US20050069005A1 - Monolithic semiconductor laser and method of manufacturing the same - Google Patents

Monolithic semiconductor laser and method of manufacturing the same Download PDF

Info

Publication number
US20050069005A1
US20050069005A1 US10/898,196 US89819604A US2005069005A1 US 20050069005 A1 US20050069005 A1 US 20050069005A1 US 89819604 A US89819604 A US 89819604A US 2005069005 A1 US2005069005 A1 US 2005069005A1
Authority
US
United States
Prior art keywords
layer
semiconductor
layers
active layer
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/898,196
Other languages
English (en)
Inventor
Takehiro Nishida
Motoharu Miyashita
Tsutomu Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Assigned to MITSUBISHI DENKI KABUSHIKI KAISHA reassignment MITSUBISHI DENKI KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIYASHITA, MOTOHARU, NISHIDA, TAKEHIRO, YAMAGUCHI, TSUTOMU
Publication of US20050069005A1 publication Critical patent/US20050069005A1/en
Priority to US11/878,027 priority Critical patent/US7602830B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

  • the present invention relates to a monolithic semiconductor laser and a method of manufacturing the same, and more particularly, to a monolithic semiconductor laser comprising a stripe structure (current confining structure) and a method of manufacturing the same.
  • An information reader/writer apparatus or the like for DVDs and CDs uses a monolithic semiconductor laser in which the single substrate seats multiple of semiconductor lasers which have different emission wavelengths.
  • the single substrate seats a semiconductor laser whose emission wavelength is 650 nm and a semiconductor laser whose emission wavelength is 780 nm, for example.
  • the location of the other one of the semiconductor lasers is determined using alignment marks which are provided on the substrate, to thereby fabricate the monolithic semiconductor laser (K. Nemoto and K. Miura: “A Laser Coupler for DVD/CD Playback Using a Monolithic-integrated Two-wavelength Laser Diode,” JSAP International, No. 3, pp. 9-14 (January 2001)).
  • a monolithic semiconductor laser and other components such as a lens are assembled together and an optical system is accordingly obtained.
  • the distance between emission points of two semiconductor lasers is dependent upon the accuracy of aligning locations as described above. Between different production batches therefore, the distance between the emission points, namely relative locations of stripe structures, is different and it is therefore necessary to finely adjust the locations of the lens, etc.
  • the fine adjustment makes the assembling step complex and increases a manufacturing cost.
  • An object of the present invention is to provide a monolithic semiconductor laser in which relative locations of stripe structures, namely the distance between emission points, remain constant and a method of manufacturing the same.
  • the present invention is directed to a monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer.
  • the first and second active layers are made of different semiconductor materials from each other.
  • the first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.
  • the gap between stripe structures (current confining structures) of plural semiconductor lasers i.e., the distance between emission points is always approximately constant.
  • semiconductor materials which are the same in terms of material and/or composition.
  • semiconductor materials herein referred to are semiconductor materials which are different in terms of material and/or composition.
  • FIGS. 1A-1G show cross sectional views of the steps of manufacturing the monolithic semiconductor laser according to the embodiment 1 of the present invention
  • FIGS. 1H and 1I show cross sectional views of the steps of manufacturing other monolithic semiconductor laser according to the embodiment 1 of the present invention
  • FIGS. 2A-2C show cross sectional views of the steps of manufacturing the monolithic semiconductor laser according to the embodiment 2 of the present invention
  • FIGS. 3A-3C show cross sectional views of the steps of manufacturing the monolithic semiconductor laser according to the embodiment 3 of the present invention.
  • FIGS. 4A-4C show cross sectional views of the steps of manufacturing the monolithic semiconductor laser according to the embodiment 4 of the present invention.
