WO2000023494A1 - Flame-retardant epoxy resin composition and semiconductor device made using the same - Google Patents
Flame-retardant epoxy resin composition and semiconductor device made using the same Download PDFInfo
- Publication number
- WO2000023494A1 WO2000023494A1 PCT/JP1999/005787 JP9905787W WO0023494A1 WO 2000023494 A1 WO2000023494 A1 WO 2000023494A1 JP 9905787 W JP9905787 W JP 9905787W WO 0023494 A1 WO0023494 A1 WO 0023494A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- epoxy resin
- cured product
- resin composition
- weight
- inorganic filler
- Prior art date
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 184
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 184
- 239000000203 mixture Substances 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000003063 flame retardant Substances 0.000 title abstract description 45
- 229920005989 resin Polymers 0.000 claims abstract description 68
- 239000011347 resin Substances 0.000 claims abstract description 68
- 239000005011 phenolic resin Substances 0.000 claims abstract description 53
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 43
- 239000011256 inorganic filler Substances 0.000 claims abstract description 42
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 42
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000197 pyrolysis Methods 0.000 claims abstract description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 20
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 19
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical class C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 13
- 239000006260 foam Substances 0.000 claims description 13
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 10
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 10
- 239000001569 carbon dioxide Substances 0.000 claims description 10
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 239000005539 carbonized material Substances 0.000 claims description 2
- 150000002989 phenols Chemical class 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 239000000945 filler Substances 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 239000007789 gas Substances 0.000 description 21
- 238000012360 testing method Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 20
- 230000007797 corrosion Effects 0.000 description 15
- 238000005260 corrosion Methods 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 12
- 239000006087 Silane Coupling Agent Substances 0.000 description 11
- 239000011342 resin composition Substances 0.000 description 11
- 239000004593 Epoxy Substances 0.000 description 10
- 238000002485 combustion reaction Methods 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- 238000000465 moulding Methods 0.000 description 10
- 229910052736 halogen Inorganic materials 0.000 description 9
- 150000002367 halogens Chemical class 0.000 description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- 239000006229 carbon black Substances 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 7
- 125000003700 epoxy group Chemical group 0.000 description 7
- 239000005350 fused silica glass Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- 150000001491 aromatic compounds Chemical class 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004203 carnauba wax Substances 0.000 description 4
- 235000013869 carnauba wax Nutrition 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- 229930185605 Bisphenol Natural products 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- WUOBERCRSABHOT-UHFFFAOYSA-N diantimony Chemical compound [Sb]#[Sb] WUOBERCRSABHOT-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004868 gas analysis Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- CMZYGFLOKOQMKF-UHFFFAOYSA-N 1-(3,5-dimethylphenyl)-3,5-dimethylbenzene Chemical group CC1=CC(C)=CC(C=2C=C(C)C=C(C)C=2)=C1 CMZYGFLOKOQMKF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000002790 naphthalenes Chemical class 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- KGSFMPRFQVLGTJ-UHFFFAOYSA-N 1,1,2-triphenylethylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(C=1C=CC=CC=1)CC1=CC=CC=C1 KGSFMPRFQVLGTJ-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 235000010919 Copernicia prunifera Nutrition 0.000 description 1
- 244000180278 Copernicia prunifera Species 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- RYTOQJNZWMEQIU-UHFFFAOYSA-K [B+3].[OH-].[OH-].[OH-] Chemical class [B+3].[OH-].[OH-].[OH-] RYTOQJNZWMEQIU-UHFFFAOYSA-K 0.000 description 1
- WAIPAZQMEIHHTJ-UHFFFAOYSA-N [Cr].[Co] Chemical compound [Cr].[Co] WAIPAZQMEIHHTJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- -1 aryl alcohol Chemical compound 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 230000007665 chronic toxicity Effects 0.000 description 1
- 231100000160 chronic toxicity Toxicity 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- IBIRZFNPWYRWOG-UHFFFAOYSA-N phosphane;phosphoric acid Chemical compound P.OP(O)(O)=O IBIRZFNPWYRWOG-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to an epoxy resin composition suitably used as a semiconductor encapsulating resin. More specifically, the epoxy resin composition has excellent flame retardancy and reliability as a semiconductor encapsulating resin, especially solder crack resistance, moisture resistance and The present invention relates to a flame-retardant epoxy resin composition having excellent wiring corrosion resistance at high temperatures. Further, the present invention relates to a semiconductor device using the flame-retardant epoxy resin composition.
- the epoxy resin composition used as the semiconductor encapsulating resin is required to have flame retardancy according to UL standards in order to ensure safety. Therefore, the epoxy resin composition generally contains a halogen-based flame retardant as a flame retardant and diantimony trioxide as a flame retardant auxiliary.
- a high degree of safety is required for flame retardants and flame retardant auxiliaries used in sealing resins for various semiconductor devices.
- Halogen-based flame retardants generate harmful halogen gases and the like during combustion, and diantimony trioxide, which is a flame retardant, is suspected to have chronic toxicity. Problems regarding hygiene have been pointed out, and it is currently considered that conventional semiconductor sealing resins are not sufficiently safe. Also, at high temperatures, halogen and antimony derived from the flame retardants and flame retardant aids corrode the wiring of semiconductor devices, especially at the interface between the gold (Au) wire and the aluminum (A1) pad (dissimilar gold). To increase the contact resistance of the junction between the Au wire and the A1 pad, leading to disconnection. This leads to the reliability of semiconductor devices, especially resistance to wiring corrosion at high temperatures. It is a cause of lowering the sex. Therefore, there is a need to develop an epoxy resin composition for semiconductor encapsulation having excellent flame-retardant properties and reliability without using a halogen-based flame retardant or niantimon trioxide.
- red phosphorus and phosphate Phosphorus-based flame retardants such as toluene are useful for making the epoxy resin composition flame-retardant, but react with a small amount of water to produce phosphine and corrosive phosphoric acid, which has a problem with moisture resistance, and therefore has a problem with moisture resistance. It is not suitable for use in encapsulation of electronic components, which are particularly demanding for performance.
- the use of metal hydroxides, such as aluminum hydroxide and magnesium hydroxide, and boron compounds as flame retardants has also been studied, but these metal hydroxide-boron compounds have been used in epoxy resin compositions.
- the effect of the flame retardancy is not sufficiently high, so that there is a problem that the moldability of the epoxy resin composition is deteriorated by these additions.
