付着させる。
4.上記3.の操作によって得られたカプセルCu紛とキャリアを混合し、現像剤となるトナーを得る。
補助電極は次のように形成する。
1.感光体を一様に帯電させる。
2.LEDにて帯電した感光体に、補助電極の形状に光を照射し、潜像を形成する。
3.現像バイアスをかけ、感光体上にトナーを現像する。トナーの塗布量は、現像バイアスの大きさによって制御することができる。
4.補助電極のパターンが現像された感光体とセラミックグリーンシートを重ね、トナーをセラミックグリーンシートに転写する。
5.補助電極のパターンが転写されたセラミックグリーンシートをオーブンに入れ、トナーを定着させ、補助電極のパターンが形成されたセラミックグリーンシートを得る。
インクジェット法による場合は、Cu粒を含有するインク、すなわち補助電極形成用材料を、インクジェット法にてセラミックグリーンシート上に塗布する。
図2に示すように、底面側の放電電極14sを形成したセラミックグリーンシート11b上に、スクリーン印刷にて電極ペーストを塗布し、先端16k,18k間に放電ギャップを有する放電電極16,18を形成する。
図2において矢印11xで示すように、放電電極16,18が形成されたセラミックグリーンシート11a,11bの表面11p、11sが互いに対向した状態で、セラミックグリーンシート11a,11bを積層し、圧着して、積層体を形成する。このとき、空洞部形成層により補助電極はセラミックグリーンシートに押圧される。そのため、補助電極の剥離を防ぎ、確実に空洞部を形成できる。
ESD保護デバイスの複数個分を含むように積層体を形成する場合には、積層体を、LCフィルタのようなチップタイプの部品と同様に金型を用いて切断して、各チップの個片に分割する。後述する作製例では1.0mm×0.5mmになるようにカットした。その後、各チップの端面に電極ペーストを塗布し、外部電極を形成する。
外部電極を形成したチップを、通常の多層部品と同様に、N2雰囲気中で焼成する。セラミックグリーンシートの間に挟まれた樹脂ペーストは焼成時に消失し、これによって空洞部13が形成される。ESDに対する応答電圧を下げるため空洞部13にAr、Neなどの希ガスを導入する場合には、セラミック材料の収縮、焼結が行われる温度領域をAr、Neなどの希ガス雰囲気で焼成すればよい。酸化しない電極材料(Agなど)の場合には、大気雰囲気でもかまわない。
焼成後のチップの外部電極上に、LCフィルタのようなチップタイプの部品と同様に、電解Ni、Snメッキを行う。
比較例1、2と実施例1~3のESD保護デバイスを作製し、ESD特性を比較した。
12 基板本体(絶縁性基板)
13,13a 空洞部
13p,13q 天面
13s 底面
14p,14q,14s,14t 補助電極
15 空洞部形成層
16 放電電極
18 放電電極
60 Cu粉(導電粉末)
64 Al2O3コートCu粉(導電粉末)
Claims (7)
- 絶縁性基板と、
前記絶縁性基板の内部に形成された空洞部と、
前記空洞部内に露出する露出部分を有する、少なくとも一対の放電電極と、
前記絶縁性基板の表面に形成され、前記放電電極と接続された外部電極と、
を有するESD保護デバイスであって、
前記放電電極の前記露出部分の間の前記空洞部を形成する底面及び天面に沿って、導電粉末が分散された補助電極が形成されていることを特徴とする、ESD保護デバイス。 - 前記空洞部を形成する前記底面と前記天面との間隔が、前記放電電極の厚みと同等であることを特徴とする、請求項1に記載のESD保護デバイス。
- 前記絶縁性基板がセラミック基板であることを特徴とする、請求項1又は2に記載のESD保護デバイス。
- 前記補助電極が前記導電粉末とともに絶縁材料が分散されてなることを特徴とする、請求項1乃至3のいずれか一つに記載のESD保護デバイス。
- 第一の絶縁層の一方主面と第二の絶縁層の一方主面とに、それぞれ、導電粉末を分散した状態で付着させて補助電極を形成する、第1の工程と、
前記第一の絶縁層の前記一方主面に、間隔を設けて少なくとも一対の放電電極を、該放電電極の間に前記第一の絶縁層の前記一方主面に形成された前記補助電極の少なくとも一部分が露出するように、形成する、第2の工程と、
前記第一の絶縁層の前記一方主面と前記第二の絶縁層の前記一方主面とが互いに対向した状態で、前記第一の絶縁層と前記第二の絶縁層とを積層する、第3の工程と、
前記第3の工程により得られた積層体の表面に、前記放電電極と接続された外部電極を形成する、第4の工程と、
を備え、
前記積層体の内部において前記第一の絶縁層と前記第二の絶縁層との間に、前記放電電極の少なくとも一部と前記一対の放電電極のそれぞれの一部とが露出する空洞部が形成されることを特徴とする、ESD保護デバイスの製造方法。 - 前記第2の工程において前記放電電極の間に露出させるべき前記補助電極の少なくとも一部分の上に、消失材料からなる空洞部形成層を形成し、
前記第3の工程において前記空洞部形成層の上にも前記第二の絶縁層を配置した後、前記空洞部形成層の少なくとも一部を消失させることにより、前記空洞部を形成することを特徴とする、請求項5に記載のESD保護デバイスの製造方法。 - 前記第1の工程において、前記補助電極は電子写真法により形成されることを特徴とする、請求項5又は6に記載のESD保護デバイスの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010510573A JPWO2010061519A1 (ja) | 2008-11-26 | 2009-10-19 | Esd保護デバイス及びその製造方法 |
CN2009801479985A CN102224648B (zh) | 2008-11-26 | 2009-10-19 | Esd保护器件及其制造方法 |
