WO2007129711A1 - 接着シート、これを用いた回路部材の接続構造及び半導体装置 - Google Patents
接着シート、これを用いた回路部材の接続構造及び半導体装置 Download PDFInfo
- Publication number
- WO2007129711A1 WO2007129711A1 PCT/JP2007/059520 JP2007059520W WO2007129711A1 WO 2007129711 A1 WO2007129711 A1 WO 2007129711A1 JP 2007059520 W JP2007059520 W JP 2007059520W WO 2007129711 A1 WO2007129711 A1 WO 2007129711A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- adhesive
- circuit
- adhesive layer
- film
- adhesive sheet
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/8388—Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10336—Aluminium gallium arsenide [AlGaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10349—Aluminium gallium indium phosphide [AlGaInP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/0156—Temporary polymeric carrier or foil, e.g. for processing or transferring
Definitions
- the present invention relates to an adhesive sheet, a circuit member connection structure using the adhesive sheet, and a semiconductor device.
- ACF anisotropic conductive films
- NCF insulating adhesive films
- ACFs are placed between opposing electrodes when connecting printed circuit boards, LCD glass substrates, flexible printed circuit boards, and other semiconductor elements such as ICs and LSIs. Connect the electrodes together. That is, ACF and NCF can exhibit both the electrical conductivity between the electrodes facing each other and the insulation between the adjacent electrodes, and can perform electrical connection and mechanical connection between the two substrates.
- an adhesive component such as an epoxy resin adhesive or an acrylic adhesive is suitably used.
- ACF is obtained by dispersing conductive particles blended in the adhesive component as necessary.
- These circuit connection materials are generally in the form of a film and are commercialized in a state of being laminated on a support base material such as a PET (polyethylene terephthalate) film.
- the circuit connection material is fixed on the substrate, and then the support base material is removed and thermocompression bonded, the adhesive component is cured to perform mechanical connection between the members, and between the opposing electrodes directly or conductive particles To make electrical connection through contact.
- the fixing is also referred to as temporary fixing, temporary pressing or temporary connection in order to distinguish it from thermocompression bonding after removing the supporting base material.
- the temperature at which the ACF is fixed on the substrate is in a wide range from room temperature to about 80 ° C.
- the ACF may be peeled off from the substrate when the supporting base material is removed.
- the adhesive component oozes out and wraps around the surface of the supporting base opposite to the side where the ACF is laminated.
- adhesion failure of the edge portion of the adhesive may occur.
- the adhesive component oozes out, there is a problem that the crimping head is contaminated.
- Patent Document 1 proposes to improve an apparatus for applying an adhesive with a supporting base material.
- Patent Document 1 Japanese Patent Laid-Open No. 2001-171897
- the present invention has been made in view of the above circumstances, and in an adhesive sheet comprising a support base and an adhesive layer made of an adhesive composition provided on the support base, a wider range of temperature conditions than before. It is an object of the present invention to provide an adhesive sheet capable of sufficiently temporarily fixing an adhesive layer on a substrate, a circuit member connection structure using the same, and a semiconductor device.
- the present invention is an adhesive sheet comprising a supporting base material and an adhesive layer made of an adhesive composition provided on the supporting base material, and has a thickness Ts (hereinafter simply referred to as "Ts" ) And the thickness Ta of the adhesive layer (hereinafter simply referred to as “Ta”) satisfy the condition represented by the following formula (1), and the Ts is 42 xm or less. I will provide a.
- the adhesive sheet can sufficiently fix the adhesive layer on the substrate under a wider range of temperature conditions than before. The reason why such an effect is achieved has not been clarified in detail at present, but the present inventors consider as follows. However, the factor is not limited to this.
- the adhesive composition forms a film-like adhesive layer after being applied on a support substrate in a liquid state. At this time, since the support base material and the adhesive layer have different mechanical or thermal characteristics, a stress is generated between the support base material and the adhesive layer. In other words, when Ta / Ts is less than 0.40, the thickness Ta of the adhesive layer becomes relatively thin, and the physical properties of the supporting base material dominate when forming the adhesive layer, and the adhesive layer depends on the type of the supporting base material.
- Elongation or shrinkage stress tends to work greatly.
- TaZTs exceeds 0.65
- the physical properties of the adhesive layer become dominant during the formation of the adhesive layer, and the elongation or shrinkage stress tends to act greatly on the adhesive layer depending on the type of adhesive. Therefore, in such a state, it becomes difficult to sufficiently temporarily fix the adhesive sheet onto the substrate.
- the adhesive sheet can be temporarily fixed, the adhesive layer is also peeled off from the base material when the supporting base material is peeled off. It becomes easy. Therefore, by satisfying the condition expressed by the above formula (1) for Ts and Ta, the stress generated between the support substrate and the adhesive layer when the adhesive layer is formed on the support substrate can be reduced.
- the adhesive sheet can be sufficiently temporarily fixed on the substrate.
- the angle of the peeling point between the support base and the adhesive layer can be increased when the support base is peeled off after the adhesive sheet is fixed to the substrate.
- the material can be easily removed. Therefore, it is possible to prevent part or all of the edge portion of the adhesive layer from peeling off from the substrate. Therefore, the adhesive sheet of the present invention can sufficiently fix the adhesive layer on the substrate under a wider range of temperature conditions than before.
- Ta / Ts exceeds 0.65, the thickness Ta of the adhesive layer becomes relatively large. Therefore, when the adhesive sheet is temporarily fixed, the adhesive composition exudes and the side surface of the support substrate It becomes easier to wrap around the surface opposite to the side where the part or adhesive layer is provided. For this reason, when removing the support base material, there is a tendency that adhesion at the edge of the adhesive layer becomes poor, or the pressure-bonding head is contaminated.
- a protective film is further provided on the adhesive layer, and that the thickness Tp (hereinafter simply referred to as “ ⁇ ”) of the protective film is Ts or less. This can more effectively prevent the adhesive layer from peeling off from the support substrate when the protective film is removed from the adhesive layer force.
- the peel strength between the support substrate and the adhesive layer is preferably equal to or higher than the peel strength between the protective film and the adhesive layer. In this case, protect it from the adhesive sheet. Since the adhesive layer can be prevented from peeling when the protective film is peeled off, the adhesive layer can be temporarily fixed on the substrate in a wider range of temperature conditions than before. It becomes.
- the adhesive composition preferably contains a thermoplastic resin, a radical polymerizable compound, and a radical polymerization initiator. Since the adhesive layer made of such an adhesive composition is excellent in adhesion to various substrates, the adhesive sheet of the present invention is more effective and effective on the substrate under a wider range of temperature conditions than before. Securely temporarily fixed.
- the adhesive composition preferably contains a thermoplastic resin, a thermosetting resin, and a latent curing agent. Since the adhesive layer made of such an adhesive composition is excellent in adhesion to various substrates, the adhesive sheet of the present invention is more effective and reliable on the substrate under a wider range of temperature conditions than before. It can be temporarily fixed.
- the adhesive composition preferably further comprises conductive particles.
- the adhesive composition itself can easily have conductivity. Therefore, an adhesive sheet provided with an adhesive layer made of the above adhesive composition can exhibit an electric connection anisotropy more satisfactorily.
- the support substrate includes at least one film selected from the group consisting of a polyethylene terephthalate film, an oriented polypropylene film, a polyethylene film, and a polyimide film.
- the adhesive sheet of the present invention can more effectively exert the effect of the present invention of temporarily fixing the adhesive layer on the substrate under a wider range of temperature conditions than in the past.
- the present invention provides a first circuit member in which a first circuit electrode is formed on a main surface of a first circuit board, and a second circuit electrode on a main surface of a second circuit board.
- the second circuit member formed is provided between the main surface of the first circuit board and the main surface of the second circuit board, and the first circuit electrode and the second circuit electrode are arranged to face each other.
- a circuit connection member that is electrically connected in a state where the circuit member is connected.
- the circuit connection member provides a connection structure for a circuit member that is a cured product of the adhesive layer in the adhesive sheet. In such a circuit member connection structure, the circuit connection member of the present invention is connected.
- the adhesive layer can be temporarily fixed on the circuit board under a wider range of temperature conditions than before.
- this connection structure can sufficiently secure the conductivity between the opposing electrodes and the insulation between the adjacent electrodes.
- the present invention further includes a semiconductor element, a substrate on which the semiconductor element is mounted, a semiconductor element and a semiconductor element connection member provided between the semiconductor element and the substrate, and electrically connecting the semiconductor element and the substrate.
- the connection member provides a semiconductor device that is a cured product of the adhesive layer in the adhesive sheet.
- the semiconductor connection member since the semiconductor connection member is made of a cured product of the adhesive layer in the adhesive sheet of the present invention, the adhesive layer can be temporarily fixed on the substrate under a wider range of temperature conditions than in the past. .
