DE602004006815D1 - Monolithischer Halbleiterlaser und dessen Herstellungsverfahren - Google Patents

Monolithischer Halbleiterlaser und dessen Herstellungsverfahren

Info

Publication number
DE602004006815D1
DE602004006815D1 DE602004006815T DE602004006815T DE602004006815D1 DE 602004006815 D1 DE602004006815 D1 DE 602004006815D1 DE 602004006815 T DE602004006815 T DE 602004006815T DE 602004006815 T DE602004006815 T DE 602004006815T DE 602004006815 D1 DE602004006815 D1 DE 602004006815D1
Authority
DE
Germany
Prior art keywords
production method
semiconductor laser
monolithic semiconductor
monolithic
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004006815T
Other languages
English (en)
Other versions
DE602004006815T2 (de
Inventor
Takehiro Nishida
Motoharu Miyashita
Tsutomu Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE602004006815D1 publication Critical patent/DE602004006815D1/de
Application granted granted Critical
Publication of DE602004006815T2 publication Critical patent/DE602004006815T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
DE602004006815T 2003-09-30 2004-09-30 Monolithischer Halbleiterlaser und dessen Herstellungsverfahren Active DE602004006815T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003339768A JP2005109102A (ja) 2003-09-30 2003-09-30 モノリシック半導体レーザおよびその製造方法
JP2003339768 2003-09-30

Publications (2)

Publication Number Publication Date
DE602004006815D1 true DE602004006815D1 (de) 2007-07-19
DE602004006815T2 DE602004006815T2 (de) 2008-02-07

Family

ID=34309017

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004006815T Active DE602004006815T2 (de) 2003-09-30 2004-09-30 Monolithischer Halbleiterlaser und dessen Herstellungsverfahren

Country Status (7)

Country Link
US (2) US20050069005A1 (de)
EP (2) EP1788679B1 (de)
JP (1) JP2005109102A (de)
KR (1) KR100689207B1 (de)
CN (1) CN100508312C (de)
DE (1) DE602004006815T2 (de)
TW (1) TWI239704B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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JP2006313875A (ja) * 2005-04-08 2006-11-16 Mitsubishi Electric Corp 半導体レーザ装置
JP2007059577A (ja) * 2005-08-24 2007-03-08 Rohm Co Ltd モノリシック型半導体レーザ
JP5073186B2 (ja) * 2005-08-24 2012-11-14 ローム株式会社 モノリシック型半導体レーザ
JP2007081173A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd モノリシック２波長半導体レーザ及びその製造方法
JP4295776B2 (ja) * 2006-08-11 2009-07-15 パナソニック株式会社 半導体レーザ装置及びその製造方法
JP2009094289A (ja) 2007-10-09 2009-04-30 Mitsubishi Electric Corp モノリシック半導体レーザの製造方法
KR101423721B1 (ko) * 2007-10-09 2014-07-31 서울바이오시스 주식회사 나노 패턴들을 갖는 레이저 다이오드 및 그것을 제조하는방법
JP4930925B2 (ja) 2008-01-11 2012-05-16 パナソニック株式会社 二波長半導体レーザ装置
JP5787069B2 (ja) * 2011-03-30 2015-09-30 ソニー株式会社 多波長半導体レーザ素子
JP5620446B2 (ja) 2012-09-24 2014-11-05 ファナック株式会社 Ｇコード指令によりビデオカメラを操作する機能を備えた数値制御装置

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JP2558744B2 (ja) * 1987-10-08 1996-11-27 シャープ株式会社 半導体レーザ素子及びその製造方法
US5022036A (en) * 1988-12-29 1991-06-04 Sharp Kabushiki Kaisha Semiconductor laser device
JPH07118570B2 (ja) * 1993-02-01 1995-12-18 日本電気株式会社 面発光素子およびその製造方法
US5513260A (en) * 1994-06-29 1996-04-30 Macrovision Corporation Method and apparatus for copy protection for various recording media
JPH08107254A (ja) * 1994-09-14 1996-04-23 Xerox Corp マルチ波長レーザダイオードアレイ
US5536085A (en) * 1995-03-30 1996-07-16 Northern Telecom Limited Multi-wavelength gain-coupled distributed feedback laser array with fine tunability
US6256330B1 (en) * 1996-12-02 2001-07-03 Lacomb Ronald Bruce Gain and index tailored single mode semiconductor laser
JP3147148B2 (ja) * 1996-12-12 2001-03-19 日本電気株式会社 半導体レーザの製造方法
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Also Published As

Publication number Publication date
US20070264738A1 (en) 2007-11-15
CN100508312C (zh) 2009-07-01
JP2005109102A (ja) 2005-04-21
EP1521341B1 (de) 2007-06-06
US7602830B2 (en) 2009-10-13
KR100689207B1 (ko) 2007-03-02
EP1521341A3 (de) 2005-04-20
CN1604415A (zh) 2005-04-06
US20050069005A1 (en) 2005-03-31
EP1788679B1 (de) 2011-08-24
EP1788679A2 (de) 2007-05-23
TW200512995A (en) 2005-04-01
EP1788679A3 (de) 2007-07-04
DE602004006815T2 (de) 2008-02-07
KR20050031898A (ko) 2005-04-06
EP1521341A2 (de) 2005-04-06
TWI239704B (en) 2005-09-11

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