US10725379B2 - Polymide precursor resin composition - Google Patents

Polymide precursor resin composition Download PDF

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US10725379B2
US10725379B2 US14/654,740 US201314654740A US10725379B2 US 10725379 B2 US10725379 B2 US 10725379B2 US 201314654740 A US201314654740 A US 201314654740A US 10725379 B2 US10725379 B2 US 10725379B2
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group
resin composition
carbon atoms
general formula
formula
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US20150337116A1 (en
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Keishi Ono
Tetsuya Enomoto
Masayuki Ohe
Keiko Suzuki
Kazuya SOEJIMA
Etsuharu SUZUKI
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HD MicroSystems Ltd
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Hitachi Chemical DuPont Microsystems Ltd
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Assigned to HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. reassignment HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ENOMOTO, TETSUYA, OHE, MASAYUKI, SOEJIMA, Kazuya, SUZUKI, Etsuharu, SUZUKI, KEIKO, ONO, KEISHI
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14—Polymers provided for in subclass C08G
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/32—Compounds containing nitrogen bound to oxygen
    • C08K5/33—Oximes
    • C08K5/5442—
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C08K5/5455—Silicon-containing compounds containing nitrogen containing at least one group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C08K5/5477—Silicon-containing compounds containing nitrogen containing nitrogen in a heterocyclic ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/30—Imagewise removal using liquid means
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    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Definitions

  • the present invention relates to a resin composition that is excellent in storage stability and is capable of forming a cured film having a low stress and improved adhesiveness with a substrate, and to a method for producing a pattern using this resin composition.
  • an interlayer insulating film called a “low-k layer” for lowering a dielectric constant has been required.
  • the low-k layer has a void structure, a problem arises that mechanical strength is lowered.
  • a cured film formed of a polyimide resin is used. This cured film is required to have properties such as capability of being thick and having a high modulus elasticity.
  • the stress after curing may increase, and problems may arise that transfer or securing of a wafer may not necessarily be conducted smoothly due to significant warpage of a semiconductor wafer. Under such circumstances, development of a cured film having a low stress has been desired.
  • Patent Documents 1 and 2, for example a cured film obtained by curing by heating a polyimide precursor containing fluorine has low adhesiveness to silicon wafer used as a substrate.
  • Patent Document 3 for example.
  • the storage stability of the resin composition is lowered due to the presence of an isocyanate group having a high reactivity.
  • Patent Document 1 Japanese Patent No. 2826940
  • Patent Document 2 Japanese Patent No. 4144110
  • Patent Document 3 JP-A-H11-338157
  • an object of the present invention is to provide a resin composition that has excellent storage stability and is capable of forming a cured film that has a low stress and has excellent adhesiveness with a substrate, and as well as to provide a method for producing a cured film using this resin composition.
  • the present invention relates to the following:
  • a resin composition comprising the following components (a) and (b)
  • R 1 is a tetravalent organic group
  • R 2 is a divalent organic group
  • R 3 and R 4 are independently a hydrogen atom, an alkyl group, a cycloalkyl group or a monovalent organic group having a carbon-carbon unsaturated double bond.
  • R 5 is an alkyl group having 1 to 4 carbon atoms
  • R 6 is independently a hydroxyl group or an alkyl group having 1 to 4 carbon atoms
  • a is an integer of 0 to 3
  • n is an integer of 1 to 6
  • R 7 is a group represented by the following general formula (3) or a group represented by the following general formula (4):
  • R 8 is an alkyl group having 1 to 10 carbon atoms or a monovalent organic group derived from hydroxyalkylsilane
  • R 9 is an alkyl group having 1 to 10 carbon atoms, a monovalent organic group derived from aminoalkylsilane or a heterocyclic group
  • R 8 and R 9 each may have a substituent.
  • R 10 to R 17 are independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 10 to R 17 is a fluorine atom or a trifluoromethyl group.
  • R 18 and R 19 are independently a fluorine atom or a trifluoromethyl group.
  • the resin composition that further comprises a compound (c) that generates a radical upon irradiation with active rays ⁇ 6>
  • the resin composition in which the compound (c) that generates a radical upon irradiation with active rays is an oxime ester compound ⁇ 7>
  • a cured film formed from the resin composition ⁇ 8> A method for producing a cured film comprising: a step of applying the resin composition to a substrate, followed by drying, thereby to form a coating film; and a step of subjecting the coating film to a heat treatment ⁇ 9>
  • a method for producing a patterned cured film comprising: a step of applying the resin composition to a substrate, followed by drying, thereby to form a coating film; a step of irradiating the coating film with active rays, followed by development to obtain
  • the present invention it is possible to provide a resin composition that has excellent storage stability and is capable of forming a cured film that has a low stress and has excellent adhesiveness with a substrate, and as well as to provide a method for producing a cured film using this resin composition.
  • FIG. 1 is a schematic cross-sectional view of one embodiment of a semiconductor device using the resin composition of the present invention.
