KR102190302B1 - 엣지 임계 치수 균일성 제어를 위한 프로세스 키트 - Google Patents

엣지 임계 치수 균일성 제어를 위한 프로세스 키트 Download PDF

Info

Publication number
KR102190302B1
KR102190302B1 KR1020167000788A KR20167000788A KR102190302B1 KR 102190302 B1 KR102190302 B1 KR 102190302B1 KR 1020167000788 A KR1020167000788 A KR 1020167000788A KR 20167000788 A KR20167000788 A KR 20167000788A KR 102190302 B1 KR102190302 B1 KR 102190302B1
Authority
KR
South Korea
Prior art keywords
ring
top surface
substrate
ring assembly
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167000788A
Other languages
English (en)
Korean (ko)
Other versions
KR20160029073A (ko
Inventor
케니 린 도안
제이슨 델라 로사
하미드 누르바크시
종문 김
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20160029073A publication Critical patent/KR20160029073A/ko
Application granted granted Critical
Publication of KR102190302B1 publication Critical patent/KR102190302B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma Technology (AREA)
  • Ceramic Engineering (AREA)
KR1020167000788A 2013-06-28 2014-04-30 엣지 임계 치수 균일성 제어를 위한 프로세스 키트 Active KR102190302B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361841194P 2013-06-28 2013-06-28
US61/841,194 2013-06-28
US14/020,774 2013-09-06
US14/020,774 US20150001180A1 (en) 2013-06-28 2013-09-06 Process kit for edge critical dimension uniformity control
PCT/US2014/036010 WO2014209489A1 (en) 2013-06-28 2014-04-30 Process kit for edge critical dimension uniformity control

Publications (2)

Publication Number Publication Date
KR20160029073A KR20160029073A (ko) 2016-03-14
KR102190302B1 true KR102190302B1 (ko) 2020-12-11

Family

ID=52114576

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167000788A Active KR102190302B1 (ko) 2013-06-28 2014-04-30 엣지 임계 치수 균일성 제어를 위한 프로세스 키트

Country Status (6)

Country Link
US (1) US20150001180A1 (enExample)
JP (2) JP6867159B2 (enExample)
KR (1) KR102190302B1 (enExample)
CN (1) CN105283944B (enExample)
TW (1) TWM495617U (enExample)
WO (1) WO2014209489A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
JP3210105U (ja) 2016-03-04 2017-04-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ユニバーサルプロセスキット
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11387134B2 (en) * 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US20190287835A1 (en) * 2018-02-01 2019-09-19 Yield Engineering Systems, Inc. Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same
JP7138514B2 (ja) * 2018-08-22 2022-09-16 東京エレクトロン株式会社 環状部材、プラズマ処理装置及びプラズマエッチング方法
JP7541005B2 (ja) 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
WO2021158451A1 (en) * 2020-02-04 2021-08-12 Lam Research Corporation Radiofrequency signal filter arrangement for plasma processing system
KR20220010074A (ko) 2020-02-11 2022-01-25 램 리써치 코포레이션 웨이퍼 베벨/에지 상의 증착을 제어하기 위한 캐리어 링 설계들
CN111508803B (zh) * 2020-04-23 2023-01-17 北京北方华创微电子装备有限公司 半导体工艺腔室、晶片边缘保护方法及半导体设备
CN113802111B (zh) * 2020-06-13 2023-10-31 拓荆科技股份有限公司 使用等离子体处理衬底的设备及改善晶圆薄膜表面形貌的方法
WO2021262583A1 (en) * 2020-06-25 2021-12-30 Lam Research Corporation Carrier rings with radially-varied plasma impedance
FI130020B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool
KR102744850B1 (ko) * 2022-08-10 2024-12-19 솔믹스 주식회사 포커스 링 및 이를 포함하는 플라즈마 식각장치
CN115910738B (zh) * 2022-11-01 2025-02-18 上海积塔半导体有限公司 一种通过改变部件尺寸来调节Emax工艺腔体均匀性的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011035026A (ja) * 2009-07-30 2011-02-17 Seiko Epson Corp ドライエッチング装置、半導体装置の製造方法、制御リング

