Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/36—Removing material
  • B23K26/40—Removing material taking account of the properties of the material involved
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
  • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
  • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2103/00—Materials to be soldered, welded or cut
  • B23K2103/50—Inorganic materials other than metals or composite materials
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
  • Y10T156/10—Methods of surface bonding and/or assembly therefor
  • Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
  • Y10T156/1092—All laminae planar and face to face
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
  • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
  • Y10T156/1168—Gripping and pulling work apart during delaminating
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
  • Y10T156/19—Delaminating means
  • Y10T156/195—Delaminating roller means
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49815—Disassembling
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49815—Disassembling
  • Y10T29/49819—Disassembling with conveying of work or disassembled work part
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/49—Method of mechanical manufacture
  • Y10T29/49815—Disassembling
  • Y10T29/49822—Disassembling by applying force
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/53—Means to assemble or disassemble
  • Y10T29/53683—Spreading parts apart or separating them from face to face engagement

Definitions

• the present invention relates to a film peeling method used for peeling a film affixed to the surface of a wafer 8, particularly a surface protective film, and a film peeling apparatus for carrying out this method.
• a chamfered portion is formed on the outer periphery of the wafer 8 to prevent dust generation, and the cross section at the wafer edge is narrower toward the tip.
• a tapered part is formed on the outer periphery of the WAY-8.
• Japanese Patent Laid-Open No. 2 0 00—— 1 7 3 9 6 1 discloses that a notch is formed at the boundary between the chamfered portion and the flat portion of the outer peripheral portion of We 18. Back the wafer until the thickness of the UA-8 is thinner than the depth of cut. Surface grinding is disclosed. In such a case, it is assumed that cracks or chips have occurred in the outer periphery of the wafer, and the progress of these cracks or chips stops at the cutting position. Therefore, it is possible to suppress the failure of the semiconductor element provided on the flat portion of Wee-8 (for example, see Japanese Patent Publication No. 2 0 0 0 — 1 7 3 9 6 1,
• Cited Document 1 can suppress cracking or chipping in the wafer during back grinding, when peeling the surface protective film after back grinding, the outer circumference of the wafer 8 Cracking or chipping may occur from the part.
• the present invention has been made in view of such circumstances, and can prevent the wafer 8 from being damaged when the film, particularly the surface protective film attached to the wafer surface is peeled off. It is an object of the present invention to provide a film peeling method and a film peeling apparatus for carrying out this method. Disclosure of the invention
• the film attached to the first part including the outer peripheral part of the wafer and the second part located inward of the first part is peeled off.
• the first portion and the second portion or the second portion of the wafer 8 are arranged such that the film of the first portion is above the film of the second portion.
• the HIJ is moved relative to the HIJ, and the peeling tape is fed out onto the film affixed to the first and second parts, and the peeling means is pressed only against the first part of the film through the peeling tape.
• a film peeling method in which the film is peeled from the first and second parts of the roof by moving the peeling means along the first part of the HU.
• the first part is positioned above the second part and the peeling means is pressed only against the first part via the peeling tape, so the load from the peeling means Will be applied only to the first part of the wafer, that is, the part including the outer periphery of the eighth. Since this first part is a part that will not be used in the future, even if a crack or chip occurs in the first part, the second part in which the semiconductor element is formed is not affected by the crack or chip. Therefore, in the first embodiment, the film can be peeled without damaging the second portion of the wafer 8 after back grinding.
• a groove is formed inside the outer periphery along the entire outer periphery of the u 8 on one surface of the u 8, and is formed on the one surface of the u 18 where the groove is formed.
• a film is affixed, and at least the bottom surface of the groove is ground until the bottom surface of the groove is reached, so that the wafer has a first portion including the outer peripheral portion and the first portion.
• the first portion is also divided into a second portion positioned inward, and the first portion film is positioned above the second portion film.
• a film peeling method is formed in which the film is peeled off from the first and second portions of the wafer 8.
