US5610082A - Method for fabricating thin film transistor using back light exposure - Google Patents

Method for fabricating thin film transistor using back light exposure Download PDF

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Publication number
US5610082A
US5610082A US08/174,208 US17420893A US5610082A US 5610082 A US5610082 A US 5610082A US 17420893 A US17420893 A US 17420893A US 5610082 A US5610082 A US 5610082A
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United States
Prior art keywords
photoresist film
layer
patterned
gate electrode
resulting structure
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Expired - Lifetime
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US08/174,208
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English (en)
Inventor
Eui Y. Oh
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LG Display Co Ltd
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LG Electronics Inc
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Filing date
Publication date
Priority claimed from KR1019920026233A external-priority patent/KR940016916A/ko
Priority claimed from KR1019920026230A external-priority patent/KR100290919B1/ko
Priority claimed from KR1019930000263A external-priority patent/KR960008737B1/ko
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Assigned to GOLDSTAR CO., LTD. reassignment GOLDSTAR CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OH, EUI YEOL
Assigned to LG ELECTRONICS INC. reassignment LG ELECTRONICS INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: GOLDSTAR CO., LTD.
Publication of US5610082A publication Critical patent/US5610082A/en
Application granted granted Critical
Assigned to LG. PHILIPS LCD CO., LTD. reassignment LG. PHILIPS LCD CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LG ELECTRONICS, INC.
Assigned to LG.PHILIPS LCD CO., LTD. reassignment LG.PHILIPS LCD CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LG ELECTRONICS INC.
Assigned to LG DISPLAY CO., LTD. reassignment LG DISPLAY CO., LTD. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: LG.PHILIPS LCD CO., LTD.
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric

Definitions

  • This conventional method is used for fabricating an etch stopper type TFT.
  • FIG. 5 is a schematic view showing a path of light passing through different mediums
  • FIGS. 10a to 10f are sectional views respectively illustrating a method for fabricating a TFT in accordance with a fifth embodiment of the present invention.
  • two independent patterning steps are carried out for an etch stopper layer and a semiconductor layer, in place of the above-mentioned simultaneous patterning.
  • An ion implantation is carried out for forming a high concentration n-type doped semiconductor layer.
  • a silicide layer is also formed.
  • elements corresponding to those in FIGS. 4a to 4f are denoted by the same reference numerals.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
US08/174,208 1992-12-29 1993-12-28 Method for fabricating thin film transistor using back light exposure Expired - Lifetime US5610082A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1992/26230 1992-12-29
KR1992/26233 1992-12-29
KR1019920026233A KR940016916A (ko) 1992-12-29 1992-12-29 박막트랜지스터 제조방법
KR1019920026230A KR100290919B1 (ko) 1992-12-29 1992-12-29 박막트랜지스터제조방법
KR1019930000263A KR960008737B1 (ko) 1993-01-11 1993-01-11 자기 정합을 이용한 박막트랜지스터
KR1993/263 1993-01-11

Publications (1)

Publication Number Publication Date
US5610082A true US5610082A (en) 1997-03-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
US08/174,208 Expired - Lifetime US5610082A (en) 1992-12-29 1993-12-28 Method for fabricating thin film transistor using back light exposure

Country Status (4)

Country Link
US (1) US5610082A (ja)
JP (1) JP3537854B2 (ja)
DE (1) DE4344897B4 (ja)
FR (1) FR2700062B1 (ja)

