ATE216436T1 - Molybdän-wolfram-material zum verdrahten, molybdän-wolfram-target zum verdrahten, verfahren zu deren herstellung und dünne molybdän-wolfram verdrahtung - Google Patents

Molybdän-wolfram-material zum verdrahten, molybdän-wolfram-target zum verdrahten, verfahren zu deren herstellung und dünne molybdän-wolfram verdrahtung

Info

Publication number
ATE216436T1
ATE216436T1 AT95902950T AT95902950T ATE216436T1 AT E216436 T1 ATE216436 T1 AT E216436T1 AT 95902950 T AT95902950 T AT 95902950T AT 95902950 T AT95902950 T AT 95902950T AT E216436 T1 ATE216436 T1 AT E216436T1
Authority
AT
Austria
Prior art keywords
wiring
molybdenum tungsten
wirings
molybdenum
tungsten
Prior art date
Application number
AT95902950T
Other languages
English (en)
Inventor
Yasuo Kohsaka
Yoshiharu Fukasawa
Yoshiko Tsuji
Mitsushi Ikeda
Michio Sato
Toshihiro Maki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Application granted granted Critical
Publication of ATE216436T1 publication Critical patent/ATE216436T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/09—Mixtures of metallic powders
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
    • Y10T428/1284—W-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core
    • Y10T428/294—Coated or with bond, impregnation or core including metal or compound thereof [excluding glass, ceramic and asbestos]
    • Y10T428/2951—Metal with weld modifying or stabilizing coating [e.g., flux, slag, producer, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
AT95902950T 1993-12-14 1994-12-14 Molybdän-wolfram-material zum verdrahten, molybdän-wolfram-target zum verdrahten, verfahren zu deren herstellung und dünne molybdän-wolfram verdrahtung ATE216436T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31293693 1993-12-14
PCT/JP1994/002095 WO1995016797A1 (en) 1993-12-14 1994-12-14 Molybdenum-tungsten material for wiring, molybdenum-tungsten target for wiring, process for producing the same, and molybdenum-tungsten wiring thin film

Publications (1)

Publication Number Publication Date
ATE216436T1 true ATE216436T1 (de) 2002-05-15

Family

ID=18035262

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95902950T ATE216436T1 (de) 1993-12-14 1994-12-14 Molybdän-wolfram-material zum verdrahten, molybdän-wolfram-target zum verdrahten, verfahren zu deren herstellung und dünne molybdän-wolfram verdrahtung

Country Status (8)

