WO2001058828A1 - Substrat ceramique pour dispositif de production ou d'examen de semi-conducteurs - Google Patents
Substrat ceramique pour dispositif de production ou d'examen de semi-conducteurs Download PDFInfo
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- WO2001058828A1 WO2001058828A1 PCT/JP2001/000866 JP0100866W WO0158828A1 WO 2001058828 A1 WO2001058828 A1 WO 2001058828A1 JP 0100866 W JP0100866 W JP 0100866W WO 0158828 A1 WO0158828 A1 WO 0158828A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Definitions
- the present invention relates to a ceramic substrate for a semiconductor manufacturing / inspection apparatus mainly used in the semiconductor industry, and in particular, has a high withstand voltage, and when used for an electrostatic chuck, has an excellent silicon wafer suction ability,
- the present invention relates to a ceramic substrate which has excellent temperature rise and fall characteristics when used as a hot plate (ceramic heater) and a ceramic plate for a wafer prober.
- Semiconductors are extremely important products required in various industries.Semiconductor chips are manufactured by, for example, slicing a silicon single crystal to a predetermined thickness to produce a silicon wafer i, and then forming a plurality of silicon wafers on the silicon wafer. It is manufactured by forming an integrated circuit or the like.
- a silicon wafer placed on an electrostatic chuck is subjected to various processes such as etching and CVD to form a conductive circuit, an element, and the like.
- corrosive gases are used as the deposition gas, etching gas, etc., so that it is necessary to protect the electrostatic electrode layer from corrosion by these gases, and to induce adsorption force.
- the electrostatic electrode layer is usually covered with a ceramic dielectric film or the like.
- nitride ceramics have been used as this ceramic dielectric film.However, in the past, since the dielectric film was formed by sintering without adding an oxide or the like, it was formed inside the dielectric film. Most of the pores were open, and there were many open pores. When such pores are present, if the volume resistivity of the dielectric layer decreases at high temperature, the electrons in the pores will fly through the air in the pores due to the application of JE, causing a so-called spark. If the pore size is not reduced, the ceramic dielectric film There is a problem that it is difficult to keep the withstand voltage high.
- Japanese Patent Application Laid-Open No. Hei 5-81840 discloses an electrostatic chuck using a nitride having an extremely small pore diameter of 5 / xm or less, the maximum pore diameter.
- the present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, it has been found that sintering can be advanced by adding an oxide to a nitride ceramic and firing it, and almost all of the interconnected pores are reduced. It has been newly discovered that even when the pore diameter is large, the withstand voltage at a high temperature can be ensured even if the pore diameter is increased by forming an independent pore in the ceramic particle boundary.
- the ⁇ invention is a ceramic substrate in which a conductor is formed on the surface or a part of the ceramic substrate,
- the ceramic substrate is a ceramic substrate for a semiconductor manufacturing / inspection apparatus, wherein the ceramic substrate is made of a non-oxide ceramic containing oxygen and has a maximum pore diameter of 50 / im or less.
- the non-oxide ceramic is preferably a nitride ceramic or a carbide ceramic. 1
- the ceramic substrate preferably contains 0.05 to 10% by weight of oxygen.
- the ceramic substrate preferably has a porosity of 5% or less.
- the ceramic substrate is preferably used in a temperature range of 100 to 700 ° C. .
- the ceramic substrate preferably has a thickness of 25 mm or less and a diameter of 200 mm or more.
- FIG. 1 is a cross-sectional view schematically showing one example of the electrostatic chuck according to the present invention.
- FIG. 2 is a cross-sectional view taken along line AA of the electrostatic chuck shown in FIG.
- FIG. 3 is a cross-sectional view taken along the line BB of the electrostatic chuck shown in FIG.
- FIG. 4 is a cross-sectional view schematically showing one example of the electrostatic chuck according to the present invention.
- FIG. 5 is a cross-sectional view schematically showing one example of the electrostatic chuck according to the present invention.
- FIG. 6 is a cross-sectional view schematically showing one example of the electrostatic chuck according to the present invention.
- FIGS. 7A to 7D are cross-sectional views schematically showing a part of the manufacturing process of the electrostatic chuck according to the present invention.
- FIG. 8 is a horizontal sectional view schematically showing the shape of the electrostatic electrode constituting the electrostatic chuck according to the present invention.
- FIG. 9 is a horizontal sectional view schematically showing the shape of the electrostatic electrode constituting the electrostatic chuck according to the present invention.
- FIG. 10 is a cross-sectional view schematically showing a state where the electrostatic chuck according to the present invention is fitted into a support container.
- FIG. 11 is a cross-sectional view schematically showing a wafer prober according to the present invention.
- FIG. 12 is a cross-sectional view schematically showing a guard electrode of the wafer prober according to the present invention.
- FIG. 13 is a cross-sectional view schematically showing a hot plate according to the present invention. Explanation of reference numerals
- the ceramic substrate for a semiconductor manufacturing / inspection apparatus of the present invention is a ceramic substrate having a conductor formed on the surface of or inside the ceramic substrate,
- the ceramic substrate is made of a non-oxide ceramic containing oxygen, and has a maximum pore size of 50 / m or less.
- the pore diameter of the largest pore is 50 ⁇ or less.
- the withstand voltage at high temperatures is particularly high. Conversely, when pores are present, the toughness increases. Or either the design for this may be determined in consideration of the required properties.
- the ceramic substrate of the present invention it is preferable to use a nitride ceramic or a carbon ceramic containing oxygen. Advances sintering by containing oxygen > Since the communicating pores are almost eliminated and independent pores are formed,> the corrosive gas does not erode the conductor. In addition, the independent pores make it harder for electrons to jump in the pores than the communicating pores.
- the oxide is present at the boundaries of the ceramic particles, it is possible to ensure a withstand voltage at high temperatures even if the pore size increases.
- the maximum pore diameter needs to be 5.0 / zm or less. If the pore diameter of the largest pore exceeds 50 // m, the withstand voltage characteristics at a high temperature of 100 to 700 ° C., particularly 200 ° C. or more, cannot be secured. '
- the pore diameter of the maximum pore is desirably 10 / zm or less. This is because the amount of warpage becomes smaller at 100 to 700 ° C, especially at 2.0 or more.
- the porosity and the maximum pore size are adjusted by the pressurization time, pressure and temperature during sintering.
- nitride ceramics adjust with additives such as SiC and BN. This is because S i C and BN inhibit sintering and can introduce pores.
- the measurement of the maximum pore diameter was performed by preparing five samples, polishing the surface of the sample to a mirror surface, and photographing the surface with an electron microscope at a magnification of 200 to 500 times. U. Then, the largest pore diameter was selected in the photographed photograph, and the average of 50 shots was defined as the largest pore diameter.
- the ceramic substrate contains oxygen in an amount of 0.05 to 10% by weight, particularly preferably 0.1 to 5% by weight. 0.1 weight. If it is less than / 0 , the withstand voltage may not be able to be ensured. Conversely, if it exceeds 5% by weight, the withstand voltage may also decrease due to the decrease in the high-temperature withstand voltage characteristics of the oxide. . Also, if the oxygen content exceeds 5% by weight, the thermal conductivity may decrease, and the temperature rise / fall characteristics may decrease.
