WO2008056829A1 - Procédé de fabrication d'un substrat de guide d'onde optique - Google Patents
Procédé de fabrication d'un substrat de guide d'onde optique Download PDFInfo
- Publication number
- WO2008056829A1 WO2008056829A1 PCT/JP2007/072242 JP2007072242W WO2008056829A1 WO 2008056829 A1 WO2008056829 A1 WO 2008056829A1 JP 2007072242 W JP2007072242 W JP 2007072242W WO 2008056829 A1 WO2008056829 A1 WO 2008056829A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical waveguide
- single crystal
- substrate
- electrode
- comb
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
- G02F1/3775—Non-linear optics for second-harmonic generation in an optical waveguide structure with a periodic structure, e.g. domain inversion, for quasi-phase-matching [QPM]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/066—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide channel; buried
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/124—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode interdigital
Definitions
- the present invention relates to a method for manufacturing an optical waveguide substrate.
- the present invention relates to a method of manufacturing an optical waveguide substrate that can be used for a harmonic generation element or the like.
- a polarization inversion structure that forcibly inverts the polarization of a ferroelectric
- an optical frequency modulator using surface acoustic waves an optical wavelength conversion element using polarization inversion of nonlinear polarization, etc.
- a highly efficient wavelength conversion element can be fabricated, and if this is used to convert light such as a solid-state laser,
- a compact and lightweight short wavelength light source that can be applied to fields such as printing, optical information processing, and optical applied measurement control can be configured.
- a so-called voltage application method is known as a method of forming a periodic domain-inverted structure in a ferroelectric nonlinear optical material.
- a comb-shaped electrode is formed on one main surface of a ferroelectric single crystal substrate, a uniform electrode is formed on the other main surface, and a pulse voltage is applied between the two.
- Such a method is described in Japanese Patent Laid-Open Nos. 8-2205 578, Japanese Patent Laid-Open No. 20-05-0195, and Japanese Patent No. 20-05-1097. ,
- the object of the present invention is to reduce the optical loss in the channel type optical waveguide and improve the generation efficiency of the harmonics when forming the optical waveguide substrate having the channel type optical waveguide in which the periodically poled structure is formed. That is.
- the present invention is a method of forming an optical waveguide substrate having a channel-type optical waveguide having a periodically poled structure
- the present inventor has sought the cause of a significant decrease in harmonic generation efficiency due to an increase in loss in the optical waveguide when a periodically poled structure is formed in the channel optical waveguide. As a result, in the process of forming the periodic polarization reversal, it was found that damage was generated in the surface region of the ferroelectric single crystal when a voltage was applied. No literature has been found describing such damage and its effects on harmonic generation.
- the electric field concentrates at the tip edge portion of the comb electrode,
- the polarization inversion portion extends from the tip portion toward the tip. It seems that large damage or crystal defects occur in the crystal under and around the tip of the comb electrode. As a result, when a channel-type optical waveguide is formed in this part, which seems to have high polarization efficiency, the light propagating through the optical waveguide is considered to be affected by damage.
- the present inventor separated the light intensity center P 1 of the optical waveguides 20 and 30 from the tip position PO of the comb-shaped electrode in a plan view as shown in FIGS. 6 and 7, for example.
- the optical loss in the optical waveguides 20 and 30 can be significantly reduced and the harmonic generation efficiency can be increased, and the present invention has been achieved.
- the distance m between the projection position P 2 of the light intensity center P 1 of the optical waveguide when projected onto one main surface 18 a of the substrate and the projection position PO of the tip of the comb electrode is:
- the thickness is preferably 5 ⁇ m or more, more preferably, and more preferably 10 ⁇ m or more.
- the distance m between 2 and 1 ⁇ O is preferably 30 m or less, more preferably 25 5 / xm or less, and even more preferably 20 ⁇ m or less.
- the light intensity center P 1 of the channel type optical waveguide can be determined from an image observed from the end face.
- a lamp light is irradiated to the exit end face side of the waveguide, and an image of the end face of the waveguide is observed with a CCD camera.
- a laser beam (a laser beam with a phase matching wavelength, for example, 980 nm) is incident on the end face on the opposite side of the waveguide, and the waveguide light pattern is observed on the end face on the exit side simultaneously with the end face image by a CCD camera.