Country Link
US (3) US5913100A (de)
EP (2) EP0947593A3 (de)
JP (1) JP3445276B2 (de)
KR (1) KR100210525B1 (de)
AT (1) ATE216436T1 (de)
DE (1) DE69430439T2 (de)
TW (1) TW360926B (de)
WO (1) WO1995016797A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445004B1 (en) 1998-02-26 2002-09-03 Samsung Electronics Co., Ltd. Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
KR100471773B1 (ko) * 1997-09-19 2005-07-07 삼성전자주식회사 몰리브덴또는몰리브덴합금을이용한배선의제조방법및이를이용한박막트랜지스터의제조방법
KR100508036B1 (ko) * 1997-02-26 2005-11-21 삼성전자주식회사 몰리브덴또는몰리브덴합금을이용한반도체장치의제조방법
JP2000311611A (ja) * 1999-02-25 2000-11-07 Canon Inc 画像形成装置の製造方法および、該製造方法により製造された画像形成装置
US6614083B1 (en) 1999-03-17 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Wiring material and a semiconductor device having wiring using the material, and the manufacturing method
JP4527069B2 (ja) * 1999-04-12 2010-08-18 株式会社半導体エネルギー研究所 表示装置
TW444257B (en) 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
US7245018B1 (en) 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US6661096B1 (en) * 1999-06-29 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
JP4627843B2 (ja) * 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
JP3721014B2 (ja) * 1999-09-28 2005-11-30 株式会社日鉱マテリアルズ スッパタリング用タングステンターゲットの製造方法
JP2001295035A (ja) * 2000-04-11 2001-10-26 Toshiba Corp スパッタリングターゲットおよびその製造方法
US7718117B2 (en) * 2000-09-07 2010-05-18 Kabushiki Kaisha Toshiba Tungsten sputtering target and method of manufacturing the target
JP4905618B2 (ja) * 2001-05-31 2012-03-28 株式会社東芝 配線形成用材料、配線形成用スパッタリングターゲット、配線薄膜及び電子部品
JP4574949B2 (ja) * 2003-01-14 2010-11-04 株式会社東芝 スパッタリングターゲットとその製造方法
JP2004356616A (ja) * 2003-05-28 2004-12-16 Samsung Electronics Co Ltd 配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法
JP4110533B2 (ja) * 2004-02-27 2008-07-02 日立金属株式会社 Ｍｏ系ターゲット材の製造方法
US20050230244A1 (en) 2004-03-31 2005-10-20 Hitachi Metals, Ltd Sputter target material and method of producing the same
US20070243095A1 (en) * 2004-06-15 2007-10-18 Tosoh Smd, Inc. High Purity Target Manufacturing Methods
JP4492877B2 (ja) * 2005-09-27 2010-06-30 日本新金属株式会社 スパッタリングターゲット用原料粉末として用いられる高純度モリブデン−タングステン合金粉末の製造方法
AT8697U1 (de) 2005-10-14 2006-11-15 Plansee Se Rohrtarget
DE102005050424B4 (de) * 2005-10-19 2009-10-22 W.C. Heraeus Gmbh Sputtertarget aus mehrkomponentigen Legierungen
US20080170959A1 (en) * 2007-01-11 2008-07-17 Heraeus Incorporated Full density Co-W magnetic sputter targets
CN101611165B (zh) * 2007-01-12 2012-03-21 新日铁高新材料 Mo系溅射靶板及其制造方法
JP4919162B2 (ja) * 2007-04-10 2012-04-18 日立金属株式会社 Ｆｅ−Ｃｏ系合金スパッタリングターゲット材およびＦｅ−Ｃｏ系合金スパッタリングターゲット材の製造方法
US8016705B2 (en) 2007-04-19 2011-09-13 Shimano Inc. Bicycle component positioning device
AT10578U1 (de) * 2007-12-18 2009-06-15 Plansee Metall Gmbh Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht
WO2009119804A1 (ja) * 2008-03-28 2009-10-01 日立金属株式会社 電子部品用薄膜配線および薄膜配線形成用スパッタリングターゲット材
KR20170016024A (ko) 2011-05-10 2017-02-10 에이치. 씨. 스타아크 아이앤씨 멀티-블록 스퍼터링 타겟 및 이에 관한 제조방법 및 물품
JP6677875B2 (ja) * 2015-03-23 2020-04-08 三菱マテリアル株式会社 多結晶タングステン及びタングステン合金焼結体並びにその製造方法
KR101995377B1 (ko) 2017-11-29 2019-07-02 엔에이티엠 주식회사 텅스텐-몰리브덴 합금 제조방법
JP2020047702A (ja) * 2018-09-18 2020-03-26 キオクシア株式会社 半導体装置およびその製造方法
KR20230067339A (ko) * 2021-11-09 2023-05-16 삼성전자주식회사 집적회로 소자
CN115233175A (zh) * 2022-08-08 2022-10-25 新加坡先进薄膜材料私人有限公司 一种钌旋转溅射靶材的制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778654A (en) * 1972-11-02 1973-12-11 Gen Electric Molybdenum alloy target for mammographic usage in x-ray tubes
JPS6011479B2 (ja) * 1977-09-20 1985-03-26 富士通株式会社 セラミツク多層回路基板の製造方法
JPS587864A (ja) * 1981-07-06 1983-01-17 Hitachi Ltd 半導体装置及びその製造方法
JPS6011479A (ja) * 1983-06-30 1985-01-21 Showa Denko Kk チアゾリルカ−バメ−ト系化合物及び農園芸用殺菌剤
JPS63241164A (ja) 1987-03-30 1988-10-06 Toshiba Corp スパッタリングターゲットおよび電気配線用合金膜
JPH0196348A (ja) * 1987-10-08 1989-04-14 Tokyo Tungsten Co Ltd 耐腐食性材料
JPH0810299B2 (ja) 1988-03-11 1996-01-31 株式会社精工舎 薄膜トランジスタアレイ
JP2670295B2 (ja) * 1988-04-27 1997-10-29 株式会社東芝 スパッタリングターゲット
EP0374931B1 (de) * 1988-12-21 1994-03-02 Kabushiki Kaisha Toshiba Sputtertarget und Verfahren zu seiner Herstellung
US4913182A (en) * 1989-03-24 1990-04-03 Sloan Valve Company Plumbing fixture check stop
JP2757287B2 (ja) * 1989-11-02 1998-05-25 日立金属株式会社 タングステンターゲットの製造方法
US5824004A (en) * 1990-06-18 1998-10-20 The Procter & Gamble Company Stretchable absorbent articles
JPH05194064A (ja) * 1992-01-21 1993-08-03 Nisshin Steel Co Ltd 金属コーティングしたセラミックス粒及びその製造方法
JP3573778B2 (ja) 1993-03-12 2004-10-06 株式会社東芝 液晶表示装置
US5738948A (en) * 1994-09-29 1998-04-14 Kabushiki Kaisha Toshiba Electrode-wiring material and electrode-wiring substrate using the same
JP3072714B2 (ja) * 1995-09-04 2000-08-07 株式会社デンソー 減速機構付スタータ
US5835177A (en) * 1995-10-05 1998-11-10 Kabushiki Kaisha Toshiba Array substrate with bus lines takeout/terminal sections having multiple conductive layers

