TWI784738B - 半導體封裝件及半導體封裝件之製造方法 - Google Patents
半導體封裝件及半導體封裝件之製造方法 Download PDFInfo
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- TWI784738B TWI784738B TW110137066A TW110137066A TWI784738B TW I784738 B TWI784738 B TW I784738B TW 110137066 A TW110137066 A TW 110137066A TW 110137066 A TW110137066 A TW 110137066A TW I784738 B TWI784738 B TW I784738B
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- semiconductor device
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Abstract
在此提供一種半導體封裝件之製造方法,為用以於將半導體裝置配置於基材時獲得高對準精確度。半導體封裝件包含基材、半導體裝置及樹脂絕緣層。基材設置有凹部。半導體裝置配置於基材之設置有凹部之表面。樹脂絕緣層覆蓋半導體裝置。半導體封裝件亦可更包含位於基材與半導體裝置之間之接合層。接合層亦可具有露出凹部之開口部,樹脂絕緣層亦可接觸於開口部之側壁。
Description
本發明為關於一種半導體封裝件及半導體封裝件之製造方法。本發明特別為關於將半導體裝置裝設於基材上之裝設技術。
以往,攜帶電話或智慧型手機等之電子儀器中,已知有使用一種半導體封裝件構造,其為於支撐基板上搭載IC晶片等之半導體裝置(例如參照日本專利公開案第2010-278334號公報)。一般而言,如此之半導體封裝件中,所採用之結構為經由接合層將IC晶片等之半導體裝置接合於支撐基材上,且藉由使用密封體(密封用樹脂材料)覆蓋此半導體裝置,以保護半導體裝置。
使用於半導體裝置之支撐基材,可使用印刷基材、陶瓷基材等各種基材。特別是近年來,使用金屬基材之半導體封裝件之開發獲得了進展。於金屬基材上搭載半導體裝置再藉由配線扇出之半導體封裝件,由於其具有優良電磁屏蔽性及散熱特性等優點,故以做為具有高可靠度之半導體封裝件而受到注目。如此之半導體封裝件具有高封裝件設計自由度之優點。
於支撐基材上搭載半導體裝置之構造之場合中,藉由將多個半導體裝置搭載於大型的支撐基材上,而能夠於同一流程中製造多個半導體封裝件。此場合中,於製造流程終了後,單片化形成於支撐基材上之多個半導體封裝件,以完成各個半導體封裝件。如此將半導體裝置搭載於支撐基材上之半導體封裝件構造,具有高量產性之優點。
如上所述,於考量使用大型金屬基材做為支撐基材之量產方法之場合中,會要求將半導體裝置配置於此金屬基材時要具備高對準精確度,要求半導體裝置與配線間要具備良好接觸,或要求單片化半導體封裝件時要具備高良率。
有鑑於如此之課題,本發明之一目的在於提供一種半導體封裝件之製造方法,為用以於將半導體裝置配置於基材時獲得高對準精確度。
關於本發明之一實施型態之半導體封裝件包含基材、半導體裝置及樹脂絕緣層。基材設置有至少一個凹部。半導體裝置配置於前述基材之設置有前述凹部之表面。樹脂絕緣層覆蓋前樹半導體裝置。
半導體封裝件亦可更包含位於前述基材與前述半導體裝置之間之接合層。
前述接合層亦可具有露出前述凹部之開口部,前述樹脂絕緣層亦可接觸於前述開口部之側壁。
前述凹部亦可設置二個以上,且亦能以對應前述半導體裝置之各個對角之位置設置。
前述樹脂絕緣層亦可接觸於前述凹部之側壁。
前述樹脂絕緣層亦可填滿前述凹部之內部。
前述凹部之尺寸亦可為0.05 mm以上且為1.0 mm以下。
前述凹部之尺寸亦可為0.1 mm以上且為0.3 mm以下。
前述凹部與前述半導體裝置間之距離亦可為0.05 mm以上且為0.5 mm以下。
關於本發明之一實施型態之半導體封裝件之製造方法包含以下步驟。於基材之第一表面形成至少一凹部。根據凹部進行位置配合步驟,以將半導體裝置配置於基材之第一表面。形成覆蓋半導體裝置之樹脂絕緣層。
亦可於前述第一表面上形成接合層,且將半導體裝置配置於接合層上。
亦可於接合層形成露出凹部之開口部,且以接觸於開口部之側壁之方式形成樹脂絕緣層。
凹部亦可形成二個以上,且根據二個以上之凹部進行位置配合步驟。
前述接合層亦可為片狀接合層,前述片狀接合層亦可形成於前述第一表面上,且以前述凹部與前述片狀接合層間形成空洞之方式覆蓋前述凹部。
再者,亦可藉由濕蝕刻以表面粗糙化前述基材之第二表面及第三表面,第二表面相反於第一表面,第三表面連接前述第一表面及前述第二表面,且於表面粗糙化前述第二表面及前述第三表面之後,於前述接合層形成前述開口部。
前述基材亦可為不鏽鋼,且使用含銅之藥液進行前述濕蝕刻。
關於本發明之一實施型態之半導體封裝件之製造方法包含以下步驟。於基材形成第一凹部、第二凹部及第三凹部。根據第一凹部及第二凹部進行位置配合,以將第一半導體裝置配置於基材之形成有第一凹部及第二凹部之表面。根據第二凹部及第三凹部進行位置配合,以將第二半導體裝置配置於基材之形成有第二凹部及第三凹部之表面。形成覆蓋第一半導體裝置及第二半導體裝置之樹脂絕緣層。
亦可於形成有第一凹部、第二凹部及第三凹部之基材上更形成接合層,且將第一半導體裝置及第二半導體裝置配置於接合層上。
亦可於接合層形成露出第一凹部之第一開口部、露出第二凹部之第二開口部及露出第三凹部之第三開口部,且以接觸於第一開口部之側壁、第二開口部之側壁及第三開口部之側壁之方式形成樹脂絕緣層。
根據關於本發明之半導體封裝件之製造方法,所能夠提供之半導體封裝件之製造方法為用以於將半導體裝置配置於基材時獲得高對準精確度。
以下,將參照圖式詳細說明關於本發明之一實施型態之半導體封裝件之構造及其製造方法。以下所示之實施型態為本發明之實施型態之一範例,而並非解釋成將本發明限定於此些實施型態。於本實施型態所參照之圖式中,相同部分或具有相同功能之部分將標示相同之符號,且將省略其反覆之說明。為了便於說明,而有圖式之尺寸比例與實際比例相異之場合,且有結構之一部分自圖式省略之場合。為了說明上的方便,雖使用所謂之上方或下方之用語進行說明,但例如第一元件與第二元件之上下關係亦能以相反於圖式之方式配置。以下說明中,基板之第一表面及第二表面並非指示基板之特定表面。但基板之正面方向或背面方向則屬於特定,亦即為用以對於基板特定上下方向之名稱。
