US9240344B2 - Method for manufacturing SOI wafer - Google Patents

Method for manufacturing SOI wafer Download PDF

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US9240344B2
US9240344B2 US14/360,545 US201214360545A US9240344B2 US 9240344 B2 US9240344 B2 US 9240344B2 US 201214360545 A US201214360545 A US 201214360545A US 9240344 B2 US9240344 B2 US 9240344B2
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wafer
soi
ion implantation
soi wafer
manufacturing
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US20140329372A1 (en
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Hiroji Aga
Norihiro Kobayashi
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a method for manufacturing an SOI wafer, and more particularly to a method for manufacturing an SOI wafer by boning a silicon single crystal wafer having hydrogen ions implanted therein to a base wafer that serves as a support substrate through an oxide film and then delaminating the silicon single crystal wafer.
  • This ion implantation delamination method is a technology for, e.g., forming an oxide film (an insulator film) on at least one of two wafers, implanting gas ions such as hydrogen ions or rare gas ions from an upper surface of one silicon wafer (a bond wafer), forming a micro bubble layer (a sealed layer) in the wafer, then adhering the ion implanted surface to the other silicon wafer (a base wafer) through the oxide film, subsequently applying a heat treatment (a delamination heat treatment) to delaminate one wafer (the bond wafer) into a thin film form with the use of the micro bubble layer as a cleavage surface, and further applying a heat treatment (a bonding heat treatment) to achieve firm bonding, thereby providing an SOI wafer (see Patent Literature 1).
  • the cleavage surface is an excellent mirror surface, and the SOI wafer having high film thickness uniformity of an SOI layer can be relatively easily obtained.
  • mirror polishing (a stock removal: approximately 100 nm) with a very small stock removal that is called touch polishing is carried out in a final process after the bonding heat treatment.
  • Patent Literature 2 suggests adding a heat treatment (a rapid heating/rapid cooling heat treatment (an PTA treatment)) in a reducing atmosphere containing hydrogen without polishing a surface of an SOI layer after a delamination heat treatment (or a bonding heat treatment).
  • Patent Literature 3 suggests forming an oxide film on an SOI layer by a heat treatment in an oxidizing atmosphere after the delamination heat treatment (or the bonding heat treatment), then removing the oxide film, and subsequently adding a heat treatment (the rapid heating/rapid cooling heat treatment (the RTA treatment)) in a reducing atmosphere.
  • Patent Literature 4 a sacrificial oxidation treatment is performed with respect to a delaminated SOI wafer after a flattening heat treatment in an inert gas, a hydrogen gas, or a mixed gas atmosphere containing these gases, whereby flattening of a cleavage surface and avoidance of OSFs can be achieved at the same time.
  • SOI wafers each having a diameter of 300 mm and excellent film thickness uniformity that a film thickness Range (a value obtained by subtracting a minimum value from a maximum value in a radial direction) of each SOI layer is within 3 nm can be obtained in a high-volume production level by the ion implantation delamination method.
  • Patent Literature 1 Japanese Patent Application Publication No. H5-211128
  • Patent Literature 2 Japanese Patent Application Publication No. H11-307472
  • Patent Literature 3 Japanese Patent Application Publication No. 2000-1.24092
  • Patent Literature 4 WO 2003/009386
  • an ion implantation depth (range) distribution is reflected to a film thickness distribution of an SOI layer after delamination as it is, and a cone angle effect is known for a cause of producing the ion implantation depth distribution.
  • a batch processing ion implanter includes a rotor 1 and a plurality of wafer holders 2 which are provided on the rotor 1 and have substrates 3 arranged thereon, respectively. Further, to hold the substrates 3 , the wafer holders 2 are slightly inclined toward the inner side from a rotary surface of the rotor 1 .
  • a radial distribution of the implantation depth is adjusted to be relatively uniform in such a manner that the implantation angle equally shifts at both the end portions of the substrate in the scan direction.
  • the second cause of generation of a film thickness distribution is that channeling occurs in fabrication of a Thin BOX type SOI wafer.
  • a scattering effect provided by an oxide film becomes weak, and channeling occurs in the ion implantation where the implantation angle is set to 0 degree.
  • the batch processing ion implanter since an angle between a crystal plane and the ion beam becomes perpendicular at the central portion of the substrate, a channeling effect becomes considerable, and an ion implantation depth becomes deeper.