- this semiconductor device can sufficiently secure conductivity between the semiconductor element and the substrate.
- the adhesive layer is formed on the substrate under a wider range of temperature conditions than before.
- An adhesive sheet that can be temporarily fixed can be provided.
- FIG. 1 is a partial cross-sectional view showing an embodiment of a circuit member connection structure according to the present invention.
- FIG. 2 is a partial cross-sectional view showing an embodiment of a circuit member connection structure of the present invention.
- FIG. 3 is a series of process diagrams for connecting circuit members.
- FIG. 4 is a partial cross-sectional view showing an embodiment of a semiconductor device of the present invention.
- the adhesive sheet which concerns on suitable embodiment of this invention is equipped with the contact bonding layer which consists of a support base material and the adhesive composition provided on the support base material.
- the adhesive layer provided on the support substrate is preferably composed of an adhesive composition containing a thermoplastic resin, a radical polymerizable compound and a radical polymerization initiator.
- the thermoplastic resin used in the present invention is not particularly limited, and a known resin can be used. Specifically, for example, phenoxy resin, polyvinyl formal resin, polystyrene resin, polyvinyl propylar resin, polyester resin, polyamide resin, xylene resin, polyurethane resin, and the like can be used. These can be used alone or in combination of two or more. Furthermore, these resins may contain a siloxane bond or a fluorine substituent in the molecule. These can be suitably used as long as the resins to be mixed are completely compatible with each other or are in a state of white turbidity due to microphase separation.
- the thermoplastic resin can improve the film-forming property of the adhesive composition.
- Film forming property indicates mechanical properties that do not easily tear, crack, or stick when a liquid adhesive composition is solidified into a film. If the film can be handled easily in a normal state (for example, at room temperature), it can be said that the film formability is good.
- thermoplastic resins it is preferable to use a phenoxy resin because of its excellent adhesiveness, compatibility, heat resistance, and mechanical strength.
- a phenoxy resin reacts a bifunctional phenol with epihalohydrin to a high molecular weight. Or by polyaddition of a bifunctional epoxy resin and a bifunctional phenol. Further, the phenoxy resin may be modified with a radical polymerizable functional group or other reactive compound. The phenoxy resin can be used alone or in combination of two or more.
- the molecular weight of the thermoplastic resin described above is not particularly limited. However, the larger the molecular weight of the thermoplastic resin, the easier it is to form a film described later, which affects the fluidity as an adhesive. It is also possible to set a wide range of melt viscosity. If the melt viscosity can be set in a wide range, when used for connection of semiconductor elements, liquid crystal elements, etc., even if the pitch between elements and between wirings is narrowed, adhesion of adhesive to peripheral members is further prevented. And throughput can be improved.
- the general weight average molecular weight is preferably 5000 to 150,000, and particularly preferably 10,000 to 80,000. When the weight average molecular weight is less than 5,000, the film formability tends to be insufficient when used as a film described later, and when the weight average molecular weight exceeds 150,000, the compatibility with other components tends to be poor.
- the weight average molecular weight in the present specification is determined by gel permeation chromatography (GPC) analysis according to the following conditions under the following conditions, and converted using a standard polystyrene calibration curve.
- the radical polymerizable compound according to the present invention has a functional group that is polymerized by radicals.
- radicals For example, (meth) acrylic acid compounds, maleimide compounds, and styrene derivatives are preferably used.
- This radical polymerizable compound contains a polymerizable monomer and a polymerizable monomer. It is also possible to use a polymerizable monomer and a polymerizable oligomer in combination with any of ligomers.
- polymerizable oligomers generally have a high viscosity
- a polymerizable oligomer it is preferable to adjust the viscosity by using a polymerizable monomer such as a low-viscosity polymerizable polyfunctional (meth) acrylate.
- a radical polymerizable compound a polymer or copolymer having at least one of (meth) acrylic acid, (meth) acrylic acid ester or acrylonitrile as a monomer component may be used.
- a copolymer acrylic rubber containing a glycidyl (meth) acrylate containing a glycidyl ether group is used in combination, stress relaxation is excellent, which is preferable.
- the weight average molecular weight of the acrylic rubber is preferably 200,000 or more from the viewpoint of increasing the cohesive strength of the adhesive composition.
- Examples of the radically polymerizable compound include oligomers such as epoxy (meth) acrylate oligomer, urethane (meth) acrylate oligomer, polyether (meth) acrylate oligomer, polyester (meth) acrylate oligomer, Trimethylolpropane tri (meth) acrylate, polyethylene glycol di (meth) acrylate, polyalkylene glycol di (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyl dioxetyl (meth) acrylate, neopen Tildaricol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate, isocyanuric acid modified bifunctional (meth) acrylate, isocyanuric acid modified trifunctional (meth) acrylate, 2, 2'— Di (meta) Atari Examples thereof include polyfunctional (meth) acrylate compounds such as
- the blending ratio of the radically polymerizable compound is preferably 50 to 250 parts by mass with respect to 100 parts by mass of the thermoplastic resin 60 to more preferably 150 parts by mass.
- the blending ratio of the radionole polymerizable compound is less than 50 parts by mass, the heat resistance of the cured product of the adhesive composition tends to decrease, and when it exceeds 250 parts by mass, the film formability of the adhesive composition is poor. It tends to be sufficient.
- the radical polymerization initiator according to the present invention includes at least one of heating and light irradiation such as a conventionally known peroxide compound (organic peroxide), azo compound or photoinitiator.
- a conventionally known peroxide compound organic peroxide
- azo compound azo compound
- photoinitiator A compound that decomposes by one of the treatments to generate a free radical is used.
- Organic peroxides and azo compounds generate free radicals mainly by heating.
- one or more organic peroxides and / or azo compounds are appropriately selected depending on the desired connection temperature, connection time, pot life, and the like.
- the organic peroxide is an organic peroxide having a 10-hour half-life temperature of 40 ° C or higher and a 1-minute half-life temperature of 180 ° C or lower from the viewpoint of achieving both high reactivity and a long pot life.
- Oxides are preferred
- Organic peroxides having a 10-hour half-life temperature of 60 ° C or higher and a 1-minute half-life temperature of 170 ° C or lower are more preferable.
- the organic peroxide preferably has a chlorine ion or organic acid content of 5000 ppm or less in order to prevent corrosion of circuit electrodes (connection terminals) of the circuit member.
- the organic peroxide is selected from the group consisting of disilver oxide, peroxydicarbonate, peroxyester, peroxyketal, dialkyl peroxide, hard mouth peroxide and silyl peroxide.
- One or more selected are preferably used.
- it consists of peroxyesters, peroxyketals, dialkyl peroxides, hydrated peroxides, and silyl peroxides.
- One or more organic peroxides selected from the group are more preferred.
- the organic peroxide is more preferably a peroxyester and / or a peroxyketal in that higher reactivity can be obtained. These may be used alone or in combination of two or more.
- disilver oxide examples include isobutyl peroxide, 2,4-dichlorobenzoyl peroxide, 3,5,5_trimethylhexanoyl peroxide, octa-noyl peroxide, lauroyl peroxide, stearoyl Peroxides, succinic peroxides, benzoyl peroxide and benzoyl peroxide. These may be used alone or in combinations of two or more.
- dialkyl peroxide examples include bis, bis, bis (t_butylperoxy) diisopropylbenzene, dicumyl peroxide, 2,5-dimethyl_2,5-di (t_butylperoxy) hexane and t_ Butyl Tamil Peroxide is mentioned. This Are used alone or in combination of two or more.
- peroxydicarbonate examples include di-n-propylperoxydicarbonate, diisopropylperoxydicarbonate, bis (4-tert-butylcyclohexylene) peroxydicarbonate, and di-2- Examples include ethoxymethoxyperoxydicarbonate, bis (2-ethynolehexyloxy) dicarbonate, dimethoxybutylperoxydicarbonate, and bis (3-methyl-1-methoxybutylberoxy) dicarbonate. These may be used alone or in combinations of two or more.
- Examples of the peroxyester include Tamil peroxyneodecanoate, 1,1,3,3-tetramethylbutylperoxyneodecanoate, 1-cyclohexyl_1-methyle Tilperoxyneodecanoate, t-hexylperoxyneodecanoate, t-butylperoxybivalate, 1,1,3,3-tetramethylbutylperoxy_2_ethylhexanoate, 2,5_dimethylol 2,5_bis (2-ethylhexylberoxy) hexane, 1-cyclohexyl lumine 1-methylethylperoxy 2-ethyl hexanoate, t-hexylperoxy 2-ethylhexanoate, t-butylperoxy 2-ethylhexanoate, t-butylperoxyisobutyrate, 1,1 bis (t-butylperoxy) cyclohe
- peroxyketals examples include 1,1_bis (t-hexylperoxy) 1,3,3,5-trimethylcyclohexane, 1,1_bis (t-hexyloxy) cyclohexane. 1, 1_bis (t_butylperoxy) _3,3,5-trimethylcyclohexane, 1,1_ (t_butylperoxy) cyclododecane and 2,2_bis (t_butylperoxy) decane . These may be used alone or in combinations of two or more.