  • FIGS. 1A-1G are cross sectional views of steps of manufacturing a monolithic semiconductor laser according to this embodiment which is generally denoted at 100 .
  • the monolithic semiconductor laser 100 has a first semiconductor laser whose emission wavelength is 780 nm and a second semiconductor laser whose emission wavelength is 650 nm (See FIG. 1G ).
  • steps 1 through 7 The steps of manufacturing the monolithic semiconductor laser 100 will now be described with reference to FIGS. 1A-1G . These steps include the following steps 1 through 7 .
  • Step 1 As shown in FIG. 1A , a GaAs substrate 1 of the n-type is prepared. On the GaAs substrate 1 , an n-AlGaInP lower clad layer 2 , an AlGaAs active layer (having the emission wavelength of 780 nm) 3 and a p-AlGaInP upper clad layer 4 are then stacked one atop the other. A GaInP etching stopper layer 5 is inserted in the p-AlGaInP upper clad layer 4 . Further, on the p-AlGaInP upper clad layer 4 , a p-GaAs cap layer 6 is formed.
  • the AlGaAs active layer 3 has such a composition which provides the emission wavelength of 780 nm.
  • the respective semiconductor layers 2 through 6 are formed using an MOCVD method for instance.
  • Step 2 As shown in FIG. 1B , by means of a photolithographic technique and an etching technique, thus formed semiconductor layers 2 through 6 are removed except for within the area where the first semiconductor laser is to be formed.
  • Step 3 As shown in FIG. 1C , by an MOCVD method for instance, semiconductor layers for forming the second semiconductor laser are stacked one atop the other. These semiconductor layers have the same compositions, the same impurity concentrations and the same film thicknesses as those of the semiconductor layers which are used to form the first semiconductor laser, with an exception of an AlGaInP active layer 13 .
  • the AlGaInP active layer 13 has such a composition which provides the emission wavelength of 650 nm.
  • Step 4 As shown in FIG. 1D , by means of a photolithographic technique and an etching technique, thus formed semiconductor layers 2 through 6 are removed except for within the area where the second semiconductor laser is to be formed, which is similar to the step 2 ( FIG. 1B ). This results in a stacked structure as that shown in FIG. 1D .
  • Step 5 As shown in FIG. 1E , photoresist layers 7 are formed and patterned on the semiconductor layers which are used as the first semiconductor laser and the second semiconductor laser. At this step, the photoresist layers 7 on the both sets of semiconductor layers are patterned simultaneously using a common photomask.
  • photoresist layers 7 instead of the photoresist layers 7 , other patterned films which are resistant against etching may be used.
  • Step 6 As shown in FIG. 1F , the p-GaAs cap layer 6 is removed through wet etching which uses a solution which is obtained by mixing a tartaric acid and hydrogen peroxide.
  • a wet etchant using a solution of a tartaric acid allows an improvement of etching selectivity between As-containing semiconductors and P-containing semiconductors. Because of this, the etching almost stops upon arrival at the P-containing semiconductor surface (which is the p-AlGaInP upper clad layer 4 ).
  • Step 7 As shown in FIG. 1G , using an etchant containing a sulfuric acid, the p-AlGaInP upper clad layer 4 is etched until the GaInP etching stopper layer 5 gets exposed.
  • Use of a sulfuric acid-based etchant increases etching selectivity between the AlGaInP layer (the upper clad layer), the GaInP (the etching stopper layer) and the GaAs layer (the cap layer).
  • the etching approximately stops when the GaInP etching stopper layer 5 gets exposed.
  • Insertion of the GaInP etching stopper layer 5 thus controls the shapes of ridge-type stripes in the depth direction.
  • the monolithic semiconductor laser 100 is fabricated which includes the first semiconductor laser 101 and the second semiconductor laser 102 which have different emission wavelengths.
  • Metal electrodes are formed on the back surface of the GaAs substrate 1 and the front surface of the p-GaAs cap layer 6 , which will not be described here.
  • ridge structures for the two semiconductor lasers 101 and 102 having ridge-type stripe structures are fabricated at the same time. This ensures that the relative distance between the emission points A and B at which the 650/780 nm lasers are emitted always remains constant. Even if the location of the photomask gets deviated at the step 5 , the relative distance stays unchanged while the locations of the emission points A and B are displaced.