US13/115,221 US8455918B2 (en) | 2008-11-26 | 2011-05-25 | ESD protection device and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008301643 | 2008-11-26 | ||
JP2008-301643 | 2008-11-26 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/115,221 Continuation US8455918B2 (en) | 2008-11-26 | 2011-05-25 | ESD protection device and method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010061519A1 true WO2010061519A1 (ja) | 2010-06-03 |
Family
ID=42225411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/005463 WO2010061519A1 (ja) | 2008-11-26 | 2009-10-19 | Esd保護デバイス及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8455918B2 (ja) |
JP (1) | JPWO2010061519A1 (ja) |
CN (1) | CN102224648B (ja) |
WO (1) | WO2010061519A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043576A1 (ja) * | 2010-09-30 | 2012-04-05 | Tdk株式会社 | 静電気対策素子 |
WO2013011821A1 (ja) * | 2011-07-15 | 2013-01-24 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
JP2013114788A (ja) * | 2011-11-25 | 2013-06-10 | Panasonic Corp | 静電気対策部品の製造方法および静電気対策部品 |
WO2013088801A1 (ja) | 2011-12-12 | 2013-06-20 | Tdk株式会社 | 静電気対策素子 |
JP5221794B1 (ja) * | 2012-08-09 | 2013-06-26 | 立山科学工業株式会社 | 静電気保護素子とその製造方法 |
WO2013129270A1 (ja) * | 2012-02-29 | 2013-09-06 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
WO2014034435A1 (ja) * | 2012-08-26 | 2014-03-06 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
WO2014141988A1 (ja) * | 2013-03-15 | 2014-09-18 | Tdk株式会社 | 静電気対策素子 |
US20150155246A1 (en) * | 2012-08-13 | 2015-06-04 | Murata Manufacturing Co., Ltd. | Esd protection device |
KR20160076887A (ko) * | 2014-12-23 | 2016-07-01 | 삼성전기주식회사 | 정전기 방전 보호 소자 및 그 제조 방법 |
JP2017228523A (ja) * | 2016-06-24 | 2017-12-28 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 複合電子部品及びその製造方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5437769B2 (ja) * | 2009-10-16 | 2014-03-12 | 田淵電機株式会社 | サージ吸収素子 |
JP5557060B2 (ja) * | 2010-02-04 | 2014-07-23 | 株式会社村田製作所 | Esd保護装置の製造方法 |
US8885324B2 (en) | 2011-07-08 | 2014-11-11 | Kemet Electronics Corporation | Overvoltage protection component |
US9142353B2 (en) | 2011-07-08 | 2015-09-22 | Kemet Electronics Corporation | Discharge capacitor |
TWI517227B (zh) * | 2012-02-24 | 2016-01-11 | Amazing Microelectronic Corp | Planetary Discharge Microchannel Structure and Its Making Method |
KR101593078B1 (ko) | 2012-02-29 | 2016-03-22 | 가부시키가이샤 무라타 세이사쿠쇼 | Esd 보호 디바이스 및 그 제조방법 |
US9177931B2 (en) | 2014-02-27 | 2015-11-03 | Globalfoundries U.S. 2 Llc | Reducing thermal energy transfer during chip-join processing |
