WO2005017570A2 - Surface plasmon-enhanced nano-optic devices and methods of making same - Google Patents

Surface plasmon-enhanced nano-optic devices and methods of making same Download PDF

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Publication number
WO2005017570A2
WO2005017570A2 PCT/US2004/023499 US2004023499W WO2005017570A2 WO 2005017570 A2 WO2005017570 A2 WO 2005017570A2 US 2004023499 W US2004023499 W US 2004023499W WO 2005017570 A2 WO2005017570 A2 WO 2005017570A2
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WO
WIPO (PCT)
Prior art keywords
metal
radiation
islands
openings
cell
Prior art date
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Ceased
Application number
PCT/US2004/023499
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English (en)
French (fr)
Other versions
WO2005017570A3 (en
Inventor
Hong Koo Kim
Zhijun Sun
Yun Suk Jung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Pittsburgh
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University of Pittsburgh
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Filing date
Publication date
Application filed by University of Pittsburgh filed Critical University of Pittsburgh
Priority to JP2006522587A priority Critical patent/JP2007501391A/ja
Priority to EP04778827A priority patent/EP1661182A4/en
Priority to US10/566,946 priority patent/US7456383B2/en
Publication of WO2005017570A2 publication Critical patent/WO2005017570A2/en
Publication of WO2005017570A3 publication Critical patent/WO2005017570A3/en
Priority to US11/345,673 priority patent/US7420156B2/en
Anticipated expiration legal-status Critical
Priority to US12/274,748 priority patent/US20090073434A1/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/14—Arrangements for focusing or reflecting ray or beam
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
    • G01N21/6454—Individual samples arranged in a regular 2D-array, e.g. multiwell plates using an integrated detector array
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0256—Compact construction
    • G01J3/0259—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons
    • G01N21/554—Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6456—Spatial resolved fluorescence measurements; Imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/14—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
    • H01J5/02—Vessels; Containers; Shields associated therewith; Vacuum locks
    • H01J5/16—Optical or photographic arrangements structurally combined with the vessel
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J2003/1213—Filters in general, e.g. dichroic, band
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G02B2207/101—Nanooptics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Definitions

