US20020043683A1 - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing method Download PDFInfo
- Publication number
- US20020043683A1 US20020043683A1 US09/964,592 US96459201A US2002043683A1 US 20020043683 A1 US20020043683 A1 US 20020043683A1 US 96459201 A US96459201 A US 96459201A US 2002043683 A1 US2002043683 A1 US 2002043683A1
- Authority
- US
- United States
- Prior art keywords
- film
- gate
- insulating film
- memory cell
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- 206010016275 Fear Diseases 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- WDHWFGNRFMPTQS-UHFFFAOYSA-N cobalt tin Chemical compound [Co].[Sn] WDHWFGNRFMPTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/423,963 US20040075133A1 (en) | 2000-09-29 | 2003-04-28 | Semiconductor device and its manufacturing method |
US11/602,246 US7476582B2 (en) | 2000-09-29 | 2006-11-21 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-301298 | 2000-09-29 | ||
JP2000301298A JP4096507B2 (ja) | 2000-09-29 | 2000-09-29 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/423,963 Continuation US20040075133A1 (en) | 2000-09-29 | 2003-04-28 | Semiconductor device and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20020043683A1 true US20020043683A1 (en) | 2002-04-18 |
Family
ID=18782858
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/964,592 Abandoned US20020043683A1 (en) | 2000-09-29 | 2001-09-28 | Semiconductor device and its manufacturing method |
US10/423,963 Abandoned US20040075133A1 (en) | 2000-09-29 | 2003-04-28 | Semiconductor device and its manufacturing method |
US11/602,246 Expired - Fee Related US7476582B2 (en) | 2000-09-29 | 2006-11-21 | Semiconductor device and its manufacturing method |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/423,963 Abandoned US20040075133A1 (en) | 2000-09-29 | 2003-04-28 | Semiconductor device and its manufacturing method |
US11/602,246 Expired - Fee Related US7476582B2 (en) | 2000-09-29 | 2006-11-21 | Semiconductor device and its manufacturing method |
Country Status (5)
Country | Link |
---|---|
US (3) | US20020043683A1 (fr) |
EP (1) | EP1193762A3 (fr) |
JP (1) | JP4096507B2 (fr) |
KR (1) | KR100805868B1 (fr) |
TW (1) | TW531898B (fr) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
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US20050001267A1 (en) * | 2003-07-04 | 2005-01-06 | Semiconductor Leading Edge Technologies, Inc. | Semiconductor device having a damascene-type gate or a replacing-type gate and method of manufacturing the same |
US20050095727A1 (en) * | 2003-11-05 | 2005-05-05 | Weng Chang | Test region layout for shallow trench isolation |
US20060151811A1 (en) * | 2002-11-07 | 2006-07-13 | Samsung Electronics Co., Ltd. | Floating gate memory device and method of manufacturing the same |
US20070066004A1 (en) * | 2000-09-29 | 2007-03-22 | Fujitsu Limited | Semiconductor device and its manufacture method |
US20080054339A1 (en) * | 2006-09-06 | 2008-03-06 | Yong-Keon Choi | Flash memory device with single-poly structure and method for manufacturing the same |
US20080105918A1 (en) * | 2006-11-06 | 2008-05-08 | Sang-Hun Jeon | Nonvolatile memory devices and methods of fabricating the same |
US20080315314A1 (en) * | 2007-05-21 | 2008-12-25 | Dongbu Hitek Co., Ltd. | Semiconductor device having a dual gate electrode and methods of making the same |
US20100068876A1 (en) * | 2008-09-12 | 2010-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of fabricating high-k metal gate devices |
US20100087038A1 (en) * | 2008-10-06 | 2010-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for n/p patterning in a gate last process |
DE10326771B4 (de) * | 2002-06-14 | 2010-08-19 | Qimonda Flash Gmbh | Integrierte Speicherschaltung und Verfahren zum Bilden einer integrierten Speicherschaltung |
US20100237401A1 (en) * | 2009-03-18 | 2010-09-23 | Samsung Electronics Co., Ltd. | Gate structures of semiconductor devices |
US20130154020A1 (en) * | 2011-12-16 | 2013-06-20 | Hitachi Global Storage Technologies Netherlands B.V. | System, method and apparatus for seedless electroplated structure on a semiconductor substrate |
CN103854985A (zh) * | 2012-12-03 | 2014-06-11 | 中国科学院微电子研究所 | 一种后栅工艺假栅的制造方法和后栅工艺假栅 |
CN104425508A (zh) * | 2013-08-21 | 2015-03-18 | 飞思卡尔半导体公司 | 集成的分裂栅非易失性存储器单元和逻辑结构 |
US20180006048A1 (en) * | 2013-02-12 | 2018-01-04 | Renesas Electronics Corporation | Method of manufacturing a semiconductor device |
US20190371396A1 (en) * | 2008-12-19 | 2019-12-05 | Unity Semiconductor Corporation | Conductive metal oxide structures in non-volatile re-writable memory devices |
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JP4774568B2 (ja) * | 1999-10-01 | 2011-09-14 | ソニー株式会社 | 半導体装置の製造方法 |
JP4439142B2 (ja) | 2001-06-26 | 2010-03-24 | 株式会社東芝 | 不揮発性半導体メモリの製造方法 |
US6770932B2 (en) * | 2002-07-10 | 2004-08-03 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereof |
KR100798268B1 (ko) * | 2002-12-28 | 2008-01-24 | 동부일렉트로닉스 주식회사 | 플래시 메모리 소자 및 그 제조 방법 |
KR100937651B1 (ko) * | 2002-12-31 | 2010-01-19 | 동부일렉트로닉스 주식회사 | 반도체 장치 및 이의 제조 방법 |
KR100511043B1 (ko) * | 2003-03-07 | 2005-08-30 | 삼성전자주식회사 | 반도체 장치의 금속 실리사이드 층의 형성 방법 |
US7091130B1 (en) * | 2004-06-25 | 2006-08-15 | Freescale Semiconductor, Inc. | Method of forming a nanocluster charge storage device |
KR100688575B1 (ko) * | 2004-10-08 | 2007-03-02 | 삼성전자주식회사 | 비휘발성 반도체 메모리 소자 |
TWI252512B (en) * | 2004-10-20 | 2006-04-01 | Hynix Semiconductor Inc | Semiconductor device and method of manufacturing the same |
US7361543B2 (en) * | 2004-11-12 | 2008-04-22 | Freescale Semiconductor, Inc. | Method of forming a nanocluster charge storage device |
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Also Published As
Publication number | Publication date |
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JP4096507B2 (ja) | 2008-06-04 |
JP2002110824A (ja) | 2002-04-12 |
EP1193762A2 (fr) | 2002-04-03 |
US7476582B2 (en) | 2009-01-13 |
KR100805868B1 (ko) | 2008-02-20 |
US20040075133A1 (en) | 2004-04-22 |
TW531898B (en) | 2003-05-11 |
US20070066004A1 (en) | 2007-03-22 |
KR20020025839A (ko) | 2002-04-04 |
EP1193762A3 (fr) | 2003-02-12 |
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