  • the resin composition of the present invention comprises the following components (a) and (b):
  • R 1 is a tetravalent organic group
  • R 2 is a divalent organic group
  • R 3 and R 4 are independently a hydrogen atom, an alkyl group, a cycloalkyl group or a monovalent organic group having a carbon-carbon unsaturated double bond.
  • R 5 is an alkyl group having 1 to 4 carbon atoms
  • R 6 is independently a hydroxyl group or an alkyl group having 1 to 4 carbon atoms
  • a is an integer of 0 to 3
  • n is an integer of 1 to 6
  • R 7 is a group represented by the following general formula (3) or a group represented by the following general formula (4):
  • R 8 is an alkyl group having 1 to 10 carbon atoms or a monovalent organic group derived from hydroxyalkylsilane
  • R 9 is an alkyl group having 1 to 10 carbon atoms, a monovalent organic group derived from aminoalkylsilane or a heterocyclic group
  • R 8 and R 9 each may have a substituent.
  • the component (B) is an adhesion aid.
  • a state is attained where a highly reactive isocyanate group is protected. Accordingly, as compared with a case where a conventional adhesion aid is used, a resin composition having excellent storage stability can be obtained. Further, the resulting cured film has a low stress and excellent adhesiveness with a substrate.
  • a detailed explanation will be made on each component.
  • the resin composition of the present invention comprises (a) a polyimide precursor comprising a structural unit represented by the following general formula (1):
  • R 1 is a tetravalent organic group
  • R 2 is a divalent organic group
  • R 3 and R 4 are independently a hydrogen atom, an alkyl group, a cycloalkyl group or a monovalent organic group having a carbon-carbon unsaturated double bond.
  • the residual stress of the cured film obtained by applying the polyimide precursor represented by the general formula (1) to a substrate, followed by curing by heating is preferably 30 MPa or less when the film thickness of the cured film is 10 ⁇ m, more preferably 27 MPa or less, and further preferably 25 MPa or less. If the residual stress is 30 MPa or less, when a film is formed to have a thickness of 10 ⁇ m after curing, wafer warpage can be suppressed more sufficiently, whereby problems that occur during transfer or securing by sucking of a wafer can be suppressed more sufficiently.
  • the residual stress can be measured by a method in which the warpage of a wafer is measured by means of a thin film stress measurement apparatus (FLX-2320, manufactured by KLA Tencor Japan), and the amount of the warpage is converted to a stress.
  • FLX-2320 thin film stress measurement apparatus
  • the coating film is required to be formed in a thickness of about 20 ⁇ m. Therefore, when a photosensitive resin composition is formed by combining with a compound that generates a radical upon irradiation with active rays, it is important to have a high i-line transmittance.
  • the i-line transmittance is preferably 5% or more, more preferably 8% or more, and further preferably 15% or more, with 30% or more being particularly preferable. If the i-line transmittance is lower than 5%, the i-line does not reach deep inside the film, and radicals are not generated sufficiently, whereby photosensitive properties may be deteriorated; e.g. oozing out of the resin from the substrate of the film at the time of development may occur.
  • the i-line transmittance can be measured by measuring the transmitted UV spectrum by means of a U-3310 spectrophotometer (manufactured by Hitachi, Ltd.).
  • R 1 in the general formula (1) is a structure derived from tetracarboxylic dianhydride used as a raw material.
  • R 1 is preferably pyromellitic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride and 3,3′,4,4′-biphenyltetracarboxylic dianhydride. These can be used singly or in combination of two or more.
  • 3,3′,4,4′-benzophenonetetracarboxylic dianhydride 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,3,5,6-pyridinetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, m-terphenyl-3,3′,4,4′-tetracarboxylic dianhydride, p-terphenyl-3,3′,4,4′-tetracarboxylic dianhydride, 1,1,1,3,3,3-hexafluoro-2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 1,1,1,3,3,3-hexafluoro-2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 1,1,1,3,3,3-hexafluoro-2,2-bis(
  • R 2 in the general formula (1) is a structure derived from diamine used as a raw material. In respect of i-line transmittance, it is preferred that R 2 in the general formula (1) be a divalent organic group represented by the following general formula (5) or (6).
  • R 19 to R 17 are independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 19 to R 17 is a fluorine atom or a trifluoromethyl group, and R 18 and R 19 are independently a fluorine atom or a trifluoromethyl group.
  • R 2 in the general formula (1) be a divalent organic group represented by the general formula (6).
  • the structural unit represented by the general formula (6) is preferably 1 to 100 mol %, more preferably 10 to 90 mol %, and further preferably 30 to 90 mol %.
  • organic group that provides the structure represented by the general formula (5) or (6) in respect of low stress, good i-line transmittance, heat resistance or the like, 2,2′-bis(trifluoromethyl)-4,4′-diaminobiphenyl, 2,2′-bis(fluoro)-4,4′-diaminobiphenyl and 4,4′-diaminooctafluorobiphenyl can be given. These can be used singly or in combination of two or more.
  • a hydrogen atom, an alkyl group including 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an acryloxyalkyl group having 1 to 10 carbon atoms or a methacryloxyalkyl group of which the number of carbon atoms of the alkyl group is 1 to 10 can independently be given.
