JP6451744B2 - 圧電モジュール - Google Patents
圧電モジュール Download PDFInfo
- Publication number
- JP6451744B2 JP6451744B2 JP2016556523A JP2016556523A JP6451744B2 JP 6451744 B2 JP6451744 B2 JP 6451744B2 JP 2016556523 A JP2016556523 A JP 2016556523A JP 2016556523 A JP2016556523 A JP 2016556523A JP 6451744 B2 JP6451744 B2 JP 6451744B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- piezoelectric module
- conductor pattern
- thin film
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004020 conductor Substances 0.000 claims description 82
- 239000010409 thin film Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000007261 regionalization Effects 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 52
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Description
20:圧電薄膜
30,30A,30B,30C,30E:固定層
31,31A:犠牲層
40:支持基板
50,50A,50C,50D,50E,50F:導体パターン
60:音響反射層
61:接着層
200:貫通孔
211,212:機能導体
221,222:配線導体
240:導電性ビアホール
300,300A,300E:空隙
Claims (4)
- 互いに背向する一方主面及び他方主面を有する圧電薄膜と、
前記一方主面に形成された機能導体と、
前記他方主面側に位置する支持基板と、
前記圧電薄膜を前記支持基板に固定する固定層と、
前記圧電薄膜と前記支持基板との間に配置された回路素子と、
前記固定層および前記圧電薄膜を厚み方向に貫通する導電性ビアホールと、
前記一方主面に配置され、前記機能導体及び前記導電性ビアホールと接続されている配線導体と、
を備え、
前記圧電薄膜、前記固定層および前記支持基板によって囲まれている空隙を有し、
前記回路素子は、インダクタとして機能する導体パターンを有し、
前記導体パターンにおいて前記インダクタとして機能する部分は、前記空隙内に配置されており、
前記導体パターンの両端は、前記導電性ビアホールと接続されている、圧電モジュール。 - 前記回路素子は、前記圧電薄膜または前記支持基板に形成された導体パターンからなる、
請求項1に記載の圧電モジュール。 - 前記導体パターンの形成領域は、前記機能導体の形成領域と重なっている、
請求項1または2に記載の圧電モジュール。 - 前記導体パターンの形成領域の全体は、前記機能導体の形成領域と重なっている、
請求項3に記載の圧電モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014220509 | 2014-10-29 | ||
JP2014220509 | 2014-10-29 | ||
PCT/JP2015/079765 WO2016068003A1 (ja) | 2014-10-29 | 2015-10-22 | 圧電モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016068003A1 JPWO2016068003A1 (ja) | 2017-05-25 |
JP6451744B2 true JP6451744B2 (ja) | 2019-01-16 |
Family
ID=55857342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016556523A Active JP6451744B2 (ja) | 2014-10-29 | 2015-10-22 | 圧電モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US10469054B2 (ja) |
JP (1) | JP6451744B2 (ja) |
KR (1) | KR102138345B1 (ja) |
CN (1) | CN106716827B (ja) |
WO (1) | WO2016068003A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6427075B2 (ja) * | 2015-07-08 | 2018-11-21 | 太陽誘電株式会社 | 弾性波デバイス、分波器、及びモジュール |
WO2018143044A1 (ja) * | 2017-02-03 | 2018-08-09 | 株式会社村田製作所 | 弾性表面波装置 |
WO2022085581A1 (ja) * | 2020-10-23 | 2022-04-28 | 株式会社村田製作所 | 弾性波装置 |
CN116472670A (zh) * | 2020-11-11 | 2023-07-21 | 株式会社村田制作所 | 弹性波装置 |
WO2022131216A1 (ja) * | 2020-12-14 | 2022-06-23 | 株式会社村田製作所 | 弾性波装置 |
WO2022168937A1 (ja) * | 2021-02-05 | 2022-08-11 | 株式会社村田製作所 | 弾性波装置及び弾性波装置の製造方法 |
CN118591987A (zh) * | 2022-01-21 | 2024-09-03 | 株式会社村田制作所 | 弹性波装置以及弹性波装置的制造方法 |
WO2023157958A1 (ja) * | 2022-02-18 | 2023-08-24 | 株式会社村田製作所 | 弾性波装置及び弾性波装置の製造方法 |
Family Cites Families (30)
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JPS63187713A (ja) * | 1987-01-29 | 1988-08-03 | Toshiba Corp | 集積型圧電薄膜機能素子 |
JP3473485B2 (ja) | 1999-04-08 | 2003-12-02 | 日本電気株式会社 | 薄膜抵抗体およびその製造方法 |
JP2004129223A (ja) * | 2002-07-31 | 2004-04-22 | Murata Mfg Co Ltd | 圧電部品およびその製造方法 |
JP4229122B2 (ja) * | 2003-05-26 | 2009-02-25 | 株式会社村田製作所 | 圧電電子部品、およびその製造方法、通信機 |
KR100485702B1 (ko) * | 2003-05-29 | 2005-04-28 | 삼성전자주식회사 | 지지대를 갖는 박막 벌크 음향 공진기 및 그 제조방법 |
JP2005286658A (ja) * | 2004-03-29 | 2005-10-13 | Sanyo Electric Co Ltd | 半導体装置 |
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JP4517992B2 (ja) * | 2005-09-14 | 2010-08-04 | セイコーエプソン株式会社 | 導通孔形成方法、並びに圧電デバイスの製造方法、及び圧電デバイス |
KR100808760B1 (ko) * | 2005-09-14 | 2008-02-29 | 세이코 엡슨 가부시키가이샤 | 도통구멍 형성 방법, 및 압전 디바이스의 제조 방법, 및압전 디바이스 |
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-
2015
- 2015-10-22 KR KR1020177010218A patent/KR102138345B1/ko active IP Right Grant
- 2015-10-22 CN CN201580052453.1A patent/CN106716827B/zh active Active
- 2015-10-22 WO PCT/JP2015/079765 patent/WO2016068003A1/ja active Application Filing
- 2015-10-22 JP JP2016556523A patent/JP6451744B2/ja active Active
-
2017
- 2017-03-22 US US15/465,630 patent/US10469054B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN106716827A (zh) | 2017-05-24 |
JPWO2016068003A1 (ja) | 2017-05-25 |
US20170194933A1 (en) | 2017-07-06 |
KR102138345B1 (ko) | 2020-07-27 |
WO2016068003A1 (ja) | 2016-05-06 |
KR20170056000A (ko) | 2017-05-22 |
CN106716827B (zh) | 2020-06-19 |
US10469054B2 (en) | 2019-11-05 |
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