WO2005075212A1 - 相変化型情報記録媒体及びその製造方法、スパッタリングターゲット、並びに相変化型情報記録媒体の使用方法及び光記録装置 - Google Patents
相変化型情報記録媒体及びその製造方法、スパッタリングターゲット、並びに相変化型情報記録媒体の使用方法及び光記録装置 Download PDFInfo
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- WO2005075212A1 WO2005075212A1 PCT/JP2004/011148 JP2004011148W WO2005075212A1 WO 2005075212 A1 WO2005075212 A1 WO 2005075212A1 JP 2004011148 W JP2004011148 W JP 2004011148W WO 2005075212 A1 WO2005075212 A1 WO 2005075212A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/268—Post-production operations, e.g. initialising phase-change recording layers, checking for defects
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
Definitions
- Phase change type information recording medium method for manufacturing the same, sputtering target, method for using phase change type information recording medium, and optical recording apparatus
- the present invention is capable of recording, reproducing, erasing, and / or rewriting information by irradiating a laser beam to cause an optical change in a material constituting a phase change recording layer.
- Phase change type information recording medium hereinafter sometimes referred to as "phase change type optical information recording medium”, “optical recording medium”, “optical information recording medium”, “information recording medium”
- the present invention relates to a method for manufacturing a medium, a sputtering target, a method for using a phase change type information recording medium, and an optical recording apparatus.
- phase change recording layer material used for DVD + RW an AglnSbTe-based material which has been conventionally used for CD-RW has been improved, and recording and erasing at high linear velocities has been improved. Some have made it possible.
- the AglnSbTe-based material used has a higher Sb content than the CD-RW compatible recording material in order to correspond to the recording speed in the high linear velocity recording area.
- a material having a high Sb composition ratio has a problem that the crystallization temperature is lowered although the crystallization speed is increased. It is known that a decrease in the crystallization temperature leads to a deterioration in storage reliability.
- the problem of the preservation reliability of a powerful phase-change type information recording medium is not a practical problem up to a DVD 4x medium due to the increase of Ag in the phase-change recording layer recording material or the addition of the fifth element such as Ge. It is suppressed to the extent.
- the amount of Sb is increased to achieve higher linear velocity recording, the crystallization temperature drops rapidly and the stability of the amorphous mark becomes very poor. From this, AglnSbTe material It is estimated that the practical use of the high-speed recording medium used is about 4 ⁇ DVD speed.
- GaSb-based materials are also being studied as materials for high-speed recording at 4x speed or higher.
- This Ga Sb-based material enables high-speed recording and at the same time has excellent storage reliability.
- the GaSb-based material has a high melting point of 600 ° C., it has a low recording sensitivity and requires high power for high-speed recording.
- it is necessary to increase the amount of Sb to increase the crystallization speed.
- the amount of Sb exceeds 90 atomic%, the phase of Sb is separated, so that there is a problem that the initial crystallization cannot be performed uniformly. If the initial crystallization cannot be performed uniformly, there is a problem that the initial recording characteristics from the initial recording to about 10 repetitions are remarkably deteriorated, and cannot be put to practical use.
- Patent Document 1 JP-A-2000-339751
- Patent Document 2 Japanese Patent Application Laid-Open No. 2002-225437
- Patent Document 3 JP 2002-264515 A
- Patent Document 4 JP-A-9-286174
- Patent Document 5 JP-A-9-1286175
- the initial crystallization is easy, the recording sensitivity is good even at the same linear capacity as DVD-ROM and the recording linear velocity is 10 times or more, and the recording can be performed repeatedly.
- An object of the present invention is to provide a phase change type information recording medium excellent in storage reliability and a sputtering target for manufacturing the phase change type information recording medium.
- phase change type information recording medium having the same capacity as a DVD-ROM and having good repetitive recording characteristics in a wide recording linear velocity region and the phase change type information recording medium are manufactured. And a method for using a phase change type information recording medium, and an optical recording apparatus.
- an alloy containing Sn, Sb, Ga, and Ge as main components (at least 90 atomic%) as a material constituting a phase change recording layer.
- Good sensitivity is obtained (lower melting point than GaSb system).
- a DVD system recording system with a wavelength of 660 ⁇ m and a lens NA of 0.65 is used, about 35 mZs or more can be obtained.
- the present invention is based on the above findings by the present inventors, and the means for solving the above problems are as follows. That is,
- a substrate comprising at least a first protective layer, a phase change recording layer, a second protective layer, and a reflective layer on the substrate in any of the above-mentioned order and the reverse order.
- a phase change type information recording medium characterized by having a composition represented by Formula 1.
- the phase change recording layer since the phase change recording layer has a composition represented by the following formula 1, it has excellent storage stability, has the same capacity as DVD-ROM, and has a recording linear velocity. Can obtain a phase-change type information recording medium that can be repeatedly recorded at a recording linear velocity 3 times or more that of DVD
- phase change information recording medium according to ⁇ 1>, wherein the phase change recording layer has a composition represented by the following formula 1. Since the phase change recording layer described in ⁇ 2> has a composition represented by the following formula 1, the recording linear velocity is the same as that of a DVD-ROM and the recording linear velocity is Phase-change information with good repetitive recording at recording linear speeds of 10x or higher A recording medium is obtained.
- phase change information recording medium according to ⁇ 2>, wherein the phase change recording layer has a composition represented by the following formula 1.
- the phase change recording layer has a composition represented by the following formula 1
- the linear velocity between 3 to 8 times the speed of DVD
- repetitive recording is good in a wide recording linear velocity region
- information can be recorded on a phase change type information recording medium by CAV (constant rotation speed method) in which the recording linear velocity differs at a radial position.
- X has the same meaning as described above.