  • a compound in which at least one of R 3 and R 4 has a carbon-carbon unsaturated double bond such as an acryloxyalkyl group having 1 to 10 carbon atoms or a methacryloxyalkyl group having 1 to 10 carbon atoms be combined with a compound that generates a radical upon irradiation with active rays, whereby cross-linkage between molecular chains by radical polymerization become possible.
  • the component (a) of the present invention can be synthesized by subjecting tetracarboxylic dianhydride and a diamine to addition polymerization. Further, it can also be synthesized by allowing a tetracarboxylic dianhydride represented by the formula (10) to be a diester derivative, converting the derivative to an acid chloride represented by the formula (11), and then reacting with a diamine represented by the formula (12):
  • R 1 to R 4 are as defined in the formula (1).
  • the tetracarboxylic mono(di)ester dichloride represented by the general formula (11) can be obtained by reacting a tetracarboxylic mono(di)ester that is obtained by reacting a tetracraboxylic dianhydride represented by the general formula (10) and a compound represented by the general formula (13) with a chlorinating agent such as thionyl chloride or dichlorooxalic acid.
  • the chlorinating agent normally 2 molar equivalents of a chlorinating agent per mole of tetracarboxylic mono(di)ester are reacted in the presence of a basic compound in an amount twice as large as that of the chlorinating agent.
  • the equivalence may be appropriately adjusted.
  • 1.5 to 2.5 molar equivalents are preferable, 1.6 to 2.4 molar equivalents are more preferable, with 1.7 to 2.3 molar equivalents being further preferable.
  • the equivalence is smaller than 1.5 molar equivalents, the low stress after curing may not be exhibited sufficiently due to a small molecular weight of a polyimide precursor. If the equivalence is larger than 2.5 molar equivalents, a large amount of hydrochloride of the basic compound may remain in the polyimide precursor, and as a result, the electric insulating properties of the polyimide after curing may be lowered.
  • the basic compound pyridine, 4-dimethylaminopyridine, triethylamine or the like can be used. It is preferred that it be used in an amount of 1.5 to 2.5 times as that of the chlorinating agent.
  • the amount of the chlorinating agent is more preferably 1.7 to 2.4 times, further preferably 1.8 to 2.3 times. If the amount is less than 1.5 times, the molecular weight of the polyimide precursor may be decreased, and the stress after curing may not be lowered sufficiently. If the amount is larger than 2.5 times, the polyimide precursor may be colored.
  • the tetracarboxylic dianhydride and the compound represented by the general formula (13) can be synthesized by reacting in the presence of a basic catalyst.
  • a basic catalyst 1,8-diazabicyclo[5.4.0]undeca-7-ene, 1,5-diazabicyclo[4.3.0]nona-5-ene or the like can be given.
  • R 22 is an alkyl group having 1 to 20 carbon atoms or a cycloalkyl group having 3 to 20 carbon atoms.
  • an acryloxyalkyl group of which the number of carbon atoms of the alkyl group is 1 to 10 and a methacryloxyalkyl group of which the number of carbon atoms of the alkyl group is 1 to 10 can be given.
  • methanol, ethanol, n-propanol, isopropanol, n-butanol, 2-butanol, t-butanol, hexanol, cyclohexanol, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, 2-hydroxybutyl acrylate, 2-hydroxybutyl methacrylate, 4-hydroxybutyl acrylate, 4-hydroxybutyl methacrylate or the like can be given. These may be used singly or in combination of two or more.
  • the weight-average molecular weight in terms of polystyrene is preferably 10,000 to 100,000, more preferably 15,000 to 100,000, and further preferably 20,000 to 85,000. If the weight-average molecular weight is 10,000 or more, the stress after curing may tend to be lowered sufficiently. In respect of solubility in a solvent and handling properties of a solution, the weight-average molecular weight is preferably 100,000 or less.
  • the weight-average molecular weight can be measured by the gel permeation chromatography and can be obtained by converting by using a standard polystyrene calibration curve.
  • the molar ratio of tetracarboxylic dianhydride and diamine is normally 1.0. In order to suppress the molecular weight or the terminal residue, it may be conducted at a molar ratio of 0.7 to 1.3. If the molar ratio is 0.7 or less or 1.3 or more, the molecular weight of the resulting polyimide precursor is decreased, and the low stress after curing may not be sufficiently exhibited.
  • the addition polymerization and the condensation reaction and synthesis of a diester derivative and an acid chloride be conducted in an organic solvent.
  • a polar solvent that perfectly dissolves the polyimide precursor is preferable.
  • N-methyl-2-pyrrolidone, N,N-dimethylacetoamide, N,N-dimethylformamide, dimethylsulfoxide, tetramethylurea, hexamethylphosphoric triamide, ⁇ -butyrolactone or the like can be given.
  • ketones, esters, lactones, ethers, halogenated hydrocarbons, hydrocarbons or the like can be used.
