TWM495617U - 用於邊緣關鍵尺寸均勻性控制的處理套組 - Google Patents
用於邊緣關鍵尺寸均勻性控制的處理套組 Download PDFInfo
- Publication number
- TWM495617U TWM495617U TW103207716U TW103207716U TWM495617U TW M495617 U TWM495617 U TW M495617U TW 103207716 U TW103207716 U TW 103207716U TW 103207716 U TW103207716 U TW 103207716U TW M495617 U TWM495617 U TW M495617U
- Authority
- TW
- Taiwan
- Prior art keywords
- ring
- substrate
- top surface
- ring assembly
- processing chamber
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 140
- 239000000919 ceramic Substances 0.000 claims abstract description 24
- 210000003423 ankle Anatomy 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 26
- 230000008569 process Effects 0.000 abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000010453 quartz Substances 0.000 description 75
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 75
- 239000007789 gas Substances 0.000 description 40
- 150000002500 ions Chemical class 0.000 description 37
- 238000005530 etching Methods 0.000 description 27
- 229910052760 oxygen Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 238000005086 pumping Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Plasma Technology (AREA)
- Ceramic Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361841194P | 2013-06-28 | 2013-06-28 | |
| US14/020,774 US20150001180A1 (en) | 2013-06-28 | 2013-09-06 | Process kit for edge critical dimension uniformity control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM495617U true TWM495617U (zh) | 2015-02-11 |
Family
ID=52114576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103207716U TWM495617U (zh) | 2013-06-28 | 2014-05-02 | 用於邊緣關鍵尺寸均勻性控制的處理套組 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20150001180A1 (enExample) |
| JP (2) | JP6867159B2 (enExample) |
| KR (1) | KR102190302B1 (enExample) |
| CN (1) | CN105283944B (enExample) |
| TW (1) | TWM495617U (enExample) |
| WO (1) | WO2014209489A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI571909B (zh) * | 2015-10-22 | 2017-02-21 | Ａｓｍ知識產權私人控股有限公司 | 包括沉積設備的半導體製造系統 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9691625B2 (en) * | 2015-11-04 | 2017-06-27 | Lam Research Corporation | Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level |
| JP7098273B2 (ja) | 2016-03-04 | 2022-07-11 | アプライド マテリアルズ インコーポレイテッド | ユニバーサルプロセスキット |
| US9947517B1 (en) * | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US12293902B2 (en) | 2018-01-19 | 2025-05-06 | Applied Materials, Inc. | Process kit for a substrate support |
| US11387134B2 (en) * | 2018-01-19 | 2022-07-12 | Applied Materials, Inc. | Process kit for a substrate support |
| US20190287835A1 (en) * | 2018-02-01 | 2019-09-19 | Yield Engineering Systems, Inc. | Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same |
| JP7138514B2 (ja) * | 2018-08-22 | 2022-09-16 | 東京エレクトロン株式会社 | 環状部材、プラズマ処理装置及びプラズマエッチング方法 |
| KR102864012B1 (ko) | 2018-12-03 | 2025-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 척킹 및 아크 발생 성능이 개선된 정전 척 설계 |
| JP7641972B2 (ja) * | 2020-02-04 | 2025-03-07 | ラム リサーチ コーポレーション | プラズマ処理システムのためのｒｆ信号フィルタ構成 |
| CN115087758A (zh) | 2020-02-11 | 2022-09-20 | 朗姆研究公司 | 用于控制晶片晶边/边缘上的沉积的承载环设计 |
| CN111508803B (zh) * | 2020-04-23 | 2023-01-17 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室、晶片边缘保护方法及半导体设备 |
| CN113802111B (zh) * | 2020-06-13 | 2023-10-31 | 拓荆科技股份有限公司 | 使用等离子体处理衬底的设备及改善晶圆薄膜表面形貌的方法 |
| KR20220104300A (ko) * | 2020-06-25 | 2022-07-26 | 램 리써치 코포레이션 | 방사상으로 가변된 플라즈마 임피던스를 갖는 캐리어 링들 |
| FI130020B (en) * | 2021-05-10 | 2022-12-30 | Picosun Oy | Substrate processing apparatus and method |
| US20230066418A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focus ring for a plasma-based semiconductor processing tool |