  • the location of an optical system containing a lens and the like is finely adjusted depending upon the locations of emission points within an optical apparatus which incorporates a monolithic semiconductor laser.
  • first semiconductor laser and the second semiconductor laser are etched concurrently, which lessens the manufacturing steps.
  • FIGS. 1H and 1I show cross sectional views of steps of manufacturing other monolithic semiconductor laser 150 according to the embodiment.
  • the same reference symbols as those in FIGS. 1A-1G denote the same or corresponding portions.
  • the respective semiconductor layers are formed following the steps 1 through 4 described above ( FIGS. 1A-1D ). However, the GaInP etching stopper layer 5 is not formed.
  • protons 19 are then implanted by an ion implantation method as shown in FIG. 1H .
  • the resistance values become high in parts of the p-AlGaInP upper clad layer 4 and the p-GaAs cap layer 6 , thereby forming high-resistance layers 8 .
  • Metal electrodes (not shown) are formed on the front and the back surfaces after removal of the resist mask 18 , and the monolithic semiconductor laser 150 is thus completed.
  • the relative distance between the stripe structures of two semiconductor lasers 103 and 104 i.e., the relative distance between emission points C and D is constant.
  • the high-resistance layers are formed at the same time for the first and the second semiconductor lasers.
  • the lower clad layers and the upper clad layers of the first and the second semiconductor lasers 101 and 102 are all made of the semiconductor material having the same material and the same composition, different semiconductor materials having different material and/or different compositions may be used between the first semiconductor laser 101 and the second semiconductor laser 102 . This remains similar in the following embodiments.
  • the first semiconductor laser 101 has a structure in which the active layer 3 which is a mono-layer or multi-layer of Al x1 Ga 1-x1 As (0 ⁇ x1 ⁇ 1) is located between the lower and the upper clad layers 2 and 4 of (Al x2 Ga 1-x2 ) y2 In 1-y2 P (0 ⁇ x2 ⁇ 1, 0 ⁇ y2 ⁇ 1), while the second semiconductor laser 102 has a structure in which the active layer 13 which is a mono-layer or multi-layer of (Al x3 Ga 1-x3 ) y3 In 1-y3 P (0 ⁇ x3 ⁇ 1, 0 ⁇ y3 ⁇ 1) is located between the lower and the upper clad layers 2 and 4 of (Al x2 Ga 1-x2 ) y2 In 1-y2 P (0 ⁇ x2 ⁇ 1, 0 ⁇ y2 ⁇ 1).
  • the lower and the upper clad layers of the first semiconductor laser 101 may be made of (Al x2 Ga 1-x2 ) y2 In 1-y2 P (0 ⁇ x2 ⁇ 1, 0 ⁇ y2 ⁇ 1) and the lower and the upper clad layers of the second semiconductor laser 102 may be made of (Al x4 Ga 1-x4 ) y4 In 1-y4 P (0 ⁇ x4 ⁇ 1, 0 ⁇ y4 ⁇ 1) which is different from the material of the first semiconductor laser 101 . This is the same in the following embodiments.
  • an AlGaN-based material, a GaInNAs-based material or an AlGaInNAs-based material may be used in addition to an AlGaAs-based material and an AlGaInP-based material.
  • an AlGaInAsP-based material or an AlGaInAs-based material may be used in addition to an AlGaAs-based material and an AlGaInP-based material.
  • the active layers may be mono-layer or multi-layer. This is the same in the following embodiments.
  • FIGS. 2A-2C show cross sectional views of steps of manufacturing a monolithic semiconductor laser according to this embodiment which is generally denoted at 200 .
  • the monolithic semiconductor laser 200 has two semiconductor lasers 201 and 202 which have different emission wavelengths (The emission wavelengths are 780 nm and 650 nm for example.) ( FIG. 2C ).
  • the compositions and the like of other layers than active layers are different between the two semiconductor lasers 201 and 202 .
  • Use of stopper layers makes it possible to etch at a high accuracy also in these structures.
  • FIGS. 1A-1D a stacked structure as that shown in FIG. 2A is fabricated on an n-GaAs substrate 1 .
  • an n-GaAs substrate 1 As the first semiconductor laser, on the n-GaAs substrate 1 , an n-AlGaInP lower clad layer 21 , an AlGaAs active layer 22 , a GaInP etching stopper layer 23 , a p-AlGaInP upper clad layer (first upper clad layer) 24 and a p-GaAs cap layer 25 are stacked one atop the other.
  • an n-GaAs substrate 1 on the n-GaAs substrate 1 , an n-AlGaInP lower clad layer 31 , an AlGaInP active layer 32 , a GaInP etching stopper layer 23 , a p-AlGaInP upper clad layer (second upper clad layer) 24 , p-AlGaAs upper clad layers 33 , 34 , a p-GaAs cap layer 25 are stacked one atop the other.