- hydride peroxide examples include diisopropylbenzene hydride peroxide. Side and cumene hydride peroxide. These may be used alone or in combination of two or more.
- silyl peroxide examples include t-butyltrimethylsilyl peroxide, bis (t-butyl) dimethylsilyl peroxide, t_butyltributylsilyl peroxide, and bis (t-butyl) dibulylsilyl peroxide.
- examples thereof include oxide, tris (t-butyl) butylsilyl peroxide, t-butyltriallylsilyl peroxide, bis (t-butyl) dirylsilyl peroxide, and tris (t-butyl) arylsilyl peroxide. These may be used alone or in combinations of two or more.
- the blending ratio of the radical polymerization initiator can be appropriately set depending on the intended connection temperature, connection time, pot life, and the like. For example, when the connection time is 10 seconds or less, in order to obtain a sufficient reaction rate, the blending ratio of the radical polymerization initiator is 0 with respect to a total of 100 parts by mass of the radical polymerizable compound and the thermoplastic resin. :! ⁇ 30 parts by mass is preferred 1-20 parts by mass is more preferred. If the blending ratio of the radical polymerization initiator is less than 0.1 part by mass, the reaction rate decreases, and the cured product of the adhesive composition tends to be difficult to cure. When the blending ratio of the radical polymerization initiator exceeds 30 parts by mass, the fluidity of the adhesive composition decreases, the connection resistance increases, or the pot life of the adhesive composition decreases. It is in.
- the adhesive layer provided on the support substrate is a thermoplastic resin.
- the adhesive composition comprises a thermosetting resin and a latent curing agent.
- thermoplastic resin the same thermoplastic resin as that described above can be used as the thermoplastic resin.
- an epoxy resin is preferable.
- the epoxy resin is used alone or in combination of various epoxy compounds having two or more glycidyl groups in one molecule. Specifically, bisphenol-type epoxy resin derived from epichlorohydrin and bisphenol A, F, AD, etc., epoxy derived from epichloronohydrin and phenol novolac or cresol novolac force, etc. Novolak resin or naphthalene type epoxy resin having a skeleton containing naphthalene ring, glycidylamine type epoxy resin, glycidyl ether type epoxy resin, biphenyl type epoxy resin, alicyclic type Poxy resin etc. are mentioned. These can be used singly or in combination of two or more.
- the epoxy resin is preferably a high-purity product in which impurity ions (Na + , C ⁇ , etc.) and hydrolyzable chlorine are reduced to 3 OOppm or less in order to prevent electron migration.
- the curing agent for the thermosetting resin is preferably a latent curing agent from the viewpoint of obtaining a longer length and pot life.
- the thermosetting resin is an epoxy resin
- examples of the latent curing agent include imidazole-based, hydrazide-based, boron trifluoride-amine complex, sulfonium salt, ammineimide, polyamine salt, dicyandiamide and the like.
- a microcapsule obtained by coating these curing agents with a polyurethane-based or polyester-based polymer substance or the like. These may be used alone or in combination of two or more, and may be used in combination with a decomposition accelerator, an inhibitor and the like.
- the blending ratio of the latent curing agent is 0.:! To 60 parts by mass with respect to a total of 100 parts by mass of the thermoplastic resin and the thermosetting resin in order to obtain a sufficient reaction rate. Preferred:! To 20 parts by mass is more preferable. If the blending ratio of the latent curing agent is less than 0.1 parts by mass, the reaction rate tends to decrease, the adhesive strength decreases, and the connection resistance tends to increase. If the blending ratio of the latent curing agent exceeds 60 parts by mass, the fluidity of the adhesive composition will decrease, the connection resistance will increase, and the pot life of the adhesive composition will become shorter. is there.
- curing agents may be used alone or in combination, and may be used in combination with a decomposition accelerator, an inhibitor and the like.
- a microcapsule obtained by coating the above curing agent with a polyurethane-based or polyester-based polymer substance because the pot life is extended.
- connection can be obtained by direct contact of circuit electrodes facing each other at the time of connection.
- the conductive particles included as necessary in the present invention are not particularly limited as long as they have electrical conductivity capable of obtaining electrical connection.
- the conductive particles include metal particles such as Au, Ag, Ni, Cu, and solder, and carbon.
- the conductive particles may be one in which core particles are covered with one layer or two or more layers, and the outermost layer has conductivity.
- Au is most preferable.
- the conductive particles are formed by coating the surface of a particle mainly composed of a transition metal as a nucleus or a layer mainly composed of a transition metal covering the nucleus with a layer mainly composed of a noble metal. It's okay if anything.
- the conductive particles have insulating particles mainly composed of non-conductive glass, ceramics, plastics, etc. as nuclei, and the surfaces of the nuclei are coated with a layer containing the above metal or carbon as a main component. May be.
- the conductive particles are formed by covering nuclei that are insulating particles with a conductive layer
- the insulating particles are mainly composed of plastic, and the outermost layer is composed mainly of a noble metal. It is preferable to do.
- the adhesive composition is used as an electrical connection material such as a circuit connection material
- the conductive particles can be satisfactorily deformed by heating and pressurization.
- the contact area between the conductive particle electrode and the connection terminal increases. Therefore, the connection reliability of the electrical connection material can be further improved.
- the conductive particles are particles containing, as a main component, a metal that is melted by the heating.
- the thickness of the conductive layer is 100 A (lOnm) or more in order to obtain better conductivity. I like it.
- the conductive particles are formed by coating the surface of a layer mainly composed of a transition metal as a nucleus or a layer mainly composed of a transition metal covering the nucleus with a layer mainly composed of a noble metal.
- the thickness of the outermost layer containing the above-mentioned noble metal as a main component is preferably 300 A (30 nm) or more. When this thickness is less than 300 A, the outermost layer tends to break.
- the thickness of the conductive layer is preferably 1 ⁇ m or less.
- the blending ratio in the case of using conductive particles is not particularly limited, but it is preferably 0.:! To 30 parts by volume with respect to 100 parts by volume of the adhesive composition. ⁇ : More preferably, it is 10 parts by volume. If this value is less than 0.1 part by volume, good conductivity tends to be hardly obtained, and if it exceeds 30 parts by volume, short circuits such as circuits tend to occur.
- the mixing ratio (volume part) of the conductive particles is determined based on the volume of each component before curing the adhesive composition at 23 ° C.
- the volume of each component can be converted from weight to volume using specific gravity, or an appropriate solvent (water, alcohol, etc.) that does not dissolve or swell the component and wets the component well. It can be obtained by a method of putting the component into a container such as a measuring cylinder and calculating from the increased volume.
- a bonding aid such as a coupling agent, an adhesion improver, and a leveling agent may be appropriately added to the adhesive composition.
- the adhesive composition according to the present invention may contain rubber.
- a stabilizer can be added to this adhesive composition in order to control the curing rate and impart storage stability.
- the adhesive composition may contain fillers, softeners, accelerators, anti-aging agents, colorants, flame retardants, thixotropic chiral IJ, phenol resins, melamine resins, isocyanates, etc. Good.
- the adhesive composition contains a filler (filler), it is preferable because improvement in connection reliability and the like can be obtained.
- the filler can be used if it has insulating properties and its maximum diameter is less than the average particle diameter of the conductive particles.
- the blending ratio of the filler is preferably 5 to 60 parts by volume with respect to 100 parts by volume of the adhesive composition. When the proportion of the filler exceeds 60 parts by volume, the effect of improving the reliability tends to be saturated, and when it is less than 5 parts by volume, the effect of adding the filler tends to be small.
- a ketimine, bur group, acrylic group, amino group, epoxy group, and isocyanate group-containing material can be preferably used from the viewpoint of improving adhesiveness.
- a silane coupling agent having an acrylic group (3-methacryloxypropyl) trimethoxysilane, (3-ataryloxypropyl) trimethoxysilane, (3-methacryloxypropyl) Dimethoxymethylsilane, (3-Atalyloxypropyl) dimethoxymethylsilane, N- ⁇ (aminoethyl) ⁇ -aminopropyltrimethoxysilane, ⁇ - ⁇ (aminoethyl) ⁇ — Examples include aminopropylmethyldimethoxysilane, ⁇ -aminopropyltriethoxysilane, ⁇ -phenylmono-aminopropyltrimethoxysilane, and the like.
- silane coupling agent having ketimine examples include those obtained by reacting the above silane coupling agent having an amino group with a ketone compound such as acetone, methyl ethyl ketone, methyl isobutyl ketone and the like.