以下將說明實施型態1。
關於本發明之實施型態1之半導體封裝件之概要,以下將參照圖1A及圖1B詳細說明。圖1A為關於本發明之一實施型態之半導體封裝件之剖面示意圖。圖1B為繪示關於本發明之一實施型態之對準標記與半導體裝置間之位置關係之俯視示意圖。於圖1B中,為了說明上的方便,而例如省略了於半導體裝置120上層之配線140及焊料球160。
以下將說明半導體封裝件10之構造。
如圖1A所示,半導體封裝件10包含支撐基材100、接合層110、半導體裝置120、第一樹脂絕緣層130、配線140、第二樹脂絕緣層150及焊料球160。如圖1B所示,於支撐基材100上設置位於半導體裝置120之周圍之對準標記(對準標記er)102。於圖1B中,以對應半導體裝置120之對角之位置設置二個對準標記102。
於支撐基材100設置對準標記102(凹部),對準標記102為令支撐基材100之一部分凹陷之形狀。換言之,於半導體封裝件10中使用不平坦的支撐基材100。接合層110配置於支撐基材100之正面,且以露出對準標記102之方式於接合層110之一部分開設開口。支撐基材100之正面指的是支撐基材100之設置有對準標記102之表面。於接合層110開設範圍大於對準標記102之開口部112。開口部112露出對準標記102及其周邊之支撐基材100之正面。
對準標記102之尺寸(最大徑位置之尺寸)能夠於0.05 mm以上且1.0 mm以下之範圍中選擇。對準標記102之尺寸亦可為0.1 mm以上且為0.3 mm以下。對準標記102與半導體裝置120間之距離能夠於0.05 mm以上且0.5 mm以下之範圍中選擇。對準標記102之尺寸為對準標記讀取裝置能夠辨識之尺寸即可。於圖1B中,雖例示對準標記102之形狀為圓形,但亦可為其他形狀。對準標記102亦可為數字或文字。對準標記102之尺寸意味著單一個對準標記102中之最大徑位置之尺寸。對準標記102與半導體裝置120間之距離意味著二者間距中最短位置之距離。
半導體裝置120配置於接合層110上。於半導體裝置120之上部設置有外部端子122,外部端子122連接於半導體裝置120所含有之電子迴路。圖1A中雖例示接合層110為單層之構造,但並非限定於此構造,接合層110亦可為多層。圖1B中雖例示對單一個半導體裝置120設置二個對準標記102之結構,但並非限定於此結構。舉例而言,對單一個半導體裝置120亦可設置至少一個以上之對準標記102。對單一個半導體裝置120亦可設置三個以上之對準標記102。
第一樹脂絕緣層130以覆蓋半導體裝置120之方式配置於支撐基材100上。第一樹脂絕緣層130以嵌入開口部112及對準標記102之凹部之方式配置。換言之,第一樹脂絕緣層130接觸於開口部112之側壁。同樣地,第一樹脂絕緣層130亦接觸於對準標記102之凹部之側壁。於第一樹脂絕緣層130開設開口部132。開口部132到達外部端子122。換言之,開口部132以露出外部端子122之方式開設。
圖1A中雖例示開口部112之側壁之形狀為垂直且此側壁與接合層110之表面呈現直角之構造,但並非限定於此構造。舉例而言,開口部112之側壁亦可為傾斜於接合層110之表面垂直線之錐狀。此錐狀可為自開口部112之下方朝向上方擴大開口部112之口徑之正錐狀,另亦可為自開口部112之下方朝向上方縮小開口部112之口徑之反錐狀。開口部112之側壁與接合層110之表面間亦可為彎曲狀。換言之,開口部112之側壁與接合層110之表面間之角隅部(二者邊界附近)亦可為圓角形狀。
配線140包含第一導電層142及第二導電層144。第一導電層142配置於第一樹脂絕緣層130之上表面。第二導電層144配置於第一導電層142上及開口部132內部,且連接於外部端子122。圖1A中雖例示第一導電層142僅配置於第一樹脂絕緣層130之上表面而完全未配置於開口部132之內部之構造,但並非限定於此構造。舉例而言,第一導電層142之一部分亦可配置於開口部132內部。第一導電層142及第二導電層144可如圖1A所示分別為單層,第一導電層142及第二導電層144亦可其中一者或二者皆為多層。
第二樹脂絕緣層150以覆蓋配線140之方式配置於第一樹脂絕緣層130上。於第二樹脂絕緣層150開設開口部152。開口部152到達配線140。換言之,開口部152以露出配線140之方式開設。
焊料球160配置於開口部152內部及第二樹脂絕緣層150之上表面,且連接於配線140。焊料球160之上表面自第二樹脂絕緣層150之上表面朝上方凸出。焊料球160之凸出部具有向上凸起之彎曲形狀。焊料球160之彎曲形狀於剖面視角可為圓弧形,亦可為拋物線形。
如上所述,根據關於實施型態1之半導體封裝件,藉由第一樹脂絕緣層130接觸於對準標記102之凹部之側壁,而能夠提升接合層110與第一樹脂絕緣層130間之密合性。舉例而言,於支撐基材100設置對準標記102時,於設置有對準標記102之區域中,接合層110所帶來之接合效果可能會有所減弱。因此,可能會有局部第一樹脂絕緣層130自支撐基材100剝離,而此剝離現象可能會導致第一樹脂絕緣層130自接合層110剝離。然而,如上所述,藉由第一樹脂絕緣層130接觸於對準標記102之凹部之側壁,而能夠抑制局部第一樹脂絕緣層130自支撐基材100剝離之現象。
以下將說明半導體封裝件10之各個元件之材質。
關於圖1A及圖1B所示之半導體封裝件10所包含之各個元件(各層)之材料,以下將詳細說明。
支撐基材100能夠使用金屬基材。金屬基材能夠使用不鏽鋼(SUS)基材、鋁(Al)基材、鈦(Ti)基材、銅(Cu)等之金屬材料。支撐基材100能夠使用金屬基材以外之矽基板、碳化矽基板、化合物半導體基板等之半導體基材。由於SUS基材之熱膨脹率低且價格低廉,故支撐基材100可使用SUS基材。
接合層110能夠使用含有環氧(epoxy)系樹脂或丙烯酸系樹脂之接合劑。
半導體裝置120能夠使用中央處理單元(Central Processing Unit,CPU)、記憶體、微機電系統(Micro Electro Mechanical Systems,MEMS)、電力用半導體元件(power device)等。