- Image analysis Light intensity distribution measurement software
- PO is the projection position when the tip edge of the comb-shaped electrode is projected onto the main surfaces 8a and 18a toward the normal L direction of the main surface.
- P 2 moves P 1 to main surface 8 a, 1 8 a, main surface
- the channel type optical waveguide is a ridge type optical waveguide 20 having a form as illustrated in FIG. 6, for example, the light intensity center P 1 of the ridge type optical waveguide is a geometric center. Match. If the channel-type optical waveguide is an optical waveguide 30 generated by internal diffusion as shown in FIG. 7, the shape of the optical waveguide is not clear, so the geometric center of the optical waveguide Cannot be specified.
- FIG. 1 is a perspective view schematically showing a state in which a periodic polarization reversal structure is formed in the ferroelectric single crystal substrate 8 by a voltage application method.
- Fig. 2 (a) is a cross-sectional view showing a state in which the periodically poled structure 29 is formed on the ferroelectric single crystal substrate 8, and Fig. 2 (b) shows the ferroelectric single crystal of Fig. 2 (a). It is sectional drawing which shows the state which removed the electrode from the board
- FIG. 3 is a cross-sectional view showing a state where the ferroelectric single crystal substrate 8 is bonded to the support base 12.
- FIG. 4 is a cross-sectional view showing a state in which the ferroelectric single crystal substrate 8 of FIG. 3 is processed to form a thin ferroelectric single crystal substrate 18.
- FIG. 5 is a sectional view showing a conventional element in which a ridge type optical waveguide 14 is formed.
- FIG. 6 is a cross-sectional view showing an element according to an example of the present invention in which a ridge type optical waveguide 20 is formed.
- FIG. 7 is a cross-sectional view showing an element according to the present invention in which a diffused waveguide 30 is formed. is there.
- FIG. 8 is a graph showing the relationship between the distance m between P 0 and P 2 and the harmonic output.
- a periodic polarization inversion structure is formed on a ferroelectric single crystal substrate by a voltage application method.
- an off-force substrate made of a ferroelectric single crystal is used as the substrate 8. Since the polarization direction A of the ferroelectric single crystal is inclined at a predetermined angle, for example, 5 °, with respect to one main surface 8a and the other main surface 8b, this substrate 8 is called an off-cut substrate. ing.
- Comb electrode 3 and counter electrode 1 are formed on one main surface 8a of substrate 8, and uniform electrode 9 is formed on the other main surface 8b.
- the comb-shaped electrode 3 includes a large number of elongated electrode pieces 3 a arranged periodically and a long and narrow power feeding portion 2 that connects the roots of the large number of electrode pieces 3 a.
- the counter electrode 1 is composed of an elongated electrode piece, and the counter electrode 1 is provided so as to face the tip of the electrode piece 5.
- the entire substrate 8 is polarized in the direction A.
- a voltage V 1 is applied between the comb electrode 3 and the counter electrode 1
- a voltage V 2 is applied between the comb electrode 3 and the uniform electrode 9.
- the polarization inversion portion 9 gradually progresses in parallel with the direction B from the tip 3 b of each electrode portion 3 a.
- the polarization inversion direction B is opposite to the non-polarization inversion direction A.
- a non-polarized inversion part that is not polarized remains between positions that do not correspond to the electrode parts, that is, between adjacent polarization inversion parts.
- a periodically poled structure 29 is formed in which polarization reversal portions and non-polarization reversal portions are alternately arranged.
- the comb-shaped electrode 3 is then removed and the state shown in FIG. 2 (b) is obtained.
- PO is a projection position where the tip 3 b of the electrode piece 3 a of the comb-shaped electrode 3 is projected onto the main surface 8 a.
- the projection position P O at the tip of the comb-shaped electrode is measured by the alignment mark M created in advance.
- Such alignment marks can be formed by a metal pattern or the like by a normal photolithographic method.
- a channel-type optical waveguide can be formed on the ferroelectric single crystal substrate 8 according to the present invention.
- the substrate is bonded to the support base, and then the substrate is processed and thinned from the other main surface side.
- the ferroelectric single crystal substrate is thinned to increase the confinement of light inside the optical waveguide, thereby improving the conversion efficiency to harmonics, and the desired mechanical strength can be achieved even if the substrate is thinned. Can be granted.