  • acetone diethyl ketone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, diethyl oxalate, diethyl malonate, diethyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, tetrahydrofurane, dichloromethane, 1,2-dichloroethane, 1,4-dichlorobutane, trichloroethane, chlorobenzene, o-dichlorobenzene, hexane, heptane, octane, benzene, toluene, xylene or the like can be given.
  • These organic solvents may be used singly or in combination of two or more.
  • heating temperature for converting the polyimide precursor as the component (a) of the present invention into a polyimide by promoting imidization by heating 80 to 450° C. is preferable. Heating temperature is more preferably 100 to 450° C., with 200 to 400° C. being further preferable. If the heating temperature is 80° C. or less, imidization may not proceed sufficiently, resulting in lowered heat resistance. If the heating temperature is 450° C. or higher, polyimide obtained by curing may be deteriorated.
  • Component (b) Compound Represented by General Formula (2)
  • the resin composition of the present invention comprises, as component (b), a compound represented by the following general formula (2).
  • R 5 is an alkyl group having 1 to 4 carbon atoms
  • R 6 is independently a hydroxyl group or an alkyl group having 1 to 4 carbon atoms
  • a is an integer of 0 to 3
  • n is an integer of 1 to 6
  • R 7 is any of a group represented by the following general formula (3) or a group represented by the following general formula (4):
  • R 8 is an alkyl group having 1 to 10 carbon atoms or an organic group derived from hydroxyalkylsilane
  • R 9 is an alkyl group having 1 to 10 carbon atoms, an organic group derived from aminoalkylsilane or a heterocyclic group
  • R 8 and R 9 may independently have a substituent.
  • the resin composition of the present invention can exhibit good adhesiveness to a substrate when forming into a cured film.
  • the reason therefor is assumed to be as follows. During the heat-curing step of the resin film, a protective group of an isocyanate of the compound represented by the general formula (2) is removed, and a highly reactive isocyanate group is regenerated and then reacted with carboxylic acid or an amine at the terminal of a polymer (polyimide precursor), thereby to form a chemical bond.
  • the resin composition of the present invention can exhibit good storage stability.
  • the reason therefor is supposed to be as follows.
  • the protected isocyanate of the compound represented by the general formula (2) is in a state having poor reactivity in which no protective group is removed prior to the heat curing step.
  • the compound represented by the formula (2) is a compound obtained by mixing a compound represented by the formula (14) and a compound having a hydroxyl group or an amino group, followed by addition reaction.
  • R 29 is an alkyl group having 1 to 4 carbon atoms
  • R 39 is independently a hydroxyl group or an alkyl group having 1 to 4 carbon atoms
  • b is an integer of 0 to 3
  • R 28 is an alkylene group having 1 to 6 carbon atoms.
  • a compound in which R 7 is represented by the formula (3) is a compound obtained by reacting a compound represented by the formula (14) with a compound having a hydroxyl group and a compound having hydroxyalkylsilane.
  • This reaction formula is shown as the following formula (15):
  • R is a group in the formula (14) and R′ is an alkyl group having 1 to 10 carbon atoms.
  • a compound in which R 8 in the formula (3) has an organic group derived from hydroxyalkylsilane is obtained.
  • the hydroxyalkylsilane compound bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, N,N-bis(2-hydroxyethyl)-N,N-bis(trimethoxysilylpropyl)ethylenediamine, N-(hydroxymethyl)-N-methylaminopropyltrimethoxysilane, 7-triethoxysilylpropoxy-5-hydroxyflavone, N-(3-triethoxysilylpropyl)-4-hydroxybutylamide, 2-hydroxy-4-(3-methyldiethoxysilylpropoxy)diphenylketone, 1,3-bis(4-hydroxybutyl)tetramethyldisiloxane, 3-(N-acetyl-4-hydroxypropy
  • R 7 is represented by the formula (4) is a compound obtained by reacting the compound represented by the formula (14) with a compound having 1 to 10 carbon atoms and having an amino group, an aminoalkylsilane compound or a heterocyclic compound having an amino group.
  • This reaction formula is shown as the following formula (16):
  • R is a group in the formula (14) and R′ is an alkyl group having 1 to 10 carbon atoms.
  • aminoalkylsilane compound When the aminoalkylsilane compound is reacted with the compound represented by the formula (14), a compound in which R 9 in the formula (4) has an organic group derived from aminoalkylsilane is obtained.
  • aminoalkylsilane compound 4-aminobutyltriethoxysilane, 4-amino-3,3-dimethylbutyltrimethoxysiloxane, N-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane, N-(2-aminoethyl)-4-aminopropylmethyltriethoxysilane or the like can be given.
  • heterocyclic compound having an amino group When a heterocyclic compound having an amino group is reacted with the compound represented by the formula (14), a compound in which R 9 in the formula (4) is a heterocyclic group is obtained.
  • the heterocyclic compound having an amino group 5-aminotetrazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 4-aminopyridine, 2-aminopyridine, 3-aminopyridine, 2,6-diaminopyridine, 3,4-diaminopyridine, 2-aminothiazole, 2-aminobenzothiazole or the like can be given.