第一樹脂絕緣層130及第二樹脂絕緣層150能夠使用聚醯亞胺(polyimide)、環氧樹脂、聚醯亞胺樹脂、苯並環丁烯(benzocyclobutene)樹脂、聚醯胺(polyamide)、酚醛(phenol)樹脂、矽(silicone)樹脂、氟樹脂、液晶聚合物(polymer)、聚醯胺醯亞胺(polyamide imide)、聚苯並噁唑(polybenzoxazole)、氰酸酯(cyanate)樹脂、芳香族聚醯胺(aramid)、聚烯烴(polyolefin)、聚酯(polyester)、BT樹脂、FR-4、FR-5、聚縮醛(polyacetal)、聚對苯二甲酸丁二酯(polybutylene terephthalate)、間規聚苯乙烯(syndiotactic polystyrene)、聚苯硫醚(polyphenylene sulfide)、聚醚醚酮(polyetheretherketone)、聚醚腈(polyether nitrile)、聚碳酸酯(polycarbonate)、聚苯醚(polyphenylene ether)、聚碸(polysulfone)、聚醚碸(polyethersulfone)、聚芳酯(polyarylate)、聚醚醯亞胺(polyetherimide)等材料。由於環氧系樹脂具有優良之電性特性及加工特性,故第一樹脂絕緣層130及第二樹脂絕緣層150可使用環氧系樹脂。
使用於本實施型態第一樹脂絕緣層130可含有填充物。填充物可使用玻璃、滑石、雲母、二氧化矽、氧化鋁等之無機填充物。填充物亦可使用氟樹脂填充物等之有機填充物。然而,第一樹脂絕緣層130並非限定為必須含有填充物之樹脂。於本實施型態中,第二樹脂絕緣層150雖未含有填充物,但第二樹脂絕緣層150亦可含有填充物。
第一導電層142及第二導電層144能夠選自銅(Cu)、金(Au)、銀(Ag)、鉑(Pt)、銠(Rh)、錫(Sn)、鋁(Al)、鎳(Ni)、鈀(Pd)、鉻(Cr)等金屬或使用其之合金。第一導電層142及第二導電層144可使用相同材料,亦可使用相異材料。
焊料球160能夠例如使用由Sn合金形成之球狀物體,此Sn合金為將少量之Ag、Cu、Ni、鉍(Bi)或鋅(Zn)添加於Sn之Sn合金。除了焊料球以外,亦能夠使用一般的導電性粒子。導電性粒子能夠例如使用於粒子狀樹脂周圍形成導電性膜體之物質。除了焊料球以外,亦能夠使用焊料膏。焊料膏能夠使用Sn、Ag、Cu、Ni、Bi、磷(P)、鍺(Ge)、銦(In)、銻(Sb)、鈷(Co)、鉛(Pb)。
以下將說明半導體封裝件10之製造方法。
以下使用圖2至圖23說明關於本發明之實施型態1之半導體封裝件10之製造方法。於圖2至圖23中,與圖1A及圖1B所示之元件相同之元件標示著相同符號。於以下之說明中,支撐基材100使用SUS基材,第一樹脂絕緣層130使用環氧系樹脂,第一導電層142及第二導電層144使用Cu,焊料球160使用上述Sn合金,以說明製作半導體封裝件之製造方法。
圖2為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於支撐基材形成對準標記之工程之圖。藉由光微影及蝕刻形成對準標記102(凹部)。對準標記102之位置及俯視形狀能夠依據目的而適當決定。對準標記102所設置之段差,為使用光學顯微鏡等工具自支撐基材100之上表面觀察時能夠辨識之程度即可。
圖2中雖例示對於後續工程中配置半導體裝置120之區域形成二個對準標記102之製造方法,但不限定於此製造方法。舉例而言,對於配置單一個半導體裝置120之區域設置至少一個以上之對準標記102即可。對於配置單一個半導體裝置120之區域亦可設置三個以上之對準標記102。
對準標記102之形成方法,亦能夠使用上述光微影及蝕刻以外之形成方法。舉例而言,亦可自支撐基材100之正面進行雷射照射,以形成對準標記102。雷射照射之一種情況中,能夠藉由不使用遮罩而以掃描雷射光之方式,使用雷射直接描繪裝置對支撐基材100進行直接描繪。另亦能夠使用具有對應於對準標記102之形狀之模具形成支撐基材100。
圖3為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於支撐基材形成接合層之工程之圖。於形成有對準標記102之支撐基材100之上表面形成接合層110。可貼附做為接合層110之片狀接合層。亦可藉由塗布法塗布溶解有做為接合層110之接合層材料之溶液,而形成接合層110。圖3中,雖然於對準標記102之凹部形成有空洞,但因於後續工程中將去除位於形成有對準標記102之區域之接合層110,故於此工程中接合層110亦可嵌入對準標記102之凹部。
圖4為繪示關於本發明之一實施型態之半導體封裝件之製造方法中粗糙化支撐基材之背面及側面之工程之圖。後續工程中,可藉由非電解鍍覆法形成之鍍覆層,為了抑制此鍍覆層剝離之目的,故而粗糙化(或表面粗糙化)支撐基材100之背面及側面。支撐基材100之粗糙化能夠使用含有Cu之藥液(蝕刻劑)而進行。於圖4中,以虛線表示粗糙化區域104。
以下將更詳細說明關於支撐基材100之粗糙化。支撐基材使用SUS基材之場合中,令SUS基材之正面非導體化。上述蝕刻劑所含有之Cu離子可置換SUS基材中之Fe、Cr、Ni之至少一個。藉由Cu離子與Fe、Cr、Ni之至少一個間之置換,以蝕刻SUS。然而,由於為局部進行SUS之蝕刻,故會不均勻地蝕刻SUS。因此,蝕刻後可擴大SUS表面之凹凸情形。換言之,藉由以圖4所示之狀態浸漬於蝕刻劑,而能夠於相同處理中粗糙化SUS基材之背面及側面。
於此,雖例示於貼附接合層110之後進行SUS基材之粗糙化之製造方法,但並非限定於此製造方法。舉例而言,亦可於貼附接合層110之前或於形成對準標記102之前進行SUS基材之粗糙化。
圖5為繪示關於本發明之一實施型態之半導體封裝件之製造方法中去除接合層之一部分之工程之圖。為了更為精確地讀取對準標記102,去除對準標記102上方之接合層110而形成開口部112。能夠例如使用二氧化碳雷射照射雷射光而造成昇華或消融(ablation),藉以進行接合層110之去除。亦能夠藉由光微影及蝕刻而形成開口部112。為了確實露出對準標記102,而形成範圍大於對準標記102之開口部112。亦即,開口部112可露出支撐基材100之上表面(形成有對準標記102之表面)。換言之,於俯視時,以開口部112之外緣圍繞對準標記102之外緣之方式形成開口部112。
圖6為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於支撐基材上配置半導體裝置之工程之圖。根據如上所述而露出之對準標記102進行位置配合,而經由接合層110將上表面具有外部端子122之半導體裝置120配置於支撐基材100。舉例而言,能夠藉由光學顯微鏡、CCD相機、電子顯微鏡等方法進行對準標記102之讀取。藉此方法,能夠實現以高對準精確度裝設半導體裝置120之技術內容。