- the porosity of the ceramic substrate is desirably 5% or less. If it exceeds 5%, the number of pores increases, and the pore diameter becomes too large. As a result, pores easily communicate with each other and the withstand voltage decreases.
- the porosity is measured by the Archimedes method.
- the sintered body is pulverized and the volume of the pulverized material is measured in an organic solvent or mercury, the volume is measured, the true specific gravity is determined from the weight and volume of the pulverized material, and the porosity is calculated from the true specific gravity and the apparent specific gravity.
- the ceramic substrate is desirably used in a temperature range of 100 to 700 ° C. This is because the withstand voltage is reduced in such a temperature range, and the configuration of the present invention is particularly advantageous.
- the ceramic substrate desirably has a small amount of warpage at 100 to 700 ° C. This is because when the ceramic substrate is used for a heater / electrostatic chuck, the semiconductor wafer can be uniformly heated. When the amount of warpage is large, the semiconductor wafer does not adhere to the heating surface of the heater, so that the semiconductor wafer cannot be heated uniformly, or when the semiconductor wafer and the heating surface are heated apart from each other, This is because the distance between the semiconductor wafer and the ripened surface becomes uneven, and the semiconductor wafer cannot be ripened uniformly.
- the amount of warpage (that is, the difference in the amount of warpage before and after the temperature rise) is 7 / im or less is desirable.
- the ceramic substrate of the present invention can be used for semiconductor manufacturing and inspection, and can be used for an electrostatic chuck, a hot plate (ceramic heater), a ceramic plate for a wafer prober (hereinafter simply referred to as a wafer prober) and the like.
- the thickness of the ceramic substrate of the present invention is preferably 50 mm or less, particularly preferably 25 mm or less.
- the heat capacity of the ceramic substrate increases.
- the temperature follow-up property is reduced due to the large heat capacity. It is because.
- the problem of warping caused by the presence of pores solved by the ceramic substrate of the present invention is less likely to occur with a thick ceramic substrate having a thickness exceeding 25 mm. Especially 5 mm or less is optimal.
- the thickness is desirably 1 mm or more.
- the diameter of the ceramic substrate of the present invention is desirably 200 mm or more. Especially 12 inches
- the present invention solves the problem of warpage in a high temperature region because it is unlikely to occur with a ceramic substrate having a diameter of 20 O mtn or less.
- the ceramic substrate desirably has a plurality of through holes for inserting lifter pins of a semiconductor wafer. This is because, when the Young's modulus is lowered particularly at high temperatures due to the presence of the through holes, the strain during processing is released and warpage is likely to occur, and it is considered that the present invention is the structure that exerts the most effect.
- the nitride ceramic constituting the ceramic substrate of the present invention include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride and the like.
- the ceramic substrate of the present invention it is desirable that the ceramic substrate contains a sintering aid.
- the sintering aid an alkali metal oxide, alkaline earth metal oxides, can be used rare earth oxides, and among Me These sintering aids, in particular C a O, Y 2 0 3 , N a 20 , L i 20 and R b 20 are preferred. Also, alumina may be used. The content of these is desirably 0.1 to 20% by weight.
- the ceramic substrate of the present invention it is preferable that the ceramic substrate contains 5 to 500 ppm force. * By containing carbon, the ceramic substrate can be blackened, and radiant heat can be fully utilized when used as a ceramic heater.
- the ribbon may be amorphous or crystalline.
- amorphous carbon When amorphous carbon is used, a decrease in volume resistivity at high temperatures can be prevented, and when a crystalline material is used, a decrease in thermal conductivity at high temperatures can be prevented. Because. Therefore, depending on the application, both crystalline carbon and amorphous carbon may be used in combination. Further, the content of carbon is more preferably from 50 to 2000 ppm.
- the lightness is contained carbon so that the N 6 or less as a value under the provisions of JISZ 8 7 2 1 1 desirable.
- the lightness N is defined as 0 for the ideal black lightness, 10 for the ideal white lightness, and the lightness of the color between these black lightness and white lightness.
- Each color is divided into 10 so that the perception is at the same rate, and displayed with the symbols NO to N10.
- Measurement of the actual lightness is performed by comparing with the color chart corresponding to ⁇ ⁇ to ⁇ 10. In this case, the first decimal place is 0 or 5.
- a silicon wafer is formed on a ceramic substrate.
- the silicon wafer may be supported by a lifter pin, etc., and may be held at a certain distance from the ceramic substrate as shown in Fig. 13 is there.
- FIG. 13 is a partially enlarged cross-sectional view schematically showing a ceramic heater, which is an example of the ceramic substrate of the present invention.
- lifter pins 96 are passed through through holes 95 to hold silicon wafer 99.
- a heating element 92 is formed on the bottom surface 91 a of the ceramic substrate 91, and a metal coating layer 92 a is provided on the surface of the heating element 92.
- a bottomed hole 94 is provided, into which a thermocouple is inserted.
- the silicon wafer 99 is heated on the wafer heating surface 91b side.
- the semiconductor wafer and the heating surface can be separated.
- the separation distance is preferably 50 to 500 ⁇ .
- the present invention is particularly effective in such a case. This is because the amount of warpage of the ceramic substrate at high temperatures is small, and the distance between the semiconductor wafer and the heated surface becomes uniform.
- the conductor is a heating element, and may be a metal layer of about 0.1 to 100 ⁇ . May be.
- the conductor is an electrostatic electrode, and even if the RF electrode and the heating element are under the electrostatic electrode and formed as a conductor in the ceramic substrate. Good.
- a chuck top conductor layer is formed as a conductor on the surface, and a guard electrode and a ground electrode are formed as conductors inside.
- the ceramic substrate of the present invention is used at a temperature of 100 ° C. or higher, preferably 200 ° C. or higher.
- the present invention will be described by taking an electrostatic chuck, a wafer, and a prober having a hot plate function as examples.
- an electrostatic electrode is formed on a ceramic substrate, and the ceramic dielectric film covering the electrostatic electrode is made of a non-oxide ceramic containing oxygen, such as a nitride ceramic or a carbide ceramic. Since the porosity is 5% or less and the maximum pore diameter is 50; m or less, the pores in the dielectric film are composed of independent pores. Therefore, a gas or the like which lowers the dielectric strength JE does not permeate the ceramic dielectric film and corrode the electrostatic electrode, and the withstand voltage of the ceramic dielectric film does not decrease even at a high temperature.
- the thickness of the ceramic dielectric film is set to 50 to 500 ° im, a sufficient withstand voltage can be secured without lowering the chucker.
- FIG. 1 is a vertical sectional view schematically showing an electrostatic chuck according to an embodiment of the ceramic substrate of the present invention
- FIG. 2 is a sectional view taken along line AA of the electrostatic chuck shown in FIG.
- FIG. 3 is a sectional view taken along line BB of the electrostatic chuck shown in FIG.
- an electrostatic electrode layer including a chuck positive electrostatic layer 2 and a chuck negative electrostatic layer 3 is formed on the surface of a ceramic substrate 1 having a circular shape in a plan view.