• the first part in the second mode, the first part is positioned above the second part and the peeling means is pressed only against the first part via the peeling tape, so the load from the peeling means is It will only be applied to the first part of the weiha, that is, the part including the outer perimeter of the ue8. Since the first part is a part that will not be used in the future, even if a crack or chip occurs in the first part, the second part in which the semiconductor element is formed is not affected by the crack or chip. Therefore, in the third embodiment, the film can be peeled without damaging the first portion of the wafer 8 after back grinding.
• the film is pasted on one surface of the woo 8 and the surface opposite to the one surface of the ue 8 is ground, and the wa A groove is formed along the entire outer periphery of the eight until it reaches the one surface inside the outer periphery, so that the wafer is positioned inward of the first portion including the outer periphery and the first portion. And the first portion of the weft 18 and / or so that the film of the first portion is positioned above the film of the second portion.
• the second part is moved relatively, a peeling tape is fed out on the film stuck to the first and second parts, and the peeling means is pressed only against the film of the first part via the peeling tape.
• the peeling means is the First part A film peeling method is provided in which the film is peeled off from the first and second portions of the wafer 8 by moving along the direction.
• the surface of the wafer 8 is cracked off the cutting line, etc. i * s, and without melting the surface of the wafer 18 Grooves can be formed in.
• the groove is on or more than the boundary line between the chamfered portion and the flat portion of the wah 8. It is formed inside.
• the movement amount of the first part and / or the second part can be reduced in order to form a step that is large enough that the peeling means does not press the second part.
• the film peeling apparatus for peeling the film attached to the first part including the outer peripheral part of the web 18 and the first part located inward of the first part,
• Moving means for relatively moving the first part and the second part so that the film of the first part is positioned above the film of the second part; and
• a tape feeding means for feeding a peeling tape onto the affixed film, and pressing the peeling tape fed from the tape feeding means only against the film of the first part to move along the first part.
• a film stripping device is provided.
• the first part is positioned above the second part and the peeling means is pressed only against the first part via the peeling tape, so the load from the peeling means is It will be applied only to the first part of the UA-8, that is, the part including the outer periphery of the UA-8. Since this first part is a part that will not be used in the future, even if a crack or chip occurs in the first part, the second part in which the semiconductor element is formed is not affected by the crack or chip. Therefore, in the sixth embodiment, the film can be peeled without damaging the second portion of the wafer after the back grinding.
• the groove forming means for forming a groove on one surface of the wafer 18 along the entire outer periphery of the way 8 and inside the outer periphery, and the way 8 in which the groove is formed.
• a film affixing means for affixing a film on the one side of the wafer, and a grinding means for grinding a surface of the way 8 opposite to the one side until reaching the bottom of the groove.
• the wafer is divided into a first portion including the outer peripheral portion and a second portion located inward of the first portion. Further, the film of the first portion of the wafer 8 is the second portion.
• a film peeling apparatus comprising peeling means for peeling from the second portion.
• the first part is higher than the second part. Since the peeling means is pressed only against the first part via the peeling tape, the load from the peeling means is only applied to the first part of the UA-8, that is, the part including the outer periphery of the UA-8. It starts to hang. Since this first part is a part that will not be used in the future, even if a crack or chip occurs in the first part, the second part in which the semiconductor element is formed is not affected by the crack or chip. Therefore, in the seventh embodiment, the film can be peeled without damaging the second portion of the wafer 8 after back grinding.
• the crack or chip that proceeds from the outer periphery of the wafer 8 stops at the groove position. Therefore, it is possible to limit the occurrence of cracks or chips that may occur during back grinding to only the portion including the outer peripheral portion of the wafer 18, that is, the first portion.
• a film sticking means for sticking a film to one surface of the wah 8; a grinding means for grinding a surface of the wah 8 opposite to the one surface; And a groove forming means for forming a groove along the entire outer peripheral portion of the wafer 8 until reaching the one surface inside the outer peripheral portion, so that the wafer includes the outer peripheral portion.
