JP2017199823A - 半導体パッケージ及び半導体パッケージの製造方法 - Google Patents
半導体パッケージ及び半導体パッケージの製造方法 Download PDFInfo
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- JP2017199823A JP2017199823A JP2016090189A JP2016090189A JP2017199823A JP 2017199823 A JP2017199823 A JP 2017199823A JP 2016090189 A JP2016090189 A JP 2016090189A JP 2016090189 A JP2016090189 A JP 2016090189A JP 2017199823 A JP2017199823 A JP 2017199823A
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Abstract
【解決手段】半導体パッケージは、少なくとも1つの凹部が設けられた基材と、基材の凹部が設けられた面側に配置された半導体装置と、半導体装置を覆う樹脂絶縁層と、を有する。半導体パッケージは、基材と半導体装置との間に接着層をさらに有していてもよい。また、接着層は、凹部を露出する開口部を有し、樹脂絶縁層は、開口部の側壁に接していてもよい。
【選択図】図1A
Description
本発明の実施形態1に係る半導体パッケージの概要について、図1A及び図1Bを参照しながら詳細に説明する。図1Aは、本発明の一実施形態に係る半導体パッケージの断面模式図である。図1Bは、本発明の一実施形態に係るアライメントマーカと半導体装置との位置関係を示す平面模式図である。なお、図1Bでは、説明の便宜上半導体装置120よりも上層の、例えば配線140及びはんだボール160は省略して図示した。
図1Aに示すように、半導体パッケージ10は、支持基材100、接着層110、半導体装置120、第1樹脂絶縁層130、配線140、第2樹脂絶縁層150、及びはんだボール160を有する。また、図1Bに示すように、支持基材100上において、半導体装置120の周囲にアライメントマーカ102が設けられている。図1Bでは、アライメントマーカ102は半導体装置120の対角に対応する位置に2つ設けられている。
図1A及び図1Bに示す半導体パッケージ10に含まれる各部材(各層)の材料について詳細に説明する。
図2乃至図23を用いて、本発明の実施形態1に係る半導体パッケージ10の製造方法を説明する。図2乃至図23において、図1A及び図1Bに示す要素と同じ要素には同一の符号を付した。ここで、支持基材100としてSUS基材、第1樹脂絶縁層130としてエポキシ系樹脂、第1導電層142及び、第2導電層144としてCu、はんだボール160として上記Sn合金を使用して半導体パッケージを作製する製造方法について説明する。
本発明の実施形態2に係る半導体パッケージの製造方法において、半導体装置を配置する際のアライメント方法について、図24を参照しながら詳細に説明する。図24は、本発明の一実施形態に係るアライメントマーカと半導体装置との位置関係を示す平面模式図である。図24では、説明の便宜上、支持基材(300)、半導体装置(320、322)、及びアライメントマーカ(302、304、306)のみを表示したが、図1Aと同様の構造とすることができる。
図24に示すように、半導体パッケージ20は、支持基材300上において、第1半導体装置320及び第2半導体装置322の周囲に第1アライメントマーカ302(第1凹部)、第2アライメントマーカ304(第2凹部)、及び第3アライメントマーカ306(第3凹部)が設けられている。第1アライメントマーカ302及び第2アライメントマーカ304は第1半導体装置320の対角に対応する位置に設けられており、第2アライメントマーカ304及び第3アライメントマーカ306は第2半導体装置322の対角に対応する位置に設けられている。換言すると、第1半導体装置320と第2半導体装置322との間に第2アライメントマーカ304が設けられている。
図24を用いて、第1半導体装置320及び第2半導体装置322のアライメント方法について詳細に説明する。まず、図2に示した方法と同様の方法で支持基材300に第1アライメントマーカ302、第2アライメントマーカ304、及び第3アライメントマーカ306を形成する。次に、図6に示した方法と同様の方法で第1アライメントマーカ302及び第2アライメントマーカ304に基づいて位置合わせを行って第1半導体装置320を配置し、第2アライメントマーカ304及び第3アライメントマーカ306に基づいて位置合わせを行って第2半導体装置322を配置する。そして、第1半導体装置320及び第2半導体装置322を覆う第1樹脂絶縁層130を形成する。上記以外の製造工程は、図2〜図23と同様の方法で製造することができる。
本発明の実施形態3に係る半導体パッケージの製造方法において、半導体装置を配置する際のアライメント方法について、図25を参照しながら詳細に説明する。図25は、本発明の一実施形態に係るアライメントマーカと半導体装置との位置関係を示す平面模式図である。図25では、説明の便宜上、支持基材(400)、半導体装置(420、422、424、426)、及びアライメントマーカ(401、403、405、407、409)のみを表示したが、図1Aと同様の構造とすることができる。