- a ceramic dielectric film 4 made of a nitride ceramic containing oxygen is formed so as to cover the layers.
- a silicon wafer 9 is mounted on the electrostatic chuck 101 and is grounded.
- the chuck positive electrode electrostatic layer 2 includes a semicircular arc portion 2a and a comb tooth portion 2b.
- the chuck negative electrode electrostatic layer 3 also has a semicircular arc portion 3a and a comb tooth.
- the chuck positive electrode electrostatic layer 2 and the chuck negative electrode electrostatic layer 3 are arranged to face each other so as to cross the comb teeth portions 2 b and 3 b.
- the electrostatic layer I 2 and the chuck negative electrostatic layer 3 is a + side and one side of each DC power source connected, 3 ⁇ 4 current voltage V 2 is summer as is applied.
- a concentric resistance heating element 5 as shown in FIG. 3 is provided on one side of the ceramic substrate 1, and at both ends of the resistance heating element 5.
- the external terminal pin 6 is connected and fixed, and a voltage is applied.
- this ceramic substrate 1 supports a bottomed hole 11 for inserting a temperature measuring element and a silicon wafer 9 as shown in FIG. Through which a lifter pin (not shown) Through holes 12 are formed.
- the resistance heating element 5 may be formed on the bottom surface of the ceramic substrate.
- the electrostatic chuck according to the present invention has, for example, a configuration as shown in FIGS.
- FIGS. each of the members constituting the electrostatic chuck and other embodiments of the electrostatic chuck according to the present invention will be sequentially described in detail.
- the ceramic dielectric film used in the electrostatic chuck according to the present invention is preferably made of a nitride ceramic containing oxygen, and has a maximum pore diameter of 50 ⁇ m or less.
- the thickness is preferably 50 to 150 / zm, and the porosity is preferably 5% or less. .
- nitride ceramic examples include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride, and the like. Of these, aluminum nitride is most preferred. This is because the withstand voltage is high and the thermal conductivity is as high as 18 O WXm ⁇ K.
- the nitride ceramic contains oxygen. For this reason, the sintering of the nitride ceramic is facilitated, and even when the nitride ceramic contains pores, the pores become independent pores, and thus the withstand voltage is improved for the reasons described above.
- the raw material powder of the nitride ceramic is heated in oxygen or air, or the metal oxide is mixed with the raw material powder of the nitride ceramic and then fired.
- metal oxides for example, yttria (Y 2 0 3), alumina (A 1 2 0 3), rubidium oxide (R b 2 0), lithium oxide (L i 2 0), carbonate Karushiu arm (C a CO g).
- the addition amount of these metal oxides is preferably 0.1 to 10 parts by weight based on 100 parts by weight of the nitride ceramic.
- the porosity of the ceramic dielectric film is desirably 5% or less. It is desirable that the thickness is 50 to 5000 / zm and the pore diameter of the maximum pore is .50 / zm or less.
- the thickness of the above-mentioned ceramic dielectric film is less than 50 / zm, a sufficient withstand voltage cannot be obtained because the film thickness is too thin, and the ceramic dielectric film is insulated when a silicon wafer is placed and adsorbed.
- the thickness of the ceramic dielectric film exceeds 5 ⁇ ⁇ ⁇ , the distance between the silicon wafer and the electrostatic electrode is increased, and the ability to adsorb the silicon wafer is reduced.
- the thickness of the ceramic dielectric film is 100-1500 / zm.
- the above porosity is 5.
- the ratio exceeds / o, the number of pores increases and the pore diameter becomes too large. As a result, the pores easily communicate with each other. With a ceramic dielectric film having such a structure, the withstand voltage decreases.
- the porosity is more preferably 0.001 to 3%, and the pore diameter of the largest porosity is more preferably 0.1 to 10%.
- the ceramic dielectric film contains 50 to 5000 ppm of carbon. This is because the electrode pattern provided in the electrostatic chuck can be concealed and high radiation heat can be obtained. Also, the lower the volume resistivity, the higher the adsorption capacity of the silicon wafer at low temperatures.
- a certain amount of pores may be present in the ceramic dielectric film because the fracture toughness value can be increased and the thermal shock resistance is improved. can do.
- the electrostatic electrode formed on the ceramic substrate examples include a metal or conductive ceramic sintered body and a metal foil.
- the metal sintered body is preferably made of at least one selected from tungsten and molybdenum. It is desirable to be made of the same material as the metal foil or the sintered metal. These metals are relatively oxidized This is because it has sufficient conductivity as an electrode.
- the conductive ceramic at least one selected from carbides of tungsten and molybdenum can be used as the conductive ceramic.
- FIG. 8 Oyopi 9 are water 1 plan sectional view schematically showing the electrostatic electrode in the other of the electrostatic chucking, in the electrostatic chuck 2 0 shown in FIG. 8, half inside the ceramic substrate 1
- a circular chuck positive electrode electrostatic layer 22 and a chuck negative electrode electrostatic layer 23 are formed.
- the electric layers 32a and 32b and the chuck negative electrode electrostatic layers 33a and 33b are formed.
- the two positive electrode electrostatic layers 22a and 22b and the two chuck negative electrode electrostatic layers 33a and 33b are formed so as to cross each other.
- the number of divisions is not particularly limited, and may be five or more, and the shape is not limited to a sector.
- the ceramic substrate used in the electrostatic chuck according to the present invention is preferably made of a nitride ceramic or a carbide ceramic.
- nitride ceramic examples include aluminum nitride, silicon nitride, boron nitride, and titanium nitride.
- carbide ceramic examples include silicon carbide, boron carbide, titanium carbide, and tungsten carbide.
- the ceramic dielectric film and the ceramic substrate are made of the same material. This is because nitride ceramics have high thermal conductivity and can transmit heat generated by the resistance heating element well. Further, when the ceramic dielectric film and the ceramic substrate are made of the same material, an electrostatic chuck can be easily manufactured by laminating green sheets manufactured by the same method and firing them under the same conditions. . Aluminum nitride is the most preferable among the nitride ceramics. This is because the thermal conductivity is as high as 18 O WZm ⁇ K.
- the ceramic substrate contains 50 to 500 ppm of carbon. This is because high radiation heat can be obtained.
- the carbon either crystalline or amorphous which can be detected by X-ray diffraction may be used, or both crystalline and amorphous may be used.
- the electrostatic chuck according to the present invention is generally provided with a temperature control means such as a resistance heating element as shown in FIG. This is because it is necessary to perform CVD processing etc. while heating the silicon wafer placed on the electrostatic chuck.
- a Peltier element As the temperature control means, in addition to the resistance heating element 5 shown in FIG. 3, a Peltier element (see FIG. 6) can be mentioned.
- the resistance heating element may be provided inside the ceramic substrate, or may be provided on the bottom surface of the ceramic substrate.
- the support container into which the electrostatic chuck is fitted may be provided with a cooling means such as a blowing port for a refrigerant such as air.
- the resistance heating element When the resistance heating element is provided inside the ceramic substrate, a plurality of layers may be provided.
