WO2010058524A1 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

Info

Publication number
WO2010058524A1
WO2010058524A1 PCT/JP2009/005606 JP2009005606W WO2010058524A1 WO 2010058524 A1 WO2010058524 A1 WO 2010058524A1 JP 2009005606 W JP2009005606 W JP 2009005606W WO 2010058524 A1 WO2010058524 A1 WO 2010058524A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
semiconductor substrate
semiconductor device
schottky
junction region
Prior art date
Application number
PCT/JP2009/005606
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
菅井昭彦
Original Assignee
昭和電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 昭和電工株式会社 filed Critical 昭和電工株式会社
Priority to CN200980145836.8A priority Critical patent/CN102217071B/zh
Priority to KR1020117012042A priority patent/KR101273108B1/ko
Priority to US13/129,890 priority patent/US8637872B2/en
Priority to EP09827305A priority patent/EP2360727A4/en
Publication of WO2010058524A1 publication Critical patent/WO2010058524A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0495—Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
PCT/JP2009/005606 2008-11-19 2009-10-23 半導体装置および半導体装置の製造方法 WO2010058524A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200980145836.8A CN102217071B (zh) 2008-11-19 2009-10-23 半导体装置和半导体装置的制造方法
KR1020117012042A KR101273108B1 (ko) 2008-11-19 2009-10-23 반도체 장치 및 반도체 장치의 제조 방법
US13/129,890 US8637872B2 (en) 2008-11-19 2009-10-23 Semiconductor device and method of manufacturing semiconductor device
EP09827305A EP2360727A4 (en) 2008-11-19 2009-10-23 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008295826A JP5047133B2 (ja) 2008-11-19 2008-11-19 半導体装置の製造方法
JP2008-295826 2008-11-19

Publications (1)

Publication Number Publication Date
WO2010058524A1 true WO2010058524A1 (ja) 2010-05-27

Family

ID=42197967

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/005606 WO2010058524A1 (ja) 2008-11-19 2009-10-23 半導体装置および半導体装置の製造方法

Country Status (6)

Country Link
US (1) US8637872B2 (zh)
EP (1) EP2360727A4 (zh)
JP (1) JP5047133B2 (zh)
KR (1) KR101273108B1 (zh)
CN (1) CN102217071B (zh)
WO (1) WO2010058524A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016185645A1 (ja) * 2015-05-21 2018-03-15 パナソニック株式会社 窒化物半導体装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102280465B (zh) * 2010-06-13 2013-05-29 北京大学 阻变随机访问存储器件及制造方法
JP6089235B2 (ja) * 2012-03-28 2017-03-08 国立研究開発法人産業技術総合研究所 炭化珪素半導体素子の製造方法
JP6296445B2 (ja) * 2014-02-10 2018-03-20 ローム株式会社 ショットキーバリアダイオード
DE102015101966B4 (de) * 2015-02-11 2021-07-08 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterbauelements mit Schottkykontakt und Halbleiterbauelement
EP3555925B1 (en) * 2016-12-15 2022-01-12 Griffith University Silicon carbide schottky diodes
CN113711365A (zh) * 2019-04-25 2021-11-26 京瓷株式会社 半导体装置以及半导体装置的制造方法
CN117059672B (zh) * 2023-10-11 2024-01-23 通威微电子有限公司 一种集成sbd的半导体器件及其制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112474A (ja) 1992-09-28 1994-04-22 Murata Mfg Co Ltd ショットキーバリア半導体装置
JPH0766433A (ja) * 1993-08-26 1995-03-10 Hitachi Ltd 半導体整流素子
JPH0897441A (ja) * 1994-09-26 1996-04-12 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
JPH08236791A (ja) 1995-02-23 1996-09-13 Murata Mfg Co Ltd ショットキーバリア半導体装置
JP2000058874A (ja) * 1998-08-12 2000-02-25 Rohm Co Ltd ショットキーバリア半導体装置およびその製法
JP2000252478A (ja) 1999-02-26 2000-09-14 Hitachi Ltd ショットキーバリアダイオード
US20080277668A1 (en) * 2007-05-10 2008-11-13 Denso Corporation SIS semiconductor having junction barrier schottky device
JP2008295826A (ja) 2007-05-31 2008-12-11 Barudan Co Ltd ロータリー式多針ミシン
JP2009224603A (ja) * 2008-03-17 2009-10-01 Toyota Central R&D Labs Inc ダイオードの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789311A (en) * 1953-02-19 1957-04-23 Danielson Mfg Company Manufacture of speedometer gear units
JPS57124438A (en) 1981-01-26 1982-08-03 Rikagaku Kenkyusho Ion beam etching for silicon carbide
EP0426877B1 (en) * 1989-05-31 1995-08-23 Japan Energy Corporation Method of producing compound semiconductor devices
US6307244B1 (en) * 1998-08-12 2001-10-23 Rohm Co., Ltd. Schottky barrier semiconductor device
US6844251B2 (en) * 2001-03-23 2005-01-18 Krishna Shenai Method of forming a semiconductor device with a junction termination layer
JP3610951B2 (ja) * 2002-01-16 2005-01-19 ソニー株式会社 半導体装置及び半導体装置の製造方法
TWI241028B (en) 2002-03-08 2005-10-01 Sanken Electric Co Ltd Semiconductor device and its manufacturing method
JP4585772B2 (ja) * 2004-02-06 2010-11-24 関西電力株式会社 高耐圧ワイドギャップ半導体装置及び電力装置
JP2005340417A (ja) * 2004-05-26 2005-12-08 Mitsubishi Electric Corp ヘテロ接合電界効果型半導体装置
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US7728403B2 (en) * 2006-05-31 2010-06-01 Cree Sweden Ab Semiconductor device
US7745273B2 (en) * 2007-07-30 2010-06-29 Infineon Technologies Austria Ag Semiconductor device and method for forming same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112474A (ja) 1992-09-28 1994-04-22 Murata Mfg Co Ltd ショットキーバリア半導体装置
JPH0766433A (ja) * 1993-08-26 1995-03-10 Hitachi Ltd 半導体整流素子
JPH0897441A (ja) * 1994-09-26 1996-04-12 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
JPH08236791A (ja) 1995-02-23 1996-09-13 Murata Mfg Co Ltd ショットキーバリア半導体装置
JP2000058874A (ja) * 1998-08-12 2000-02-25 Rohm Co Ltd ショットキーバリア半導体装置およびその製法
JP2000252478A (ja) 1999-02-26 2000-09-14 Hitachi Ltd ショットキーバリアダイオード
US20080277668A1 (en) * 2007-05-10 2008-11-13 Denso Corporation SIS semiconductor having junction barrier schottky device
JP2008295826A (ja) 2007-05-31 2008-12-11 Barudan Co Ltd ロータリー式多針ミシン
JP2009224603A (ja) * 2008-03-17 2009-10-01 Toyota Central R&D Labs Inc ダイオードの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2360727A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016185645A1 (ja) * 2015-05-21 2018-03-15 パナソニック株式会社 窒化物半導体装置

