JP4948535B2 - パネル形半導体モジュール - Google Patents
パネル形半導体モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 195
- 229910052751 metal Inorganic materials 0.000 claims description 115
- 239000002184 metal Substances 0.000 claims description 115
- 239000000463 material Substances 0.000 claims description 57
- 239000010410 layer Substances 0.000 claims description 41
- 229920003002 synthetic resin Polymers 0.000 claims description 23
- 239000000057 synthetic resin Substances 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 239000012809 cooling fluid Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229920002379 silicone rubber Polymers 0.000 description 9
- 239000004945 silicone rubber Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
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Description
一方、砒化ガリウム(GaAs)のように高価な化合物半導体を用いた太陽電池では、外部レンズ等で集光する方が経済的であるとされ多くの文献に提案されている。
光反射式の集光機構を採用する場合には、太陽電池セルの温度上昇が大きくなるので、太陽電池セルを効果的に冷却する冷却機構が必要になるが、部分球面的な反射面を採用する場合には、冷却用流体を流す流路形状を滑らかに構成することが難しく、冷却性能を高めることが容易ではない。
しかも、半導体素子は、反射面形成溝の底板部の中央部に突出した取付台部に載置してあるため、底板部で反射した光を半導体素子の下半部へ入射させることができる。
(1)前記フィンガーリードは、傾斜板部の上半部に形成された切り起し片の下端部をほぼ直角に折り曲げることにより形成された。
(2)前記内装金属ケースの各分断スリットは、各行の複数の半導体素子の第1,第2電極の一方を前記取付台に接続し且つ第1,第2電極の他方をフィンガーリードに接続後に、複数のタイバー部を打ち抜いて連続する分断スリットに形成される。
(4)前記(3)において、外装金属ケースの行方向の両端部には、内装金属ケースの端部よりも所定長さ行方向外側まで延びる延長部が形成され、この延長部に形成されるケース収容溝に絶縁材料製の側栓ブロックが内嵌装着して固定された。
(6)前記(4)において、内装金属ケースの上面側を覆う透明なガラス製又は合成樹脂製のカバー部材であって、内装金属ケースと前記側栓ブロックに固着されたカバー部材を設けた。
(8)前記(3)において、前記外装金属ケースの外面側に冷却用流体を流す為の通路を形成するダクト部材を設けた。
(9)この半導体素子の表面のうち、第1,第2電極を除く表面部分に、反射防止膜が形成された。
(11)前記半導体素子の基材がn形のSi単結晶又はSi多結晶で構成され、前記別導電層がp形不純物としてのB又はGa又はAlを拡散して構成され、前記半導体素子が太陽電池セルに構成された
(12)前記半導体素子が発光機能のある発光ダイオード素子に構成された。
1 半導体素子
2 導電接続機構
3 内装金属ケース
4 外装金属ケース
4A 延長部
5 カバー部材
5a 円筒レンズ部
6 絶縁性合成樹脂材
7 合成樹脂層
8 側栓ブロック
11 基材
12 拡散層
13 pn接合
14 正電極
15 負電極
16 反射防止膜
20 反射面形成溝
21 底板部
21a 取付台部