• the film is divided into a part and a second part located inward of the first part, and the film of the first part of the wafer 8 is located above the film of the second part.
• Moving means for relatively moving the first part and the Z or the second part, and a tape feeding means for feeding a release tape onto the film affixed to the first and second parts, The tape
• the release means for separating the fill arm from said first and second portions of the Ue eight A film separating apparatus is provided.
• the groove is formed by forming a modified region inside the wafer by a laser.
• a groove is formed in the wafer 18 without causing cracks or the like on the surface of the wafer 8 to be out of the planned cutting line and without melting the surface of the wafer 8. Can do.
• the groove is on the boundary line between the chamfered portion and the flat portion of the way 8 or on the inner side of the boundary line. Is formed.
• the movement of the first part and Z or the second part can be reduced in order to form a step that is large enough that the peeling means does not press the second part.
• each aspect it is possible to achieve a common effect that it is possible to prevent the wafer from being damaged when the film attached to the surface of the wafer 18 is peeled off.
• the moving amount of the first part and / or the second part can be reduced.
• FIG. 1 is a schematic diagram showing a wafer processing apparatus according to the present invention.
• Figure 2 is a diagram showing We 18.
• FIG. 3 a is a diagram showing a dicing state in the previous dicing unit.
• Fig. 3b is a diagram showing the state of application of the surface protection film in the application unit.
• FIG. 4 is a side sectional view for explaining laser dicing.
• FIG. 5a is a schematic side view showing the state of back grinding in the back grinding unit.
• Figure 5b is a schematic side view showing the state of the way 8 after back grinding.
• FIG. 6 is a diagram for explaining the state of the way 8 in the peeling unit.
• FIG. 7 is a plan view of the holding table.
• FIG. 8 a is a first diagram for explaining the peeling action of the surface protective film in the peeling unit.
• FIG. 8 b is a second view for explaining the peeling action of the surface protective film in the peeling unit.
• FIG. 8 c is a third diagram for explaining the peeling action of the surface protective film in the peeling unit.
• Figure 9a shows another state of back grinding in the back grinding unit. It is a schematic side view.
• FIG. 9b is a schematic side view showing the state of the wafer 18 after back grinding in FIG. 9a.
• Fig. 9c is a schematic side view showing the state of a groove formed with grooves after back grinding. Best form for carrying out the invention
• FIG. 1 is a schematic diagram showing a wafer processing apparatus according to the present invention.
• Fig. 2 is a diagram showing UHA.
• a plurality of circuit patterns C are formed in a lattice pattern on the surface 21 of the wafer 20 in the previous step.
• all the circuit patterns C are formed on the flat portion 2 7 of the wafer 20.
• the outer periphery of X 8 20 located around 2 7 is formed as a chamfer 2 8. Note that such a circuit pattern C is not formed on the back surface 2 2 of the u X-eighth 20. Cough processing equipment shown in Fig. 1
• the wafer processing device 100 has a front dicing unit 1 5 0 that forms a groove or a cut in the surface 2 1 of the wafer 20, and a surface protection on the surface 2 1 of the wafer 20.
• Affixing unit 2 0 0 for attaching film 3 reverse unit ⁇ 3 0 0 for turning up and down 2 0, and back grinding unit 3 5 for grinding back 2 2 of 2 0 2 0 and UV irradiation unit 40 0 0 which irradiates the surface protection film 3 of the wafer 20 with ultraviolet (UV) and a peeling unit 5 0 0 which peels off the surface protection film 3 of the wafer 20 Including.
• U eight Between each unit of the processing device 100, a moving device such as a robot arm is used to move the wafer 20. However, since these are general devices, they are shown and described. Omitted.
• FIG. 3a is a diagram showing a dicing state in the previous dicing unit.
• wafer 20 is placed with surface 21 facing upward, and groove 25 is formed in surface 21 of wafer 20 by a relatively small dicing blade 15 Is done.
