JP6867159B2 - 縁部クリティカルディメンジョンの均一性制御用のプロセスキット - Google Patents

縁部クリティカルディメンジョンの均一性制御用のプロセスキット Download PDF

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JP6867159B2
JP6867159B2 JP2016523735A JP2016523735A JP6867159B2 JP 6867159 B2 JP6867159 B2 JP 6867159B2 JP 2016523735 A JP2016523735 A JP 2016523735A JP 2016523735 A JP2016523735 A JP 2016523735A JP 6867159 B2 JP6867159 B2 JP 6867159B2
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ring
substrate
outer quartz
silicon
overlapping region
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JP2016530705A (ja
JP2016530705A5 (enExample
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ケニー リン ドーン
ケニー リン ドーン
ジェイソン デラ ローサ
ジェイソン デラ ローサ
ノールバクシュ　ハミド
ハミド ノールバクシュ
ジョン ムン キム
ジョン ムン キム
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Ceramic Engineering (AREA)
JP2016523735A 2013-06-28 2014-04-30 縁部クリティカルディメンジョンの均一性制御用のプロセスキット Active JP6867159B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361841194P 2013-06-28 2013-06-28
US61/841,194 2013-06-28
US14/020,774 US20150001180A1 (en) 2013-06-28 2013-09-06 Process kit for edge critical dimension uniformity control
US14/020,774 2013-09-06
PCT/US2014/036010 WO2014209489A1 (en) 2013-06-28 2014-04-30 Process kit for edge critical dimension uniformity control

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020164401A Division JP2021010016A (ja) 2013-06-28 2020-09-30 縁部クリティカルディメンジョンの均一性制御用のプロセスキット

Publications (3)

Publication Number Publication Date
JP2016530705A JP2016530705A (ja) 2016-09-29
JP2016530705A5 JP2016530705A5 (enExample) 2017-06-08
JP6867159B2 true JP6867159B2 (ja) 2021-04-28

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Family Applications (2)

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JP2016523735A Active JP6867159B2 (ja) 2013-06-28 2014-04-30 縁部クリティカルディメンジョンの均一性制御用のプロセスキット
JP2020164401A Pending JP2021010016A (ja) 2013-06-28 2020-09-30 縁部クリティカルディメンジョンの均一性制御用のプロセスキット

Family Applications After (1)

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JP2020164401A Pending JP2021010016A (ja) 2013-06-28 2020-09-30 縁部クリティカルディメンジョンの均一性制御用のプロセスキット

Country Status (6)

Country Link
US (1) US20150001180A1 (enExample)
JP (2) JP6867159B2 (enExample)
KR (1) KR102190302B1 (enExample)
CN (1) CN105283944B (enExample)
TW (1) TWM495617U (enExample)
WO (1) WO2014209489A1 (enExample)

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US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
JP7098273B2 (ja) 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US11387134B2 (en) * 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
US20190287835A1 (en) * 2018-02-01 2019-09-19 Yield Engineering Systems, Inc. Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same
JP7138514B2 (ja) * 2018-08-22 2022-09-16 東京エレクトロン株式会社 環状部材、プラズマ処理装置及びプラズマエッチング方法
KR102864012B1 (ko) 2018-12-03 2025-09-23 어플라이드 머티어리얼스, 인코포레이티드 척킹 및 아크 발생 성능이 개선된 정전 척 설계
JP7641972B2 (ja) * 2020-02-04 2025-03-07 ラム リサーチ コーポレーション プラズマ処理システムのためのｒｆ信号フィルタ構成
CN115087758A (zh) 2020-02-11 2022-09-20 朗姆研究公司 用于控制晶片晶边/边缘上的沉积的承载环设计
CN111508803B (zh) * 2020-04-23 2023-01-17 北京北方华创微电子装备有限公司 半导体工艺腔室、晶片边缘保护方法及半导体设备
CN113802111B (zh) * 2020-06-13 2023-10-31 拓荆科技股份有限公司 使用等离子体处理衬底的设备及改善晶圆薄膜表面形貌的方法
KR20220104300A (ko) * 2020-06-25 2022-07-26 램 리써치 코포레이션 방사상으로 가변된 플라즈마 임피던스를 갖는 캐리어 링들
FI130020B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool
KR102744850B1 (ko) * 2022-08-10 2024-12-19 솔믹스 주식회사 포커스 링 및 이를 포함하는 플라즈마 식각장치
CN115910738B (zh) * 2022-11-01 2025-02-18 上海积塔半导体有限公司 一种通过改变部件尺寸来调节Emax工艺腔体均匀性的方法

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JP3121524B2 (ja) * 1995-06-07 2001-01-09 東京エレクトロン株式会社 エッチング装置
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP4602545B2 (ja) * 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド プラズマチャンバの半導体ワークピース用シュラウド
JP3296300B2 (ja) * 1998-08-07 2002-06-24 ウシオ電機株式会社 光照射式加熱装置
JP2002529594A (ja) * 1998-10-29 2002-09-10 アプライド マテリアルズ インコーポレイテッド 半導体ウエハ処理システムにおいて加工物を貫通して電力を結合する装置
JP3764639B2 (ja) * 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
JP2003257935A (ja) * 2002-03-05 2003-09-12 Tokyo Electron Ltd プラズマ処理装置
US7882800B2 (en) * 2001-12-13 2011-02-08 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
US6868302B2 (en) * 2002-03-25 2005-03-15 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
JP2005167088A (ja) * 2003-12-04 2005-06-23 Matsushita Electric Ind Co Ltd ドライエッチング装置及びドライエッチング方法
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2006086230A (ja) * 2004-09-14 2006-03-30 Hitachi Kokusai Electric Inc 半導体製造装置
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
KR100794308B1 (ko) * 2006-05-03 2008-01-11 삼성전자주식회사 반도체 플라즈마 장치
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
JP5035884B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 熱伝導シート及びこれを用いた被処理基板の載置装置
KR101645043B1 (ko) * 2007-10-31 2016-08-02 램 리써치 코포레이션 플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법
JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
JP2011035026A (ja) * 2009-07-30 2011-02-17 Seiko Epson Corp ドライエッチング装置、半導体装置の製造方法、制御リング
JP5719599B2 (ja) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置

Also Published As

Publication number Publication date
KR102190302B1 (ko) 2020-12-11
CN105283944B (zh) 2018-04-27
TWM495617U (zh) 2015-02-11
CN105283944A (zh) 2016-01-27
JP2016530705A (ja) 2016-09-29
JP2021010016A (ja) 2021-01-28
KR20160029073A (ko) 2016-03-14
US20150001180A1 (en) 2015-01-01
WO2014209489A1 (en) 2014-12-31

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