  • the reaction represented by the formula (15) and the reaction represented by the formula (16) may be conducted at room temperature or may be reacted in a temperature range of 50° C. to 100° C.
  • the raw materials may be reacted directly or may be reacted by using a solvent such as dimethylformamide, 1,2-diethoxyethane and N-methylpyrrolidone.
  • component (b) comprise at least one of the following compounds.
  • the content of the component (b) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and further preferably 1 to 6 parts by mass relative to 100 parts by mass of the component (a). If the content is 0.1 part by mass or more, more sufficient adhesiveness with the substrate can be imparted. If the content is 20 parts by mass or less, a problem of viscosity increase during storage at room temperature can be suppressed more sufficiently.
  • the resin composition of the present invention may comprise other organic silane compounds than the component (b) in order to further improve adhesiveness with a silicon substrate or the like after curing.
  • organic silane compound ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane, ⁇ -glycidoxypropyltriethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -methacryloxypropyltrimethoxysilane, ⁇ -acryloxypropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, triethoxysilylpropylethylcarbamate, 3-(triethoxysilyl)propyl succinic anhydride, phenyltriethoxysilane, phenyltrimeth
  • Component (c) Compound that Generates Radical Upon Irradiation with Active Rays
  • R 3 or R 4 in the polyimide precursor as the component (a) is a monovalent organic group having a carbon-carbon unsaturated double bond, by dissolving it in a solvent in combination with a compound that generates radical upon irradiation with active rays, it can be a photosensitive resin composition.
  • the composition when a photosensitive resin composition is obtained by containing the component (c), the composition preferably becomes a resin composition having excellent i-line transmittance.
  • an aromatic ketone such as an oxime ester compound mentioned later, benzophenone, N,N′-tetraalkyl-4,4′-diaminobenzophenone such as N,N′-tetramethyl-4,4′-diaminobenzophenone (Michler's ketone), 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1,2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propanone-1 or the like; quinones fused to an aromatic ring such as alkylanthraquinones; a benzoin ether compound such as alkylbenzoin; a benzoin compound such as benzoin and alkylbenzoin; and a benzyl derivative such as benzyl dimethyl ketal can be given.
  • an aromatic ketone such as an oxime ester compound mentioned later, benzophenone, N,N′-tetra
  • an oxime ester compound is preferable.
  • the oxime ester compound mentioned above may preferably be any of the compound represented by the following formula (17), the compound represented by the following formula (18) and the compound represented by the following formula (19).
  • R 31 and R 32 are independently an alkyl group having 1 to 12 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms or a phenyl group. It is preferred that R 31 and R 32 be an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 6 carbon atoms or a phenyl group. It is more preferred that R 31 and R 32 be an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 4 to 6 carbon atoms or a phenyl group. A methyl group, a cyclopentyl group or a phenyl group is further preferable.
  • R 33 is more preferably H, OH, COOH, O(CH 2 )OH, O(CH 2 ) 2 OH, COO(CH 2 )OH or COO(CH 2 ) 2 OH.
  • H, O(CH 2 )OH, O(CH 2 ) 2 OH, COO(CH 2 )OH or COO(CH 2 ) 2 OH with H, O(CH 2 ) 2 OH or COO(CH 2 ) 2 OH being more preferable.
  • R 34 is independently an alkyl group having 1 to 6 carbon atoms, and is preferably a propyl group.
  • R 35 is NO 2 or ArCO (wherein Ar is an aryl group).
  • Ar is an aryl group.
  • a tolyl group is preferable.
  • R 36 and R 37 are independently an alkyl group having 1 to 12 carbon atoms, a phenyl group or a tolyl group, and preferably a methyl group, a phenyl group or a tolyl group.
  • R 38 is an alkyl group having 1 to 6 carbon atoms, and is preferably an ethyl group.
  • R 39 is an organic group having an acetal bond and is preferably a substituent corresponding to R 8 contained in a compound represented by the following formula (19-1), mentioned later.
  • R 40 and R 41 are independently an alkyl group having 1 to 12 carbon atoms, a phenyl group or a tolyl group, and are preferably a methyl group, a phenyl group or a tolyl group, with a methyl group being more preferable.
  • a compound represented by the following formula (17-1) or a compound represented by the following formula (17-2) can be given, for example.
  • the compound represented by the following formula (17-1) is available as IRGACURE OXE-01 (product name, manufactured by BASF Japan, Ltd.)
  • a compound represented by the following formula (18-1) can be given, for example.
  • This compound is available as DFI-091 (product name, manufactured by Daito Chemix Corporation).
  • a compound represented by the following formula (19-1) can be given, for example.
  • This compound is available as Adeka Optomer N-1919 (manufactured by Adaka Corporation).
  • the following compound can also be used.
  • the content thereof is preferably 0.01 to 30 parts by mass, more preferably 0.01 to 20 parts by mass, further preferably 0.01 to 15 parts by mass, and particularly preferably 0.05 to 10 parts by mass relative to 100 parts by mass of the component (a). If the amount is 0.01 parts by mass or more, crosslinking of the exposed part becomes sufficient, whereby more excellent photosensitive properties can be obtained. If the amount is 30 parts by mass or less, the heat resistance of a cured film tends to be further improved.