- phase change information recording medium according to any one of ⁇ 1> to ⁇ 3>, wherein the phase change recording layer has a composition represented by the following formula 2.
- phase change information recording medium according to ⁇ 5>, wherein the phase change recording layer has a composition represented by the following formula 2.
- phase change recording layer according to any one of ⁇ 1> to ⁇ 6>, wherein the laser beam irradiation causes a reversible phase change to perform at least one of recording, reproducing, erasing, and rewriting of information. Is a phase change type information recording medium.
- the thickness of the first protective layer is t (nm)
- the thickness of the phase change recording layer is t (nm)
- the thickness of the reflective layer was t (nm), the thickness of the reflective layer was t (nm), and the wavelength of the laser light was (nm).
- the appropriate thickness range of the first protective layer, the phase change recording layer, the second protective layer, and the reflective layer is determined in relation to the laser wavelength (nm). If the wavelength of the laser beam used for recording / reproducing of the phase change type information recording medium is determined, the appropriate film thickness range can be selected and the medium can be designed according to these equations.
- first protective layer and the second protective layer contain a mixture of ZnS and Si ⁇ ⁇ 1>
- phase-change information recording medium according to any one of ⁇ 1> to ⁇ 9>, wherein the reflective layer contains one of Ag and an Ag alloy.
- ⁇ 1 1> force layer having an interface layer between the phase change recording layer and the first protective layer.
- the interface layer contains SiO, and the interface layer has a thickness of 10 nm.
- phase-change information recording medium according to any one of ⁇ 1> to ⁇ 12>, further including a third protective layer between the second protective layer and the reflective layer.
- X represents at least one element selected from Ag, Zn, In and Cu forces.
- X has the same meaning as described above.
- X has the same meaning as described above.
- phase change type information recording medium having at least a first protective layer, a phase change recording layer, a second protective layer, and a reflective layer on a substrate in any of the above-described order and reverse order.
- phase-change information recording medium is rotated at a constant linear velocity in the range of 10- 21m / s, before Symbol including the initial crystallization step of performing initial crystallization at a power density of 15- 40mW / / im 2 ⁇ 20>
- ⁇ 22> At least one of recording, reproducing, erasing, and rewriting of information by irradiating a laser beam from the first protective layer side in the phase change type information recording medium according to any one of ⁇ 22> to ⁇ 13>.
- a phase change type information recording medium characterized by performing
- An optical recording device that irradiates a laser beam from a light source to a phase-change information recording medium to perform at least one of recording, reproducing, erasing, and rewriting information on the phase-change information recording medium.
- An optical recording apparatus wherein the changeable information recording medium is a phase change type information recording medium described in any one of ⁇ 1> and ⁇ 13>.
- the phase change type information recording medium of the present invention is irradiated with a laser beam to record, reproduce, erase or rewrite information. Do the force. As a result, information can be stably and reliably recorded, reproduced, erased, and rewritten, or the information can be efficiently shifted.
- the optical recording apparatus of the present invention irradiates a laser beam from a light source to a phase change type information recording medium to record or reproduce at least any of information on the phase change type information recording medium.
- the phase change type information recording medium of the present invention is used as the phase change type information recording medium.
- at least one of recording, reproducing, erasing, and rewriting of information can be performed stably and reliably.
- FIG. 1 is a cross-sectional view showing one example of a phase change type information recording medium of the present invention.
- FIG. 2 is a graph showing the jitter of the phase change type information recording medium of Example 16 from the first time to 1000 times of repeated recording.
- FIG. 3 is a graph showing the jitter of the phase change type information recording medium of Example 17 from the first time to 1000 times of repeated recording.
- FIG. 4 is a graph showing the repetitive recording characteristics of a phase change type information recording medium of Example 16.
- FIG. 5 is a graph showing the repetitive recording characteristics of a phase change type information recording medium of Example 18.
- the phase change type information recording medium of the present invention comprises a substrate, and at least a first protective layer, a phase change recording layer, a second protective layer, and a reflective layer on the substrate in any one of the above-mentioned order and the reverse order. It further has other layers as required.
- the phase-change information recording medium performs at least one of recording, reproducing, erasing, and rewriting of information by irradiating a laser beam from the first protective layer side.
- the storage stability is excellent, the recording capacity is the same as that of DVD-ROM, and the recording linear velocity is DV.
- the phase change recording layer needs to be composed of a yarn represented by the following formula 1.
- the phase change recording layer has a composition represented by the following formula 2.
- the melting point of the Sn Sb compound is as low as 425 ° C and the crystallization rate is extremely high.
- Ga which has an effect of facilitating rufusing
- Ge which has an effect on storage stability
- Ga and Ge have the effect of slowing down the crystallization speed of the Sn Sb compound.
- the phase change recording layer has a composition represented by the following formula 1.
- a phase-change information recording medium having excellent storage stability and capable of repeatedly recording at a recording linear velocity equal to or higher than that of a DVD-ROM and having a recording linear velocity equal to or higher than that of a DVD-ROM is obtained.
- X represents at least one element selected from Ag, Zn, In and Cu.
- the phase change recording layer has a composition represented by the following formula 2.
- the melting point becomes high and the sensitivity is deteriorated. If Sn exceeds 25 atomic%, the crystallization rate is increased. May become too fast to be made amorphous. On the other hand, if Sb is less than 40 atomic%, the melting point may be high and the sensitivity may be low. On the other hand, if Sb exceeds 91 atomic%, the storage reliability of the amorphous mark may decrease. If the content of Ga and Ge is less than 2 atomic%, the storage reliability may be deteriorated. On the other hand, if the content of Ga and Ge exceeds 20 atomic%, the crystallization temperature may be too high and the initial crystallization may be difficult.
