US20230167577A1 - Refining method - Google Patents

Refining method Download PDF

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US20230167577A1
US20230167577A1 US18/147,198 US202218147198A US2023167577A1 US 20230167577 A1 US20230167577 A1 US 20230167577A1 US 202218147198 A US202218147198 A US 202218147198A US 2023167577 A1 US2023167577 A1 US 2023167577A1
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infrared radiation
wavelength
solvent
crystal form
compound
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Norimitsu TOHNAI
Daiki Kato
Yoshio Kondo
Kazunari Yamada
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NGK Insulators Ltd
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NGK Insulators Ltd
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Assigned to NGK INSULATORS, LTD. reassignment NGK INSULATORS, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TOHNAI, NORIMITSU, KATO, DAIKI, KONDO, YOSHIO, YAMADA, KAZUNARI
Publication of US20230167577A1 publication Critical patent/US20230167577A1/en
Priority to US19/050,247 priority Critical patent/US20250179038A1/en
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D277/00—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings
    • C07D277/02—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings not condensed with other rings
    • C07D277/20—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
    • C07D277/32—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D277/56—Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/005—Selection of auxiliary, e.g. for control of crystallisation nuclei, of crystal growth, of adherence to walls; Arrangements for introduction thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0063—Control or regulation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C227/00—Preparation of compounds containing amino and carboxyl groups bound to the same carbon skeleton
    • C07C227/38—Separation; Purification; Stabilisation; Use of additives
    • C07C227/40—Separation; Purification
    • C07C227/42—Crystallisation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C51/00—Preparation of carboxylic acids or their salts, halides or anhydrides
    • C07C51/42—Separation; Purification; Stabilisation; Use of additives
    • C07C51/43—Separation; Purification; Stabilisation; Use of additives by change of the physical state, e.g. crystallisation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D223/00—Heterocyclic compounds containing seven-membered rings having one nitrogen atom as the only ring hetero atom
    • C07D223/14—Heterocyclic compounds containing seven-membered rings having one nitrogen atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D223/18—Dibenzazepines; Hydrogenated dibenzazepines
    • C07D223/22—Dibenz [b, f] azepines; Hydrogenated dibenz [b, f] azepines
    • C07D223/24—Dibenz [b, f] azepines; Hydrogenated dibenz [b, f] azepines with hydrocarbon radicals, substituted by nitrogen atoms, attached to the ring nitrogen atom
    • C07D223/26—Dibenz [b, f] azepines; Hydrogenated dibenz [b, f] azepines with hydrocarbon radicals, substituted by nitrogen atoms, attached to the ring nitrogen atom having a double bond between positions 10 and 11
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C30B7/06—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0018—Evaporation of components of the mixture to be separated
    • B01D9/0031—Evaporation of components of the mixture to be separated by heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0077—Screening for crystallisation conditions or for crystal forms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
    • C07B2200/00—Indexing scheme relating to specific properties of organic compounds
    • C07B2200/13—Crystalline forms, e.g. polymorphs
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/06—Systems containing only non-condensed rings with a five-membered ring
    • C07C2601/08—Systems containing only non-condensed rings with a five-membered ring the ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D277/00—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings
    • C07D277/02—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings not condensed with other rings
    • C07D277/20—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
    • C07D277/22—Heterocyclic compounds containing 1,3-thiazole or hydrogenated 1,3-thiazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms
    • C07D277/30—Radicals substituted by carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals

Definitions

  • the present invention relates to a refining method.
  • Patent Literature 1 discloses a method for refining an organic compound using a laser beam.
  • Patent Literature 1 to selectively produce a metastable substance from a solution of a substance containing a stable form and a metastable form as crystal forms, metastable crystals are selectively produced by emitting a laser beam into the solution to generate bubbles and form metastable crystal nuclei.
  • Patent Literature 1 the laser beam is emitted to generate bubbles in the solution, and no attention is paid to light of an infrared absorption wavelength.
  • the present invention has been made to address such an issue and mainly aims to obtain a specific crystal form from a solution of a compound dissolved in a solvent.
  • a refining method is a refining method for crystallizing a compound with at least one crystal form, including: setting, as a target wavelength and a target concentration, a specific infrared wavelength and a specific concentration at which a specific crystal form precipitates from a solution of the compound dissolved in a solvent, and using an infrared radiation apparatus capable of emitting infrared radiation including the target wavelength to evaporate the solvent and precipitate the specific crystal form while irradiating a solution of the compound dissolved in the solvent at the target concentration with infrared radiation including the target wavelength.