図25に示すように、半導体パッケージ30は、支持基材400上において、第1半導体装置420、第2半導体装置422、第3半導体装置424、及び第4半導体装置426の周囲に第1アライメントマーカ401、第2アライメントマーカ403、第3アライメントマーカ405、第4アライメントマーカ407、及び第5アライメントマーカ409が設けられている。
図25を用いて、第1半導体装置420、第2半導体装置422、第3半導体装置424、及び第4半導体装置426のアライメント方法について詳細に説明する。まず、図2に示した方法と同様の方法で支持基材400に第1アライメントマーカ401、第2アライメントマーカ403、第3アライメントマーカ405、第4アライメントマーカ407、及び第5アライメントマーカ409を形成する。次に、図6に示した方法と同様の方法で第1アライメントマーカ401及び第3アライメントマーカ405に基づいて位置合わせを行って第1半導体装置420を配置し、第2アライメントマーカ403及び第3アライメントマーカ405に基づいて位置合わせを行って第2半導体装置422を配置し、第3アライメントマーカ405及び第4アライメントマーカ407に基づいて位置合わせを行って第3半導体装置424を配置し、第3アライメントマーカ405及び第5アライメントマーカ409に基づいて位置合わせを行って第4半導体装置426を配置する。そして、第1半導体装置420、第2半導体装置422、第3半導体装置424、及び第4半導体装置426を覆う第1樹脂絶縁層130を形成する。上記以外の製造工程は、図2〜図23と同様の方法で製造することができる。
100、300、400:支持基材
102、302、304、306、401、403、405、407、409:アライメントマーカ
104:粗化領域
110:接着層
112:開口部
120、320、322、420、422、424、426:半導体装置
122:外部端子
130:第1樹脂絶縁層
132、152:開口部
140:配線
142:第1導電層
144:第2導電層
146:粗化領域
150:第2樹脂絶縁層
160:はんだボール
200:めっき層
210:フォトレジスト
220:レジストパターン
230:厚膜領域
240:薄膜領域
250:切り込み
Claims (11)
- 少なくとも1つの凹部が設けられた基材と、
前記基材の前記凹部が設けられた面側に配置された半導体装置と、
前記半導体装置を覆う樹脂絶縁層と、
を有することを特徴とする半導体パッケージ。 - 前記基材と前記半導体装置との間に配置された接着層をさらに有することを特徴とする請求項1に記載の半導体パッケージ。
- 前記接着層は、前記凹部を露出する開口部を有し、
前記樹脂絶縁層は、前記開口部の側壁に接していることを特徴とする請求項2に記載の半導体パッケージ。 - 前記凹部は2つ以上設けられ、前記半導体装置のそれぞれ対角に対応する位置に設けられていることを特徴とする請求項1に記載の半導体パッケージ
- 基材に少なくとも1つの凹部を形成し、
前記凹部に基づいて位置合わせして、半導体装置を前記基材の前記凹部が形成された面側に配置し、
前記半導体装置を覆う樹脂絶縁層を形成することを特徴とする半導体パッケージの製造方法。 - 前記凹部が形成された前記基材上に接着層をさらに形成し、
前記半導体装置は前記接着層上に配置されることを特徴とする請求項5に記載の半導体パッケージの製造方法。 - 前記接着層に前記凹部を露出する開口部をさらに形成し、
前記樹脂絶縁層は、前記開口部の側壁に接するように形成されることを特徴とする請求項6に記載の半導体パッケージの製造方法。 - 前記凹部は、2つ以上形成され、
前記位置合わせは、前記2つ以上の前記凹部に基づいて行われることを特徴とする請求項5に記載の半導体パッケージの製造方法。 - 基材に第1凹部、第2凹部、及び第3凹部を形成し、
前記第1凹部及び前記第2凹部に基づいて位置合わせして、第1半導体装置を前記基材の前記第1凹部及び前記第2凹部が形成された面側に配置し、
前記第2凹部及び前記第3凹部に基づいて位置合わせして、第2半導体装置を前記基材の前記第2凹部及び前記第3凹部が形成された面側に配置し、
前記第1半導体装置及び前記第2半導体装置を覆う樹脂絶縁層を形成することを特徴とする半導体パッケージの製造方法。 - 前記第1凹部、前記第2凹部、及び前記第3凹部が形成された前記基材上に接着層をさらに形成し、
前記第1半導体装置及び前記第2半導体装置は前記接着層上に配置されることを特徴とする請求項9に記載の半導体パッケージの製造方法。 - 前記接着層に、前記第1凹部を露出する第1開口部、前記第2凹部を露出する第2開口部、及び前記第3凹部を露出する第3開口部をさらに形成し、
前記樹脂絶縁層は、前記第1開口部の側壁、前記第2開口部の側壁、及び前記第3開口部の側壁に接するように形成されることを特徴とする請求項10に記載の半導体パッケージの製造方法。
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