- the phase-change recording layer contains at least one element selected from Ag, Zn, In and Cu. Thereby, the storage reliability can be further improved.
- the addition amount of these elements is preferably 0 to 10 at%, more preferably 0 to 7 at%.
- the additive amount is more than 10 atomic%, the crystallization temperature becomes too high initial crystallization is difficult, such is Rukoto force s.
- Te is further added to the phase change recording layer.
- the addition amount of Te is preferably 0.10 atomic%, more preferably 0-7 atomic%. This facilitates initial crystallization and makes it easier to obtain a uniform crystal state, and can reduce an increase in jitter due to repeated recording from the first to about ten times.
- the thickness of the first protective layer is t (nm), and the thickness of the phase-change recording layer is t (nm).
- the thickness of the second protective layer is t (nm)
- the thickness of the reflective layer is t (nm)
- the reflectivity of the optical recording medium is 18 in order to maintain reproduction compatibility with DVD-ROM.
- the thickness of the second protective layer and the reflective layer is set to a range that satisfies the above film thickness condition, and the thickness of the phase change recording layer and the first protective layer is mainly adjusted. You only have to control.
- the thickness of the phase change recording layer if the film thickness is too small, the light absorbing ability of the recording layer may decrease, and if the film thickness is too large, the recording sensitivity may decrease. Therefore, the thickness of the phase change recording layer is preferably in the range of 0.015 ⁇ t / ⁇ ⁇ 0.032.
- the thickness of the phase change recording layer is set in the range of 0.015 ⁇ t / ⁇ ⁇ 0.032.
- the thickness condition of the first protective layer that satisfies the above optical conditions includes: 0.070 ⁇ t / ⁇ 0.160
- the thickness of the first protective layer is given by the following equation: 0.070 ⁇ t /
- the second protective layer regenerates heat generated by thermal relaxation of the light energy absorbed in the above-described phase change type information recording medium (the main body of absorption is the phase change recording layer material). It has the role of accumulating, propagating to the reflective layer, and radiating heat.
- the second protective layer preferably has a thickness S that is not too thick, and is more preferable than 0.005 ⁇ t / ⁇ 0.40. Than this
- the phase change recording layer may be heated, causing the recording marks to be blurred, and the recording characteristics, particularly the jitter characteristics, to deteriorate.
- the jitter characteristic is evaluated by the variation CJZTW of the mark edge with respect to the channel period Tw.
- the thickness of the second protective layer is smaller than this, the light energy absorbed by the phase change recording layer is accumulated, and the phase change recording layer melts to form a recording mark, thereby exhibiting the principle of phase change recording. Since the heat is radiated to the reflective layer before the heat reaches the required level, there arises a problem that sufficient recording characteristics cannot be obtained.
- the thickness of the second protective layer Since the power density of the laser light beam changes depending on the wavelength used in the recording system, it is necessary to change the thickness of the second protective layer, but the thickness is limited to a range satisfying the condition of the optical thickness. Can be solved. This is also true for other layer thickness conditions.
- FIG. 1 is a schematic cross-sectional view showing an example of the phase change type information recording medium of the present invention, and shows a substrate 1, a first protective layer 2, a phase change recording layer 3, and a second protective layer on the substrate 1.
- the layer 4, the third protective layer 5, and the reflective layer 6 are laminated in this order.
- a protective layer made of an ultraviolet (UV) curable resin may be formed on the reflective layer by spin coating. If necessary, further reinforcing or protecting the phase change type information recording medium may be performed on the protective layer. For that, you can attach another substrate.
- UV ultraviolet
- the substrate As a material of the substrate 1, glass, ceramic, resin, and the like are usually used, and a resin substrate is preferable in terms of moldability and cost.
- the resin include a polycarbonate resin, an acrylic resin, an epoxy resin, a polystyrene resin, an acrylonitrile styrene copolymer, a polyethylene resin, a polypropylene resin, a silicone resin, a fluorine resin, an ABS resin, and a urethane resin.
- polycarbonate resin and acrylic resin are particularly preferable from the viewpoint of moldability, optical characteristics, and cost.
- the thickness of the substrate 1 is determined by the wavelength of a commonly used laser and the focusing characteristics of a pickup lens, which are not particularly limited.
- a substrate with a thickness of 1.2 mm is used for a CD system with a wavelength of 780 nm, and a substrate with a thickness of 0.6 mm is used for a DVD system with a wavelength of 650 to 665 nm.
- the substrate for example, a polycarbonate resin substrate having a guide groove for tracking on its surface, a disk shape of 12 cm in diameter and 0.6 mm in thickness, and excellent in processability and optical characteristics is preferable.
- the guide groove for tracking has a pitch of 0.74 ⁇ 0.03 m and a groove depth of 22-40 ⁇ m, the groove width is preferably a meandering groove in the range of 0.2-0.4 ⁇ ⁇ .
- the degree of modulation can be increased.
- the bonding layer for bonding the substrate 1 on which the information signal is written and the bonding substrate is a double-sided adhesive sheet in which an adhesive is applied to both sides of the base film, a thermosetting resin, or an ultraviolet ray. It is formed of a cured resin.
- the thickness of the adhesive layer is usually about 50 zm.
- the bonding substrate does not need to be transparent when an adhesive sheet or a thermosetting resin is used as an adhesive layer, but when an ultraviolet-curable resin is used for the adhesive layer. It is preferable to use a transparent substrate that transmits ultraviolet light. Usually, the thickness of the bonding substrate is preferably 0.6 mm, which is the same as that of the transparent substrate 1 on which information signals are written.