- an inorganic filler may be highly filled in the epoxy resin composition, for example, by adding 87 to 95% by weight.
- An epoxy resin composition for semiconductor encapsulation with improved flame retardancy and a semiconductor device Japanese Patent Application Laid-open No. Hei 8-310984
- an epoxy resin and a composition containing an inorganic filler in an amount of 83 volumes. /. (Spherical silica powder: 91 wt./.)
- Epoxy resin composition and semiconductor encapsulation device with improved flame resistance by being filled at a higher ratio than the above Japanese Patent Application Laid-Open No. 9-208808) Gazette
- These epoxy luster compositions have a problem that the moldability when used for encapsulating semiconductor devices is insufficient due to the high filling of the inorganic filler. .
- the present invention has been made in view of the above-mentioned problems, and does not use any flame retardant.
- Another object of the present invention is to provide an epoxy resin composition in which the flame retardancy is improved by the crosslinked structure itself of the cured product without particularly increasing the inorganic filler.
- This flame-retardant epoxy resin composition exhibits a high degree of flame retardancy by forming a foamed layer that can suppress the transfer of heat to the combustion part and the supply of oxygen during thermal decomposition or ignition when the cured product is fired.
- it has excellent reliability as a semiconductor encapsulation resin, such as resistance to wiring cracks at high temperatures, such as solder crack resistance and moisture resistance.
- Another object of the present invention is to provide a semiconductor device using the flame-retardant epoxy resin composition.
- the present invention provides the following epoxy resin compositions (1) to (4).
- An epoxy resin composition containing an epoxy resin (A), a phenolic resin (B), an inorganic filler (C), and a curing accelerator (D), and is a cured product obtained by curing the composition.
- the content of the inorganic filler (C) in it is W (% by weight), and the cured product is 240 ⁇ 20.
- An epoxy resin composition having a numerical value of -184, wherein the cured product forms a foamed layer at the time of thermal decomposition and ignition to exhibit flame retardancy.
- the content of the inorganic filler (C) in the composition was set to W (% by weight), and the atmosphere of the heat-resistant container in which the cured product was measured was made inert by using a constant flow rate of an inert gas.
- each represents a number of 5, 5 Q 2 ⁇ 50, to pre-Symbol cured product characterized in that it presents a flame retardant to form a foamed layer at the time of thermal decomposition and ignition Epoxy resin composition.
- An epoxy resin composition containing an epoxy resin (A), a phenolic resin (B), an inorganic filler (C), and a curing accelerator (D), and is a cured product obtained by curing the composition.
- W % by weight
- E flexural modulus of this cured product at 240 ⁇ 20 ° C
- a value of 7W — 184 is indicated, and the heat-resistant container in which the cured product is measured is set in a tubular furnace ⁇ ⁇ in which the atmosphere is made inactive using a constant flow rate of inert gas, and 7.00
- the weight ratio of carbon monoxide and carbon dioxide generated when the cured product is thermally decomposed at ⁇ 10 ° for 10 minutes to the cured product is qi (% by weight), and the residue after completion of the thermal decomposition is KazuSatoshi remaining carbides and q 2 (wt weight ratio against the cured product of the inorganic filler without pyrolysis of the resin component in the cured product (inorganic filler (C) components outside than) ./.),
- the weight ratio of the resin component contained in the cured product to the cured product is q 3 (weight./o)
- An epoxy resin composition comprising: an epoxy resin, A) a fuanol-based resin (B), an inorganic filler (C), and a curing accelerator (D), wherein a cured product obtained by curing the composition is An epoxy resin composition characterized in that it forms a foam layer at the time of pyrolysis and ignition to exhibit flame retardancy.
- the present invention also provides a semiconductor device using the epoxy resin composition according to any one of (1) to (4) as a sealing resin.
- the flame-retardant mechanism of the flame-retardant epoxy resin composition according to the present invention will be described below.
- the pyrolysis gas generated inside the cured product at the time of pyrolysis or ignition causes the layer of the cured product to expand like a rubber to form a foamed layer, and unburned by this foamed layer This is because the cured product exhibits self-extinguishing properties by blocking oxygen to the part and heat insulating action.
- the foamed layer is completely different from the one formed artificially by the foaming molding method as contained in phenol foam resin or the like, and the epoxy resin cured product of the present invention may be thermally decomposed, It is newly generated when ignition occurs.
- the layer of the cured product is too hard, so that the pyrolysis gas generated inside the cured product at the time of pyrolysis or ignition causes the cured product to be cured. It is considered that the layer cannot expand like rubber, and instead of forming a foam layer, cracks are generated in the cured product, and as a result, the flame retardancy is greatly reduced.
- the elastic modulus E is lower than the predetermined range, a foamed layer is formed at the beginning of thermal decomposition or ignition, but the foamed layer is easily formed because the layer of the cured product is too soft. It is thought that the flame retardancy is greatly reduced because the material breaks, and the entire cured product shows high fluidity, causing dripping and continuing combustion.
- the free volume in the epoxy resin cured product increases, and as a result, the elastic modulus of the resin component in the cured product decreases, so that the formation of a foamed layer is facilitated.
- the thermal decomposition of the resin component itself is suppressed as compared with the case of introducing a saturated hydrocarbon compound, and thereby a stable foamed layer can be formed.
- the resin layer expands like rubber due to the gas component generated by decomposition of the resin component at the time of thermal decomposition or ignition, and a foamed layer is formed. The decomposition gas destroys the foamed layer.
- the heat-resistant container into which the cured product was weighed was set in a tubular furnace in which the atmosphere was made inert using a constant flow of an inert gas, and the temperature was set to 700 ⁇ 10.
- Carbon monoxide and carbon dioxide ie, non-organic components in the decomposed gas generated when the cured product is thermally decomposed for 10 minutes at C with respect to components (resin components) other than the inorganic filler (C)
- the weight ratio (% by weight) is set to ⁇ 5, and the weight ratio of gas components other than carbon monoxide and carbon dioxide generated from the above resin components (that is, organic components in the decomposition gas) to the resin components Q 2 (weight) when the 0/0) were in the range of 5 ⁇ Q 2 ⁇ 50, since the combustion by igniting the cracked gas becomes low potential to continue, the flame retardancy becomes better.
- FIG. 1 shows 240 of the epoxy resin compositions of Examples and Comparative Examples.