WO2015190404A1 (ja) * | 2014-06-13 | 2015-12-17 | 株式会社村田製作所 | 静電気放電保護デバイスおよびその製造方法 |
WO2015198833A1 (ja) * | 2014-06-24 | 2015-12-30 | 株式会社村田製作所 | 静電気放電保護デバイスおよびその製造方法 |
KR101585604B1 (ko) * | 2015-07-01 | 2016-01-14 | 주식회사 아모텍 | 감전보호용 컨택터 및 이를 구비한 휴대용 전자장치 |
WO2017002476A1 (ja) * | 2015-07-01 | 2017-01-05 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
DE102015116278A1 (de) * | 2015-09-25 | 2017-03-30 | Epcos Ag | Überspannungsschutzbauelement und Verfahren zur Herstellung eines Überspannungsschutzbauelements |
US10134720B1 (en) | 2016-02-16 | 2018-11-20 | Darryl G. Walker | Package including a plurality of stacked semiconductor devices having area efficient ESD protection |
KR102163418B1 (ko) * | 2018-11-02 | 2020-10-08 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
DE102019125819A1 (de) * | 2019-04-17 | 2020-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleiterverarbeitungsvorrichtung und verfahren unter einsatz einer elektrostatischen entladungs-(esd)- verhinderungsschicht |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10208845A (ja) * | 1997-01-22 | 1998-08-07 | Matsushita Electric Ind Co Ltd | サージ吸収器 |
JPH11354926A (ja) * | 1998-06-12 | 1999-12-24 | Murata Mfg Co Ltd | セラミック電子部品の製造方法 |
JP2000277229A (ja) * | 1999-03-23 | 2000-10-06 | Tokin Corp | 表面実装型サージ吸収素子の製造方法 |
JP2001345161A (ja) * | 2000-05-31 | 2001-12-14 | Mitsubishi Materials Corp | チップ型サージアブソーバおよびその製造方法 |
JP2005276666A (ja) * | 2004-03-25 | 2005-10-06 | Mitsubishi Materials Corp | サージアブソーバ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0368389U (ja) * | 1989-11-07 | 1991-07-04 | ||
JPH0697626B2 (ja) * | 1989-12-25 | 1994-11-30 | 岡谷電機産業株式会社 | 放電型サージ吸収素子 |
JPH071750Y2 (ja) * | 1990-03-30 | 1995-01-18 | 岡谷電機産業株式会社 | 放電型サージ吸収素子 |
JP2001043954A (ja) | 1999-07-30 | 2001-02-16 | Tokin Corp | サージ吸収素子及びその製造方法 |
JP2002329872A (ja) | 2001-04-25 | 2002-11-15 | Kaho Kagi Kofun Yugenkoshi | 過渡過電圧保護素子の材料 |
JP2003059616A (ja) * | 2001-08-21 | 2003-02-28 | Sakurai New Research:Kk | サージ吸収素子 |
JP2004014466A (ja) | 2002-06-11 | 2004-01-15 | Mitsubishi Materials Corp | チップ型サージアブソーバ及びその製造方法 |
CN101542856B (zh) | 2007-05-28 | 2012-05-30 | 株式会社村田制作所 | 静电放电保护装置 |
EP2242154B1 (en) * | 2008-02-05 | 2017-12-06 | Murata Manufacturing Co. Ltd. | Esd protection device |
-
2009
- 2009-10-19 JP JP2010510573A patent/JPWO2010061519A1/ja active Pending
- 2009-10-19 WO PCT/JP2009/005463 patent/WO2010061519A1/ja active Application Filing
- 2009-10-19 CN CN2009801479985A patent/CN102224648B/zh active Active
-
2011