  • the resin composition of the present invention may contain a solvent as the component (d) according to need.
  • a polar solvent that completely dissolves the polyimide precursor is preferable.
  • N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethyl sulfoxide, tetramethyl urea, hexamethyl phosphoric triamide, ⁇ -butyrolactone, ⁇ -valerolactone, ⁇ -valerolactone, cyclohexanone, cyclopentanone, propylene glycol monomethyl ether acetate, propylene carbonate, ethyl lactate, 1,3-dimethyl-2-imidazolidinone or the like can be given. These can be used singly or in combination of two or more.
  • the resin composition of the present invention may comprise an addition-polymerizable compound as the component (e), if necessary.
  • an addition-polymerizable compound diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate,
  • the content of the addition-polymerizable compound, if contained, is preferably 1 to 100 parts by mass relative to 100 parts by mass of the component (a), more preferably 1 to 75 parts by mass, and further preferably 1 to 50 parts by mass. If the content is 1 part by mass or more, more excellent photosensitive properties can be imparted. If the content is 100 parts by mass or less, the heat resistance of the cured film can be further improved.
  • the resin composition of the present invention may comprise a radical polymerization inhibitor or a radical polymerization retarder.
  • a radical polymerization inhibitor or the radical polymerization retarder examples include p-methoxyphenol, diphenyl-p-benzoquinone, benzoquinone, hydroquinone, pyrogallol, phenothiazine, resorcinol, ortho-dinitrobenzene, para-dinitrobenzene, meta-dinitrobenzene, phenanthraquinone, N-phenyl-2-naphthylamine, cupferron, 2,5-toluquinone, tannic acid, parabenzyl aminophenol, nitrosamine or the like can be given. These may be used singly or in combination of two or more.
  • the content of the radical polymerization inhibitor or the radical polymerization retarder, if contained, is preferably 0.01 to 30 parts by mass, more preferably 0.01 to 10 parts by mass, and further preferably 0.05 to 5 parts by mass relative to 100 parts by mass of the polyimide precursor. If the content is 0.01 parts by mass or more, storage stability is improved. If the content is 30 parts by mass or less, heat resistance of the cured film can be further improved.
  • the resin composition of the present invention may essentially consist of the components (a) and (b) mentioned above, optionally the components (c) to (e) mentioned above, and at least one of the radical polymerization inhibitor and the radical polymerization retarder.
  • the resin composition of the present invention may consist only of these components.
  • the “essentially consist of” means that the above-mentioned composition comprise mainly the components (a) and (b) mentioned above, optionally the components (c) to (e) mentioned above, and at least one of the radical polymerization inhibitor and the radical polymerization retarder, and that the amount thereof is 95 wt % or more or 98 wt % or more of the entire raw material, for example.
  • the cured film of the present invention is a cured film formed of the resin composition mentioned above.
  • the patterned cured film of the present invention is a patterned cured film formed from the resin composition mentioned above.
  • the patterned cured film of the present invention is formed when the above-mentioned resin composition comprises the component (c).
  • the method for producing a patterned cured film of the present invention comprises a step of applying the above-mentioned resin composition to a substrate, followed by drying, thereby to form a coating film, and a step of irradiating the coating film with active rays, followed by development, thereby to obtain a patterned resin film, and a step of subjecting the patterned resin film to a heat treatment.
  • the method for producing a patterned cured film according to the present invention comprises a step of applying the above-mentioned resin composition to a substrate, followed by drying, thereby to form a coating film.
  • a dipping method, a spray method, a screen printing method, a spin coating method or the like can be given.
  • the base material silicon wafer, metal substrate, ceramic substrate or the like can be given. Since the resin composition of the present invention is capable of forming a low-stress cured film, it can preferably be applied to silicon wafer having a large diameter (e.g. 12 inches or larger).
  • the drying step it is possible to form a coating film having no tackiness by removing the solvent by heating.
  • an apparatus such as DATAPLATE (Digital Hotplate, manufactured by PMC, Co. Ltd.) can be used.
  • the drying temperature is preferably 90 to 130° C., and the drying time is preferably 100 to 400 seconds.
  • the method for producing a patterned cured film of the present invention comprises a step of irradiating the coating film with active rays, followed by development, thereby to obtain a patterned resin film. As a result, a resin film in which a desired pattern is formed can be obtained.
  • the resin composition of the invention is preferable for irradiation with i-line.
  • active rays to be irradiated ultraviolet rays, far ultraviolet rays, visible rays, electron beams, X-rays or the like can be used.
  • the developer is not particularly limited.
  • the developer include a flame-retardant solvent such as 1,1,1-trichloroethane; an alkaline aqueous solution such as a sodium carbonate aqueous solution and a tetramethylammonium hydroxide aqueous solution; a good solvent such as N,N-dimethylformamide, dimethyl sulfoxide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, cyclopentanone, ⁇ -butyrolactone, and an acetic acid ester; a mixed solvent that includes the good solvent and a poor solvent such as a lower alcohol, water, or an aromatic hydrocarbon; and the like.