  • This refining method can precipitate a specific crystal form from a solution of a compound dissolved in a solvent by adjusting the solvent for dissolving the compound, the infrared radiation emitted to the solution, and the concentration of the compound in the solution.
  • a compound with a plurality of crystal forms generally has a dissolution rate depending on the type of solvent. The dissolution rate is probably related to the ease of precipitation of crystals. Furthermore, a crystal form with higher infrared absorptivity probably has more active thermal vibrations and fewer crystal nuclei. Furthermore, the crystal form precipitated from the solution also depends on the concentration of the compound in the solution. It is therefore thought that the suitable conditions for precipitation of a specific crystal form depend on the solvent for dissolving the compound, the infrared radiation emitted to the solution, and the concentration of the compound in the solution.
  • FIG. 1 is a perspective view of a refining apparatus 1 (partially in cross section).
  • FIG. 2 is a partial bottom view of an infrared heater 10.
  • FIG. 3 is a graph of an infrared absorption spectrum of febuxostat.
  • FIG. 4 is a graph of an infrared absorption spectrum of loxoprofen.
  • FIG. 5 is a graph of an infrared absorption spectrum of carbamazepine.
  • a refining method is a refining method for crystallizing a compound with at least one crystal form, including: setting, as a target wavelength and a target concentration, a specific infrared wavelength and a specific concentration at which a specific crystal form precipitates from a solution of the compound dissolved in a solvent, and using an infrared radiation apparatus capable of emitting infrared radiation including the target wavelength to evaporate the solvent and precipitate the specific crystal form while irradiating a solution of the compound dissolved in the solvent at the target concentration with infrared radiation including the target wavelength.
  • the compound may have a plurality of crystal forms or a single crystal form.
  • a specific crystal form is precipitated by evaporating a solvent from a solution of a raw material of an organic compound X with two crystal forms a1 and a2 dissolved in the solvent.
  • the specific crystal form is precipitated on the basis of the results of preliminary experiments.
  • a crystal form a1 is precipitated when a solution of the raw material of the organic compound X dissolved in a solvent p1 at a specific concentration C1 [mg/mL] is irradiated with infrared radiation including a wavelength ⁇ 1 [ ⁇ m] (for example, infrared radiation having a peak at the wavelength ⁇ 1) to evaporate the solvent p1.
  • the solvent p1 used in the second preliminary experiment infrared radiation including the wavelength ⁇ 1 [ ⁇ m] , and the concentration C2 of the compound in the solution [mg/mL] are employed.
  • infrared radiation including the wavelength ⁇ 1 [ ⁇ m]
  • concentration C2 of the compound in the solution [mg/mL]
  • different crystal forms are prepared by changing the concentration of the compound in the solution with the same solvent at the same wavelength in this embodiment, the present invention is not limited to the embodiment. Different crystal forms may be prepared by appropriately changing the combination of solvent, wavelength, and compound concentration.
  • different crystal forms may be prepared by changing the solvent at the same wavelength and at the same compound concentration.
  • different crystal forms may be prepared by changing the wavelength with the same solvent at the same compound concentration.
  • the wavelength ⁇ 1 [ ⁇ m] is preferably determined on the basis of an infrared absorption spectrum of a crystal form and the dissolution rate of a raw material in a solvent. Crystal forms often have different infrared absorption spectra and often have different absorptivities at a given wavelength. It is thought that when a solution is irradiated with infrared radiation including a certain wavelength, a crystal form with a higher absorptivity at the wavelength has more active thermal vibration than crystal forms with a lower absorptivity, has fewer crystal nuclei, and is less likely to precipitate.
  • the wavelength ⁇ 1 [ ⁇ m] is preferably determined on the basis of an infrared absorption spectrum of a crystal form and the dissolution rate of a raw material in a solvent.
  • the infrared radiation including the wavelength ⁇ 1 [ ⁇ m] may be infrared radiation having a peak at the wavelength ⁇ 1 [ ⁇ m] .
  • a crystal form c is precipitated by evaporating a solvent q from a solution of an organic compound Y with the crystal form c dissolved in the solvent q. It is assumed that, in a preliminary experiment, the crystal form c precipitates when the solvent q is evaporated while the solution of the organic compound Y dissolved in the solvent q at a concentration c1 [mg/mL] is irradiated with infrared radiation including a wavelength ⁇ [ ⁇ m].