- 2011-05-25 US US13/115,221 patent/US8455918B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10208845A (ja) * | 1997-01-22 | 1998-08-07 | Matsushita Electric Ind Co Ltd | サージ吸収器 |
JPH11354926A (ja) * | 1998-06-12 | 1999-12-24 | Murata Mfg Co Ltd | セラミック電子部品の製造方法 |
JP2000277229A (ja) * | 1999-03-23 | 2000-10-06 | Tokin Corp | 表面実装型サージ吸収素子の製造方法 |
JP2001345161A (ja) * | 2000-05-31 | 2001-12-14 | Mitsubishi Materials Corp | チップ型サージアブソーバおよびその製造方法 |
JP2005276666A (ja) * | 2004-03-25 | 2005-10-06 | Mitsubishi Materials Corp | サージアブソーバ |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8934205B2 (en) | 2010-09-30 | 2015-01-13 | Tdk Corporation | ESD protection device |
WO2012043576A1 (ja) * | 2010-09-30 | 2012-04-05 | Tdk株式会社 | 静電気対策素子 |
CN103140997A (zh) * | 2010-09-30 | 2013-06-05 | Tdk株式会社 | 抗静电元件 |
KR101403163B1 (ko) * | 2010-09-30 | 2014-06-03 | 티디케이가부시기가이샤 | 정전기 대책 소자 |
TWI427880B (zh) * | 2010-09-30 | 2014-02-21 | Tdk Corp | Electrostatic countermeasure components |
JP5382235B2 (ja) * | 2010-09-30 | 2014-01-08 | Tdk株式会社 | 静電気対策素子 |
CN103650267A (zh) * | 2011-07-15 | 2014-03-19 | 株式会社村田制作所 | Esd保护装置及其制造方法 |
JP5637314B2 (ja) * | 2011-07-15 | 2014-12-10 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
US9386673B2 (en) | 2011-07-15 | 2016-07-05 | Murata Manufacturing Co., Ltd. | ESD protection device and method for producing same |
JPWO2013011821A1 (ja) * | 2011-07-15 | 2015-02-23 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
WO2013011821A1 (ja) * | 2011-07-15 | 2013-01-24 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
KR101555047B1 (ko) * | 2011-07-15 | 2015-09-23 | 가부시키가이샤 무라타 세이사쿠쇼 | Esd 보호 디바이스 및 그 제조방법 |
JP2013114788A (ja) * | 2011-11-25 | 2013-06-10 | Panasonic Corp | 静電気対策部品の製造方法および静電気対策部品 |
WO2013088801A1 (ja) | 2011-12-12 | 2013-06-20 | Tdk株式会社 | 静電気対策素子 |
KR20140074395A (ko) | 2011-12-12 | 2014-06-17 | 티디케이가부시기가이샤 | 정전기 대책 소자 |
US9380687B2 (en) | 2011-12-12 | 2016-06-28 | Tdk Corporation | ESD protection device |
KR101596909B1 (ko) | 2012-02-29 | 2016-02-23 | 가부시키가이샤 무라타 세이사쿠쇼 | Esd 보호 디바이스 및 그 제조방법 |
US9373954B2 (en) | 2012-02-29 | 2016-06-21 | Murata Manufacturing Co., Ltd. | ESD protection device and method for producing the same |
KR20140114056A (ko) * | 2012-02-29 | 2014-09-25 | 가부시키가이샤 무라타 세이사쿠쇼 | Esd 보호 디바이스 및 그 제조방법 |
WO2013129270A1 (ja) * | 2012-02-29 | 2013-09-06 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
JPWO2013129270A1 (ja) * | 2012-02-29 | 2015-07-30 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
JP5221794B1 (ja) * | 2012-08-09 | 2013-06-26 | 立山科学工業株式会社 | 静電気保護素子とその製造方法 |