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766988A (en) * 1994-05-12 1998-06-16 Lg Semicon Co., Ltd. Fabricating method for a thin film transistor with a negatively sloped gate
US6020214A (en) * 1997-07-18 2000-02-01 Nec Corporation Method for manufacturing thin film transistor array substrate
US6063653A (en) * 1998-07-07 2000-05-16 Industrial Technology Research Institute Method of fabricating a TFT-LCD
US6156583A (en) * 1998-06-13 2000-12-05 Lg Philips Lcd Co., Ltd. Method for manufacturing a liquid crystal display device
US6229156B1 (en) * 1996-10-28 2001-05-08 Mitsubishi Denki Kabushiki Kaisha Inverted thin film transistor having a trapezoidal-shaped protective layer
US20010028071A1 (en) * 2000-02-11 2001-10-11 Soon-Sung Yoo Array substrate for use in LCD device and method of fabricating same
WO2002019412A1 (en) * 2000-08-26 2002-03-07 Koninklijke Philips Electronics N.V. A method of forming a bottom-gate thin film transistor
US6387740B1 (en) * 1999-08-12 2002-05-14 Hannstar Display Corp. Tri-layer process for forming TFT matrix of LCD with reduced masking steps
US6436740B1 (en) * 1999-07-30 2002-08-20 Hannstar Display Corp. Tri-layer process for forming TFT matrix of LCD with reduced masking steps
US6465285B2 (en) * 1998-09-30 2002-10-15 International Business Machines Corporation Liquid crystal device, liquid crystal display panel and method for manufacturing the same
US6710409B1 (en) 2002-10-15 2004-03-23 Matrix Semiconductor, Inc. Inverted staggered thin film transistor with etch stop layer and method of making same
US20040195568A1 (en) * 2003-02-20 2004-10-07 Nec Corporation Thin film transistor substrate and method for manufacturing the same
US20040227865A1 (en) * 2000-10-31 2004-11-18 Lg. Philips Lcd Co., Ltd. Array substrate for a liquid crystal display and method for fabricating thereof
US20070190466A1 (en) * 2006-02-15 2007-08-16 Yi-Wei Lee Manufacturing method for pixel structure
US20070281853A1 (en) * 2006-06-06 2007-12-06 Chi-Yuan Lee Manufacturing method of fuel cell with integration of catalytic layer and micro sensors
US20080206914A1 (en) * 2007-02-26 2008-08-28 Michael Albert Haase Patterning self-aligned transistors using back surface illumination
US20090278120A1 (en) * 2008-05-09 2009-11-12 Korea Institute Of Science And Technology Thin Film Transistor
US20100208158A1 (en) * 2009-02-13 2010-08-19 Apple Inc. LCD Panel with Index-Matching Passivation Layers
US20110255044A1 (en) * 2010-04-16 2011-10-20 Samsung Mobile Display Co., Ltd. Display device and fabrication method of the same
US20120146042A1 (en) * 2010-12-08 2012-06-14 Ki-Tae Kim Micro-crystalline thin film transistor, display device including the same and manufacturing method thereof
CN102800705A (zh) * 2011-05-24 2012-11-28 北京大学 一种金属氧化物半导体薄膜晶体管的制作方法
JP2013084944A (ja) * 2011-09-29 2013-05-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8629000B2 (en) 2009-02-20 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US20140061634A1 (en) * 2012-02-27 2014-03-06 Boe Technology Group Co., Ltd. Thin film transistor, method for manufacturing the same, array substrate and display device
US8716702B2 (en) 2010-10-22 2014-05-06 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same
US8853066B2 (en) * 2012-11-08 2014-10-07 Hannstar Display Corporation Method for manufacturing pixel structure
US20150031168A1 (en) * 2013-07-25 2015-01-29 Ye Xin Technology Consulting Co., Ltd. Display panel and manufacturing method thereof
US20170294543A1 (en) * 2016-04-08 2017-10-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same

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GB2307768B (en) * 1995-11-25 1998-06-10 Lg Electronics Inc Matrix array of active matrix lcd and manufacturing method thereof
KR100601168B1 (ko) * 1999-05-13 2006-07-13 삼성전자주식회사 박막 트랜지스터 기판 및 그의 제조 방법
US6261880B1 (en) * 1999-05-24 2001-07-17 Chi Mei Electronics Corp Process for manufacturing thin film transistors
GB9919913D0 (en) * 1999-08-24 1999-10-27 Koninkl Philips Electronics Nv Thin-film transistors and method for producing the same
JP4801248B2 (ja) * 2000-10-31 2011-10-26 アプライド マテリアルズ インコーポレイテッド 酸化膜形成方法及び装置
KR100480331B1 (ko) * 2002-04-08 2005-04-06 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그의 제조방법
US9401431B2 (en) * 2009-04-21 2016-07-26 Cbrite Inc. Double self-aligned metal oxide TFT