• the groove 25 is formed on the boundary line between the chamfered part 2 8 and the flat part 2 7 of the wafer 20, but the groove 25 is flatter than the boundary line. 2 It may be formed on the 7 side.
• An annular groove 25 is formed by relatively moving the dicing blade 15 1 along the entire outer periphery of the wafer 20. Note that the depth of the groove 25 shown in FIG. 3a is approximately half the thickness of the wafer 20, but the groove 25 may be shallower than this.
• the force that forms the groove 25 by the dicing blade 15 1 may be formed by another method.
• the groove 25 can be formed by a laser dicing apparatus.
• FIG. 4 is a side sectional view for explaining laser dicing.
• the laser V is irradiated from the laser source (not shown) to the surface 21 side of the wafer 20 via the condenser lens 85.
• the condensing point 8 4 is set to the side somewhat closer to the surface 2 1 inside the wafer 20.
• a modified region is formed around the condensing point 8 4.
• the band-shaped modified region 86 is Aha 2 0 comes to be formed inside.
• the laser 20 In laser dicing, the laser 20 is transmitted through the wafer 20 and multiphoton absorption is generated inside the wafer 20 to form a modified region. Therefore, in the surface 21 of the wafer 20, the laser V is hardly absorbed by the wafer 20, and as a result, the surface 21 of the wafer 20 does not melt, and the surface of the wafer 8 is scheduled to be cut. There is no breakage from the line.
• Fig. 3b is a diagram showing the state of application of the surface protective film 3 on the affixed unit.
• the surface protective film 3 is a web 2 in the affixed unit 200. Affixed to 0 surface 2 1.
• the surface protection film 3 plays a role of protecting the circuit pattern C formed on the surface 21 of the V. 20 20 in the post-knock process, which is a subsequent process.
• Inverter ⁇ 3 0 0 plays the role of inverting wafer 2 0.
• the surface 2 1 faces upward. Therefore, in the reversing unit 3 0 0, such a wafer 20 is turned upside down, and the surface 2 1 of the wafer 2 0 to which the surface protection film 3 is attached faces downward.
• the wafer 20 inverted in the inversion unit 30 0 is supplied to the back surface grinding unit 3 5 0 shown in FIG.
• Wafer 20 is supplied to back grinding unit 3 5 0 with back surface 2 2 facing upward.
• Fig. 5a is a schematic side view showing the state of back grinding in the back grinding unit.
• the surface 2 1 of the wafer 2 0 is adsorbed by an adsorption unit (not shown).
• the surface protective film 3 is adhered to the surface 21 of the wafer 20 in the affixing unit 20 0, the surface 2 1 of the wafer 20 is adsorbed. In other words, the circuit pattern C formed on the surface 21 is not damaged.
• the grinding part 8 1 is arranged on the back surface 2 2 of the wafer 8 20.
• the grinding part 8 1 reciprocates on the back surface 2 2 of the wafer 20 in the direction of the arrow.
• FIG. 5 which is a schematic side view showing the shape of the wafer 8 after back grinding, the back surface 2 2 of the wafer 20 is at least formed in the groove 25 by the grinding part 8 1. Grind until the bottom is reached
• the back surface may be ground beyond the bottom of the groove 25.
• the thickness of We 18 20 is the original thickness L
• the thickness is reduced from 0 to the thickness L 0 'after grinding, and the grinding part 8 1 stops.
• the wafer 2 0 is divided into an annular first part 1 2 1 including the outer periphery of the wafer 2 0 and a second part 1 2 2 positioned inside the first part 1 2 1. . If the groove 25 is formed on the boundary line xl between the chamfered portion 2 8 and the flat portion 2 7 (see FIG. 2), the first portion 1 2 1 is the wafer 2 This is a ring-shaped portion including the entire chamfered portion 28 of 0, and the second portion 1 2 2 is a portion including the entire flat portion 27.
• the chamfered portion 2 8 which is the outer periphery of the wafer 20, is small in thickness, if the back surface is ground beyond half the thickness of the wafer 8, the chamfered portion 28 will crack or chip, etc. May occur.
