WO2003017648A2 - Doubling of speed in cmos sensor with column-parallel adcs - Google Patents

Doubling of speed in cmos sensor with column-parallel adcs Download PDF

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Publication number
WO2003017648A2
WO2003017648A2 PCT/US2002/026061 US0226061W WO03017648A2 WO 2003017648 A2 WO2003017648 A2 WO 2003017648A2 US 0226061 W US0226061 W US 0226061W WO 03017648 A2 WO03017648 A2 WO 03017648A2
Authority
WO
WIPO (PCT)
Prior art keywords
plurahty
coupled
circuit
digitization
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/026061
Other languages
English (en)
French (fr)
Other versions
WO2003017648A3 (en
Inventor
Eric Hanson
Alexander Krymski
Konstantin Postinikov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to KR1020047002359A priority Critical patent/KR100886308B1/ko
Priority to EP02761388A priority patent/EP1428380A2/en
Priority to JP2003521608A priority patent/JP4532899B2/ja
Publication of WO2003017648A2 publication Critical patent/WO2003017648A2/en
Publication of WO2003017648A3 publication Critical patent/WO2003017648A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767Horizontal readout lines, multiplexers or registers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Definitions

  • the present invention relates to imaging systems. More specifically, the
  • present invention is related to an architecture for high speed analog to digital conversion
  • FIG. 1 is an illustration of a CMOS active pixel sensor (APS) imaging system
  • the system 100 includes a pixel array 110, shown in Fig. 3 as including a row
  • system 100 is a color system, the pixels P would be made sensitive to the
  • alternating rows are comprised of alternating green and red pixels and alternating
  • Fig. 2 illustrates one exemplary architecture for a pixel P.
  • the pixel P includes
  • photodiode 210 which converts optical energy into an electrical signal.
  • the photodiode 210 is coupled to node-A, which is also coupled to a
  • the transistor 220 has another source/drain terminal of transistor 220.
  • the transistor 220 has another source/drain
  • Node -A is coupled to the gate of a source following transistor 230, which has one
  • source/drain terminal coupled to the Ndd potential source and another source/drain
  • 240 has its gate coupled to a ROW control signal, and its other source/drain terminal
  • the pixel P produces a voltage at node-A related to the brightness of the light
  • transistor 230 is coupled to the output line 250 at node-B.
  • the output line 250 is also
  • pixels including those which utilize, for example, reset transistors and output a
  • differential signal comprising a photo signal component and a reset signal component.
  • a block 130 for further processing in the digital domain (e.g., color interpolation) and storage.
  • a block 130 for further processing in the digital domain (e.g., color interpolation) and storage.
  • control circuit 140 coordinates the activities of the pixel array 110, analog processing and
  • FIG. 3 is a more detailed diagram of the pixel array 110 and the analog
  • the pixel array 110 includes an array 111
  • the row decoder 112 receives a row address from, for
  • the row decoder 112 decodes the row
  • Each analog processing and digitizing circuit 120b, 120t is contain a plurality
  • sample-and-hold circuits 121 and an analog-to-digital converters 123.
  • sample-and-hold circuits 121 in the bottom circuit 120b are
  • sample-and-hold circuit 121 is also coupled to signal line 122b (for bottom circuit 120b)
  • control signal SHEb and SHEt determines when the sample-and-hold circuits
  • Each sample-and-hold circuit 121 is associated with a corresponding analog-
  • Each analog-to-digital converter 123 accepts as its input, the
  • signal line 124b accepts, on signal line 124b (for bottom circuit 120b) or signal line 124t (for top
  • top circuits 120b to sample-and-hold their corresponding pixels signals.
  • analog-to-digital converters 124 the analog-to-digital converters 124.
  • pixels are converted into a digital signal.
  • the ADEb and ADEt signals then go back low.
  • each pixel P in the array 110 has been processed and the process may be
  • the present invention is directed to a high speed architecture for performing
  • the pixel array is
  • top and bottom analog processing and digitization circuits associated with a top and bottom analog processing and digitization circuits.
  • bottom circuits are each coupled to both even and odd pixels.
  • FIG. 1 is a block diagram of a prior art image processing system
  • FIG. 2 is a block diagram of a prior art pixel for using in the image processing
  • FIG. 3 is a detailed block diagram of the pixel array and the bottom and top
  • FIG. 4 is a timing diagram showing the operation of the apparatus illustrated
  • FIG. 5 is a block diagram of an image processing system according to the
  • FIG. 6 is a block diagram of a pixel array and analog processing
  • FIG. 7 is a timing diagram showing the operation of the apparatus illustrated
  • FIG. 8 is a detailed block diagram of a holographic storage device using the
  • FIG. 5 an portion of an imaging system 500 incorporating the
  • the imaging system includes a modified pixel array
  • circuits 120a', 120b' While the description of the invention uses terms such as “top” and
  • the imaging system also includes a
  • digital processing and storage system 130 As with imaging system 100 of Fig. 1, the pixels
  • analog processing and digitizing circuits 120a', 120b' and further processed and stored in
  • 120a' 120b' are coupled to the digital processing and storage system via data bus 181.
  • a controller 140 is coupled to the analog processing and digitizing circuits 120a',
  • a single bus may be used to carry both data and control
  • control and/or data signals may be routed by point-to-point links as
  • the sample-and-hold circuits 121 are each coupled to an output line 250
  • circuits 121 of both analog processing and digitizing circuits 120a', 120b' are coupled to
  • Each column also has a sample-
  • Each sample-and-hold circuit 121 is also coupled to
  • control signals SHEa, SHEb determines when
  • the sample-and-hold circuit 121 samples-and-holds its input signal.
  • Each analog-to-digital converter 123 accepts as its input, the
  • Each analog- to-digital converter 123 Each analog- to-digital converter 123
  • the other signal lines 260 are also set to a low logical state. This is reflected
  • the SHEa signal which was low, is also driven high.
  • the SHEb signal is also driven high.
  • circuit 140 sends a new row address to the row decoder 112.
  • the APEa and SHEb signals are driven high.
  • circuit 140 sends another row address to the row decoder 112.
  • control signals SHEa and ADEb are both driven high. This causes the sample-and-
  • circuit 140 sends another row to the row address decoder 112.
  • Control signals APEa and SHEb are both driven high, thereby permitting the
  • processing and digitization circuits 120a', 120b' to become capable of receiving signals
  • Processing throughput is doubled by using one of the
  • Fig. 8 is an
  • the holographic memory system 800 includes a laser
  • the reference beam is focused using
  • controllable optics path 802 to form a focused beam R', which illuminates a holographic
  • the holographic recording medium in response to the focused
  • a controller 805 coordinates the operation of the laser 801, controllable optics 802, positioning of the holographic recording medium 803,
  • FIG. 9 is an illustration of a modified analog processing and digitizing
  • circuit 120a The modified circuit 120a, which is designed to be operated in
  • circuit 120b' now utilizes
  • the original circuits 121, 123 are respectively controlled by control
  • control signals SHEa2 and ADEa2 are controlled by control signals SHEa2 and ADEa2.
  • the row decoder is operated at double speed and
  • the two sets of circuits 121, 123 are operated in an interleaved fashion. In this manner, the
  • speed of the imaging system may be doubled, or further increased (based on the degree of

