CN107316836A - 蚀刻液组合物、显示装置用阵列基板及其制造方法 - Google Patents
蚀刻液组合物、显示装置用阵列基板及其制造方法 Download PDFInfo
- Publication number
- CN107316836A CN107316836A CN201710271534.1A CN201710271534A CN107316836A CN 107316836 A CN107316836 A CN 107316836A CN 201710271534 A CN201710271534 A CN 201710271534A CN 107316836 A CN107316836 A CN 107316836A
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- weight
- copper
- metal film
- etchant
- film
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- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000010949 copper Substances 0.000 claims abstract description 61
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000203 mixture Substances 0.000 claims abstract description 24
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims abstract description 22
- 150000003851 azoles Chemical class 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229920005862 polyol Polymers 0.000 claims abstract description 12
- 150000003077 polyols Chemical class 0.000 claims abstract description 12
- 239000004471 Glycine Substances 0.000 claims abstract description 11
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 95
- 238000005530 etching Methods 0.000 claims description 48
- 150000001875 compounds Chemical class 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 17
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 8
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 5
- -1 imidazole compound Chemical class 0.000 claims description 5
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 2
- 229910004039 HBF4 Inorganic materials 0.000 claims description 2
- 229910017971 NH4BF4 Inorganic materials 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 claims description 2
- 150000003217 pyrazoles Chemical class 0.000 claims description 2
