WO2003017383A1 - Semiconductor device and method of its manufacture - Google Patents

Semiconductor device and method of its manufacture Download PDF

Info

Publication number
WO2003017383A1
WO2003017383A1 PCT/JP2001/006973 JP0106973W WO03017383A1 WO 2003017383 A1 WO2003017383 A1 WO 2003017383A1 JP 0106973 W JP0106973 W JP 0106973W WO 03017383 A1 WO03017383 A1 WO 03017383A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
manufacture
positive electrode
diffusion layer
planar face
Prior art date
Application number
PCT/JP2001/006973
Other languages
English (en)
French (fr)
Inventor
Josuke Nakata
Original Assignee
Josuke Nakata
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Josuke Nakata filed Critical Josuke Nakata
Priority to PCT/JP2001/006973 priority Critical patent/WO2003017383A1/ja
Priority to KR10-2003-7004323A priority patent/KR20030086573A/ko
Priority to CA002456679A priority patent/CA2456679C/en
Priority to CNA018173640A priority patent/CN1470080A/zh
Priority to JP2003522185A priority patent/JP4113118B2/ja
Priority to US10/485,843 priority patent/US7238968B2/en
Priority to EP01955695A priority patent/EP1427027A4/en
Priority to AU2001277779A priority patent/AU2001277779B2/en
Priority to TW091100103A priority patent/TW530326B/zh
Publication of WO2003017383A1 publication Critical patent/WO2003017383A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1017—Shape being a sphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Photovoltaic Devices (AREA)
PCT/JP2001/006973 2001-08-13 2001-08-13 Semiconductor device and method of its manufacture WO2003017383A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
PCT/JP2001/006973 WO2003017383A1 (en) 2001-08-13 2001-08-13 Semiconductor device and method of its manufacture
KR10-2003-7004323A KR20030086573A (ko) 2001-08-13 2001-08-13 반도체 디바이스 및 그 제조 방법
CA002456679A CA2456679C (en) 2001-08-13 2001-08-13 Semiconductor device and making method thereof
CNA018173640A CN1470080A (zh) 2001-08-13 2001-08-13 半导体器件及其制造方法
JP2003522185A JP4113118B2 (ja) 2001-08-13 2001-08-13 半導体デバイス及びその製造方法
US10/485,843 US7238968B2 (en) 2001-08-13 2001-08-13 Semiconductor device and method of making the same
EP01955695A EP1427027A4 (en) 2001-08-13 2001-08-13 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
AU2001277779A AU2001277779B2 (en) 2001-08-13 2001-08-13 Semiconductor device and method of its manufacture
TW091100103A TW530326B (en) 2001-08-13 2002-01-07 Semiconductor device and method of its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/006973 WO2003017383A1 (en) 2001-08-13 2001-08-13 Semiconductor device and method of its manufacture

Publications (1)

Publication Number Publication Date
WO2003017383A1 true WO2003017383A1 (en) 2003-02-27

Family

ID=11737638

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/006973 WO2003017383A1 (en) 2001-08-13 2001-08-13 Semiconductor device and method of its manufacture

Country Status (9)

