WO2009054217A1 - 高純度イッテルビウム、高純度イッテルビウムからなるスパッタリングターゲット、高純度イッテルビウムを含有する薄膜及び高純度イッテルビウムの製造方法 - Google Patents

高純度イッテルビウム、高純度イッテルビウムからなるスパッタリングターゲット、高純度イッテルビウムを含有する薄膜及び高純度イッテルビウムの製造方法 Download PDF

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Publication number
WO2009054217A1
WO2009054217A1 PCT/JP2008/067149 JP2008067149W WO2009054217A1 WO 2009054217 A1 WO2009054217 A1 WO 2009054217A1 JP 2008067149 W JP2008067149 W JP 2008067149W WO 2009054217 A1 WO2009054217 A1 WO 2009054217A1
Authority
WO
WIPO (PCT)
Prior art keywords
ytterbium
purity
purity ytterbium
thin film
sputtering target
Prior art date
Application number
PCT/JP2008/067149
Other languages
English (en)
French (fr)
Inventor
Yuichiro Shindo
Kazuto Yagi
Original Assignee
Nippon Mining & Metals Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining & Metals Co., Ltd. filed Critical Nippon Mining & Metals Co., Ltd.
Priority to CN200880113007.7A priority Critical patent/CN101835914B/zh
Priority to US12/739,011 priority patent/US8668785B2/en
Priority to EP08841768.8A priority patent/EP2204461B1/en
Priority to JP2009538021A priority patent/JP5160554B2/ja
Publication of WO2009054217A1 publication Critical patent/WO2009054217A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/16—Dry methods smelting of sulfides or formation of mattes with volatilisation or condensation of the metal being produced
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/04—Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B59/00—Obtaining rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

 粗酸化イッテルビウムを真空中で、蒸気圧が低い金属からなる還元性金属により還元し、かつイッテルビウムを選択的に蒸留し、高純度のイッテルビウムを得ることを特徴とする高純度イッテルビウムの製造方法。蒸気圧が高く金属溶融状態での精製が難しいイッテルビウムを高純度化する方法及びそれによって得られた高純度イッテルビウム並びに高純度材料イッテルビウムからなるスパッタリングターゲット及び高純度材料イッテルビウムを含有するメタルゲート用薄膜を効率的かつ安定して提供できる技術を提供することを課題とする。　
PCT/JP2008/067149 2007-10-23 2008-09-24 高純度イッテルビウム、高純度イッテルビウムからなるスパッタリングターゲット、高純度イッテルビウムを含有する薄膜及び高純度イッテルビウムの製造方法 WO2009054217A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880113007.7A CN101835914B (zh) 2007-10-23 2008-09-24 高纯度镱、包含高纯度镱的溅射靶、含有高纯度镱的薄膜及高纯度镱的制造方法
US12/739,011 US8668785B2 (en) 2007-10-23 2008-09-24 High purity ytterbium, sputtering target made thereof, thin film containing the same, and method of producing the same
EP08841768.8A EP2204461B1 (en) 2007-10-23 2008-09-24 High-purity ytterbium, sputtering target made of high-purity ytterbium, thin film containing high-purity ytterbium, and method for producing high-purity ytterbium
JP2009538021A JP5160554B2 (ja) 2007-10-23 2008-09-24 高純度イッテルビウム、高純度イッテルビウムからなるスパッタリングターゲット、高純度イッテルビウムを含有する薄膜及び高純度イッテルビウムの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-274808 2007-10-23
JP2007274808 2007-10-23

Publications (1)

Publication Number Publication Date
WO2009054217A1 true WO2009054217A1 (ja) 2009-04-30

Family

ID=40579323

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067149 WO2009054217A1 (ja) 2007-10-23 2008-09-24 高純度イッテルビウム、高純度イッテルビウムからなるスパッタリングターゲット、高純度イッテルビウムを含有する薄膜及び高純度イッテルビウムの製造方法

Country Status (6)

Country Link
US (1) US8668785B2 (ja)
EP (1) EP2204461B1 (ja)
JP (1) JP5160554B2 (ja)
KR (1) KR101269796B1 (ja)
CN (2) CN104232946A (ja)
WO (1) WO2009054217A1 (ja)

Cited By (1)

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CN111424184A (zh) * 2020-04-17 2020-07-17 包头稀土研究院 真空冶炼炉及一次连续还原蒸馏制备高纯金属镱的方法