- 150000003233 pyrroles Chemical class 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical group NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical compound C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 claims 1
- WUHLVXDDBHWHLQ-UHFFFAOYSA-N pentazole Chemical compound N=1N=NNN=1 WUHLVXDDBHWHLQ-UHFFFAOYSA-N 0.000 claims 1
- 150000002978 peroxides Chemical class 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 14
- 230000003628 erosive effect Effects 0.000 description 13
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 11
- 229910001431 copper ion Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- GICLSALZHXCILJ-UHFFFAOYSA-N ctk5a5089 Chemical compound NCC(O)=O.NCC(O)=O GICLSALZHXCILJ-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 3
- VYECFMCAAHMRNW-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O.NS(O)(=O)=O VYECFMCAAHMRNW-UHFFFAOYSA-N 0.000 description 3
- 125000003831 tetrazolyl group Chemical group 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 150000003536 tetrazoles Chemical class 0.000 description 2
- 150000003852 triazoles Chemical class 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- UGBLVKBJELNFPS-UHFFFAOYSA-N 1,2-thiazole Chemical compound C=1C=NSC=1.C=1C=NSC=1 UGBLVKBJELNFPS-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- NRLVCJIUTHXRBL-UHFFFAOYSA-N N1N=NN=N1.N1N=NN=N1 Chemical compound N1N=NN=N1.N1N=NN=N1 NRLVCJIUTHXRBL-UHFFFAOYSA-N 0.000 description 1
- SGKYULFJJTZOEC-UHFFFAOYSA-N NCC(O)=O.NS(O)(=O)=O Chemical compound NCC(O)=O.NS(O)(=O)=O SGKYULFJJTZOEC-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003244 pro-oxidative effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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Abstract
本发明提供蚀刻液组合物、显示装置用阵列基板及其制造方法。更详细而言,涉及相对于组合物总重量,包含15~25重量%的过氧化氢、0.01~5重量%的含氟化合物、0.1~5重量%的唑系化合物、0.1~5重量%的甘氨酸、0.5~6重量%的氨基磺酸、0.001~5重量%的多元醇型表面活性剂和余量的水的铜系金属膜用蚀刻液组合物,使用该铜系金属膜用蚀刻液组合物的显示装置用阵列基板的制造方法及利用该制造方法制造的显示装置用阵列基板。
Description
技术领域
本发明涉及铜系金属膜用蚀刻液组合物、显示装置用阵列基板的制造方法及显示装置用阵列基板。