- 6 is a graph showing flexural modulus E at C ⁇ 20 ° C. BEST MODE FOR CARRYING OUT THE INVENTION
- the epoxy resin composition (1) of the present invention comprises the above components (A) to (D) as essential components, and contains an inorganic filler (C) in a cured product obtained by curing the composition.
- the amount of W (wt 0/0) in a case where the flexural modulus of elasticity at 240 ⁇ 20 ° C of the cured product was E (kgf / mm 2), the flexural modulus E is, 30 ⁇ W ⁇ 60 of When 0.015 W + 4. 1 ⁇ E ⁇ 0.27W + 21.8, the numerical value becomes 0.30W-13 ⁇ E ⁇ 3.7W- 1 84 when 60 ⁇ W ⁇ 95 It shows a numerical value.
- the flexural modulus E when the flexural modulus E is 30 ⁇ W ⁇ 60, E is 0.015W If the number is 4.1 and the value is 0.3 OW—13 when 60 W ⁇ 95, the foam layer is too soft and fragile, and the formation of the foam layer is effective. Since it does not occur, it is difficult to achieve sufficient flame retardancy.
- the flexural modulus E when the flexural modulus E is 30 ⁇ W and 60, E> 0.2 W + 21.8, and when 60 ⁇ W ⁇ 95, E> 3.7 W-184 In such a case, the layer of the cured product is too hard and the formation of a foamed layer does not effectively occur, so that it is difficult to achieve flame retardancy of + minutes.
- the more preferable value of the flexural modulus E is 0.015W + 7.1 ⁇ E ⁇ 0.27W + 6.8 when 30 ⁇ W ⁇ 60, and 0.3 when 60 ⁇ W95. 0W- 10 ⁇ E ⁇ 3.7 7W- 1 99
- the content of the inorganic filler (C) in the cured product is preferably contained in the range of W (weight%) force 30 ⁇ W ⁇ 95.
- W weight% force 30 ⁇ W ⁇ 95.
- the content W is contained in the region of W ⁇ 30, the foamed layer is too soft and easily broken, and the formation of the foamed layer does not effectively occur, so that it is difficult to achieve sufficient flame retardancy.
- the content W is in the range of W> 95, the layer of the cured product is too hard to form a foamed layer effectively, so that it is still difficult to achieve sufficient flame retardancy.
- more preferable values of the content W of the inorganic filler (C) are numerical values included in three and eighty-seven regions. In the case of W 87, the moldability of the epoxy resin composition is lowered, which may not be preferable.
- the epoxy resin composition (2) of the present invention contains the above components (A) to (D) as essential components, and the content of the inorganic filler (C) in a cured product obtained by curing the composition. Is set to W (% by weight), force, and the heat-resistant container in which the cured product is measured is set in a tubular furnace in which the atmosphere is made inert by using a constant flow of inert gas, and 700 ⁇ 10 The weight ratio of carbon monoxide and carbon dioxide generated when the cured product was thermally decomposed at 1 ° C.
- the value, carbon monoxide and carbon dioxide generated from the resin component corresponds to the weight ratio non-organic resin of component (a flame retardant component) in ie decomposition gas
- the value Q 2 is It corresponds to the gas component other than carbon monoxide and carbon dioxide generated from the resin component, that is, the weight ratio of the organic component (combustible component) in the cracked gas to the resin component.
- the resin component means an epoxy resin, a funum-based resin (curing agent), and an additive of an organic component (a release agent, a coupling agent, carbon black, etc.).
- the resin layer of the cured product is insufficiently foamed and is insufficient to make the cured product flame-retardant. Flame-retardant properties are reduced due to the lack of a foam layer.
- the value Q 2 is included in the range of Q 2 > 50, the ratio of combustible components in the decomposed gas is high, so that the decomposed gas is secondarily ignited and the combustion is easily continued. However, even when a foamed layer is formed, the flame retardancy of the cured epoxy resin tends to decrease. More preferable values of the above and Q 2 are numerical values such that 0 1 10 and 5 ⁇ Q 2 ⁇ 45, respectively.
- the epoxy resin composition (3) of the present invention has both the constitutional requirements and the effects of the epoxy resin compositions (1) and (2) of the present invention described above.
- the epoxy resin composition of the present invention (3), the value E, W, and is in respect Q 2 the same as described with respect to the epoxy resin composition of the present invention (1) ⁇ Pi (2) is there.
- the epoxy resin compositions (1) to (4) of the present invention preferably contain aromatics and / or polyaromatics in the cross-linked structure of the cured product, whereby the flame retardancy of the cured product is obtained. , Heat resistance and moisture resistance are further improved.
- the aromatics and / or polyaromatics are particularly preferably one or more selected from phenyl derivatives and biphenyl derivatives, whereby the cured product has flame retardancy, heat resistance, and moisture resistance. Is further improved.
- the epoxy resin composition of the present invention for example, the following can be used as the epoxy resin (A), the phenol resin (B), the inorganic filler (C), and the curing accelerator (D).
- the present invention is not limited to these.
- the epoxy resin (A) is characterized in that aromatics and / or Z or polyaromatics are included in the crosslinked structure of the cured epoxy resin, and preferably one or more of a fuunyl derivative and a biphenyl derivative are included. And an epoxy resin containing an aromatic compound and Z or a polyaromatic compound in the molecule, preferably a phenyl derivative having no epoxy group, a biphenyl derivative, and an aromatic compound having 3 to 4 epoxy groups bonded thereto. Epoxy resins containing at least one of the following can be particularly preferably used.
- the epoxy resin containing a phenol derivative having no epoxy group includes, for example, a phenol phenyl aralkyl epoxy resin of the following formula (1)
- the epoxy resin containing the bibutenyl derivative includes:
- a phenol biphenyl aralkyl epoxy resin represented by the following formula (2) a biphenyl-4,4′-diglycidyl ether epoxy resin represented by the formula (4) and 3,3 ′, 5,5′-tetramethylbiphenyl
- the epoxy resin containing an aromatic compound having 3 to 4 epoxy groups bonded include a tetraphenylolethane-type epoxy resin represented by the following formula (3). Resins.
- epoxy resins containing a polyaromatic compound in the molecule a naphthol aralkyl type epoxy resin containing a naphthalene derivative may be used.
- epoxy resins containing an aromatic compound in the molecule for example, bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin of the following formula (8), and the like A body may be used.