- the first protective layer 2 preferably has good adhesion to the substrate and the phase change recording layer, and preferably has high heat resistance. Further, optical interference that enables effective light absorption of the phase change recording layer is preferable. Since it also plays a role as a layer, it is preferable to have optical characteristics suitable for repeated recording at a high linear velocity.
- the material of the first protective layer for example, Si ⁇ , SiO, Zn ⁇ , SnO, AlO, Ti ⁇
- Metal oxides such as, InO, Mg O, ZrO; nitrides such as SiN, A1N, TiN, BN, ZrN;
- Sulfides such as ZnS, InS and TaS; carbides such as SiC, TaC, BC, WC, TiC and ZrC
- Diamond-like carbon or a mixture thereof.
- a mixture of ZnS and SiO is preferred.
- the mixing molar ratio of ZnS and SiO (ZnS: SiO) is 50-90: 50.
- One 10 is preferable, 60-90: 40-10 force is more preferable than S.
- the first protective layer 2 may be formed by various vapor deposition methods, for example, a vacuum deposition method, a sputtering method, a plasma CVD method, a photo CVD method, an ion plating method, an electron beam deposition method, and the like. Is mentioned. Among these, the sputtering method is superior in terms of mass productivity, film quality, and the like.
- a vacuum deposition method for example, Ar gas is used as a film forming gas
- input power is 3 kW
- Ar gas pressure film forming chamber pressure
- the film thickness (t) of the first protective layer is represented by I, where the wavelength of the laser beam is preferably 50 to 90 nm. At this time, it is preferable to satisfy the following expression: 0.070 ⁇ t ⁇ 0.160. Thinner than this range
- the phase-change recording layer 3 preferably has the composition represented by the formula 1 and the composition represented by the formula 2 as described above.
- the film thickness (t) of the phase change recording layer is as described above when the wavelength of the laser beam is ⁇ .
- the film thickness of the modified recording layer is too small, the light absorbing ability may be reduced and the function as the phase change recording layer may be lost. If the film thickness is too large, the recording sensitivity may be deteriorated.
- various vapor phase epitaxy methods for example, a vacuum evaporation method, a sputtering method, a plasma CVD method, a photo CVD method, an ion plating method, an electron beam evaporation method, and the like can be used. Is done. Among these, the sputtering method is superior in terms of mass productivity, film quality, and the like.
- Ar gas is used as a film forming gas
- input power is 1 kW
- Ar gas pressure film forming chamber pressure
- the second protective layer 4 preferably has good adhesion to the phase-change recording layer and the reflective layer, and preferably has high heat resistance. Since it also plays a role as an interference layer, it preferably has optical characteristics suitable for repetitive recording at a high linear velocity.
- the material of the first protective layer for example, Si ⁇ , SiO
- Metal oxides such as, InO, Mg O, ZrO; nitrides such as SiN, A1N, TiN, BN, ZrN;
- Sulfides such as ZnS, In S and TaS; carbides such as SiC, TaC, BC, WC, TiC and ZrC
- Diamond-like carbon or a mixture thereof.
- a mixture of ZnS and SiO is preferred.
- the mixture molar ratio of ZnS and Si ⁇ (ZnS: SiO 2) is 50 90:50
- One 10 is preferable, 60-90: 40-10 force is more preferable than S.
- various vapor deposition methods for example, a vacuum deposition method, a sputtering method, a plasma CVD method, a photo CVD method, an ion plating method, an electron beam deposition method, and the like Is used.
- the sputtering method is not suitable for mass production, film quality, etc. Is excellent.
- Ar gas is used as a film forming gas
- input power is 3 kW
- Ar gas pressure film forming chamber pressure
- the film thickness (t) of the second protective layer is preferably 6 to 20 nm.
- the thickness of the second protective layer is smaller than this range, the recording sensitivity may be deteriorated, and if the thickness is too large, heat may be excessively confined.
- the reflection layer plays a role as a light reflection layer, and also plays a role as a heat radiation layer for releasing heat applied to the phase change recording layer by laser light irradiation during recording. Since the formation of amorphous marks is greatly affected by the cooling rate due to heat radiation, the selection of the reflective layer is important for phase change type information recording media that can handle high linear velocities.
- the reflective layer 6 can be made of, for example, a metal material such as Al, Au, Ag, Cu, or Ta, or an alloy thereof.
- Cr, Ti, Si, Cu, Ag, Pd, Ta, or the like can be used as an additive element to these metal materials.
- pure Ag or Ag alloys for which a metal with high thermal conductivity / high reflectivity is desirable, have a phase change recording layer of high temperature during recording when the thermal conductivity of Ag is extremely high at 427 W / m'K. This is because a quenching structure suitable for forming amorphous marks can be realized as soon as it reaches.
- the amount of copper added to the copper is preferably about 0.1 to 10 atomic%, and particularly preferably 0.5 to 3 atomic%. Excessive addition of copper can reduce the high thermal conductivity of Ag.
- the reflective layer 6 can be formed by various vapor deposition methods, for example, a vacuum deposition method, a sputtering method, a plasma CVD method, a photo CVD method, an ion plating method, an electron beam deposition method, or the like. Among them, the sputtering method is superior in mass productivity, film quality, and the like.
- the sputtering conditions were as follows: Ar gas was used as the deposition gas, input power was 5 kW, and Ar gas pressure was Pressure) 2 X 10 Torr is preferred.
- the heat dissipation capacity of the reflective layer is basically proportional to the thickness of the layer, but good disk characteristics can be obtained if the thickness of the reflective layer is 6 Onm or more. In this case, there is no particular limit value for the thicker layer, and the thickness may be within a range allowable from the viewpoint of the manufacturing cost of the disk. ) Is a laser as described above
- the thickness of the radiation layer is smaller than this range, the heat radiation effect may not be obtained.
