JPS58101442A - 電気的装置用基板 - Google Patents

電気的装置用基板

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Publication number
JPS58101442A
JPS58101442A JP56200644A JP20064481A JPS58101442A JP S58101442 A JPS58101442 A JP S58101442A JP 56200644 A JP56200644 A JP 56200644A JP 20064481 A JP20064481 A JP 20064481A JP S58101442 A JPS58101442 A JP S58101442A
Authority
JP
Japan
Prior art keywords
glass
substrate
layer
thermal expansion
expansion coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56200644A
Other languages
English (en)
Inventor
Yasuo Matsushita
松下　安男
Kosuke Nakamura
浩介 中村
Mitsuru Ura
浦　満
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56200644A priority Critical patent/JPS58101442A/ja
Priority to EP82306602A priority patent/EP0081992A3/en
Priority to US06/448,592 priority patent/US4517584A/en
Publication of JPS58101442A publication Critical patent/JPS58101442A/ja
Pending legal-status Critical Current

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    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は新規な電気的装置用基板に係シ、特に金属ペー
ストや接着用ガラスとの密着性Ｋｉすれた５ｔｃｔ主成
分とするセラ建ツク基板を用い喪中導体装置用基板に関
する。
高熱伝導・電気絶縁性８ｉＣセラミツク基板（特Ｒ＠５
６−６６０８６号）は現在主流であるアル建す基板に比
べて軽量で強度が強く、熱膨張係数は約１／２で８ｉの
それに近いなどの特徴がＴｏ）、特に熱伝導率はＡｔと
同等で放熱性に優れるため、各種の８ｉ半導体素子を実
装する半導体装置用基板として好適である。
ところで半導体装置用基板には、８量素子のロク接や導
体回路を形成するため、通常はＡｕ。
ｈｇ、Ｃｕなど市販のガラス７リツト混合導体ペースト
によってメタライズが行われている。ま九パッケージ用
基板の場合は、上述したメタライズの他に基板上にリー
ドフレームのガラス接着やＡ４０ｍ磁器蓋のガラス封止
がなされる。
しかしながら、８１Ｃセラミツク基板は、一般ＫＰＭ金
属及び溶融ガラスとの濡れが悪＜、シたがって基板との
密着強度の大きい導体ペーストによるメタライズやガラ
ス接着が得にくいのが難点で番った。
本発明の目的は、ガラスフリット混合導体べ＝スト及び
カラスシール用のソルダガラスに対して＊固な密着強度
を有する電気的装置用基板を提供することにある。
本発明の特徴は、非酸化−系セラミック基体上にガラス
と反応する薄層を設け、この薄層上にガラス層を設は良
電気的装置用基板にある。これらの膜によって導体ペー
スト及びソルダガラスとの−れが改善され、密着強度の
強いメタライズ及びガラス接合が得られる。
非酸化物系セラミック焼結体としては、室温の熱膨張率
が８１のそれに近似していて、室温の熱伝導率がα２　
Ｃｌｉｔ／ａ１１・１ｉＫｌ　・ｌ：’以上、％にα４
ｃａＬ／ｉ・戴・Ｃ以上を有するものが好ましい。熱膨
張率は４　Ｘ　１０−＠／Ｃ以下が好ましい。
非酸化物系セラミック焼結体は炭化物、窒化物が使用で
１．ｂが、特に少量のペリ９クムを含む炭化ケイ素を主
成分とする電気絶縁性焼結体が好ましい、ベリリワムは
金属又はその化合物として酸化物、炭化物が使用され、
ペリリクム０．１〜３．５重量％が好ましい。窒化ケイ
素、窒化アルミニワムが好ましい。
ガラスと反応する薄層は酸化物層又は酸化層が好ましい
。炭化ケイ素を主成分とする焼結体に対しては、その酸
化処理によって形成させ九旧ｏ。
皮膜が好ましい。
以下、本発明になる基板を図面を用いて説明する。本発
明基板は第１図に示すように、非酸化物第七ラミック焼
結体として、８ｉＣ質セ９ミック基体１と、皺基体表面
に形成され次ガラスと反応する薄膜として、８口り層２
と、峡Ｓｌｏｗ層を被覆するガラス層３とを具備する。
本発明の８ｉＣ質セラミック基体１は、衡い熱伝導率及
び電気抵抗率を有する１３ｅ又はＢｅ化合物の１１１以