  • the crystal form c does not precipitate and is amorphous when the solvent q is evaporated while the solution of the organic compound Y dissolved in the solvent q at a concentration c2 [mg/mL] is irradiated with infrared radiation including the wavelength ⁇ [ ⁇ m].
  • the solvent q may be evaporated while the solution of the organic compound Y dissolved in the solvent q at a concentration c1 [mg/mL] is irradiated with infrared radiation including the wavelength ⁇ [ ⁇ m].
  • the infrared radiation including the wavelength ⁇ [ ⁇ m] may be infrared radiation having a peak at the wavelength ⁇ [ ⁇ m] .
  • Examples of compounds that can be refined by the refining method according to the present embodiment include, but are not limited to, febuxostat, terfenadine, indomethacin, ibuprofen, loxoprofen, caffeine, diclofenac, and carbamazepine.
  • Examples of the solvent for dissolving a raw material of a compound include, but are not limited to, alcohol solvents, such as methanol, ethanol, 1-propanol, 2-propanol (isopropanol (IPA)), 1-butanol, 2-butanol, isobutanol, and tert-butanol; nitrile solvents, such as acetonitrile and propionitrile; ether solvents, such as diethyl ether and tetrahydrofuran; ketone solvents, such as acetone and methyl ethyl ketone; halogen solvents, such as dichloromethane and chloroform; ester solvents, such as ethyl acetate and methyl acetate; aliphatic hydrocarbon solvents, such as pentane, hexane, heptane, octane, and cyclohexane; aromatic hydrocarbon solvents, such as benzene, tol
  • any infrared radiation apparatus capable of emitting infrared radiation including a wavelength ⁇ [ ⁇ m] can be used.
  • the infrared radiation apparatus may include a sheet radiator and a planar heater serving as a heat source.
  • the infrared radiation apparatus is preferably an infrared radiation apparatus capable of emitting infrared radiation having a peak at the wavelength ⁇ [ ⁇ m], particularly infrared radiation having a peak at the wavelength ⁇ [ ⁇ m] and having a narrow half-width.
  • Examples of such an infrared radiation apparatus include metamaterial emitters and infrared radiation apparatuses with a filter.
  • Examples of the metamaterial emitters include emitters of a Metal-Insulator-Metal (MIM) type, a microcavity type, a meta-atom type, and a multilayer type.
  • MIM Metal-Insulator-Metal
  • Examples of the MIM type include those described in Reference 1 (JSME TED Newsletter, No. 74, pp. 7-10, 2014). The MIM type is described in detail later.
  • Examples of the microcavity type and the meta-atom type include those described in Reference 2 (JSME TED Newsletter, No. 74, pp. 2-6, 2014).
  • Examples of the multilayer type include those described in Reference 3 (ACS Cent. Sci., Vol. 5, pp. 319-326, 2019).
  • Examples of the infrared radiation apparatuses with a filter include infrared heaters described in Japanese Patent No. 6442355.
  • FIG. 1 is a perspective view of a refining apparatus 1 partially in cross section.
  • FIG. 2 is a partial bottom view of an infrared heater 10 .
  • the horizontal direction, the front-back direction, and the vertical direction are as illustrated in FIG. 1 .
  • the refining apparatus 1 is an apparatus for precipitating a specific crystal form from a solution 22 in a flat laboratory dish 20 using the infrared heater 10 .
  • the solution 22 contains a compound with a plurality of crystal forms dissolved in a solvent.
  • the infrared heater 10 is an example of a metamaterial emitter of the MIM type and includes a heater body 11 , a structure 30 , and a casing 70 .
  • the infrared heater 10 emits infrared radiation to the solution 22 in the flat laboratory dish 20 located under the infrared heater 10 .
  • the heater body 11 is configured as a planar heater and includes a heating element 12 in which a linear member is bent in a zigzag, and a protective member 13 , which is an insulator in contact with and surrounding the heating element 12 .
  • the material of the heating element 12 is, for example, W, Mo, Ta, an Fe—Cr—Al alloy, or a Ni—Cr alloy.
  • the material of the protective member 13 is, for example, an insulating resin, such as a polyimide, or a ceramic.