- the pattern of each layer is formed so as to complement each other, and the pattern is formed on any layer when viewed from the heating surface.
- a formed state is desirable.
- the structures are staggered with respect to each other.
- the resistance heating element examples include a sintered body of metal or conductive ceramic, a metal foil, and a metal wire.
- the metal sintered body at least one selected from tungsten and molybdenum is preferable. This is because these metals are relatively hard to oxidize and have a resistance value sufficient to generate heat.
- the conductive ceramic at least one selected from carbides of tungsten and molybdenum can be used.
- noble metals gold, silver, palladium, platinum
- nickel nickel
- silver, silver-palladium, or the like can be used.
- the metal particles used in the metal sintered body may be spherical, scaly, or a mixture of spherical and scaly.
- a metal oxide may be added to the metal sintered body.
- the use of the metal oxide is for bringing the ceramic substrate and the metal particles into close contact with each other.
- the oxide film is slightly formed on the surface of the metal particles.
- this oxide film is fired on the surface of the ceramic substrate via the metal oxide. It is thought that the metal particles and the ceramic substrate adhere closely to each other.
- the metal oxide for example, lead oxide, zinc oxide, silica, boron oxide i (B 2 0 3), alumina, yttria, at least one is preferable arbitrary selected from Chitayua. These oxides can improve the adhesion between the metal particles and the ceramic substrate without increasing the resistance value of the resistance heating element.
- the metal oxide is contained in an amount of 0.1 part by weight or more and less than 10 parts by weight based on 100 parts by weight of the metal particles. By using the metal oxide in this range, the resistance value does not become too large, and the adhesion between the metal particles and the ceramic substrate can be improved.
- lead oxide, zinc oxide, silica, boron oxide (B 2 0 3), alumina, yttria, Chita - percentage of ⁇ when set to 1 0 0 parts by weight of the total amount of the metal oxide, lead oxide 1 to 10 parts by weight, silica is 1 to 30 parts by weight, boron oxide is 5 to 50 parts by weight, zinc oxide is 20 to 70 parts by weight, alumina is 1 to 10 parts by weight, yttria is 1 I50 parts by weight, and titania is preferably 1 to 50 parts by weight.
- the resistance heating element 15 is a sintered body of metal particles, and is easily oxidized when exposed, and the oxidation changes the resistance value. Therefore, oxidation can be prevented by coating the surface with a metal layer 150.
- the thickness of the metal layer 150 is desirably 0.1 to 10 / zm. The reason for this is that oxidation of the resistance heating element can be prevented without changing the resistance value of the resistance heating element.
- the metal used for the coating may be a non-oxidizing metal. Specifically, at least one selected from gold, silver, palladium, platinum, and nickel is preferable. Of these, nickel is more preferred.
- the resistance heating element needs a terminal to connect to the power supply. This terminal is attached to the resistance heating element via solder, but nickel This is because thermal diffusion of the fields is prevented. Copal terminal pins can be used as connection terminals.
- the resistance heating element When the resistance heating element is formed inside the heater plate, no coating is required because the surface of the resistance heating element is not oxidized. When the resistance heating element is formed inside the heater plate, a part of the surface of the resistance heating element may be exposed.
- the metal foil used as the resistance heating element it is desirable to use a nickel foil or a stainless steel foil which is patterned by etching or the like to form a resistance heating element.
- the patterned metal foil may be bonded with a resin film or the like.
- the metal wire include a tungsten wire and a molybdenum wire.
- the Peltier element 8 is formed by connecting p-type and n-type thermoelectric elements 81 in series and joining them to a ceramic plate 82 or the like.
- Peltier device examples include silicon'germanium-based, bismuth-antimony-based, and lead'tellurium-based materials.
- a chuck positive electrostatic layer 2 and a chuck negative electrostatic layer 3 are provided between a ceramic substrate 1 and a ceramic dielectric film 4,
- An electrostatic chuck 101 having a configuration in which a resistance heating element 5 is provided on one side of the ceramic substrate 1, and as shown in FIG. 4, a chuck positive electrode is disposed between the ceramic substrate 1 and the ceramic-dielectric film 4.
- the electrostatic chuck 201 has a configuration in which an electric layer 2 and a chuck negative electrode electrostatic layer 3 are provided, and a resistance heating element 15 is provided on the bottom surface of the ceramic substrate 1. As shown in FIG.
- a chuck positive electrode electrostatic layer 2 and a chuck negative electrode electrostatic layer 3 are provided between the ceramic dielectric film 4 and a metal wire 7 as a resistance heating element is embedded inside the ceramic substrate 1.
- Electrostatic chuck 301, ceramic substrate 1 as shown in Figure 6 A chuck positive electrostatic layer 2 and a chuck negative electrostatic layer 3 are provided between the ceramic dielectric film 4 and a Peltier element 8 composed of a thermoelement 81 and a ceramic plate 82 on the bottom surface of the ceramic substrate 1.
- An example of the formed structure is an electrostatic chuck 401.
- connections (through holes) 16 and 17 are required to connect the cable to external terminals.
- the through holes 16 and 17 are formed by filling a high melting point metal such as a tungsten paste or a molybdenum paste, or a conductive ceramic such as tungsten carbide or molybdenum carbide.
- connection parts (through holes) 16, 17 is preferably 0.1 to 10 mm. This is because cracks and distortion can be prevented while preventing disconnection.
- connection pads connect the external terminal pins 6 and 18 (see Fig. 7 (d)).
- connection is made with solder or brazing material.
- Silver brazing, palladium brazing, aluminum brazing or gold brazing are used as brazing materials.
- Au—Ni alloy is desirable for gold brazing. This is because the 11-1 ⁇ 1 alloy has excellent adhesion to tungsten.
- the ratio of AuZNi is desirably [81.5 to 82.5 (% by weight)] and [18.5 to; 17.5 (% by weight)].
- the thickness of the Au—Ni layer is preferably 0.1 to 50 / ni. This is because the range is sufficient to secure the connection. Further, 500 in a high vacuum of 1 Q one 6 ⁇ 10- 5 P a: 1000 ° when used in high temperature C Au- In Cu alloy is deteriorated, Au- in N i alloys advantageously without this Yo will Do degradation is there. Further, the amount of the impurity element in the Au_Ni alloy is desirably less than 1 part by weight when the total amount is 100 parts by weight.
- thermocouple In the ceramic substrate of the present invention, a thermocouple can be embedded in the bottomed hole 11 of the ceramic substrate 1 as necessary. This is because the temperature of the resistance heating element can be measured with a thermocouple, and the temperature can be controlled by changing the voltage and current based on the data. i
- the size of the junction of the metal wires of the thermocouple should be the same as or larger than the wire diameter of each metal wire, and 0.5 mm or less. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. For this reason, the temperature controllability is improved, and the temperature distribution on the heated surface of the semiconductor wafer is reduced.
- thermocouple examples include K-type, R-type, B-type, S-type, E-type, J-type, and T-type thermocouples, as described in, for example, JIS-C-102 ⁇ 1980). Is mentioned.