圖7為繪示關於本發明之一實施型態之半導體封裝件之製造方法中形成樹脂絕緣層之工程之圖。藉由貼附絕緣性片狀膜,而形成第一樹脂絕緣層130。具體而言,將此片狀膜貼附於裝設有半導體裝置120之支撐基材100之後,藉由加熱處理以溶化此片狀膜。藉由加壓處理而將溶化之片狀膜嵌入對準標記102之凹部。藉由此加熱處理及加壓處理,而自上述片狀膜獲得圖7所示之第一樹脂絕緣層130。第一樹脂絕緣層130以嵌入於開口部112及對準標記102之凹部之方式而形成。換言之,第一樹脂絕緣層130以接觸於開口部112之側壁之方式而形成。同樣地,第一樹脂絕緣層130以接觸於對準標記102之凹部之側壁之方式而形成。第一樹脂絕緣層130之膜厚以第一樹脂絕緣層130可覆蓋半導體裝置120之方式設定。換言之,第一樹脂絕緣層130之膜厚大於半導體裝置120之厚度(高度)。第一樹脂絕緣層130因可緩和(平坦化)由半導體裝置120、接合層110等所形成之段差,故亦可稱之為平坦化膜。
第一樹脂絕緣層130可防止半導體裝置120及外部端子122與配線140導通。換言之,半導體裝置120及外部端子122與配線140間設置有間隔(gap)。若第一樹脂絕緣層130可配置於半導體裝置120及外部端子122之至少上表面及側面,則第一樹脂絕緣層130之厚度亦可小於半導體裝置120之厚度。於圖7之說明中,雖例示藉由貼附片狀膜而形成第一樹脂絕緣層130之製造方法,但並非限定於此方法。舉例而言,能夠藉由旋塗法、浸漬法、噴墨法、蒸鍍法等多種方法形成第一樹脂絕緣層130。
圖8為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於樹脂絕緣層上形成導電層之工程之圖。於第一樹脂絕緣層130之上表面貼附具有導電性之片狀膜。此導電性膜體可為第一導電層142之一部分。於此,雖例示藉由膜體貼附而形成第一導電層142之製造方法,但並非限定於此方法。舉例而言,第一導電層142亦可藉由鍍覆法或物理蒸鍍法(Physical Vapor Deposition,PVD法)而形成。PVD法能夠使用濺射法、真空蒸鍍法、電子束蒸鍍法及分子束磊晶(epitaxy)法等方法。第一導電層142亦可藉由塗布溶解有具導電性樹脂材料之溶液而形成。
圖9為繪示關於本發明之一實施型態之半導體封裝件之製造方法中粗糙化導電層表面之工程之圖。如圖9所示,粗糙化形成於第一樹脂絕緣層130上之第一導電層142之表面。第一導電層142表面之粗糙化能夠藉由使用氯化鐵(FeCl3)藥液之蝕刻而進行。於圖9中,以虛線表示粗糙化區域146。
圖10為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於樹脂絕緣層形成開口部之工程之圖。如圖10所示,藉由對於第一導電層142表面之粗糙化區域146之於對應外部端子122之位置照射雷射,而形成露出外部端子122之開口部132。開口部132之形成步驟能夠一併對於第一導電層142及第一樹脂絕緣層130進行。用以形成開口部132之雷射能夠使用二氧化碳雷射。二氧化碳雷射可配合開口部132之尺寸而調整光點直徑及能量,且能以多次脈衝照射。藉由於第一導電層142之表面形成粗糙化區域146,而使第一導電層142能夠有效率地吸收所照射之雷射光之能量。雷射光可照射於外部端子122之內側。換言之,雷射光以不超出外部端子122圖案之方式照射。於企圖加工半導體裝置120之一部分之場合中,雷射光之一部分亦可特意地以超出外部端子122之外側之方式照射。
於圖10中雖例示所開口之第一導電層142之側壁與第一樹脂絕緣層130之側壁為連續之構造,但並非限定於此構造。舉例而言,藉由雷射照射而開口之場合中,相較於第一導電層142,第一樹脂絕緣層130有沿支撐基材100之平面方向(擴大開口徑之方向)後退較多之場合。亦即,其構造亦可為第一導電層142之端部比第一樹脂絕緣層130之端部更為朝向開口部132之內側方向凸出之構造。換言之,第一導電層142亦可為凸出之屋簷形狀。再換言之,於形成開口部132之時間點,第一導電層142之一部分之下表面亦可露出於開口部132之內部。此時,凸出之第一導電層142亦可為朝向開口部132內部之外部端子122之方向彎折之形狀。
圖11為繪示關於本發明之一實施型態之半導體封裝件之製造方法中去除導電層表面之粗糙化區域且去除開口底部殘渣之工程之圖。首先,於形成開口部132之後去除第一導電層142表面之粗糙化區域146。粗糙化區域146之去除步驟能夠藉由酸處理而進行。接續粗糙化區域146之去除步驟,而去除開口部132之底部之殘渣(smear)。去除殘渣(desmear)之步驟將以二階段之工程進行。
以下將詳細說明關於去除開口部132底部殘渣之方法。首先,對開口部132之底部進行電漿處理。電漿處理能夠使用含有氟(CF4)氣體及氧(O2)氣體之電漿處理。藉由電漿處理,而可主要去除於開口部132形成時並未去除乾淨之第一樹脂絕緣層130。此時,能夠去於形成開口部132時所產生之第一樹脂絕緣層130之變質層。舉例而言,以雷射照射形成開口部132之場合中,因雷射能量而變質之第一樹脂絕緣層130可能會殘留於開口部132之底部。藉由進行如上所述之電漿處理,而能夠有效率地去除上述之變質層。
接續上述之電漿處理,進行藥液處理。藥液處理能夠使用過錳酸鈉或過錳酸鉀。藉由藥液處理,而能夠去除藉由上述電漿處理仍未去除乾淨之殘渣。舉例而言,能夠去除第一樹脂絕緣層130所含有且上述電漿處理未能夠去除之填充物。過錳酸鈉或過錳酸鉀為具有蝕刻殘渣之作用之蝕刻液。於以上述蝕刻液進行處理之前,能夠使用膨潤液以令第一樹脂絕緣層130膨潤。於以上述蝕刻液進行處理之後,能夠使用中和液以中和蝕刻液。
藉由使用膨潤液,可提升用以擴張樹脂環之液體之濕潤性。藉此,能夠抑制不蝕刻之區域受到蝕刻之情形。藉由使用中和液,因能夠有效率地去除蝕刻液,而能夠抑制非預期之蝕刻之進行。舉例而言,使用鹼性藥液做為蝕刻液之場合中,因鹼性藥液難以藉由水洗而去除,故可能會有非預期之蝕刻持續進行之情形。若於蝕刻後使用中和液,即使於如此之場合中,亦能夠抑制非預期之蝕刻之進行。
膨潤液能夠使用二甘醇單丁基醚(diethyleneglycol monobutylether)、乙二醇(ethyleneglycol)等之有機溶劑。中和液能夠使用硫酸羥胺(hydroxylamine)等之硫酸系藥液。
舉例而言,於第一樹脂絕緣層130使用無機材料之填充物之場合中,填充物無法藉由電漿處理而去除,而有成為殘渣之場合。藉由於電漿處理之後進行藥液處理,即使於如此之場合中,亦能夠去除由填充物造成之殘渣。