  • the heater body 11 is located inside the casing 70 . Both ends of the heating element 12 are coupled to a pair of input terminals (not shown) attached to the casing 70 . Electric power can be supplied to the heating element 12 from the outside through the pair of input terminals.
  • the heater body 11 may be a planar heater with a ribbon-like heating element wound around an insulator.
  • the structure 30 is a sheet radiator provided under the heating element 12 .
  • the structure 30 includes a first conductor layer 31 (a metal pattern), a dielectric layer 34 , a second conductor layer 35 (a metal substrate), and a supporting substrate 37 stacked in this order from the outside to the inside under the infrared heater 10 .
  • the structure 30 is located so as to close an opening in the lower portion of the casing 70 .
  • the first conductor layer 31 is configured as a metal pattern with a periodic structure in which metal electrodes 32 of the same shape and size are arranged at regular intervals on the dielectric layer 34 . More specifically, the first conductor layer 31 is configured as a metal pattern in which a plurality of tetragonal metal electrodes 32 are arranged at regular intervals D 1 in the horizontal direction and at regular intervals D 2 in the front-back direction on the dielectric layer 34 .
  • the metal electrodes 32 have a shape with a thickness (a vertical height) smaller than a lateral width W 1 (a width in the horizontal direction) and a longitudinal width W 2 (a width in the front-back direction).
  • the material of the metal electrodes 32 is, for example, gold or aluminum (Al).
  • the metal electrodes 32 are bonded to the dielectric layer 34 via an adhesive layer (not shown).
  • the material of the adhesive layer is, for example, chromium (Cr), titanium (Ti), or ruthenium (Ru).
  • the dielectric layer 34 is a flat member with an upper surface bonded to the second conductor layer 35 .
  • the dielectric layer 34 is located between the first conductor layer 31 and the second conductor layer 35 .
  • a portion of the lower surface of the dielectric layer 34 on which the metal electrodes 32 are not located is a radiation surface 38 for emitting infrared radiation to an object.
  • the material of the dielectric layer 34 is, for example, alumina (Al 2 O 3 ) or silica (SiO 2 ) .
  • the second conductor layer 35 is a metal sheet with an upper surface bonded to the supporting substrate 37 via an adhesive layer (not shown).
  • the material of the second conductor layer 35 may be the same as the material of the first conductor layer 31 .
  • the material of the adhesive layer is, for example, chromium (Cr), titanium (Ti), or ruthenium (Ru).
  • the supporting substrate 37 is a flat member fixed inside the casing 70 with a fixing component or the like (not shown) and supports the first conductor layer 31 , the dielectric layer 34 , and the second conductor layer 35 .
  • the material of the supporting substrate 37 is, for example, a material, such as a Si wafer or glass, that can easily maintain a smooth surface, has high heat resistance, and has low thermal warping.
  • the supporting substrate 37 may be in contact with the lower surface of the heater body 11 or may be separated from the lower surface with a space therebetween. When the supporting substrate 37 is in contact with the heater body 11 , they may be bonded together.
  • the structure 30 functions as a metamaterial emitter with the characteristics of selectively emitting infrared radiation of a specific wavelength. The characteristics probably result from a resonance phenomenon explained by magnetic polariton.
  • the magnetic polariton is a resonance phenomenon in which a confinement effect of a strong electromagnetic field can be produced in a dielectric (the dielectric layer 34 ) between two upper and lower conductors (the first conductor layer 31 and the second conductor layer 35 ).
  • a portion of the dielectric layer 34 between the second conductor layer 35 and the metal electrodes 32 serves as an infrared radiation source.
  • Infrared radiation emitted from the radiation source goes around the metal electrodes 32 and is emitted to the surrounding environment from a portion of the dielectric layer 34 on which the metal electrodes 32 are not located (that is, from the radiation surface 38 ).
  • the materials of the first conductor layer 31 , the dielectric layer 34 , and the second conductor layer 35 and the shape and periodic structure of the first conductor layer 31 can be adjusted to regulate the resonance wavelength.
  • infrared radiation emitted from the radiation surface 38 of the structure 30 characteristically has high emissivity at a specific wavelength.
  • the material, shape, periodic structure, and the like are adjusted so that the structure 30 characteristically emits from the radiation surface 38 infrared radiation having a maximum peak with a half-width of 2.0 ⁇ m or less (preferably 1.5 ⁇ m or less, more preferably 1.0 ⁇ m or less) and with an emissivity of 0.7 or more (preferably 0.8 or more) in the wavelength range of 0.9 to 25 ⁇ m (preferably 2.5 to 25 ⁇ m (4000 to 400 cm -1 ) ).
