CN105283944B - 用于边缘关键尺寸均匀性控制的工艺套件 - Google Patents

用于边缘关键尺寸均匀性控制的工艺套件 Download PDF

Info

Publication number
CN105283944B
CN105283944B CN201480033790.1A CN201480033790A CN105283944B CN 105283944 B CN105283944 B CN 105283944B CN 201480033790 A CN201480033790 A CN 201480033790A CN 105283944 B CN105283944 B CN 105283944B
Authority
CN
China
Prior art keywords
ring
substrate
silicon
top surface
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480033790.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN105283944A (zh
Inventor
K·L·多恩
J·德拉罗萨
H·诺巴卡施
J·M·金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN105283944A publication Critical patent/CN105283944A/zh
Application granted granted Critical
Publication of CN105283944B publication Critical patent/CN105283944B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma Technology (AREA)
  • Ceramic Engineering (AREA)
CN201480033790.1A 2013-06-28 2014-04-30 用于边缘关键尺寸均匀性控制的工艺套件 Active CN105283944B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361841194P 2013-06-28 2013-06-28
US61/841,194 2013-06-28
US14/020,774 2013-09-06
US14/020,774 US20150001180A1 (en) 2013-06-28 2013-09-06 Process kit for edge critical dimension uniformity control
PCT/US2014/036010 WO2014209489A1 (en) 2013-06-28 2014-04-30 Process kit for edge critical dimension uniformity control

Publications (2)

Publication Number Publication Date
CN105283944A CN105283944A (zh) 2016-01-27
CN105283944B true CN105283944B (zh) 2018-04-27

Family

ID=52114576

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480033790.1A Active CN105283944B (zh) 2013-06-28 2014-04-30 用于边缘关键尺寸均匀性控制的工艺套件

Country Status (6)

Country Link
US (1) US20150001180A1 (enExample)
JP (2) JP6867159B2 (enExample)
KR (1) KR102190302B1 (enExample)
CN (1) CN105283944B (enExample)
TW (1) TWM495617U (enExample)
WO (1) WO2014209489A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
JP3210105U (ja) 2016-03-04 2017-04-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ユニバーサルプロセスキット
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11387134B2 (en) * 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US20190287835A1 (en) * 2018-02-01 2019-09-19 Yield Engineering Systems, Inc. Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same
JP7138514B2 (ja) * 2018-08-22 2022-09-16 東京エレクトロン株式会社 環状部材、プラズマ処理装置及びプラズマエッチング方法
JP7541005B2 (ja) 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
WO2021158451A1 (en) * 2020-02-04 2021-08-12 Lam Research Corporation Radiofrequency signal filter arrangement for plasma processing system
KR20220010074A (ko) 2020-02-11 2022-01-25 램 리써치 코포레이션 웨이퍼 베벨/에지 상의 증착을 제어하기 위한 캐리어 링 설계들
CN111508803B (zh) * 2020-04-23 2023-01-17 北京北方华创微电子装备有限公司 半导体工艺腔室、晶片边缘保护方法及半导体设备
CN113802111B (zh) * 2020-06-13 2023-10-31 拓荆科技股份有限公司 使用等离子体处理衬底的设备及改善晶圆薄膜表面形貌的方法
WO2021262583A1 (en) * 2020-06-25 2021-12-30 Lam Research Corporation Carrier rings with radially-varied plasma impedance
FI130020B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool
KR102744850B1 (ko) * 2022-08-10 2024-12-19 솔믹스 주식회사 포커스 링 및 이를 포함하는 플라즈마 식각장치
CN115910738B (zh) * 2022-11-01 2025-02-18 上海积塔半导体有限公司 一种通过改变部件尺寸来调节Emax工艺腔体均匀性的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030186563A1 (en) * 2002-03-25 2003-10-02 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US20050133164A1 (en) * 2003-12-17 2005-06-23 Andreas Fischer Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
CN101083223A (zh) * 2006-05-30 2007-12-05 应用材料股份有限公司 用于衬底处理腔的环组件
CN101405431A (zh) * 2006-03-07 2009-04-08 应用材料股份有限公司 有凹口的沉积环