22,23 傾斜板部
25,25A フィンガーリード
26 分断スリット
35 ダクト部材
40 発光用半導体素子(発光ダイオード素子)
41 基材
42 拡散層
43 pn接合
44 正電極
45 負電極
46 反射防止膜
各分断スリット26は、各行の複数の半導体素子1の正電極14を取付台部21aに接着し且つ負電極15をフィンガーリード25に接着後に、複数のタイバー打抜き部26aの所のタイバー部(図示略)を打ち抜いて連続する分断スリット26に形成される。
図2に示すように、内装金属ケース3の各反射面形成溝20に柔軟性のある透明なシリコーンゴムからなる絶縁性合成樹脂材6が、半導体素子1とフィンガーリード25を埋め込む状態に充填され、その後減圧下で脱泡してから合成樹脂材6がキュアされる。
図1〜図5に示すように、内装金属ケース3の左右の両端部には、複数の太陽電池モジュールMを電気的に接続したり、出力取出し用結線を連結する為の端子としての外部へ露出状の連結端子板3aが、行方向の全長に延びるように形成され、各連結端子板3aには複数のボルト穴31が形成されている。
この太陽電池モジュールMに採用したロッド形の半導体素子1は、軸心に対してほぼ対称性を有し、種々の方向(約270度の方向)からの太陽光を受光できるから、広い角度で受光感度を有する。内装金属ケース3は、開口部から底部に向かって溝幅がリニアに減少する複数の反射面形成溝20を備え、各反射面形成溝20の底部に各行の複数の半導体素子1が組み込まれ、反射面形成溝20の内面は光反射面に形成されている。それ故、太陽光は、反射面形成溝20の内面で多重反射を繰り返して半導体素子1に集中する。
反射面形成溝20の片方の傾斜板部23に各半導体素子1に対応するフィンガーリード25を一体的に形成し、このフィンガーリード25を半導体素子1の負電極15に導電性エポキシ樹脂で接着するため、別個の接続リードを省略できる。
1)図12に示すように、前記フィンガーリード25に代えて、内装金属ケース3とは別体の接続片50であって鉄・ニッケル合金などの導電性薄金属板を打ち抜き加工して形成した接続片50を、半導体素子1に対応する位置に設け、接続片50の下部に左方へ水平に延びるフィンガーリード25Aを形成する。
図14、図15に示すように、発光用半導体素子40は、n形半導体結晶からなるロッド形の基材41と、この基材41の表層部に形成されたp形の拡散層42(基材と異なる導電形の別導電層に相当する)と、基材41と拡散層42とで形成されたほぼ円筒形のpn接合43と、正負の電極44,45と、反射防止膜46とを有する。
この発光ダイオードモジュールは、医療機器や種々の赤外線センサや赤外線照明の光源などの産業分野の赤外線発生装置として活用することができる。
1)この発光ダイオードモジュールにおいても、前記太陽電池モジュールMaと同様のダクト部材を設けてもよい。
また、発光用半導体素子のpn接合は、拡散層により形成するとは限らず、基材の表層部への成膜やイオン注入により、基材の導電形と異なる導電形の別導電層を形成することによっても形成することができる。
Claims (13)
- 受光又は発光機能のあるパネル形半導体モジュールにおいて、
受光又は発光機能と軸心を有する複数のロッド形の半導体素子であって、導電方向を揃え且つ軸心を行方向に向けて複数行複数列に配置された複数の半導体素子と、
各行の複数の半導体素子を電気的に並列接続し且つ各列の複数の半導体素子を電気的に直列接続する導電接続機構と、
前記複数の半導体素子が装着され且つ前記導電接続機構を構成する導電性の内装金属ケースとを備え、
複数の半導体素子の各々は、
p形又はn形の半導体結晶からなるロッド形の基材と、
この基材の表層部の帯状部分以外の部分に形成された基材と異なる導電形の別導電層と、前記基材と別導電層とで形成されたほぼ円筒形のpn接合と、
前記基材の軸心を挟んだ両側の表面部分に軸心と平行に帯状に形成され且つ前記基材の前記帯状部分および別導電層に夫々オーミック接続された第1,第2電極とを備え、
前記内装金属ケースは、各行の複数の半導体素子を夫々収容する複数の反射面形成溝であって、開口部から底部に向かって溝幅が減少する複数の反射面形成溝を備え、