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3121524B2 (ja) * 1995-06-07 2001-01-09 東京エレクトロン株式会社 エッチング装置
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP4602545B2 (ja) * 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド プラズマチャンバの半導体ワークピース用シュラウド
JP3296300B2 (ja) * 1998-08-07 2002-06-24 ウシオ電機株式会社 光照射式加熱装置
WO2000026939A1 (en) * 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
JP3764639B2 (ja) * 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
JP2003257935A (ja) * 2002-03-05 2003-09-12 Tokyo Electron Ltd プラズマ処理装置
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
US6868302B2 (en) * 2002-03-25 2005-03-15 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
JP2005167088A (ja) * 2003-12-04 2005-06-23 Matsushita Electric Ind Co Ltd ドライエッチング装置及びドライエッチング方法
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2006086230A (ja) * 2004-09-14 2006-03-30 Hitachi Kokusai Electric Inc 半導体製造装置
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
KR100794308B1 (ko) * 2006-05-03 2008-01-11 삼성전자주식회사 반도체 플라즈마 장치
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
JP5035884B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 熱伝導シート及びこれを用いた被処理基板の載置装置
WO2009058235A2 (en) * 2007-10-31 2009-05-07 Lam Research Corporation High lifetime consumable silicon nitride-silicon dioxide plasma processing components
JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
JP5719599B2 (ja) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011035026A (ja) * 2009-07-30 2011-02-17 Seiko Epson Corp ドライエッチング装置、半導体装置の製造方法、制御リング

Also Published As

Publication number Publication date
US20150001180A1 (en) 2015-01-01
CN105283944B (zh) 2018-04-27
WO2014209489A1 (en) 2014-12-31
JP2021010016A (ja) 2021-01-28
CN105283944A (zh) 2016-01-27
KR20160029073A (ko) 2016-03-14
TWM495617U (zh) 2015-02-11
JP2016530705A (ja) 2016-09-29
JP6867159B2 (ja) 2021-04-28

Similar Documents

Publication Publication Date Title
KR102190302B1 (ko) 엣지 임계 치수 균일성 제어를 위한 프로세스 키트
JP6853038B2 (ja) Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
TWI433215B (zh) 基材清洗室及清潔與調節之方法
CN113039626B (zh) 边缘环的温度及偏压控制
CN205984889U (zh) 用于斜面聚合物减少的边缘环
EP2819151B1 (en) Plasma etching method and plasma etching apparatus
US20140017900A1 (en) Plasma etching apparatus and plasma etching method
KR20190068490A (ko) 하단 링 및 중간 에지 링
US9263239B1 (en) Etching method of multilayered film
JP5808750B2 (ja) 傾斜側壁を備える静電チャック
KR102505154B1 (ko) 에칭 방법
KR20100128285A (ko) 유동 이퀄라이저 및 하부 라이너를 구비한 에칭 챔버
KR20160117261A (ko) 기울어진 한정 링들을 갖는 플라즈마 프로세싱 시스템들 및 구조체들
US10553442B2 (en) Etching method
JP2012507174A (ja) 低い浸食感度を有するプロセスキット
JP7427108B2 (ja) プラズマチャンバ内で使用するための低抵抗閉じ込めライナ
JP2023545532A (ja) 粒子制御のためのチャンバ構成及びプロセス
TWI889733B (zh) 基板處理方法及基板處理裝置
JP7742405B2 (ja) 処理チャンバ堆積閉じ込め
TWI874452B (zh) 基板處理方法、半導體元件之製造方法及電漿處理裝置
US20220356584A1 (en) Substrate processing method and substrate processing apparatus
TWI798856B (zh) 用於斜面背部沉積消除的半導體處理系統及方法
TW202146694A (zh) 具有用於排放晶圓邊緣氣體的流動路徑的排除環

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6