KR970705831A - 결정성 반도체막 형성방법, 박막 트랜지스터 제조방법, 태양 전지 제조 방법 및 액티브 매트릭스형 액정 장치 (A method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and a method for fabricating solar cells and active matrix liquid crystal devices) - Google Patents

결정성 반도체막 형성방법, 박막 트랜지스터 제조방법, 태양 전지 제조 방법 및 액티브 매트릭스형 액정 장치 (A method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and a method for fabricating solar cells and active matrix liquid crystal devices)

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Publication number
KR970705831A
KR970705831A KR1019970701411A KR19970701411A KR970705831A KR 970705831 A KR970705831 A KR 970705831A KR 1019970701411 A KR1019970701411 A KR 1019970701411A KR 19970701411 A KR19970701411 A KR 19970701411A KR 970705831 A KR970705831 A KR 970705831A
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South Korea
Prior art keywords
fabricating
liquid crystal
thin film
solar cells
active matrix
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KR1019970701411A
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English (en)
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KR100274293B1 (ko
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
KR1019970701411A 1995-06-26 1996-06-26 결정성 반도체막 형성방법, 박막 트랜지스터 제조방법, 태양 전지 제조 방법 및 액티브 매트릭스형 액정 장치 KR100274293B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP15914795 1995-06-26
JP95-159147 1995-06-26
JP16128096 1996-06-21
JP96-161280 1996-06-21
PCT/JP1996/001775 WO1997001863A1 (fr) 1995-06-26 1996-06-26 Procede de formation de film semi-conducteur cristallin, procede de production de transistor a couche mince, procede de production de cellules solaires et dispositif cristal liquide a matrice active

Publications (2)

Publication Number Publication Date
KR970705831A true KR970705831A (ko) 1997-10-09
KR100274293B1 KR100274293B1 (ko) 2001-01-15

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ID=26486031

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Application Number Title Priority Date Filing Date
KR1019970701411A KR100274293B1 (ko) 1995-06-26 1996-06-26 결정성 반도체막 형성방법, 박막 트랜지스터 제조방법, 태양 전지 제조 방법 및 액티브 매트릭스형 액정 장치

Country Status (5)

Country Link
US (3) US6066516A (ko)
JP (1) JP4026182B2 (ko)
KR (1) KR100274293B1 (ko)
CN (2) CN1089486C (ko)
WO (1) WO1997001863A1 (ko)

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