Also Published As

Publication number Publication date
TW360926B (en) 1999-06-11
KR100210525B1 (ko) 1999-07-15
EP0947593A2 (de) 1999-10-06
US7153589B1 (en) 2006-12-26
DE69430439D1 (de) 2002-05-23
EP0735152B1 (de) 2002-04-17
EP0735152A1 (de) 1996-10-02
EP0947593A3 (de) 1999-12-15
JP3445276B2 (ja) 2003-09-08
DE69430439T2 (de) 2003-02-06
EP0735152A4 (de) 1997-02-26
WO1995016797A1 (en) 1995-06-22
US6200694B1 (en) 2001-03-13
US5913100A (en) 1999-06-15
KR960706570A (ko) 1996-12-09

Similar Documents

Publication Publication Date Title
ATE216436T1 (de) Molybdän-wolfram-material zum verdrahten, molybdän-wolfram-target zum verdrahten, verfahren zu deren herstellung und dünne molybdän-wolfram verdrahtung
Kim et al. Effects of cooling speed on microstructure and tensile properties of Sn–Ag–Cu alloys
US5312494A (en) High strength and high toughness aluminum alloy
Gao et al. Dynamic recrystallization of copper polycrystals with different purities
JPS63241164A (ja) スパッタリングターゲットおよび電気配線用合金膜
Miyazawa et al. Influences of aging treatment on microstructure and hardness of Sn-(Ag, Bi, Zn) eutectic solder alloys
Zhou et al. Improved mechanical properties induced by In and In & Zn double additions to eutectic Sn58Bi alloy
Chung et al. Microstructural evolution of the Au–20 wt.% Sn solder on the Cu substrate during reflow
El-Daly et al. The role of delayed elasticity and stress relaxation in Sn-Bi-Cu lead-free solders solidified under permanent magnet stirring
El-Daly et al. Improvement of strength-ductility trade-off in a Sn–0.7 Cu–0.2 Ni lead-free solder alloys through Al-microalloying
Bai et al. A low melting high entropy alloy with conformal electroconductivity for flexible electronic circuits
DE2546476C2 (de) Glasartige Legierung auf Uranbasis
El-Taher et al. Viscoplastic characterization of novel (Fe, Co, Te)/Bi containing Sn–3.0 Ag–0.7 Cu lead-free solder alloy
Rai et al. Solidification and thermal behaviour of binary organic eutectic and monotectic; succinonitrile–pyrene system
Chen et al. Interfacial reactions in Sn/Ni–7 wt.% V couple
Gill et al. Laser rapid solidification of Al Cu alloys: banded and plane front growth
Tan et al. Grain refinement of primary Cu6Sn5 in the Sn-3wt% Ag-5wt% Cu alloy by Ge
Jin et al. Microstructure and mechanical properties of indium–bismuth alloys for low melting-temperature solder
Tang et al. Effect of Mn Nanoparticles on Interfacial Intermetallic Compound Growth in Low-Ag Sn-0.3 Ag-0.7 Cu-x Mn Solder Joints
Rai et al. Thermochemical studies on the eutectics and addition compounds in the binary systems of benzidine with p-nitrophenol, m-aminophenol and resorcinol
Liu et al. Effects of Bi and Cu addition on mechanical properties of Sn9Zn alloy and interfacial intermetallic growth with Ni substrate
Wang et al. The microstructure and properties of the Sn-xBi-0.9 Zn-0.3 Ag lead-free solders
Liu et al. The microstructure and mechanical characterization of Al-30% Mg2Si composite with Y inoculation addition
Shen et al. The effects of third alloying elements on the bulk Ag 3 Sn formation in slowly cooled Sn–3.5 Ag lead-free solder
JPS63219546A (ja) 粉末冶金用Ａｌ合金

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification