KR102190302B1 - 엣지 임계 치수 균일성 제어를 위한 프로세스 키트 - Google Patents

엣지 임계 치수 균일성 제어를 위한 프로세스 키트 Download PDF

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Publication number
KR102190302B1
KR102190302B1 KR1020167000788A KR20167000788A KR102190302B1 KR 102190302 B1 KR102190302 B1 KR 102190302B1 KR 1020167000788 A KR1020167000788 A KR 1020167000788A KR 20167000788 A KR20167000788 A KR 20167000788A KR 102190302 B1 KR102190302 B1 KR 102190302B1
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South Korea
Prior art keywords
ring
top surface
substrate
ring assembly
silicon
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KR1020167000788A
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Korean (ko)
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KR20160029073A (ko
Inventor
케니 린 도안
제이슨 델라 로사
하미드 누르바크시
종문 김
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20160029073A publication Critical patent/KR20160029073A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H01L21/02315—
    • H01L21/0234—
    • H01L21/67207—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Ceramic Engineering (AREA)
KR1020167000788A 2013-06-28 2014-04-30 엣지 임계 치수 균일성 제어를 위한 프로세스 키트 Active KR102190302B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361841194P 2013-06-28 2013-06-28
US61/841,194 2013-06-28
US14/020,774 2013-09-06
US14/020,774 US20150001180A1 (en) 2013-06-28 2013-09-06 Process kit for edge critical dimension uniformity control
PCT/US2014/036010 WO2014209489A1 (en) 2013-06-28 2014-04-30 Process kit for edge critical dimension uniformity control

Publications (2)

Publication Number Publication Date
KR20160029073A KR20160029073A (ko) 2016-03-14
KR102190302B1 true KR102190302B1 (ko) 2020-12-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167000788A Active KR102190302B1 (ko) 2013-06-28 2014-04-30 엣지 임계 치수 균일성 제어를 위한 프로세스 키트

Country Status (6)

Country Link
US (1) US20150001180A1 (enExample)
JP (2) JP6867159B2 (enExample)
KR (1) KR102190302B1 (enExample)
CN (1) CN105283944B (enExample)
TW (1) TWM495617U (enExample)
WO (1) WO2014209489A1 (enExample)

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US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
JP7098273B2 (ja) 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11387134B2 (en) * 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US20190287835A1 (en) * 2018-02-01 2019-09-19 Yield Engineering Systems, Inc. Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same
US12531210B2 (en) 2018-04-20 2026-01-20 Lam Research Corporation Edge exclusion control
JP7138514B2 (ja) * 2018-08-22 2022-09-16 東京エレクトロン株式会社 環状部材、プラズマ処理装置及びプラズマエッチング方法
JP7541005B2 (ja) 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
JP7641972B2 (ja) * 2020-02-04 2025-03-07 ラム リサーチ コーポレーション プラズマ処理システムのためのｒｆ信号フィルタ構成
CN115087758A (zh) 2020-02-11 2022-09-20 朗姆研究公司 用于控制晶片晶边/边缘上的沉积的承载环设计
CN111508803B (zh) * 2020-04-23 2023-01-17 北京北方华创微电子装备有限公司 半导体工艺腔室、晶片边缘保护方法及半导体设备
CN113802111B (zh) * 2020-06-13 2023-10-31 拓荆科技股份有限公司 使用等离子体处理衬底的设备及改善晶圆薄膜表面形貌的方法
WO2021262583A1 (en) * 2020-06-25 2021-12-30 Lam Research Corporation Carrier rings with radially-varied plasma impedance
FI130020B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool
KR102744850B1 (ko) * 2022-08-10 2024-12-19 솔믹스 주식회사 포커스 링 및 이를 포함하는 플라즈마 식각장치
CN115910738B (zh) * 2022-11-01 2025-02-18 上海积塔半导体有限公司 一种通过改变部件尺寸来调节Emax工艺腔体均匀性的方法

Citations (1)

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JP2011035026A (ja) * 2009-07-30 2011-02-17 Seiko Epson Corp ドライエッチング装置、半導体装置の製造方法、制御リング

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JP3121524B2 (ja) * 1995-06-07 2001-01-09 東京エレクトロン株式会社 エッチング装置
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
WO1999014788A1 (en) * 1997-09-16 1999-03-25 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP3296300B2 (ja) * 1998-08-07 2002-06-24 ウシオ電機株式会社 光照射式加熱装置
WO2000026939A1 (en) * 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
JP3764639B2 (ja) * 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
WO2003054947A1 (fr) * 2001-12-13 2003-07-03 Tokyo Electron Limited Mecanisme en anneau, et dispositif de traitement de plasma utilisant ce mecanisme en anneau
JP2003257935A (ja) * 2002-03-05 2003-09-12 Tokyo Electron Ltd プラズマ処理装置
US6868302B2 (en) * 2002-03-25 2005-03-15 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
JP2005167088A (ja) * 2003-12-04 2005-06-23 Matsushita Electric Ind Co Ltd ドライエッチング装置及びドライエッチング方法
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2006086230A (ja) * 2004-09-14 2006-03-30 Hitachi Kokusai Electric Inc 半導体製造装置
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
KR100794308B1 (ko) * 2006-05-03 2008-01-11 삼성전자주식회사 반도체 플라즈마 장치
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JP5035884B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 熱伝導シート及びこれを用いた被処理基板の載置装置
JP5567486B2 (ja) * 2007-10-31 2014-08-06 ラム リサーチ コーポレーション 窒化シリコン−二酸化シリコン高寿命消耗プラズマ処理構成部品
JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
JP5719599B2 (ja) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2011035026A (ja) * 2009-07-30 2011-02-17 Seiko Epson Corp ドライエッチング装置、半導体装置の製造方法、制御リング

Also Published As

Publication number Publication date
JP2016530705A (ja) 2016-09-29
JP6867159B2 (ja) 2021-04-28
WO2014209489A1 (en) 2014-12-31
KR20160029073A (ko) 2016-03-14
CN105283944A (zh) 2016-01-27
TWM495617U (zh) 2015-02-11
CN105283944B (zh) 2018-04-27
JP2021010016A (ja) 2021-01-28
US20150001180A1 (en) 2015-01-01

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