- FIG. 10 is a cross-sectional view schematically showing a supporting container 41 for disposing the electrostatic chuck according to the present invention having the above configuration.
- An electrostatic chuck 101 is fitted into the support container 41 via a heat insulating material 45.
- the support container 11 has a coolant outlet 42 formed therein. The coolant is blown from the coolant inlet 44, passes through the coolant outlet 42, and exits from the suction port 43 to the outside. The operation of the refrigerant allows the electrostatic chuck 101 to be cooled.
- a green sheet 50 is obtained by mixing ceramic powder of a nitride ceramic with a binder and a solvent.
- the ceramic powder described above for example, aluminum nitride or the like can be used, and if necessary, a sintering aid such as yttria may be added.
- a sintering aid such as yttria may be added.
- several or one green sheet 50 laminated on the green sheet on which the electrostatic electrode layer printed body 51 to be described later is formed is a layer that becomes the ceramic dielectric film 4 and is made of nitride. It is assumed that oxide powder is mixed with powder.
- the binder at least one selected from an acrylic binder, ethyl cellulose, butyl cellulose-based solve, and polybutyl alcohol is desirable.
- the solvent is preferably at least one selected from ⁇ ; —terbineol and glycol.
- a paste obtained by mixing these is formed into a sheet by a doctor blade method to produce a green sheet 50.
- the green sheet 50 may be provided with a through hole for inserting a lifter pin of a silicon wafer and a recess for embedding a thermocouple, if necessary.
- the through-holes and the recesses can be formed by punching or the like.
- the thickness of the green sheet 50 is preferably about 0.1 to 5 mm.
- a conductor paste serving as an electrostatic electrode layer and a resistance heating element is printed on the green sheet 50.
- Printing is performed so as to obtain a desired aspect ratio in consideration of the shrinkage ratio of the green sheet 50, thereby obtaining the electrostatic electrode layer printed body 51 and the resistance heating element layer printed body 52. You.
- the printed body is formed by printing a conductive paste containing conductive ceramic, metal particles, and the like.
- carbides of tungsten or molybdenum are most suitable. This is because they are not easily oxidized and the thermal conductivity is not easily lowered.
- metal particles for example, tungsten, molybdenum, platinum, nickel, and the like can be used.
- the average particle diameter of the conductive ceramic particles and the metal particles is preferably 0.1 to 5 / xm. This is because it is difficult for these particles to print the conductor paste when they are too large or too small.
- a paste 85 to 97 parts by weight of metal particles or conductive ceramic particles, at least 1 'kind of binder selected from acrylonitrile, ethylcellulose, butinoreserosonolep and polyvinyl alcohol 1. 5 to 0 parts by weight, alpha-Te Rupineoru, glycol, even without less selected from ethyl alcohol Contact Yopi Putanoru 1 one solvent. 5 to 0 parts by weight mixed conductor paste prepared is applied top 1 It is.
- holes formed by punching or the like are filled with a conductive paste to obtain through-hole prints 53 and 54.
- Mark on the resistance heating element formation side The reason why the green sheet 5 having no printing body is laminated is to prevent the end face of the through hole from being exposed and being oxidized during firing for forming the resistance heating element. If the end of the through pole is to be exposed and the baking for forming the resistance heating element is performed, it is necessary to sputter a metal that is difficult to oxidize, such as nickel, and more preferably to coat it with Au—Ni gold brazing. You may.
- the laminate is heated and pressurized to sinter the green sheet and the conductive paste.
- the heating temperature is, 1000 to 2000 ° C
- the pressure is 1 00 ⁇ 200 kg / cm 2 is favorable preferred, these heating Contact Yopi pressure, under an inert gas atmosphere.
- the inert gas argon, nitrogen, or the like can be used.
- through holes 16 and 17, chuck positive electrode electrostatic layer 2, chuck negative electrode electrostatic layer 3, resistance heating element 5 and the like are formed. ,
- blind holes 13 and 14 for connecting external terminals are provided.
- At least a part of the inner wall of the blind holes 13 and 14 is made conductive, and the conductive inner wall is connected to the chuck positive electrostatic layer 2, the chuck negative electrostatic layer 3, the resistance heating element 5, and the like. Is desirable.
- alloys such as silver-lead, tin-lead, and tin-bismuth can be used.
- the thickness of the solder layer is preferably 0.1 to 50 / zm. This is because the range is sufficient to secure the connection by soldering.
- the electrostatic chuck 101 (see FIG. 1) is taken as an example.
- the electrostatic chuck 201 (see FIG. 4)
- a conductor base is printed and fired on the bottom surface of the ceramic plate to form the resistance heating element 15, and then the metal layer 150 may be formed by electroless plating or the like.
- the electrostatic chuck 301 (see FIG. 5) is manufactured, a metal foil or a metal wire may be embedded in a ceramic powder as an electrostatic electrode or a resistance heating element and sintered.
- an electrostatic chuck 4 0 1 (see FIG. 6) is, after producing the ceramic plate to t have the electrostatic electrode layer, by joining the Peltier E element through the sprayed metal layer on the ceramic plate I just need.
- the ceramic substrate is a wafer prober.
- FIG. 11 is a cross-sectional view schematically showing one embodiment of the wafer prober according to the present invention
- FIG. 12 is a cross-sectional view taken along line AA of the wafer prober shown in FIG.
- a concentric groove 67 in a plan view is formed on the surface of a ceramic substrate 63 in a circular view in a plan view, and a plurality of grooves for sucking a silicon wafer are partly provided in the groove 67.
- a suction hole 68 is provided, and a chuck top conductor layer 62 for connecting to an electrode of a silicon wafer is formed in a circular shape on most of the ceramic substrate 63 including the groove 67.
- a heating element 69 having a concentric circular shape in plan view as shown in FIG. 3 is provided on the bottom surface of the ceramic substrate 63 in order to control the temperature of the silicon wafer. External terminal pins (not shown) are connected and fixed to both ends. Further, inside the ceramic substrate 63, a guard electrode 65 and a ground electrode 66 (see FIG. 7) having a lattice shape in a plan view are provided in order to remove stray capacitor noise. The material of the guard electrode 65 and the ground electrode 66 may be the same as that of the electrostatic electrode.
- the thickness of the chuck top conductor layer 62 is desirably 1 to 20 ⁇ . If it is less than 1 ⁇ m, the resistance value is too high to act as an electrode, while if it exceeds 20 ⁇ , it tends to peel off due to the stress of the conductor.
- the chuck top conductor layer 62 for example, at least one metal selected from high melting point metals such as copper, titanium, chromium, nickele, noble metals (gold, silver, platinum, etc.), tungsten, and molybdenum can be used. it can.
- high melting point metals such as copper, titanium, chromium, nickele, noble metals (gold, silver, platinum, etc.), tungsten, and molybdenum
- a silicon substrate on which an integrated circuit is formed is placed on the silicon prober, and a probe probe having tester pins is placed on the silicon wafer.
- the continuity test can be performed by applying a voltage while pressing and heating and cooling.