- a resin protective layer can be further provided on the reflective layer 6 as needed.
- the resin protective layer has an effect of protecting the phase change recording layer in the process and at the time when the product is formed, and is usually formed of an ultraviolet curable resin.
- the film thickness of the resin protective layer is 2-5 ⁇ m.
- a third protective layer 5 is provided between the second protective layer 4 and the reflective layer 6.
- a material of the third protective layer 5 for example, Si, SiC, SiN, Si ⁇ , TiC, Ti ⁇ , TiC-Ti
- TiC-TiO 2, Si or SiC is particularly preferred because of its high barrier properties.
- the reflective layer When pure Ag or Ag alloy is used for the reflective layer, it contains sulfur such as a mixture of ZnS and Si ⁇
- the third protective layer for preventing such a reaction includes (1) having a barrier ability to prevent a sulfurization reaction of Ag, (2) being optically transparent to laser light, ( 3) Select an appropriate material from the viewpoints of low thermal conductivity, (4) good adhesion to protective layer and reflective layer, and (5) easy formation for amorphous mark formation.
- the material is preferable as a constituent material of the third protective layer.
- the thickness of the third protective layer is preferably 2 to 20 nm, more preferably 210 nm. If the film thickness is less than 2 nm, it may not function as a barrier layer, and if it exceeds 20 nm,
- the degree of modulation may be reduced.
- One interface layer one It is preferable to provide an interface layer between the first protective layer 2 and the phase change recording layer 3.
- the interface layer contains Si ⁇ and has a thickness of 2-10 nm. This allows high power
- the thickness of the interface layer is less than 2 nm, it may be difficult to form a uniform Si film.
- phase change type information recording medium of the present invention has been described in detail.
- the present invention is not limited to the above-described embodiment, and may be variously changed without departing from the gist of the present invention. I don't support it.
- it can be applied to a phase-change type information recording medium in which two same or different phase-change type information recording media are bonded to each other via a resin protective layer instead of a bonding substrate as seen in a DVD system. .
- the sputtering target of the present invention has a composition represented by the following formula 1, and is used for producing a phase change recording layer.
- X represents at least one element selected from Ag, Zn, In and Cu.
- the sputtering target has a composition represented by the following formula 2, and is used for manufacturing a phase change recording layer. (Equation 2)
- the method for producing the sputtering target can be appropriately selected depending on the purpose, and there is no particular limitation.
- a predetermined charged amount is weighed in advance, and is heated and melted in a glass amplifier. Thereafter, this is taken out and pulverized by a pulverizer, and the obtained powder is heated and sintered to obtain a disk-shaped sputtering target.
- the initial crystallization is easy, the recording sensitivity is good even at the same linear capacity as the DVD-ROM and the recording linear velocity is 10 times or more, and repetitive recording is possible.
- phase change type information recording medium having the same capacity as a DVD-ROM and having good repetitive recording characteristics in a wide recording linear velocity region, and a sputtering target for manufacturing the phase change type information recording medium. Can be provided.
- the method for producing a phase change recording medium of the present invention includes at least a phase change recording layer forming step, an initial crystallization step, and further includes other steps as necessary.
- Phase change recording layer forming step 1 Phase change recording layer forming step 1
- the phase change recording layer forming step is a step of forming a phase change recording layer by a sputtering method using the sputtering target of the present invention.
- the sputtering method is not particularly limited and can be appropriately selected from known methods according to the purpose.
- an Ar gas is used as a film forming gas, an input voltage is 11 kW, and a film forming gas flow rate is 10 to 10 kW. 40 sccm is preferred.
- the initial crystallization process is a process of performing initial crystallization at a power density 15- 40mWZ xm 2 Specifically, while rotating a phase change type information recording medium at a predetermined linear velocity or a predetermined constant angular velocity, a semiconductor laser (for example, 600-720 nm A recording light such as an oscillation wavelength is irradiated. The irradiation light causes the phase change recording layer to absorb the light and locally increase the temperature. For example, pits are generated and information is recorded by changing the optical characteristics. Reproduction of the information recorded as described above is performed by irradiating a laser beam from the first protective layer side while rotating the phase change type information recording medium at a predetermined linear velocity, and detecting the reflected light. Can be.
- the method for using the phase change type information recording medium of the present invention includes at least recording, reproducing, erasing and rewriting of information by irradiating a laser beam from the first protective layer side of the phase change type information recording medium of the present invention. Do either one.
- the wavelength of the laser light is preferably 400 to 780 nm, and more preferably 630 to 680 nm.
- the optical recording apparatus of the present invention is an optical recording apparatus that irradiates a laser beam from a light source to a phase change type information recording medium to record information on the phase change type information recording medium.
- the above-mentioned phase change type information recording medium is used.
- the optical recording device is not particularly limited, and can be appropriately selected according to the purpose.
- a laser light source that is a light source such as a semiconductor laser that emits a laser beam, and a laser beam that is emitted from a laser light source
- a condensing lens that condenses light on an optical recording medium mounted on a spindle, an optical element that guides laser light emitted from a laser light source to a condensing lens and a laser light detector, and a laser that detects reflected light of laser light
- a photodetector is provided, and other means are provided as necessary.
- the optical recording device guides laser light emitted from a laser light source to a light collecting lens by an optical element, and condenses and irradiates the laser light to a phase change type information recording medium by the light collecting lens. To record. At this time, the optical recording device guides the reflected light of the laser beam to the laser light detector, and controls the light amount of the laser light source based on the amount of laser light detected by the laser light detector.
- the laser light detector converts the detected amount of the detected laser light into a voltage or a current and outputs it as a detected amount signal.
- Examples of the other means include a control means.