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3121524B2 (ja) * 1995-06-07 2001-01-09 東京エレクトロン株式会社 エッチング装置
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP4602545B2 (ja) * 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド プラズマチャンバの半導体ワークピース用シュラウド
JP3296300B2 (ja) * 1998-08-07 2002-06-24 ウシオ電機株式会社 光照射式加熱装置
WO2000026939A1 (en) * 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
JP3764639B2 (ja) * 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
JP2003257935A (ja) * 2002-03-05 2003-09-12 Tokyo Electron Ltd プラズマ処理装置
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
JP2005167088A (ja) * 2003-12-04 2005-06-23 Matsushita Electric Ind Co Ltd ドライエッチング装置及びドライエッチング方法
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2006086230A (ja) * 2004-09-14 2006-03-30 Hitachi Kokusai Electric Inc 半導体製造装置
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
KR100794308B1 (ko) * 2006-05-03 2008-01-11 삼성전자주식회사 반도체 플라즈마 장치
JP5035884B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 熱伝導シート及びこれを用いた被処理基板の載置装置
WO2009058235A2 (en) * 2007-10-31 2009-05-07 Lam Research Corporation High lifetime consumable silicon nitride-silicon dioxide plasma processing components
JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
JP2011035026A (ja) * 2009-07-30 2011-02-17 Seiko Epson Corp ドライエッチング装置、半導体装置の製造方法、制御リング
JP5719599B2 (ja) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030186563A1 (en) * 2002-03-25 2003-10-02 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US20050133164A1 (en) * 2003-12-17 2005-06-23 Andreas Fischer Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
CN101405431A (zh) * 2006-03-07 2009-04-08 应用材料股份有限公司 有凹口的沉积环
CN101083223A (zh) * 2006-05-30 2007-12-05 应用材料股份有限公司 用于衬底处理腔的环组件

Also Published As

Publication number Publication date
US20150001180A1 (en) 2015-01-01
KR102190302B1 (ko) 2020-12-11
WO2014209489A1 (en) 2014-12-31
JP2021010016A (ja) 2021-01-28
CN105283944A (zh) 2016-01-27
KR20160029073A (ko) 2016-03-14
TWM495617U (zh) 2015-02-11
JP2016530705A (ja) 2016-09-29
JP6867159B2 (ja) 2021-04-28

Similar Documents

Publication Publication Date Title
CN105283944B (zh) 用于边缘关键尺寸均匀性控制的工艺套件
KR101522251B1 (ko) 고 종횡비 피쳐들을 식각하기에 적합한 식각 반응기
TWI471963B (zh) 用於電漿處理腔室之低傾斜度邊緣環
TW202105502A (zh) 具有晶圓邊緣電漿殼層調諧能力的半導體電漿處理設備
JP6810695B2 (ja) 面取り部のポリマー低減のためのエッジリング
US9911607B2 (en) Method of processing target object
TWI750295B (zh) 電漿處理方法及電漿處理裝置
KR101756853B1 (ko) 기판 처리 방법 및 기판 처리 장치
US9607811B2 (en) Workpiece processing method
US9793134B2 (en) Etching method
US9082720B2 (en) Semiconductor device manufacturing method
US9263239B1 (en) Etching method of multilayered film
TWM492915U (zh) 在ｉｃｐ電漿處理腔室中用於高產出、基板極端邊緣缺陷減少之單環設計
TWI725034B (zh) 電漿處理方法
US20110049098A1 (en) Plasma etching method
TW202129753A (zh) 基板處理方法、半導體元件之製造方法及電漿處理裝置
US12255055B2 (en) Integrated cleaning process for substrate etching
US7488689B2 (en) Plasma etching method
CN111326395B (zh) 等离子体处理方法和等离子体处理装置
CN222394768U (zh) 电浆蚀刻系统及用于电浆蚀刻系统的边缘组件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant