TWI830277B - 製造熱穩定之低介電常數鰭式場效電晶體間隔物之方法 - Google Patents

製造熱穩定之低介電常數鰭式場效電晶體間隔物之方法 Download PDF

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TWI830277B
TWI830277B TW111125494A TW111125494A TWI830277B TW I830277 B TWI830277 B TW I830277B TW 111125494 A TW111125494 A TW 111125494A TW 111125494 A TW111125494 A TW 111125494A TW I830277 B TWI830277 B TW I830277B
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silicon
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米海拉 巴賽諾
史林尼法斯Ｄ 奈馬尼
美儀 石
怡利 葉
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美商應用材料股份有限公司
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Abstract

揭露用於形成熱穩定間隔物層的方法。該方法包含以下步驟：首先，在處理腔室的內部容積中設置基板。該基板具有在該基板上形成的薄膜，該薄膜包含矽、碳、氮、及氫。接著，將高壓蒸氣導入該處理腔室。曝露該薄膜至該高壓蒸氣以將該薄膜轉換成經反應薄膜，該經反應薄膜包含矽、碳、氧、及氫。

Description

製造熱穩定之低介電常數鰭式場效電晶體間隔物之方法
本揭示案的實施例一般係關於用於在FinFET裝置中形成間隔物層的方法及設備。
回應於針對具有較密電路的較小電子裝置之增加的需求，已發展具有三維(3D)結構的裝置。該等裝置的範例包含鰭式場效電晶體(FinFET)，具有在水平延伸的基板上方垂直升高的傳導性的鰭狀結構。有鑑於針對不斷更小裝置的持續要求，針對用於該等FinFET裝置中的改良品質的薄膜層(例如間隔物層)的要求持續增加。使用該等間隔物層以藉由減低寄生電容來改良裝置效能。隨著針對FinFET裝置的改良的要求的增長，針對用於製造該等FinFET裝置的方法的需求亦增長。
產生FinFET結構中的一個操作包含在下方基板上沉積薄膜。然而，所沉積的薄膜可能為不可接受的品質，具有錯誤的介電或電氣屬性，例如太高或太低的介電常數。此外，使用傳統方法之後薄膜層的蝕刻率較所需明顯更高。使用傳統技術也自薄膜層釋出熱穩定元素，例如碳。
因此，技術領域中具有針對用於改良FinFET結構中的薄膜品質之方法的需求。
在一個實施例中，提供形成間隔物層的方法，包含以下步驟：在處理腔室的內部容積中設置基板，該基板具有在該基板上形成的薄膜，該薄膜包含矽、碳、氮、及氫；將處理氣體導入該處理腔室，其中該處理氣體包括高壓蒸氣；曝露該薄膜至該處理氣體以形成經反應薄膜，使得該經反應薄膜包含矽、碳、氧、及氫；及使用惰性氣體沖洗該內部容積。
在另一實施例中，提供形成間隔物層的方法，包含以下步驟：在處理腔室的內部容積中設置基板，該基板具有在該基板上形成的薄膜，該薄膜包含矽、碳、氮、及氫；將處理氣體導入該處理腔室，其中該處理氣體包括高壓蒸氣；曝露該薄膜至該處理氣體以形成經反應薄膜，使得該經反應薄膜包含矽、碳、氧、及氫；使用惰性氣體沖洗該內部容積；及使用氫退火來處置該經反應薄膜。
在另一實施例中，提供形成間隔物層的方法，包含以下步驟：在處理腔室的內部容積中設置基板，該基板具有在該基板上形成的薄膜，該基板包含矽及鍺，該薄膜包含矽、碳、氮、及氫；將處理氣體導入該處理腔室，其中該處理氣體包含高壓蒸氣；曝露該薄膜至該處理氣體以形成經反應薄膜，使得該經反應薄膜包括矽、碳、氧、及氫；使用惰性氣體沖洗該內部容積；及使用氫退火來處置該經反應薄膜。