  • the channeling effect becomes relatively weak, and the ion implantation depth becomes shallow.
  • the cone angle effect is emphasized by the channeling in particular.
  • a method for inclining an implantation angle and performing implantation is generally known, but the effect of a cone angle differs depending on each of both ends of the substrate in a scan direction when the implant angle is inclined, and hence the radial depth distribution becomes large.
  • a method for avoiding the channeling with the use of a wafer in which an orientation of a crystal axis of the wafer itself is inclined is known, since an implant angle differs depending on each of both end portions in a scan direction like the method for inclining the implant angle, and hence a radial depth distribution becomes large.
  • the cone angle effect provides a depth distribution produced between a central portion of the wafer and each of both end portions of the wafer in a scan direction, and hence a dyad symmetry distribution is provided. Therefore, for example, when the ion implantation is divided into two and the wafer is rotated (rotated on its axis) 90 degrees in each ion implantation, the central portion of the wafer is relatively deep, an outer peripheral portion of the wafer is shallow on a whole circumference, and hence the distribution is close to a distribution of a concentric circle.
  • the ion implantation is not restricted to division into two steps and, if the ion implantation is divided into four steps to be carried out and the wafer is rotated (rotated on its axis) 90 degrees at the time of each ion implantation, the distribution of a concentric circle is further adjusted as compared with the division into two steps.
  • an SOI film thickness distribution of an SOI wafer after delamination is a concentric convex film thickness distribution that is thick at the central portion of the wafer but thin at the outer peripheral portion of the wafer.
  • a stock removal of a thermal oxide film obtained by a sacrificial oxidation treatment thermal oxidation+removal of an oxide film
  • a convex shape cannot be obtained by controlling a radial distribution of the thermal oxide film, an oxidation furnace or a specific boat slot position in a treatment batch where a convex oxide film distribution that cancels out a film thickness distribution at the time of wafer delamination is formed must be experimentally found out, selectively used, and subjected to the sacrificial oxidation treatment, and hence productivity has a problem.
  • a method for manufacturing an SOI wafer having a step of performing a thickness reducing adjustment to an SOI layer of the SOI wafer by carrying out a sacrificial oxidation to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film, wherein, when the thermal oxidation in the sacrificial oxidation treatment is carried out with the use of a batch processing heat treatment furnace during at least either rising of a temperature or falling of a temperature, a substantially concentric oxide film thickness distribution is formed on the surface of the SOI layer.
  • the thermal oxide film having the substantially concentric oxide film thickness distribution can be formed. Therefore, for example, the radial film thickness distribution of the SOI layer produced due to the ion implantation delamination can be canceled out, and each SOI wafer in which the radial film thickness distribution of a finally obtained SOI layer is dramatically improved can be manufactured in a mass-volume production level.
  • the thermal oxidation in the sacrificial oxidation treatment at a predetermined temperature and also perform the same during at least either the rising of a temperature to the predetermined temperature or the falling of a temperature from the predetermined temperature.
  • a thicker concentric thermal oxide film can be formed.
  • a pyrogenic oxidation treatment or a wet oxidation treatment can be used as the thermal oxidation in the sacrificial oxidation treatment.
  • the sacrificial oxidation treatment can be carried out by forming the thermal oxide film based on the pyrogenic oxidation treatment or the wet oxidation treatment and removing the formed thermal oxide film.
  • the SOI wafer that is to be subjected to the sacrificial oxidation treatment by ion-implanting at least one type of gas ions including hydrogen ions and rare gas ions from a surface of a bond wafer made of silicon single crystal to form an ion implanted layer, bonding the ion implanted surface of the bond wafer to a surface of a base wafer through an insulator film, and then delaminating the bond wafer at the ion implanted layer.
  • gas ions including hydrogen ions and rare gas ions
  • the sacrificial oxidation treatment in the present invention is very effective for the SOI wafer manufactured by the ion implantation delamination method having the cone angle effect or the influence of channeling.
  • a heat treatment is added in an inert gas atmosphere at a temperature of approximately 500° C. or more, the bond wafer can be delaminated at the ion implanted layer.
  • external force can be added to effect delamination without adding the heat treatment (or after adding a heat treatment that does not cause the delamination).
  • a batch processing ion implanter that comprises a rotor and a plurality of wafer holders which are provided on the rotor and have substrates arranged thereon respectively, and implants ions into the plurality of substrates that are arranged on the wafer holders and revolve, rotate the bond wafer arranged on each wafer holder on its axis a predetermined rotation angle after each ion implantation, and perform subsequent ion implantation at a rotated arrangement position.
