WO1995016797A1 - Molybdenum-tungsten material for wiring, molybdenum-tungsten target for wiring, process for producing the same, and molybdenum-tungsten wiring thin film - Google Patents
Molybdenum-tungsten material for wiring, molybdenum-tungsten target for wiring, process for producing the same, and molybdenum-tungsten wiring thin film Download PDFInfo
- Publication number
- WO1995016797A1 WO1995016797A1 PCT/JP1994/002095 JP9402095W WO9516797A1 WO 1995016797 A1 WO1995016797 A1 WO 1995016797A1 JP 9402095 W JP9402095 W JP 9402095W WO 9516797 A1 WO9516797 A1 WO 9516797A1
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- WIPO (PCT)
- Prior art keywords
- target
- wiring
- tungsten
- molybdenum
- wiring formation
- Prior art date
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- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 title abstract 4
- 230000008569 process Effects 0.000 title description 5
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 37
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 30
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011733 molybdenum Substances 0.000 claims abstract description 18
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- 239000000203 mixture Substances 0.000 claims description 38
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/09—Mixtures of metallic powders
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
- Y10T428/1284—W-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2933—Coated or with bond, impregnation or core
- Y10T428/294—Coated or with bond, impregnation or core including metal or compound thereof [excluding glass, ceramic and asbestos]
- Y10T428/2951—Metal with weld modifying or stabilizing coating [e.g., flux, slag, producer, etc.]
Definitions
- M0-W material for wiring formation M0-W target for wiring formation and its manufacturing method
- the present invention relates to a Mo—W material for forming a wiring, a Mo—W target for forming a spring, a method of manufacturing the same, and a Mo—fountain thin film.
- TFTs active matrix type liquid crystal display devices using thin film transistors (hereinafter, referred to as “TFTs”) formed using amorphous silicon (hereinafter, referred to as “a-Si”) films as switching elements.
- TFTs thin film transistors
- a-Si amorphous silicon
- One way to avoid gate pulse delay is to use addressing materials with lower resistivity to form address wires.
- an Mo—Ta alloy film is often used as an address wiring material.
- the resistivity of this alloy film is as large as about 40 ⁇ 'cm, it is considered difficult to realize a large-area display with the resistivity of the Mo—Ta alloy film.
- an E material having a resistivity of about 20; / ⁇ ⁇ cm or less is required.
- the new wiring materials described above include not only low resistivity, but also The following characteristics are also required. It is necessary to improve the step coverage of the interlayer insulating film formed on the paddle spring and improve the insulation between the paddle ISf spring formed on the interlayer insulating film and the tapering force. Have the required properties.
- FIG. 5 is a cross-sectional view of a TFT (switching element) and a storage capacitor portion used in the liquid crystal display device.
- a Mo—Ta alloy is sputtered on a glass substrate 1 to simultaneously form a gate electrode 2, an address wiring, and a Cs line 9.
- An a-Si active layer 4 is deposited via a gate insulating film 3 formed thereon. On both ends of the active layer 4, depositing a n T a- S i layer 5 a, 5 b. Then, an IT 0 pixel electrode 8 is formed via the gate insulating film 3.
- the source electrode 6 a of A 1 having a connection portion to the n + a- S i layer 5 a
- the drain electrode 6 b having a connection portion to a part of the n + a- S i layer 5 b and the pixel electrode 8
- the data wiring is formed at the same time.
- the data wiring and the like have excellent resistance to HF, which is an etchant for an interlayer insulating film, and to ITO etchant, which is a pixel electrode.
- the data wiring can be taped to improve the step coverage of the interlayer insulating film and increase the insulation between the data wiring and the pixel electrode.
- the present inventors systematically conducted experiments and studies on various metals and alloys as wiring materials in a display device such as a liquid crystal display device in order to achieve the above object, and as a result, the limited composition was obtained.
- the alloy film of molybdenum (Mo) and tungsten (W) in the range has a lower resistivity and good workability compared to the film composed of M0 or W alone.
- the M o-W material for forming a spring which is the first invention of the present invention, is characterized in that, when viewed as a whole, it is composed of 20 to 95% of tungsten in atomic percent, the balance being molybdenum and unavoidable impurities. .
- the wiring formation M o—W target according to the second invention of the present invention is viewed as a unit.
- it is characterized by 20 to 95 atomic percent tungsten, with the balance being molybdenum and unavoidable impurities.
- the Mo—W target for forming a wiring according to the present invention is composed of an M 0—W alloy composed of 20 to 95 atomic percent of tungsten, the balance of molybdenum and unavoidable impurities, and the M 0—W alloy has a relative density. Is not less than 99%, the average grain size of the crystal grains is 200 / im or less, and the hardness of the powder is Hv 350 or less.
- the Mo—W wiring thin film according to the third invention of the present invention is characterized in that it is composed of 20 to 95% by atom of tantasten in atomic percent, the remaining molybdenum and unavoidable impurities.
- the W target manufacturing method consists of the steps of molding a mixed powder adjusted to contain 20 to 95% of tungsten in atomic percent and the balance of molybdenum and unavoidable impurities, and inactivating the compact obtained in the molding step. It is characterized by comprising a step of sintering in an atmosphere and a step of hot working the sintered body obtained in the sintering step.
- the Mo-W material for forming i3 ⁇ 4 of the present invention is adjusted so that, when viewed as a single body, it is composed of 20 to 95% of tungsten in atomic percentage, molybdenum balance and unavoidable impurities.
- the wiring forming Mo—W material of the present invention is adjusted so that, when viewed as a single body, it is composed of 20 to 95% of tungsten in atomic percentage, molybdenum balance and unavoidable impurities.