| KR102744850B1 (ko) * | 2022-08-10 | 2024-12-19 | 솔믹스 주식회사 | 포커스 링 및 이를 포함하는 플라즈마 식각장치 |
| CN115910738B (zh) * | 2022-11-01 | 2025-02-18 | 上海积塔半导体有限公司 | 一种通过改变部件尺寸来调节Emax工艺腔体均匀性的方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3121524B2 (ja) * | 1995-06-07 | 2001-01-09 | 東京エレクトロン株式会社 | エッチング装置 |
| US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| JP4602545B2 (ja) * | 1997-09-16 | 2010-12-22 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバの半導体ワークピース用シュラウド |
| JP3296300B2 (ja) * | 1998-08-07 | 2002-06-24 | ウシオ電機株式会社 | 光照射式加熱装置 |
| JP2002529594A (ja) * | 1998-10-29 | 2002-09-10 | アプライド マテリアルズ インコーポレイテッド | 半導体ウエハ処理システムにおいて加工物を貫通して電力を結合する装置 |
| JP3764639B2 (ja) * | 2000-09-13 | 2006-04-12 | 株式会社日立製作所 | プラズマ処理装置および半導体装置の製造方法 |
| JP4676074B2 (ja) * | 2001-02-15 | 2011-04-27 | 東京エレクトロン株式会社 | フォーカスリング及びプラズマ処理装置 |
| JP2003257935A (ja) * | 2002-03-05 | 2003-09-12 | Tokyo Electron Ltd | プラズマ処理装置 |
| US7882800B2 (en) * | 2001-12-13 | 2011-02-08 | Tokyo Electron Limited | Ring mechanism, and plasma processing device using the ring mechanism |
| JP4209618B2 (ja) * | 2002-02-05 | 2009-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びリング部材 |
| US6868302B2 (en) * | 2002-03-25 | 2005-03-15 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus |
| JP4286025B2 (ja) * | 2003-03-03 | 2009-06-24 | 川崎マイクロエレクトロニクス株式会社 | 石英治具の再生方法、再生使用方法および半導体装置の製造方法 |
| JP2005167088A (ja) * | 2003-12-04 | 2005-06-23 | Matsushita Electric Ind Co Ltd | ドライエッチング装置及びドライエッチング方法 |
| US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
| JP2005303099A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| JP2006086230A (ja) * | 2004-09-14 | 2006-03-30 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
| US7520969B2 (en) * | 2006-03-07 | 2009-04-21 | Applied Materials, Inc. | Notched deposition ring |
| KR100794308B1 (ko) * | 2006-05-03 | 2008-01-11 | 삼성전자주식회사 | 반도체 플라즈마 장치 |
| US8440049B2 (en) * | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
| US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
| JP5035884B2 (ja) * | 2007-03-27 | 2012-09-26 | 東京エレクトロン株式会社 | 熱伝導シート及びこれを用いた被処理基板の載置装置 |
| KR101645043B1 (ko) * | 2007-10-31 | 2016-08-02 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법 |
| JP2010045200A (ja) * | 2008-08-13 | 2010-02-25 | Tokyo Electron Ltd | フォーカスリング、プラズマ処理装置及びプラズマ処理方法 |
| JP2011035026A (ja) * | 2009-07-30 | 2011-02-17 | Seiko Epson Corp | ドライエッチング装置、半導体装置の製造方法、制御リング |
| JP5719599B2 (ja) * | 2011-01-07 | 2015-05-20 | 東京エレクトロン株式会社 | 基板処理装置 |
-
2013
- 2013-09-06 US US14/020,774 patent/US20150001180A1/en not_active Abandoned
-
2014
- 2014-04-30 CN CN201480033790.1A patent/CN105283944B/zh active Active
- 2014-04-30 WO PCT/US2014/036010 patent/WO2014209489A1/en not_active Ceased
- 2014-04-30 JP JP2016523735A patent/JP6867159B2/ja active Active
- 2014-04-30 KR KR1020167000788A patent/KR102190302B1/ko active Active
- 2014-05-02 TW TW103207716U patent/TWM495617U/zh not_active IP Right Cessation
-
2020
- 2020-09-30 JP JP2020164401A patent/JP2021010016A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI571909B (zh) * | 2015-10-22 | 2017-02-21 | Ａｓｍ知識產權私人控股有限公司 | 包括沉積設備的半導體製造系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6867159B2 (ja) | 2021-04-28 |
| KR102190302B1 (ko) | 2020-12-11 |
| CN105283944B (zh) | 2018-04-27 |
| CN105283944A (zh) | 2016-01-27 |
| JP2016530705A (ja) | 2016-09-29 |
| JP2021010016A (ja) | 2021-01-28 |
| KR20160029073A (ko) | 2016-03-14 |
| US20150001180A1 (en) | 2015-01-01 |
| WO2014209489A1 (en) | 2014-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4K | Annulment or lapse of a utility model due to non-payment of fees |