- silane coupling agents having an epoxy group include ⁇ -glycidyloxypropyltrimethoxysilane, y-glycidyloxypropyltriethoxysilane, ⁇ -glycidyloxypropyl monomethyldimethoxysilane, and ⁇ -glycidyloxypropyl monomethyl. Jetoxysilane and the like can be mentioned.
- the blending ratio of the coupling agent is preferably 0.:! To 20 parts by weight with respect to 100 parts by weight in total of the other blends in the adhesive composition.
- the blending ratio of the coupling agent is less than 0.1 parts by mass, there is a tendency that a substantial addition effect cannot be obtained.
- the blending ratio of the coupling agent exceeds 20 parts by mass, the film formability of the adhesive layer when the adhesive layer made of the adhesive composition is formed on the support substrate is lowered, and the film thickness strength is lowered. Tend to.
- the support substrate used is preferably in the form of a sheet or film. Further, the support substrate may have a shape in which two or more layers are laminated.
- the supporting substrate preferably includes at least one film selected from the group consisting of a polyethylene terephthalate (PET) film, an oriented polypropylene (OPP) film, a polyethylene (PE) film, and a polyimide film.
- PET film is preferable from the viewpoint of improving dimensional accuracy and reducing costs.
- the support base material may be obtained by treating the surface on the side on which the adhesive layer is provided with a release treatment agent as necessary in order to more easily peel the support base material from the adhesive layer.
- the mold release treatment agent examples include silicone, silicone alkyd, amino alkyd, alkyl alkyd, and melamine.
- the support substrate may have a surface coated with a polymer or the like.
- the support substrate may be provided with an antistatic layer. These treatments may be used alone or in combination of two or more.
- the thickness Ts of the supporting substrate when the surface treatment is performed indicates a value after the surface treatment.
- the thickness Ts of the supporting base material used in the present invention is 42 ⁇ or less. When Ts exceeds 42 / im, part or all of the edge of the adhesive layer tends to peel from the substrate.
- the lower limit of Ts is not particularly limited as long as the thermal history when the adhesive layer is provided on the supporting substrate is not cut by mechanical stress or the thickness does not change easily, but it is 18 xm or more. I like it. If Ts is less than 18 zm, there is a tendency for the cut or thickness to change easily due to thermal history or mechanical stress.
- the above-mentioned supporting substrate may be produced by a conventional method, which may be a commercially available one.
- the thickness Ts of the supporting substrate and the thickness Ta of the adhesive layer satisfy the condition represented by the following formula (1).
- Ta / Ts is preferably 0.42 or more and 0.63 or less, more preferably 0.45 or more and 0.60 or less, and particularly preferably 0.47 or more and 0.58 or less.
- Ta / Ts When Ta / Ts is less than 0.40, the thickness Ta of the adhesive layer becomes relatively thin, and the physical properties of the supporting base material dominate when forming the adhesive layer. There is a tendency for the elongation or shrinkage stress to act greatly on the layer. On the other hand, if Ta / Ts exceeds 0.65, the physical properties of the adhesive layer become dominant during the formation of the adhesive layer, and there is a tendency for the elongation or shrinkage stress to act greatly on the adhesive layer depending on the type of adhesive. Therefore, in such a state, it is difficult to temporarily fix the adhesive sheet onto the substrate sufficiently, and even if it can be temporarily fixed, the adhesive layer tends to peel along with the supporting base material when the supporting base material is peeled off.
- the stress generated between the support substrate and the adhesive layer when the adhesive layer is formed on the support substrate can be reduced.
- the adhesive sheet can be sufficiently temporarily fixed on the substrate.
- Ta / Ts exceeds 0.65, the adhesive layer thickness Ta becomes relatively thick, so that the adhesive sheet is bonded when temporarily fixed.
- the agent composition oozes out and easily wraps around the surface on the side opposite to the side portion of the support base or the side on which the adhesive layer is provided. Therefore, when removing the support substrate, the edge of the adhesive layer tends to be poorly bonded, and the crimping head tends to be contaminated.
- an adhesive composition as a method of providing an adhesive layer on a support substrate, a method of dissolving the adhesive composition in a solvent and applying the solution on the support substrate, and then removing the solvent, an adhesive composition
- examples thereof include a method of heating an object to ensure fluidity, coating the substrate as it is and cooling it, and a method of bonding a support substrate to a previously formed adhesive layer.
- the adhesive sheet of the present invention may be produced using any of the above methods.
- the adhesive composition is dissolved in a solvent and applied onto the support substrate, and then the solvent is added.
- the adhesive layer provided on the support substrate may be a single layer or may be formed by stacking two or more layers having different compositions.
- a protective film may be further provided on the adhesive layer.
- the protective film is not particularly limited, but preferably includes at least one film selected from the group consisting of a polyethylene terephthalate (PET) film, an oriented polypropylene (OPP) phenol, a polyethylene (PE) film, and a polyimide film.
- PET polyethylene terephthalate
- OPP oriented polypropylene
- PE polyethylene
- PET film is desirable from the viewpoint of cost reduction.
- a method of arranging the protective film a method of laminating a protective film on the surface of the adhesive layer of the adhesive sheet with a laminator or the like, or an adhesive sheet and a protective film in which another adhesive layer is arranged between the adhesive layers are used. Can be done without any restrictions.
- the protective film may be surface-treated with a release treatment agent as necessary.
- the mold release treatment agent include silicone, silicone alkyd, amino alkyd, alkyl alkyd, and melamine. You can also coat the surface of the protective film with a polymer. Further, the protective film may be provided with an antistatic layer. These can be performed singly or in combination of two or more.
- Protective Film Thickness When Surface Treatment is Performed TP is usually the thickness after the surface treatment is performed.
- the thickness Tp of the protective film is preferably equal to or less than the thickness Ts of the supporting base material in order to prevent the adhesive layer from peeling off the supporting base material when the protective film is removed.
- the peel strength between the support substrate and the adhesive layer is preferably equal to or higher than the peel strength between the protective film and the adhesive layer. If the peel strength between the support substrate and the adhesive layer is less than the peel strength between the protective film and the adhesive layer, when the protective film is peeled off from the adhesive layer, there is a tendency to peel first between the support substrate and the adhesive layer. is there
- the relationship between the peel strengths described above is, for example, for each of a laminate obtained by laminating a support base material and an adhesive layer and a laminate obtained by laminating an adhesive layer and a protective film, using a commercially available rheometer. , ⁇ I Bow S when peeled at a tension rate of 50 mm / min.
- the adhesive sheet of this embodiment can be fixed to an adherend in a wide temperature range of 30 to 80 ° C.
- the heating time is not particularly limited, but 0.1 to: 10 seconds are preferable 0.3 to 8 seconds are more preferable 0.5 to 5 seconds are more preferable. 0. If it is less than 1 second, the pressure is practically hardly applied, and there is a tendency for poor adhesion. On the other hand, when it exceeds 10 seconds, productivity tends to decrease.
- 0.1 to:! OMPa per area of the adherend of the adhesive layer is preferable.
- the supporting substrate can be removed and the adherend can be adhered using heating and pressing in combination.
- the heating temperature is not particularly limited, but a temperature of 100 to 250 ° C is preferred.
- the pressure is not particularly limited as long as it does not damage the adherend, but generally 0.:! To lOMPa is preferred.
- These heating and pressurization are preferably performed in the range of 0.5 seconds to 120 seconds.
- the adhesive layer and the adherend can be bonded by heating and pressing for 10 seconds under conditions of a temperature of 140 to 200 ° C. and a pressure of 3 MPa.
- the adhesive sheet of the present embodiment is a circuit connection for connecting different types of adherends, for example, chip components such as semiconductor chips, resistor chips, capacitor chips, and circuit members such as printed boards. Can be used as material. Specifically, in addition to the circuit connection materials described above and below, which are typified by anisotropic conductive films, semiconductor elements typified by CSP elastomers, CSP underfilm materials, L0C tapes, etc. It can be used as an adhesive material. [0073] (Circuit member connection structure)
- FIG. 1 is a schematic cross-sectional view showing an embodiment of a circuit member connection structure of the present invention.
- the circuit member connection structure 1 of the present embodiment includes a first circuit member 20 and a second circuit member 30 that face each other. Between the two circuit members 30, there is provided a circuit connection member 10 for electrically connecting them.
- the first circuit member 20 includes a first circuit board 21 and a first circuit electrode 22 formed on the main surface 21 a of the circuit board 21. Note that an insulating layer (not shown) may be formed on the main surface 21a of the circuit board 21 in some cases.
- the second circuit member 30 includes a second circuit board 31 and a second circuit electrode 32 formed on the main surface 31a of the second circuit board 31.
- an insulating layer (not shown) may be formed on the main surface 31a of the circuit board 31 in some cases.