• the first part 1 2 1 is a part that will not be used in the future, and since a ring-shaped groove 25 located inside the chamfered part 28 is formed, the first part 1 2 1 is cracked or chipped. Even so, the progress of cracking or chipping stops in groove 25. In other words, in the present invention, such a crack or chipping is caused by the second portion 12 in which the circuit pattern C is formed.
• this dynosing tape 3 1 is fixed to a dicing frame 15 (see Fig. 1) supplied to back grinding unit 3 5 0.
• the dicing frame 15 played a role in facilitating the handling of the wafer 20 which was reduced in thickness by back grinding.
• the wafer 20 is returned from the back grinding unit 35 0 to the reversing unit 30 0 again.
• the wafer 20 is again turned upside down so that the surface 2 1 of the wafer 20 faces upward.
• the wafer 20 is supplied to the UV irradiation unit 400 along with the dicing frame 15.
• the surface protection film 3 is irradiated with a predetermined amount of ultraviolet rays by the UV lamp 49 0, and then the wafer 20 is supplied to the peeling unit 500.
• the UV irradiation unit 400 uses ultraviolet light to 20 Since it is not necessary to irradiate the line, wafer 20 is simply passed through UV irradiation unit 400.
• FIG. 6 is a diagram for explaining the state of the way 8 in the peeling unit.
• the peeling unit 50 0 is a holding table 6 1, 6 2 for holding the first part 1 2 1 and the second part 1 2 2 of the wafer 20, respectively.
• These holding tables 61 and 62 can move independently of each other perpendicularly to the holding surface.
• FIG. 7 is a plan view of the holding table. As can be seen from FIG. 7, these holding tables 6 1 and 6 2 have shapes corresponding to the first portion 1 2 1 and the second portion 1 2 2 of the wafer 20, respectively.
• a gap corresponding to the width of the groove 25 is formed between the holding tables 61, 62, but no gap is formed between the holding tables 61, 62. May be.
• the holding surfaces of these holding tables 61 and 62 are the same plane. Accordingly, the wafer 20 transferred to the peeling unit 50 0 has the first part 1 2 1 held by the holding table 6 1 and the second part 1 2 2 held by the holding table 6 2. These holding tables 6 1 and 6 2 hold them.
• the dicing frame 15 of the wafer 20 is not held, but is actually held appropriately by holding means (not shown) for the dicing frame 15. And Then, when the surface protective film 3 is peeled off, the holding means for the dicing frame 15 can be appropriately raised and lowered.
• the peeling unit 500 is provided with a peeling roller 14 46 that can be moved up and down and horizontally moved. Illustrated As shown in the figure, the length of the peeling roller 14 6 is larger than the diameter of the wafer 20. Further, the peeling tape 103 is fed from the tape feeding means 14 2. The release tape 10 3 is wound around a tape take-up means (not shown) via a release roller 1 46.
• FIG. 8a to 8c are diagrams for explaining the peeling action of the surface protective film in the peeling unit.
• the outer holding table 6 1 is not However, it rises and a step is formed between the holding table 6 1 and the holding table 6 2.
• the rising height of the holding table 6 1 at this time is small enough to prevent the surface protection film 3 and the dicing tape 3 1 from being torn off, but larger than the elastic deformation amount of the peeling roller 14 46 described later.
• first part 1 2 1 and the second part 1 2 2 of the wafer 20 are connected to each other by the surface protection film 3 and the dicing tape 3 1, they are protected when the holding table 6 1 is raised. Film 3 and dicing tape 3 1 will stretch by that amount.
• the peeling roller 1 46 when the peeling roller 1 46 is lowered, the second roller of the wafer 2 0 is passed through the peeling tape 1 0 3 so that the peeling roller 1 4 6 is slightly elastically deformed. Press 1 2 1 partly.