- the epoxy resin (A) one type may be used alone, or two or more types may be used in combination.
- the phenolic resin (B) contains aromatics and / or polyaromatics in the crosslinked structure of the cured epoxy resin, and preferably contains at least one of a phenyl derivative and a biphenyl derivative. It is particularly preferable to use a phenolic resin containing an aromatic compound and / or a polyaromatic compound in the molecule thereof, and preferably a phenolic resin containing at least one of a phenyl derivative having no hydroxyl group and a biphenyl derivative. it can. In this case, a phenolic resin containing a fuunyl derivative having no hydroxyl group is used. Examples thereof include a phenol phenyl aralkyl resin represented by the following formula (9).
- phenolic resin containing a biphenyl derivative having no hydroxyl group examples include, for example, the following formulas (10) and (13) Phenol biphenyl-aralkyl resin). Further, among phenolic resins containing polyaromatics in the molecule, a naphthol aralkyl-type resin containing a naphthalene derivative may be used. As the phenolic resin (B), one type may be used alone, or two or more types may be used in combination. Of these, phenol biphenyl aralkyl resins are particularly preferred in terms of flame retardancy.
- the epoxy resin containing aromatics and / or polyaromatics in the molecule is preferably contained in the total epoxy resin in an amount of 30 to 100% by weight from the viewpoint of improving flame retardancy.
- the above-mentioned phenolic resin containing aromatics and / or polyaromatics in the molecule is contained in an amount of 30 to 100% by weight in the total phenolic resin in view of improving the flame retardancy. Is preferred.
- the ratio (OH / Ep) of the ratio of the number of phenolic hydroxyl groups (OH) of the total phenolic resin to the number of epoxy groups (Ep) of the total epoxy resin (OH / Ep) is 1.0 ⁇ (OH / Ep) ⁇ 2.5. It is more suitable for improving the flame retardancy of a cured product obtained by curing the above.
- the (OH / Ep) force (OH / Ep) ⁇ 1.0 the crosslinked structure in which the epoxy resin and the phenolic resin in the cured product are formed when the cured product is thermally decomposed or ignited. Since the amount of flammable components such as aryl alcohol derived from epoxy groups remaining in the resin increases, the improvement in flame retardancy may be hindered.
- (OH / Ep)> 2.5 the cured product obtained by curing the epoxy resin composition has too low a crosslink density, so that the curing of the resin composition becomes insufficient. The heat resistance and strength of the cured product may be insufficient.
- inorganic filler (C) those generally used in semiconductor encapsulation resins can be widely used, and examples thereof include fused silica powder, crystalline silica powder, alumina powder, silicon nitride, and glass fiber.
- fused silica powder crystalline silica powder
- alumina powder silicon nitride
- glass fiber glass fiber.
- the inorganic filler (C) one type may be used alone, or two or more types may be used in combination.
- the curing accelerator (D) those generally used in semiconductor encapsulating resins can be widely used, and any one can be used as long as it accelerates the curing reaction between the epoxy group and the funolic hydroxyl group. , Trifidylphosphine, 2-methylimidazo And 1,8-diazabicyclo [5,4,0] indene-17.
- the curing accelerator (D) one type may be used alone, or two or more types may be used in combination.
- a coloring agent such as carbon black and a silane cup such as ⁇ -glycidoxypropyltrimethoxysilane may be added to the epoxy resin composition of the present invention, if necessary.
- a coloring agent such as carbon black and a silane cup such as ⁇ -glycidoxypropyltrimethoxysilane
- Various additives such as a ring agent, low-stress components such as silicone oil and silicone rubber, natural wax, synthetic wax, higher fatty acids and their metal salts, and release agents such as paraffin may be appropriately compounded.
- the epoxy resin composition of the present invention can be produced, for example, by preliminarily kneading the constituent materials with a ribbon blender or a hen-shell mixer and then mixing them with a heating roll or a kneader. Then, the epoxy resin composition is degassed, if necessary, with an organic solvent and water, and then heated under a predetermined molding condition by a transfer molding machine or a hot press molding machine to cause a crosslinking reaction. By curing the cured product, a molded article of a cured epoxy resin having high flame retardancy can be obtained.
- the semiconductor device of the present invention is one in which an electronic component such as a semiconductor is sealed using the epoxy resin composition of the present invention.
- the semiconductor device of the present invention includes, for example, a semiconductor device in which a semiconductor element is mounted on a die pad of a lead frame, and these are connected by wire bonding and sealed with a resin. Examples include, but are not limited to, resin-encapsulated semiconductor devices of the formula and resin-encapsulated semiconductor devices of a ball grid array, and the semiconductor device of the present invention is intended for electronic components such as semiconductors. It covers all those sealed with the epoxy resin composition of the present invention.
- C epoxy equivalent 238 g / eq)
- Epoxy resin 2 phenol biphenyl-aralkyl epoxy resin of the following formula (2)
- 'Epoxy resin 4 Biphenyl 4,4' diglycidyl ether epoxy resin of the following formula (4) and 3,3 ', 5,5'-tetramethylbiphenyl 4,4, diglycidyl ether epoxy Epoxy resin composition mainly composed of resin
- Epoxy resin 5 Cresol novolak epoxy resin of the following formula (5)
- 'Epoxy resin 6 Dicyclopentadiene type epoxy resin of the following formula (6)
- Epoxy resin 7 Combination of bisphenol A type epoxy resin of the following formula (7) and brominated bisphenol A type epoxy resin
- 'Epoxy resin 8 Bisphenol A type epoxy resin of the following formula (8)
- Phenol resin 4 Dicyclopentadiene-type phenol tree of the following formula (12) Fat
- Phenolubif of the following formula (13): Eralkyl resin (n 0 to 2, softening point 100 ° C, hydroxyl equivalent 196 g / eq)
- 'Aminic curing agent 1 diaminodiphenylmethane of the following formula (14)
- the fused silica used in Examples 1, 2, 5, 6, 9, 10, 13, 14, 14, 18, 21, and 22 and Comparative Examples 1 to 5, 11, and 12 had an average particle size. 1 5 / zm, a specific surface area 2. 2m 2 / g.
- the force is average particle size 22 / zm, specific surface area 5.0m 2 Zg.