背景技术
半导体装置中在基板上形成金属配线的过程通常包括利用如下工序的步骤,利用溅射等的金属膜形成工序;利用光致抗蚀剂涂覆、曝光及显影的选择性区域中的光致抗蚀剂形成工序;及蚀刻工序,并且包括在个别单元工序前后的清洗工序等。这样的蚀刻工序是指,将光致抗蚀剂作为掩模,在选择性区域中留下金属膜的工序,通常使用利用等离子体等的干式蚀刻或利用蚀刻液组合物的湿式蚀刻。
以往,作为栅极和源电极/漏电极用配线材料,使用铝或其合金与其他金属层叠而成的金属膜。铝的价格低廉且电阻低,但是由于耐化学性差而导致后续工序中的突起(hillock)之类的不良,因而可能会引发与其他导电层的短路(short)现象。此外,会因与氧化物层的接触而形成绝缘层等引起液晶面板的运行不良。
考虑到这些方面,提出了铜膜和钼膜、铜膜和钼合金膜、铜合金膜和钼合金膜等铜系金属膜的多层膜作为栅极和源电极/漏电极用配线材料(韩国公开专利10-2007-0055259号)。
但是,为了蚀刻这样的铜系金属膜的多层膜,不得不使用用于蚀刻各金属膜的彼此不同的两种蚀刻液,如果不这样做,则会存在发生蚀刻轮廓不良,且产生残渣等问题。
此外,由于蚀刻经时所导致的锥角及侧蚀的变化量过大,因此存在基板的处理张数不足的缺点。
现有技术文献
专利文献
韩国公开专利2012-0055449
发明内容
所要解决的课题
本发明是为了解决上述以往技术问题而提出的,其目的在于,提供通过使蚀刻经时所导致的锥角及侧蚀的变化量最小化,从而大大提高基板的处理张数的铜系金属膜用蚀刻液组合物。
此外,本发明的目的在于,提供通过使用上述蚀刻液,从而大大提高生产效率的显示装置用阵列基板的制造方法。
此外,本发明的目的在于,提供利用上述方法制造而驱动性能及寿命特性优异的显示装置用阵列基板。
解决课题的方法
本发明提供一种显示装置用阵列基板的制造方法,其特征在于,包括:
a)在基板上形成栅极配线的步骤;
b)在包含上述栅极配线的基板上形成栅极绝缘层的步骤;
c)在上述栅极绝缘层上形成半导体层的步骤;
d)在上述半导体层上形成源电极和漏电极的步骤;及
e)形成与上述漏电极连接的像素电极的步骤,
上述a)步骤和d)步骤中的一个以上步骤包括:形成铜系金属膜,且用蚀刻液组合物蚀刻上述铜系金属膜的工序,
相对于组合物总重量,上述蚀刻液组合物包含15~25重量%的过氧化氢、0.01~5重量%的含氟化合物、0.1~5重量%的唑系化合物、0.1~5重量%的甘氨酸、0.5~6重量%的氨基磺酸(Sulfamic Acid)、0.001~5重量%的多元醇型表面活性剂和余量的水。
此外,本发明提供一种铜系金属膜用蚀刻液组合物,相对于组合物总重量,其包含15~25重量%的过氧化氢、0.01~5重量%的含氟化合物、0.1~5重量%的唑系化合物、0.1~5重量%的甘氨酸、0.5~6重量%的氨基磺酸(Sulfamic Acid)、0.001~5重量%的多元醇型表面活性剂和余量的水。
此外,本发明提供一种显示装置用阵列基板,其包含由本发明的铜系金属膜用蚀刻液组合物蚀刻而成的栅极配线、源电极和漏电极中的任一种以上。
发明效果
本发明的铜系金属膜用蚀刻液组合物通过使蚀刻经时所导致的锥角及侧蚀的变化量最小化,从而提供大大提高基板的处理张数的铜系金属膜用蚀刻液组合物。
此外,本发明的显示装置用阵列基板的制造方法通过使用上述铜系金属膜用蚀刻液组合物,从而提供大大提高生产效率的效果。
此外,使用如上所述蚀刻液而制造的本发明的显示装置用阵列基板具有驱动性能及寿命特性优异的特征。
附图说明
图1是表示本发明的试验例1的实施例和比较例的蚀刻液组合物的侧蚀变化量的图表。
具体实施方式
本发明涉及一种铜系金属膜用蚀刻液组合物,相对于组合物总重量,其包含15~25重量%的过氧化氢、0.01~5重量%的含氟化合物、0.1~5重量%的唑系化合物、0.1~5重量%的甘氨酸、0.5~6重量%的氨基磺酸(Sulfamic Acid)、0.001~5重量%的多元醇型表面活性剂和余量的水。
上述铜系金属膜在膜的构成成分中包含铜(Cu),是包含单层膜和双层膜以上的多层膜的概念。更详细而言,上述铜系金属膜是包含如下膜的概念:铜或铜合金(Cu alloy)的单层膜;或者包含选自上述铜膜和铜合金膜中的一层以上的膜、以及选自钼膜、钼合金膜、钛膜和钛合金膜中的一层以上的膜的多层膜。其中,所谓合金膜也包含氮化膜或氧化膜。