- the ratio of W in the Mo— ⁇ ⁇ material described above is less than 20% in atomic percent, the resistance increases and the resistance to an etchant such as an interlayer insulating film or ITO decreases. On the other hand, if the ratio of W exceeds 95% in atomic percent, the resistance similarly increases. In other words, Mo-W materials with a W percentage in the range of 20-95% atomic percent are low It has resistance and excellent etchant resistance. Further, the above composition ratio
- the Mo-W material has an advantage that, for example, when a thin film is formed, taper processing is possible.
- the ratio of W in the 1 ° forming Mo—W material of the present invention is in the range of 20 to 70% in atomic percent.
- this W composition range for example, when a wiring thin film is formed by the sputtering method, a practically favorable sputtering rate can be obtained.
- the ratio of W in the range of 25 to 45% in atomic percent.
- the Mw—W material for forming a wiring according to the present invention contains as few impurities as possible (Mw—W target and Mw—W). — The same applies to the W wiring thin film).
- oxygen as an impurity is preferably 500 ppm or less, more preferably 200 ppm or less, preferably 100 ppm or less, and more preferably 50 ppm or less. This is because if there is too much oxygen, there are generally many vacancies (pores), which causes a decrease in density. Due to this decrease in density, generation of particles increases.
- reduction of the powder with hydrogen or improvement of the sinterability are employed.
- the Mo—W wiring thin film of the present invention is made of the Mo—W alloy having the above composition ratio.
- the reason for defining the composition ratio of W, the preferable composition range, and the like are as described above.
- the address wiring of a liquid crystal display device or the like made of such a Mo—Wi spring thin film acts as a low resistance component to a gate pulse. Therefore, the gate pulse transmitted through the address wiring is hardly affected by the delay effect due to the resistance of the address 1 mm. Therefore, a switching pulse for driving a liquid crystal or the like is provided with a gate pulse without delay.
- the M—W wiring thin film of the present invention can be tapered, the step coverage of the interlayer insulating film formed on the address wiring formed of the wiring thin film is improved. Accordingly, a high withstand voltage can be obtained between the wiring formed on the interlayer insulating film and the address wiring.
- the Mo-WEf spring thin film of the present invention further has excellent resistance to interlayer insulating films and etchants such as ITO. Therefore, the insulation between the data wiring and the pixel electrode can be improved. These have made the display area larger. Even in such a case, a highly reliable liquid crystal display device can be realized.
- the Mo-Wi-fo thin film of the present invention is not limited to a liquid crystal display device having a large area, but a liquid crystal display device having a reduced wiring and a smaller wiring interval with a higher definition display, or a wiring width. This is also effective for a liquid crystal display device in which the aperture ratio is improved by reducing the size.
- M o-W wiring thin film of the present invention, c further improved feasible narrowing of the wiring width and wiring interval, M o-WIE line thin film of the present invention is not limited to the wiring of the liquid crystal display device, It is also effective as wiring for plasma display devices, solid-state display devices, and flat-panel display devices using field emission cold cathodes.
- 3 ⁇ 4 thin film of the present invention further has an advantage that an oxide film formed on the surface has a small resistance. Therefore, it is possible to form a good contact with an upper metal spring or the like without performing an oxide film removing treatment. As a result, the manufacturing cost can be reduced. Therefore, unlike the conventional liquid crystal display device, the liquid crystal display device manufactured by using the M—W wiring thin film of the present invention has an oxide film formed on the surface of the gate electrode, the address wiring, and the Cs line. It is possible to configure in a state where it is set.
- the Mo—W target for forming a wiring according to the present invention enables a Mo—W wiring thin film having the above-described characteristics to be formed with good reproducibility by a thin film forming method such as a sputtering method.
- the M o-W material for forming a spring of the present invention is used.
- the Mo-W material for wiring formation is, when viewed as a single unit, 20 to 95% in atomic percent of tungsten, the remainder being molybdenum and unavoidable impurities. Has been adjusted to consist of The reason for defining the composition ratio of W, the preferable composition range, and the like are as described above.
- the composition of the Mo-WE spring thin film depends on the conditions for forming the I-fo spring thin film, for example, snow. Since it varies depending on various conditions such as the atmosphere at the time of sputtering, the applied voltage, and the like, it is not absolutely determined, but a good Mo—W wiring thin film can be obtained within the above W composition range.
- the Mo—W target for forming an Ef spring of the present invention can adopt various forms, and specific forms similar to the above-described Mo—W material ((A) and (A))
- the Mow alloy target described above depends on, for example, the powder particle size, molding conditions, sintering conditions, machining conditions, and melting method of each powder in the powder metallurgy method described in detail below.
- various density and texture can be obtained.
- the density and the structure of the target affect the characteristics of the obtained wiring thin film. Therefore, in order to prevent the generation of particles during sputtering and to improve the characteristics of the Mo—W wiring thin film, it is preferable that the Mo—W target be dense and have a fine metal structure. Particles cause disconnection or short circuit of wiring.
- the relative density is preferably 98 or more, and the average grain size of the crystal grains is preferably 200 zm or less.
- the sputtering rate varies depending on the crystal orientation of the crystal grains. Therefore, as the crystal grains are larger, the sputtered surface becomes more uneven, and a step occurs between the crystal grains. For this reason, sputtered particles are likely to adhere to steps and crystal planes and deposit.
- sputtered particles from an oblique direction are unstablely deposited at the center and at the end of the target. Such unstablely deposited sputtered particles (or the adhering film due to the sputtered particles) peel off or fall off during spattering, causing particles to be generated. Furthermore, at the large steps, a splash is generated due to abnormal discharge, and particles are generated.