圖12為繪示關於本發明之一實施型態之半導體封裝件之製造方法中藉由非電解鍍覆法形成導電層之工程之圖。藉由非電解鍍覆法可形成鍍覆層200(導電體),以連接至上述去除殘渣工程後所露出之外部端子122。非電解鍍覆法之一種方法,可為令鈀(Pd)膠體吸附於樹脂上,並浸漬於含Cu之藥液中,且藉由Pd與Cu置換以析出Cu之方法。因去除了粗糙化區域146,故藉由非電解鍍覆法形成鍍覆層200能夠提升鍍覆層200對於第一導電層142之密合性。
圖13為繪示關於本發明之一實施型態之半導體封裝件之製造方法中形成感光性光阻劑之工程之圖。如圖13所示,於鍍覆層200上形成感光性光阻劑210。光阻劑能夠藉由旋塗法等塗布法而形成。於形成光阻劑之前,亦可進行用以提升鍍覆層200與光阻劑210間之密合性之處理(HMDS處理等之疏水化表面處理)。光阻劑210亦能夠使用感光區域對於顯像液難以蝕刻之負型光阻劑,另亦能夠使用感光區域可藉由顯像液蝕刻之正型光阻劑。
圖14為繪示關於本發明之一實施型態之半導體封裝件之製造方法中藉由光微影去除感光性光阻劑之一部分之工程之圖。對於所塗布之光阻劑210進行曝光及顯影,而去除位於用以形成圖1所示之配線140之區域之光阻劑210,且形成如圖14所示之阻劑圖案220。其中,於進行用以形成阻劑圖案220之曝光步驟時,可使用形成於支撐基材100之對準標記102進行位置配合。
圖15為繪示關於本發明之一實施型態之半導體封裝件之製造方法中藉由電解鍍覆法形成導電層之工程之圖。於形成阻劑圖案220之後,可對於由非電解鍍覆法而形成之鍍覆層200通電以進行電解鍍覆法,且進一步成長自阻劑圖案220露出之鍍覆層200,以令其厚膜化而形成第二導電層144。因會藉由全面蝕刻而去除阻劑圖案220下之第一導電層142及鍍覆層200,故厚膜化之第二導電層144亦會減少膜厚。因此,可考量上述之減少膜厚之量而調整厚膜化之第二導電層144之量。
圖16為繪示關於本發明之一實施型態之半導體封裝件之製造方法中去除感光性光阻劑之工程之圖。如圖16所示,厚膜化鍍覆層200而形成第二導電層144之後,可藉由有機溶劑去除構成阻劑圖案220之光阻劑。光阻劑之去除步驟能夠不使用有機溶劑,而能夠改為使用藉由氧電漿之灰化(ashing)步驟。藉由去除光阻劑,而能夠得到形成第二導電層144之厚膜區域230及僅形成鍍覆層200之薄膜區域240。其中,因厚膜區域230為於鍍覆層200上藉由電解鍍覆法而厚膜化之鍍覆層,故嚴格來說為以二層形成第二導電層144,但此圖中以並未區別此二層之方式繪示。
圖17為繪示關於本發明之一實施型態之半導體封裝件之製造方法中去除導電層之一部分以形成配線之工程之圖。如圖17所示,去除(蝕刻)由阻劑圖案220覆蓋而未厚膜化之區域之鍍覆層200及第一導電層142,以電性分離各個配線140。藉由蝕刻鍍覆層200及第一導電層142,因厚膜區域230之第二導電層144之表面亦受到蝕刻而薄膜化,故可考量此薄膜化之影響而設定第二導電層144之膜厚。此工程中之蝕刻步驟能夠使用濕蝕刻或乾蝕刻。圖17中雖例示形成單一層配線140之製造方法,但並非限定於此方法。配線140之上方亦可堆疊絕緣層及導電層,而可形成堆疊多層配線層之多層配線。此時,每次形成配線層時亦可形成新的對準標記,而於形成上層配線層時之位置配合時亦可加以利用。
圖18為繪示關於本發明之一實施型態之半導體封裝件之製造方法中形成覆蓋配線之樹脂絕緣層之工程之圖。第二樹脂絕緣層150與第一樹脂絕緣層130同樣地,可貼附絕緣性之片狀膜且藉由進行加熱、加壓處理而形成。第二樹脂絕緣層150之膜厚能以第二樹脂絕緣層150覆蓋配線140之方式設定。換言之,第二樹脂絕緣層150之膜厚大於配線140之厚度。第二樹脂絕緣層150因可緩和(平坦化)由配線140等所形成之段差,故亦可稱之為平坦化膜。
第二樹脂絕緣層150可防止配線140與焊料球160導通。換言之,配線140與焊料球160間設置有間隔。若第二樹脂絕緣層150可配置於配線140之至少上表面及側面,則第二樹脂絕緣層150之厚度亦可小於配線140之厚度。於圖18之說明中,雖例示藉由貼附片狀膜而形成第二樹脂絕緣層150之製造方法,但並非限定於此方法。舉例而言,能夠藉由旋塗法、浸漬法、噴墨法、蒸鍍法等多種方法形成第二樹脂絕緣層150。
圖19為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於樹脂絕緣層形成露出配線之開口部之工程之圖。如圖19所示,於第二樹脂絕緣層150形成露出配線140之開口部152。開口部152亦可藉由光微影及蝕刻而形成。第二樹脂絕緣層150使用感光性樹脂之場合中,亦可藉由曝光及顯影而形成開口部152。對於第一樹脂絕緣層130之開口部132所進行之去除殘渣處理亦可對於開口部152進行。以與配線140相同工程而形成對準標記,藉由根據此對準標記所進行之位置配合,而能夠形成開口部152。
圖20為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於對應露出配線之位置配置焊料球之工程之圖。如圖20所示,對於開口部152配置焊料球160。圖20中雖例示對於單一個開口部152配置單一個焊料球160之製造方法,但並非限定於此方法。舉例而言,亦可於單一個開口部152配置多個焊料球160。圖20中雖例示於將焊料球160配置於開口部152之階段中焊料球160接觸於配線140之製造方法,但並非限定於此方法。舉例而言,於圖20所示之階段中,焊料球160亦可不接觸於配線140。以與配線140相同工程而形成對準標記,藉由根據此對準標記所進行之位置配合,而能夠配置焊料球160。
圖21為繪示關於本發明之一實施型態之半導體封裝件之製造方法中回焊(reflow)焊料球之工程之圖。於圖20所示之狀態下進行熱處理,以使焊料球160回焊。所謂之回焊為藉由令固體對象物之至少一部分液態化而持有流動性,以令對象物流入凹部之內部。藉由回焊焊料球160,而能夠於開口部152之內部所露出之配線140之上表面之整個區域令焊料球160與配線140彼此接觸。
圖22為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於樹脂絕緣層形成到達支撐基材之溝槽之工程之圖。於此,使用切割刀片(dicing blade,例如為鑽石製之圓形旋轉刀)對於接合層110、第一樹脂絕緣層130及第二樹脂絕緣層150切入切口250。藉由高速旋轉切割刀片進行切割且同時流動純水以冷卻並清洗切削屑,藉以形成切口250。圖22中於接合層110、第一樹脂絕緣層130及第二樹脂絕緣層150形成切口250。然而,亦能以到達支撐基材100之方式切割而形成切口250。換言之,亦可藉由切割而於支撐基材100之上表面附近形成凹部。另外,亦能以殘留接合層110之一部分或殘留接合層110及第一樹脂絕緣層130之一部分之方式切割。
