JP2012079888A - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
- Publication number
- JP2012079888A JP2012079888A JP2010223173A JP2010223173A JP2012079888A JP 2012079888 A JP2012079888 A JP 2012079888A JP 2010223173 A JP2010223173 A JP 2010223173A JP 2010223173 A JP2010223173 A JP 2010223173A JP 2012079888 A JP2012079888 A JP 2012079888A
- Authority
- JP
- Japan
- Prior art keywords
- anode electrode
- nitride semiconductor
- semiconductor device
- recess structure
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 56
- 230000002093 peripheral effect Effects 0.000 claims abstract description 3
- 230000004888 barrier function Effects 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 56
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 13
- 229910052731 fluorine Inorganic materials 0.000 description 13
- 239000011737 fluorine Substances 0.000 description 13
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 240000004050 Pentaglottis sempervirens Species 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- -1 InAlN Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】窒化物半導体1,2上に形成されたカソード電極3、アノード電極4,5を有する窒化物半導体ダイオードにおいて、アノード電極4,5の周辺部に窒化物半導体を掘り込んだリセス構造6を有し、リセス構造内部には、アノード電極5が埋め込まれている。
【選択図】図1
Description
図1に示される本発明の第1の実施の形態に係る半導体装置は、GaN層からなるキャリア走行層1と、前記キャリア走行層1上に形成され、ノンドープもしくはn型のAlXGa1−XN(0<X≦1)からなる障壁層2とが積層された窒化物半導体上に、窒化物半導体とオーミック性接続されるカソード電極3と第1のアノード電極4と第2のアノード電極5が形成されている。第1のアノード電極4と第2のアノード電極5とは電気的に接続されている。第2のアノード電極5の下部の障壁層2の一部を選択的に除去してあり、リセス構造6を形成している。リセス構造6の内部には、第2のアノード電極5が埋め込まれている。第1のアノード電極4には、第2のアノード電極5を形成する金属の仕事関数よりも小さな仕事関数を有する金属により形成されている。第2のアノード電極は、窒化物半導体とショットキー性接続されているが、第1のアノード電極は、窒化物半導体とショットキー性接続とオーミック性接続とのどちらでもかまわない。
2・・・障壁層
3・・・カソード電極
4・・・第1のアノード電極
5・・・第2のアノード電極
6・・・リセス
7・・・第3の窒化物半導体層
8・・・素子分離領域
Claims (5)
- 窒化物半導体上に形成されたカソード電極と、アノード電極と、を有する窒化物半導体装置において、前記アノード電極の周辺部に前記窒化物半導体を掘り込んで形成されたリセス構造と、このリセス構造の内部に、前記アノード電極が埋め込み形成されていることを特徴とする窒化物半導体装置。
- 前記窒化物半導体がGaN層からなるキャリア走行層と、このキャリア走行層上に形成され、ノンドープもしくはn型のAlXGa1−XN(0<X≦1)からなる障壁層とが積層された窒化物半導体を含むことを特徴とする請求項1に記載の窒化物半導体装置。
- 前記リセス構造は、幅が4μm以下であることを特徴とする請求項1乃至請求項2に記載の窒化物半導体装置。
- 前記アノード電極が、リセス構造の内部に埋め込まれた第1のアノード電極とリセス構造の内部以外の窒化物半導体と少なくとも一部が接する第2のアノード電極からなり、この第2のアノード電極は、前記第1のアノード電極より、仕事関数の低い金属で形成されていることを特徴とする請求項1乃至請求項3に記載の窒化物半導体装置。
- 前記窒化物半導体において前記リセス構造の底部より上の障壁層が、リセス底部における障壁層に対して、ドーピング濃度が大きいか、もしくはAlXGa1−XN(0<X≦1)層のAl組成比が大きいことを特徴とする請求項1乃至請求項4に記載の窒化物半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010223173A JP5209018B2 (ja) | 2010-09-30 | 2010-09-30 | 窒化物半導体装置 |
US13/075,736 US20120080687A1 (en) | 2010-09-30 | 2011-03-30 | Nitride semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010223173A JP5209018B2 (ja) | 2010-09-30 | 2010-09-30 | 窒化物半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012079888A true JP2012079888A (ja) | 2012-04-19 |
JP5209018B2 JP5209018B2 (ja) | 2013-06-12 |
Family
ID=45889040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010223173A Active JP5209018B2 (ja) | 2010-09-30 | 2010-09-30 | 窒化物半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20120080687A1 (ja) |
JP (1) | JP5209018B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014212151A (ja) * | 2013-04-17 | 2014-11-13 | 三菱電機株式会社 | ショットキーバリアダイオードおよびそれを用いた電子装置 |
JPWO2016185645A1 (ja) * | 2015-05-21 | 2018-03-15 | パナソニック株式会社 | 窒化物半導体装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130328061A1 (en) * | 2012-06-07 | 2013-12-12 | Hrl Laboratories, Llc. | Normally-off gallium nitride transistor with insulating gate and method of making the same |
WO2014009863A1 (en) * | 2012-07-09 | 2014-01-16 | Visic Technologies Ltd. | Planar semiconductor heterojunction diode |
KR101927408B1 (ko) * | 2012-07-20 | 2019-03-07 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 및 그 제조방법 |
JP5777586B2 (ja) | 2012-09-20 | 2015-09-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