- the average grain size of the crystal grains is preferably 200 / im or less, more preferably 100 / zin or less, and even more preferably 50 mm or less.
- the grain size of the crystal grains referred to in the present invention refers to the value of "(major axis + minor axis) IT of a crystal grain when a cross section of any polished surface in the sputter surface direction is observed at a magnification of 100 times.
- the average grain size of the crystal grains is an average value of the crystal grains present in the visual field when the polished surface is measured in 30 or more visual fields.
- the relative density of the Mo—W target is preferably 98 or more, more preferably 99% or more, and even more preferably 10 ( ⁇ ).
- the Vickers hardness is preferably Hv 400 or less, more preferably Hv 300 or less, and further preferably Hv 250 or less.
- the specific structure of the Mo—W target described above depends on the manufacturing method and manufacturing conditions, etc., depending on the manufacturing method, manufacturing conditions, etc., the structure of a uniform solid solution phase of Mo and W, and the structure of Mo and / or Various structures can be obtained, such as a structure in which W exists in a single phase and a structure in which a solid solution phase of Mo and W exists in a single phase of Mo and Z or W. Therefore, they can be selected in various ways depending on the desired characteristics. In particular, since it is strongly preferable that Mo and W are uniformly distributed in the target, it is preferable that the structure of the Mo—W mixture is a solid solution phase of uniform Mo and W.
- M o—W target for forming a hot spring of the present invention More specific forms of the M o—W target for forming a hot spring of the present invention include, for example,
- the target (a) and the target (b) are specific examples of the mode (A) described above.
- the target (c) is a specific example of the mode (B) described above.
- An example of a method for manufacturing the target (a) will be described below. First, Mo powder and W powder are mixed in a ball mill to produce a uniform mixed powder. At this time, the amount of impurities mixed into the target is reduced by setting the inner wall of the ball mill and the material of the ball to be used to Mo or W by using a force that can apply nylon or ceramics to the material of the ball. be able to.
- Hot pressing in vacuum can be used for sintering.
- a combination of isostatic pressing such as cold isostatic pressing (CIP) and sintering in a reducing atmosphere such as a hydrogen atmosphere is applied. May be. Further, it is effective to subject the sintered body obtained by these methods to hot working such as HIP processing, forging and rolling to further densify the target material. Hot pressing is preferably performed under the conditions of a heating temperature of 1973K or more and a surface pressure of 20MPa or more.
- sintering after pressure molding is preferably performed at a temperature of 1973K or more, more preferably 2073K or more.
- Preferred conditions for the HIP treatment are a heating temperature of 1773 K or more and a pressure of 150 MPa or more, and more preferably the heating temperature.
- the evening get material obtained by the powder metallurgy method described above is subjected to processing such as grinding to obtain a M-W target having a predetermined shape.
- a sintered body composed of Mo, W and unavoidable impurities is produced by a powder metallurgy method, and then an ingot is produced by a melting method such as electron beam melting. After that, if necessary, hot working such as forging or rolling is performed, and then mechanical processing such as grinding is performed to obtain a M-W target having a predetermined shape.
- the Mo-W target for forming ⁇ of the present invention satisfies the above-mentioned conditions regarding the density and the structure in order to prevent generation of particles during sputtering. Therefore, it is particularly preferable to apply a manufacturing method that combines powder metallurgy and hot working. By subjecting the sintered body by powder metallurgy to hot working, it is possible to maintain the fine crystal grain size and Can be changed. For example, a MO—W target having a relative density of 98 or more and an average grain size of 200 ⁇ m or less can be obtained. Since the target material obtained by the melting method tends to have a large crystal grain size, there is a possibility that the mechanical strength is reduced or cracks are generated during hot working.
- the sintered body subjected to the hot working described above preferably has a relative density of 90% or more. If the relative density of the sintered body is too low, the target material may not be finally densified even if hot working is performed.
- the sintered body to be subjected to hot working is preferably a sintered body of a press-formed body such as CIP. According to the hot press, Mo and W may react with the carbon mold at a high temperature at which densification is possible.
- the preferred method of manufacturing the solid-forming Mo—W target of the present invention includes a step of molding (particularly, CIP or the like) a mixed powder adjusted to a predetermined composition ratio (W: 20 to 95 atD). It can be said that this is a manufacturing method that includes a step of sintering the sintered body in a reducing atmosphere such as a hydrogen atmosphere, and a step of hot working the sintered body. In order to remove the residual processing strain, it is preferable to perform a strain relief heat treatment.
- the specific conditions of the above-mentioned evening gate manufacturing method are as follows.
- the processing temperature during sintering in a reducing atmosphere such as a hydrogen atmosphere
- the processing temperature during hot working and the processing temperature
- the rate and subsequent heat treatment temperature are important factors.
- the sintering temperature in a reducing atmosphere such as a hydrogen atmosphere affects the density of the target material. Therefore, it is preferable to set the sintering temperature to 2173K or more. If the sintering temperature is lower than 2173K, it will be difficult to increase the relative density to 98% or more even after hot rolling.
- An appropriate sintering time is about 5 to 30 hours, because the power increases the density as the time increases and the productivity decreases as the time increases.
- a more preferred treatment temperature is 2272K or higher, and further more preferably 2473K 'or higher. Further, a more preferable sintering time is about 10 to 25 hours.
- the processing temperature during hot working is an important factor for preventing cracking during working and for producing a stable product.