圖23為繪示關於本發明之一實施型態之半導體封裝件之製造方法中切斷支撐基材以單片化半導體封裝件之工程之圖。如圖23所示,藉由自支撐基材100之背面方向(與配置有半導體裝置120之方向相反之方向)照射雷射,以單片化半導體封裝件。照射至支撐基材100之雷射能夠使用二氧化碳雷射。藉由根據支撐基材100之對準標記102所進行之位置配合,而能夠進行雷射照射。此雷射為對於俯視時較切口250更為狹窄之區域照射之雷射。
於此雖例示自支撐基材100之背面方向進行雷射照射之製造方法,但並非限定於此方法。舉例而言,亦可自支撐基材100之正面方向經過切口250,而自支撐基材100之正面方向進行雷射照射。上述雖例示對於俯視時較切口250更為狹窄之區域照射雷射之製造方法,但並非限定於此方法。舉例而言,亦可對於俯視時與形成切口250之區域相同之區域照射雷射,亦可對於範圍更大之區域照射雷射。
於此支撐基材100使用金屬基材之場合中,若一併加工接合層110、第一樹脂絕緣層130、第二樹脂絕緣層150及支撐基材100,則可能會增加切割刀片之消耗,而可能會縮短切割刀片之使用壽命。此外,若藉由切割刀片機械加工金屬基材,於加工端之角隅形狀可能會產生銳利的「毛邊」,作業員於操作時可能會受傷而有其危險性。然而,藉由雷射加工支撐基材100,則能夠抑制切割刀片之消耗,還能夠使支撐基材100加工端之形狀滑順。因此,特別是於使用金屬基材做為支撐基材100之場合中,可如上所述,以切割刀片加工支撐基材100上之構造物,且以雷射加工支撐基材100。
如上所述,若根據關於實施型態1之半導體封裝件之製造方法,則能夠藉由於支撐基材100配置半導體裝置120之前於支撐基材100形成對準標記,而能夠提升半導體裝置120之配置時之對準精確度。因此,若根據關於實施型態1之半導體封裝件之製造方法,則能夠提供一種半導體封裝件之製造方法,其能夠於將半導體裝置配置於基材時獲得高對準精確度。
以下將說明實施型態2。
關於本發明之實施型態2之半導體封裝件之製造方法中配置半導體裝置時之對準方法,以下將參照圖24詳細說明。圖24為繪示關於本發明之一實施型態之對準標記與半導體裝置間之位置關係之俯視示意圖。圖24中雖為了說明上的方便而僅標示支撐基材(300)、半導體裝置(320、322)及對準標記(302、304、306),但其能夠具有與圖1A同樣之構造。
以下將說明半導體封裝件20之構造。
如圖24所示,半導體封裝件20於支撐基材300上設置位於第一半導體裝置320及第二半導體裝置322之周圍之第一對準標記302(第一凹部)、第二對準標記304(第二凹部)及第三對準標記306(第三凹部)。以對應第一半導體裝置320之對角之位置設置第一對準標記302及第二對準標記304,且以對應第二半導體裝置322之對角之位置設置第二對準標記304及第三對準標記306。換言之,第一半導體裝置320與第二半導體裝置322之間設置有第二對準標記304。
以下將說明半導體封裝件20之製造工程中之對準方法。
關於第一半導體裝置320及第二半導體裝置322之對準方法,以下將使用圖24進行詳細說明。首先,藉由與圖2所示之方法同樣之方法,於支撐基材300形成第一對準標記302、第二對準標記304及第三對準標記306。接下來,藉由與圖6所示之方法同樣之方法,根據第一對準標記302及第二對準標記304進行位置配合以配置第一半導體裝置320,且根據第二對準標記304及第三對準標記306進行位置配合以配置第二半導體裝置322。再接下來,形成第一樹脂絕緣層130以覆蓋第一半導體裝置320及第二半導體裝置322。上述以外之製造工程,能夠藉由與圖2~圖23同樣之方法而進行製造。
如上所述,於半導體封裝件20之製造工程中,第一半導體裝置320與第二半導體裝置322共有相同的對準標記。換言之,於半導體封裝件20之製造工程中用來配置半導體裝置(320、322)時之對準標記之數量,可少於實施型態1之半導體封裝件10之製造工程中用來配置半導體裝置120時之對準標記之數量。再換言之,於實施型態1之半導體封裝件10之製造方法中配置單一個半導體裝置120時雖使用二個對準標記102,但於半導體封裝件20之製造方法中配置二個半導體裝置(320、322)時則可使用三個對準標記(302、304、306)。亦即,於半導體封裝件20之製造方法中配置單一個半導體裝置時能夠使用1.5個對準標記進行位置配合。換言之,於半導體封裝件20之製造方法中配置單一個半導體裝置時能夠使用未滿二個之對準標記進行位置配合。
半導體封裝件20之製造工程中,於單片化各個半導體封裝件20時,亦能以第二對準標記304包含於接近第一半導體裝置320之位置或接近第二半導體裝置322之位置之任一者之方式切斷支撐基材300。於單片化各個半導體封裝件20時,亦可切斷第二對準標記304,而以第二對準標記304之一部分包含於接近第一半導體裝置320之位置且第二對準標記304之剩餘部分包含於接近第二半導體裝置322之位置之方式切斷支撐基材300。於單片化各個半導體封裝件20時,第二對準標記304亦可皆不包含於第一半導體裝置320及第二半導體裝置322之任一者。換言之,經過單片化之半導體封裝件20所含有之對準標記之數量亦可未滿二個。
如上所述,若根據關於實施型態2之半導體封裝件20,則能夠降低用以配置半導體裝置之對準標記之數量。因此,於個別形成對準標記之製造方法之場合中,能夠縮短形成對準標記之工程。上述之結構中,即使於難以充分確保用以配置對準標記之區域亦有其效果。
以下將說明實施型態3。
關於本發明之實施型態3之半導體封裝件之製造方法中配置半導體裝置時之對準方法,以下將參照圖25詳細說明。圖25為繪示關於本發明之一實施型態之對準標記與半導體裝置間之位置關係之俯視示意圖。圖25中雖為了說明上的方便而僅標示支撐基材(400)、半導體裝置(420、422、424、426)及對準標記(401、403、405、407、409),但其能夠具有與圖1A同樣之構造。
以下將說明半導體封裝件30之構造。
如圖25所示,半導體封裝件30於支撐基材400上設置位於第一半導體裝置420、第二半導體裝置422、第三半導體裝置424及第四半導體裝置426之周圍之第一對準標記401、第二對準標記403、第三對準標記405、第四對準標記407及第五對準標記409。