上を含有した相対密度が９０％以上の緻密な焼結体であ
る。
本発明におφてはＳｉＣセッンツク基体ｌ上に、例えば
熱酸化法やｃｖｎ、ＰＶＤ法など公知の技術によシ基体
との密着性にすぐれたｆ９ｉ０．層２が形成される。さ
らに、このＳｉｎ、層２を介して基体１と熱膨張係数が
近似したガラス層３を被覆す上にガラス層Ｓｔｍ着性良
く接合することができる。８ｉＣセラミック基体ｌは熱
膨張係数が４０〜４５　Ｘ　ｌ　（Ｖ’／ＣでＴｏり、
し九がって被覆ガラスは熱膨張係数が２５〜６０　Ｘ　
１　Ｇ−／Ｃ，好ましくは３５〜４５　Ｘ　１０−’／
Ｃのものを用いることかで龜る。被覆カラスの熱膨張係
数は、ガラスと基体及びガラス層上にロワ付される８ｉ
＊子との間の熱膨張差を小さくシ、ガラス層及び実装後
のＳｉ素子に残留歪を生じさせず、これらの強度低下を
防止するには２５〜６０Ｘ１０’／ｌ：’が好ましい、
８１Ｃ焼結体の相対密［１−９０％以上の緻密質な基体
を得、さらに電気抵抗率１０１Ω国以上の絶縁基板を得
るには、Ｂｅα０５重量％以上のＢＯＸはＢｅ化合物が
好ましい。８１Ｃ焼結体の熱膨張率ｔ４５Ｘ１０−’／
ｌ：’以下とし、Ｓｉ素子との熱膨張差を小さくするた
めＫＦｉＢ＠５重量％のＢｅ又は１３ｅ化合物が好まし
い。
本発明では、非酸化物系セラずツク基体に形成するガラ
スと反応する薄層の厚さは被覆ガラスとの濶れの点から
０゜０５μｍ以上が好ましく、さらに好ましくはα１〜
３μｍでめる。被覆ガラス層の厚さは熱伝導性の点から
α５■以下が好ましいが、さらに好ましくはα０５〜α
３■である。
本発明の基板は表面に滑らかで平坦性の良い被覆ガラス
層があるため導体ペースト塗布時のにじみがなく、また
焼付後の導体ペーストの密着強度も高い。ガラス層には
ムＵ１人ｔなどの金属の蒸着が可能で６〕、有機接着材
の使用賜可能である。
ガラス層は基板の電気絶縁性をよ）一層高める効果４あ
る。特に、５ｉｃｔ−主成分とする焼結体からなる基板
はその熱膨張係数がＳｉ素子のそれに近いため、熱ｊ１
１脹係数の大きい従来のアルイナ基板を使用しｔ場合に
比べて冥装できるＳｉ素子の大蓋化が可能であル、さら
に基板は熱伝導性にすぐれて−るので半導体パワーモジ
ュールや大規模な集積回路などの熱放散性が要求される
分野での使用に好適である。
纂１図は、本発明の電気的装置用基板のＷＩｆｒ向図で
ある。基体１の全面に８４０２層２を設け、その上にガ
ラス層３會徽覆したもの、第２図に示す如く基体表面Ｋ
ＳｉＯ，層２及びカラス層３を局部的、部分的に被覆し
たもの及び第３図に示す如く基体ｌを多層構造にするこ
ともできる。
実施例 Ｂ　ｅ　Ｏｌ−２重量％（Ｂ＠量α７２重量％）を含有
し、残部がＳｉＣからなる祖対書［９９％以上の緻密な
焼結体からなる基体をスチーム酸素中で１．２００Ｃに
て酸化処理を行い、膜厚α６μｍＯ熱酸化８１０ｇ層を
形成させた０次に基体酸化膜上にホワケイ酸系のパイレ
ックスガラス（Ｉ城硝子（株ト製品コードム７７４Ｇ）
の微粉末會遠心沈降法により沈積させ良後、パイレック
スガラスの軟化点以上に加熱して、基体熱酸化Ｓ口り層
上に膜厚αｌ■で平滑かつガラス光沢表面を有する無気
孔質のガラス層を付着させた。この８ｉＣ焼結体は室温
で１０”＃−ａｍ以上の抵抗率、＆５Ｘ１Ｇ″４／Ｃの
熱膨張率、Ｑ、７Ｃ１ｔ／ｃｌｌＩ−戚・Ｃの熱伝導率
を有している。
このようにして得た基板に市販品である種々のけ九。ま
良路４図及び第５図に示すように基板１１及び２１上に
リードフレーム１３．２８及びアルＺす磁器キャップ１
２．２２ｔ−ソルダガラス１５．２５及び１７，２７１
−用いて接合し良。そして導体ペースト及びソルダガラ
スの接着強度をリーク量が１　ｘ　Ｉ　Ｑ−１ｃｃ／ｓ
以下でＴｏり気密性は良好であった。また、本実施例の
基板上にＡｕペーストを焼付け、その上に３ｔベレツト
１４゜２４をＡｕ−８ｉ共晶ソルダ１ｇ、２ｇでＹ　９
　ント接合したが、接合時の熱的変化に対して基板上の
ガクス層十人ｕ−８４接合部の破損は起らず、本発明基
板は十分な強ＩＩＩＬｔ−有する。また本実施例基板を
用いて、リードフレームのガラス接着、Ａｕペーストに
よるＢｔ−チツプＡｕ−８ｉ接合及びλＬｏｏｎ磁器の
ガラス封止を行った半導体装置の、実負荷テストや冷熱
サイクルテストを行ったがこれらに十分に耐え、半導体
装置用基板として実用できることが繭重できた。
以上、本発明の電気的装置用基板によれば、導体ペース
ト及びガラスンールが５！１固に接着し、基板との四着
性にすぐれ友メタライズ並びにガラス接合が得られる。
【図面の簡単な説明】
１１に１〜３図は本発明の電気的装置用基板の断面図及
び第４図及び第５図は本発明の電気的妓置用基板′ｇｔ
使用した半導体装置の断面図でるる。 １．１１．２１・・・８１Ｃセラミック基体、２゜１０
．２０・・・Ｓｉｎ、層、３．１５．１７，２５゜２７
・・・ガラス層、１２．２２・・・キャップ、１８゜２
．３・・・リードフレーム、１４．２４・・・８４チツ
プ、１６．２６・・・ボンデングワイヤ、１８．２８・
・・金属ソルダ、２９・・・放熱フィン、３０・・・エ
ポキシ系′ｆ５１図 ｖＩ２図 第３図 第４旧 第５図 ９