- one main surface 8 a of the ferroelectric single crystal substrate 8 is bonded to the surface 12 a side of the support base 12. Then, the substrate is thinned by processing the other main surface 8 b side of the substrate 8.
- the substrate 18 is thinned. 1 8 a is one main surface of the substrate 18, and 1 8 b is the other main surface.
- the substrate 18 is bonded to the surface 1 2 a of the support base 12 via the adhesive layer 11.
- alignment mark M should be observable from the back side 18 b.
- the light intensity center P 1 of the ridge type optical waveguide 14 is designed to be positioned on the tip projection position P 0 of the comb electrode. This is because the tip part of the comb-shaped electrode has a high voltage, and it was thought that the domain-inverted structure was formed reliably.
- FIG. 6 shows the tip position of the comb electrode as viewed in a plan view of the light intensity center P 1 of the rigid optical waveguide 20.
- the present inventor also shows the tip position P 0 of the comb-shaped electrode in the optical waveguide 30 formed by in-diffusion when the light intensity center P 1 of the optical waveguide 30 is viewed in a plan view.
- the type of the ferroelectric single crystal constituting the ferroelectric single crystal substrate is not limited. However, lithium niobate (L i N b 0 3 ), lithium tantalate (L i T A_ ⁇ 3), lithium niobate one lithium tantalate solid solution, K 3 L i 2 N b 5 O! Each single crystal of 5 is particularly preferred.
- the group consisting of magnesium (Mg), zinc (Zn), scandium (Sc) and indium (In) is used to further improve the optical damage resistance of the three-dimensional optical waveguide.
- One or more selected metal elements can be contained, and magnesium is particularly preferable. From the standpoint that the polarization reversal characteristics (conditions) are clear, lithium niobate single crystals, lithium niobate-lithium tantalate solid solution single crystals, and lithium tantalate single crystals each with magnesium added are particularly preferred.
- the strong dielectric single crystal can contain a rare earth element as a doping component. This rare earth element acts as an additive element for laser oscillation. As this rare earth element, Nd, Er, Tm, Ho, Dy, and Pr are particularly preferable.
- the off-cut angle is not particularly limited. Particularly preferably, the off-cut angle is 1 ° or more, or 20 ° or less.
- a uniform electrode should not be provided on the back side of the substrate, but on one surface, and a voltage should be applied between the comb electrode and the uniform electrode. it can.
- the counter electrode may not be provided, but may be left as a floating electrode.
- a uniform electrode is provided on the back surface, and a voltage can be applied between the comb-shaped electrode and the uniform electrode. In this case, the counter electrode is not necessarily required, but may be left as a floating electrode.
- the material of the comb electrode, counter electrode, and uniform electrode is not limited, but Al, Au, Ag, Cr, Cu, Ni, Ni-Cr, Pd, Ta Is preferred.
- the method for forming the comb electrode, the counter electrode, and the uniform electrode is not particularly limited, and examples thereof include a vacuum deposition method and a vacuum sputtering method.
- the magnitude of the applied voltage is preferably from 3 kV to 8 kV, and the pulse frequency is preferably from 1 Hz to ; ⁇ ⁇ ⁇ ⁇ ⁇ .
- the material of the support substrate to be bonded to the ferroelectric single crystal substrate must be highly insulating, have a uniform volume resistivity within the material, and have a predetermined structural strength.
- This material includes silicon, sapphire, quartz, glass, lithium diborate, lithium tantalate, lithium niobate monolithium tantalate solid solution MgO doped lithium niobate, MgO doped lithium tantalate, ZnO
- Illustrative examples include doped lithium niobate and lithium ZnO doptantalate.
- the material of the adhesive for adhering the ferroelectric single crystal substrate and the supporting base is not particularly limited, and examples thereof include acrylic type, epoxy type ultraviolet curable type, thermosetting type, and combination type resins.
- the processing position of the optical waveguide is determined by measuring the distance between the alignment mark M and the estimated position of the light intensity center of the target optical waveguide while measuring with the microscope attached to the processing equipment.
- the positions of the grooves 17 A and 17 B are determined from the position of the alignment mark M, so that the distance between the geometric center of the rigid optical waveguide and P 0 is determined. To decide.