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AU2008253545B2 (en) 2007-05-21 2012-04-12 Orbite Aluminae Inc. Processes for extracting aluminum and iron from aluminous ores
WO2009099121A1 (ja) * 2008-02-08 2009-08-13 Nippon Mining & Metals Co., Ltd. イッテルビウム製スパッタリングターゲット及び同ターゲットの製造方法
JP5497913B2 (ja) 2010-11-19 2014-05-21 Ｊｘ日鉱日石金属株式会社 高純度ランタンの製造方法
CA2825301C (en) * 2011-01-21 2015-05-12 Jx Nippon Mining & Metals Corporation Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having high-purity lanthanum as main component
EP2686458A4 (en) 2011-03-18 2015-04-15 Orbite Aluminae Inc METHODS FOR RECOVERING RARE EARTH ELEMENTS FROM ALUMINUM-CONTAINING MATERIALS
EP3141621A1 (en) 2011-05-04 2017-03-15 Orbite Aluminae Inc. Processes for recovering rare earth elements from various ores
RU2013157943A (ru) 2011-06-03 2015-07-20 Орбит Элюминэ Инк. Способ получения гематита
CA2840720C (en) 2011-07-06 2018-02-13 Jx Nippon Mining & Metals Corporation High-purity yttrium, process of producing high-purity yttrium, high-purity yttrium sputtering target, metal gate film deposited with high-purity yttrium sputtering target, and semiconductor element and device equipped with the metal gate film
CA2848751C (en) 2011-09-16 2020-04-21 Orbite Aluminae Inc. Processes for preparing alumina and various other products
BR112014016732A8 (pt) 2012-01-10 2017-07-04 Orbite Aluminae Inc processos para tratar lama vermelha
WO2013142957A1 (en) 2012-03-29 2013-10-03 Orbite Aluminae Inc. Processes for treating fly ashes
MY175471A (en) 2012-07-12 2020-06-29 Orbite Tech Inc Processes for preparing titanium oxide and various other products
JP2015535886A (ja) 2012-09-26 2015-12-17 オーバイト アルミナ インコーポレイテッドＯｒｂｉｔｅ Ａｌｕｍｉｎａｅ Ｉｎｃ． 種々の材料のＨＣｌ浸出によるアルミナおよび塩化マグネシウムを調製するためのプロセス
CN105189357A (zh) 2012-11-14 2015-12-23 奥佰特氧化铝有限公司 纯化铝离子的方法
CN109439932B (zh) * 2018-12-29 2021-05-04 湖南稀土金属材料研究院 金属镱的制备方法
CN112442622A (zh) * 2019-08-31 2021-03-05 苏州东宸先瑞新材料科技有限公司 一种金属镱靶材的生产工艺
KR20230012451A (ko) * 2019-11-20 2023-01-26 샤인 테크놀로지스 엘엘씨 희토류 원소의 분리
CN111440947B (zh) * 2020-04-17 2022-02-15 包头稀土研究院 采用氧化镱原料还原蒸馏制备金属镱的方法
WO2024010869A1 (en) * 2022-07-06 2024-01-11 Shine Technologies, Llc Repeated distillation/sublimation of rare earth elements

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JPS619533A (ja) 1984-06-22 1986-01-17 Showa Denko Kk 希土類金属の製造方法
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JPS6311628A (ja) 1986-06-30 1988-01-19 Mitsubishi Chem Ind Ltd 希土類金属の製造法
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JPH01104727A (ja) * 1987-10-16 1989-04-21 Showa Denko Kk 金属還元装置
JPH01126222A (ja) * 1987-11-12 1989-05-18 Tosoh Corp 希土類元素の分離精製方法
JPH0790411A (ja) 1993-09-14 1995-04-04 Sumitomo Light Metal Ind Ltd 高純度希土類金属の製造方法
JPH0790410A (ja) 1993-09-14 1995-04-04 Sumitomo Light Metal Ind Ltd 低酸素希土類金属の製造方法
JPH0885833A (ja) 1994-09-16 1996-04-02 Shin Etsu Chem Co Ltd 希土類金属の精製方法
JP2005209782A (ja) * 2004-01-21 2005-08-04 Toshiba Corp 半導体装置

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Publication number Priority date Publication date Assignee Title
JPS619533A (ja) 1984-06-22 1986-01-17 Showa Denko Kk 希土類金属の製造方法
JPS6247438A (ja) * 1985-08-23 1987-03-02 Sumitomo Metal Mining Co Ltd 酸化サマリウム含有物からのサマリウムの回収法
JPS6311628A (ja) 1986-06-30 1988-01-19 Mitsubishi Chem Ind Ltd 希土類金属の製造法
JPS63282218A (ja) * 1987-05-15 1988-11-18 Nippon Mining Co Ltd 高純度希土類金属の製造方法
JPH01104727A (ja) * 1987-10-16 1989-04-21 Showa Denko Kk 金属還元装置
JPH01126222A (ja) * 1987-11-12 1989-05-18 Tosoh Corp 希土類元素の分離精製方法
JPH0790411A (ja) 1993-09-14 1995-04-04 Sumitomo Light Metal Ind Ltd 高純度希土類金属の製造方法
JPH0790410A (ja) 1993-09-14 1995-04-04 Sumitomo Light Metal Ind Ltd 低酸素希土類金属の製造方法
JPH0885833A (ja) 1994-09-16 1996-04-02 Shin Etsu Chem Co Ltd 希土類金属の精製方法
JP2005209782A (ja) * 2004-01-21 2005-08-04 Toshiba Corp 半導体装置

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Title
See also references of EP2204461A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111424184A (zh) * 2020-04-17 2020-07-17 包头稀土研究院 真空冶炼炉及一次连续还原蒸馏制备高纯金属镱的方法
CN111424184B (zh) * 2020-04-17 2022-04-22 包头稀土研究院 一次连续还原蒸馏制备高纯金属镱的方法

Also Published As

Publication number Publication date
CN101835914A (zh) 2010-09-15
CN104232946A (zh) 2014-12-24
KR101269796B1 (ko) 2013-05-30
CN101835914B (zh) 2015-03-18
KR20100059998A (ko) 2010-06-04
EP2204461A4 (en) 2013-01-09
US8668785B2 (en) 2014-03-11
EP2204461A1 (en) 2010-07-07
US20100260640A1 (en) 2010-10-14
JPWO2009054217A1 (ja) 2011-03-03
JP5160554B2 (ja) 2013-03-13
EP2204461B1 (en) 2017-09-06

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