Claims (1)

  1. 【特許請求の範囲】 １、非酸化物系セラζツク焼結体上に１ガラスと反応す
    る薄層を設け、皺薄層上にガラス層を設けたこと１−特
    徴とする電気的装置用基板。 ２、前記焼結体はペリリワムを食前する炭化ケイｌＡを
    主成分とする電気絶縁性焼結体である特許請求の範１ｉ
    ｉｌｉ１項に記載の電気的装置用基板。 ３、前記ガラスと反応する薄層は酸化物層又は酸化層で
    ある特許請求の範囲第１項又は第２項に記載の電気的装
    置用基板。 ４、前記ガラス層の室温の熱膨張係数がｚｓ〜６Ｘ　１
    　Ｇ−＠／Ｕである特許請求の範囲第２項又蝶第３項に
    記載の電気的装置用基板。
JP56200644A 1981-12-11 1981-12-11 電気的装置用基板 Pending JPS58101442A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56200644A JPS58101442A (ja) 1981-12-11 1981-12-11 電気的装置用基板
EP82306602A EP0081992A3 (en) 1981-12-11 1982-12-10 Ceramic packaged semiconductor device
US06/448,592 US4517584A (en) 1981-12-11 1982-12-10 Ceramic packaged semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56200644A JPS58101442A (ja) 1981-12-11 1981-12-11 電気的装置用基板

Publications (1)

Publication Number Publication Date
JPS58101442A true JPS58101442A (ja) 1983-06-16

Family

ID=16427816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56200644A Pending JPS58101442A (ja) 1981-12-11 1981-12-11 電気的装置用基板

Country Status (3)

Country Link
US (1) US4517584A (ja)
EP (1) EP0081992A3 (ja)
JP (1) JPS58101442A (ja)

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Also Published As

Publication number Publication date
US4517584A (en) 1985-05-14
EP0081992A3 (en) 1984-11-14
EP0081992A2 (en) 1983-06-22

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