- the resin composition (tablet) obtained by solidifying the resin composition shown in Example 1 above into tablets (tablets) was used under the specified conditions (single plunger type transfer molding machine, molding temperature: 175 ° C, tablet preheating: 85 ° C). After molding at a molding time of 120 seconds, an injection time of 15 seconds, and an injection pressure of 100 kgf / cm 2 (execution pressure), post-curing (175 ° C, 4 hours) was performed to obtain a cured product.
- a molded plate for flexural modulus measurement according to JIS K6911 and a molded plate for flame retardancy test according to UL 94 Flame Retardancy Standard were prepared.
- a measurement of a flexural modulus and a flame retardancy test were performed.
- the shaped plate after the flame retardancy test was cut and processed, and the cross section was observed with a reflection fluorescence microscope. Gas analysis (measurement of ⁇ and ⁇ ) was performed using the cured product.
- the solder cracking resistance was determined by using a 7.5 mm x 7.5 mm x 350 / m silicon chip (tablet) obtained by hardening the resin composition shown in Example 1 above into a tablet shape (tablet). Under the conditions (single plunger type transfer molding machine, molding temperature 175 ° C, tablet preheating 85 ° C, molding time 120 seconds, injection time 15 seconds, injection pressure 100 kgf / cm 2 (execution pressure)) The 80-pin QFP (14 x 20 x 2.7 mm) semiconductor device obtained by encapsulation was evaluated using a device that was post-cured (175 ° C, 4 hours).
- Moisture resistance and wiring corrosion resistance are aluminum wiring with line width and line spacing of 10 / im (However, the tip is 70 m square on each side) 3.
- OmmX 3.5mmX 350m silicon chip is mounted on a 42-alloy for 16-pin DIP (nickel 42%, cobalt chromium about lo / o , After mounting on a frame made of iron alloy, the pad portion was wire-bonded with a gold wire having a diameter of 28 / m.
- Example 1 The resin composition shown in Example 1 above was solidified into a tablet ( Using a tablet), under the specified conditions (single plunger type transfer molding machine, molding temperature 175 ° C, tablet preheating 85 ° C, molding time 120 seconds, injection time 15 seconds, injection pressure Using a 16-pin DIP-type (18 x 5 x 3 mm) semiconductor device obtained by encapsulating at 100 kgf cm 2 (operating pressure) and post-curing (175 ° C, 4 hours) evaluated.
- the specified conditions single plunger type transfer molding machine, molding temperature 175 ° C, tablet preheating 85 ° C, molding time 120 seconds, injection time 15 seconds, injection pressure
- 16-pin DIP-type (18 x 5 x 3 mm) semiconductor device obtained by encapsulating at 100 kgf cm 2 (operating pressure) and post-curing (175 ° C, 4 hours) evaluated.
- DBU 1,8-diazabicyclo [5,4,0] ndenecene 7
- Example 21 and Comparative Example 11 Using the cured products of Example 21 and Comparative Example 11, a molded plate for measuring the flexural modulus in accordance with JIS K6911 and a molded plate for the flame retardancy test in accordance with UL 94 Flame Retardancy Standard were prepared. did. Using the molded plate, measurement of flexural modulus and flame retardancy test were performed. The molded plate after the flame retardancy test was cut and processed, and the cross section was observed with a reflection fluorescence microscope. Also, it was gas analysis (measurement of Qi and Q 2) using the cured product.
- Flexural modulus measurement A measurement test of the flexural modulus E (kgf / mm 2 ) at 240 ° C. was performed in accordance with JISK6911. The evaluation criteria were as follows.
- the IR reflow was increased to 240.
- the test was performed three times under the conditions of ° C and 10 seconds, and the presence or absence of cracks (internal cracks and external cracks) was observed with an ultrasonic survey imaging device. From the results, the number of packages in which cracks occurred was measured and used as an index of solder crack resistance. That is, it can be said that the smaller the number is, the more excellent the solder crack resistance is.
- test semiconductor devices After processing 10 test semiconductor devices sealed in a 16-pin DIP type in a 185 ° C constant-temperature bath for a specified period of time (500 hours, 720 hours), they are symmetrically positioned across the chip of this device. The resistance between each pin was measured (total of 8 points), and the average value was calculated. If the difference between this value and the resistance value (blank) of the device not subjected to the above treatment was 20% or more with respect to the blank, the device was regarded as defective.
- the defect rate the number of shingles that were deemed to be defective was defined as the defect rate, and this was used as an index of wiring corrosion resistance. In other words, it can be said that the lower the value, the more excellent the wiring corrosion resistance.
- a magnetic boat containing a cured product (here, 0.1 lg) containing inorganic filler in W (% by weight) was set in a tubular furnace (manufactured by LI NDOBERG), and pyrolysis temperature: 70 ⁇ ⁇ 10 ° C, pyrolysis time: 10 minutes, atmosphere gas: nitrogen (N 2 ), atmosphere gas supply: 0.5 L / min
- the components are collected in a gas bag and used for gas chromatography / thermal conductivity detector (G C / TCD) to determine the weight ratio q (weight./o) of carbon monoxide and carbon dioxide generated per unit weight of the cured product.
- the weight ratio q 2 (weight) of the carbide and inorganic filler remaining without decomposition was weighed.
- q 3 weight ratio of the component (the resin component) other than the inorganic filler (C) contained in the cured product
- Example 21 Each sample was prepared in the same manner as in Example 21 in accordance with the composition shown in Table 5, and then various characteristics were evaluated in the same manner as in Example 21. The evaluation results are shown in Table 5 and FIG.