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4778773A (en) * 1986-06-10 1988-10-18 Nec Corporation Method of manufacturing a thin film transistor
US4943837A (en) * 1987-03-11 1990-07-24 Hitachi, Ltd. Thin film semiconductor device and method of fabricating the same
US4960719A (en) * 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
JPH0316214A (ja) * 1989-06-14 1991-01-24 Matsushita Electric Ind Co Ltd 絶縁膜の製造方法
JPH03149883A (ja) * 1989-11-07 1991-06-26 Toppan Printing Co Ltd 薄膜トランジスタ
US5028551A (en) * 1986-03-06 1991-07-02 Kabushiki Kaisha Toshiba Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device
US5041888A (en) * 1989-09-18 1991-08-20 General Electric Company Insulator structure for amorphous silicon thin-film transistors
US5045753A (en) * 1989-03-28 1991-09-03 Sharp Kabushiki Kaisha Matrix display apparatus with repair wires
US5071779A (en) * 1988-07-13 1991-12-10 Seikosha Co., Ltd. Method for producing a silicon thin film transistor
JPH043469A (ja) * 1990-04-19 1992-01-08 Nec Corp 薄膜トランジスタ及びその製造方法
US5091337A (en) * 1987-12-26 1992-02-25 Seikosha Co., Ltd. Method of manufacturing amorphous-silicon thin-film transistors
JPH04186734A (ja) * 1990-11-20 1992-07-03 Seiko Epson Corp 半導体装置の製造方法
US5137841A (en) * 1985-03-29 1992-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a thin film transistor using positive and negative photoresists
JPH04304677A (ja) * 1991-04-01 1992-10-28 Ricoh Co Ltd アモルファスシリコン薄膜半導体装置とその製法
JPH04307941A (ja) * 1991-04-05 1992-10-30 Seiko Epson Corp 薄膜トランジスタの製造方法
US5243202A (en) * 1990-04-25 1993-09-07 Casio Computer Co., Ltd. Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
US5248630A (en) * 1987-07-27 1993-09-28 Nippon Telegraph And Telephone Corporation Thin film silicon semiconductor device and process for producing thereof
US5254488A (en) * 1988-01-04 1993-10-19 International Business Machines Corporation Easily manufacturable thin film transistor structures
US5306653A (en) * 1991-08-27 1994-04-26 Goldstar Co., Ltd. Method of making thin film transistors
US5326712A (en) * 1991-12-03 1994-07-05 Samsung Electronics Co., Ltd. Method for manufacturing a thin film transistor
US5371025A (en) * 1991-09-06 1994-12-06 Gold Star, Ltd. Method of making thin film transistors
US5374570A (en) * 1989-03-17 1994-12-20 Fujitsu Limited Method of manufacturing active matrix display device using insulation layer formed by the ale method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147069A (ja) * 1982-02-25 1983-09-01 Sharp Corp 薄膜トランジスタ
US4888632A (en) * 1988-01-04 1989-12-19 International Business Machines Corporation Easily manufacturable thin film transistor structures
JP2938121B2 (ja) * 1990-03-30 1999-08-23 株式会社東芝 薄膜半導体装置の製造方法

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5137841A (en) * 1985-03-29 1992-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a thin film transistor using positive and negative photoresists
US5028551A (en) * 1986-03-06 1991-07-02 Kabushiki Kaisha Toshiba Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device
US4778773A (en) * 1986-06-10 1988-10-18 Nec Corporation Method of manufacturing a thin film transistor
US4943837A (en) * 1987-03-11 1990-07-24 Hitachi, Ltd. Thin film semiconductor device and method of fabricating the same
US5248630A (en) * 1987-07-27 1993-09-28 Nippon Telegraph And Telephone Corporation Thin film silicon semiconductor device and process for producing thereof
US5091337A (en) * 1987-12-26 1992-02-25 Seikosha Co., Ltd. Method of manufacturing amorphous-silicon thin-film transistors
US5254488A (en) * 1988-01-04 1993-10-19 International Business Machines Corporation Easily manufacturable thin film transistor structures
US4960719A (en) * 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
US5071779A (en) * 1988-07-13 1991-12-10 Seikosha Co., Ltd. Method for producing a silicon thin film transistor
US5374570A (en) * 1989-03-17 1994-12-20 Fujitsu Limited Method of manufacturing active matrix display device using insulation layer formed by the ale method
US5045753A (en) * 1989-03-28 1991-09-03 Sharp Kabushiki Kaisha Matrix display apparatus with repair wires
JPH0316214A (ja) * 1989-06-14 1991-01-24 Matsushita Electric Ind Co Ltd 絶縁膜の製造方法
US5041888A (en) * 1989-09-18 1991-08-20 General Electric Company Insulator structure for amorphous silicon thin-film transistors
JPH03149883A (ja) * 1989-11-07 1991-06-26 Toppan Printing Co Ltd 薄膜トランジスタ
JPH043469A (ja) * 1990-04-19 1992-01-08 Nec Corp 薄膜トランジスタ及びその製造方法
US5243202A (en) * 1990-04-25 1993-09-07 Casio Computer Co., Ltd. Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
JPH04186734A (ja) * 1990-11-20 1992-07-03 Seiko Epson Corp 半導体装置の製造方法
JPH04304677A (ja) * 1991-04-01 1992-10-28 Ricoh Co Ltd アモルファスシリコン薄膜半導体装置とその製法
JPH04307941A (ja) * 1991-04-05 1992-10-30 Seiko Epson Corp 薄膜トランジスタの製造方法
US5306653A (en) * 1991-08-27 1994-04-26 Goldstar Co., Ltd. Method of making thin film transistors
US5371025A (en) * 1991-09-06 1994-12-06 Gold Star, Ltd. Method of making thin film transistors
US5326712A (en) * 1991-12-03 1994-07-05 Samsung Electronics Co., Ltd. Method for manufacturing a thin film transistor