- the control means is not particularly limited as long as it can control the movement of each of the above-mentioned means, and can be appropriately selected according to the purpose.
- a sequencer for irradiating and scanning an intensity-modulated laser beam there are devices such as a computer.
- phase change type information recording medium A phase change type information recording medium (disk) was prepared as follows.
- the sputtering method was performed using a single-wafer sputtering apparatus (manufactured by Unaxis, Big Sprinter) in an Ar gas atmosphere at an input power of 11 to 5 kW and an Ar gas pressure of 2 ⁇ 10 ⁇ 3 Torr.
- a polycarbonate resin substrate having a track pitch of 0.74 / im, a groove depth of 27 nm, a diameter of 12 cm, and a thickness of 0.6 mm was prepared.
- thickness was deposited first protective layer by sputtering so as to 80nm on the substrate, using a sputtering target having a composition of Sn Sb Ga Ge (atomic 0/0),
- a phase change recording layer was formed on the first protective layer by a sputtering method so as to have a thickness of 20 nm.
- a second protective layer was formed on the phase-change recording layer by a sputtering method so as to have a thickness of 14 nm. A film was formed.
- a third protective layer was formed on the second protective layer by a sputtering method so as to have a thickness of 4 nm.
- a reflective layer was formed on the third protective layer by a sputtering method so as to have a thickness of 180 nm.
- an acrylic curable resin was applied on the reflective layer by a spinner so as to have a film thickness of 5 to 10 zm, followed by ultraviolet curing to form an organic protective layer.
- Example 1 a polycarbonate resin substrate having a diameter of 12 cm and a thickness of 0.6 mm was bonded onto the organic protective layer using an adhesive. As described above, the phase change type information recording medium of Example 1 was manufactured.
- a phase change type information recording medium of Example 2 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- a phase change type information recording medium of Example 3 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- the sputtering tag consisting of Sn Sb Ga Ge composition (atomic%)
- a phase change type information recording medium of Example 4 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a unit.
- phase-change information recording medium - in Example 1 the sputtering coater having a composition of Sn Sb Ga Ge (atomic 0/0)
- a phase change type information recording medium of Example 5 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- phase-change information recording medium - in Example 1 the sputtering coater having a composition of Sn Sb Ga Ge (atomic 0/0)
- a phase change type information recording medium of Example 6 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- phase-change information recording medium - in Example 1 the sputtering coater having a composition of Sn Sb Ga Ge (atomic 0/0)
- a phase change type information recording medium of Example 7 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- a phase change type information recording medium of Example 8 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- a phase change type information recording medium of Comparative Example 1 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- a phase change information recording medium of Comparative Example 2 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a unit.
- a phase change type information recording medium of Comparative Example 3 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- phase-change information recording medium - in Example 1 the sputtering coater having a composition of Sn Sb Ga Ge (atomic 0/0)
- a phase change type information recording medium of Comparative Example 4 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- phase-change information recording medium - in Example 1 the sputtering coater having a composition of Sn Sb Ga Ge (atomic 0/0)
- a phase change type information recording medium of Comparative Example 5 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- phase change type information recording medium-In Example 1 the sputtering target having the composition (atomic%) of Sn Sb Ga Ge
- a phase change type information recording medium of Comparative Example 6 was produced in the same manner as in Example 1 except that a phase change recording layer was formed by a sputtering method using a get.
- phase-change information recording medium - in Example 1 the sputtering coater having a composition of Sn Sb Ga Ge (atomic 0/0)
- a phase change type information recording medium of Comparative Example 7 was produced in the same manner as in Example 1, except that a phase change recording layer was formed by a sputtering method using a get.
- Each of the obtained phase change type information recording media was initially crystallized using a semiconductor laser having a wavelength of 810 nm. Specifically, a phase change type information recording medium is rotated at a constant linear velocity of 20 mZs, an optical head with a beam width of 75 ⁇ m is used, and a laser with a power density of 25 mWZ ⁇ m 2 is used. The initial crystallization was performed by irradiating light while sending it in the radial direction and moving it at 50 / m / r.
- the evaluation of recording / reproducing was performed using an optical disk evaluation apparatus (DDU-1000, manufactured by Pulstec) having a pickup head with a wavelength of 660 nm and a numerical aperture of NA 0.65.
- the recording linear velocity was 10.5m / s (equivalent to 3x DVD speed) and 28m / s (equivalent to 8x DVD speed), and the recording power was changed according to the linear velocity.
- the bias power was 0.2 mW and the erasing power was 215 mW, each of which was optimized.
- its C / N ratio When implementing a rewritable optical disk system, its C / N ratio must be at least 45 dB or more.
- the phase change type information recording medium of Example 1-18 has a recording linear velocity of 28m / s, which is equivalent to 8x DVD speed, even when repeatedly recorded at a recording linear velocity of 10.5m / s, which is equivalent to 3x DVD speed. Even when the recording was repeated at, a C / N ratio of 45 dB or more was obtained.
- Comparative Example 7 40 41 From the results in Table 4, in Comparative Examples 1 to 7, the C / N ratio when recording was repeated at a recording linear velocity of 10.5 m / s and a recording linear velocity of 28 m / s was the same as that of Comparative Example 1. Except for the linear velocity of 10.5 m / s, all were below 45 dB.
- phase change type information recording medium A phase change type information recording medium (disk) was prepared as follows.
- the sputtering method was performed using a single-wafer sputtering apparatus (manufactured by Unaxis, Big Sprinter) in an Ar gas atmosphere at an input power of 11 to 5 kW and an Ar gas pressure of 2 ⁇ 10 ⁇ 3 Torr.