- a wafer prober for example, as in the case of an electrostatic chuck, first, a ceramic substrate in which a resistance heating element is embedded is manufactured, and then a groove is formed on the surface of the ceramic substrate. Then, a metal layer may be formed by applying sputtering, plating, or the like to the surface portion where the groove is formed.
- this green sheet was dried at 80 for 5 hours, the diameter by punching 1. 8 mm, 3. 0 mm 5 - becomes 0 mm through hole ⁇ the Rifutapi t emissions of the semiconductor wafer A part and a part to be a through hole for connecting to an external terminal are provided.
- a conductor paste ⁇ was prepared by mixing 100 parts by weight of tungsten particles having an average particle diameter of 3; 1.9 parts by weight of an acryl-based binder, 3.7 parts by weight of a terbineol solvent, and 0.2 parts by weight of a dispersant.
- This conductor paste was printed on a green sheet by screen printing to form a conductor paste layer.
- the printing pattern is a concentric circle pattern.
- a conductive paste layer composed of an electrostatic electrode pattern having the shape shown in FIG. 2 is formed on another green sheet.
- the through hole for the through hole for connecting the external terminal was filled with conductor pace l ⁇ B.
- a green sheet 50 printed with a conductor paste layer consisting of: is laminated, and two green sheets 5 on which no tungsten paste 10 is printed are further laminated thereon. These are laminated at 130 ° C and 80 kg / cm 2 .
- the laminate was formed by pressure bonding (Fig. 7 ( ⁇ )).
- the obtained laminate was degreased in a nitrogen gas at 600 ° C. for 5 hours, and then dried at 189 ° C. C, (more Table 1) pressure 0 ⁇ 1 50 k gZc m 2 and 3-hour hot pressed at, aluminum nitride with a thickness of 3 mm - to obtain a ⁇ arm plate body. This is cut out into a 23 Omm disk shape, and a 6 mm thick, 1 Omm wide resistive heating element 5 and a 10 / im thick chuck positive electrode electrostatic layer 2 and chuck negative electrode electrostatic layer The plate was made of aluminum nitride and had a 3 (Fig. 7 (b)).
- the plate obtained in (4) is polished with a diamond grindstone, a mask is placed on the plate, and a bottomed hole for a thermocouple is formed on the surface by blasting with SiC or the like. (Diameter: '1.2 mm, depth: 2. Omm).
- blind holes 13 and 14 (FIG. 7 (c)
- a gold solder made of Ni—Au is used for the blind holes 13 and 14. Then, it was heated and reflowed at 700 ° C to connect the external terminals 6 and 18 made of Kopearl (Fig. 7 (d)).
- connection reliability can be ensured.
- thermocouples for temperature control were embedded in the bottomed hole, and the manufacture of the electrostatic chuck having the resistance heating element was completed.
- the porosity, porosity, withstand voltage, fracture toughness value, adsorption force, temperature rise characteristics, and warpage of the electrostatic chuck having the resistance heating element thus manufactured were measured by the following methods. The results are shown in Tables 1 and 2 below.
- the amount of oxygen contained in the ceramic substrate varies depending on the time for sintering the aluminum nitride powder. The values are shown in Table 1.
- the thermal conductivity measured by the laser flash method was 180 to 200 W'Zm ⁇ K.
- Aluminum nitride powder (manufactured by Tokuyama, average particle size 1.1 / zm) fired in air at 500 ° C for 0, 1, 7 hours. 100 parts by weight, yttria (average particle size: 0.1 4 / irn) 4 parts by weight, acrylic binder 1 1 ⁇ 5 parts by weight, dispersant 0.5 parts by weight, 1 BN 0, 3, 5% by weight (details in Table 3) and 1 butanol and ethanol The paste mixed with 53 parts by weight of alcohol was molded by a doctor blade method to obtain a green sheet having a thickness of 0.47 mm.
- a conductor paste A was prepared by mixing 0.3 parts by weight.
- This conductive paste was printed on a green sheet by screen printing to form a conductive paste layer having an electrostatic electrode pattern having the shape shown in FIG.
- conductive paste B was filled into through holes for through holes for connecting external terminals.
- the green sheet was finished the above process, further, 1 green sheets not printed with conductive paste A on the upper side (heating surface), laminated 48 sheets on the lower side, these 1 30 D C, 80 k pressure GZcm 2 To form a laminate.
- the obtained laminate was degreased in nitrogen gas at 600 ° C for 5 hours, and hot at 1890 ° C and a pressure of 0 to 150 kg / cm 2 (for details, see Table 3) for 3 hours. Pressing was performed to obtain a 3 mm-thick aluminum nitride plate. Cut this into a 23 Omm disc And a 15 ⁇ m-thick chuck positive electrode layer 32 a, b and a chuck negative electrode layer 33 a, b (see Fig. 9). Body.
- thermocouple A mask was placed on the bottom of the plate obtained in the above (4), and a recess (not shown) or the like for a thermocouple was provided on the surface by blasting treatment with SiC or the like.
- a resistance heating element 15 was printed on the surface (bottom surface) facing the wafer mounting surface.
- Print using conductor paste ⁇ The conductive paste used was Solvent PS603D manufactured by Tokuka Chemical Laboratories, which is used to form through holes in printed wiring boards.
- This conductor paste is a silver-lead paste, which is a metal oxide composed of lead oxide, zinc oxide, silica, boron oxide, and alumina (the weight ratio of each is 5/5 5/1 0 25/5). It contained 7.5 parts by weight with respect to silver 100 double halo.
- the silver had a scaly shape with an average particle size of 4.5 ⁇ . 1
- the plate on which the conductor paste was printed was heated and fired at 780 ° C. to sinter silver and lead in the conductor paste and to sinter them on a ceramic substrate. Further, the plate is immersed in an electroless nickel plating bath consisting of an aqueous solution containing nickel sulfate 30 g / 1, boric acid 30 gZ1, ammonium chloride 30 g / 1 and mouthshell salt 60 g1.
- an electroless nickel plating bath consisting of an aqueous solution containing nickel sulfate 30 g / 1, boric acid 30 gZ1, ammonium chloride 30 g / 1 and mouthshell salt 60 g1.
- a nickel layer 150 having a thickness of 1 / m and a boron content of 1% by weight or less was deposited on the surface of the silver sintered body 15. Thereafter, the plate was subjected to an annealing treatment at 120 ° C. for 3 hours.
- the resistance heating element made of a silver sintered body had a thickness of 5 ⁇ , a width of 2.4 mm, and an area resistivity of 7.7 ⁇ / port.
- blind holes for exposing the through holes 16 were formed in the ceramic substrate.
- This blind holes N i - A u alloys (. Au 8 1. 5 wt / 0, N i 1 8. 4 weight 0 / o, impurities 0.1 wt%) using gold braze consisting of, 9 70 ° C
- heat reflow was performed to connect the external terminal pins made of console.
- external terminal pins made of Copearl were formed on the resistance heating element via solder (tin 9Z lead 1).
- thermocouples for temperature control were buried in the concave portions to obtain an electrostatic chuck 201.
- the porosity, porosity, withstand voltage, rupture toughness value, adsorption power, temperature rise characteristics, and warpage of the electrostatic chuck having the resistance heating element thus manufactured were measured by the following methods. The results are shown in Tables 3 and 4 below.
