KR20020093351A - 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 - Google Patents
그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 Download PDFInfo
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- KR20020093351A KR20020093351A KR1020010032067A KR20010032067A KR20020093351A KR 20020093351 A KR20020093351 A KR 20020093351A KR 1020010032067 A KR1020010032067 A KR 1020010032067A KR 20010032067 A KR20010032067 A KR 20010032067A KR 20020093351 A KR20020093351 A KR 20020093351A
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- mask
- gray tone
- photosensitive material
- pattern
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 238000000034 method Methods 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000010410 layer Substances 0.000 claims description 57
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000012535 impurity Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 230000018109 developmental process Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- 229910018594 Si-Cu Inorganic materials 0.000 description 2
- 229910008332 Si-Ti Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910008465 Si—Cu Inorganic materials 0.000 description 2
- 229910006749 Si—Ti Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
- 기판 위에 다수의 박막을 순차적으로 증착하고 각각의 박막을 패터닝하여 전자소자를 제조하는 공정에서, 사진 식각을 위하여 사용되는 패터닝된 그레이톤 마스크에 있어서,노광장치에서 조사되는 빛의 조사방향에 따라 패턴화된 마스크를 통과하여 감광물질에 조사되는 광량이 서로 달라지도록 마스크에 형성된 패턴의 수직방향과 수평방향의 간격을 달리한 것을 특징으로 하는 그레이톤 마스크.
- 제1항에 있어서 상기 마스크는 수직방향과 수평방향의 패턴간의 간격을 달리한 것을 특징으로 하는 그레이톤 마스크.
- 제1항에 있어서, 상기 마스크는 수직방향과 수평방향의 패턴의 폭을 달리한 것을 특징으로 하는 그레이톤 마스크.
- 제1항에 있어서, 상기 노광장치는 스캐닝 방식의 얼라이너인 것을 특징으로 하는 그레이톤 마스크.
- 제4항에 있어서, 포지티브 감광물질을 사용하는 경우, 노광장치에서 조사되는 빛의 스캐닝 방향에 대해서 평행한 방향의 마스크 패턴 보다 수직인 방향의 마스크 패턴의 간격을 넓게 하거나 패턴의 폭을 좁게 하는 것을 특징으로 하는 그레이톤 마스크.
- 제4항에 있어서, 네가티브 감광물질을 사용하는 경우, 노광장치에서 조사되는 빛의 스캐닝 방향에 대해서 평행한 방향의 마스크 패턴 보다 수직인 방향의 마스크 패턴의 간격을 좁게 하거나 패턴의 폭을 넓게 하는 것을 특징으로 하는 그레이톤 마스크.
- 제1항에 있어서, 상기 마스크에 의하여 감광물질은 그레이톤으로 패턴화되는 것을 특징으로 하는 그레이톤 마스크.
- 액정디스플레이의 액티브 패널상에 제1마스크를 사용하여 게이트 전극을 형성하고,게이트 전극 상에 유전막, 반도체층, 불순물 반도체층, 소스/드레인 금속층을 순차로 적층하여 형성시키고,소스/드레인 금속층 위에 감광물질을 도포하고,회절노광이 가능한 그레이톤 마스크로서, 수직방향과 수평방향의 슬릿 간의 간격을 달리한 마스크를 제2마스크를 사용하여 박막트랜지스터의 채널 영역에 해당하는 게이트 전극 상부의 감광물질에 그레이톤의 노광영역과 데이타 라인과 소스전극 및 드레인 전극 영역의 감광물질에 완전노광영역을 형성하고,상기 그레이톤의 노광영역과 완전 노광영역 이외의 부분에서 1차 식각 공정으로 상기 소스.드레인 금속층, 불순물 반도체층, 반도체층을 제거하고,상기 그레이톤의 노광영역을 완전히 제거한 다음, 상기 박막트랜지스터 채널 영역의 상기 불순물 반도체층과 소스/드레인 금속층을 2차로 식각하여 소스 전극과 드레인 전극을 형성하고,보호층을 액티브 패널 전면에 증착한 후, 제3마스크를 사용하여 보호층을 패터닝하여 상기 드레인전극 상에 픽셀전극 콘택 용 홀을 형성하고,액티브 패널 전면에 픽셀전극용 도전층을 형성시키고, 제4마스크를 사용하여 상기 도전층을 패터닝하는단계를 포함하여 구성되는 액정디스플레이 제조방법.
- 제8항에 있어서, 상기 박막트랜지스터 채널 영역의 상기 불순물 반도체층, 소스/드레인 금속층의 식각은 동시에 이루어지는 것을 특징으로 하는 액정디스플레이 제조방법.
- 제8항에 있어서, 상기 박막트랜지스터 채널 영역의 상기 불순물 반도체층, 소스/드레인 금속층의 식각은 단계적으로 이루어지는 것을 특징으로 하는 액정디스플레이 제조방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0032067A KR100464204B1 (ko) | 2001-06-08 | 2001-06-08 | 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 |
US10/163,431 US6876428B2 (en) | 2001-06-08 | 2002-06-07 | Method of manufacturing a liquid crystal display panel using a gray tone mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2001-0032067A KR100464204B1 (ko) | 2001-06-08 | 2001-06-08 | 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 |
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KR20020093351A true KR20020093351A (ko) | 2002-12-16 |
KR100464204B1 KR100464204B1 (ko) | 2005-01-03 |
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KR10-2001-0032067A KR100464204B1 (ko) | 2001-06-08 | 2001-06-08 | 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 |
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US (1) | US6876428B2 (ko) |
KR (1) | KR100464204B1 (ko) |
Cited By (3)
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KR100663115B1 (ko) * | 2004-07-12 | 2007-01-02 | 호야 가부시키가이샤 | 그레이톤 마스크 및 그레이톤 마스크의 제조 방법 |
KR101009662B1 (ko) * | 2003-12-30 | 2011-01-19 | 엘지디스플레이 주식회사 | 액정표시장치의 마스크 |
KR20120062186A (ko) * | 2010-12-06 | 2012-06-14 | 두산인프라코어 주식회사 | Nc 공작기계 공구경로 파트 프로그램 수정 시스템 |
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US20080182179A1 (en) * | 2007-01-25 | 2008-07-31 | Allied Integrated Patterning Corp. | Gray tone mask and method for manufacturing the same |
KR101392848B1 (ko) * | 2007-03-28 | 2014-05-09 | 삼성디스플레이 주식회사 | 마스크 및 이의 제조 방법 |
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CN108089396A (zh) * | 2018-01-03 | 2018-05-29 | 京东方科技集团股份有限公司 | 一种单缝衍射掩膜板及制作方法、薄膜晶体管、阵列基板 |
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KR101009662B1 (ko) * | 2003-12-30 | 2011-01-19 | 엘지디스플레이 주식회사 | 액정표시장치의 마스크 |
KR100663115B1 (ko) * | 2004-07-12 | 2007-01-02 | 호야 가부시키가이샤 | 그레이톤 마스크 및 그레이톤 마스크의 제조 방법 |
KR20120062186A (ko) * | 2010-12-06 | 2012-06-14 | 두산인프라코어 주식회사 | Nc 공작기계 공구경로 파트 프로그램 수정 시스템 |
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KR100464204B1 (ko) | 2005-01-03 |
US6876428B2 (en) | 2005-04-05 |
US20020186332A1 (en) | 2002-12-12 |
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