所提供方法中的高壓蒸氣移除了薄膜併入的氮，且將更熱動態穩定的氧併入薄膜。並未自經反應薄膜移除碳，且碳有助於經反應薄膜的介電常數。
此處所提供的揭示案之實施例包含用於形成熱穩定間隔物層的方法。該方法包含以下步驟：首先，在處理腔室的內部容積中設置基板。該基板具有在該基板上形成的薄膜。接著，將高壓蒸氣導入該處理腔室。曝露具有該薄膜設置於其上的基板至該高壓蒸氣以將該薄膜轉換成經反應薄膜。可移除薄膜中的氮，且經反應薄膜含有氧。此處所提供的揭示案之實施例可特別有用於(但不限定於)將矽碳胺(SiCNH)薄膜轉換成碳氫氧化矽(SiCOH)經反應薄膜。
如此處所使用，用語「約」指與標稱值+/-10%的變化度。應理解該變化度可包含於此處所提供的任何數值中。
圖1根據一個實施例圖示批次處理腔室100的示意橫截面正視圖。批次處理腔室100具有主體110，主體110具有外表面112及內表面113而封閉內部容積115。在一些實施例中，例如圖1中，主體110具有環狀橫截面，儘管在其他實施例中，主體的橫截面可為矩形或任何封閉形狀。主體110的外表面112可由抗腐蝕鋼(CRS)製成，例如但不限於不鏽鋼。主體110的內表面113可由對腐蝕展現高阻抗的鎳基鋼合金製成，例如但不限於HASTELLOY ®、INCONEL ®、或MONEL ®等。
批次處理腔室100具有門120，經配置以選擇性地封閉主體110內的內部容積115。使用密封122以密封門120至主體110，以便密封內部容積115以用於處理。密封122可由聚合物製成，例如但不限於全氟彈性體。冷卻通道124設置於門120上相鄰於密封122，其中流動冷卻劑以便維持密封小於密封的最大安全操作溫度。藉由控制器180經由自溫度感測器116或流動感測器(未展示)所接收的回饋來控制冷卻通道124內冷卻劑的流動。
批次處理腔室100具有穿過主體的埠117。埠117具有穿過埠117的管118，並且該管耦合至加熱器119。管118的一個末端連接至內部容積115。管118的另一末端分岔成入口管道157及出口管道161。入口管道157經由隔絕閥155流體地連接至氣體面板150且進一步耦合至加熱器158。出口管道161經由隔絕閥165流體地連接至凝結器160且耦合至加熱器162。加熱器119、158、及162經配置以分別維持流經管118、入口管道157、及出口管道161的處理氣體於大於處理氣體的凝結點的溫度。由功率來源145來對加熱器119、158、及162供電。
氣體面板150經配置以提供壓力下的處理氣體進入入口管道157以用於穿過管118傳輸進入內部容積115。藉由耦合至主體110的壓力感測器114來監測導入內部容積115的處理氣體的壓力。凝結器160流體地耦合至冷卻流體，且經配置以在自內部容積115穿過管118移除之後凝結流經出口管道161的氣體產物。凝結器160將氣體產物自氣相轉換成液相。幫浦170流體地連接至凝結器160且抽出來自凝結器160的液化產物。藉由控制器180來控制氣體面板150、凝結器160、及幫浦170的操作。
一或更多個加熱器140設置於主體110上且經配置以加熱批次處理腔室100內的內部容積115。在一些實施例中，加熱器140設置於主體110的外表面112上，如圖1中所展示，然而在其他實施例中，加熱器可設置於主體的內表面113上。由功率來源145來對加熱器140供電。藉由控制器180經由自溫度感測器116所接收的回饋來控制至加熱器140的功率。溫度感測器116耦合至主體110且監測內部容積115的溫度。
移動耦合至致動器(未展示)的匣130進出內部容積115。匣130具有頂部表面132、底部表面134、及壁136。匣130的壁136具有複數個基板儲存插槽138。每一基板儲存插槽138沿著匣130的壁136均勻地間隔。每一基板儲存插槽138經配置以固持其中的基板135。匣130可具有最多50個基板儲存插槽138以用於固持基板135。匣130提供有效的載具以用於傳送複數個基板135進入及離開批次處理腔室100及用於處理內部容積115中的複數個基板。