  • Figures 28, 29 and 30 are plots of transmission versus location on the detector for examples 8, 9 and 10 respectively.
  • the metal film or metal islands 1 5 have a periodic or quasi-periodic surface topography 1 2 provided on at least one surface of the metal film or islands 15, as shown in Figure 2D. If desired, the metal film or islands may be formed on a radiation transparent substrate 1 3.
  • the topography 1 2 is configured such that it enhances the transmission of the radiation in the openings 1 7.
  • the openings or transparent regions 1 7 are separated by a period a 0 which is much larger than the period of the first embodiment, such that the period of the openings 1 7 does not substantially contribute to the enhancement of the transmission of the radiation.
  • the period a 0 is preferably equal to the effective propagation distance of the surface plasmons, such as 5 microns or greater, preferably about 5-1 0 microns for Ag islands being irradiated with visible light.
  • Figure 5A illustrates an exemplary optical analyte detection system 500.
  • the system 500 includes an excitation source 501 , an analyte holder 502 and either the one dimensional spectrum analyzer 304 or the two dimensional multispectral imaging system 404 described above.
  • these antibodies are fluorescently labeled with any suitable fluorophore, such as an organic dye molecule or a semiconductor quantum dot.
  • any suitable fluorophore such as an organic dye molecule or a semiconductor quantum dot.
  • the analyte 503 contains antigen or proteins that specifically bind to the antibodies 508, these antigen or proteins bind to the antibodies 508.
  • the binding changes the characteristic of the radiation 504 emitted by the fluorophore in response to the excitation radiation. For example, the wavelength and/or intensity of the radiation 504 emitted by the fluorophore may be changed by the binding.
  • the photodetector 402 detects the radiation 504 and a computer or other processor 509 stores, transmits and/or displays the results of the detection by the photodetector. For example, when the radiation 504 from the fluorophore attached to the anthrax specific antibody 508 changes, the computer 509 indicates that the analyte blood 503 came from a patient who is infected with anth
  • the attachment members 508 may be omitted.
  • the surface of the analyte holder 502 may be treated to attach all proteins, antibodies, antigens or other analyte components of interest, and the different types of fluorescently labeled members 51 0 labeled with fluorophores which emit radiation of a different wavelength are provided onto the analyte 503.
  • Members 51 0 are designed to only bind to specific components of the analyte. If these analyte components are not present, then members 510 will not remain on the analyte holder 502. Thus, presence of a particular component of the analyte may be detected without attachment members 508 by determining the wavelength(s) of radiation emitted by the attached labeled members 51 0.
  • FIGs 9A, 9B and 9C illustrate one preferred method of forming the ridges in a transparent substrate (i.e., a unitary substrate or a multilayer substrate) 3, 1 3 or in a layer over the photodetector 203 using photolithography.
  • a photoresist layer 41 is formed on the first surface of the substrate 3, 1 3 (or photodetector 203).
  • the term "photoresist layer” includes any suitable positive or negative photosensitive layer used for semiconductor and other microdevice patterning.
  • the photoresist layer 41 is then selectively exposed by radiation, such as UV or visible light, or by an electron beam.
  • the Cr hardmask layer is then etched using the patterned photoresist layer as a mask.
  • the Cr layer is etched using a reactive ion etching (RIE) system (PlasmaTherm 790 ICP/RIE) in a two step etching process.
  • RIE reactive ion etching
  • step 1 CI2 (20 sccm) + O2 (10 seem) at 10 mTorr pressure, RIE power of 25 W and ICP power of 100 W for 30 seconds are used.
  • a metal film with a plurality of openings such as a metal film shown in Figure 2C is formed by angled deposition of metal on the ridges of a nanopore array.
  • the angled deposition method is described above and illustrated in Figure 8.
  • a metal layer is deposited over the nanopore array such that metal extends into the pores, and the metal layer is then chemically mechanically polished or etched back to expose top portions of the nanopore array. The polishing or etch back step leaves discrete metal islands in the nanopores, separated by the metal oxide nanopore array transparent regions.
  • a flat or textured dielectric layer or layers with a variable refractive index may be used for plasmon coupling.
  • a variable refractive index in a flat dielectric layer or layers may be achieved by periodically or quasi-periodically modulating the composition of the layer or layers along their width on the metal islands.
  • Any suitable dielectric material many be used, such as silica, quartz, alumnia, silicon nitride, polymer material, etc.
  • Dielectric modulation (instead of or in addition to metal surface corrugation) may be used in wavelength tunable structures.
  • the non-metal topography may also be used on metal films having one or more apertures.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Optics & Photonics (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
PCT/US2004/023499 2003-08-06 2004-07-22 Surface plasmon-enhanced nano-optic devices and methods of making same Ceased WO2005017570A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006522587A JP2007501391A (ja) 2003-08-06 2004-07-22 表面プラズモンを増強するナノ光学素子及びこの製造方法
EP04778827A EP1661182A4 (en) 2003-08-06 2004-07-22 SURFACE PLASMON EXPANDED NANOOPTICS DEVICES AND METHOD FOR THE PRODUCTION THEREOF
US10/566,946 US7456383B2 (en) 2003-08-06 2004-07-22 Surface plasmon-enhanced nano-optic devices and methods of making same
US11/345,673 US7420156B2 (en) 2003-08-06 2006-02-02 Metal nanowire based bandpass filter arrays in the optical frequency range
US12/274,748 US20090073434A1 (en) 2003-08-06 2008-11-20 Surface plasmon-enhanced nano-optic devices and methods of making same

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US49295403P 2003-08-06 2003-08-06
US49295503P 2003-08-06 2003-08-06
US49295603P 2003-08-06 2003-08-06
US60/492,954 2003-08-06
US60/492,956 2003-08-06
US60/492,955 2003-08-06

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/345,673 Continuation-In-Part US7420156B2 (en) 2003-08-06 2006-02-02 Metal nanowire based bandpass filter arrays in the optical frequency range
US12/274,748 Continuation US20090073434A1 (en) 2003-08-06 2008-11-20 Surface plasmon-enhanced nano-optic devices and methods of making same

Publications (2)

Publication Number Publication Date
WO2005017570A2 true WO2005017570A2 (en) 2005-02-24
WO2005017570A3 WO2005017570A3 (en) 2005-12-22

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PCT/US2004/023499 Ceased WO2005017570A2 (en) 2003-08-06 2004-07-22 Surface plasmon-enhanced nano-optic devices and methods of making same

Country Status (5)

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US (2) US7456383B2 (enExample)
EP (1) EP1661182A4 (enExample)
JP (1) JP2007501391A (enExample)
KR (1) KR20060130543A (enExample)
WO (1) WO2005017570A2 (enExample)

Cited By (45)