关于上述单层膜,作为铜系金属膜,可以举出铜单层膜、或者以铜为主成分且包含如下金属的铜合金膜等,所述金属为选自铝(Al)、镁(Mg)、钙(Ca)、钛(Ti)、银(Ag)、铬(Cr)、锰(Mn)、铁(Fe)、锆(Zr)、铌(Nb)、钼(Mo)、钯(Pd)、铪(Hf)、钽(Ta)和钨(W)等中的一种以上。其中,本发明的蚀刻液组合物尤其优选可以用于铜单层膜、铜和钼的合金膜。
此外,作为多层膜的例子,可以举出铜/钼膜、铜/钼合金膜、铜合金/钼膜、铜合金/钼合金膜等双层膜,或铜/钼/铜膜三层膜。特别是,本发明的蚀刻液组合物优选可以用于上述例示的多层膜。
此外,上述钼合金膜是指,例如由选自钛(Ti)、钽(Ta)、铬(Cr)、镍(Ni)、钕(Nd)和铟(In)中的一种以上金属和钼的合金形成的层。
本发明的蚀刻液组合物尤其优选可以用于厚度为以上的厚膜的包含铜或铜合金膜的铜系金属膜的蚀刻。
上述厚度为以上的厚膜与薄膜相比,每一张GLS在蚀刻液中溶出的铜离子的量多,因此为了提高处理张数,需要抑制因铜离子而发生的过氧化氢的分解反应且确保稳定性,在该方面上与薄膜有明显区别。
在以往的铜系金属膜蚀刻液的情况下,随着溶于蚀刻液相中的铜离子的浓度增加,初期所期望的侧蚀及锥角会发生变形而使工序上可以使用的处理张数受到限制。
以下,对构成本发明的蚀刻液组合物的各成分进行说明。
(A)过氧化氢
本发明的蚀刻液组合物中所包含的过氧化氢(H2O2)是用作主氧化剂的成分,对铜系金属膜的蚀刻速度产生影响(对铜系金属膜中所包含的合金膜的蚀刻速度也产生影响)。
上述过氧化氢的特征在于,相对于组合物总重量,含量为15~25重量%,更优选为18~23重量%。
在上述过氧化氢的含量低于15重量%的情况下,可能会导致对于铜系金属膜的单层膜或多层膜的蚀刻能力降低,蚀刻速度变慢。另一方面,在超过25重量%的情况下,由铜离子增加引起的发热稳定性可能会大大降低,蚀刻速度整体变快而可能难以控制工序。
(B)含氟化合物
本发明的蚀刻液组合物中所包含的含氟化合物是指在水中解离而能够释放F离子的化合物。上述含氟化合物是对钼合金膜的蚀刻速度起到影响的助氧化剂,调节钼合金膜的蚀刻速度。
上述含氟化合物只要是本领域中所使用的含氟化合物就没有特别限制。但是,优选选自由HF、NaF、NH4F、NH4BF4、NH4FHF、KF、KHF2、AlF3和HBF4组成的组,更优选为NH4F2。
相对于组合物总重量,上述含氟化合物的含量为0.01~5.0重量%,优选为0.1~3.0重量%。如果含量低于上述范围,则钼合金膜的蚀刻速度变慢,如果含量超过上述范围,则钼合金膜的蚀刻性能提高,但是由于蚀刻速度整体变快,因此会明显出现底切(Undercut)现象或下部层(n+a-Si:H,a-Si:G)的蚀刻损伤(Damage)。
(C)唑系化合物
本发明的蚀刻液组合物中所包含的C)唑系化合物发挥调节铜系金属膜的蚀刻速度,减小图案的CD损失(CD Loss)而提高工序上的余量的作用。
作为上述唑系化合物,可以举出比如吡咯(pyrrole)系化合物、吡唑(pyrazol)系化合物、咪唑(imidazole)系化合物、三唑(triazole)系化合物、四唑(tetrazole)系化合物、五唑(pentazole)系化合物、唑(oxazole)系化合物、异唑(isoxazole)系化合物、噻唑(thiazole)系化合物、异噻唑(isothiazole)系化合物等,它们可以单独使用一种或将两种以上一起使用。其中,优选为四唑(tetrazole)系化合物,最优选为5-甲基四唑和5-氨基四唑。
就上述唑系化合物而言,由于每种化合物的蚀刻速度调节能力以及随处理张数变化的蚀刻轮廓(Etch Profile)变化的减小能力不同,因此可以通过算出符合工序条件的配合比而使用。
相对于组合物总重量,上述唑系化合物的含量可以为0.1~5.0重量%,优选可以为0.5~1.5重量%。如果含量低于上述范围,则蚀刻速度变快而可能产生过多CD损失,在含量超过上述范围的情况下,铜系金属膜的蚀刻速度会过慢而金属氧化物膜的蚀刻速度相对变快,因而可能发生底切。
(D)甘氨酸(Glycine)
本发明的蚀刻液组合物中所包含的甘氨酸(Glycine)阻止在保管蚀刻液组合物时可能发生的过氧化氢水的自分解反应,在蚀刻多张基板时防止蚀刻特性发生变化。一般而言,在使用过氧化氢水的蚀刻液组合物的情况下,保管时会因过氧化氢水发生自分解反应而使保管时间变短,还带有容器可能发生爆炸的危险要素。