  • the structure 30 characteristically emits infrared radiation having a sharp maximum peak with a relatively small half-width and a relatively high emissivity.
  • the half-width is, for example, but not limited to, preferably 2.0 ⁇ m or less, more preferably 1.5 ⁇ m or less, still more preferably 1.0 ⁇ m or less.
  • the casing 70 has an approximately rectangular parallelepiped shape with a space therein and with an open bottom surface.
  • the heater body 11 and the structure 30 are located in the space inside the casing 70 .
  • the casing 70 is formed of a metal (for example, stainless steel or aluminum) to reflect infrared radiation emitted from the heating element 12 .
  • the flat laboratory dish 20 containing the solution 22 is placed under the first conductor layer 31 of the infrared heater 10 .
  • the solution 22 contains the organic compound X dissolved in the solvent p1 at the concentration C1 [mg/mL].
  • electric power is supplied from a power supply (not shown) through an input terminal to both ends of the heating element 12 .
  • the electric power is supplied so that the temperature of the heating element 12 reaches a preset temperature (for example, but not limited to, several hundred degrees Celsius).
  • the heating element 12 heated to the predetermined temperature transfers energy to the surroundings by at least one of three heat transfer modes of conduction, convection, and radiation and heats the structure 30 . Consequently, the structure 30 is heated to a predetermined temperature, becomes a secondary radiator, and emits infrared radiation.
  • a predetermined wavelength ⁇ 1 [ ⁇ m] is set as a target wavelength, and infrared radiation having a peak at the wavelength ⁇ 1 [ ⁇ m] is set to be emitted from the structure 30 .
  • the intervals D 1 and D 2 of the metal electrodes 32 of the structure 30 , the widths W 1 and W 2 of the metal electrodes 32 , and the periods ⁇ 1 and ⁇ 2 of the metal pattern are set so that infrared radiation emitted from the structure 30 has a peak at a predetermined wavelength ⁇ 1 [ ⁇ m] .
  • Irradiation of the solution 22 in the flat laboratory dish 20 with infrared radiation having a peak at the wavelength ⁇ 1 [ ⁇ m] evaporates the solvent p1 of the solution 22 with the passage of time and finally selectively precipitates crystals of the organic compound X with the crystal form a1.
  • the infrared heater 10 is designed to mainly emit infrared radiation of a target wavelength, it is difficult to remove all radiation other than the target wavelength from the infrared radiation of the structure 30 , and convective heat dissipation from components of the heater to the surroundings will occur in the atmosphere. To form an actual process, therefore, various considerations should be given to the shape of the apparatus and the like so that such associated heat flow does not excessively increase the temperature of raw materials and the like.
  • the refining method according to the present embodiment described in detail above can precipitate a specific crystal form from a solution of a compound dissolved in a solvent by adjusting the solvent for dissolving the compound, infrared radiation emitted to the solution, and the concentration of the compound in the solution. Furthermore, the use of the infrared heater 10 of the MIM type allows a peak wavelength of emitted infrared radiation to be designed to accurately match a target wavelength.
  • the first conductor layer 31 of the infrared heater 10 is configured as a metal pattern with a periodic structure in which the metal electrodes 32 of the same shape and size are arranged at regular intervals.
  • the infrared heater 10 emits infrared radiation having a peak wavelength that changes with the lateral width W 1 and the longitudinal width W 2 of the metal electrodes 32 .
  • the lateral width W 1 and the longitudinal width W 2 of the metal electrodes 32 can be accurate as designed, for example, by drawing and lift-off using a well-known electron-beam lithography system.
  • a peak wavelength of infrared radiation emitted from the infrared heater 10 can be relatively easily and accurately adjusted to a target wavelength.
  • the metal electrodes 32 are tetragonal in these embodiments but may be circular. In circular metal electrodes 32 , the diameter corresponds to the lateral width W 1 and the longitudinal width W 2 .
  • FIG. 3 is a graph of an infrared absorption spectrum of each crystal form.
  • Table 1 shows the absorptivity of each crystal form at wavelengths of 3.7 and 6.7 ⁇ m in the infrared absorption spectra.