- the first circuit member 20 and the second circuit member 30 are not particularly limited as long as electrodes that require electrical connection are formed. Specific examples include glass or plastic substrates with electrodes formed of ITO or the like used for liquid crystal displays, printed wiring boards, ceramic wiring boards, flexible wiring boards, semiconductor silicon chips, etc., which are necessary. They can be used in combination. Thus, in this embodiment, in addition to materials made of organic materials such as printed wiring boards and polyimide, metals such as copper and aluminum, ITO (indium tin oxide), nitride nitride (SiN), and silicon dioxide (SiO 2). None
- Circuit members with various surface conditions such as machine materials can be used.
- the circuit connecting member 10 contains an insulating material 11 and conductive particles 7.
- the conductive particles 7 are disposed not only between the first circuit electrode 22 and the second circuit electrode 32 facing each other, but also between the main surfaces 21a and 31a.
- the first circuit electrode 22 and the second circuit electrode 32 are electrically connected through the conductive particles 7. For this reason, the connection resistance between the first circuit electrode 22 and the second circuit electrode 32 is sufficiently reduced. Therefore, the flow of current between the first circuit electrode 22 and the second circuit electrode 32 can be made smooth, and the functions of the circuit can be fully exhibited. Further, by making the conductive particles 7 have the above-mentioned blending ratio, the electrical connection is anisotropic. It is also possible to show sex.
- FIG. 2 is a schematic cross-sectional view showing an embodiment of a circuit member connection structure according to the present invention.
- the circuit member connection structure 2 of the present embodiment includes a first circuit member 20 and a second circuit member 30 that face each other. Between the two circuit members 30, a circuit connection member 15 for connecting them is provided.
- the first circuit member 20 includes a first circuit board 21 and a first circuit electrode 22 formed on the main surface 21 a of the circuit board 21. Note that an insulating layer (not shown) may be formed on the main surface 21a of the circuit board 21 in some cases.
- the second circuit member 30 includes a second circuit board 31 and a second circuit electrode 32 formed on the main surface 31a of the second circuit board 31.
- an insulating layer (not shown) may be formed on the main surface 31a of the circuit board 31 in some cases.
- the circuit connecting member 15 contains the insulating material 11 but does not contain the conductive particles 7. For this reason, the first circuit electrode 22 and the second circuit electrode 32 are electrically connected by bringing them into direct contact or sufficiently close so that a desired amount of current flows. At this time, by adjusting the position between the first circuit electrode 22 and the second circuit electrode 32, it is possible to show the anisotropy of the electrical connection.
- the circuit connecting members 10 and 15 include a cured product of the adhesive layer in the adhesive sheet of the present invention. Therefore, it is possible to sufficiently prevent part of the circuit connecting members 10 and 15 from being peeled off and part of the supporting substrate 45 remaining. Thereby, the adhesive strength of the circuit connecting members 10 and 15 to the first circuit member 20 or the second circuit member 30 can be sufficiently increased. Therefore, electrical connection between the first circuit electrode 22 and the second circuit electrode 32 is possible.
- an adhesive sheet is prepared in which the first circuit member 20 and the film-like circuit connecting material 40 described above are provided on a support base 45 (see FIG. 3 (a)).
- the film-like circuit connecting material 40 is formed by forming a circuit connecting material into a film shape.
- the circuit connecting material contains an adhesive composition 5 and, if necessary, conductive particles 7.
- the adhesive composition 5 according to the present invention described above is used for the adhesive composition 5.
- the thickness of the film-like circuit connecting material 40 is preferably 7 to 28 ⁇ m.
- the thickness of the film-like circuit connecting material 40 is less than 7 x m, the circuit connecting material tends to be insufficiently filled between the circuit electrodes 22 and 32.
- it exceeds 28 x m the adhesive composition between the circuit electrodes 22 and 32 cannot be sufficiently removed, and it is difficult to ensure conduction between the circuit electrodes 22 and 32.
- the adhesive sheet is placed on the surface of the first circuit member 20 on which the circuit electrodes 22 are formed so that the film-like circuit connecting material 40 side faces the first circuit member 20. .
- the film-like circuit connecting material 40 is film-like and easy to handle. Therefore, the film-like circuit connecting material 40 can be easily interposed between the first circuit member 20 and the second circuit member 30, and the first circuit member 20 and the second circuit member 30 Can be easily connected.
- the adhesive sheet is pressed in the directions of arrows ⁇ and ⁇ in FIG. 3A to temporarily fix the film-like circuit connecting material 40 to the first circuit member 20.
- the heating temperature is a temperature at which the adhesive composition in the film-like circuit connecting material 40 is not cured, that is, a temperature lower than the temperature at which the radical polymerization initiator generates radicals.
- the supporting substrate 45 is peeled from the film-like circuit connecting material 40 (see FIG. 3 (b)).
- the support base 45 may be peeled off without part or all of the film-like circuit connection material 40 being peeled off from the substrate or part of the support base 45 remaining. it can.
- the second circuit member 30 is placed on the film-like circuit connection material 40 so that the second circuit electrode faces the first circuit member 20. Put it on.
- the film-like circuit connecting material 40 is heated through the first and second circuit members 20 and 30 in the directions of arrows A and B in FIG.
- the heating temperature at this time is The temperature is such that the cal polymerization initiator can generate radicals.
- radicals are generated in the radical polymerization initiator, and polymerization of the radical polymerizable compound is started.
- the film-like circuit connecting material 40 is cured, and this connection is made, so that a circuit member connection structure as shown in FIG. 1 is obtained.
- the heating temperature is, for example, 90 to 200 ° C, and the connection time is, for example, 1 second to 10 minutes. These conditions are appropriately selected depending on the intended use, the adhesive composition, and the circuit member, and may be post-cured as necessary.
- the conductive particles 7 can be brought into contact with both the opposing circuit electrodes 22 and 32 in the resulting circuit member connection structure.
- the connection resistance between the circuit electrodes 22 and 32 can be sufficiently reduced.
- the adhesive composition 5 is cured and becomes the insulating substance 11 in a state where the distance between the circuit electrode 22 and the circuit electrode 32 is sufficiently small.
- the one circuit member 20 and the second circuit member 30 are firmly connected via the circuit connection member 10. That is, in the obtained circuit member connection structure, the circuit connection member 10 is constituted by a cured product of the circuit connection material containing the adhesive composition. Therefore, it is possible to sufficiently prevent part of the circuit connecting member 10 from being peeled off and part of the supporting base material 45 remaining. As a result, the adhesive strength of the circuit connecting member 10 to the circuit member 20 or 30 is sufficiently high, and the connection resistance between the circuit electrodes 22 and 32 can be sufficiently reduced.
- the adhesive composition 5 may include at least a radical polymerization initiator that generates radicals upon heating. Instead of this radical polymerization initiator, radical polymerization that generates radicals only by light irradiation is initiated.
- An agent may be used. In this case, when the film-like circuit connecting material 40 is cured, light irradiation may be performed instead of heating.
- a radical polymerization initiator that generates radicals by ultrasonic waves, electromagnetic waves, or the like may be used as necessary.
- an epoxy resin and a latent curing agent may be used as the curable component in the adhesive composition 5.
- conductive particles 7 instead of the conductive particles 7, other conductive materials may be used.
- Other conductive materials include particulate or short fiber carbon, Au-plated metal wires such as Ni wire, etc. It is done.
- the film-like circuit connecting material 40 is composed of the adhesive layer in the adhesive sheet of the present invention, the force for temporarily fixing the film-like circuit connecting material 40 on the substrate under a wider range of temperature conditions than before. It becomes possible. Therefore, when the support base 45 is peeled off after temporary fixing, the film-like circuit connection material 40 is peeled off from the substrate together with the support base 45, or a part of the film-like circuit connection material 40 is peeled off. Further, it is sufficiently prevented that a part of the support base material 45 remains. As a result, the process margin when manufacturing the connection structure of the circuit connection member using the film-like circuit connection material 40 is widened, and it is possible to improve the production yield. In addition, when the circuit connecting material does not contain the conductive particles 7, the connection structure obtained by this manufacturing method is as shown in FIG.
- FIG. 4 is a schematic sectional view showing an embodiment of the semiconductor device of the present invention.
- the semiconductor device 3 of the present embodiment includes a semiconductor element 50 and a substrate 60 that serves as a semiconductor support member, and the semiconductor device 50 and the substrate 60 are electrically connected to each other.
- a semiconductor element connection member 80 is provided for connection.
- the semiconductor element connection member 80 is laminated on the main surface 60a of the substrate 60, and the semiconductor element 50 is further laminated on the semiconductor element connection member 80.
- the substrate 60 includes a circuit pattern 61.