- Epokin Tree D 4 (wt%) 16.58 12.22 7.87 ⁇ .. ⁇ Epokin Tree S 5 (wt%)
- Epoxy resin 6 (wt%)
- Epoxy resin 7 (wt%)
- Phenol resin 2 (wt%) 20.23 14.91 9.81 7.83 Phenol resin 3 (wt%)
- T.P.P. (wt%) 0.40 0.30 0.19 0.16 Silane coupling agent (wt) 1.57 1.16 0.75 0.61 Power Bon Black (wt%) 0.75 0.53 0.34 0.28
- Epokin resin 3 (wt%), 0
- Fused spherical silica 81.0 84.5 Carnauba wax (Wt%) 0.51 0.38 0.24 0.20
- T.P.P. 0.40 0.30 0.19 0.16 Silane coupling agent (wt%) 1.57 1.16 0.75 0.61 Carbon black (wt%) 0.71 0.53 0.34 0.28
- Epoxy resin 2 (wt%)
- Epoxy resin 4 (wt%)
- Epoxy resin 6 (wt%)
- Epoxy resin 7 (wt%)
- Phenolic resin 1 (wt%) ⁇ 5 oi3 ⁇ ⁇ .t) 4
- Fused spherical silica 81.0 84.5 Carnauba wax (wt%) 0.51 0.38 0.24 0.20
- T.P.P. 0.40 0.30 0.19 0.16 Silane coupling agent (wt%) 1.57 1.16 0.75 0.61 Carbon black (wt%) 0.71 0.53 0.34 0.28
- Epoxy resin 4 (wt%)
- Epoxy resin 6 (wt%)
- T.P.P. (wt%) 0.40 0.30 0.19 0.16 0.16 Silane coupling agent (wt% 1.57 1.16 0.75 0.61 0.61 Carbon black (wt%) 0.71 0.53 0.34 0.28 0.28
- Epoxy resin 2 (wt%) 12.54 6.60 5.4 5.23 Epoxy resin 3 (wt%) 2.51 1.32 1.08
- Epoxy resin 4 (wt%)
- Epoxy resin 6 (wt%)
- Phenolic resin 2 (wt) 12.08 6.33 7.77 3.97 phenolic resin 3 (wt%)
- T.P.P. 0.30 0.16 0.16 0.10
- Epoxy resin 2 (wt%)
- Epoxy resin 4 (wt%)
- T.P.P. (wt%) 0.46 0.40 0.40 0.30 0.30 Silane coupling agent (wt% 1.77 1.57 1.57 1.16 1.16 Power Bon Black (wt%) 0.81 0.71 0.71 0.53 0.53
- Epoxy resin 2 (wt%) ⁇ ⁇ 1 ⁇ ⁇ Epoxy resin 3 (wt%)
- Epoxy resin 4 (wt%)
- Epoxy resin 7 (wt%)
- Phenolic resin 2 (wt) o 0.66 Phenolic resin 3 (wt%) 6.18 5.04 2.64 Phenolic resin 4 (wt) 7 o.22 5.89
- T.P.P. (wt%) 0.19 0.19 0.16 0.16 0.10 Silane coupling agent (wt% 0.75 0.75 0.61 0.61 0.39 Carbon black (wt%) 0.34 0.34 0.28 0.28 0.18
- Moisture resistance 100 hours 2 2 1 1 1 Failure rate (pcs) 200 hours 4 5 3 3 2 Wiring corrosion resistance: 500 hours 4 3 3 2 2 Failure rate (pcs) 720 hours 6 6 5 4 3
- the cured product of the epoxy resin composition of the present invention has a flexural modulus at a high temperature (240 ⁇ 20 ° C.) within a predetermined range, and exhibits thermal decomposition or ignition. Since a foam layer is sometimes formed, it can be seen that higher flame retardancy can be achieved than a cured product of the epoxy resin composition having a high-temperature flexural modulus out of a predetermined range as shown in Comparative Examples.
- the resin layer expands like rubber due to the gas component generated by decomposition of the resin component during thermal decomposition or ignition, and a foam layer is formed.
- the combustible component contained therein that is, the organic component having a low boiling point is ignited and the combustion continues, so the amount of the organic component generated greatly affects the flame retardancy.
- the cured product of the epoxy resin composition of the present invention prior Symbol numerical and Q 2, respectively 5, for showing the numerical value of 5 ⁇ Q 2 5 0, good flame retardancy
- the resulting cured product of the epoxy resin compositions shown in Comparative examples, Q, and for Q 2 showed value outside the range of the, also revealed in particular difficulty in obtaining flame retardancy was.
- the semiconductor device using the epoxy resin yarn having good flame retardancy was excellent in reliability, for example, solder crack resistance, moisture resistance, and resistance to wiring corrosion at high temperatures. Industrial applicability
- the effect of the present invention is to have high flame retardancy without using any conventional flame retardant such as halogen-based flame retardant and phosphorus-based flame retardant, and without particularly increasing the amount of inorganic filler,
- An object of the present invention is to provide an epoxy resin composition and a semiconductor device using the same, which are excellent in reliability, particularly in solder crack resistance and moisture resistance. Furthermore, since halogen-based flame retardants and diantimony trioxide are not used, the problem that halogens and antimony derived from flame retardants and flame retardant aids promote corrosion of wiring in semiconductor devices at high temperatures, unlike conventional products, is solved. And to improve the reliability of the semiconductor device.