  • the patterned resin film is optionally rinsed with a poor solvent, or the like.
  • the method for producing a patterned cured film of the present invention comprises a step of subjecting a patterned resin film to a heat treatment.
  • a vertical thermal diffusion furnace manufactured by Koyo Lindberg, Ltd. can be used. It is preferred that the heat treatment be conducted at a temperature of 80 to 400° C. for 5 to 300 minutes.
  • imidization of the polyimide precursor in the resin composition can proceed, whereby a patterned cured film containing a polyimide resin can be obtained.
  • the method for producing a cured film of the present invention comprises a step of applying a resin composition to a substrate, followed by drying, thereby to form a coating film and a step of subjecting the coating film to a heat treatment.
  • the step of forming a coating film and the step of subjecting a coating film to a heat treatment may be conducted in the same way as in the above-mentioned method for producing a patterned cured film.
  • the cured film of the present invention may be a cured film in which no pattern is formed.
  • the cured film or the patterned cured film of the present invention obtained as above can be used as a surface protective layer, an interlayer insulating layer, a re-wiring layer or the like of a semiconductor device.
  • FIG. 1 is a schematic cross-sectional view illustrating a semiconductor device according to one embodiment of the invention that includes a redistribution structure.
  • the semiconductor device according to this embodiment has a multilayer wiring structure.
  • An Al wiring layer 2 is formed on an interlayer insulating layer (interlayer insulating film) 1 .
  • An insulating layer (insulating film) 3 (e.g., P—SiN layer) is formed on the Al wiring layer 2 , and a surface protective layer (surface protective film) 4 is formed on the insulating layer 3 .
  • a redistribution layer 6 is formed from a pad 5 of the wiring layer 2 .
  • the redistribution layer 6 extends to the upper side of a core 8 that is connected to a conductive ball 7 (external connection terminal) that is formed of solder, gold, or the like.
  • a cover coat layer 9 is formed on the surface protective layer 4 .
  • the redistribution layer 6 is connected to the conductive ball 7 through a barrier metal 10 .
  • a collar 11 is provided to hold the conductive ball 7 .
  • an underfill 12 may be provided to further reduce stress.
  • the cured film or the patterned cured film of the present invention can be used for package applications, i.e. a cover coat material, a redistribution core material, a ball (e.g. solder) collar material, an underfill material, etc., in the above-mentioned embodiment.
  • package applications i.e. a cover coat material, a redistribution core material, a ball (e.g. solder) collar material, an underfill material, etc.
  • the semiconductor device that includes the cured film or the patterned cured film of the present invention has significantly high reliability.
  • the electronic part of the present invention is not particularly restricted as long as it has a cover coat, a redistribution core, a ball (e.g. solder) collar material, an underfill used in a flip chip or the like, that use the cured film or the patterned cured film of the present invention, and may take various structures.
  • polymer I This polymer is referred to as polymer I.
  • 1 g of polymer I was dissolved in 1.5 g of N-methylpyrrolidone, and the resultant was applied to a glass substrate by spin coating. Then, the substrate was heated on a hot plate of 100° C. for 180 seconds to evaporate the solvent, whereby a 20 ⁇ m-thick coating film was formed. The i-line transmittance of the resulting coating film was 17%.
  • polymer II This polymer is referred to as polymer II.
  • 1 g of the polymer II was dissolved in 1.5 g of N-methylpyrrolidone and the resultant was applied to a glass substrate by spin coating. Then, the substrate was heated on a hot plate of 100° C. for 180 seconds to evaporate the solvent, whereby a 20 ⁇ m-thick coating film was formed. The i-line transmittance of the resulting coating film was 60%.
  • polymer III This polymer is referred to as polymer III. 1 g of the polymer III was dissolved in 1.5 g of N-methylpyrrolidone and applied to a glass substrate by spin coating. Then, the substrate was heated on a hot plate of 100° C. for 180 seconds to evaporate the solvent, whereby a 20 ⁇ m-thick coating film was formed. The i-line transmittance of the resulting coating film was 30%.
  • the weight-average molecular weight in terms of standard polystyrene was 34,000.
  • This polymer is referred to as polymer IV.
  • 1 g of the polymer IV was dissolved in 1.5 g of N-methylpyrrolidone and the resultant was applied to a glass substrate by spin coating. Then, the substrate was heated on a hot plate of 100° C. for 180 seconds to evaporate the solvent, whereby a 20 ⁇ m-thick coating film was formed.
  • the i-line transmittance of the resulting coating film was 15%.
  • polymer V This polymer is referred to as polymer V.
  • 1 g of the polymer V was dissolved in 1.5 g of N-methylpyrrolidone and the resultant was applied to a glass substrate by spin coating. Then, the substrate was heated on a hot plate of 100° C. for 180 seconds to evaporate the solvent, whereby a 20 ⁇ m-thick coating film was formed. The i-line transmittance of the resulting coating film was 40%.