- pure tungsten tends to become brittle rapidly below 1473K, and the processing temperature must be raised as the W content increases. Therefore,
- the treatment temperature is preferably 1673K or higher, more preferably 1873K or higher.
- the treatment time is preferably about 2 to 8 hours in consideration of the heat uniformity of the sintered body.
- the rolling ratio (3 ⁇ 40) in the present invention is the ratio of the thickness of the sintered body before rolling to the thickness after rolling (working), and ((thickness of the sintered body before rolling minus one rolling ( Thickness after processing) Thickness of sintered body before Z rolling) X100
- the strain relief heat treatment performed after hot rolling is preferably performed at a temperature in the range of 1473 to 1923K. If the heat treatment temperature is lower than 1473K, the residual strain may not be sufficiently removed. On the other hand, if the heat treatment temperature is higher than 1923K, pores may be generated in the material, which may cause generation of particles.
- the strain relief heat treatment temperature is preferably set in the range of 1673 to 1823K.
- the above-mentioned targets (a) and (b) are integrally manufactured in order to prevent generation of particles when forming a thin film.
- a plurality of targets having the same composition are used. They may be used in combination. In this case, the plurality of targets are fixed by brazing to a backing plate or the like.
- the targets in order to prevent generation of particles particularly from an edge portion, it is preferable that the targets be joined by diffusion. Diffusion bonding methods include direct bonding, bonding with Mo and / or Z or W at the joint, and bonding with a Mo and / or W plating layer at the joint. Various methods are adopted.
- Mo target pieces and W target pieces are manufactured by a melting method such as a powder metallurgy method or an electron beam melting method.
- the obtained ingot is processed as necessary.
- an M-W target with a predetermined shape is obtained.
- the composition ratio of Mo and W is adjusted by adjusting the area ratio of the two so that a predetermined composition ratio is obtained.
- the characteristics of the obtained thin film are influenced by the structure of each target piece and the like. For this reason, the powder particle size of each powder in the powder metallurgy method, molding conditions, sintering conditions, machining conditions, melting and manufacturing conditions in the melting method, and the like are appropriately selected. Thus, various manufacturing conditions By being changed, various structures, crystal structures, and the like of the obtained target can be obtained.
- the structure and density of each target piece are preferably set to values according to the above-mentioned alloy target.
- This diffusion bonding method includes direct bonding
- Fig. 1 shows the relationship between the resistivity and the W content of the M0-W alloy.
- Fig. 2 shows the relationship between the etching rate and the W content for each etchant of the M0-W alloy.
- Fig. 4 shows the relationship between the stress of the Mo-W alloy and the W content.
- Fig. 4 shows the relationship between the W content and the W content when a Mo-W alloy film was obtained by sputtering using an M0-W alloy.
- Fig. 5 shows the relationship with the sputter rate
- Fig. 5 is a cross-sectional view of a TFT and a storage capacitor used in a liquid crystal display
- Fig. 6 is a cross-sectional view of a TFT and a storage capacitor used in another liquid crystal display.
- FIG. 8 is a micrograph showing an enlarged metal structure of an M0—W target formed in one embodiment of the present invention
- 10 is a micrograph showing an enlarged view of the metal structure of the Mo—W target formed in still another embodiment of the present invention
- FIG. 11 is an enlarged view of the metal structure of the Mo—W target formed as a reference example. There are micrographs shown. BEST MODE FOR CARRYING OUT THE INVENTION
- the mixture After blending Mo powder having an average particle size and W powder having an average particle size of lO m so as to have various atomic percentages, the mixture is charged into a ball mill having an inner wall coated with Mo, and a nylon bobbin is provided. The mixture was mixed for 48 hours to obtain a plurality of uniform mixed powders. After filling each of the obtained mixed powders into a carbon mold, sintering was performed by vacuum hot pressing under the conditions of a heating temperature of 2073K, a heating time of 5 hours, and a surface pressure of 30 MPa, and a sintered body having a density of 97% was obtained. I got each. Thereafter, each of the obtained sintered bodies was subjected to cutting and grinding machining to obtain Mo—W targets having various compositions with a diameter of 250 thighs and a thickness of 8 thighs.
- Mo—W targets were bonded to an oxygen-free copper backing plate with an In-based brazing material, and then attached to a sputtering device.
- a sputtering apparatus the distance between the glass substrate, which is the film-forming substrate, and the target is set to 70, and the glass substrate is heated. Evening rings were performed to form Mo—W alloy films, respectively.
- FIG. 5 is a cross-sectional view showing an example of a TFT (switching element) and a storage capacitor portion used in the liquid crystal display device. The configuration and process of the TFT and the storage capacity section will be described.
- the gate electrode (control electrode) 2, the address line, and the Cs line 9 are simultaneously formed on the glass substrate 11 by using the above-mentioned Mo—W substrate of the present invention to 300 nm. Then, after the 350nm form an oxide film 3 by plasma CVD, aS i 300 nm of the active layer 4, the n T aS i layer 5a, 5 b and communicating ⁇ and so 50 nm, the islands of aS i Form. Next, the pixel electrode 8 is formed by sputtering ITO to a thickness of 120 nm. Next, a contact hole is formed by etching S i 0 in the contact portion with dilute HF.
- a predetermined spring metal such as A1 is sputtered, and a source electrode (first electrode) 6a, a drain electrode (second electrode) 6b, and a de-wiring wire are simultaneously formed by etching. At this time, a surface oxidation treatment was required before the sputtering of A1 etc.