US9960247B2 (en) * | 2016-01-19 | 2018-05-01 | Ruigang Li | Schottky barrier structure for silicon carbide (SiC) power devices |
CN107104154A (zh) * | 2016-02-23 | 2017-08-29 | 北京大学 | 肖特基二极管及其制作方法 |
CN108091566A (zh) * | 2017-12-06 | 2018-05-29 | 中国科学院半导体研究所 | 一种凹槽阳极肖特基二极管的制备方法 |
US20230078017A1 (en) * | 2021-09-16 | 2023-03-16 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007180454A (ja) * | 2005-12-28 | 2007-07-12 | Toshiba Corp | 窒化物系半導体装置 |
JP2008108870A (ja) * | 2006-10-25 | 2008-05-08 | Sharp Corp | 整流器 |
JP2008147552A (ja) * | 2006-12-13 | 2008-06-26 | New Japan Radio Co Ltd | 窒化物半導体装置 |
JP2010114285A (ja) * | 2008-11-07 | 2010-05-20 | New Japan Radio Co Ltd | 半導体装置 |
JP2012043864A (ja) * | 2010-08-16 | 2012-03-01 | Hitachi Ltd | 半導体装置および半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768146B2 (en) * | 2001-11-27 | 2004-07-27 | The Furukawa Electric Co., Ltd. | III-V nitride semiconductor device, and protection element and power conversion apparatus using the same |
JP4398780B2 (ja) * | 2004-04-30 | 2010-01-13 | 古河電気工業株式会社 | GaN系半導体装置 |
JP2006100645A (ja) * | 2004-09-30 | 2006-04-13 | Furukawa Electric Co Ltd:The | GaN系半導体集積回路 |
US7898004B2 (en) * | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
-
2010
- 2010-09-30 JP JP2010223173A patent/JP5209018B2/ja active Active
-
2011
- 2011-03-30 US US13/075,736 patent/US20120080687A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007180454A (ja) * | 2005-12-28 | 2007-07-12 | Toshiba Corp | 窒化物系半導体装置 |
JP2008108870A (ja) * | 2006-10-25 | 2008-05-08 | Sharp Corp | 整流器 |
JP2008147552A (ja) * | 2006-12-13 | 2008-06-26 | New Japan Radio Co Ltd | 窒化物半導体装置 |
JP2010114285A (ja) * | 2008-11-07 | 2010-05-20 | New Japan Radio Co Ltd | 半導体装置 |
JP2012043864A (ja) * | 2010-08-16 | 2012-03-01 | Hitachi Ltd | 半導体装置および半導体装置の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014212151A (ja) * | 2013-04-17 | 2014-11-13 | 三菱電機株式会社 | ショットキーバリアダイオードおよびそれを用いた電子装置 |
JPWO2016185645A1 (ja) * | 2015-05-21 | 2018-03-15 | パナソニック株式会社 | 窒化物半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20120080687A1 (en) | 2012-04-05 |
JP5209018B2 (ja) | 2013-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5209018B2 (ja) | 窒化物半導体装置 | |
JP6174874B2 (ja) | 半導体装置 | |
JP4761319B2 (ja) | 窒化物半導体装置とそれを含む電力変換装置 | |
JP6167889B2 (ja) | 電界効果トランジスタとその製造方法 | |
JP6229172B2 (ja) | 半導体装置 | |
EP2660866A2 (en) | Semiconductor device and method of manufacturing the same | |
TWI424568B (zh) | Semiconductor device | |
US8809869B2 (en) | Diode with heterojunction of nitride semiconductor layers | |
JP2009231508A (ja) | 半導体装置 | |
US8816399B2 (en) | Semiconductor device | |
JP2011071206A (ja) | Iii族窒化物半導体からなる半導体装置およびその製造方法、電力変換装置 | |
US8981528B2 (en) | GaN-based Schottky diode having partially recessed anode | |
JP6119215B2 (ja) | 電界効果トランジスタ | |
JP2008016588A (ja) | GaN系半導体素子 | |
JP2009060049A (ja) | 窒化物系化合物半導体装置 | |
US8969917B2 (en) | Semiconductor device and method for manufacturing same | |
WO2014050740A1 (ja) | スイッチング素子 | |
JP6244557B2 (ja) | 窒化物半導体デバイス | |
JP2014187085A (ja) | 半導体装置 | |
JP5721782B2 (ja) | 半導体装置 | |
JP5793101B2 (ja) | 半導体装置 | |
JP2015198175A (ja) | 窒化物半導体装置 | |
JP2010056137A (ja) | 半導体装置 | |
JP2015056413A (ja) | 窒化物半導体装置 | |
JP2011108712A (ja) | 窒化物半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120106 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120806 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120821 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121022 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130129 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130220 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160301 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5209018 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160301 Year of fee payment: 3 |