  • the layers denoted at different reference symbols (those denoted at 33 and 34 for instance) have different compositions.
  • the respective semiconductor layers are formed by an MOCVD method for example.
  • photoresist layers are formed and patterned on the semiconductor layers which are used as the first and the second semiconductor lasers 201 and 202 , thereby forming a resist mask 30 .
  • the photoresist layers on the both sets of semiconductor layers are patterned simultaneously using a common photomask.
  • the structures are thus etched halfway through into the p-AlGaInP upper clad layers 24 .
  • the semiconductor lasers above the etching stopper layers 23 have different compositions and different film thicknesses.
  • the AlGaAs-based semiconductor lasers and the AlGaInP-based semiconductor lasers are etched at approximately equal etching speeds.
  • the structures are etched halfway through into the p-AlGaInP upper clad layers 24 as shown in FIG. 2B .
  • the p-AlGaInP upper clad layers 24 are etched using a sulfuric acid-based etchant until the GaInP etching stopper layers 23 get exposed.
  • the GaAs cap layers 25 serve as an etching mask.
  • the etching almost stops when the GaInP etching stopper layers 23 get exposed.
  • ridge-type stripe structures as those shown in FIG. 2C are fabricated.
  • metal electrodes (not shown) are formed on the front and the back surfaces, whereby the monolithic semiconductor laser 200 is completed.
  • the gap between the ridge-type stripes of the two semiconductor lasers 201 and 202 namely, the relative distance between emission points E and F is constant.
  • the first semiconductor laser 201 and the second semiconductor laser 202 include the GaInP etching stopper layers 23 and the upper clad layers 24 which are formed immediately on the GaInP etching stopper layers 23 and exhibit high etching selectivity against the GaInP etching stopper layers 23 .
  • the compositions of them may be chosen without considering the etching step.
  • high-resistance layers may be formed to obtain the stripe structures.
  • FIGS. 3A-3C show cross sectional views of steps of manufacturing a monolithic semiconductor laser according to this embodiment which is generally denoted at 300 .
  • the monolithic semiconductor laser 300 comprises two semiconductor lasers 301 and 302 which have different emission wavelengths (The emission wavelengths are 780 nm and 650 nm for example.) ( FIG. 3C ).
  • ridge-type stripes are formed so that the ridge-type stripes have different depths between the two semiconductor lasers 301 and 302 , and the refractive indices of the ridge-type stripes are adjusted.
  • a stacked structure as that shown in FIG. 3A is fabricated on an n-GaAs substrate 1 .
  • an n-AlGaInP lower clad layer 41 As the first semiconductor laser, on the n-GaAs substrate 1 , an n-AlGaInP lower clad layer 41 , an AlGaAs active layer 42 , a GaInP etching stopper layer 43 , a p-AlGaInP upper clad layer (first upper clad layer) 44 and a p-GaAs cap layer 45 are stacked one atop the other.
  • an n-GaAs substrate 1 on the n-GaAs substrate 1 , an n-AlGaInP lower clad layer 51 , an AlGaInP active layer 52 , an n-AlGaAs upper clad layer 53 , a GaInP etching stopper layer 43 , a p-AlGaInP upper clad layer (second upper clad layer) 44 , p-AlGaAs upper clad layers 54 , 55 , a p-GaAs cap layer 45 are stacked one atop the other.
  • the layers denoted at different reference symbols (those denoted at 54 and 55 for instance) have different compositions.
  • the respective semiconductor layers are formed by an MOCVD method for example.
  • photoresist layers are formed and patterned on the semiconductor layers which are used as the first and the second semiconductor lasers 301 and 302 , thereby forming a resist mask 40 .
  • the photoresist layers on the both sets of semiconductor layers are patterned simultaneously using a common photomask.
  • the structures are etched halfway through into the p-AlGaAs upper clad layers 44 , as shown in FIG. 3B .
  • This etching may be ECR etching which is used in the embodiment 2 described above.
  • the p-AlGaInP clad layers 44 are then etched using a sulfuric acid-based etchant until the GaInP etching stopper layers 43 get exposed after removal of the resist mask 40 .
  • the GaAs cap layers 45 serve as an etching mask. The etching almost stops when the GaInP etching stopper layers 43 get exposed.