各反射面形成溝は、光反射可能な底板部とこの底板部の端部から上方へ一体的に延びる光反射可能な1対の傾斜板部とで構成され、
前記各底板部の幅方向中央部に取付台部が突出状に形成されると共に、その取付台部に対応行の複数の半導体素子が載置され且つそれら半導体素子の第1,第2電極の一方が電気的に接続され、
各反射面形成溝の一方の傾斜板部に電気的に接続され且つ対応行の複数の半導体素子の第1,第2電極の他方に電気的に夫々接続された金属製の複数のフィンガーリードが形成され、前記各底板部のうちの取付台部の片側部位に、対応行の複数の半導体素子の第1,第2電極を短絡する導電部分を分断する為の分断スリットが、行方向の全長に亙って形成された、ことを特徴とするパネル形半導体モジュール。 - 前記フィンガーリードは、傾斜板部の上半部に形成された切り起し片の下端部をほぼ直角に折り曲げることにより形成されたことを特徴とする請求項1に記載のパネル形半導体モジュール。
- 前記内装金属ケースの各分断スリットは、各行の複数の半導体素子の第1,第2電極の一方を前記取付台部に接続し且つ第1,第2電極の他方をフィンガーリードに接続後に、複数のタイバー部を打ち抜いて連続する分断スリットに形成されることを特徴とする請求項2に記載のパネル形半導体モジュール。
- 前記内装金属ケースの下面側に外嵌状に装着される外装金属ケースであって、内装金属ケースとほぼ相似の断面形状を有する外装金属ケースと、前記内装金属ケースと外装金属ケースの間に電気絶縁性合成樹脂層とを設け、この電気絶縁性合成樹脂層を介して内装金属ケースと外装金属ケースとを一体的に固着したことを特徴とする請求項1〜3の何れかに記載のパネル形半導体モジュール。
- 前記外装金属ケースの行方向の両端部には、内装金属ケースの端部よりも所定長さ行方向外側まで延びる延長部が形成され、この延長部に形成されるケース収容溝に絶縁材料製の側栓ブロックが内嵌装着して固定されたことを特徴とする請求項4に記載のパネル形半導体モジュール。
- 前記内装金属ケースの反射面形成溝に柔軟性のある透明な絶縁性合成樹脂材が、前記半導体素子と前記フィンガーリードを埋め込む状態に充填されたことを特徴とする請求項5に記載のパネル形半導体モジュール。
- 前記内装金属ケースの上面側を覆う透明なガラス製又は合成樹脂製のカバー部材であって、内装金属ケースと前記側栓ブロックに固着されたカバー部材を設けたことを特徴とする請求項5に記載のパネル形半導体モジュール。
- 前記カバー部材には、複数行の半導体素子に夫々対応する複数の円筒レンズ部を形成したことを特徴とする請求項7に記載のパネル形半導体モジュール。
- 前記外装金属ケースの外面側に冷却用流体を流す為の通路を形成するダクト部材を設けたことを特徴とする請求項4に記載のパネル形半導体モジュール。
- 前記半導体素子の表面のうち、第1,第2電極を除く表面部分に、反射防止膜が形成されたことを特徴とする請求項1〜3の何れかに記載のパネル形半導体モジュール。
- 前記半導体素子の基材がp形のSi単結晶又はSi多結晶で構成され、前記別導電層がn形不純物としてのP又はSb又はAsを拡散して構成され、前記半導体素子が太陽電池セルに構成されたことを特徴とする請求項1〜3の何れかに記載のパネル形半導体モジュール。
- 前記半導体素子の基材がn形のSi単結晶又はSi多結晶で構成され、前記別導電層がp形不純物としてのB又はGa又はAlを拡散して構成され、前記半導体素子が太陽電池セルに構成されたことを特徴とする請求項1〜3の何れかに記載のパネル形半導体モジュール。
- 前記半導体素子が発光機能のある発光ダイオード素子に構成されたことを特徴とする請求項1〜3の何れかに記載のパネル形半導体モジュール。
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TWI590433B (zh) * | 2015-10-12 | 2017-07-01 | 財團法人工業技術研究院 | 發光元件以及顯示器的製作方法 |
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CA2654941C (en) | 2013-01-08 |
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