JPWO2016185645A1 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 167
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 161
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000004048 modification Effects 0.000 description 27
- 238000012986 modification Methods 0.000 description 27
- 230000015556 catabolic process Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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Abstract
Description
本発明者らは、「背景技術」の欄において記載した従来のダイオードに関して、以下の問題が生じることを見出した。
図2は、第1の実施形態に係る窒化物半導体装置の平面図である。図2は、後述する絶縁膜107および第1アノード電極108を省いた平面図である。図3は、第1の実施形態に係る窒化物半導体装置の断面図である。図3は、図2の窒化物半導体装置におけるIII−III断面図である。図3に示すように、第1の実施形態に係る窒化物半導体装置は、基板101と、第1窒化物半導体層102と、第2窒化物半導体層103と、リセス部104と、メサ部105と、注入分離部106と、絶縁膜107と、第1アノード電極108と、カソード電極110とを備える。
図5は、第1の実施形態の変形例1に係る窒化物半導体装置の平面図である。本実施形態では、第1アノード電極108の平面形状は、略四角形であってもよい。また、平面視における第2窒化物半導体層103の内周形状は、略四角形であってもよいし、略円形であってもよい。また、平面視における第2窒化物半導体層103の内周形状は、外周形状が略四角形であってもよい。ここで、四角形とは、正方形、長方形、ひし形等を含む。
図6は、第1の実施形態の変形例2に係る窒化物半導体装置の平面図である。本実施形態では、第1アノード電極108の平面形状は、略円形であってもよい。また、平面視における第2窒化物半導体層103の内周形状は、略正六角形であってもよいし、略円形であってもよい。また、平面視における第2窒化物半導体層103の外周形状は、略正六角形であってもよい。
図7は、第2の実施形態に係る窒化物半導体装置の平面図である。なお、図7は、絶縁膜107および第1アノード電極108を省いた平面図となっている。図8は、第2の実施形態に係る窒化物半導体装置の断面図である。図8は、図7の窒化物半導体装置におけるVIII−VIII断面図である。図8に示すように、第2の実施形態に係る窒化物半導体装置は、基板101と、第1窒化物半導体層102と、第2窒化物半導体層103と、リセス部104と、メサ部105と、注入分離部106と、絶縁膜107と、第1アノード電極108と、カソード電極110とを備える。
図9から図13は、それぞれ、本実施形態の平面形状の変形例を示した図である。
図14は、第3の実施形態に係る窒化物半導体装置の断面図である。図14に示すように、第3の実施形態に係る窒化物半導体装置は、基板101と、第1窒化物半導体層102と、第2窒化物半導体層103と、リセス部104と、メサ部105と、注入分離部106と、絶縁膜107と、第1アノード電極108と、カソード電極110と、量子井戸活性層115とを備える。本実施形態に係る窒化物半導体装置は、第1の実施形態に係る窒化物半導体装置と比較して、第1窒化物半導体層102と第2窒化物半導体層103との間に量子井戸活性層115を備える点が構成として異なる。以下、第3の実施形態に関して、第1の実施形態との相違点を中心に説明する。
図15は、第4の実施形態に係る窒化物半導体装置の断面図である。図15に示すように、第4の実施形態に係る窒化物半導体装置は、基板101と、第1窒化物半導体層102と、第2窒化物半導体層103と、リセス部104と、メサ部105と、注入分離部106と、絶縁膜107と、第1アノード電極108と、第2アノード電極109と、カソード電極110とを備える。本実施形態に係る窒化物半導体装置は、第1の実施形態に係る窒化物半導体装置と比較して、第2窒化物半導体層103の上に、第2アノード電極109を備える点が構成として異なる。以下、第4の実施形態に関して、第1の実施形態との相違点を中心に説明する。
なお、本開示に係る窒化物半導体装置は、第1〜第4の実施形態およびそれらの変形例に限定されるものではない。上記実施形態および変形例における任意の構成要素を組み合わせて実現される別の実施形態や、上記実施形態および変形例に対して本発明の趣旨を逸脱しない範囲で当業者が思いつく各種変形を施して得られる変形例や、上記実施形態および変形例に係る窒化物半導体装置を内蔵した各種機器も本発明に含まれる。
102 第1窒化物半導体層
103 第2窒化物半導体層
104 リセス部
105 メサ部
106 注入分離部
107 絶縁膜
108 第1アノード電極
109 第2アノード電極
110 カソード電極
112 凸部
113 空乏層
115 量子井戸活性層
130 第1主面
132 第2主面
Claims (13)
- 第1主面および第2主面を有する基板と、
前記第1主面上に配置され、凸部を有する第1導電型の第1窒化物半導体層と、
前記凸部の上に配置された第2導電型の第2窒化物半導体層と、
前記第1窒化物半導体層および前記第2窒化物半導体層の上方に配置された第1アノード電極と、
前記第2主面上に配置されたカソード電極とを備え、
前記凸部の側面が、前記第1主面に対して、第1の角度で傾斜している
窒化物半導体装置。 - 前記第2窒化物半導体層の側面の少なくとも一部が、前記第1主面に対して、第2の角度で傾斜している
請求項1に記載の窒化物半導体装置。 - 前記第2の角度は、30度から80度である
請求項2に記載の窒化物半導体装置。 - 前記第2窒化物半導体層の側面の全体が、前記第1主面に対して、第3の角度で傾斜している
請求項1に記載の窒化物半導体装置。 - 前記第3の角度は、30度から80度である
請求項4に記載の窒化物半導体装置。 - 前記第2窒化物半導体層には、リセス部が形成され、
前記リセス部は、前記第1窒化物半導体層に到達している
請求項1から5のいずれか1項に記載の窒化物半導体装置。 - 前記第2窒化物半導体層には、複数のリセス部が形成され、
前記複数のリセス部は、それぞれ、前記第1窒化物半導体層に到達している
請求項1から5のいずれか1項に記載の窒化物半導体装置。 - 前記複数のリセス部は、前記基板を平面視した場合に、行列状に配置されている
請求項7に記載の窒化物半導体装置。 - 前記第2窒化物半導体層は、前記基板を平面視した場合に、複数の島状構造を有し、且つ、前記複数の島状構造を囲う
請求項1から5のいずれか1項に記載の窒化物半導体装置。 - 前記第1窒化物半導体層と前記第2窒化物半導体層との間に配置され、且つ、前記第1窒化物半導体層のバンドギャップよりも量子準位が大きい量子井戸活性層を、さらに備える
請求項1から9のいずれか1項に記載の窒化物半導体装置。 - 前記量子井戸活性層の側面は、前記第1主面に対して、前記第1の角度で傾斜している
請求項1から10のいずれか1項に記載の窒化物半導体装置。 - 前記第2窒化物半導体層とオーミック接触する第2アノード電極を、さらに備え、
前記第2アノード電極は、前記第1アノード電極と電気的に接続されている
請求項1から11のいずれか1項に記載の窒化物半導体装置。 - 前記第1の角度は、30度から80度である
請求項1から12のいずれか1項に記載の窒化物半導体装置。
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WO2019142763A1 (ja) * | 2018-01-22 | 2019-07-25 | パナソニック株式会社 | 半導体受光素子、及び、半導体リレー |
JP6884235B2 (ja) * | 2018-02-09 | 2021-06-09 | 三菱電機株式会社 | 電力用半導体装置 |
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