- the circuit pattern 61 is electrically connected to the semiconductor element 50 via the semiconductor connection member 80 on the main surface 60a of the substrate 60 or directly. Then, these are sealed with a sealing material 70 to form the semiconductor device 3.
- the material of the semiconductor element 50 is not particularly limited, but silicon, germanium group 14 semiconductor element, GaAs, InP, GaP, InGaAs, InGaAsP, AlGaAs, InAs, GaInP, AlInP, AlGaInP, GaNAs, GaNP, GaInNAs , GaInNP, GaSb, InSb, GaN, A1N, InGaN, InNAsP and other 13-15 compound semiconductor devices, HgTe, HgCdTe, CdMnTe, CdS, CdSe, MgSe, MgS, ZnSe, ZeTe, etc.
- Various compounds such as compound semiconductor devices and CuInSe (CIS) can be used.
- the semiconductor element connecting member 80 contains the insulating material 11 and the conductive particles 7.
- the conductive particles 7 are not only between the semiconductor element 50 and the circuit pattern 61 but also between the semiconductor element 50 and the circuit pattern 61. It is also arranged between the main surface 60a.
- the semiconductor element 50 and the circuit pattern 61 are electrically connected via the conductive particles 7. For this reason, the connection resistance between the semiconductor element 50 and the circuit pattern 61 is sufficiently reduced. Therefore, the current flow between the semiconductor element 50 and the circuit pattern 61 can be made smooth, and the functions of the semiconductor can be fully exhibited.
- it is also possible to show the anisotropy of electrical connection by setting the conductive particles 7 to the above-described mixing ratio.
- the semiconductor element connecting member 80 contains the conductive particles 7 (not shown), a desired amount of current flows through the semiconductor element 50 and the circuit pattern 61. It is electrically connected by direct contact with or close enough.
- the semiconductor element connecting member 80 is constituted by a cured product of the adhesive layer in the adhesive sheet of the present invention. Therefore, it is sufficiently prevented that a part of the semiconductor element connecting member 80 is peeled off and a part of the supporting base material 45 remains. Thereby, the adhesive strength of the semiconductor element connection member 80 to the semiconductor element 50 and the substrate 60 is sufficiently increased. Therefore, electrical connection between the semiconductor element 50 and the circuit pattern 61 becomes possible.
- a layer made of nickel having a thickness of 0.2 zm was provided on the surface of the polystyrene particles, and a layer made of gold having a thickness of 0.02 / im was further provided on the surface of the layer made of nickel.
- conductive particles having an average particle diameter of 4 / m and a specific gravity of 2.5 were obtained.
- Phenoxy resin weight average molecular weight 45000, manufactured by Union Carbide, trade name “PKH C ”) 30 parts by mass, 20 parts by mass of bifunctional epoxy resin (Dainippon Ink, trade name“ HP-4043D ”), silane coupling agent (Shin-Etsu Silicone, trade name“ SH6040 ”) 1 part by mass Silica filler (manufactured by Admatics, trade name “SE2050, average particle size 0 ⁇ 4 to 0 ⁇ 6 ⁇ ⁇ ) 5 parts by mass and imidazole epoxy adduct microcapsule (made by Asahi Kasei Corporation, trade name“ Novaquia 3941 ⁇ ” ) 35 parts by mass, and further 25 parts by mass of toluene and 25 parts by mass of ethyl acetate were added and mixed by stirring to obtain an adhesive composition (I).
- PSH C weight average molecular weight 45000, manufactured by Union Carbide, trade name “PKH C ” 30 parts by mass, 20 parts by
- Adhesive composition (I) 10 parts by volume of the conductive particles were added to 100 parts by volume, and the mixture was stirred and mixed to obtain adhesive composition (II).
- Adhesive composition (IV) was obtained by adding 10 parts by volume of the conductive particles to 100 parts by volume of adhesive composition (III) and stirring and mixing them.
- PET film film thickness 25 xm, surface treatment with silicone, manufactured by Teijin DuPont Films, trade name “Purex A70”) for each adhesive composition (I) to (VI) It was applied on top and heated at 70 ° C for 10 minutes to volatilize and remove the solvent, and an adhesive layer having a thickness of 10 xm was formed on the PET film.
- a PET film thickness 19 zm, surface treatment with silicone, Teijin DuPont Finolem Co., Ltd., trade name “Purex A31” is placed on the adhesive layer as a protective film, and the roll temperature is 40.
- C, linear pressure of 1 ⁇ 10 4 N / m, and lamination at a speed of lmZ were performed to prepare adhesive sheets.
- Each of the adhesive compositions (I) to (VI) is coated on a PET film (thickness 25 ⁇ m, surface treatment with silicone, product name “Purex A70”, manufactured by Teijin DuPont Films Ltd.), which is a support substrate. Then, it was heated at 70 ° C. for 10 minutes to volatilize and remove the solvent, and an adhesive layer having a thickness of 12 ⁇ ⁇ was formed on the P ⁇ film.
- a polyethylene ( ⁇ ) film film thickness 20 ⁇ , Tamapoly, trade name “NF-13” is placed on the adhesive layer as a protective film, roll temperature 40 ° C, linear pressure 1 X 10 4 Laminated at N / m, speed lm / min, and made each adhesive sheet
- Adhesive compositions (I) to (VI) are each applied to a PET film (film thickness 38 ⁇ m, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina CTR-4”) as a support substrate It was applied and heated at 70 ° C for 10 minutes to volatilize and remove the solvent, and an adhesive layer with a thickness of 20 zm was formed on the PET film.
- a PET film film thickness 38 ⁇ m, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina CTR-4”
- a PET film (film thickness 25 ⁇ m, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD”) is placed on the adhesive layer as a protective film, roll temperature 40 ° C, linear pressure 1 Laminated at 10 4 N / m and speed lm / min to prepare adhesive sheets.
- Each of the adhesive compositions (I) to (VI) is a PET film (film thickness 38 ⁇ m, Surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Binner CTR-4”), heated at 70 ° C for 10 minutes to volatilize and remove solvent, etc. to form a 23 / m thick adhesive layer It was formed on a PET film.
- PET protective film film thickness 25 / im, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD” is placed on the adhesive layer as a protective film, roll temperature 40 ° C, linear pressure 1 Laminated at 10 4 N / m and speed lm / min to prepare adhesive sheets.
- Each of the adhesive compositions (I) to (VI) is applied onto a PET film (film thickness 40 ⁇ m, surface treatment with alkyl alkyd, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina NSC”) as a support substrate. Then, it was heated at 70 ° C. for 10 minutes to volatilize and remove the solvent, and an adhesive layer having a thickness of 20 ⁇ m was formed on the PET film.
- a PET film film thickness 40 ⁇ m, surface treatment with alkyl alkyd, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina NSC”
- a PET film film thickness 25 ⁇ m, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD”
- a protective film roll temperature 40 ° C
- linear pressure 1 Adhesive sheets were prepared by laminating at 10 4 N / m and a speed of lm / min.
- Each of the adhesive compositions (I) to (VI) was applied onto an oriented polypropylene (OPP) film (film thickness: 40 ⁇ m, manufactured by Toyobo Co., Ltd., trade name “Pyrene Film P2002”) as a support substrate, The mixture was heated at 70 ° C for 10 minutes to volatilize and remove the solvent, and an adhesive layer with a thickness of 23 / m was formed on the PET film.
- OPP oriented polypropylene
- PET Finolem film thickness 25 m, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD”
- film thickness 25 m surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD”
- roll temperature 40 ° C linear pressure 1 X 10 4 N / m was laminated at a speed of lm / min to produce adhesive sheets.
- Each of the adhesive compositions (I) to (VI) was applied onto a polyethylene (PE) film (film thickness: 40 zm, manufactured by Tamapoly Co., Ltd., trade name “NF-13”) as a supporting substrate, and 70 ° C. Was heated for 10 minutes to volatilize and remove the solvent, and an adhesive layer having a thickness of 23 zm was formed on the PET film.
- PE polyethylene
- PET protective film film thickness 25 zm, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD”
- film thickness 25 zm, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD” is placed on the adhesive layer as a protective film
- roll temperature 40 ° C is placed on the adhesive layer as a protective film
- Adhesive sheets were prepared by laminating at X 10 4 N / m and a speed of lm / min.
- Each of the adhesive compositions (I) to (VI) is coated on a PET film (thickness 25 ⁇ m, surface treatment with silicone, product name “Purex A70”, manufactured by Teijin DuPont Films Ltd.), which is a support substrate. Then, it was heated at 70 ° C. for 10 minutes to volatilize and remove the solvent, and an adhesive layer having a film thickness of 17 ⁇ m was formed on the PET film.
- a PET film (film thickness 19 zm, surface treatment with silicone, manufactured by Teijin DuPont Films, trade name “Purex A31”) is placed on the adhesive layer as a protective film, roll temperature 40 ° C, linear pressure 1 Adhesive sheets were prepared by laminating at 10 4 N / m and a speed of lm / min.