- the amount of oxygen contained in the ceramic substrate differs depending on the time for firing the aluminum nitride powder. The value is shown in Table 3.
- this electrostatic chuck 201 is attached to a stainless steel supporting container 41 having a cross-sectional shape shown in FIG. 10 via a heat insulating material 45 made of ceramic fiber (trade name: IBIDEN manufactured by IBIDEN). I was fitted.
- the support container 41 has a cooling gas outlet 42 for cooling gas, and can adjust the temperature of the electrostatic chuck 201.
- the resistance heating element 15 of the electrostatic chuck 201 fitted into the support container 41 is energized to raise the temperature, and a coolant is passed through the support container to reduce the temperature of the electrostatic chuck 201. Although controlled, the temperature could be controlled very well.
- Two electrodes having the shape shown in FIG. 8 were formed by punching a 10 m thick tungsten foil.
- Aluminum nitride powder manufactured by Tokuyama Corporation, average particle size 1.1 ⁇
- yttria average particle size
- Diameter 0.4 zm Alumina 0, 1.5, 3 * .5, 15% by weight, together with 4 parts by weight, are put into a mold, and are filled with nitrogen at 189 ° C, pressure 0 to 15 Hot pressing was performed at 0 kg / cm 2 (for details, see Table 5) for 3 hours to obtain a 3 mm-thick aluminum nitride plate. This was cut into a circular shape having a diameter of 23 Omm to obtain a plate-like body. At this time, the thickness of the electrostatic electrode layer was ⁇ / xm.
- Example 2 The steps (5) to (7) of Example 1 were performed on the plate-like body to obtain an electrostatic chuck 301.
- the porosity, porosity, withstand voltage, rupture toughness value, adsorption power, temperature rise characteristics, and warpage of the electrostatic chuck having the resistance heating element thus manufactured were measured by the following methods. The results are shown in Tables 5 and 6 below.
- the amount of oxygen contained in the ceramic substrate differs depending on the time for firing the aluminum nitride powder. The value is shown in Table 5 [Table 5].
- Oxygen content A sample sintered under the same conditions as the sintered body according to the example was pulverized in a tungsten mortar, 0.01 g of the sample was collected, and the sample was heated at 2200 ° C for 30 seconds under the conditions of oxygen and nitrogen. The measurement was performed with a simultaneous analyzer (LECO Co., Ltd., Ding-136).
- the ceramic dielectric film was cut out, and the porosity was measured by the Akimimedes method. Specifically, the cut sample is crushed into powder, put into an organic solvent or mercury, and the volume is measured. The true specific gravity is measured from the weight of the powder measured in advance, and from the apparent specific gravity, The porosity was calculated.
- the electrostatic chuck was cut at several points in the vertical direction, and the length of the cut hole was measured with a microscope. If the height and width differ, the maximum value is used.
- the indenter was pressed into the surface with a Vickers hardness tester (MVK-Dli, manufactured by Akashi Seisakusho Co., Ltd.), and the length of the generated crack was measured. This was substituted into the following formula.
- E is the Young's modulus (3.18 x 10 a)
- P is the indentation load (98 N)
- a is half the indentation diagonal length (m)
- C is half the average crack length (m). is there!)
- the time required to raise the temperature to 450 was measured.
- the withstand voltage of the ceramic dielectric film is 11 to 20 kV / mm at room temperature, and 1 to 10 k at 450. V / mm is good.
- the rupture toughness value can be maintained at 3.5MPam1 / 2 or more.
- the maximum pore diameter is set to 50 / zm or less, the amount of warpage at high temperatures can be reduced. When there are no pores, the withstand voltage becomes very high, and the warpage can be almost completely eliminated.
- Example 2 After performing the steps (1) to (5) of Example 2 (the conditions in the first stage in Table 3), nickel was further sprayed on the bottom surface, and then a lead'tellurium-based Peltier device was joined. The electrostatic chuck 401 was obtained.
- the electrostatic chuck manufactured in this way has excellent temperature-reducing properties, and is 450 to 100 when cooled with a Peltier device. The temperature dropped to C in 3 minutes.
- Conductor paste B 100 parts by weight of tungsten particles having an average particle diameter of 3 / xm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of ⁇ : -terbineol solvent, and 0.2 parts by weight of a dispersant are mixed.
- Conductor paste B was used.
- a grid-shaped printed body for a guard electrode and a printed body for a duland electrode were printed on the green sheet by screen printing using the conductive paste A.
- a conductive paste B was filled in a through hole for a through hole for contacting a terminal pin.
- the laminate was degreased in nitrogen gas at 600 ° C for 5 hours, and hot-pressed at 1890 ° C and a pressure of 150 kg / cm 2 for 3 hours to obtain a 3 mm-thick aluminum nitride.
- a plate-like body was obtained.
- the obtained plate was cut into a circular shape having a diameter of 30 Omm to obtain a ceramic plate.
- the size of the through hole 660 was 0.2 mm in diameter and 0.2 mm in depth.
- the thickness of the guard electrode 65, the ground electrode 66 is 10 / zm, the formation position of the guard electrode 65, 1 mm from the wafer mounting surface, the formation position of the ground electrode 6 6 from ⁇ E c ⁇ surface 1 ⁇ It was 2 mm. Also, the size of one side of the conductor non-forming region 66a of the guard electrode 65 and the ground electrode 66 was 0.5 mm.
- a layer for forming the heating element 69 was printed on the surface facing the wafer mounting surface.
- a conductor paste was used.
- the conductive paste used was Solvent PS 603D manufactured by Tokuka Chemical Laboratory, which is used to form through holes in printed wiring boards.
- This conductor paste is a silver-Z lead paste, which is composed of a metal oxide composed of lead oxide, zinc oxide, silica, boron oxide, and alumina (the weight ratio of each is 5/55/10/25/5). It contained 7.5 parts by weight for 100 parts by weight.
- the silver was scaly with an average particle size of 4.5 ⁇ m.
- the heater plate on which the conductor paste was printed was heated and baked at 780 ° C. to sinter silver and lead in the conductor paste and to sinter them on the ceramic substrate 63.
- An electroless solution consisting of an aqueous solution containing 60 g / 1 of Rochelle salt.
- a nickel layer (not shown) having a thickness of 1 ⁇ and a boron content of 1% by weight or less was deposited on the surface of the sintered body 69. Thereafter, the heater plate was annealed at 120 ° C. for 3 hours.
- the heating element made of a silver sintered body had a thickness of 5 / m, a width of 2.4 mm, and a sheet resistivity of 7.7 ⁇ / port.
- a titanium layer, a molybdenum layer, and a nickel layer were sequentially formed on the surface on which the grooves 67 were formed by sputtering.
- the equipment for sputtering is Nihon Shin SV-4540 manufactured by Sora Technology Co., Ltd. was used.
- the sputtering conditions were as follows: atmospheric pressure: 0.6 Pa, temperature: 100 ° C., power: 200 W. Sputtering time was adjusted for each metal within a range of 30 seconds to 1 minute.