  • the bond wafer can be set on the wafer holder in a direction that differs in accordance with each ion implantation, unevenness in the ion implantation depth distribution can be improved by avoiding the ion implantation at an overlapping arrangement position, and the radial film thickness distribution after the delamination becomes closer to a concentric distribution.
  • the SOI film thickness distribution can be easily improved, and the SOI wafer having the film thickness Range further improved relative to a state immediately after the delamination.
  • the film thickness distribution can be easily corrected by a film reducing adjustment based on the subsequent sacrificial oxidation treatment in the present invention, which is preferable.
  • the unevenness can be further reduced as compared with the case where the ion implantation is carried out divisionally in two steps, the ion implantation depth distribution becomes closer to the concentric shape, and hence the film thickness distribution can be further easily corrected by the film reducing adjustment based on the subsequent sacrificial oxidation treatment.
  • the insulator film it is preferable for the insulator film to be a silicon oxide film of 100 nm or less.
  • the Thin BOX type SOI wafer having the silicon oxide film of 100 nm or less that is hard to provide the excellent film thickness uniformity in the prior art it is possible to manufacture the thin film SOI wafer having the very excellent film thickness uniformity that the radial film thickness Range is 1 nm or less in the present invention.
  • an angle between a crystal plane on a surface of the bond wafer and a direction of the ion implantation is preferable to set an angle between a crystal plane on a surface of the bond wafer and a direction of the ion implantation to be perpendicular and carry out each ion implantation.
  • the subsequent film reducing adjustment based on the sacrificial oxidation treatment in the present invention enables further easily correcting the film thickness distribution, which is preferable.
  • the thermal oxide film having the substantially concentric film thickness distribution can be formed in the thermal oxidation of the sacrificial oxidation treatment. Therefore, since the SOI wafer having the dramatically improved film thickness uniformity can be eventually manufactured in the mass-volume production level, a threshold voltage of a device using such an SOI wafer can be stabilized, thereby improving a device yield.
  • FIG. 1 is a process flowchart showing an example of a method for manufacturing an SOI wafer according to the present invention
  • FIG. 2 is an explanatory view of ion implantation delamination in a plurality of step (two steps) and an improvement in film thickness distribution based on a sacrificial oxidation treatment according to the present invention
  • FIG. 3 is a graph showing thermal oxidation conditions in Examples 1 and 2 and Comparative Example
  • FIG. 4 is a view showing oxide film thickness distributions of thermal oxide films after thermal oxidation (1) and thermal oxidation (2) in Examples 1 and 2, respectively;
  • FIG. 5 is a schematic view of a batch processing ion implantation apparatus.
  • FIG. 6 is an explanatory view for explaining a cone angle effect.
  • an SOI wafer manufacturing method that enables manufacturing an SOI wafer having an improved radial film thickness distribution with good productivity by performing a sacrificial oxidation treatment that enables forming an oxide film having a substantially concentric film thickness distribution that can cancel out a substantially concentric film thickness distribution (e.g., a convex shape) of an SOI layer in the SOI wafer produced due to ion implantation delamination or the like.
  • a substantially concentric oxide film thickness distribution can be easily formed in a radial direction when an oxidation treatment is carried out during falling of a temperature or rising of a temperature in a batch processing heat treatment furnace.
  • the present inventors provides an SOI wafer manufacturing method having a step of performing a thickness reducing adjustment to an SOI layer of the SOI wafer by carrying out a sacrificial oxidation treatment to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film, the method characterized in that the thermal oxidation in the sacrificial oxidation treatment is performed during at least either rising of a temperature or falling of a temperature with the use of a batch processing heat treatment furnace, thereby forming a substantially concentric oxide film thickness distribution on the surface of the SOI layer.
  • FIG. 1 is a process flowchart showing an example of a method for manufacturing an SOI wafer according to the present invention.
  • FIG. 1 is a process flowchart of the method for manufacturing an SOI wafer according to the present invention when the ion implantation delamination method is used.
  • FIG. 1(A) at least one type of gas ions including hydrogen ions and rare gas ions is ion-implanted from a surface of a bond wafer made of silicon single crystal, whereby an ion implanted layer is formed (an ion implantation step).
  • hydrogen molecular ions are also included in the “hydrogen ions”.