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Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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DE69934716T DE69934716T8 (de) | 1998-10-21 | 1999-10-20 | Flammhemmende harzzusammensetzung und die daraus hergestellte halbleitervorrichtung |
EP99949323A EP1142923B1 (en) | 1998-10-21 | 1999-10-20 | Flame-retardant epoxy resin composition and semiconductor device made using the same |
US09/830,016 US7098276B1 (en) | 1998-10-21 | 1999-10-20 | Flame-retardant epoxy resin composition and semiconductor device made using the same |
US11/477,524 US7799852B2 (en) | 1998-10-21 | 2006-06-30 | Composition of biphenyl epoxy resin, phenolbiphenylaralkyl resin and filler |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP29960698A JP3349963B2 (ja) | 1998-10-21 | 1998-10-21 | 難燃性エポキシ樹脂組成物及びそれを用いた半導体装置 |
JP10/299606 | 1998-10-21 |
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US09830015 A-371-Of-International | 1999-10-20 | ||
US11/477,524 Division US7799852B2 (en) | 1998-10-21 | 2006-06-30 | Composition of biphenyl epoxy resin, phenolbiphenylaralkyl resin and filler |
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WO2000023494A1 true WO2000023494A1 (en) | 2000-04-27 |
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PCT/JP1999/005787 WO2000023494A1 (en) | 1998-10-21 | 1999-10-20 | Flame-retardant epoxy resin composition and semiconductor device made using the same |
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US (2) | US7098276B1 (ja) |
EP (2) | EP1142923B1 (ja) |
JP (1) | JP3349963B2 (ja) |
KR (1) | KR100443110B1 (ja) |
AT (2) | ATE442394T1 (ja) |
DE (2) | DE69941409D1 (ja) |
MY (1) | MY145752A (ja) |
TW (1) | TWI225074B (ja) |
WO (1) | WO2000023494A1 (ja) |
Cited By (1)
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WO2001042360A1 (fr) * | 1999-12-08 | 2001-06-14 | Nec Corporation | Composition de resine epoxyde ignifuge et stratifie obtenu a partir de celle-ci |
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JP3349963B2 (ja) | 1998-10-21 | 2002-11-25 | 日本電気株式会社 | 難燃性エポキシ樹脂組成物及びそれを用いた半導体装置 |
JP4743932B2 (ja) * | 2000-02-17 | 2011-08-10 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
JP2002012741A (ja) * | 2000-06-27 | 2002-01-15 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
JP4742414B2 (ja) * | 2000-10-04 | 2011-08-10 | 住友ベークライト株式会社 | 半導体装置 |
JP2002226557A (ja) * | 2001-01-30 | 2002-08-14 | Dainippon Ink & Chem Inc | 難燃性エポキシ樹脂組成物 |
JP2003268079A (ja) * | 2002-03-18 | 2003-09-25 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
JP4251612B2 (ja) * | 2003-01-30 | 2009-04-08 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | エポキシ含有物質を含むネガ型感光性樹脂組成物 |
JP4397601B2 (ja) * | 2003-02-06 | 2010-01-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フェノール−ビフェニレン樹脂を含むネガ型感光性樹脂組成物 |
US7300796B2 (en) * | 2003-09-09 | 2007-11-27 | International Business Machines Corporation | Pressurized oxygen for evaluation of molding compound stability in semiconductor packaging |
JP5170493B2 (ja) | 2005-10-14 | 2013-03-27 | エア・ウォーター株式会社 | フェノール系重合体、その製法及びその用途 |
JPWO2010053207A1 (ja) * | 2008-11-07 | 2012-04-05 | 住友ベークライト株式会社 | 感光性樹脂組成物、感光性接着フィルムおよび受光装置 |
JP6124865B2 (ja) | 2012-02-23 | 2017-05-10 | 新日鉄住金化学株式会社 | 多価ヒドロキシ樹脂、エポキシ樹脂、それらの製造方法、エポキシ樹脂組成物及びその硬化物 |
KR101385005B1 (ko) * | 2012-04-25 | 2014-04-16 | 국도화학 주식회사 | 에폭시몰딩컴파운드용 자기소화성 에폭시 수지 및 그 제법, 에폭시몰딩컴파운드용 에폭시 수지 조성물 |
JP6406847B2 (ja) | 2014-03-26 | 2018-10-17 | 新日鉄住金化学株式会社 | 変性多価ヒドロキシ樹脂、エポキシ樹脂、エポキシ樹脂組成物及びその硬化物 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07238141A (ja) * | 1994-03-02 | 1995-09-12 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物 |
JPH08245754A (ja) * | 1995-03-13 | 1996-09-24 | Toshiba Chem Corp | エポキシ樹脂組成物および半導体封止装置 |
JPH08253551A (ja) * | 1995-03-14 | 1996-10-01 | Yuka Shell Epoxy Kk | 半導体封止用エポキシ樹脂組成物 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5738814A (en) * | 1980-08-20 | 1982-03-03 | Mitsubishi Petrochem Co Ltd | Production of polyepoxy compound |
JPS58150581A (ja) * | 1982-03-02 | 1983-09-07 | Mitsubishi Petrochem Co Ltd | ポリエポキシ化合物の製造方法 |
JPH0788418B2 (ja) * | 1987-05-08 | 1995-09-27 | 宇部興産株式会社 | エポキシ樹脂組成物 |
JP2568584B2 (ja) * | 1987-10-15 | 1997-01-08 | 日東電工株式会社 | 半導体装置 |
JP2843612B2 (ja) * | 1989-09-21 | 1999-01-06 | 東レ・ダウコーニング・シリコーン株式会社 | エポキシ樹脂組成物 |
JPH03210322A (ja) * | 1990-01-11 | 1991-09-13 | Toshiba Chem Corp | 封止用樹脂組成物および半導体装置 |
JP2823633B2 (ja) * | 1990-02-20 | 1998-11-11 | 住友ベークライト株式会社 | エポキシ樹脂組成物 |
KR950011902B1 (ko) | 1990-04-04 | 1995-10-12 | 도오레 가부시끼가이샤 | 반도체 장치 캡슐 봉입 에폭시 수지 조성물 |
JPH08333428A (ja) | 1990-07-10 | 1996-12-17 | Mitsui Toatsu Chem Inc | 低軟化点フェニルフェノールアラルキル樹脂およびその樹脂を用いたエポキシ樹脂組成物 |
JP3205566B2 (ja) | 1991-02-08 | 2001-09-04 | 新日鐵化学株式会社 | 多官能エポキシ樹脂及びその製造方法 |
JPH04258624A (ja) * | 1991-02-09 | 1992-09-14 | Toshiba Chem Corp | 封止用樹脂組成物及び半導体封止装置 |
JP2922672B2 (ja) | 1991-05-08 | 1999-07-26 | 日東電工株式会社 | 半導体装置の製法 |
JPH0597965A (ja) | 1991-10-04 | 1993-04-20 | Mitsui Toatsu Chem Inc | エポキシ樹脂組成物 |