以對應第一半導體裝置420之對角之位置設置第一對準標記401及第三對準標記405。以對應第二半導體裝置422之對角之位置設置第二對準標記403及第三對準標記405。以對應第三半導體裝置424之對角之位置設置第三對準標記405及第四對準標記407。以對應第四半導體裝置426之對角之位置設置第三對準標記405及第五對準標記409。換言之,第一半導體裝置420、第二半導體裝置422、第三半導體裝置424與第四半導體裝置426之間設置有第三對準標記405。
以下將說明半導體封裝件30之製造工程中之對準方法。關於第一半導體裝置420、第二半導體裝置422、第三半導體裝置424及第四半導體裝置426之對準方法,以下將使用圖25進行詳細說明。首先,藉由與圖2所示之方法同樣之方法,於支撐基材400形成第一對準標記401、第二對準標記403、第三對準標記405、第四對準標記407及第五對準標記409。接下來,藉由與圖6所示之方法同樣之方法,根據第一對準標記401及第三對準標記405進行位置配合以配置第一半導體裝置420,根據第二對準標記403及第三對準標記405進行位置配合以配置第二半導體裝置422,根據第三對準標記405及第四對準標記407進行位置配合以配置第三半導體裝置424,且根據第三對準標記405及第五對準標記409進行位置配合以配置第四半導體裝置426。再接下來,形成第一樹脂絕緣層130以覆蓋第一半導體裝置420、第二半導體裝置422、第三半導體裝置424及第四半導體裝置426。上述以外之製造工程,能夠藉由與圖2~圖23同樣之方法而進行製造。
如上所述,於半導體封裝件30之製造工程中,第一半導體裝置420、第二半導體裝置422、第三半導體裝置424與第四半導體裝置426分別共有相同的對準標記。換言之,於半導體封裝件30之製造工程中用來配置半導體裝置(420、422、424、426)時之對準標記之數量,可少於實施型態1之半導體封裝件10之製造工程中用來配置半導體裝置120時之對準標記之數量。再換言之,於實施型態1之半導體封裝件10之製造方法中配置單一個半導體裝置120時雖使用二個對準標記102,但於半導體封裝件30之製造方法中配置四個半導體裝置(420、422、424、426)時則可使用五個對準標記(401、403、405、407、409)。亦即,於半導體封裝件30之製造方法中配置單一個半導體裝置時能夠使用1.25個對準標記進行位置配合。換言之,於半導體封裝件30之製造方法中配置單一個半導體裝置時能夠使用未滿二個之對準標記進行位置配合。
半導體封裝件30之製造工程中,於單片化各個半導體封裝件30時,亦能以第三對準標記405包含於接近第一半導體裝置420之位置、接近第二半導體裝置422之位置、接近第三半導體裝置424之位置或接近第四半導體裝置426之位置之任一者之方式切斷支撐基材400。於單片化各個半導體封裝件30時,亦可將第三對準標記405切斷成二個~四個。於單片化各個半導體封裝件30時,第三對準標記405亦可皆不包含於第一半導體裝置420、第二半導體裝置422、第三半導體裝置424及第四半導體裝置426之任一者。換言之,經過單片化之半導體封裝件30所含有之對準標記之數量亦可未滿二個。
如上所述,若根據關於實施型態3之半導體封裝件30,則能夠降低用以配置半導體裝置之對準標記之數量。因此,於個別形成對準標記之製造方法之場合中,能夠縮短形成對準標記之工程。
另外,本發明並非限定於上述之實施型態,於未脫離要旨之範圍中亦能夠進行適當變更。
10、20、30:半導體封裝件
100、300、400:支撐基材
102、302、304、306、401、403、405、407、409:對準標記
104:粗糙化區域
110:接合層
112:開口部
120、320、322、420、422、424、426:半導體裝置
122:外部端子
130:第一樹脂絕緣層
132、152:開口部
140:配線
142:第一導電層
144:第二導電層
146:粗糙化區域
150:第二樹脂絕緣層
160:焊料球
200:鍍覆層
210:光阻劑
220:阻劑圖案
230:厚膜區域
240:薄膜區域
250:切口
[圖1A]為關於本發明之一實施型態之半導體封裝件之剖面示意圖。
[圖1B]為繪示關於本發明之一實施型態之對準標記與半導體裝置間之位置關係之俯視示意圖。
[圖2]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於支撐基材形成對準標記之工程之圖。
[圖3]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於支撐基材形成接合層之工程之圖。
[圖4]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中粗糙化支撐基材之背面及側面之工程之圖。
[圖5]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中去除接合層之一部分之工程之圖。
[圖6]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於支撐基材上配置半導體裝置之工程之圖。
[圖7]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中形成樹脂絕緣層之工程之圖。
[圖8]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於樹脂絕緣層上形成導電層之工程之圖。
[圖9]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中粗糙化導電層表面之工程之圖。
[圖10]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於樹脂絕緣層形成開口部之工程之圖。
[圖11]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中去除導電層表面之粗糙化區域且去除開口底部殘渣之工程之圖。
[圖12]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中藉由非電解鍍覆法形成導電層之工程之圖。
[圖13]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中形成感光性光阻劑之工程之圖。
[圖14]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中藉由光微影去除感光性光阻劑之一部分之工程之圖。