然而,在包含上述甘氨酸(Glycine)的情况下,过氧化氢水的分解速度降低近10倍,有利于确保保管时间和稳定性。尤其在铜层的情况下,当蚀刻液组合物中残存大量铜离子时,很可能会发生形成钝化(passivation)膜而氧化变黑后无法进一步蚀刻的情况,但在添加该化合物的情况下,能够阻止这样的现象。
上述甘氨酸(Glycine)的含量为0.1~5.0重量%的范围,特别优选为0.5~3.0重量%的范围。
在上述甘氨酸(Glycine)的含量低于上述范围的情况下,在蚀刻大量基板(约500张)后,会形成钝化膜而难以获得充分的工序余量,在超过上述范围的情况下,钼或钼合金的蚀刻速度会变慢,因而在铜钼膜或铜钼合金膜的情况下可能发生钼或钼合金膜的残渣问题。
E)氨基磺酸
本发明的蚀刻液组合物中所包含的氨基磺酸是调节pH而使蚀刻速度增加,且降低蚀刻液的过氧化氢分解反应的成分。此外,在处理张数增加时使锥角稳定,从而使初期所期望的蚀刻形状长时间得到维持。
相对于组合物总重量,上述氨基磺酸的含量为0.5~6.0重量%的范围,特别优选为2.0~5.0重量%的范围。如果氨基磺酸的含量低于上述范围,则蚀刻速度非常低而可能使蚀刻轮廓不良,蚀刻液内铜离子的溶解度显著减小,在含量超过上述范围的情况下,蚀刻速度会变得过快而发生金属受到损伤的问题。
(F)多元醇型表面活性剂
本发明的蚀刻液组合物中所包含的多元醇型表面活性剂发挥减小表面张力,使蚀刻均匀性增加的作用。此外,上述多元醇型表面活性剂通过包围蚀刻铜膜后在蚀刻液中溶出的铜离子,从而抑制铜离子的活度,抑制过氧化氢的分解。如果这样降低铜离子的活度,则在使用蚀刻液期间能够稳定地进行工序。
作为上述多元醇型表面活性剂,可以举出甘油(glycerol)、三乙二醇(triethylene glycol)、聚乙二醇(polyethylene glycol)等。其中,尤其优选可以使用三乙二醇(triethylene glycol)。
上述多元醇型表面活性剂的含量为0.001~5.0重量%的范围,特别优选为0.1~3.0重量%的范围。在上述多元醇型表面活性剂的含量低于上述范围的情况下,可能会发生蚀刻均匀性降低,过氧化氢的分解加速化的问题,在含量超过上述范围的情况下,会引起发生大量泡沫的问题。
(G)水
本发明的蚀刻液组合物中所包含的水没有特别限制,但优选使用用于半导体工序的去离子水,更优选使用表现水中离子去除程度的电阻率值为18MΩ·cm以上的去离子水。
上述水以余量包含以使组合物总重量成为100重量%。
本发明的铜系金属膜用蚀刻液组合物除了上述提及的成分以外可以进一步包含蚀刻调节剂、多价螯合剂、防腐蚀剂、pH调节剂等本领域中通常使用的添加剂。
本发明的铜系金属膜用蚀刻液组合物中所包含的各构成成分优选具有用于半导体工序的纯度,且各构成成分能够通过通常公知的方法来制造。
此外,本发明提供显示装置用阵列基板的制造方法,其特征在于,包括:
a)在基板上形成栅极配线的步骤;
b)在包含上述栅极配线的基板上形成栅极绝缘层的步骤;
c)在上述栅极绝缘层上形成半导体层的步骤;
d)在上述半导体层上形成源电极和漏电极的步骤;及
e)形成与上述漏电极连接的像素电极的步骤,
上述a)步骤和d)步骤中的一个以上的步骤包括:形成铜系金属膜,且用本发明的蚀刻液组合物蚀刻上述铜系金属膜的工序。
对于上述铜系金属膜,同样适用上述说明。
上述显示装置用阵列基板可以为薄膜晶体管(TFT)阵列基板。
此外,本发明提供显示装置用阵列基板,其包含由上述本发明的铜系金属膜用蚀刻液组合物蚀刻而成的栅极配线、源电极和漏电极中的任一种以上。
以下,利用实施例和比较例来更详细地说明本发明。然而,下述实施例和比较例仅用于例示本发明,本发明不受下述实施例的限制,可以进行多种多样的修改和变更。
实施例及比较例:蚀刻液组合物的制造
根据下述表1的成分和含量,分别制造实施例和比较例的蚀刻液组合物10kg。
[表1]
区分 | H2O2 | ABF | 5-MTZ | 甘氨酸 | 氨基磺酸 | TEG | IDA | 去离子水 |
实施例1 | 23 | 0.1 | 0.3 | 0.5 | 2.0 | 2 | - | 余量 |
实施例2 | 23 | 0.1 | 0.3 | 3.0 | 5.0 | 2 | - | 余量 |
比较例1 | 23 | 0.1 | 0.3 | 0.5 | 0 | 2 | - | 余量 |
比较例2 | 23 | 0.1 | 0.3 | 3.0 | 0 | 2 | - | 余量 |
比较例3 | 23 | 0.1 | 0.3 | 0 | 2.0 | 2 | - | 余量 |