  • polymer VI This polymer is referred to as polymer VI.
  • 1 g of the polymer VI was dissolved in 1.5 g of N-methylpyrrolidone and the resultant was applied to a glass substrate by spin coating. Then, the substrate was heated on a hot plate of 100° C. for 180 seconds to evaporate the solvent, whereby a 20 ⁇ m-thick coating film was formed. The i-line transmittance of the resulting coating film was 1%.
  • Measurement apparatus detector L4000 UV manufactured by Hitachi Ltd.
  • the i-line transmittance of the polymers I to VII was measured by using a U-3310 spectrophotometer manufactured by Hitachi Ltd.
  • the reaction solution was heated in an oil bath of 60° C. for 3 hours.
  • a peak derived from an isocyanate group at around 2260 cm ⁇ 1 disappeared and a peak derived from a NH group appeared at around 3370 cm ⁇ 1 .
  • reaction product was confirmed by disappearance of KBE-9007 by thin layer column chromatography using silica gel as a support (eluent: hexane, coupler: iodine). From the facts mentioned above, it was confirmed that an adduct (b1) of bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane and 3-isocyanatopropyltriethoxysilane and an adduct (b3) of ethanol and 3-isocyanatopropyltriethoxysilane were obtained.
  • reaction product was confirmed by disappearance of KBE-9007 by thin layer column chromatography using silica gel as a support (eluent: hexane, coupler: iodide). From the facts mentioned above, it was confirmed that an adduct (b4) of 2-ethylhexylamine and 3-isocyanatopropyltriethoxysilane was obtained.
  • the IR spectrum was measured by means of FTS-3000MX (manufactured by Digital Laboratory, Inc.) and by adding dropwise 0.2 g of the reaction solution to a PET film.
  • the numeral in parenthesis in each column of component (b) and component (c) indicates the amount added (parts by mass) relative to 100 parts by mass of the component (a).
  • As the solvent N-methylpyrrolidone was used, and the amount thereof was 1.5 times (150 parts by mass) relative to 100 parts by mass of the component (a).
  • tetraethylene glycol dimethacrylate was compounded in an amount of 20 parts by mass relative to the component (a).
  • the resulting photosensitive resin composition was applied by spin coating to a 6-inch silicon wafer.
  • the wafer was heated on a hot plate of 100° C. for 3 minutes to evaporate the solvent, whereby a coating film of which the film thickness after curing became about 10 ⁇ m was obtained.
  • the coating film was cured by heating in nitrogen atmosphere at 375° C. for 1 hour, whereby a polyimide film (cured film) was obtained.
  • the residual stress of the polyimide film after curing was measured at room temperature by means of a stress measurement apparatus for a thin film (FLX-2320 manufactured by KLA Tencor Corporation).
  • the resulting photosensitive resin composition was applied by spin coating to a 6-inch silicon wafer.
  • the wafer was heated on a hot plate of 100° C. for 3 minutes to evaporate the solvent, whereby a coating film of which the film thickness after curing became about 10 ⁇ m was obtained.
  • the coating film was cured by heating in nitrogen atmosphere at 375° C. for 1 hour, whereby a polyimide film (cured film) was obtained.
  • the polyimide film was subjected to a cross cut test (JIS K5400-8.5 (JIS D0202)).
  • a case where 95 grids of the polyimide film remained on the substrate was evaluated as A
  • B a case where 85 to 94 grids of the polyimide film remained on the substrate
  • C a case where 84 or less of grids remained on the substrate
  • the resulting resin composition was applied by spin coating to a 6-inch silicon wafer.
  • the resultant was heated on a hot plate of 100° C. for 3 minutes to evaporate the solvent, whereby a coating film having a film thickness of about 10 ⁇ m was obtained.
  • the film thickness at this time was taken as the initial film thickness.
  • the resin composition was applied to a 6-inch wafer.
  • the wafer was heated on a hot plate of 100° C. for 3 minutes to evaporate the solvent, whereby a coating film was obtained.
  • the resin composition was applied to a 6-inch wafer by spin coating.
  • the wafer was heated on a hot plate of 100° C. for 3 minutes to evaporate the solvent, whereby a coating film having a thickness of 10 ⁇ m was obtained.
  • the component (b) is a compound represented by the following structural formula.
  • the component (c) is a compound shown below.
  • one having a fluorine-substituted benzidine skeleton as a diamine component has high i-line transmittance.
  • a resin composition having a low stress can be obtained.
  • a component different from the component (b) of the present invention was used, attainment of both adhesiveness and storage stability could not be realized.
  • the resin composition of the present invention can be used for package applications such as a cover coat material, a core material for redistribution, a ball (e.g. solder) collar material, an underfill material or the like that form an electronic part of a semiconductor device or the like.
  • a cover coat material such as a cover coat material, a core material for redistribution, a ball (e.g. solder) collar material, an underfill material or the like that form an electronic part of a semiconductor device or the like.

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  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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JP2018076506A (ja) 2018-05-17
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WO2014097594A1 (ja) 2014-06-26
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