WO2013025003A3 - 식각액의 식각 용량이 증대된 구리/몰리브데늄 합금막의 식각 방법 - Google Patents

식각액의 식각 용량이 증대된 구리/몰리브데늄 합금막의 식각 방법 Download PDF

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WO2013025003A3
WO2013025003A3 PCT/KR2012/006329 KR2012006329W WO2013025003A3 WO 2013025003 A3 WO2013025003 A3 WO 2013025003A3 KR 2012006329 W KR2012006329 W KR 2012006329W WO 2013025003 A3 WO2013025003 A3 WO 2013025003A3
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WIPO (PCT)
Prior art keywords
etching
etchant
alloy film
molybdenum alloy
capacity
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PCT/KR2012/006329
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English (en)
French (fr)
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WO2013025003A2 (ko
Inventor
신효섭
정진배
김세훈
이은경
Original Assignee
주식회사 이엔에프테크놀로지
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Priority to CN201280040139.8A priority Critical patent/CN103814432B/zh
Publication of WO2013025003A2 publication Critical patent/WO2013025003A2/ko
Publication of WO2013025003A3 publication Critical patent/WO2013025003A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 TFT-LCD 제조에 사용되는 구리/몰리브데늄 합금막용 식각액의 식각 용량(etching capacity)을 증가시키는 방법에 관한 것으로, 본 발명의 방법은 구리/몰리브데늄 합금막용 식각액으로 식각을 반복할 때 발생하는 식각 속도, 테이퍼 프로파일, 식각 직진성 등의 식각 특성의 저하를 회복시켜 식각액의 식각 용량을 증가시킬 수 있으므로, TFT-LCD 등의 제조 비용을 현저히 감소시킬 수 있다.
PCT/KR2012/006329 2011-08-18 2012-08-09 식각액의 식각 용량이 증대된 구리/몰리브데늄 합금막의 식각 방법 WO2013025003A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201280040139.8A CN103814432B (zh) 2011-08-18 2012-08-09 增大蚀刻液蚀刻用量的铜/钼合金膜的蚀刻方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0082235 2011-08-18
KR1020110082235A KR101243847B1 (ko) 2011-08-18 2011-08-18 식각액의 식각 용량이 증대된 구리/몰리브데늄 합금막의 식각 방법

Publications (2)

Publication Number Publication Date
WO2013025003A2 WO2013025003A2 (ko) 2013-02-21
WO2013025003A3 true WO2013025003A3 (ko) 2013-04-11

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Country Link
KR (1) KR101243847B1 (ko)
CN (1) CN103814432B (ko)
WO (1) WO2013025003A2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104280916A (zh) * 2013-07-03 2015-01-14 东友精细化工有限公司 制造液晶显示器用阵列基板的方法
CN106498398A (zh) * 2016-12-01 2017-03-15 深圳市华星光电技术有限公司 用于铜/钼膜层的金属蚀刻液及其蚀刻方法

Families Citing this family (10)

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KR102261638B1 (ko) 2013-11-15 2021-06-08 삼성디스플레이 주식회사 세정제 조성물 및 이를 이용한 금속배선 제조방법
KR102218669B1 (ko) * 2014-06-27 2021-02-22 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
WO2016037426A1 (zh) * 2014-09-09 2016-03-17 中国电器科学研究院有限公司 一种从底层电镀铜/镍材料中回收稀贵/惰性金属的方法及试剂
CN104498951B (zh) * 2014-12-11 2017-05-17 深圳新宙邦科技股份有限公司 一种双氧水系铜钼合金膜用蚀刻液
KR101669772B1 (ko) * 2015-11-19 2016-10-27 오씨아이 주식회사 구리 식각용 조성물
WO2017086758A1 (ko) * 2015-11-19 2017-05-26 오씨아이 주식회사 구리 식각용 조성물 및 과산화수소계 금속 식각용 조성물
CN110105956A (zh) * 2019-04-17 2019-08-09 杭州格林达电子材料股份有限公司 一种适用于光刻工艺铜制程的无氟酸性刻蚀液及配制方法
CN110230059B (zh) * 2019-07-01 2020-11-24 深圳市华星光电技术有限公司 显示面板的金属图案制作方法
CN113774382B (zh) * 2021-08-30 2024-01-16 漳州思美科新材料有限公司 一种CuNi-Al-Mo蚀刻液
CN115353886B (zh) * 2022-08-31 2023-08-25 湖北兴福电子材料股份有限公司 一种磷酸基蚀刻液及其配制方法

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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
KR20090014750A (ko) * 2007-08-07 2009-02-11 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조 방법
KR20090085215A (ko) * 2008-02-04 2009-08-07 동우 화인켐 주식회사 박막트랜지스터의 제조방법, 및 상기 방법에 이용되는식각액 조성물
KR20100035250A (ko) * 2008-09-26 2010-04-05 테크노세미켐 주식회사 액정표시장치의 구리 및 구리/몰리브데늄 또는 구리/몰리브데늄합금 전극용 식각조성물

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104280916A (zh) * 2013-07-03 2015-01-14 东友精细化工有限公司 制造液晶显示器用阵列基板的方法
CN106498398A (zh) * 2016-12-01 2017-03-15 深圳市华星光电技术有限公司 用于铜/钼膜层的金属蚀刻液及其蚀刻方法

Also Published As

Publication number Publication date
WO2013025003A2 (ko) 2013-02-21
KR20130019926A (ko) 2013-02-27
KR101243847B1 (ko) 2013-03-20
CN103814432A (zh) 2014-05-21
CN103814432B (zh) 2016-05-11

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