控制器180控制批次處理腔室100的操作。控制器180控制氣體面板150、凝結器160、幫浦170、隔絕閥155及165、以及功率來源145的操作。控制器180也通訊地連接至溫度感測器116、壓力感測器114、及冷卻通道124。控制器180包含中央處理單元(CPU)182、記憶體184、及支援電路186。CPU 182可為可使用於工業設定的任何形式的一般用途電腦處理器。記憶體184可為隨機存取記憶體、唯讀記憶體、軟碟、或硬碟驅動、或其他形式的數位儲存。支援電路186傳統上耦合至CPU 182且可包含快取記憶體、時脈電路、輸入/輸出系統、功率供應等。
圖2為根據一個實施例的單一基板處理腔室200的示意橫截面正視圖。單一基板處理腔室200具有主體210，主體210具有外表面212及內表面213而封閉內部容積215。在一些實施例中，例如圖2中，主體210具有環狀橫截面，儘管在其他實施例中，主體的橫截面可為矩形或任何封閉形狀。主體210的外表面212可由抗腐蝕鋼(CRS)製成，例如但不限於不鏽鋼。主體210的內表面213可由對腐蝕展現高阻抗的鎳基鋼合金製成，例如但不限於HASTELLOY ®、INCONEL ®、及MONEL ®。
基板支撐件230設置於內部容積215內。基板支撐件230具有主幹234及由主幹固持的基板支撐主體232。致動基板支撐主體232以在單一基板處理腔室200的內部容積215內升高或降低以用於在其上設置基板235。基板支撐主體232可選地具有嵌入其中的電阻性加熱元件231。
單一基板處理腔室200具有穿過主體210的開口211，經由開口211，基板235可裝載至或卸載自設置於內部容積215中的基板支撐件230。開口211具有門220，經配置以選擇性地密封內部容積215。使用密封222以密封門220以便密封內部容積215以用於處理。密封222可由例如聚合物如含氟聚合物製成，例如但不限於全氟彈性體及聚四氟乙烯(PTFE)。冷卻通道224設置相鄰於門220，其中流動冷卻劑以便維持密封222小於密封的最大安全操作溫度。藉由控制器280經由自溫度感測器216或流動感測器(未展示)所接收的回饋來控制冷卻劑的流動。
單一基板處理腔室200具有穿過主體210的埠217。埠217具有穿過埠217的管218，該管耦合至加熱器219。管218的一個末端連接至內部容積215。管218的另一末端分岔成入口管道257及出口管道261。入口管道257經由隔絕閥255流體地連接至氣體面板250且進一步耦合至加熱器258。出口管道261經由隔絕閥265流體地連接至凝結器260且耦合至加熱器262。加熱器219、258、及262經配置以分別維持流經管218、入口管道257、及出口管道261的處理氣體於大於處理氣體的凝結點的溫度。由功率來源245來對加熱器219、258、及262供電。
氣體面板250及壓力感測器214在本質及功能上與圖1的氣體面板150及壓力感測器114實質上相似。凝結器260在本質及功能上與圖1的凝結器160實質上相似。幫浦270在本質及功能上與圖1的幫浦170實質上相似。一或更多個加熱器240設置於主體210上且經配置以加熱單一基板處理腔室200內的內部容積215。加熱器240也在本質及功能上與使用於批次處理腔室100中的加熱器140實質上相似。進一步地，控制器280與圖1的控制器180相似，且中央處理單元(CPU)282、記憶體284、及支援電路286分別與圖1的CPU 182、記憶體184、及支援電路186相似。