- the Mo—W of the present invention formed using the Mo—W evening get of the present invention. Since the i3 ⁇ 43 ⁇ 4 thin film has a low resistivity, an address wiring formed using the thin film exhibits a low resistance. As a result, the gate pulse was not delayed due to the wiring resistance, and a gate pulse having no delay in a predetermined switching element was obtained.
- the Mo—W12 wire thin film of the present invention can be tapered, the step coverage of the interlayer insulating film formed on a paddle formed by using this alloy film is improved, and the withstand voltage is improved. It was possible to secure high. Therefore, for example, even when the display area is increased, a highly reliable liquid crystal display device can be realized.
- Table 1 shows the relationship between the composition ratio of the Mo—W target and the taper angle.
- the taper angle was measured by observing the cross section of the thin film by SEM and measuring the angle with the glass substrate. As is evident from Table 1, the taper angle increases as the ratio of W increases, indicating that the taper processing is good within the composition range of the present invention.
- the etching rate of the Mo—W alloy film is 8 nm / min or less for the ITO etchant, and 3 to 40 nm / min or less for the A1 etchant.
- BHF which is an etchant for insulating film, is completely etchant was not In particular, it was found that no etching was performed when W was 50 at% or more. Therefore, even when a pinhole force is generated in the interlayer insulating film, the wiring under the interlayer insulating film such as the gate electrode and the data line is not corroded by the above-mentioned respective etchants. Therefore, there is an advantage that the degree of freedom of the structural design Z process design above the interlayer insulating film can be increased.
- Figure 3 shows the results of measuring the stress (dyn / cm 2 ) of the Mo-W alloys of the various compositions described above. As is clear from FIG. 3, since the stress largely changes depending on the composition ratio, it is possible to reduce the stress by adjusting the composition ratio.
- Figure 4 shows the measurement results of the sputter rate (nm / min) when an M0-W alloy film was obtained by sputtering using a M0-W target.
- This sputter rate is measured by the following method. First, the Mo-W after sputtering was applied to the film thickness measurement points from the four corners of the glass substrate toward the center of the substrate, and from the center of the four sides to the opposing sides. Mark with an oil-based ink for the purpose of reducing the adhesion of the alloy film. Then, after forming an M-W alloy film by sputtering, an adhesive tape is applied to the area marked with oil-based ink, and the tape is peeled off. Is peeled off.
- the sputter rate is good when the ratio of W is low.
- the ratio of W in the range of 25 to 45 at3 ⁇ 4i.
- the above-described embodiment is an example of the present invention, and the thickness of each layer and the film forming method can be appropriately changed and implemented. Even in such a case, the same effect as in the present embodiment can be obtained. Further, it is also possible to use a TFT having another structure, for example, a TFT having a structure in which an insulating film stopper is provided on a channel.
- the storage capacitor portion may have a structure formed on a wiring in the same layer as the gate electrode and a wiring in the same layer as the data wiring.
- the mixture After blending Mo powder with an average particle size of 10 m and W powder with an average particle size of 10 zm so that the atoms of W are in the range of 20 to 95%, the mixture is put into a ball mill whose inner wall is covered with M0. Then, the mixture was mixed using a nylon ball for 30 hours to obtain a uniform mixed powder. The obtained mixed powder was filled in a mold and subjected to wet-CIP processing under a pressure of 200 MPa. The obtained molded body was sintered in a hydrogen atmosphere under the conditions of 2073 KX for 10 hours to obtain a sintered body having a density of 90 °.
- the obtained sintered body was subjected to cutting and grinding machining to obtain Mo—W targets having various compositions with a diameter of 250 mm and a thickness of 8 mm.
- the Mo-W target was bonded to an oxygen-free copper packing plate with an In-based brazing material and attached to a sputtering apparatus.
- FIG. 6 is a cross-sectional view of a TFT and a storage capacitor used in a liquid crystal display device different from the first embodiment. The configuration and process of the TFT and the storage capacitor will be described.
- a predetermined wiring metal such as Mo—Ta
- a gate electrode 12 an address line, and a Cs line 19 are simultaneously formed.
- the oxide film or a nitride film 1 3 was 350nm formed by bra Zuma CVD, sequentially deposited and so aS i layer 14 300, n T aS i layer 1 5 a, 1 5 b the 50nm , A- S i to form islands.
- the surface oxide film is removed.
- the source electrode 16a, the drain electrode 16b, and the data distribution H are simultaneously formed by wet etching.
- an oxide film 17 is formed to a thickness of 300 nm, etching using an HF solution (for example, an etching rate of about lOnm / min) or dry etching using a gas such as CF (for example, an etching rate of about 3 to: L0 nm / min) )
- etching using an HF solution for example, an etching rate of about lOnm / min
- a gas such as CF for example, an etching rate of about 3 to: L0 nm / min
- the M 0 -W 12 ⁇ thin film formed by using the above-described M 0 -W getter of the present invention has excellent chemical resistance.
- the data wiring made of M0-WE spring thin film with excellent chemical resistance is used for etching of M0 film and W film.
- the drain electrode 16b has excellent chemical resistance, it is possible to form a contact hole with HF on the drain electrode 16b, and the pixel electrode is processed with a mixed solution of chlorine and nitric acid. It was also possible. Further, it has been found that when a wiring is formed using the Mo—W wiring thin film of the present invention, unlike A 1, hillocks do not occur, and no reaction with ITO occurs, so that no barrier metal is required.
- the Mo-WE wire thin film of the present invention basically has the advantage of low resistance, and further has a large change in stress depending on the stringent ratio of the M0-W alloy. Therefore, it is possible to reduce the stress.
- TFT having another structure for example, TFT having a structure in which a stopper of an insulating film is provided on a channel, or the like can be used.