  • a test sample was prepared by weighing 25 mg of febuxostat (product code F0847, Tokyo Chemical Industry Co., Ltd.) into a flat laboratory dish ( ⁇ 32 mm ⁇ 16 mm), adding 1 mL of isopropanol (IPA), heating the febuxostat on a hot plate at 80° C. for 2 minutes, and dissolving the febuxostat with slight stirring (the concentration of febuxostat in the test sample was 25 [mg/mL] ) .
  • febuxostat product code F0847, Tokyo Chemical Industry Co., Ltd.
  • the test sample was irradiated with infrared radiation including a wavelength of 6.7 ⁇ m (infrared radiation having a peak at a wavelength of 6.7 ⁇ m) (radiation source temperature: 400° C.) to evaporate the solvent and precipitate crystals.
  • the temperature of the solution was 40° C.
  • a heating plate was not used.
  • Infrared radiation was emitted from the infrared heater 10 of the MIM type.
  • the first conductor layer 31 (a layer having circular metal electrodes 32 ) made of Au had a height h of 50 nm.
  • the dielectric layer 34 made of Al 2 O 3 had a thickness d of 190 nm.
  • the second conductor layer 35 made of Au had a height f of 100 nm.
  • the circular metal electrodes 32 had a diameter (corresponding to W 1 and W 2 ) of 2.16 ⁇ m.
  • the intervals between the metal electrodes (corresponding to D 1 and D 2 ) were 1.84 ⁇ m.
  • the period (corresponding to ⁇ 1 and ⁇ 2) was 4.0 ⁇ m.
  • Infrared radiation having a peak at a wavelength of 6.7 ⁇ m (half-width: 0.5 ⁇ m) was emitted.
  • the crystal form of the precipitated crystals was identified as F2 by XRD analysis.
  • the XRD analysis was performed with an X-ray diffractometer (product name: Ultima IV, Rigaku).
  • Crystals were precipitated in the same manner as in Example 1 except that the concentration of febuxostat in the test sample was changed from 25 mg/mL to 50 mg/mL.
  • the crystal form of the precipitated crystals was identified as F1 by XRD analysis.
  • Loxoprofen is known to have a plurality of crystal forms F1 and F2.
  • FIG. 4 is a graph of an infrared absorption spectrum of each crystal form. Table 1 shows the absorptivity of each crystal form at wavelengths of 3.7 and 6.7 ⁇ m in the infrared absorption spectra.
  • a test sample was prepared by weighing 5 mg of loxoprofen (product code L0244, Tokyo Chemical Industry Co., Ltd.) into a flat laboratory dish ( ⁇ 32 mm ⁇ 16 mm), adding 1 mL of isopropanol (IPA), heating the loxoprofen on a hot plate at 80° C. for 1 minute, and dissolving the loxoprofen with slight stirring (the concentration of loxoprofen in the test sample was 5 mg/mL).
  • the temperature of the solution was adjusted to 80° C. while the test sample was irradiated with infrared radiation including a wavelength of 6.7 ⁇ m, and this state was maintained to evaporate the solvent and precipitate crystals.
  • the temperature of the solution was adjusted by placing the test sample on a heating plate with a Peltier element and using the temperature control function of the heating plate.
  • the crystal form of the precipitated crystals was identified as F1 by XRD analysis.
  • Crystals were precipitated in the same manner as in Example 3 except that the concentration of loxoprofen in the test sample was changed from 5 mg/mL to 100 mg/mL.
  • the crystal form of the precipitated crystals was identified as F2 by XRD analysis.
  • Carbamazepine is known to have a plurality of crystal forms F1, F2, F3, and F4.
  • FIG. 5 is a graph of an infrared absorption spectrum of each crystal form. Table 1 shows the absorptivity of each crystal form at wavelengths of 3.0 and 6.7 ⁇ m in the infrared absorption spectra.
  • a test sample was prepared by weighing 25 mg of carbamazepine (product code C1095, Tokyo Chemical Industry Co., Ltd.) into a flat laboratory dish ( ⁇ 32 mm ⁇ 16 mm), adding 1 mL of isopropanol (IPA), heating the carbamazepine on a hot plate at 80° C. for 1 minute, and dissolving the carbamazepine with slight stirring (the concentration of carbamazepine in the test sample was 25 mg/mL). The temperature of the solution was adjusted to 55° C. while the test sample was irradiated with infrared radiation including a wavelength of 3.0 ⁇ m, and this state was maintained to evaporate the solvent and precipitate crystals. A heating plate was not used. The crystal form of the precipitated crystals was identified as F2 by XRD analysis.