圖3為根據一個實施例的電子裝置300的區段。電子裝置300包含基板302，在基板302上形成間隔物層304。在一些實施例中，基板302為裸矽、III-V、或鍺晶圓。根據一個實施例，基板包含矽(Si)及鍺(Ge)。在另一實施例中，基板302進一步包含設置於基板302上的薄膜。基板302可為光罩、半導體晶圓、或其他工件。根據一個實施例，基板包含鰭式場效電晶體(FinFET)結構。根據一些實施例，基板302包含任何材料以製造任何積體電路、被動(例如，電容器、電感器)及主動(例如，電晶體、光偵測器、雷射、二極體)微電子裝置。根據一個實施例，基板302包含絕緣及/或介電材料以分開該等主動及被動微電子裝置與形成於其上的一或多個傳導性層。在一個實施例中，基板302為半導體基板，包含一或更多個介電層，例如，二氧化矽、氮化矽、藍寶石、及其他介電材料。在一個實施例中，基板302為包含一或更多個層的晶圓堆疊。基板302的一或更多個層可包含傳導性、半傳導性、絕緣性、或上述之任何組合的層。
根據一個實施例，間隔物層304由碳氫氧化矽(SiCOH)薄膜形成。根據一個實施例，藉由使用原子層沉積(ALD)處理沉積矽碳胺(SiCNH)薄膜來形成間隔物層304。然而，可使用其他方法，例如但不限於化學氣相沉積(CVD)、物理氣相沉積(PVD)、電漿增強原子層沉積(PEALD)、及電漿增強化學氣相沉積(PECVD)。在使用高壓蒸氣處置之後(如參考圖4所述)，SiCNH薄膜轉換成熱穩定SiCOH薄膜。
圖4為根據一個實施例用於形成間隔物層(例如圖3中所展示的間隔物層304)的方法400操作之流程圖。儘管方法400的操作與圖4一併描述，發明所屬領域具有通常知識者將理解，經配置以任何順序執行方法操作的任何系統落於此處所述的實施例的範圍內。可與上述批次處理腔室100或單一基板處理腔室200一起使用圖4的方法400。然而，可針對方法400使用其他相似腔室。
方法400始於操作402，其中基板設置於處理腔室的內部容積內，且基板上形成薄膜。根據一個實施例，薄膜包含矽(Si)。根據另一實施例，薄膜包含Si、碳(C)、氮(N)、及氫(H)。而根據又一實施例，薄膜為矽碳胺(SiCNH)薄膜。可使用以下處理來沉積薄膜層，例如：原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、電漿增強原子層沉積(PEALD)、及電漿增強化學氣相沉積(PECVD)等。根據一個實施例，以最小化使薄膜層熱不穩定的末端甲基(CH 3)基團的方案來沉積薄膜層。
在操作404處，薄膜層曝露至處理氣體(處理氣體包含高壓蒸氣)以在處理腔室的內部容積中退火薄膜層。基板可傳送至新的腔室，或基板可在與使用以沉積薄膜層相同的腔室中曝露至處理氣體。將高壓蒸氣定義成以高於2 bar的壓力提供的蒸氣。高壓蒸氣為處於例如約2 bar及約50 bar之間的範圍中的壓力，例如約20 bar。蒸氣例如為乾蒸氣或過熱蒸氣。在薄膜層曝露至處理氣體期間，支撐基板的台座維持於例如約攝氏200度至約攝氏500度之間的溫度，例如約攝氏300度。根據一些實施例，處理氣體進一步包含載送氣體，例如惰性氣體，如氬或氮氣(N 2)等。蒸氣處於處理氣體約5%至約100%的濃度。薄膜層曝露於處理氣體大於2分鐘的處理時間，例如約2分鐘及約120分鐘之間，例如約10分鐘。處理期間，處理腔室主體維持於約攝氏200度或更高以便防止蒸氣凝結至處理腔室主體上。曝露至處理氣體將薄膜化學轉換成經反應薄膜。根據一個實施例，經反應薄膜包含Si。根據另一實施例，經反應薄膜包含Si、C、氧(O)、及H。而根據又一實施例，經反應薄膜為碳氫氧化矽(SiCOH)薄膜。而根據可與其他實施例組合的又一實施例，經反應薄膜包含化學計量上較氮更多的氧。根據一個實施例，方法400將熱不穩定SiCNH薄膜轉換成具有低介電常數的更熱動態穩定的SiCOH薄膜。
在所需處理時間之後，自內部容積排出處理氣體。在內部容積中產生亞大氣壓力環境，同時將惰性氣體(例如氮或其他惰氣)導入內部容積。惰性氣體沖洗處理腔室以移除過度的濕度。
在操作406處，可選地使用氫退火來處置薄膜層，其中含氫氣體流經處理腔室。根據一個實施例，含氫氣體包含氫氣(H 2)。在約攝氏600度至約攝氏800度的範圍中的一溫度下進行氫退火。也在亞大氣壓力條件下進行氫退火，例如約5 Torr至約500 Torr之間。氫退火進一步降低介電常數且大幅減低形成的層的洩漏電流。
