CN103814432B - 增大蚀刻液蚀刻用量的铜/钼合金膜的蚀刻方法 - Google Patents

增大蚀刻液蚀刻用量的铜/钼合金膜的蚀刻方法 Download PDF

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CN103814432B
CN103814432B CN201280040139.8A CN201280040139A CN103814432B CN 103814432 B CN103814432 B CN 103814432B CN 201280040139 A CN201280040139 A CN 201280040139A CN 103814432 B CN103814432 B CN 103814432B
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etching
copper
molybdenum alloy
alloy film
etching solution
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CN103814432A (zh
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申孝燮
丁镇培
金世训
李恩庆
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ENF Technology CO Ltd
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ENF Technology CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • ing And Chemical Polishing (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201280040139.8A 2011-08-18 2012-08-09 增大蚀刻液蚀刻用量的铜/钼合金膜的蚀刻方法 Active CN103814432B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020110082235A KR101243847B1 (ko) 2011-08-18 2011-08-18 식각액의 식각 용량이 증대된 구리/몰리브데늄 합금막의 식각 방법
KR10-2011-0082235 2011-08-18
PCT/KR2012/006329 WO2013025003A2 (ko) 2011-08-18 2012-08-09 식각액의 식각 용량이 증대된 구리/몰리브데늄 합금막의 식각 방법

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CN103814432A CN103814432A (zh) 2014-05-21
CN103814432B true CN103814432B (zh) 2016-05-11

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KR (1) KR101243847B1 (ko)
CN (1) CN103814432B (ko)
WO (1) WO2013025003A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110230059A (zh) * 2019-07-01 2019-09-13 深圳市华星光电技术有限公司 显示面板的金属图案制作方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104280916A (zh) * 2013-07-03 2015-01-14 东友精细化工有限公司 制造液晶显示器用阵列基板的方法
KR102261638B1 (ko) 2013-11-15 2021-06-08 삼성디스플레이 주식회사 세정제 조성물 및 이를 이용한 금속배선 제조방법
KR102218669B1 (ko) * 2014-06-27 2021-02-22 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
WO2016037426A1 (zh) * 2014-09-09 2016-03-17 中国电器科学研究院有限公司 一种从底层电镀铜/镍材料中回收稀贵/惰性金属的方法及试剂
CN104498951B (zh) * 2014-12-11 2017-05-17 深圳新宙邦科技股份有限公司 一种双氧水系铜钼合金膜用蚀刻液
JP6670934B2 (ja) * 2015-11-19 2020-03-25 オーシーアイ カンパニー リミテッドＯＣＩ Ｃｏｍｐａｎｙ Ｌｔｄ． 銅エッチング用組成物及び過酸化水素系金属エッチング用組成物
KR101669772B1 (ko) * 2015-11-19 2016-10-27 오씨아이 주식회사 구리 식각용 조성물
CN106498398A (zh) * 2016-12-01 2017-03-15 深圳市华星光电技术有限公司 用于铜/钼膜层的金属蚀刻液及其蚀刻方法
CN110105956A (zh) * 2019-04-17 2019-08-09 杭州格林达电子材料股份有限公司 一种适用于光刻工艺铜制程的无氟酸性刻蚀液及配制方法
CN113774382B (zh) * 2021-08-30 2024-01-16 漳州思美科新材料有限公司 一种CuNi-Al-Mo蚀刻液
CN115353886B (zh) * 2022-08-31 2023-08-25 湖北兴福电子材料股份有限公司 一种磷酸基蚀刻液及其配制方法

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KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
CN1819748A (zh) * 2005-01-20 2006-08-16 Mec株式会社 蚀刻液和补给液以及使用它们的导体图案的形成方法
KR20090014750A (ko) * 2007-08-07 2009-02-11 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조 방법
CN101419916A (zh) * 2007-10-24 2009-04-29 台湾薄膜电晶体液晶显示器产业协会 薄膜晶体管的制造方法
KR20090085215A (ko) * 2008-02-04 2009-08-07 동우 화인켐 주식회사 박막트랜지스터의 제조방법, 및 상기 방법에 이용되는식각액 조성물
CN101684557A (zh) * 2008-09-26 2010-03-31 韩国泰科诺赛美材料株式会社 液晶显示器系统中的铜、铜/钼或铜/钼合金电极蚀刻液体

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KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
CN1819748A (zh) * 2005-01-20 2006-08-16 Mec株式会社 蚀刻液和补给液以及使用它们的导体图案的形成方法
KR20090014750A (ko) * 2007-08-07 2009-02-11 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조 방법
CN101419916A (zh) * 2007-10-24 2009-04-29 台湾薄膜电晶体液晶显示器产业协会 薄膜晶体管的制造方法
KR20090085215A (ko) * 2008-02-04 2009-08-07 동우 화인켐 주식회사 박막트랜지스터의 제조방법, 및 상기 방법에 이용되는식각액 조성물
CN101684557A (zh) * 2008-09-26 2010-03-31 韩国泰科诺赛美材料株式会社 液晶显示器系统中的铜、铜/钼或铜/钼合金电极蚀刻液体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110230059A (zh) * 2019-07-01 2019-09-13 深圳市华星光电技术有限公司 显示面板的金属图案制作方法

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KR101243847B1 (ko) 2013-03-20
WO2013025003A3 (ko) 2013-04-11
CN103814432A (zh) 2014-05-21
KR20130019926A (ko) 2013-02-27
WO2013025003A2 (ko) 2013-02-21

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