- the thickness of the obtained film was 0.3 / m for the titanium layer, 2 / zm for the molybdenum layer, and 1 jum for the nickel layer from the image of the X-ray fluorescence spectrometer.
- the heating element surface does not conduct current and is not covered with electrolytic nickel plating.
- the electroless gold plating solution containing 2 gZ1 of gold potassium cyanide, 75 g / 1 of ammonium chloride, 50 gZl of sodium citrate and 10 g / 1 of sodium hypophosphite on the surface was added at 93 ° C. It was immersed in the condition of C for 1 minute to form a gold plating layer having a thickness of 1 m on the nickel plating layer.
- An air suction hole 68 that passes through the groove 67 to the back surface is formed by drilling, and a blind hole (not shown) for exposing the through hole 660 is provided.
- a brazing filler metal made of a Ni-Au alloy Au 81.5 wt./., Nil 8.4 wt%, impurities 0.1 wt%)
- the external terminal pins made by the product were connected.
- Kovar external terminal pins were formed on the heat body via solder (tin 90% by weight / lead 10% by weight).
- thermocouples for temperature control were buried in the concave portions to obtain a wafer probe heater 601.
- the ceramic substrate thus obtained had a maximum pore diameter of 2 ⁇ m and a porosity of 1%. Even when the temperature of the ceramic substrate was raised to 200 ° C and the voltage was applied to 200 V, insulation breakdown did not occur. In addition, the amount of warpage was good at 1 / xm or less.
- Silicon carbide powder fired in air at 500 DC , 0, 1, 7 hours (Yakushima Electric Works Co., Ltd.) Average particle size 1.1 ⁇ ) 100 parts by weight, carbon 4 parts by weight, acrylic binder: Ul. 5 parts by weight, dispersant. 5 parts by weight Alcohol consisting of 1-butanol and ethanol
- the paste mixed with 53 parts by weight was molded by a doctor blade method to obtain a green sheet having a thickness of 0.5 mm.
- Example 7 As is clear from Tables 7 and 8 above, in the electrostatic chuck according to Example 6, the withstand voltage of the ceramic dielectric film is good. In addition, the fracture toughness value can be secured at 4.0MPam1 / 2 or more . Furthermore, by setting the maximum pore diameter to 50 m or less, the amount of warpage at high temperatures can be reduced. (Example 7 and Comparative Example 5)
- a concave portion was formed by drilling on the surface of the electrostatic chuck of Example 1 and 'Comparative Example 1, and alumina support pins for supporting the silicon wafer were formed in the concave portion.
- Example 7 and Comparative Example 7 were set so that the distance between them was 100 / zm.
- the voltage was applied to only the resistance heating element without applying the voltage to the electrostatic electrode and heated, the temperature of the silicon wafer was raised to 400 ° C., and the temperature difference on the surface of the silicon wafer was measured.
- the amount of warpage of the ceramic substrate is 1 or 0 ⁇
- the surface temperature difference of the silicon wafer is 3 ° C
- the amount of warpage is 8 / zm
- the temperature difference of the surface of the silicon wafer is Was 1 o ° c, and the temperature uniformity of the silicon wafer was poor.
- the aluminum nitride powder was not fired in the air, but was sintered under normal pressure (from this, an electrostatic chuck having a thickness of 30 mm was manufactured.
- the aluminum nitride powder was fired in the air.
- an electrostatic chuck having a diameter of 15 O mm was manufactured by normal pressure sintering, and the warpage was 1 / m or less even after the temperature was increased to 450 in each case.
- the present invention is particularly effective for a ceramic substrate for a semiconductor manufacturing / inspection apparatus having a thickness of not more than 25 mm and a diameter of not less than 200 mm and having a through hole. Possibility of industrial use
- the withstand voltage is maintained even if the ceramic substrate is made of a non-oxide ceramic containing oxygen and the maximum pore size is 50 j tn or less, which is larger than the conventional one. It can be kept large enough.
- the rupture toughness value can be increased, and it can withstand thermal shock. Furthermore, the amount of warpage at high temperatures can be reduced.
Description
Claims
Priority Applications (2)
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US09/926,297 US6891263B2 (en) | 2000-02-07 | 2001-02-07 | Ceramic substrate for a semiconductor production/inspection device |
EP01902801A EP1193233A1 (en) | 2000-02-07 | 2001-02-07 | Ceramic substrate for semiconductor production/inspection device |
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JP2000029279 | 2000-02-07 | ||
JP2000-29279 | 2000-02-07 |
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US09/926,297 A-371-Of-International US6891263B2 (en) | 2000-02-07 | 2001-02-07 | Ceramic substrate for a semiconductor production/inspection device |
US10/746,081 Division US20040134899A1 (en) | 2000-02-07 | 2003-12-29 | Ceramic substrate for a semiconductor-production/inspection device |
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WO2001058828A1 true WO2001058828A1 (fr) | 2001-08-16 |
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PCT/JP2001/000866 WO2001058828A1 (fr) | 2000-02-07 | 2001-02-07 | Substrat ceramique pour dispositif de production ou d'examen de semi-conducteurs |
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US (2) | US6891263B2 (ja) |
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US5914613A (en) | 1996-08-08 | 1999-06-22 | Cascade Microtech, Inc. | Membrane probing system with local contact scrub |
US6256882B1 (en) | 1998-07-14 | 2001-07-10 | Cascade Microtech, Inc. | Membrane probing system |
WO2001017927A1 (fr) * | 1999-09-06 | 2001-03-15 | Ibiden Co., Ltd. | Briquette et substrat ceramique en nitrure d'aluminium carbone fritte destine a des equipements de fabrication ou de verification de semi-conducteurs |
US6861165B2 (en) * | 2000-02-24 | 2005-03-01 | Ibiden Co., Ltd. | Aluminum nitride sintered compact, ceramic substrate, ceramic heater and electrostatic chuck |
JP2001247382A (ja) * | 2000-03-06 | 2001-09-11 | Ibiden Co Ltd | セラミック基板 |
EP1233651A1 (en) * | 2000-04-07 | 2002-08-21 | Ibiden Co., Ltd. | Ceramic heater |
JP3565496B2 (ja) * | 2000-04-13 | 2004-09-15 | イビデン株式会社 | セラミックヒータ、静電チャックおよびウエハプローバ |
JP3516392B2 (ja) * | 2000-06-16 | 2004-04-05 | イビデン株式会社 | 半導体製造・検査装置用ホットプレート |
US6809299B2 (en) * | 2000-07-04 | 2004-10-26 | Ibiden Co., Ltd. | Hot plate for semiconductor manufacture and testing |
US6815646B2 (en) * | 2000-07-25 | 2004-11-09 | Ibiden Co., Ltd. | Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober |
US6965226B2 (en) | 2000-09-05 | 2005-11-15 | Cascade Microtech, Inc. | Chuck for holding a device under test |
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Also Published As
Publication number | Publication date |
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EP1193233A1 (en) | 2002-04-03 |
US20030047802A1 (en) | 2003-03-13 |
US20040134899A1 (en) | 2004-07-15 |
US6891263B2 (en) | 2005-05-10 |
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