Country Link
US (1) US7238968B2 (ja)
EP (1) EP1427027A4 (ja)
JP (1) JP4113118B2 (ja)
KR (1) KR20030086573A (ja)
CN (1) CN1470080A (ja)
AU (1) AU2001277779B2 (ja)
CA (1) CA2456679C (ja)
TW (1) TW530326B (ja)
WO (1) WO2003017383A1 (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
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WO2004095590A1 (ja) * 2003-04-21 2004-11-04 Kyosemi Corporation 自発光装置
WO2005041312A1 (ja) * 2003-10-24 2005-05-06 Kyosemi Corporation 受光又は発光モジュールシート及びその製造方法
JP2006245134A (ja) * 2005-03-01 2006-09-14 Clean Venture 21:Kk 光電変換装置およびその光電変換素子の製造方法
JP2007534151A (ja) * 2003-10-02 2007-11-22 ショイテン グラースグループ 集積した半導体素子を有する太陽電池の直列接続部、その作成方法、及び、直列接続部を有するモジュール
WO2007144944A1 (ja) * 2006-06-14 2007-12-21 Kyosemi Corporation ロッド形半導体デバイス
WO2008004277A1 (en) * 2006-07-04 2008-01-10 Kyosemi Corporation Panel-shaped semiconductor module
WO2008004304A1 (en) * 2006-07-07 2008-01-10 Kyosemi Corporation Panel-shaped semiconductor module
WO2008018116A1 (en) * 2006-08-07 2008-02-14 Kyosemi Corporation Semiconductor module for power generation or light emission
WO2008059593A1 (fr) 2006-11-17 2008-05-22 Kyosemi Corporation Dispositif de cellule solaire superposée
WO2010070714A1 (ja) 2008-12-19 2010-06-24 京セミ株式会社 太陽電池モジュール及びその製造方法
JP2012256707A (ja) * 2011-06-08 2012-12-27 Ulvac Japan Ltd マスク形成方法
JP2013008753A (ja) * 2011-06-22 2013-01-10 Ulvac Japan Ltd 球状光電変換素子の製造方法。
JP2014175536A (ja) * 2013-03-11 2014-09-22 Toyota Industries Corp 太陽電池モジュール
JP2014179372A (ja) * 2013-03-13 2014-09-25 Kitagawa Kogyo Co Ltd 熱電変換モジュール

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AU2001277779B2 (en) 2001-08-13 2005-04-07 Sphelar Power Corporation Semiconductor device and method of its manufacture
AU2001277778B2 (en) * 2001-08-13 2005-04-07 Sphelar Power Corporation Light-emitting or light-receiving semiconductor module and method of its manufacture
KR100619614B1 (ko) * 2001-10-19 2006-09-01 죠스케 나카다 발광 또는 수광용 반도체 모듈 및 그 제조 방법
WO2004001858A1 (ja) 2002-06-21 2003-12-31 Josuke Nakata 受光又は発光用デバイスおよびその製造方法
DE60326666D1 (de) * 2003-06-09 2009-04-23 Kyosemi Corp Generatorsystem
JP4031784B2 (ja) * 2004-07-28 2008-01-09 シャープ株式会社 発光モジュールおよびその製造方法
JP4141467B2 (ja) * 2005-10-06 2008-08-27 独立行政法人 宇宙航空研究開発機構 球状シリコン単結晶の製造方法及び装置
KR100726139B1 (ko) * 2006-01-05 2007-06-12 루미마이크로 주식회사 측면형 발광다이오드 패키지 및 그 제조방법
WO2007080631A1 (ja) * 2006-01-11 2007-07-19 Kyosemi Corporation 受光又は発光用半導体モジュール
JP5493302B2 (ja) * 2007-07-19 2014-05-14 三菱化学株式会社 Ｉｉｉ族窒化物半導体基板およびその洗浄方法
KR100927421B1 (ko) * 2007-12-17 2009-11-19 삼성전기주식회사 구형 표면을 갖는 태양전지 및 그 제조방법
TWI382188B (zh) * 2008-12-16 2013-01-11 China Steel Corp Method for the detection of aluminum for solar cells
US9099578B2 (en) 2012-06-04 2015-08-04 Nusola, Inc. Structure for creating ohmic contact in semiconductor devices and methods for manufacture
WO2014145300A2 (en) * 2013-03-15 2014-09-18 Nusola Inc. Pin photovoltaic cell and process of manufacture
TWI590433B (zh) * 2015-10-12 2017-07-01 財團法人工業技術研究院 發光元件以及顯示器的製作方法
WO2021232414A1 (zh) * 2020-05-22 2021-11-25 重庆康佳光电技术研究院有限公司 球形倒装微型led及其制造方法、显示面板
CN113690372A (zh) * 2021-09-10 2021-11-23 华能新能源股份有限公司 一种钙钛矿太阳能电池及其制备方法

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CA2456679A1 (en) 2003-02-27
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AU2001277779B2 (en) 2005-04-07
US7238968B2 (en) 2007-07-03
KR20030086573A (ko) 2003-11-10
CA2456679C (en) 2009-12-29
JP4113118B2 (ja) 2008-07-09
EP1427027A1 (en) 2004-06-09
TW530326B (en) 2003-05-01
EP1427027A4 (en) 2006-12-20

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