  • ridge-type stripe structures as those shown in FIG. 3C are fabricated.
  • metal electrodes (not shown) are formed on the front and the back surfaces, whereby the monolithic semiconductor laser 300 is completed.
  • the semiconductor lasers 301 and 302 in which the ridge-type stripes have different depths are fabricated on the same substrate in such a manner that the gaps between the ridges are maintained approximately constant.
  • FIGS. 4A-4C show cross sectional views of steps of manufacturing a monolithic semiconductor laser according to this embodiment which is generally denoted at 400 .
  • the monolithic semiconductor laser 400 has two semiconductor lasers 401 and 402 which have different emission wavelengths (The emission wavelengths are 780 nm and 650 nm for example.) ( FIG. 4C ).
  • the two semiconductor lasers 401 and 402 have different heights (namely, the heights from the surface of a GaAs substrate 1 up to the surfaces of GaAs cap layers 50 ).
  • a stacked structure as that shown in FIG. 4A is fabricated on the n-GaAs substrate 1 .
  • an n-AlGaInP lower clad layer 61 As the first semiconductor laser 401 , on the n-GaAs substrate 1 , an n-AlGaInP lower clad layer 61 , an AlGaAs active layer 62 , a GaInP etching stopper layer 63 , a p-AlGaInP upper clad layer (first upper clad layer) 64 and a p-GaAs cap layer 65 are stacked one atop the other.
  • an n-AlGaInP lower clad layer 71 on the n-GaAs substrate 1 , an n-AlGaInP lower clad layer 71 , an AlGaInP active layer 72 , an n-AlGaAs upper clad layer 73 , a GaInP etching stopper layer 63 , a p-AlGaInP upper clad layer (second upper clad layer) 64 , p-AlGaAs upper clad layers 74 , 75 , a p-GaAs cap layer 65 are stacked one atop the other.
  • the layers denoted at different reference symbols (those denoted at 54 and 55 for instance) have different compositions.
  • the respective semiconductor layers are formed by an MOCVD method for example.
  • the first semiconductor laser 401 and the second semiconductor laser 402 have different heights, and there is thus a stepped surface.
  • photoresist layers are formed and patterned on the semiconductor layers which are used as the first and the second semiconductor lasers 401 and 402 , thereby forming a resist mask 50 .
  • the photoresist layers on the both sets of semiconductor layers are patterned simultaneously using a common photomask. In this manner, even when the first and the second semiconductor lasers have different heights and there is a surface which is stepped to a certain extent, the both photoresist layers are patterned simultaneously.
  • the structures are etched halfway through into the p-AlGaAs upper clad layers 64 , as shown in FIG. 4B .
  • This etching may be ECR etching which is used in the embodiment 2 described earlier.
  • the p-AlGaInP clad layers 64 are then etched using a sulfuric acid-based etchant until the GaInP etching stopper layers 63 get exposed after removal of the resist mask 50 .
  • the GaAs cap layers 65 serve as an etching mask. The etching almost stops when the GaInP stopper layers 63 get exposed.
  • ridge-type stripe structures as those shown in FIG. 4C are fabricated.
  • metal electrodes (not shown) are formed on the front and the back surfaces, whereby the monolithic semiconductor laser 400 is completed.
  • the semiconductor lasers 401 and 402 in which the ridge-type stripes have different heights are fabricated on the same substrate.
  • high-resistance layers may be formed to obtain the stripe structures.
  • the present invention is applicable to a monolithic semiconductor laser which comprises three or more semiconductor lasers.
  • the foregoing has described such semiconductor lasers which have emission wavelengths of 780 nm and 650 nm, the present invention is applicable also to semiconductor lasers which have other emission wavelengths.
US10/898,196 2003-09-30 2004-07-26 Monolithic semiconductor laser and method of manufacturing the same Abandoned US20050069005A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/878,027 US7602830B2 (en) 2003-09-30 2007-07-20 Monolithic semiconductor laser and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-339768 2003-09-20
JP2003339768A JP2005109102A (ja) 2003-09-30 2003-09-30 モノリシック半導体レーザおよびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/878,027 Division US7602830B2 (en) 2003-09-30 2007-07-20 Monolithic semiconductor laser and method of manufacturing the same