- a polycarbonate resin substrate having a track pitch of 0.74 zm, a groove depth of 27 nm, a diameter of 12 cm, and a thickness of 0.6 mm was prepared.
- a phase change recording layer was formed on the first protective layer by a sputtering method so as to have a thickness of 18 nm.
- a second protective layer was formed on the phase change recording layer by a sputtering method so as to have a thickness of 10 nm.
- a third protective layer was formed on the second protective layer by a sputtering method so as to have a thickness of 4 nm.
- a reflective layer was formed on the third protective layer by a sputtering method so as to have a thickness of 140 nm.
- an acrylic curable resin was applied on the reflective layer by a spinner so as to have a film thickness of 5 to 10 zm, followed by ultraviolet curing to form an organic protective layer.
- Example 9 a polycarbonate resin substrate having a diameter of 12 cm and a thickness of 0.6 mm was bonded on the organic protective layer using an adhesive.
- the phase-change information recording medium of Example 9 was produced.
- phase-change information recording medium - in Example 9 a sputtering coater having a composition of Sn Sb Ga Ge (atomic 0/0)
- a phase change type information recording medium of Example 10 was produced in the same manner as in Example 9 except that a phase change recording layer was formed by a sputtering method using a get.
- a phase change type information recording medium of Example 11 was produced in the same manner as in Example 9, except that a phase change recording layer was formed by a sputtering method using a get.
- phase-change information recording medium - in Example 9 a composition of Sn Sb Ga Ge Ag (atomic 0/0) sputtering
- a phase change type information recording medium of Example 12 was produced in the same manner as in Example 9 except that a phase change recording layer was formed by a sputtering method using a target.
- phase-change information recording medium - in Example 9 a composition of Sn Sb Ga Ge In (atomic 0/0) sputtering
- Example 9 except that a phase change recording layer was formed by a sputtering method using a target. In the same manner as in the above, a phase change type information recording medium of Example 13 was produced.
- phase-change information recording medium - in Example 9 the sputtering data having a composition of Sn Sb Ga Ge Zn (atomic 0/0)
- a phase change type information recording medium of Example 14 was produced in the same manner as in Example 9, except that a phase change recording layer was formed by a sputtering method using one get.
- phase-change information recording medium - in Example 9 the sputtering data having a composition of Sn Sb Ga Ge Cu (atomic 0/0)
- a phase change type information recording medium of Example 15 was produced in the same manner as in Example 9 except that a phase change recording layer was formed by a sputtering method using one get.
- a phase change information recording medium of Comparative Example 8 was produced in the same manner as in Example 9 except that a phase change recording layer was formed by a sputtering method using a unit.
- a phase change information recording medium of Comparative Example 9 was produced in the same manner as in Example 9 except that a phase change recording layer was formed by a sputtering method using a unit.
- phase change type information recording media was initially crystallized using a semiconductor laser having a wavelength of 810 nm. Specifically, the phase-change information recording medium is rotating at a constant linear velocity 20MZs, using an optical head beam width 75 mu m, the power density sends a laser beam 25mWZ ⁇ m 2 in the radial direction 50 mu m The initial crystallization was performed by irradiation while moving at / r.
- a pickup head with a wavelength of 660 nm and a numerical aperture of NA 0.65 was used.
- Jitter is a value obtained by standardizing data to clock jitter ⁇ with the detection window width Tw. Table 6 shows the results of each evaluation.
- the storage stability was evaluated by writing a recording mark on each sample and maintaining the sample in a constant temperature bath at 80 ° C_85% RH for 300 hours. Table 6 shows the results.
- ⁇ : Jitter increase is 1% or more and less than 3%
- the stability of the reproduction light is as follows: After writing a recording mark on each sample and irradiating the reproduction light for 10 minutes at a linear velocity of 3.5 m / s and a power of 1. The sex was evaluated. Table 6 shows the results.
- ⁇ : Jitter increase is 1% or more and less than 3%
- Example 9 (at%) Example 9 18 55 11 16-Example 10 19 50 14 17-Example 11 17 59 12 12-Example 12 16 50 16 13 Ag: 5 Example 13 10 62 10 13 In: 5 Example 14 15 70 5 8
- phase change type information recording media of Example 12 and Example 13 There was no change even after holding in a -85% RH constant temperature bath for 600 hours. Further, the reflectance showed 20% or more even after 1,000 times of bar light, and there was almost no change even after the storage stability test.
- Comparative Example 8 required higher recording power than the case of Examples 9-115.
- the initial jitter was as high as 13.4% and the modulation was as low as 50% even when writing at 38mW, the limit of the laser diode (LD) used.
- the recording linear velocity is 17.5m / s and the recording linear velocity is 24.5m / s, the storage stability is good, but when the recording linear velocity is 35.Om/s, sufficient amorphous marks are formed. It was considered that the deterioration was quick because it was not performed.
- phase change type information recording medium A phase change type information recording medium (disk) was prepared as follows.
- the sputtering method was performed using a single-wafer sputtering apparatus (manufactured by Unaxis, Big Sprinter) in an Ar gas atmosphere at an input power of 11 to 5 kW and an Ar gas pressure of 2 ⁇ 10 ⁇ 3 Torr.
- a polycarbonate resin substrate having a track pitch of 0.74 zm, a groove depth of 27 nm, a diameter of 12 cm, and a thickness of 0.6 mm was prepared.
- thickness was deposited first protective layer by sputtering so as to 60nm on the substrate, using a sputtering target having a composition of Sn Sb Ga Ge (atomic 0/0),
- a phase change recording layer is formed on the first protective layer by a sputtering method so as to have a thickness of 16 nm. A film was formed.
- a second protective layer was formed on the phase change recording layer by a sputtering method so as to have a thickness of 8 nm.