- the storage capacitor portion may have a structure formed on a wiring in the same layer as the gate electrode and a wiring in the same layer as the data wiring.
- the ball mill After mixing Mo powder with an average particle diameter of 10 m and W powder with an average particle diameter of 10 / im so that the W atom is in the range of 20 to 95%, the ball mill whose inner wall is coated with Mo And mixed using a nylon ball for 24 hours to obtain a uniform mixed powder.
- the obtained mixed powder was filled in a molding die, and subjected to wet-CIP treatment molding under a pressure of 200 MPa.
- the obtained compact was sintered in a hydrogen atmosphere at 2073 K for 8 hours to obtain a sintered body with a density of 90%. Further, this sintered body was subjected to HIP treatment under the conditions of 2073 ⁇ , 4 hours, and 180 MPa to obtain a sintered body having a density of 983 ⁇ 4. Thereafter, the obtained sintered body was subjected to cutting and grinding machining to obtain a target piece having a length of 180, a width of 180 and a thickness of 6 orchids.
- FIG. 7 is a cross-sectional view of a TFT and a storage capacitor used in a liquid crystal display device different from those of the first and second embodiments.
- a 300 nm snowflake was formed on a glass substrate 21 using the above-described Mow target of the present invention.
- a gate electrode 22, an address line, and a Cs line 29a are simultaneously formed.
- the source electrode 26a, the drain electrode 26b, and the data IS spring are simultaneously formed by jet etching. .
- the liquid crystal display device of the third embodiment uses a TFT having a structure in which an insulating film stopper is provided on a channel, instead of a back channel cut type TFT for etching a channel portion applied in the second embodiment.
- the storage capacitor portion is formed of the same layer as the gate electrode and the same layer as the data wiring.
- sputtering is performed on the glass substrate 21 by using the Mo—W target of the present invention, and the gate electrode 22, the address line, and the Cs line 29 a are simultaneously formed.
- an inter-layer insulating film 23, an a-Si layer 24, a channel protective layer 30, and an n + a-Si layer 25a, 25b are successively formed.
- sputtering is performed using a Mo—W target to simultaneously form a source electrode 26a, a drain electrode 26b, a data Ef spring, and a Cs line 29b.
- a contact hole is formed on the drain electrode 26 b to form the pixel electrode 28.
- the present invention is not limited to the above-described embodiment, and the semiconductor is not limited to a-Si, and may be formed using -Si, CdSe, or the like.
- the insulating film on the data wiring is not limited to the oxide film, but may be a nitride film.
- the wiring thin film of the present invention instead of adopting a one-layer structure as in the above-described embodiment, it may be formed as a laminated film of two or more layers made of a Mo-W alloy having different compositions. Oxidation resistance may be improved by laminating Ta, TaN or the like on the wiring thin film of the present invention. Furthermore, the present invention The resistance may be lowered by stacking Al, Cu, or the like below the film.
- a mixed powder prepared by mixing a Mo powder having an average particle size of 4.5 ⁇ m and a W powder having an average particle size of 3.6 / zm at a predetermined ratio is filled into a molding rubber mold, and then subjected to a pressure of 200 MPa. Pressure was applied by CIP to produce a compact. Next, the obtained compact was sintered in a hydrogen atmosphere under various conditions. The sintering conditions are as shown in Tables 2 and 3. Further, these sintered bodies were heated in a hydrogen atmosphere to hot-roll the cloth. The rolling conditions are as shown in Tables 2 and 3.
- a J 1 L T fc bi, recur; is no ⁇ ⁇ , no no no no 5
- each M o-W target according to Example 4 both have a relative density of 98% or more, and c Pitsuka Ichisu hardness was Hv 350 or less, the It has been found that by forming a film using such a Mo—W target, it is possible to greatly reduce the number of generated particles.
- FIG. 8 is an optical micrograph (magnification: 100 ⁇ ) showing an enlarged view of the metal structure of the sample Noll Mo—W target in Example 4.
- FIG. 8 is an enlarged view of the metal structure of the sample Nol5 Mo—W target.
- the optical micrograph (100 ⁇ magnification) is shown in FIG. 9, and the optical micrograph (100 ⁇ magnification) of the metal structure of the Mo—W target of sample No. 31 is shown in FIG.
- an optical microscope photograph magnification: 100 times showing the metal structure of the Mo—W target of sample No. 47 in the reference example is shown in FIG. 11.
- FIG. 8 shows the metal structure from which the strain has been removed.
- FIG. 11 shows a state where the strain has not been sufficiently removed because the temperature of the strain removing heat treatment is low.
- FIGS. 9 and 10 show a state in which the strain has been removed and the crystal has been recrystallized.
- Fig. 8 shows the state in which the distortion has been removed. The force is not as perfect as in Fig. 9 and Fig. 10, and there is a slight distortion, which may cause warpage during use and peel off from the backing plate. . Therefore, it is preferable to recrystallize.
- the temperature of the strain relief heat treatment is too high, some pores are generated in the crystal. Therefore, it is preferable to set a temperature at which no pores are generated.
- liquid crystal display devices shown in the above-described Examples 1, 2 and 3 were manufactured using the Mo—W light source obtained in Example 4 above, and similar good results were obtained. Was done. Furthermore, since the Mo—W wiring thin film formed using the Mo—W target according to Example 4 has a significantly small number of particles, it is possible to further improve the electrical characteristics of the address wiring and the data source. It was possible.
- the present invention is not limited to the configurations and the manufacturing methods of the above-described embodiments, and is not limited to the M0-W material of the present invention.