Publications (1)

Publication Number Publication Date
US20050069005A1 true US20050069005A1 (en) 2005-03-31

Family

ID=34309017

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/898,196 Abandoned US20050069005A1 (en) 2003-09-30 2004-07-26 Monolithic semiconductor laser and method of manufacturing the same
US11/878,027 Expired - Fee Related US7602830B2 (en) 2003-09-30 2007-07-20 Monolithic semiconductor laser and method of manufacturing the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
US11/878,027 Expired - Fee Related US7602830B2 (en) 2003-09-30 2007-07-20 Monolithic semiconductor laser and method of manufacturing the same

Country Status (7)

Country Link
US (2) US20050069005A1 (zh)
EP (2) EP1521341B1 (zh)
JP (1) JP2005109102A (zh)
KR (1) KR100689207B1 (zh)
CN (1) CN100508312C (zh)
DE (1) DE602004006815T2 (zh)
TW (1) TWI239704B (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060227831A1 (en) * 2005-04-08 2006-10-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser apparatus
US20080043797A1 (en) * 2006-08-11 2008-02-21 Toru Takayama Semiconductor laser device and method for fabricating the same
US20090034569A1 (en) * 2005-08-24 2009-02-05 Rohm Co., Ltd. Monolithic semiconductor laser
US20090086781A1 (en) * 2005-08-24 2009-04-02 Rohm Co., Ltd. Monolithic semiconductor laser
US20090093076A1 (en) * 2007-10-09 2009-04-09 Mitsubishi Electric Corporation Method for manufacturing monolithic semiconductor laser
US20090180508A1 (en) * 2008-01-11 2009-07-16 Kouji Makita Two-wavelength semiconductor laser device and its fabricating method
US20120250718A1 (en) * 2011-03-30 2012-10-04 Sony Corporation Multi-wavelength semiconductor laser device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081173A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd モノリシック２波長半導体レーザ及びその製造方法
KR101423721B1 (ko) * 2007-10-09 2014-07-31 서울바이오시스 주식회사 나노 패턴들을 갖는 레이저 다이오드 및 그것을 제조하는방법
JP5620446B2 (ja) 2012-09-24 2014-11-05 ファナック株式会社 Ｇコード指令によりビデオカメラを操作する機能を備えた数値制御装置

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890293A (en) * 1987-10-08 1989-12-26 Sharp Kabushiki Kaisha Semiconductor laser device
US5022036A (en) * 1988-12-29 1991-06-04 Sharp Kabushiki Kaisha Semiconductor laser device
US5513260A (en) * 1994-06-29 1996-04-30 Macrovision Corporation Method and apparatus for copy protection for various recording media
US5536085A (en) * 1995-03-30 1996-07-16 Northern Telecom Limited Multi-wavelength gain-coupled distributed feedback laser array with fine tunability
US5982799A (en) * 1994-09-14 1999-11-09 Xerox Corporation Multiple-wavelength laser diode array using quantum well band filling
US6108296A (en) * 1997-08-20 2000-08-22 Sanyo Electric Co., Ltd. Optical recording disc capable of preventing illegal copy
US6256330B1 (en) * 1996-12-02 2001-07-03 Lacomb Ronald Bruce Gain and index tailored single mode semiconductor laser
US20010014109A1 (en) * 1997-08-18 2001-08-16 Kiichi Hamamoto Single-transverse-mode laser diode with multi-mode waveguide region and manufacturing method of the same
US20010017873A1 (en) * 2000-02-29 2001-08-30 Osamu Imafuji Semiconductor laser diode array and method of fabricating the same
US20020021635A1 (en) * 2000-04-11 2002-02-21 Sang On Park Recording and reproducing apparatus having copy-protection function and method thereof
US20020097662A1 (en) * 2001-01-19 2002-07-25 Yoshihisa Fujii Semiconductor laser element, method for manufacturing the same, and optical pickup using the same
US20020187577A1 (en) * 2001-06-11 2002-12-12 Sharp Kabushiki Kaisha Semiconductor laser device and process for producing the same
US20030058909A1 (en) * 2001-07-19 2003-03-27 Nortel Networks Limited Method and apparatus for fabricating semiconductor lasers
US20030091085A1 (en) * 2001-11-15 2003-05-15 Xerox Corporation Dual III-V nitride laser structure with reduced thermal cross-talk
US6590919B1 (en) * 1998-03-10 2003-07-08 Sharp Kabushiki Kaisha Nitride group compound semiconductor laser device and method for producing the same
US6618420B1 (en) * 1999-08-18 2003-09-09 Kabushiki Kaisha Toshiba Monolithic multi-wavelength semiconductor laser unit
US6646975B1 (en) * 1998-06-26 2003-11-11 Kabushiki Kaisha Toshiba Semiconductor laser array and its manufacturing method, optical integrated unit and optical pickup
US6680958B1 (en) * 1999-09-08 2004-01-20 Sony Corporation Semiconductor laser and method of production of the same
US7079474B2 (en) * 2000-01-24 2006-07-18 Pioneer Corporation Optical pickup apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118570B2 (ja) * 1993-02-01 1995-12-18 日本電気株式会社 面発光素子およびその製造方法
JP3147148B2 (ja) * 1996-12-12 2001-03-19 日本電気株式会社 半導体レーザの製造方法
US6618417B2 (en) * 1998-11-30 2003-09-09 The Furukawa Electric Co., Ltd. Ridge waveguide semiconductor laser diode
JP2000244060A (ja) * 1998-12-22 2000-09-08 Sony Corp 半導体発光装置およびその製造方法
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
JP4599687B2 (ja) * 2000-08-08 2010-12-15 ソニー株式会社 レーザダイオード、半導体発光装置および製造方法
JP2002223038A (ja) * 2001-01-23 2002-08-09 Toshiba Corp 半導体レーザ装置
JP2002223030A (ja) 2001-01-24 2002-08-09 Toshiba Corp 半導体レーザ装置
JP4656362B2 (ja) 2001-07-16 2011-03-23 ソニー株式会社 半導体レーザー装置の製造方法
JP2003273464A (ja) * 2002-03-19 2003-09-26 Mitsubishi Electric Corp リッジ導波路型半導体レーザ装置