  • an insulator film on the surface of the bond wafer before the ion implantation in advance.
  • a cone angle effect is emphasized by channeling.
  • the Thin BOX type thin film SOI wafer by way of trial and examining transition of a radial film thickness Range of the SOI within a process, it was found out that the radial film thickness Range already exceeded 1 nm immediately after the delamination.
  • the bond water is a silicon single crystal wafer having a diameter of 300 mm or more that allows the cone angle effect to considerably appear and the insulator film is a silicon oxide film of 100 nm or less or 50 nm or less, the Thin BOX type thin film SOI wafer having excellent film thickness uniformity can be manufactured.
  • a batch processing ion implanter that is schematically shown in FIG. 5 can be used for the ion implantation.
  • the ion implanter 10 includes a rotor 1 and a plurality of wafer holders 2 which are provided on the rotor and have substrates 3 arranged thereon, respectively, and it is configured to implant ions into the plurality of substrates 3 that are arranged on the wafer holders 2 and revolve.
  • FIG. 1(A) it is preferable to divisionally carry out the ion implantation of the ion implantation step into each bond wafer 3 in a plurality of steps, rotate each bond wafer 3 arranged on each wafer holder 2 on its axis a predetermined rotation angle after each ion implantation, and perform subsequent ion implantation at a rotated arrangement position. It is to be noted that FIG. 1(A)
  • 1(A) shows an example of divisionally carrying out the ion implantation n time (n ⁇ 2), which is a case where the bond wafer 3 is rotated on its axis 90° (a position of a notch 3′ is moved 90°) after the first ion implantation and the second ion implantation is carried out at this rotated arrangement position.
  • an ion implantation depth is relatively deep at a central portion of the bond wafer but shallow at a whole circumference of an outer peripheral portion of the bond wafer, and a uniform distribution is provided and becomes closer to a concentric distribution.
  • the concentric distribution can be further adjusted as compared with the ion implantation performed in the two steps.
  • the ion implanted surface of the bond wafer is bonded to a surface of a base wafer through an insulator film (a bonding step).
  • a silicon single crystal wafer can be used, but it is not restricted in particular.
  • the wafers are bonded without using an adhesive or the like when the surfaces of the bond wafer and the base wafer are brought into contact with each other in a clean atmosphere at an ordinary temperature.
  • the bond wafer when a heat treatment is added in an inert gas atmosphere at a temperature of approximately 500° C. or more, the bond wafer can be delaminated at the ion implanted layer. Further, when a plasma treatment is performed with respect to a bonding surface at an ordinary temperature, external force can be applied to effect the delamination without adding the heat treatment (after adding a heat treatment that does not cause the delamination).
  • the film thickness distribution of such an SOI layer immediately after the delamination step is improved so that the film thickness Range is 1 nm or less, and the film thickness distribution becomes closer to the concentric shape in particular, even in case of the Thin BOX type which has a large diameter of 300 mm or 450 mm and the insulator film of 100 nm or less.
  • the SOI wafer after the delamination is subjected to the sacrificial oxidation treatment for performing thermal oxidation to the surface of the SOI layer and removing a formed thermal oxide film, thereby performing a film reducing adjustment with respect to the SOI layer of the SOI wafer.
  • the present invention is characterized in that the substantially concentric oxide film thickness distribution is formed on the surface of the SOI layer by performing the thermal oxidation in the sacrificial oxidation treatment during at least either rising of a temperature or falling of a temperature with the use of the batch processing heat treatment furnace.
  • the thermal oxide film having the substantially concentric oxide film thickness distribution can be formed in this manner, the SOI wafer having the dramatically improved film thickness uniformity can be eventually manufactured in the mass-volume production level.
  • the thermal oxidation is carried out, for example, during the falling of a temperature (temperature-fall oxidation) with the use of the batch processing heat treatment furnace, heat can be easily radiated at the outer peripheral portion of the wafer rather than the central portion of the wafer, and a relatively low temperature is achieved. Therefore, when the thermal oxidation is performed during the falling of a temperature, the oxide film thickness distribution of the thermal oxide film has a substantially concentric convex shape.
  • a difference in oxide film thickness between the central portion and the outer peripheral portion is large as a temperature at the time of temperature-fall oxidation is high, a difference between an initial temperature and a temperature till end of the oxidation is large, a temperature gradient is high, and a size of a gap (a slot interval) with respect to the wafer on an upper surface in a batch is narrow, and appropriately selecting these parameters enables obtaining the substantially concentric convex thermal oxide film having a desired oxide film thickness distribution.