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
S. Wolf & R. N. Tauber "Silicon Proc. For the VLSI Era" vol. I, p. 308, 1986.
S. Wolf & R. N. Tauber Silicon Proc. For the VLSI Era vol. I, p. 308, 1986. *
S. Wolf & R. N. Tauber, "Silicon Proc. For the VLSI Era", vol. I, 1986, pp. 531-533, 550-553, 556-557, 546, 581.
S. Wolf & R. N. Tauber, Silicon Proc. For the VLSI Era , vol. I, 1986, pp. 531 533, 550 553, 556 557, 546, 581. *

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766988A (en) * 1994-05-12 1998-06-16 Lg Semicon Co., Ltd. Fabricating method for a thin film transistor with a negatively sloped gate
US6229156B1 (en) * 1996-10-28 2001-05-08 Mitsubishi Denki Kabushiki Kaisha Inverted thin film transistor having a trapezoidal-shaped protective layer
US6020214A (en) * 1997-07-18 2000-02-01 Nec Corporation Method for manufacturing thin film transistor array substrate
US6156583A (en) * 1998-06-13 2000-12-05 Lg Philips Lcd Co., Ltd. Method for manufacturing a liquid crystal display device
US6063653A (en) * 1998-07-07 2000-05-16 Industrial Technology Research Institute Method of fabricating a TFT-LCD
US20030013247A1 (en) * 1998-09-30 2003-01-16 International Business Machines Corporation Liquid crystal device, liquid crystal display panel and method for manufacturing the same
US7061018B2 (en) * 1998-09-30 2006-06-13 International Business Machines Corporation Liquid crystal device, liquid crystal display panel and method for manufacturing the same
US6465285B2 (en) * 1998-09-30 2002-10-15 International Business Machines Corporation Liquid crystal device, liquid crystal display panel and method for manufacturing the same
US6436740B1 (en) * 1999-07-30 2002-08-20 Hannstar Display Corp. Tri-layer process for forming TFT matrix of LCD with reduced masking steps
US6387740B1 (en) * 1999-08-12 2002-05-14 Hannstar Display Corp. Tri-layer process for forming TFT matrix of LCD with reduced masking steps
US20010028071A1 (en) * 2000-02-11 2001-10-11 Soon-Sung Yoo Array substrate for use in LCD device and method of fabricating same
US6627470B2 (en) * 2000-02-11 2003-09-30 Lg.Philips Lcd Co., Ltd. Array substrate for use in LCD device and method of fabricating same
US6992364B2 (en) 2000-02-11 2006-01-31 Lg.Philips Lcd Co., Ltd. Array substrate for use in LCD device and method of fabricating same
WO2002019412A1 (en) * 2000-08-26 2002-03-07 Koninklijke Philips Electronics N.V. A method of forming a bottom-gate thin film transistor
US20040227865A1 (en) * 2000-10-31 2004-11-18 Lg. Philips Lcd Co., Ltd. Array substrate for a liquid crystal display and method for fabricating thereof
US7351621B2 (en) * 2000-10-31 2008-04-01 Lg.Philips Lcd Co., Ltd. Array substrate for a liquid crystal display and method for fabricating thereof
US7696026B2 (en) 2000-10-31 2010-04-13 Lg Display Co., Ltd. Array substrate for a liquid crystal display and method for fabricating thereof
US20080213950A1 (en) * 2000-10-31 2008-09-04 Kyo-Ho Moon Array substrate for a liquid crystal display and method for fabricating thereof
US6710409B1 (en) 2002-10-15 2004-03-23 Matrix Semiconductor, Inc. Inverted staggered thin film transistor with etch stop layer and method of making same
US20040145005A1 (en) * 2002-10-15 2004-07-29 Matrix Semiconductor, Inc. Inverted staggered thin film transistor with etch stop layer and method of making same
US6825533B2 (en) 2002-10-15 2004-11-30 Matrix Semiconductor, Inc. Inverted staggered thin film transistor with etch stop layer and method of making same
US7709904B2 (en) * 2003-02-20 2010-05-04 Nec Corporation Thin film transistor substrate and method for manufacturing the same
US20040195568A1 (en) * 2003-02-20 2004-10-07 Nec Corporation Thin film transistor substrate and method for manufacturing the same
US20070190466A1 (en) * 2006-02-15 2007-08-16 Yi-Wei Lee Manufacturing method for pixel structure