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890293A (en) * 1987-10-08 1989-12-26 Sharp Kabushiki Kaisha Semiconductor laser device
US5022036A (en) * 1988-12-29 1991-06-04 Sharp Kabushiki Kaisha Semiconductor laser device
US5513260A (en) * 1994-06-29 1996-04-30 Macrovision Corporation Method and apparatus for copy protection for various recording media
US5982799A (en) * 1994-09-14 1999-11-09 Xerox Corporation Multiple-wavelength laser diode array using quantum well band filling
US5536085A (en) * 1995-03-30 1996-07-16 Northern Telecom Limited Multi-wavelength gain-coupled distributed feedback laser array with fine tunability
US6256330B1 (en) * 1996-12-02 2001-07-03 Lacomb Ronald Bruce Gain and index tailored single mode semiconductor laser
US20010014109A1 (en) * 1997-08-18 2001-08-16 Kiichi Hamamoto Single-transverse-mode laser diode with multi-mode waveguide region and manufacturing method of the same
US6108296A (en) * 1997-08-20 2000-08-22 Sanyo Electric Co., Ltd. Optical recording disc capable of preventing illegal copy
US6590919B1 (en) * 1998-03-10 2003-07-08 Sharp Kabushiki Kaisha Nitride group compound semiconductor laser device and method for producing the same
US20040062285A1 (en) * 1998-06-26 2004-04-01 Kabushiki Kaisha Toshiba Semiconductor laser array and its manufacturing method, optical integrated unit and optical pickup
US6646975B1 (en) * 1998-06-26 2003-11-11 Kabushiki Kaisha Toshiba Semiconductor laser array and its manufacturing method, optical integrated unit and optical pickup
US6618420B1 (en) * 1999-08-18 2003-09-09 Kabushiki Kaisha Toshiba Monolithic multi-wavelength semiconductor laser unit
US6680958B1 (en) * 1999-09-08 2004-01-20 Sony Corporation Semiconductor laser and method of production of the same
US7079474B2 (en) * 2000-01-24 2006-07-18 Pioneer Corporation Optical pickup apparatus
US20010017873A1 (en) * 2000-02-29 2001-08-30 Osamu Imafuji Semiconductor laser diode array and method of fabricating the same
US20020021635A1 (en) * 2000-04-11 2002-02-21 Sang On Park Recording and reproducing apparatus having copy-protection function and method thereof
US20020097662A1 (en) * 2001-01-19 2002-07-25 Yoshihisa Fujii Semiconductor laser element, method for manufacturing the same, and optical pickup using the same
US20020187577A1 (en) * 2001-06-11 2002-12-12 Sharp Kabushiki Kaisha Semiconductor laser device and process for producing the same
US20030058909A1 (en) * 2001-07-19 2003-03-27 Nortel Networks Limited Method and apparatus for fabricating semiconductor lasers
US20030091085A1 (en) * 2001-11-15 2003-05-15 Xerox Corporation Dual III-V nitride laser structure with reduced thermal cross-talk