- Adhesive compositions (I) to (VI) are each applied to a PET film (film thickness of 40 ⁇ m, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina CTR-2”), which is a support substrate. It was applied and heated at 70 ° C for 10 minutes to volatilize and remove the solvent, and an adhesive layer with a thickness of 40 / m was formed on the PET film.
- PET protective film film thickness 25 / im, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD” is placed on the adhesive layer as a protective film, roll temperature 40 ° C, linear pressure 1 Laminated at 10 4 N / m and speed lm / min to prepare adhesive sheets.
- Adhesive compositions (I) to (VI) are each applied to a PET film (film thickness: 100 ⁇ m, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina CTR-2”) as a support substrate It was applied and heated at 70 ° C for 10 minutes to volatilize and remove the solvent, and an adhesive layer with a film thickness of 45 / m was formed on the PET film.
- a PET film (film thickness 25 zm, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD”) is placed on the adhesive layer as a protective film, roll temperature 40 ° C, linear pressure 1 X 10 4 NZm, laminated at a speed of lmZ for each adhesive sheet.
- Adhesive compositions (I) to (VI) are each applied to a PET film (film thickness: 100 ⁇ m, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina CTR-2”) as a support substrate Painting
- the film was heated and heated at 70 ° C for 10 minutes to volatilize and remove the solvent, and an adhesive layer with a film thickness of 65 / m was formed on the PET film.
- a PET film (film thickness 25 / m, surface treatment with silicone, manufactured by Fujimori Kogyo Co., Ltd., trade name “Film Vina BD”) is placed on the adhesive layer as a protective film, roll temperature 40 ° C, linear pressure 1 Adhesive sheets were prepared by laminating at 10 4 NZm and a speed of lmZ.
- a glass substrate (Cowing # 7059, outer shape 38 mm X 28 mm rectangle, thickness 0.7 mm) having a wiring pattern of X (indium tin oxide) was prepared. Moreover, the protective film was peeled off in advance from the adhesive sheets prepared in Examples:! To 6 and Comparative Examples 1 to 3.
- the adhesive sheet was cut into a width of 2.5 mm and a length of 20 mm, and the adhesive sheet was placed on the glass substrate so that the adhesive layer was in contact with the ITO wiring surface to obtain a laminate.
- a metal crimping head (5 mm ⁇ 30 mm) containing a metal stage and a heater, the laminate was heated and pressed in the laminating direction for temporary fixing. The heating temperature at this time was 80 ° C or 30 ° C as the temperature in the adhesive layer, the pressing time was 2 seconds, and the pressing pressure was IMPa.
- the support substrate was peeled off, and the temporarily fixed state of the adhesive layer was evaluated according to the following criteria.
- the supporting substrate was peeled off at a peeling angle of 90 ° and a peeling speed of 100 mm / min.
- Table 2 shows the results when the heating temperature during temporary fixing is 80 ° C
- Table 3 shows the results when it is 30 ° C.
- Evaluation 1 since the adhesive layer was peeled and removed from the substrate, if the adhesion failure at the edge of the adhesive layer could not be confirmed in Evaluation 2, it was indicated by “-”.
- an adhesive comprising a supporting substrate and an adhesive composition provided on the supporting substrate.
- an adhesive sheet capable of temporarily fixing the adhesive layer on the substrate under a wider range of temperature conditions than before can be provided.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007800166522A CN101437914B (zh) | 2006-05-09 | 2007-05-08 | 粘接片、使用其的电路构件的连接结构及半导体器件 |
JP2007533800A JP4905352B2 (ja) | 2006-05-09 | 2007-05-08 | 接着シート、これを用いた回路部材の接続構造及び半導体装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006130160 | 2006-05-09 | ||
JP2006-130160 | 2006-05-09 | ||
JP2006282831 | 2006-10-17 | ||
JP2006-282831 | 2006-10-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007129711A1 true WO2007129711A1 (ja) | 2007-11-15 |
Family
ID=38667820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/059520 WO2007129711A1 (ja) | 2006-05-09 | 2007-05-08 | 接着シート、これを用いた回路部材の接続構造及び半導体装置 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP4905352B2 (ja) |
KR (1) | KR101081263B1 (ja) |
CN (2) | CN102942881B (ja) |
TW (1) | TW200811262A (ja) |
WO (1) | WO2007129711A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011140617A (ja) * | 2009-12-07 | 2011-07-21 | Hitachi Chem Co Ltd | アンダーフィル形成用接着剤組成物、アンダーフィル形成用接着剤シート及び半導体装置の製造方法 |
JP2012038975A (ja) * | 2010-08-09 | 2012-02-23 | Hitachi Chem Co Ltd | 回路部材接続用接着剤、回路部材接続用接着剤シート、半導体装置及び半導体装置の製造方法 |
JP2014043586A (ja) * | 2009-03-03 | 2014-03-13 | Toray Advanced Materials Korea Inc | 電子部品製造用粘着テープ |
JP2015096603A (ja) * | 2013-10-09 | 2015-05-21 | 日立化成株式会社 | 回路接続材料、回路部材の接続構造体、及び回路部材の接続構造体の製造方法 |
JP2017041499A (ja) * | 2015-08-18 | 2017-02-23 | 日立化成株式会社 | 半導体用接着剤、並びに、半導体装置及びその製造方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102947390B (zh) * | 2010-06-22 | 2018-06-22 | 住友电木株式会社 | 用于形成构成金属基底基板的树脂层的树脂组合物、金属基底基板以及金属基底基板的制造方法 |
JP6196893B2 (ja) * | 2012-12-18 | 2017-09-13 | 新光電気工業株式会社 | 半導体装置の製造方法 |
KR102545861B1 (ko) * | 2014-10-29 | 2023-06-21 | 데쿠세리아루즈 가부시키가이샤 | 도전 재료 |
JP6555277B2 (ja) * | 2014-12-05 | 2019-08-07 | 日立化成株式会社 | 半導体用接着剤、並びに、半導体装置及びその製造方法 |
JP6915544B2 (ja) * | 2015-11-04 | 2021-08-04 | 昭和電工マテリアルズ株式会社 | 接着剤組成物及び構造体 |
KR101715818B1 (ko) * | 2016-05-27 | 2017-03-13 | (주)티엠에스 | 점착시트의 제조 방법 |
KR102325406B1 (ko) * | 2017-04-05 | 2021-11-12 | 주식회사 아모센스 | 다층 인쇄회로기판용 베이스 기재 및 다층 인쇄회로기판 제조방법 |
CN110521292B (zh) | 2017-04-05 | 2022-06-17 | 阿莫善斯有限公司 | 印刷电路板及其制造方法 |
JP6490850B1 (ja) * | 2018-03-02 | 2019-03-27 | 株式会社有沢製作所 | プリプレグ及びプリプレグ成形品の製造方法 |
CN113136145B (zh) * | 2020-01-17 | 2023-04-07 | 广东生益科技股份有限公司 | 一种绝缘树脂片及其使用方法、包含其的印制电路板和应用 |
CN113141702A (zh) * | 2020-01-17 | 2021-07-20 | 广东生益科技股份有限公司 | 一种绝缘片、包含其的印制电路板、半导体装置和埋入式元器件 |
CN112071922B (zh) * | 2020-09-09 | 2022-05-10 | 西安宏星电子浆料科技股份有限公司 | 一种太阳能正银栅线的网印方法 |