JPH0597970A (ja) * | 1991-10-07 | 1993-04-20 | Shin Etsu Chem Co Ltd | 熱硬化性樹脂組成物及び半導体装置 |
JP2978313B2 (ja) | 1991-11-15 | 1999-11-15 | 日東電工株式会社 | 半導体装置およびそれに用いる半導体封止用エポキシ樹脂組成物 |
JP3147317B2 (ja) | 1991-12-24 | 2001-03-19 | 三井化学株式会社 | エポキシ樹脂組成物 |
DE69307442T2 (de) * | 1992-09-21 | 1997-08-21 | Sumitomo Bakelite Co | Epoxidharzzusammensetzung auf Basis des Diglycidylethers von Biphenyldiol |
US5416138A (en) * | 1992-09-24 | 1995-05-16 | Sumitomo Bakelite Company Limited | Epoxy resin composition |
JP2948056B2 (ja) | 1993-05-12 | 1999-09-13 | 住金ケミカル株式会社 | 半導体封止用樹脂組成物 |
JP3010110B2 (ja) | 1993-11-04 | 2000-02-14 | 日東電工株式会社 | 半導体装置 |
JPH07153873A (ja) | 1993-11-26 | 1995-06-16 | Nitto Denko Corp | 半導体装置 |
JPH07196772A (ja) * | 1993-12-30 | 1995-08-01 | Hitachi Chem Co Ltd | 電子部品封止用エポキシ樹脂成形材料 |
JPH07216059A (ja) | 1994-01-26 | 1995-08-15 | Mitsui Toatsu Chem Inc | エポキシ樹脂組成物およびこれを用いた半導体装置 |
EP0749996B1 (en) * | 1995-01-05 | 2004-08-18 | Sumitomo Bakelite Co., Ltd. | Epoxy resin composition |
JP3632936B2 (ja) * | 1995-01-18 | 2005-03-30 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP2896634B2 (ja) * | 1995-03-02 | 1999-05-31 | 富士ゼロックス株式会社 | 全文登録語検索装置および全文登録語検索方法 |
JPH08301984A (ja) | 1995-03-09 | 1996-11-19 | Toray Ind Inc | 半導体封止用エポキシ樹脂組成物および半導体装置 |
JPH093161A (ja) * | 1995-06-20 | 1997-01-07 | Toshiba Chem Corp | エポキシ樹脂組成物および半導体封止装置 |
JP3573530B2 (ja) * | 1995-06-22 | 2004-10-06 | 日本化薬株式会社 | エポキシ樹脂混合物、エポキシ樹脂組成物およびその硬化物 |
WO1997003129A1 (en) * | 1995-07-10 | 1997-01-30 | Toray Industries, Inc. | Epoxy resin composition |
JPH09208808A (ja) | 1996-02-07 | 1997-08-12 | Toshiba Chem Corp | エポキシ樹脂組成物および半導体封止装置 |
JPH09268219A (ja) * | 1996-03-29 | 1997-10-14 | Nippon Kayaku Co Ltd | ノボラック型樹脂、エポキシ樹脂、エポキシ樹脂組成物及びその硬化物 |
JP3611002B2 (ja) | 1996-08-08 | 2005-01-19 | 信越化学工業株式会社 | エポキシ樹脂組成物、その製造方法及び半導体装置 |
JP3618182B2 (ja) | 1996-10-29 | 2005-02-09 | 日東電工株式会社 | 半導体封止用エポキシ樹脂組成物 |
JP3649540B2 (ja) * | 1996-12-27 | 2005-05-18 | 住友ベークライト株式会社 | エポキシ樹脂組成物 |
US6054222A (en) * | 1997-02-20 | 2000-04-25 | Kabushiki Kaisha Toshiba | Epoxy resin composition, resin-encapsulated semiconductor device using the same, epoxy resin molding material and epoxy resin composite tablet |
JP3806222B2 (ja) * | 1997-04-18 | 2006-08-09 | 新日鐵化学株式会社 | エポキシ樹脂組成物及びその硬化物 |
JP3074155B2 (ja) | 1997-10-20 | 2000-08-07 | 日東電工株式会社 | 半導体装置 |
JPH11140277A (ja) * | 1997-11-10 | 1999-05-25 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及びこれを用いた半導体装置 |
JPH11140166A (ja) * | 1997-11-11 | 1999-05-25 | Shin Etsu Chem Co Ltd | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP3388537B2 (ja) * | 1998-05-15 | 2003-03-24 | 信越化学工業株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP2000103839A (ja) | 1998-09-25 | 2000-04-11 | Matsushita Electric Works Ltd | 封止用樹脂組成物及び半導体装置 |
JP3349963B2 (ja) | 1998-10-21 | 2002-11-25 | 日本電気株式会社 | 難燃性エポキシ樹脂組成物及びそれを用いた半導体装置 |
JP4421810B2 (ja) | 2002-06-24 | 2010-02-24 | 日本電気株式会社 | 難燃性エポキシ樹脂組成物及びそれを用いた半導体装置 |
-
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- 1998-10-21 JP JP29960698A patent/JP3349963B2/ja not_active Expired - Lifetime
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- 1999-10-20 KR KR10-2001-7004927A patent/KR100443110B1/ko active IP Right Grant
- 1999-10-20 DE DE69941409T patent/DE69941409D1/de not_active Expired - Lifetime
- 1999-10-20 WO PCT/JP1999/005787 patent/WO2000023494A1/ja active IP Right Grant
- 1999-10-20 US US09/830,016 patent/US7098276B1/en not_active Expired - Lifetime
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- 1999-10-20 EP EP06018889A patent/EP1739112B1/en not_active Expired - Lifetime
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- 1999-10-20 DE DE69934716T patent/DE69934716T8/de active Active
- 1999-10-21 MY MYPI99004547A patent/MY145752A/en unknown
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07238141A (ja) * | 1994-03-02 | 1995-09-12 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物 |
JPH08245754A (ja) * | 1995-03-13 | 1996-09-24 | Toshiba Chem Corp | エポキシ樹脂組成物および半導体封止装置 |
JPH08253551A (ja) * | 1995-03-14 | 1996-10-01 | Yuka Shell Epoxy Kk | 半導体封止用エポキシ樹脂組成物 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001042360A1 (fr) * | 1999-12-08 | 2001-06-14 | Nec Corporation | Composition de resine epoxyde ignifuge et stratifie obtenu a partir de celle-ci |
Also Published As
Publication number | Publication date |
---|---|
US7799852B2 (en) | 2010-09-21 |
EP1142923A4 (en) | 2002-06-26 |
ATE350411T1 (de) | 2007-01-15 |
DE69934716T2 (de) | 2007-10-25 |
DE69934716D1 (de) | 2007-02-15 |
DE69934716T8 (de) | 2008-04-30 |
EP1739112B1 (en) | 2009-09-09 |
US7098276B1 (en) | 2006-08-29 |
ATE442394T1 (de) | 2009-09-15 |
MY145752A (en) | 2012-03-30 |
KR100443110B1 (ko) | 2004-08-04 |
TWI225074B (en) | 2004-12-11 |
KR20010080252A (ko) | 2001-08-22 |
US20060247393A1 (en) | 2006-11-02 |
JP3349963B2 (ja) | 2002-11-25 |
EP1739112A1 (en) | 2007-01-03 |
JP2000129092A (ja) | 2000-05-09 |
DE69941409D1 (de) | 2009-10-22 |
EP1142923B1 (en) | 2007-01-03 |
EP1142923A1 (en) | 2001-10-10 |
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