  • the ion implantation depth is relatively deep at the central portion of the bond wafer but shallow at the whole circumference of the outer peripheral portion of the bond wafer, and the uniform distribution is provided and becomes closer to the concentric convex distribution. Therefore, when the SOI wafer that has such a convex film thickness distribution immediately after the delamination is subjected to the thermal oxidation treatment based on the temperature-fall oxidation and the formed thermal oxide film is removed, the SOI film thickness distribution can be controlled and improved.
  • FIG. 2 is an explanatory view of a radial film thickness distribution of the SOI layer when the ion implantation is divisionally performed in two steps and then the sacrificial oxidation treatment based on the temperature-fall oxidation is carried out. Since combining the sacrificial oxidation in the present invention with the ion implantation divisionally performed in a plurality of steps enables canceling out the convex SOI film thickness distribution after the delamination, the SOI wafer having the improved radial film thickness distribution can be manufactured with the excellent productivity.
  • the sacrificial oxidation treatment may be carried out in combination with a flattening heat treatment (a high-temperature heat treatment in an atmosphere of an inert gas, a hydrogen gas, or a mixed gas of these gases) in some cases.
  • a flattening heat treatment a high-temperature heat treatment in an atmosphere of an inert gas, a hydrogen gas, or a mixed gas of these gases
  • the SOI layer is slightly etched and, at this time, an etching amount is higher at the outer peripheral portion of the wafer than at the central portion of the wafer, and hence the SOI film thickness distribution after the flattening heat treatment tends to be degraded into a convex shape by approximately 0.5 to 2 nm. Therefore, applying the sacrificial oxidation in the present invention can improve the SOI film thickness distribution degraded at the time of the flattening heat treatment.
  • a temperature during the rising of a temperature is relatively higher at the outer peripheral portion close to a heater than at the central portion, and a concave radial distribution of the oxide film thickness to be formed can be obtained.
  • a size of this concave shape can be also controlled by a temperature at the time of the temperature-rise oxidation, a difference between an initial temperature and a temperature till end of the oxidation, a temperature gradient, and a size of a gap (a slot interval) with respect to a wafer on an upper surface in a batch.
  • the temperature-rise oxidation can be adapted to an improvement in the film thickness distribution of the SOI wafer.
  • the thermal oxidation in the sacrificial oxidation treatment at a predetermined temperature and also performed during at least either the rising of a temperature to the predetermined temperature or the falling of a temperature from the predetermined temperature.
  • the temperature-rise or temperature-fall oxidation can be carried out before and after oxidation at a predetermined temperature (e.g., 800° C. to 1000° C.) that is effected as an oxidation treatment, e.g., a conventional sacrificial oxidation, or the temperature-rise oxidation or temperature-fall oxidation treatment alone can be performed as a single treatment.
  • a predetermined temperature e.g. 800° C. to 1000° C.
  • an oxidation treatment e.g., a conventional sacrificial oxidation
  • the temperature-rise oxidation or temperature-fall oxidation treatment alone can be performed as a single treatment.
  • a temperature raising/temperature falling rate can be set to, e.g., 0.1 to 10° C./min.
  • (the temperature-fall oxidation to the predetermined temperature)+(the oxidation at the predetermined temperature) can be performed after once raising a temperature beyond the predetermined temperature, or the temperature-rise oxidation can be carried out while raising a temperature beyond the predetermined temperature (i.e., (the oxidation at the predetermined temperature)+(the temperature-rise oxidation from the predetermined temperature)) after effecting the oxidation at the predetermined temperature.
  • Example 1 a buried oxide film that is 25 nm thick was fabricated on a silicon wafer with a diameter of 300 mm made of silicon single crystal having a crystal orientation ⁇ 100> (a crystal plane on a surface is precisely (100) without an angular deviation), and then hydrogen ion implantation was carried out.
  • the ion implantation was divisionally carried out in two steps with the use of a batch processing ion implanter, first implantation was performed with H + , 30 keV, 2.6 e16 cm ⁇ 2 , an implantation angle of 0 degree, and a notch orientation angle of 0 degree, and second implantation was effected with H + , 30 keV, 2.6e16 cm ⁇ 2 , an implantation angle of 0 degree, and a notch orientation angle of 90 degrees.