[圖15]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中藉由電解鍍覆法形成導電層之工程之圖。
[圖16]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中去除感光性光阻劑之工程之圖。
[圖17]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中去除導電層之一部分以形成配線之工程之圖。
[圖18]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中形成覆蓋配線之樹脂絕緣層之工程之圖。
[圖19]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於樹脂絕緣層形成露出配線之開口部之工程之圖。
[圖20]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於對應露出配線之位置配置焊料球之工程之圖。
[圖21]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中回焊焊料球之工程之圖。
[圖22]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中於樹脂絕緣層形成到達支撐基材之溝槽之工程之圖。
[圖23]為繪示關於本發明之一實施型態之半導體封裝件之製造方法中切斷支撐基材以單片化半導體封裝件之工程之圖。
[圖24]為繪示關於本發明之一實施型態之對準標記與半導體裝置間之位置關係之俯視示意圖。
[圖25]為繪示關於本發明之一實施型態之對準標記與半導體裝置間之位置關係之俯視示意圖。
10:半導體封裝件
100:支撐基材
102:對準標記
110:接合層
112:開口部
120:半導體裝置
122:外部端子
130:第一樹脂絕緣層
132:開口部
140:配線
142:第一導電層
144:第二導電層
150:第二樹脂絕緣層
152:開口部
160:焊料球
Claims (20)
- 一種半導體封裝件,包括:基材,該基材具有包含凹部結構的第一表面;半導體裝置,包括:裝置頂側;裝置底側,該裝置底側藉由接合結構而耦接到該基材的該第一表面;以及外部端子,其在該裝置頂側處,其中:該接合結構具有使該凹部結構露出的開口部;以及在該凹部結構之外的該第一表面的部分是在該開口部中露出;樹脂絕緣結構,該樹脂絕緣結構覆蓋該半導體裝置以及該基材的部分;導電配線,所述導電配線在該樹脂絕緣結構上方並且經由該樹脂絕緣結構而耦接到該外部端子;絕緣結構,其在所述導電配線上方;以及導電結構,所述導電結構經由該絕緣結構而耦接到所述導電配線。
- 如請求項1所述的半導體封裝件,其中:該半導體裝置在該凹部結構外部。
- 如請求項1所述的半導體封裝件,其中:在平面視圖中,該開口的邊緣圍繞該凹部結構,並且任何包含導電材料且連接到該半導體裝置的結構沒有位於該開口處。
- 如請求項1所述的半導體封裝件,其中:該裝置頂側在該基材的該第一表面上方。
- 如請求項1所述的半導體封裝件,其中:該基材包括相對於該第一表面的第二表面;並且 該第二表面沒有該樹脂絕緣結構。
- 如請求項5所述的半導體封裝件,其中:該基材包括延伸在該第一表面和該第二表面之間的側表面;並且該基材的該側表面沒有樹脂絕緣結構。
- 如請求項1所述的半導體封裝件,其中:該樹脂絕緣結構接觸該凹部結構的側壁和該開口部的側壁。
- 如請求項1所述的半導體封裝件,其中:該樹脂絕緣結構填充該凹部結構的內部。
- 如請求項1所述的半導體封裝件,其中:該凹部結構是對準標記。
- 如請求項1所述的半導體封裝件,其中:該基材包括沒有內部絕緣層的金屬板結構。
- 如請求項1所述的半導體封裝件,其中:所述導電配線是鍍覆結構。
- 如請求項1所述的半導體封裝件,其中:該凹部結構具有僅與該半導體裝置之在對角上相對的角部相鄰的部分。
- 一種半導體封裝件,包括:基材,該基材具有包含凹部結構的第一表面,其中該基材包括金屬板結構;接合層,該接合層在該第一表面上方且具有開口部,該開口部使該凹部結構露出並且使在該凹部結構之外的該第一表面的部分露出;半導體裝置,其耦接到該第一表面並且包括:裝置頂側;裝置底側,其耦接到該接合層的部分;以及外部端子,其在該裝置頂側處; 樹脂絕緣層,其覆蓋該半導體裝置、在該半導體裝置之外的該接合層的部分以及在該開口部中露出的該基板的該第一表面;導電配線,其在該樹脂絕緣層上方並且經由該樹脂絕緣層而耦接到該外部端子;以及在所述導電配線上方的絕緣層。
- 如請求項13所述的半導體封裝件,其中:導電結構藉由該絕緣層而耦接到所述導電配線。
- 如請求項13所述的半導體封裝件,其中:該基材包括延伸在該第一表面和該第二表面之間的側表面;並且該基材的該側表面沒有該樹脂絕緣層。
- 如請求項13所述的半導體封裝件,其中:該樹脂絕緣層與該凹部結構的側壁和該開口部的側壁接觸;該導電配線藉由在該樹脂絕緣層中的該開口部而耦接到該外部端子;該導電配線包括第一導體和第二導體;以及該第二導體是在該開口部中,但是該開口部沒有該第一導體。
- 如請求項13所述的半導體封裝件,其中:該凹部結構具有與該半導體裝置的相對側相鄰的部分。
- 一種製造半導體封裝件之方法,包括:提供基材,該基材具有包含凹部結構的第一表面以及在該第一表面上方的接合層,其中:該接合層具有開口部,該開口部使該凹部結構露出並且使在該凹部結構之外的該第一表面的部分露出;將半導體裝置耦接到該接合層,並且該半導體裝置包括:裝置頂側; 裝置底側,其與該裝置頂側相對;以及外部端子,其在該裝置頂側處;提供樹脂絕緣層,該樹脂絕緣層覆蓋該半導體裝置以及該基材的部分;提供導電配線於該樹脂絕緣層上方並且經由該樹脂絕緣層而將所述導電配線耦接到該外部端子;提供絕緣層於所述導電配線上方;以及提供導電結構,該導電配線藉由該絕緣層而耦接到所述導電配線。
- 如請求項18所述之方法,其中:提供該基材包括提供該凹部結構具有與半導體裝置的相對側相鄰的部分。
- 如請求項18所述之方法,其中:提供該導電配線包括:在該樹脂絕緣層中且在該外部端子上方提供開口部;在該樹脂絕緣層上方但是不在該開口部中提供第一導體;以及在該第一導體上方且在該開口部中提供與該外部端子耦接的第二導體。
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