• the pressing position of the peeling roller 1 46 is preferably in the vicinity of the outer periphery of the first part 1 2 1, and the peeling roller 1 4 6 does not press the second part 1 2 2. Due to such a pressing action, the adhesive force between the peeling tape 10 3 and the surface protective film 3 at the pressed portion becomes the adhesion between the first portion 1 2 1 of the wafer 20 and the surface protective film 3. Greater than force.
• the adhesive force between the first part 1 2 1 and the dicing tape 3 1 is between the surface protection film 3 and the release tape 1 0 3. It is larger than the adhesive strength.
• the peeling roller 10 46 is wound up by the tape winding means (not shown) and the peeling roller 14 6 is moved to the wafer.
• the pressed portion described above functions as a peeling start point, that is, a trigger for peeling, and the surface protective film 3 is peeled from the first portion 1 2 1 of the wafer 20. Since the first part 1 2 1 and the second part 1 2 2 of the wafer 20 are connected by the surface protection film 3, when the peeling tape 1 0 3 is further wound, the second part 1 2 2 The surface protective film 3 is subsequently peeled off.
• the first part 1 2 1 of the wafer 20 is annular, and the peeling roller 1 46 is longer than the diameter of the wafer 20. Therefore, the surface protection film 3 of the second part 1 2 2 is peeled off. Even if this is done, the peeling roller 1 4 6 presses only the first part 1 2 1, and the peeling roller 1 4 6 does not press the second part 1 2 2. In the invention, the load from the peeling roller 1 46 is not applied to the second portion 1 2 2. Therefore, the pressing action of the peeling roller 1 46 does not cause the second part 1 2 2 of the wafer 8 2 to crack or chip. Therefore, in the present invention, since the circuit pattern C of the second portion 1 2 2 is not damaged, the yield of the semiconductor element finally formed can be improved.
• the wafer 2 0 from which the surface protection film 3 has been peeled off is removed from the peeling unit 5 0 0 together with the dicing frame 1 5. It is transported to the dicing machine 600 and a normal dicing process is performed.
• the groove 25 between the first part 1 2 1 and the second part 1 2 2 is formed between the flat part 2 7 and the chamfered part 2.8 of the wafer 20. It is formed on the boundary line X1.
• the groove 25 is preferably formed on the boundary line X 1 or on the inner side of the boundary line X 1.
• the separation can be performed only by slightly raising the first part 1 2 1. Steps large enough to prevent the roller 1 4 6 from pressing the second portion 1 2 2 can be easily formed. At this time, since the rising of the first portion 1 2 1 is relatively small, the possibility that the surface protection film 3 or the dicing tape 3 1 is torn off is reduced.
• Fig. 9a is another schematic side view showing the state of surface grinding in the back grinding unit
• Fig. 9b is a schematic side view showing the state of the wafer 18 after back grinding in Fig. 9a.
• FIG. 9c is a schematic side view showing the state of the wafer 8 in which a groove is formed after the back surface grinding.
• the back surface 2 2 of wafer 20 is ground until the thickness of wafer 20 reaches L 0 ′ after grinding from L 0 (FIG. 9 b). Thereafter, as shown in FIG. 9 c, a groove 25 is formed from the back surface 2 2 of the wafer 20 until it reaches the front surface 21.
• the holding table 6 2 is raised while the height of the force holding table 6 1 forming the step is maintained by raising the holding table 61.
• a similar step may be formed by lowering.

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• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Plasma & Fusion (AREA)
• Mechanical Engineering (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

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• 2006
  • 2006-07-05 TW TW095124566A patent/TW200719394A/zh not_active IP Right Cessation
  • 2006-07-05 WO PCT/JP2006/313807 patent/WO2007052387A1/ja not_active Ceased
  • 2006-07-05 US US12/084,473 patent/US8052824B2/en not_active Expired - Fee Related
  • 2006-07-05 KR KR1020087010639A patent/KR100983910B1/ko not_active Expired - Fee Related
  • 2006-07-05 EP EP06780977A patent/EP1947688A4/en not_active Withdrawn

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