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060227831A1 (en) * 2005-04-08 2006-10-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser apparatus
US7260132B2 (en) * 2005-04-08 2007-08-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser apparatus
US7711024B2 (en) 2005-08-24 2010-05-04 Rohm Co., Ltd. Monolithic semiconductor laser
US20090034569A1 (en) * 2005-08-24 2009-02-05 Rohm Co., Ltd. Monolithic semiconductor laser
US20090086781A1 (en) * 2005-08-24 2009-04-02 Rohm Co., Ltd. Monolithic semiconductor laser
US7965753B2 (en) 2005-08-24 2011-06-21 Rohm Co., Ltd. Monolithic semiconductor laser
US7539230B2 (en) * 2006-08-11 2009-05-26 Panasonic Corporation Semiconductor laser device and method for fabricating the same
US20080043797A1 (en) * 2006-08-11 2008-02-21 Toru Takayama Semiconductor laser device and method for fabricating the same
US20090093076A1 (en) * 2007-10-09 2009-04-09 Mitsubishi Electric Corporation Method for manufacturing monolithic semiconductor laser
US7678596B2 (en) 2007-10-09 2010-03-16 Mitsubishi Electric Corporation Method for manufacturing monolithic semiconductor laser
US20090180508A1 (en) * 2008-01-11 2009-07-16 Kouji Makita Two-wavelength semiconductor laser device and its fabricating method
US7809042B2 (en) 2008-01-11 2010-10-05 Panasonic Corporation Two-wavelength semiconductor laser device and its fabricating method
US20120250718A1 (en) * 2011-03-30 2012-10-04 Sony Corporation Multi-wavelength semiconductor laser device
US8976832B2 (en) * 2011-03-30 2015-03-10 Sony Corporation Multi-wavelength semiconductor laser device

Also Published As

Publication number Publication date
EP1788679B1 (en) 2011-08-24
US7602830B2 (en) 2009-10-13
TWI239704B (en) 2005-09-11
CN100508312C (zh) 2009-07-01
EP1521341A2 (en) 2005-04-06
DE602004006815T2 (de) 2008-02-07
EP1521341A3 (en) 2005-04-20
KR20050031898A (ko) 2005-04-06
JP2005109102A (ja) 2005-04-21
DE602004006815D1 (de) 2007-07-19
EP1788679A3 (en) 2007-07-04
EP1521341B1 (en) 2007-06-06
CN1604415A (zh) 2005-04-06
US20070264738A1 (en) 2007-11-15
EP1788679A2 (en) 2007-05-23
TW200512995A (en) 2005-04-01
KR100689207B1 (ko) 2007-03-02

Similar Documents

Publication Publication Date Title
US7602830B2 (en) Monolithic semiconductor laser and method of manufacturing the same
EP0651478B1 (en) Stacked active region laser array for multicolor emissions
JPH11220224A (ja) 半導体レーザ装置
JP2003347677A (ja) 半導体レーザ素子
JPH07154024A (ja) 半導体レーザー
JP2001053384A (ja) 半導体レーザ装置およびその製造方法
JP3859839B2 (ja) 屈折率導波型半導体レーザ装置
US7382814B2 (en) Semiconductor laser device and method of manufacturing the same
JP2005347478A (ja) 半導体レーザ素子
US7173273B2 (en) Semiconductor laser device
JP4617684B2 (ja) 半導体レーザ素子
JP4026085B2 (ja) 面発光型半導体レーザ装置およびその製造方法
JP2909133B2 (ja) 半導体レーザ装置
JP2003152282A (ja) 半導体レーザ素子
JPH0637389A (ja) 半導体レーザ素子の製造方法
JP3348717B2 (ja) 半導体レーザ
JPH1197794A (ja) 半導体レーザ装置
JP2001053390A (ja) 半導体レーザ装置およびその製造方法
JPH0575204A (ja) 半導体発光装置及びその製造方法
JP2007103790A (ja) 高出力赤色半導体レーザ
Cheng Design, fabrication and characterization of high-performance native-oxide confined InGaAs/GaAs quantum-well edge-emitting and surface-emitting lasers
JP2002246689A (ja) 半導体リングレーザーの製造方法
JP2003031904A (ja) 半導体レーザー装置の製造方法
JP2000068592A (ja) 半導体レーザ素子
JP2003078205A (ja) 半導体レーザ素子

Legal Events

Date Code Title Description
AS Assignment

Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NISHIDA, TAKEHIRO;MIYASHITA, MOTOHARU;YAMAGUCHI, TSUTOMU;REEL/FRAME:015614/0522

Effective date: 20040701

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO PAY ISSUE FEE