* Cited by examiner, † Cited by third party
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JP2006330105A (ja) * 2005-05-23 2006-12-07 Ricoh Co Ltd 偏光制御素子および偏光制御素子の偏光制御方法
JP2006330106A (ja) * 2005-05-23 2006-12-07 Ricoh Co Ltd 偏光制御素子
JP2006330108A (ja) * 2005-05-23 2006-12-07 Ricoh Co Ltd 偏光制御素子
JP2006330107A (ja) * 2005-05-23 2006-12-07 Ricoh Co Ltd 偏光制御素子および光学素子
WO2007011876A1 (en) * 2005-07-15 2007-01-25 President And Fellows Of Harvard College Surface plasmon enhanced illumination apparatus having non-periodic resonance configurations
WO2006102275A3 (en) * 2005-03-21 2007-02-22 Univ Florida Multi-layer subwavelength structures for imparting controllable phase delay
WO2007010074A3 (es) * 2005-07-22 2007-05-03 Univ Valencia Politecnica Demultiplexador óptico
JP2007163181A (ja) * 2005-12-09 2007-06-28 Advantest Corp 測定用構造体、測定装置、方法およびプログラム
JP2007163170A (ja) * 2005-12-09 2007-06-28 Advantest Corp 収容型構造体、測定装置、方法およびプログラム
EP1813932A1 (en) * 2006-01-31 2007-08-01 Agilent Technologies, Inc. Tiled periodic metal film sensors
JP2007264610A (ja) * 2006-02-28 2007-10-11 Canon Inc 光透過装置の設計方法、光学素子、撮像素子、光スイッチング素子、及び化学センサ装置
JP2007322219A (ja) * 2006-05-31 2007-12-13 Univ Of Tokyo アミノ基を有する被膜を表面に有する基体の製造方法
US7351374B2 (en) 2000-10-17 2008-04-01 President And Fellows Of Harvard College Surface plasmon enhanced illumination apparatus having non-periodic resonance configurations
JP2008180702A (ja) * 2006-12-27 2008-08-07 Canon Inc 光学素子、センサ装置及びセンシング方法
US7426040B2 (en) 2004-08-19 2008-09-16 University Of Pittsburgh Chip-scale optical spectrum analyzers with enhanced resolution
JP2009503548A (ja) * 2005-08-02 2009-01-29 ユニバーシティ・オブ・ユタ・リサーチ・ファウンデイション 金属ナノキャビティを含むバイオセンサー
DE102007059621A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Verfahren zum Erzeugen von linear polarisiertem Licht und strahlungsemittierende Bauelemente
EP2045659A1 (en) * 2007-10-01 2009-04-08 Samsung Electronics Co., Ltd. Method of nano-patterning using surface plasmon effect and method of manufacturing nano-imprint master and discrete track magnetic recording media using the nano-patterning method
JP2009520201A (ja) * 2005-12-20 2009-05-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ グリッド及び偏光子で構成された一次元のサブ回折限界の開口を備えたバイオセンサー
JP2009540312A (ja) * 2006-06-12 2009-11-19 コミツサリア タ レネルジー アトミーク 近接場透過で作動する光学部品
EP2146229A1 (en) * 2008-07-18 2010-01-20 Ricoh Company, Ltd. Optical element, refractive index sensor, refractive index sensor array, and biosensor
JP2010510511A (ja) * 2006-11-21 2010-04-02 サントル ナシオナル ドゥ ラ ルシェルシェサイアンティフィク（セエヌエールエス） 標的粒子の放射の検出を向上させる装置
US7705280B2 (en) 2006-07-25 2010-04-27 The Board Of Trustees Of The University Of Illinois Multispectral plasmonic crystal sensors
JP2010513909A (ja) * 2006-12-21 2010-04-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 溝を有した開口バイオセンサ
WO2012035110A1 (fr) * 2010-09-17 2012-03-22 Office National D'etudes Et De Recherches Aérospatiales (Onera) Filtre spectral passe bande à forte sélectivité et polarisation contrôlée
WO2013021197A1 (en) * 2011-08-08 2013-02-14 Nottingham Trent University Surface plasmon resonance in thin films
EP2672254A1 (en) * 2012-06-08 2013-12-11 The European Union, represented by the European Commission SPR biochips for label-free analysis of complex biological and chemical samples and method of multiplex analysis
US8711463B2 (en) 2010-12-30 2014-04-29 Samsung Electronics Co., Ltd. Light modulators and optical apparatuses including the same
JP2014102259A (ja) * 2014-03-05 2014-06-05 Koninklijke Philips Nv マルチレイヤ基板構造を用いた発光センサ
US9257662B2 (en) 2011-10-03 2016-02-09 Sumitomo Chemical Company, Limited Quantum dot light-emitting device
US9263630B2 (en) 2012-03-27 2016-02-16 Sumitomo Chemical Company, Limited Inorganic layer light-emitting device
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EP1661182A4 (en) 2011-03-23
EP1661182A2 (en) 2006-05-31
US7456383B2 (en) 2008-11-25
JP2007501391A (ja) 2007-01-25
KR20060130543A (ko) 2006-12-19
US20090073434A1 (en) 2009-03-19
WO2005017570A3 (en) 2005-12-22

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