- the present invention is applicable to all devices using a thin film or using the M0-W wiring thin film of the present invention.
- the present invention is also effective for wiring of display devices, flat display devices using field emission cold cathodes, and the like.
- the Mw material for forming a wiring according to the present invention has low resistance, can be tapered, and has excellent etch resistance. It is very effective as a material for forming wiring and data. Since the Mo—W wiring thin film of the present invention uses the Mo—W material (Mo—W alloy) as described above, it greatly contributes to the improvement of the operating characteristics and reliability of the liquid crystal display device and the like. I do. Further, the Mo—W target for wiring formation of the present invention enables the above-described Mo—W wiring thin film to be formed favorably and with good reproducibility.
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Description
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Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT95902950T ATE216436T1 (de) | 1993-12-14 | 1994-12-14 | Molybdän-wolfram-material zum verdrahten, molybdän-wolfram-target zum verdrahten, verfahren zu deren herstellung und dünne molybdän-wolfram verdrahtung |
EP95902950A EP0735152B1 (en) | 1993-12-14 | 1994-12-14 | Molybdenum-tungsten material for wiring, molybdenum-tungsten target for wiring, process for producing the same, and molybdenum-tungsten wiring thin film |
US08/663,251 US5913100A (en) | 1993-12-14 | 1994-12-14 | Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film |
KR1019960703145A KR100210525B1 (ko) | 1993-12-14 | 1994-12-14 | 배선형성용 몰리브덴-텅스텐재, 배선형성용 몰리브덴-텅스텐 타깃과 그 제조방법 및 몰리브덴-텅스텐 배선박막 |
DE69430439T DE69430439T2 (de) | 1993-12-14 | 1994-12-14 | Molybdän-wolfram-material zum verdrahten, molybdän-wolfram-target zum verdrahten, verfahren zu deren herstellung und dünne molybdän-wolfram verdrahtung |
JP51666095A JP3445276B2 (ja) | 1993-12-14 | 1994-12-14 | 配線形成用Mo−WターゲットとMo−W配線薄膜、およびそれを用いた液晶表示装置 |
US09/165,743 US7153589B1 (en) | 1993-12-14 | 1998-10-06 | Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31293693 | 1993-12-14 | ||
JP5/312936 | 1993-12-14 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08663251 A-371-Of-International | 1994-12-14 | ||
US09/165,743 Division US7153589B1 (en) | 1993-12-14 | 1998-10-06 | Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1995016797A1 true WO1995016797A1 (en) | 1995-06-22 |
Family
ID=18035262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1994/002095 WO1995016797A1 (en) | 1993-12-14 | 1994-12-14 | Molybdenum-tungsten material for wiring, molybdenum-tungsten target for wiring, process for producing the same, and molybdenum-tungsten wiring thin film |
Country Status (8)
Country | Link |
---|---|
US (3) | US5913100A (ja) |
EP (2) | EP0735152B1 (ja) |
JP (1) | JP3445276B2 (ja) |
KR (1) | KR100210525B1 (ja) |
AT (1) | ATE216436T1 (ja) |
DE (1) | DE69430439T2 (ja) |
TW (1) | TW360926B (ja) |
WO (1) | WO1995016797A1 (ja) |
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WO2001023635A1 (fr) * | 1999-09-28 | 2001-04-05 | Nikko Materials Company, Limited | Cible en tungstene destine a la pulverisation et son procede de preparation |
JP2001295035A (ja) * | 2000-04-11 | 2001-10-26 | Toshiba Corp | スパッタリングターゲットおよびその製造方法 |
JP2002356733A (ja) * | 2001-05-31 | 2002-12-13 | Toshiba Corp | 配線形成用材料、配線形成用スパッタリングターゲット、配線薄膜及び電子部品 |
US6614083B1 (en) | 1999-03-17 | 2003-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material and a semiconductor device having wiring using the material, and the manufacturing method |
JP2004217990A (ja) * | 2003-01-14 | 2004-08-05 | Toshiba Corp | スパッタリングターゲットとその製造方法 |
KR100471773B1 (ko) * | 1997-09-19 | 2005-07-07 | 삼성전자주식회사 | 몰리브덴또는몰리브덴합금을이용한배선의제조방법및이를이용한박막트랜지스터의제조방법 |
US6946681B2 (en) | 1996-11-21 | 2005-09-20 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
KR100508036B1 (ko) * | 1997-02-26 | 2005-11-21 | 삼성전자주식회사 | 몰리브덴또는몰리브덴합금을이용한반도체장치의제조방법 |
JP2006157052A (ja) * | 1999-04-12 | 2006-06-15 | Semiconductor Energy Lab Co Ltd | トランジスタおよびその作製方法、並びに半導体装置 |
JP2007092089A (ja) * | 2005-09-27 | 2007-04-12 | Japan New Metals Co Ltd | スパッタリングターゲット用原料粉末として用いられる高純度モリブデン−タングステン合金粉末の製造方法 |
WO2008084863A1 (ja) * | 2007-01-12 | 2008-07-17 | Nippon Steel Materials Co., Ltd. | Mo系スパッタリングターゲット板,および,その製造方法 |
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WO2009119804A1 (ja) * | 2008-03-28 | 2009-10-01 | 日立金属株式会社 | 電子部品用薄膜配線および薄膜配線形成用スパッタリングターゲット材 |
US7855380B2 (en) | 1999-04-12 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