比较例4 | 23 | 0.1 | 0.3 | 0 | 5.0 | 2 | - | 余量 |
比较例5 | 23 | 0.1 | 0.3 | 0 | 5.0 | 2 | 2.0 | 余量 |
(单位:重量%)
(注)
ABF:氟化氢铵(Ammoniumbifluoride);
5-MTZ:5-甲基四唑(5-methyltetrazole);
IDA:亚氨基二乙酸(Iminodiacetic aicd);
TEG:三乙二醇(Triethylene glycol)
试验例1:经时所导致的锥角及侧蚀的变化评价
分别使用实施例和比较例的蚀刻液组合物测定经时所导致的锥角及侧蚀的变化。
将100mm×100mm的玻璃(SiO2)基板上蒸镀有Cu/MoNb的薄膜基板用作试片,通过光刻(photolithography)工序在基板上形成具有预定图案的光致抗蚀剂后,用实施例和比较例的蚀刻液组合物实施蚀刻。
此时,通过每小时溶解Cu粉1,000ppm来进行蚀刻测试直至溶解8000ppm,利用SEM设备测定锥角和侧蚀,将该结果示于下述表2和表3及图1中。
[表2]
(单位:°)
由上述表2可以确认到,在使用本发明的蚀刻液组合物的情况下,即使铜离子的浓度提高到8,000ppm,锥角的变化也非常小。另一方面,在使用比较例的蚀刻液组合物的情况下,随着铜离子的浓度增加,锥角的变化非常大。上述不合格(spec out,超出范围)的意思是,相对于0ppm,锥角的变化超过15度。
[表3]
(单位:μm)
由上述表3可以确认到,在使用本发明的蚀刻液组合物的情况下,即使铜离子的浓度提高到8,000ppm,侧蚀的变化也非常小。另一方面,在使用比较例的蚀刻液组合物的情况下,随着铜离子的浓度增加,侧蚀的变化非常大。
上述不合格(spec out,超出范围)的意思是,侧蚀变化相对于0ppm超过0.05μm。
上述表2和表3的试验结果显示,在如实施例1~实施例2那样甘氨酸和氨基磺酸的含量处于本发明的含量范围内的情况下,锥角及侧蚀的性状不会随着处理张数的变化而大幅地变化。并且,这样的效果证明本发明的蚀刻液组合物的处理张数特性非常优异。
Claims (8)
1.一种显示装置用阵列基板的制造方法,其特征在于,包括:
a)在基板上形成栅极配线的步骤;
b)在包含所述栅极配线的基板上形成栅极绝缘层的步骤;
c)在所述栅极绝缘层上形成半导体层的步骤;
d)在所述半导体层上形成源电极和漏电极的步骤;及
e)形成与所述漏电极连接的像素电极的步骤,
所述a)步骤及d)步骤中的一个以上步骤包括:形成铜系金属膜,且用蚀刻液组合物蚀刻所述铜系金属膜的工序,
相对于组合物总重量,所述蚀刻液组合物包含15~25重量%的过氧化氢、0.01~5重量%的含氟化合物、0.1~5重量%的唑系化合物、0.1~5重量%的甘氨酸、0.5~6重量%的氨基磺酸、0.001~5重量%的多元醇型表面活性剂和余量的水。
2.根据权利要求1所述的显示装置用阵列基板的制造方法,其特征在于,所述显示装置用阵列基板为薄膜晶体管阵列基板。
3.一种铜系金属膜用蚀刻液组合物,相对于组合物总重量,包含15~25重量%的过氧化氢、0.01~5重量%的含氟化合物、0.1~5重量%的唑系化合物、0.1~5重量%的甘氨酸、0.5~6重量%的氨基磺酸、0.001~5重量%的多元醇型表面活性剂和余量的水。
4.根据权利要求3所述的铜系金属膜用蚀刻液组合物,其特征在于,所述含氟化合物为选自由HF、NaF、NH4F、NH4BF4、NH4FHF、KF、KHF2、AlF3和HBF4组成的组中的一种以上。
5.根据权利要求3所述的铜系金属膜用蚀刻液组合物,其特征在于,所述唑系化合物为选自由吡咯系化合物、吡唑系化合物、咪唑系化合物、三唑系化合物、四唑系化合物、五唑系化合物、唑系化合物、异唑系化合物、噻唑系化合物和异噻唑系化合物组成的组中的一种以上。
6.根据权利要求3所述的铜系金属膜用蚀刻液组合物,其特征在于,所述多元醇型表面活性剂为选自由甘油、三乙二醇和聚乙二醇组成的组中的一种以上。
7.根据权利要求3所述的铜系金属膜用蚀刻液组合物,其特征在于,所述铜系金属膜为选自由铜/钼膜、铜/钼合金膜、铜合金/钼膜、和铜合金/钼合金膜组成的组中的双层膜。
8.一种显示装置用阵列基板,其包含由权利要求3所述的铜系金属膜用蚀刻液组合物蚀刻而成的栅极配线、源电极和漏电极中的任一种以上。
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