US7704681B2 (en) 2006-02-15 2010-04-27 Au Optronics Corp. Manufacturing method for pixel structure
US20070281853A1 (en) * 2006-06-06 2007-12-06 Chi-Yuan Lee Manufacturing method of fuel cell with integration of catalytic layer and micro sensors
WO2008106017A1 (en) * 2007-02-26 2008-09-04 3M Innovative Properties Company Patterning self-aligned transistors using back surface illumination
US7629206B2 (en) 2007-02-26 2009-12-08 3M Innovative Properties Company Patterning self-aligned transistors using back surface illumination
US20080206914A1 (en) * 2007-02-26 2008-08-28 Michael Albert Haase Patterning self-aligned transistors using back surface illumination
US20090278120A1 (en) * 2008-05-09 2009-11-12 Korea Institute Of Science And Technology Thin Film Transistor
US8558978B2 (en) * 2009-02-13 2013-10-15 Apple Inc. LCD panel with index-matching passivation layers
US20100208158A1 (en) * 2009-02-13 2010-08-19 Apple Inc. LCD Panel with Index-Matching Passivation Layers
US9443981B2 (en) 2009-02-20 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US11011549B2 (en) * 2009-02-20 2021-05-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US9859306B2 (en) 2009-02-20 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US10586811B2 (en) 2009-02-20 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8629000B2 (en) 2009-02-20 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US10096623B2 (en) 2009-02-20 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US9209283B2 (en) 2009-02-20 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8987822B2 (en) 2009-02-20 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US11824062B2 (en) 2009-02-20 2023-11-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8988640B2 (en) * 2010-04-16 2015-03-24 Samsung Display Co., Ltd. Display device and fabrication method of the same
US20110255044A1 (en) * 2010-04-16 2011-10-20 Samsung Mobile Display Co., Ltd. Display device and fabrication method of the same
US8716702B2 (en) 2010-10-22 2014-05-06 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same
US20120146042A1 (en) * 2010-12-08 2012-06-14 Ki-Tae Kim Micro-crystalline thin film transistor, display device including the same and manufacturing method thereof
CN102800705B (zh) * 2011-05-24 2015-01-07 北京大学 一种金属氧化物半导体薄膜晶体管的制作方法
CN102800705A (zh) * 2011-05-24 2012-11-28 北京大学 一种金属氧化物半导体薄膜晶体管的制作方法
US9466726B2 (en) 2011-09-29 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013084944A (ja) * 2011-09-29 2013-05-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US9905702B2 (en) 2011-09-29 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20140061634A1 (en) * 2012-02-27 2014-03-06 Boe Technology Group Co., Ltd. Thin film transistor, method for manufacturing the same, array substrate and display device
US9502235B2 (en) * 2012-02-27 2016-11-22 Boe Technology Group Co., Ltd. Thin film transistor, method for manufacturing the same, array substrate and display device
US8853066B2 (en) * 2012-11-08 2014-10-07 Hannstar Display Corporation Method for manufacturing pixel structure
US9257565B2 (en) * 2013-07-25 2016-02-09 Ye Xin Technology Consulting Co., Ltd. Display panel and manufacturing method thereof
US20150031168A1 (en) * 2013-07-25 2015-01-29 Ye Xin Technology Consulting Co., Ltd. Display panel and manufacturing method thereof
US20170294543A1 (en) * 2016-04-08 2017-10-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
US11302717B2 (en) * 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same

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JPH06244204A (ja) 1994-09-02
FR2700062B1 (fr) 1996-08-23
DE4344897B4 (de) 2005-11-17
JP3537854B2 (ja) 2004-06-14
DE4344897A1 (de) 1994-07-07
FR2700062A1 (fr) 1994-07-01

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