  • Example 5 the first conductor layer 31 of the infrared heater 10 had a height h of 49 nm.
  • the dielectric layer 34 had a thickness d of 44 nm.
  • the second conductor layer 35 had a height f of 200 nm.
  • the circular metal electrodes 32 had a diameter (corresponding to W 1 and W 2 ) of 0.54 ⁇ m.
  • the intervals between the metal electrodes (corresponding to D 1 and D 2 ) were 0.46 ⁇ m.
  • the period (corresponding to ⁇ 1 and ⁇ 2) was 1.0 ⁇ m.
  • Infrared radiation having a peak at a wavelength of 3.0 ⁇ m (half-width: 0.5 ⁇ m) was emitted.
  • Crystals were precipitated in the same manner as in Example 5 except that the concentration of carbamazepine in the test sample was changed from 25 mg/mL to 120 mg/mL.
  • the crystal form of the precipitated crystals was identified as F3 by XRD analysis.
  • Examples 1 to 6 show that the solvent, the wavelength, and the concentration of the compound in the solution could be appropriately combined to precipitate a compound with a different crystal form. From another perspective, even with the same solvent and wavelength, the compound concentration could be changed to precipitate a compound with a different crystal form.
  • Examples 1 and 2 show that, to precipitate febuxostat of the crystal form F1, as described in Example 1, IPA may be used as a solvent, a sample may be prepared at a compound concentration of 25 mg/mL, and infrared radiation with a peak wavelength of 6.7 ⁇ m may be emitted.
  • IPA may be used as a solvent, a sample may be prepared at a compound concentration of 50 mg/mL, and infrared radiation with a peak wavelength of 6.7 ⁇ m may be emitted.
  • Examples 3 and 4 show that, to precipitate loxoprofen of the crystal form F1, as described in Example 3, IPA may be used as a solvent, a sample may be prepared at a compound concentration of 5 mg/mL, and infrared radiation with a peak wavelength of 6.7 ⁇ m may be emitted.
  • IPA may be used as a solvent, a sample may be prepared at a compound concentration of 100 mg/mL, and infrared radiation with a peak wavelength of 6.7 ⁇ m may be emitted.
  • Examples 5 and 6 show that, to precipitate carbamazepine of the crystal form F2, as described in Example 5, IPA may be used as a solvent, a sample may be prepared at a compound concentration of 25 mg/mL, and infrared radiation with a peak wavelength of 3.0 ⁇ m may be emitted.
  • IPA may be used as a solvent, a sample may be prepared at a compound concentration of 120 mg/mL, and infrared radiation with a peak wavelength of 3.0 ⁇ m may be emitted.

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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
KR102485717B1 (ko) * 2017-09-01 2023-01-09 삼성전자주식회사 공기조화기
WO2025062998A1 (ja) * 2023-09-20 2025-03-27 日本碍子株式会社 結晶化装置および結晶化方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58181858A (ja) 1982-04-19 1983-10-24 Taiyo Sanso Kk ステンレス鋼の鍍金前処理法
GB2122602B (en) * 1982-06-07 1985-06-05 Hisamitsu Pharmaceutical Co Novel 2 3-dihydro-indene derivatives
JPH0744154B2 (ja) * 1987-12-16 1995-05-15 株式会社豊田中央研究所 光照射型低温ｍｏｃｖｄ方法および装置