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Analogue/Digital Conversion (AREA)
  • Solid State Image Pick-Up Elements (AREA)
PCT/US2002/026061 2001-08-17 2002-08-16 Doubling of speed in cmos sensor with column-parallel adcs Ceased WO2003017648A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020047002359A KR100886308B1 (ko) 2001-08-17 2002-08-16 고체 상태 이미저의 판독 속도를 증가시키는 이미징 시스템, 이미징 시스템의 동작 방법 및 홀로그래픽 메모리 시스템
EP02761388A EP1428380A2 (en) 2001-08-17 2002-08-16 Doubling of speed in cmos sensor with column-parallel adcs
JP2003521608A JP4532899B2 (ja) 2001-08-17 2002-08-16 列並列adcを有するcmosセンサにおける倍速化

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31311701P 2001-08-17 2001-08-17
US60/313,117 2001-08-17

Publications (2)

Publication Number Publication Date
WO2003017648A2 true WO2003017648A2 (en) 2003-02-27
WO2003017648A3 WO2003017648A3 (en) 2003-05-01

Family

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Family Applications (1)

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PCT/US2002/026061 Ceased WO2003017648A2 (en) 2001-08-17 2002-08-16 Doubling of speed in cmos sensor with column-parallel adcs

Country Status (6)

Country Link
US (1) US7565033B2 (enExample)
EP (1) EP1428380A2 (enExample)
JP (2) JP4532899B2 (enExample)
KR (1) KR100886308B1 (enExample)
CN (2) CN1252987C (enExample)
WO (1) WO2003017648A2 (enExample)

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US7746399B2 (en) 2003-04-28 2010-06-29 Olympus Corporation Image pick-up device

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US7796164B2 (en) 2004-06-17 2010-09-14 Advantest Corporation Signal reading apparatus and test apparatus

Also Published As

Publication number Publication date
JP2007243930A (ja) 2007-09-20
CN1746796A (zh) 2006-03-15
JP4521411B2 (ja) 2010-08-11
WO2003017648A3 (en) 2003-05-01
CN1568613A (zh) 2005-01-19
KR20040030972A (ko) 2004-04-09
US20030043089A1 (en) 2003-03-06
JP4532899B2 (ja) 2010-08-25
JP2005518688A (ja) 2005-06-23
EP1428380A2 (en) 2004-06-16
CN100480897C (zh) 2009-04-22
KR100886308B1 (ko) 2009-03-04
CN1252987C (zh) 2006-04-19
US7565033B2 (en) 2009-07-21

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