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JP2016180179A (ja) * | 2015-03-23 | 2016-10-13 | 三菱マテリアル株式会社 | 多結晶タングステン及びタングステン合金焼結体並びにその製造方法 |
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WO2019107816A1 (ko) | 2017-11-29 | 2019-06-06 | 엔에이티엠 주식회사 | 텅스텐-몰리브덴 합금 제조방법 |
JP2020047702A (ja) * | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 半導体装置およびその製造方法 |
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- 1994-12-14 EP EP99201616A patent/EP0947593A3/en not_active Withdrawn
- 1994-12-14 DE DE69430439T patent/DE69430439T2/de not_active Expired - Lifetime
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Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
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US6946681B2 (en) | 1996-11-21 | 2005-09-20 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
KR100508036B1 (ko) * | 1997-02-26 | 2005-11-21 | 삼성전자주식회사 | 몰리브덴또는몰리브덴합금을이용한반도체장치의제조방법 |
KR100471773B1 (ko) * | 1997-09-19 | 2005-07-07 | 삼성전자주식회사 | 몰리브덴또는몰리브덴합금을이용한배선의제조방법및이를이용한박막트랜지스터의제조방법 |
US7663238B2 (en) | 1999-03-17 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material and a semiconductor device having a wiring using the material, and the manufacturing method thereof |
US7411259B2 (en) | 1999-03-17 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material and a semiconductor device having a wiring using the material, and the manufacturing method thereof |
US7189604B2 (en) | 1999-03-17 | 2007-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material and a semiconductor device having a wiring using the material, and the manufacturing method thereof |
US6614083B1 (en) | 1999-03-17 | 2003-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material and a semiconductor device having wiring using the material, and the manufacturing method |
US8071981B2 (en) | 1999-04-12 | 2011-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
JP2006157052A (ja) * | 1999-04-12 | 2006-06-15 | Semiconductor Energy Lab Co Ltd | トランジスタおよびその作製方法、並びに半導体装置 |
US8866143B2 (en) | 1999-04-12 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US8129721B2 (en) | 1999-04-12 | 2012-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US7855380B2 (en) | 1999-04-12 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
JP4527069B2 (ja) * | 1999-04-12 | 2010-08-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
US6582535B1 (en) | 1999-09-28 | 2003-06-24 | Nikko Materials Company, Limited | Tungsten target for sputtering and method for preparing thereof |
WO2001023635A1 (fr) * | 1999-09-28 | 2001-04-05 | Nikko Materials Company, Limited | Cible en tungstene destine a la pulverisation et son procede de preparation |
JP2001295035A (ja) * | 2000-04-11 | 2001-10-26 | Toshiba Corp | スパッタリングターゲットおよびその製造方法 |
JP2002356733A (ja) * | 2001-05-31 | 2002-12-13 | Toshiba Corp | 配線形成用材料、配線形成用スパッタリングターゲット、配線薄膜及び電子部品 |
JP4574949B2 (ja) * | 2003-01-14 | 2010-11-04 | 株式会社東芝 | スパッタリングターゲットとその製造方法 |
JP2004217990A (ja) * | 2003-01-14 | 2004-08-05 | Toshiba Corp | スパッタリングターゲットとその製造方法 |
US8409498B2 (en) | 2004-03-31 | 2013-04-02 | Hitachi Metals, Ltd. | Method of producing a sputter target material |
JP4492877B2 (ja) * | 2005-09-27 | 2010-06-30 | 日本新金属株式会社 | スパッタリングターゲット用原料粉末として用いられる高純度モリブデン−タングステン合金粉末の製造方法 |
JP2007092089A (ja) * | 2005-09-27 | 2007-04-12 | Japan New Metals Co Ltd | スパッタリングターゲット用原料粉末として用いられる高純度モリブデン−タングステン合金粉末の製造方法 |
WO2008084863A1 (ja) * | 2007-01-12 | 2008-07-17 | Nippon Steel Materials Co., Ltd. | Mo系スパッタリングターゲット板,および,その製造方法 |
JP5426173B2 (ja) * | 2007-01-12 | 2014-02-26 | 新日鉄住金マテリアルズ株式会社 | Mo系スパッタリングターゲット板,および,その製造方法 |
JP2008260969A (ja) * | 2007-04-10 | 2008-10-30 | Hitachi Metals Ltd | Fe−Co系合金スパッタリングターゲット材およびFe−Co系合金スパッタリングターゲット材の製造方法 |
WO2009119804A1 (ja) * | 2008-03-28 | 2009-10-01 | 日立金属株式会社 | 電子部品用薄膜配線および薄膜配線形成用スパッタリングターゲット材 |
JP5327651B2 (ja) * | 2008-03-28 | 2013-10-30 | 日立金属株式会社 | 電子部品用薄膜配線および薄膜配線形成用スパッタリングターゲット材 |
JP2016180179A (ja) * | 2015-03-23 | 2016-10-13 | 三菱マテリアル株式会社 | 多結晶タングステン及びタングステン合金焼結体並びにその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100210525B1 (ko) | 1999-07-15 |
ATE216436T1 (de) | 2002-05-15 |
US7153589B1 (en) | 2006-12-26 |
KR960706570A (ko) | 1996-12-09 |
EP0735152A4 (en) | 1997-02-26 |
DE69430439D1 (de) | 2002-05-23 |
DE69430439T2 (de) | 2003-02-06 |
EP0947593A2 (en) | 1999-10-06 |
TW360926B (en) | 1999-06-11 |
US5913100A (en) | 1999-06-15 |
JP3445276B2 (ja) | 2003-09-08 |
EP0735152B1 (en) | 2002-04-17 |
US6200694B1 (en) | 2001-03-13 |
EP0735152A1 (en) | 1996-10-02 |
EP0947593A3 (en) | 1999-12-15 |
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