JP3805533B2 (ja) * 1998-07-21 2006-08-02 東京瓦斯株式会社 同位体分離方法
CA2376198A1 (en) * 1999-07-06 2001-01-11 Allan S. Myerson Method for using laser light to control crystal form
RU2160795C1 (ru) * 1999-07-07 2000-12-20 Уральский государственный технический университет Способ получения высокочистых веществ
JP2001247526A (ja) * 2000-03-06 2001-09-11 Toyobo Co Ltd 近赤外線吸収化合組成物および近赤外線吸収フィルター
EP1172646A1 (en) * 2000-07-13 2002-01-16 Universiteit Leiden Screening crystallisation conditions of organic compounds
AU2003251288A1 (en) * 2002-03-21 2003-11-03 Berkshire Laboratories, Inc. Methods for controlling crystal growth, crystallization, structures and phases in materials and systems
JP2003319800A (ja) * 2002-05-07 2003-11-11 Itochu Seito Kk 砂糖の製造方法
JP2004226277A (ja) * 2003-01-23 2004-08-12 Bios Ikagaku Kenkyusho:Kk 生体物質および化学物質の光学的測定方法および光学的測定装置
JP4099762B2 (ja) * 2003-03-10 2008-06-11 株式会社石井鐵工所 酒石酸塩の析出分離方法及びその方法を用いて得られた赤外線照射飲料
EP1948655A1 (en) * 2005-10-03 2008-07-30 Mallinckrodt, Inc. Process for preparing zolpidem hemitartrate and tartrate polymorphs
CN100417750C (zh) * 2006-05-23 2008-09-10 青岛大学 溶液法晶体快速生长装置
EP1887004A1 (en) * 2006-08-07 2008-02-13 Palau Pharma, S.A. Crystalline forms of (1R,2R)-7-Chloro-3-[2-(2,4-difluorophenyl)-2-hydroxy-1-methyl-3-(1H-1,2,4-triazol-1-yl)propyl]quinazolin-4(3H)-one
CN101573114A (zh) * 2006-12-28 2009-11-04 弗·哈夫曼-拉罗切有限公司 结晶形式glyt1
JP2010075838A (ja) * 2008-09-25 2010-04-08 Itaken:Kk 気泡発生ノズル
ES2395381T3 (es) * 2009-06-10 2013-02-12 Teva Pharmaceutical Industries Ltd. Formas cristalinas de Febuxostat
CN102970989A (zh) * 2010-07-12 2013-03-13 永信药品工业股份有限公司 曲马多的双氯芬酸盐
CN102267957B (zh) * 2011-08-24 2013-04-24 山东齐都药业有限公司 非布司他a晶型的制备方法
JP5848621B2 (ja) * 2012-01-25 2016-01-27 浜松ホトニクス株式会社 薬物評価方法及び薬物評価装置
JP2014189462A (ja) 2013-03-27 2014-10-06 Osaka Univ 結晶製造方法、準安定形結晶、医薬の製造方法および医薬
JP2014214299A (ja) * 2013-04-30 2014-11-17 旭硝子株式会社 近赤外線吸収粒子、その製造方法、分散液およびその物品
CN103333064B (zh) * 2013-07-17 2014-04-23 珠海金鸿药业股份有限公司 洛索洛芬钠化合物及其药物组合物
WO2015053297A1 (ja) * 2013-10-08 2015-04-16 Ｍｅｉｊｉ Ｓｅｉｋａファルマ株式会社 ジアザビシクロオクタン誘導体の結晶とその製造法
JP6270402B2 (ja) * 2013-10-17 2018-01-31 株式会社アスプ 気体含有液生成装置および気体含有液噴射機構
JP2017061582A (ja) * 2014-02-07 2017-03-30 国立研究開発法人産業技術総合研究所 蛍光体微粒子の製造方法、蛍光体薄膜、波長変換膜、波長変換デバイス及び太陽電池
WO2015140062A1 (de) * 2014-03-19 2015-09-24 Basf Se Verfahren und vorrichtung zum abtrennen eines stoffes aus einer lösung
CN107428969A (zh) * 2015-02-20 2017-12-01 株式会社可乐丽 离子交换膜
US20160289173A1 (en) * 2015-04-02 2016-10-06 Massachusetts Institute Of Technology Devices and methods for crystallizing a compound
GB2548342B (en) * 2016-03-10 2021-04-07 Rotam Agrochem Int Co Ltd A novel form of amicarbazone, a process for its preparation and use of the same
CN107216339B (zh) * 2016-03-22 2021-05-04 中国科学院上海药物研究所 一种dppiv抑制剂马来酸盐的多晶型及其制备方法
CN105753733B (zh) * 2016-04-15 2019-06-18 苏州晶云药物科技股份有限公司 Ahu377的晶型及其制备方法与用途
JP6285619B1 (ja) * 2016-08-19 2018-02-28 日本碍子株式会社 有機化合物の精製方法
CN110799264A (zh) * 2017-07-05 2020-02-14 日本碍子株式会社 红外线处理装置
CN108530382A (zh) * 2018-03-20 2018-09-14 华南理工大学 一种非布索坦川芎嗪共晶体及其制备方法和用途

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