SiCOH為常見的使用於FinFET領域中的低介電常數(low-k)介電材料。本領域中常見的程序包含在基板上沉積SiCNH薄膜，且將SiCNH薄膜退火以形成SiCOH。然而，傳統退火方法(例如，爐退火)通常無法適當地將SiCNH薄膜轉換成SiCOH薄膜。例如，使用傳統方法之後，薄膜層的蝕刻率較所需明顯更高。使用傳統技術也將自薄膜層釋放熱穩定碳。使用傳統技術也將不期望地氧化基板。進一步地，在爐退火處理中的處理期間，不能夠維持蒸氣濃度。
提供方法400以用於將包含矽、碳、氮、及氫的薄膜轉換成包含矽、碳、氧、及氫的經反應薄膜。使用處理氣體來處置下方基板上所沉積的薄膜，其中處理氣體包含高壓蒸氣。與高壓蒸氣的相互作用自薄膜移除氮且將氧併入薄膜。
使用此處所述的方式允許熱穩定的低介電常數薄膜層。高壓蒸氣大幅增加可用於將SiCNH薄膜轉換成SiCOH薄膜的蒸氣濃度，且能夠在短時間及低溫度下達成。基板不會被氧化且穩定碳不會自薄膜移除。因此，所得的SiCOH薄膜層提供了熱穩定且展現所需的低蝕刻率(小於每分鐘約1 Å)的約4或更低的低介電常數k值。
儘管前述涉及本揭示案的實施例，可設計本揭示案的其他及進一步的實施例而不脫離其基本範圍，且其範圍由隨後的申請專利範圍所決定。
100:批次處理腔室 110:主體 112:外表面 113:內表面 114:壓力感測器 115:內部容積 116:溫度感測器 117:埠 118:管 119:加熱器 120:門 122:密封 124:冷卻通道 130:匣 132:頂部表面 134:底部表面 135:基板 136:壁 138:基板儲存插槽 140:加熱器 145:功率來源 150:氣體面板 155:隔絕閥 157:入口管道 158:加熱器 160:凝結器 161:出口管道 162:加熱器 165:隔絕閥 170:幫浦 180:控制器 182:中央處理單元(CPU) 184:記憶體 186:支援電路 200:單一基板處理腔室 210:主體 212:外表面 213:內表面 214:壓力感測器 215:內部容積 216:溫度感測器 217:埠 218:管 219:加熱器 220:門 222:密封 224:冷卻通道 230:基板支撐件 231:電阻性加熱元件 232:基板支撐主體 234:主幹 235:基板 240:加熱器 245:功率來源 250:氣體面板 255:隔絕閥 257:入口管道 258:加熱器 260:凝結器 261:出口管道 262:加熱器 265:隔絕閥 270:幫浦 280:控制器 282:中央處理單元(CPU) 284:記憶體 286:支援電路 300:電子裝置 302:基板 304:間隔物層 400:方法 402:操作 404:操作 406:操作
為了可以詳細理解本揭示案上述特徵中的方式，可藉由參考實施例而具有本揭示案的更特定描述(簡短總結如上)，其中一些圖示於所附圖式中。然而，注意所附圖式僅圖示示範性的實施例，因此不考慮限制其範圍，因為本揭示案可允許其他等效實施例。
圖1根據一個實施例圖示批次處理腔室的示意橫截面正視圖。
圖2根據一個實施例圖示單一基板處理腔室的示意橫截面正視圖。
圖3根據一個實施例圖示電子裝置的區段。
圖4為根據一個實施例用於形成間隔物層的方法操作之流程圖。
為了便於理解，儘可能使用相同元件符號，以標示圖式中共用的相同元件。思量一個實施例的元件及特徵可有利地併入其他實施例，而無須進一步敘述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
400:方法
402:操作
404:操作
406:操作

Claims (20)

  1. 一種形成一間隔物層的方法，該方法包含： 在一處理腔室的一內部容積中設置一基板，該基板具有在該基板上形成的一薄膜，該薄膜包括矽、碳、氮及氫；將一處理氣體導入該處理腔室，其中該處理氣體包含高壓乾或過熱蒸氣；以及曝露該薄膜至該處理氣體以形成一所得的碳氫氧化矽薄膜。