US20150155246A1 (en) * | 2012-08-13 | 2015-06-04 | Murata Manufacturing Co., Ltd. | Esd protection device |
JP5733480B2 (ja) * | 2012-08-26 | 2015-06-10 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
WO2014034435A1 (ja) * | 2012-08-26 | 2014-03-06 | 株式会社村田製作所 | Esd保護デバイスおよびその製造方法 |
US9466970B2 (en) | 2012-08-26 | 2016-10-11 | Murata Manufacturing Co., Ltd. | ESD protection device and method for manufacturing the same |
WO2014141988A1 (ja) * | 2013-03-15 | 2014-09-18 | Tdk株式会社 | 静電気対策素子 |
JP5954490B2 (ja) * | 2013-03-15 | 2016-07-20 | Tdk株式会社 | 静電気対策素子 |
KR102048103B1 (ko) * | 2014-12-23 | 2019-11-22 | 삼성전기주식회사 | 정전기 방전 보호 소자 및 그 제조 방법 |
KR20160076887A (ko) * | 2014-12-23 | 2016-07-01 | 삼성전기주식회사 | 정전기 방전 보호 소자 및 그 제조 방법 |
JP2017228523A (ja) * | 2016-06-24 | 2017-12-28 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 複合電子部品及びその製造方法 |
US10477660B2 (en) | 2016-06-24 | 2019-11-12 | Samsung Electro-Mechanics Co., Ltd. | Complex electronic component and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
CN102224648B (zh) | 2013-09-18 |
CN102224648A (zh) | 2011-10-19 |
JPWO2010061519A1 (ja) | 2012-04-19 |
US20110222203A1 (en) | 2011-09-15 |
US8455918B2 (en) | 2013-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010061519A1 (ja) | Esd保護デバイス及びその製造方法 | |
WO2010061550A1 (ja) | Esd保護デバイス及びその製造方法 | |
KR101072673B1 (ko) | Esd 보호 디바이스 | |
KR101254212B1 (ko) | Esd 보호 디바이스 | |
KR101392455B1 (ko) | Esd 보호 디바이스 및 그 제조 방법 | |
JP5262624B2 (ja) | Esd保護デバイス及びその製造方法 | |
US9590417B2 (en) | ESD protective device | |
WO2011145598A1 (ja) | Esd保護デバイス | |
US8711537B2 (en) | ESD protection device and method for producing the same | |
US20110216456A1 (en) | Esd protection device | |
JP4893371B2 (ja) | バリスタ素子 | |
USRE47147E1 (en) | ESD protection device and method for producing the same | |
WO2011065043A1 (ja) | 静電気保護用ペースト、静電気保護部品及びその製造方法 | |
JP5561370B2 (ja) | Esd保護デバイスおよびその製造方法 | |
WO2014188792A1 (ja) | Esd保護装置 | |
JP2009117735A (ja) | 静電気対策部品およびその製造方法 | |
JPWO2015190404A1 (ja) | 静電気放電保護デバイスおよびその製造方法 | |
WO2013038892A1 (ja) | Esd保護デバイスおよびその製造方法 | |
US10057970B2 (en) | ESD protection device | |
JP2010027636A (ja) | 静電気対策部品 | |
JPWO2014168140A1 (ja) | Esd保護装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980147998.5 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010510573 Country of ref document: JP |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09828769 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09828769 Country of ref document: EP Kind code of ref document: A1 |