WO2008132212A3 - Elektrisches bauelement - Google Patents
Elektrisches bauelement Download PDFInfo
- Publication number
- WO2008132212A3 WO2008132212A3 PCT/EP2008/055255 EP2008055255W WO2008132212A3 WO 2008132212 A3 WO2008132212 A3 WO 2008132212A3 EP 2008055255 W EP2008055255 W EP 2008055255W WO 2008132212 A3 WO2008132212 A3 WO 2008132212A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrical component
- component
- carrier substrate
- transmission line
- chip
- Prior art date
Links
- 230000005540 biological transmission Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 230000010363 phase shift Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0561—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement consisting of a multilayered structure
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0557—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
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- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6672—High-frequency adaptations for passive devices for integrated passive components, e.g. semiconductor device with passive components only
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
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- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/30107—Inductance
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Coils Or Transformers For Communication (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010504733A JP5156825B2 (ja) | 2007-04-30 | 2008-04-29 | 電気部品 |
KR1020097024503A KR101531723B1 (ko) | 2007-04-30 | 2008-04-29 | 전기 구성요소 |
US12/606,417 US8558356B2 (en) | 2007-04-30 | 2009-10-27 | Electrical Component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007020288.3 | 2007-04-30 | ||
DE102007020288A DE102007020288B4 (de) | 2007-04-30 | 2007-04-30 | Elektrisches Bauelement |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/606,417 Continuation US8558356B2 (en) | 2007-04-30 | 2009-10-27 | Electrical Component |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008132212A2 WO2008132212A2 (de) | 2008-11-06 |
WO2008132212A3 true WO2008132212A3 (de) | 2009-02-05 |
Family
ID=39542761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2008/055255 WO2008132212A2 (de) | 2007-04-30 | 2008-04-29 | Elektrisches bauelement |
Country Status (5)
Country | Link |
---|---|
US (1) | US8558356B2 (de) |
JP (1) | JP5156825B2 (de) |
KR (1) | KR101531723B1 (de) |
DE (1) | DE102007020288B4 (de) |
WO (1) | WO2008132212A2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8941395B2 (en) * | 2010-04-27 | 2015-01-27 | 3M Innovative Properties Company | Integrated passive circuit elements for sensing devices |
DE102010032506A1 (de) * | 2010-07-28 | 2012-02-02 | Epcos Ag | Modul und Herstellungsverfahren |
DE102010055649B4 (de) * | 2010-12-22 | 2015-07-16 | Epcos Ag | Duplexer und Verfahren zum Herstellen eines Duplexers |
JP5050111B1 (ja) * | 2011-03-30 | 2012-10-17 | 株式会社東芝 | テレビジョン装置および電子機器 |
EP2607974A1 (de) * | 2011-12-22 | 2013-06-26 | The Swatch Group Research and Development Ltd. | Verfahren zur Herstellung eines Resonators |
WO2013114918A1 (ja) | 2012-01-30 | 2013-08-08 | 株式会社村田製作所 | 弾性波装置 |
US9391010B2 (en) * | 2012-04-02 | 2016-07-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Power line filter for multidimensional integrated circuits |
JP2014135448A (ja) * | 2013-01-11 | 2014-07-24 | Taiyo Yuden Co Ltd | 電子部品 |
US9443758B2 (en) | 2013-12-11 | 2016-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Connecting techniques for stacked CMOS devices |
DE102014216767A1 (de) * | 2014-08-22 | 2016-02-25 | Zf Friedrichshafen Ag | Anordnung zur Kontaktierung einer Leiterplatte |
JP6310371B2 (ja) * | 2014-09-11 | 2018-04-11 | 太陽誘電株式会社 | 弾性波デバイス |
JP6451744B2 (ja) * | 2014-10-29 | 2019-01-16 | 株式会社村田製作所 | 圧電モジュール |
JP6669429B2 (ja) * | 2014-12-25 | 2020-03-18 | 京セラ株式会社 | 弾性波素子および通信装置 |
US10218334B2 (en) * | 2015-03-18 | 2019-02-26 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
US11063575B2 (en) | 2016-02-24 | 2021-07-13 | Telefonaktiebolaget Lm Ericsson (Publ) | Band reject filters |
DE102016111914A1 (de) | 2016-06-29 | 2018-01-04 | Snaptrack, Inc. | Bauelement mit Dünnschicht-Abdeckung und Verfahren zur Herstellung |
US11201125B2 (en) | 2017-02-24 | 2021-12-14 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and semiconductor process |
JP7084739B2 (ja) | 2018-02-21 | 2022-06-15 | 太陽誘電株式会社 | マルチプレクサ |
JP7068902B2 (ja) | 2018-04-09 | 2022-05-17 | 太陽誘電株式会社 | マルチプレクサ |
DE102018118701B3 (de) * | 2018-08-01 | 2019-10-17 | RF360 Europe GmbH | BAW-Resonator mit verbesserter Verbindung der oberen Elektrode |
DE102019120312A1 (de) * | 2019-07-26 | 2021-01-28 | RF360 Europe GmbH | Filtervorrichtung umfassend zwei verbundene Filterschaltungen |
US20210036682A1 (en) * | 2019-07-30 | 2021-02-04 | Intel Corporation | Integrated radio frequency (rf) front-end module (fem) |
Citations (3)
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US20050116790A1 (en) * | 2003-11-27 | 2005-06-02 | Sanyo Electric Co., Ltd. | Antenna duplexer |
US20050195047A1 (en) * | 2003-11-28 | 2005-09-08 | Samsung Electronics Co., Ltd. | RF duplexer |
DE102005029453A1 (de) * | 2005-06-24 | 2006-12-28 | Epcos Ag | Chipbauelement mit verbesserter thermischer Beständigkeit |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2673993B2 (ja) * | 1990-07-02 | 1997-11-05 | 日本無線株式会社 | 表面弾性波装置 |
US5438305A (en) | 1991-08-12 | 1995-08-01 | Hitachi, Ltd. | High frequency module including a flexible substrate |
JP3267049B2 (ja) * | 1994-05-25 | 2002-03-18 | 株式会社村田製作所 | エアブリッジ配線を有するスパイラルインダクタの製造方法 |
JPH08274575A (ja) * | 1995-04-03 | 1996-10-18 | Kokusai Electric Co Ltd | 素子複合搭載回路基板 |
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Also Published As
Publication number | Publication date |
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US8558356B2 (en) | 2013-10-15 |
WO2008132212A2 (de) | 2008-11-06 |
KR101531723B1 (ko) | 2015-06-25 |
JP5156825B2 (ja) | 2013-03-06 |
DE102007020288B4 (de) | 2013-12-12 |
US20100091473A1 (en) | 2010-04-15 |
DE102007020288A1 (de) | 2008-11-06 |
KR20100023816A (ko) | 2010-03-04 |
JP2010526456A (ja) | 2010-07-29 |
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