  2. 如請求項1所述之方法，進一步包含： 使用一含氫氣體來處置該所得的碳氫氧化矽薄膜，以形成一經處理的碳氫氧化矽薄膜，該經處理的碳氫氧化矽薄膜的一介電常數小於該所得的碳氫氧化矽薄膜。
  3. 如請求項1所述之方法，其中該高壓乾或過熱蒸氣處於約2 bar及約50 bar之間的一壓力。
  4. 如請求項3所述之方法，其中該高壓乾或過熱蒸氣處於該處理氣體的約5%至約100%的一濃度。
  5. 如請求項1所述之方法，其中在導入該處理氣體之前沉積在該基板上的包含矽、碳、氮及氫的該薄膜為矽碳胺（SiCNH）薄膜。
  6. 如請求項5所述之方法，其中藉由一原子層沉積(ALD)處理或一電漿增強原子層沉積(PEALD) 處理來形成該矽碳胺（SiCNH）薄膜。
  7. 如請求項1所述之方法，其中該所得的碳氫氧化矽薄膜包含化學計量上較氮更多的氧。
  8. 如請求項1所述之方法，進一步包含： 在介於約攝氏600度至約攝氏800度的一溫度與一亞大氣壓力下，於一含氫氣體中退火該所得的碳氫氧化矽薄膜。
  9. 如請求項1所述之方法，其中該基板包括一鰭式場效電晶體結構。
  10. 一種形成一間隔物層的方法，該方法包含： 在一處理腔室的一內部容積中設置一基板，該基板具有在該基板上形成的矽碳胺（SiCNH）薄膜；在介於約攝氏300度至約攝氏500度的一溫度下，曝露該矽碳胺（SiCNH）薄膜至一處理氣體以形成碳氫氧化矽薄膜，該處理氣體包括高壓乾或過熱蒸氣；使用一惰性氣體沖洗該內部容積；以及使用一氫退火來處置該碳氫氧化矽薄膜，其中該氫退火包含將該碳氫氧化矽薄膜曝露至一含氫氣體，該含氫氣體包含氫氣。
  11. 如請求項10所述之方法，其中該高壓乾或過熱蒸氣處於約2 bar及約50 bar之間的一壓力。
  12. 如請求項10所述之方法，其中該處理氣體進一步包括一載送氣體。
  13. 如請求項12所述之方法，其中該高壓乾或過熱蒸氣處於該處理氣體的約5%至約100%的一濃度。
  14. 如請求項10所述之方法，其中將該矽碳胺（SiCNH）曝露至該處理氣體達介於約2分鐘至約120分鐘之間的一時間。
  15. 如請求項10所述之方法，其中該基板包括一鰭式場效電晶體結構。
  16. 如請求項10所述之方法，其中藉由一原子層沉積(ALD)處理或一電漿增強原子層沉積(PEALD) 處理來形成該矽碳胺（SiCNH）薄膜，且其中該碳氫氧化矽薄膜包含化學計量上較氮更多的氧。
  17. 如請求項16所述之方法，其中在介於約攝氏600度至約攝氏800度的一溫度下執行該氫退火，且其中在一亞大氣壓力下執行該氫退火。
  18. 一種形成用於一鰭式場效電晶體結構的一間隔物層的方法，該方法包含： 在一處理腔室的一內部容積中設置一基板，該基板具有在該基板上形成的矽碳胺（SiCNH）薄膜，配置該矽碳胺（SiCNH）薄膜以形成用於一鰭式場效電晶體結構的一間隔物層，該基板包含矽與鍺；將一處理氣體導入該處理腔室，其中該處理氣體包含高壓乾或過熱蒸氣；在介於約攝氏300度至約攝氏500度的一溫度下，曝露該矽碳胺（SiCNH）薄膜至該處理氣體以形成碳氫氧化矽薄膜，該碳氫氧化矽薄膜包含化學計量上較氮更多的氧；使用一惰性氣體沖洗該內部容積；以及使用一氫退火來處置該經碳氫氧化矽薄膜，其中該氫退火包含將該碳氫氧化矽薄膜曝露至一含氫氣體，該含氫氣體包含氫氣。
  19. 如請求項18所述之方法，其中該高壓乾或過熱蒸氣處於約2 bar及約50 bar之間的一壓力；以及其中該高壓乾或過熱蒸氣處於該處理氣體的約5%至約100%的一濃度。
  20. 如請求項19所述之方法，其中藉由一原子層沉積(ALD)處理或一電漿增強原子層沉積(PEALD) 處理來形成該矽碳胺（SiCNH）薄膜。
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