  • the wafer was bonded to a base wafer and delaminated at a hydrogen ion implanted layer by a nitrogen atmosphere heat treatment performed at 500° C. for 30 minutes. Thereafter, as shown in FIG.
  • thermo oxidation (1) a temperature-fall oxidation treatment for continuing a pyrogenic oxidation treatment until 850° C. was performed during the falling of a temperature after the pyrogenic oxidation treatment effected at 900° C.
  • thermal oxidation (1) A oxide film thickness after the thermal oxidation was 250 nm.
  • a oxide film thickness distribution was measured by using a PW monitor made of mirror-polished silicon single crystal, an oxide film thickness Range (Max ⁇ Min) in a radial direction provided by the temperature-fall oxidation treatment was 1.1 nm, and a concentric distribution that is thick at a central portion and thin at an outer periphery was obtained.
  • thermo oxidation (2) The radial oxidation film thickness Range after the oxidation treatment was 0.9 nm.
  • a radial SOI film thickness distribution Range was 0.7 nm, and the excellent radial distribution was obtained.
  • the conventional oxidation at a fixed temperature of 900° C. was effected (the thermal oxidation (1)).
  • An oxide film thickness after the thermal oxidation was 250 nm.
  • a concentric distribution was out of shape, and a radial oxide film thickness Range of 0.4 nm.
  • the flattening heat treatment was performed in an Ar atmosphere, the temperature-fall oxidation treatment for continuing the pyrogenic oxidation treatment until 900° C. was carried out during the falling of a temperature after the pyrogenic oxidation treatment effected at 950° C. (the thermal oxidation (2)).
  • a oxide film thickness after the thermal oxidation was 440 nm.
  • a oxide film thickness distribution was measured by using a PW monitor, a radial oxide film thickness Range (Max ⁇ Min) provided by the temperature-fall oxidation treatment was 1.4 nm, and a concentric distribution that is thick at a central portion and thin at an outer periphery was obtained.
  • a radial SOI film thickness distribution Range was 0.8 nm, and the excellent radial distribution was obtained.
  • a thin film SOI wafer having an SOI film thickness of 10 nm was fabricated under the same conditions as those of Example 1 except that the thermal oxidation (2) of Example 1 is the temperature-fall oxidation that is the same as the thermal oxidation (2) in Example 2.
  • the thermal oxidation (2) of Example 1 is the temperature-fall oxidation that is the same as the thermal oxidation (2) in Example 2.
  • Range was 0.5 nm, and the very excellent radial distribution was obtained.
  • thermal oxidation (1) After performing the ion implantation delamination like Example 1, as shown in FIG. 3 , conventional oxidation at a fixed temperature of 900° C. was carried out (the thermal oxidation (1)). An oxide film thickness after the thermal oxidation was 250 nm. A concentric distribution was out of shape, and a radial oxide film thickness Range was 0.4 nm. Subsequently, the flattening thermal oxidation was performed in an Ar atmosphere, and then the conventional oxidation at a fixed temperature of 950° C. was conducted (the thermal oxidation (2)), whereby a radial oxide film thickness Range of 0.9 nm.
  • a film thickness distribution of a 10-nm SOI after removal of a sacrificial oxide film was 1.2 nm in terms of Range in Comparative Example.
  • Table 1 shows ion implantation delamination conditions, sacrificial oxidation treatment conditions, and results of Examples 1 and 2 and Comparative Example. Further, FIG. 4 shows each oxide film thickness distribution of the PW monitor after the thermal oxidation (the thermal oxidation (1), the thermal oxidation (2)) in Examples 1 and 2. It is to be noted that, in Examples 1 to 3 and Comparative Example, a vertical heat treatment furnace having a wafer rotary mechanism was used for the thermal oxidation.
  • FILM THICKNESS Range 1.1 nm FLATTENING HEAT Ar, 1200° C., 1 hr Ar, 1200° C., 1 hr Ar, 1200° C., 1 hr TREATMENT SOI FILM THICKNESS Range: 1.1 nm Range: 1.4 nm Range: 1.4 nm DISTRIBITION AFTER FLATTENING HEAT TREATMENT THERMAL OXIDATION WITHOUT TEMPERATURE- WITH TEMPURATURE- WITH TEMPURATURE- (2): SEE FIG. 3 FALL OXIDATION FALL OXIDATION FALL OXIDATION 950° C. 950° C.

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