- a third protective layer was formed on the second protective layer by a sputtering method so as to have a thickness of 4 nm.
- a reflective layer was formed on the third protective layer by a sputtering method so as to have a thickness of 140 nm.
- an acrylic curable resin was applied on the reflective layer by a spinner so as to have a film thickness of 5 to 10 zm, followed by ultraviolet curing to form an organic protective layer.
- Example 16 a phase change type information recording medium of Example 16 was produced.
- the obtained phase change type information recording medium is rotated at a constant linear velocity of 20 m / s, and a laser beam having a power density of 25 mW / ⁇ m 2 is fed in a radial direction using an optical head having a beam width of 75 ⁇ m to 50 / im.
- Initial crystallization was performed by irradiation while moving at / r.
- the evaluation of recording / reproduction was performed using an optical disk evaluation apparatus (DDU-1000, manufactured by Pulstec) having a pickup head with a wavelength of 660 nm and a numerical aperture of 0.65.
- the recording linear speed is 10.5m / s (3x speed), 14m / s (4x speed), 21m / s (6x speed), and 28m / s (8x speed), and the recording power is changed according to the linear speed.
- the bias power was 0.2 mW and the erase power was 5-1 10 mW, and each was optimized.
- Figure 2 shows the jitter for the initial force up to 1000 repetitive recordings. From the results in Fig. 2, the jitter was 10% or less at all recording linear velocities. In order to realize a rewritable optical disk system, jitter must be at least 10% or less.
- a phase change type information recording medium (disk) of Example 17 was produced in the same manner as in Example 16 except that a sputtering method was performed using a powerful sputtering target.
- the resulting phase change type information recording medium is rotated at a constant linear velocity 15MZs, using an optical head beam width 75 mu m, the power density is moved at 50 mu MZR sends laser light 20 mW / zm 2 radially
- the initial crystallization was performed by irradiating while irradiating.
- Example 16 The same evaluation as in Example 16 was performed on the obtained phase change type information recording medium. The results are shown in Figure 3. From the results shown in Fig. 3, the jitter from the first time to the 10th repetition recording was particularly good, and the jitter was within the DVD standard value of 9%.
- a phase change type information recording medium (disk) of Example 18 was produced in the same manner as in Example 16 except that the thickness was set to 2 nm.
- phase change type information recording medium and the phase change type information recording medium of Example 16 were rotated at a constant linear velocity of 20 m / s, and an optical head having a beam width of 75 ⁇ m was used.
- the power density was 25 mW / m 2 .
- Initial crystallization was performed by irradiating a laser beam in the radial direction while moving it at 50 / m / r.
- the obtained phase-change type information recording medium was evaluated for repetitive recording characteristics at a recording linear velocity of 28 m / s (corresponding to 8 ⁇ speed) and recording powers of 28 mW, 30 mW, 32 mW, 34 mW, 36 mW, and 38 mW.
- FIG. 4 shows the results of Example 16.
- FIG. 5 shows the results of Example 18.
- Example 18 Even at a high power of 36 mW or more, repetitive recording was performed. The 0th jitter was within 9%. High power by providing an interface layer with SiO force
- the phase-change type information recording medium of the present invention is easy in initial crystallization, has good recording sensitivity even at the same linear capacity as DVD-ROM, and has a recording linear velocity of 10 times or more. It is widely used for various phase change type information recording media, especially DVD-based optical recording media such as DVD-RAM, DVD-RW and DVD + RW.
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Abstract
Description
Claims
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EP04771189A EP1712367B1 (en) | 2004-02-05 | 2004-08-04 | Phase-change information recording medium, process for producing the same and sputtering target. |
DE602004031775T DE602004031775D1 (de) | 2004-02-05 | 2004-08-04 | Phasenänderungsinformationsaufzeichnungsmedium, verfahren zu dessen herstellung und sputtertarget. |
US11/244,346 US7438965B2 (en) | 2004-02-05 | 2005-10-04 | Phase-change information recording medium, manufacturing method for the same, sputtering target, method for using the phase-change information recording medium and optical recording apparatus |
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JP2004029923A JP4271051B2 (ja) | 2003-02-06 | 2004-02-05 | 相変化型情報記録媒体及びスパッタリングターゲット |
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US11/244,346 Continuation US7438965B2 (en) | 2004-02-05 | 2005-10-04 | Phase-change information recording medium, manufacturing method for the same, sputtering target, method for using the phase-change information recording medium and optical recording apparatus |
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WO2007105662A1 (en) | 2006-03-10 | 2007-09-20 | Ricoh Company, Ltd. | Optical recording medium |
JP2008052883A (ja) * | 2006-03-10 | 2008-03-06 | Ricoh Co Ltd | 光記録媒体 |
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KR100846691B1 (ko) * | 2004-09-09 | 2008-07-16 | 가부시키가이샤 리코 | 광기록 매체 |
JP4248486B2 (ja) * | 2004-12-15 | 2009-04-02 | 株式会社リコー | 相変化型光記録媒体 |
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Also Published As
Publication number | Publication date |
---|---|
DE602004031775D1 (de) | 2011-04-21 |
KR20060063780A (ko) | 2006-06-12 |
US20060077884A1 (en) | 2006-04-13 |
US7438965B2 (en) | 2008-10-21 |
EP1712367A1 (en) | 2006-10-18 |
EP1712367A4 (en) | 2008-11-26 |
EP1712367B1 (en) | 2011-03-09 |
TWI304210B (ja) | 2008-12-11 |
CN1767954A (zh) | 2006-05-03 |
TW200527421A (en) | 2005-08-16 |
KR100730978B1 (ko) | 2007-06-22 |
CN100513193C (zh) | 2009-07-15 |
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