Also Published As

Publication number Publication date
CN102217071A (zh) 2011-10-12
KR101273108B1 (ko) 2013-06-13
KR20110086714A (ko) 2011-07-29
JP5047133B2 (ja) 2012-10-10
CN102217071B (zh) 2015-09-30
EP2360727A1 (en) 2011-08-24
US20110220918A1 (en) 2011-09-15
JP2010123741A (ja) 2010-06-03
EP2360727A4 (en) 2012-11-21
US8637872B2 (en) 2014-01-28

Similar Documents

Publication Publication Date Title
WO2010058524A1 (ja) 半導体装置および半導体装置の製造方法
US7816733B2 (en) SiC semiconductor having junction barrier schottky device
JP5862660B2 (ja) 半導体装置およびその製造方法
KR100733751B1 (ko) 반도체 디바이스 및 그 제조 방법
US8946726B2 (en) Grid-UMOSFET with electric field shielding of gate oxide
CN105990456B (zh) 半导体装置及其制造方法
JP6477106B2 (ja) 半導体装置
JP5810522B2 (ja) 異種材料接合型ダイオード及びその製造方法
JP3873798B2 (ja) 炭化けい素半導体素子およびその製造方法
US7915705B2 (en) SiC semiconductor device having outer periphery structure
JP4607266B2 (ja) 半絶縁ポリシリコン（ｓｉｐｏｓ）を用いた電力半導体装置及びその製造方法
JP5310291B2 (ja) 半導体装置およびその製造方法
JP2005229071A (ja) ショットキーバリアダイオード
TWI797493B (zh) 肖特基能障二極體
JP5982109B2 (ja) 炭化珪素半導体装置
CN217691179U (zh) 肖特基二极管及电子设备
JP2009224642A (ja) 炭化珪素半導体装置およびその製造方法
JP2009004566A (ja) 半導体装置および半導体装置の製造方法
KR101184378B1 (ko) 쇼트키 다이오드 및 그 제조방법
JP5090043B2 (ja) ダイオード
JP6256008B2 (ja) 半導体装置及び半導体装置の製造方法
US20240105859A1 (en) Schottky barrier diode
JP2012178494A (ja) 炭化珪素ジャンクションバリアショットキーダイオードおよびその製造方法
JP2008227114A (ja) 半導体装置およびその製造方法
CN116978957A (zh) 一种快恢复二极管及其制备方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980145836.8

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09827305

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009827305

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 13129890

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20117012042

Country of ref document: KR

Kind code of ref document: A