- the position of the mask for forming a thin film of titanium, zinc or the like before diffusion is determined from the position of the alignment mark M.
- the mask position for Proton exchange is determined from the position of the alignment mark M.
- the method for forming the channel type optical waveguide is not particularly limited.
- ridge type optical waveguides are laser ablation, grinding, dry It can be formed by etching or wet etching.
- the periodic domain-inverted part formed by the present invention can be applied to any optical device having such a domain-inverted part.
- Such an optical device includes, for example, a harmonic generation element such as a second harmonic generation element.
- the harmonic wavelength is 3 3 0— 1
- an optical waveguide substrate having a structure as shown in FIG. 5 (comparative example) or FIG. 6 (example) was produced.
- a comb electrode 2 and a counter electrode 1 were formed on a 0.5 mm-thick MgO 5% doped lithium niobate 5 degree off-cut Y substrate 8 by a photolithographic method.
- the period of the electrode piece 3a was 5.10 ⁇ m.
- the uniform electrode 9 was formed over the entire bottom surface 8 b of the substrate 8.
- a pulse voltage was applied to form a periodically poled structure 29 (FIG. 2 (a)). The electrode was removed from the substrate.
- an adhesive 11 was applied to a non-doped lithium niobate substrate 12 having a thickness of 1 mm, and then bonded to the Mg 2 O doped lithium niobate substrate 8 (FIG. 3), and the other of the Mg 2 O doped lithium niobate substrate 8 was bonded. Grinding and polishing were performed from the main surface 8a side to a thickness of 3.4 m (Fig. 4).
- ridge-type waveguides 14 and 20 were formed by laser-ablation processing. The width of the formed ridges 14 and 20 is 4.5 111, and the grooves 1 78 and 1
- the depth of 7 B was 2 m.
- 0.5- ⁇ m thick Si02 was deposited on the waveguide surface by sputtering.
- the substrate was cut with a dicer to form an element 12 mm long and 1.4 mm wide. Both ends of the device were polished.
- the harmonic output is significantly improved by separating the optical intensity center of the optical waveguide from the tip of the comb electrode.
- the distance m between P 2 and P 0 is set to 5 ⁇ m to 30 ⁇ m, which makes it particularly chopsticks.
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097010353A KR101363782B1 (ko) | 2006-11-09 | 2007-11-09 | 디바이스의 제조 방법 |
CN2007800415703A CN101535887B (zh) | 2006-11-09 | 2007-11-09 | 光波导基板的制造方法 |
JP2008543159A JP5297197B2 (ja) | 2006-11-09 | 2007-11-09 | 光導波路基板の製造方法 |
US12/434,207 US7931831B2 (en) | 2006-11-09 | 2009-05-01 | Optical waveguide substrate manufacturing method |
Applications Claiming Priority (2)
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JP2006303752 | 2006-11-09 | ||
JP2006-303752 | 2006-11-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/434,207 Continuation US7931831B2 (en) | 2006-11-09 | 2009-05-01 | Optical waveguide substrate manufacturing method |
Publications (1)
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WO2008056829A1 true WO2008056829A1 (fr) | 2008-05-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2007/072242 WO2008056829A1 (fr) | 2006-11-09 | 2007-11-09 | Procédé de fabrication d'un substrat de guide d'onde optique |
Country Status (5)
Country | Link |
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US (1) | US7931831B2 (ja) |