JPWO2023276889A1 (ja) * | 2021-07-01 | 2023-01-05 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11241050A (ja) * | 1998-02-26 | 1999-09-07 | Hitachi Chem Co Ltd | 回路接続用フィルム状接着剤、回路板及びicカード |
JP2002370315A (ja) * | 2001-06-14 | 2002-12-24 | Sony Chem Corp | 剥離フィルム及び剥離フィルムを用いた接着フィルム |
JP2004186280A (ja) * | 2002-11-29 | 2004-07-02 | Sekisui Chem Co Ltd | ウエハ貼着用粘着シート及び半導体装置の製造方法 |
JP2004231932A (ja) * | 2002-12-02 | 2004-08-19 | Nitto Denko Corp | 接着剤組成物、接着フィルムおよびこれを用いた半導体装置 |
JP2005209936A (ja) * | 2004-01-23 | 2005-08-04 | Nitto Denko Corp | 半導体装置の製造方法及びこれに用いる耐熱性粘着テープ |
JP2005350650A (ja) * | 2004-05-14 | 2005-12-22 | Nitto Denko Corp | 剥離ライナー及びそれを用いた感圧性接着テープ又はシート |
JP2006176712A (ja) * | 2004-12-24 | 2006-07-06 | Furukawa Electric Co Ltd:The | 粘着テープ |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002097439A (ja) * | 2000-09-21 | 2002-04-02 | Hitachi Chem Co Ltd | 接着剤組成物、回路接続材料、回路接続用接着剤組成物、接続体及び半導体装置 |
JP2003197033A (ja) * | 2001-12-27 | 2003-07-11 | Hitachi Chem Co Ltd | 異方導電性接着剤及び回路板 |
JP2004356368A (ja) * | 2003-05-29 | 2004-12-16 | Toray Ind Inc | 半導体用接着剤付きテープおよびそれを用いた銅張り積層板、半導体集積回路接続用基板ならびに半導体装置 |
JP2004356369A (ja) * | 2003-05-29 | 2004-12-16 | Toray Ind Inc | 半導体用接着剤付きテープおよびそれを用いた半導体用接続用基板の製造方法 |
JP4272471B2 (ja) * | 2003-06-19 | 2009-06-03 | 三井化学株式会社 | フィルム状接着剤 |
JP4720073B2 (ja) * | 2003-08-07 | 2011-07-13 | 日立化成工業株式会社 | 接着剤組成物、回路接続用接着剤組成物、接続体及び半導体装置 |
JP4907840B2 (ja) * | 2003-11-12 | 2012-04-04 | 日立化成工業株式会社 | 異方導電フィルム及びこれを用いた回路板 |
JP4945881B2 (ja) * | 2004-01-23 | 2012-06-06 | 日立化成工業株式会社 | 回路接続用支持体付接着剤、及びそれを用いた回路接続構造体 |
JP3958297B2 (ja) * | 2004-03-24 | 2007-08-15 | 住友ベークライト株式会社 | ダイシングシート機能付き半導体用接着フィルム、それを用いた半導体装置の製造方法及び半導体装置 |
JP2005277135A (ja) * | 2004-03-25 | 2005-10-06 | Toray Ind Inc | 半導体用接着剤組成物およびそれを用いた半導体用接着剤シート、半導体集積回路接続用基板、半導体装置 |
JP2005320455A (ja) * | 2004-05-10 | 2005-11-17 | Hitachi Chem Co Ltd | 接着剤組成物、回路接続材料、回路部材の接続構造及び半導体装置 |
CN100345678C (zh) * | 2004-05-14 | 2007-10-31 | 日东电工株式会社 | 剥离衬及使用它的压敏性粘接带或片 |
TWI387631B (zh) * | 2004-05-18 | 2013-03-01 | Hitachi Chemical Co Ltd | 黏著片與使用此黏著片之半導體裝置以及其製造方法 |
JP4333498B2 (ja) * | 2004-06-25 | 2009-09-16 | ソニーケミカル&インフォメーションデバイス株式会社 | 接続材料 |
JP4604577B2 (ja) * | 2004-07-05 | 2011-01-05 | 日立化成工業株式会社 | 接着剤組成物、それを用いたフィルム状接着剤及び回路接続材料、並びに回路部材の接続構造及びその製造方法 |
JP5236144B2 (ja) * | 2004-08-09 | 2013-07-17 | 日立化成株式会社 | 接着剤組成物、回路接続構造体及び半導体装置 |
-
2007
- 2007-05-08 JP JP2007533800A patent/JP4905352B2/ja active Active
- 2007-05-08 CN CN201210421106.XA patent/CN102942881B/zh active Active
- 2007-05-08 KR KR1020087029928A patent/KR101081263B1/ko active IP Right Grant
- 2007-05-08 WO PCT/JP2007/059520 patent/WO2007129711A1/ja active Application Filing
- 2007-05-08 CN CN2007800166522A patent/CN101437914B/zh active Active
- 2007-05-09 TW TW096116513A patent/TW200811262A/zh unknown
-
2011
- 2011-07-04 JP JP2011148570A patent/JP2011256391A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11241050A (ja) * | 1998-02-26 | 1999-09-07 | Hitachi Chem Co Ltd | 回路接続用フィルム状接着剤、回路板及びicカード |
JP2002370315A (ja) * | 2001-06-14 | 2002-12-24 | Sony Chem Corp | 剥離フィルム及び剥離フィルムを用いた接着フィルム |
JP2004186280A (ja) * | 2002-11-29 | 2004-07-02 | Sekisui Chem Co Ltd | ウエハ貼着用粘着シート及び半導体装置の製造方法 |
JP2004231932A (ja) * | 2002-12-02 | 2004-08-19 | Nitto Denko Corp | 接着剤組成物、接着フィルムおよびこれを用いた半導体装置 |
JP2005209936A (ja) * | 2004-01-23 | 2005-08-04 | Nitto Denko Corp | 半導体装置の製造方法及びこれに用いる耐熱性粘着テープ |
JP2005350650A (ja) * | 2004-05-14 | 2005-12-22 | Nitto Denko Corp | 剥離ライナー及びそれを用いた感圧性接着テープ又はシート |
JP2006176712A (ja) * | 2004-12-24 | 2006-07-06 | Furukawa Electric Co Ltd:The | 粘着テープ |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014043586A (ja) * | 2009-03-03 | 2014-03-13 | Toray Advanced Materials Korea Inc | 電子部品製造用粘着テープ |
US9090800B2 (en) | 2009-03-03 | 2015-07-28 | Toray Advanced Materials Korea, Inc. | Adhesive tape for manufacturing electronic components |
JP2011140617A (ja) * | 2009-12-07 | 2011-07-21 | Hitachi Chem Co Ltd | アンダーフィル形成用接着剤組成物、アンダーフィル形成用接着剤シート及び半導体装置の製造方法 |
JP2012038975A (ja) * | 2010-08-09 | 2012-02-23 | Hitachi Chem Co Ltd | 回路部材接続用接着剤、回路部材接続用接着剤シート、半導体装置及び半導体装置の製造方法 |
JP2015096603A (ja) * | 2013-10-09 | 2015-05-21 | 日立化成株式会社 | 回路接続材料、回路部材の接続構造体、及び回路部材の接続構造体の製造方法 |
JP2017041499A (ja) * | 2015-08-18 | 2017-02-23 | 日立化成株式会社 | 半導体用接着剤、並びに、半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101437914A (zh) | 2009-05-20 |
KR101081263B1 (ko) | 2011-11-08 |
CN101437914B (zh) | 2012-12-12 |
TWI379876B (ja) | 2012-12-21 |
JP4905352B2 (ja) | 2012-03-28 |
KR20090010105A (ko) | 2009-01-28 |
TW200811262A (en) | 2008-03-01 |
CN102942881A (zh) | 2013-02-27 |
JPWO2007129711A1 (ja) | 2009-09-17 |
JP2011256391A (ja) | 2011-12-22 |
CN102942881B (zh) | 2015-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4905352B2 (ja) | 接着シート、これを用いた回路部材の接続構造及び半導体装置 | |
JP4466650B2 (ja) | フィルム状接着剤、フィルム状回路接続材、回路部材の接続方法及び半導体装置 | |
KR100698916B1 (ko) | 접착제 조성물, 회로접속재료, 회로부재의 접속구조체 및 반도체장치 | |
JP4862944B2 (ja) | 回路接続材料 | |
EP2180026A1 (en) | Adhesive composition, film-like adhesive, and connection structure for circuit member | |
US20100012358A1 (en) | Circuit connecting material, connection structure for circuit member using the same and production method thereof | |
JP2009170898A (ja) | 回路接続材料及び回路部材の接続構造 | |
JPWO2008053824A1 (ja) | 接着テープ及び接着テープ巻重体 | |
JP6045918B2 (ja) | 回路接続材料、回路接続部材の接続構造及び半導体装置 | |
KR20210134875A (ko) | 접착제 조성물 및 접속체 | |
JP5070748B2 (ja) | 接着剤組成物、回路接続材料、接続体及び半導体装置 | |
JP5298977B2 (ja) | 接着剤組成物、回路接続用接着剤、接続体及び半導体装置 | |
JP2008133411A (ja) | 電気接続用接着フィルム | |
JP2008112713A (ja) | 異方導電性フィルム、圧着方法 | |
JP4945881B2 (ja) | 回路接続用支持体付接着剤、及びそれを用いた回路接続構造体 | |
JP5061509B2 (ja) | 接着剤組成物並びにこれを用いた接続体及び半導体装置 | |
JP3937299B2 (ja) | 支持体つき接着剤及びそれを用いた回路接続構造体 | |
JP2011119154A (ja) | 接続方法及び接続構造体 | |
TWI734841B (zh) | 連接結構體、電路連接構件及接著劑組成物 | |
WO2022186016A1 (ja) | 回路接続用接着フィルム及び接続体 | |
JP2003332385A (ja) | 回路接続材料及びそれを用いた回路接続体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2007533800 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07742955 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200780016652.2 Country of ref document: CN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: KR |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07742955 Country of ref document: EP Kind code of ref document: A1 |