JP (1) | JP5297197B2 (ja) |
KR (1) | KR101363782B1 (ja) |
CN (1) | CN101535887B (ja) |
WO (1) | WO2008056829A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103257508A (zh) * | 2012-02-20 | 2013-08-21 | 北京中视中科光电技术有限公司 | 铁电晶体材料的周期极化结构及其极化方法 |
CN111554683A (zh) * | 2020-04-10 | 2020-08-18 | 华南师范大学 | 一种新型光敏铁电拓扑畴纳米岛的制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105074545B (zh) * | 2013-02-21 | 2018-06-22 | 住友大阪水泥股份有限公司 | 光波导元件以及光波导元件的制造方法 |
US9588291B2 (en) * | 2013-12-31 | 2017-03-07 | Medlumics, S.L. | Structure for optical waveguide and contact wire intersection |
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JPH04335620A (ja) * | 1991-05-13 | 1992-11-24 | Sony Corp | 分極反転制御方法 |
JP2001066652A (ja) * | 1999-08-27 | 2001-03-16 | Matsushita Electric Ind Co Ltd | 分極反転構造の形成方法並びにそれを利用した波長変換素子の製造方法 |
JP2003270687A (ja) * | 2002-03-13 | 2003-09-25 | Ngk Insulators Ltd | 周期分極反転構造の形成方法、周期分極反転構造および光導波路素子 |
JP2003307757A (ja) * | 2002-04-16 | 2003-10-31 | Ngk Insulators Ltd | 分極反転部の製造方法 |
JP2004045666A (ja) * | 2002-07-10 | 2004-02-12 | Nippon Telegr & Teleph Corp <Ntt> | 波長変換素子用薄膜基板の製造方法及び波長変換素子用薄膜基板並びに波長変換素子の製造方法 |
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JP3059080B2 (ja) | 1994-08-31 | 2000-07-04 | 松下電器産業株式会社 | 分極反転領域の製造方法ならびにそれを利用した光波長変換素子及び短波長光源 |
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JP2001330866A (ja) * | 2000-05-22 | 2001-11-30 | Fuji Photo Film Co Ltd | 光波長変換素子の製造方法 |
JP2002139755A (ja) * | 2000-11-01 | 2002-05-17 | Fuji Photo Film Co Ltd | 波長変換素子及びその製造方法 |
JP4400816B2 (ja) | 2003-08-21 | 2010-01-20 | 日本碍子株式会社 | 周期分極反転構造の製造方法および光デバイス |
JP4372489B2 (ja) | 2003-08-21 | 2009-11-25 | 日本碍子株式会社 | 周期分極反転構造の製造方法 |
JP4243995B2 (ja) * | 2003-08-21 | 2009-03-25 | 日本碍子株式会社 | 分極反転部の製造方法および光デバイス |
-
2007
- 2007-11-09 JP JP2008543159A patent/JP5297197B2/ja active Active
- 2007-11-09 WO PCT/JP2007/072242 patent/WO2008056829A1/ja active Application Filing
- 2007-11-09 CN CN2007800415703A patent/CN101535887B/zh active Active
- 2007-11-09 KR KR1020097010353A patent/KR101363782B1/ko active IP Right Grant
-
2009
- 2009-05-01 US US12/434,207 patent/US7931831B2/en active Active
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JPH04335620A (ja) * | 1991-05-13 | 1992-11-24 | Sony Corp | 分極反転制御方法 |
JP2001066652A (ja) * | 1999-08-27 | 2001-03-16 | Matsushita Electric Ind Co Ltd | 分極反転構造の形成方法並びにそれを利用した波長変換素子の製造方法 |
JP2003270687A (ja) * | 2002-03-13 | 2003-09-25 | Ngk Insulators Ltd | 周期分極反転構造の形成方法、周期分極反転構造および光導波路素子 |
JP2003307757A (ja) * | 2002-04-16 | 2003-10-31 | Ngk Insulators Ltd | 分極反転部の製造方法 |
JP2004045666A (ja) * | 2002-07-10 | 2004-02-12 | Nippon Telegr & Teleph Corp <Ntt> | 波長変換素子用薄膜基板の製造方法及び波長変換素子用薄膜基板並びに波長変換素子の製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103257508A (zh) * | 2012-02-20 | 2013-08-21 | 北京中视中科光电技术有限公司 | 铁电晶体材料的周期极化结构及其极化方法 |
CN111554683A (zh) * | 2020-04-10 | 2020-08-18 | 华南师范大学 | 一种新型光敏铁电拓扑畴纳米岛的制备方法 |
CN111554683B (zh) * | 2020-04-10 | 2023-08-22 | 华南师范大学 | 一种新型光敏铁电拓扑畴纳米岛的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2008056829A1 (ja) | 2010-02-25 |
KR20090083387A (ko) | 2009-08-03 |
US7931831B2 (en) | 2011-04-26 |
CN101535887B (zh) | 2012-06-20 |
KR101363782B1 (ko) | 2014-02-14 |
CN101535887A (zh) | 2009-09-16 |
US20090212449A1 (en) | 2009-08-27 |
JP5297197B2 (ja) | 2013-09-25 |
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