CN107527825B - 半导体封装件的制造方法 - Google Patents
半导体封装件的制造方法 Download PDFInfo
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- CN107527825B CN107527825B CN201710456829.6A CN201710456829A CN107527825B CN 107527825 B CN107527825 B CN 107527825B CN 201710456829 A CN201710456829 A CN 201710456829A CN 107527825 B CN107527825 B CN 107527825B
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Abstract
本发明提供高成品率的半导体封装件的制造方法。半导体封装件的制造方法包括如下步骤:对包含至少一种金属且具有第一面和与所述第一面对置的第二面的基材的所述第一面及位于所述第一面与所述第二面之间的侧面部进行蚀刻,且在所述第一面及所述侧面部附着与所述金属不同的其他金属;在所述基材的所述第二面配置包括外部端子的半导体装置,使得所述外部端子不与所述第二面对置;形成用于覆盖所述半导体装置的树脂绝缘层;在所述树脂绝缘层上形成第一导电层;在所述第一导电层和所述树脂绝缘层形成用于使所述半导体装置的所述外部端子露出的开口部;以及在所述基材的所述第一面和侧面部、所述第一导电层上及所述开口部内形成镀层。
Description
技术领域
本发明涉及半导体封装件的制造方法。尤其是,本发明涉及在基材上的半导体装置的封装技术。
背景技术
以往,在移动电话或智能电话等的电子设备中采用在支承基板上搭载有集成电路(IC)芯片等半导体装置的半导体封装件结构(例如日本特开2010-278334号公报)。在这种半导体封装件中,通常采用如下结构:在支承基材上经由粘接层接合IC芯片或存储器等的半导体装置,并利用密封体(密封用树脂材料)覆盖该半导体装置,由此来保护半导体器件。
作为用于半导体装置的支承基材,采用印刷基材、陶瓷基材等各种基材。尤其是近年来,对于使用金属基材的半导体封装件的开发研究不断推进。在金属基材上搭载有半导体装置并通过再布线来扇出(fan-out)的半导体封装件具有电磁屏蔽性能、热性能优良的优点,作为高可靠性的半导体封装件而备受瞩目。这种半导体封装件还具有封装设计的自由度高的优点。
在支承基材上搭载半导体装置的结构的情况下,通过在大型支承基材上搭载多个半导体装置,能够利用同一工序来制造多个半导体封装件。在这种情况下,形成在支承基材上的多个半导体封装件,在制造过程结束之后被单片化,从而完成各个半导体封装件。像这种在支承基材上搭载有半导体装置的半导体封装件的结构具有生产率高的优点。
发明内容
如上所述,在考虑到使用大型金属基材为支承基材的量产方法的情况下,需要满足如下条件:对该金属基材配置半导体装置时的高对准精度、半导体装置与布线之间的良好的接触、或成品率高的半导体封装件的单片化等。
本发明是鉴于这些问题而提出的,其目的在于提供高成品率的半导体封装件的制造方法。
本发明的一个实施方式的半导体封装件的制造方法包括如下步骤:对包含至少一种金属且具有第一面和与所述第一面对置的第二面的基材的所述第一面及位于所述第一面与所述第二面之间的侧面部进行蚀刻,且在所述第一面及所述侧面部附着与所述金属不同的其他金属;在所述基材的所述第二面配置包括外部端子的半导体装置,使得所述外部端子不与所述第二面对置;形成用于覆盖所述半导体装置的树脂绝缘层;在所述树脂绝缘层上形成第一导电层;在所述第一导电层和所述树脂绝缘层形成用于使所述半导体装置的所述外部端子露出的开口部;以及在所述基材的所述第一面和侧面部、所述第一导电层上及所述开口部内形成镀层。
所述基材可以为不锈钢基材。
所述蚀刻可以为使用包含所述其他金属的离子的蚀刻液的湿法蚀刻。
所述其他金属的离子化倾向可以小于所述基材所包含的至少一种金属的离子化倾向。
可以利用无电解镀敷法来形成所述镀层。
所述镀层可以包含与所述其他金属相同的金属。
还可以包括使所述镀层生长来形成第二导电层的步骤。
根据本发明的半导体封装件的制造方法,能够提供高成品率的半导体封装件的制造方法。
附图说明
图1为本发明的一个实施方式的半导体封装件的剖面示意图。
图2为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材形成对准标记的工序的图。
图3为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材形成粘接层的工序的图。
图4为示出在本发明的一个实施方式的半导体封装件的制造方法中,对支承基材的背面和侧面进行粗化的工序的图。
图5为示出在本发明的一个实施方式的半导体封装件的制造方法中,去除粘接层的一部分的工序的图。
图6为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材上配置半导体装置的工序的图。
图7为示出在本发明的一个实施方式的半导体封装件的制造方法中,形成树脂绝缘层的工序的图。
图8为示出在本发明的一个实施方式的半导体封装件的制造方法中,在树脂绝缘层上形成导电层的工序的图。
图9为示出在本发明的一个实施方式的半导体封装件的制造方法中,对导电层的表面进行粗化的工序的图。
图10为示出在本发明的一个实施方式的半导体封装件的制造方法中,在树脂绝缘层形成开口部的工序的图。
图11为示出在本发明的一个实施方式的半导体封装件的制造方法中,去除导电层的表面中被粗化的区域并去除开口底部的残渣的工序的图。
图12为示出在本发明的一个实施方式的半导体封装件的制造方法中,利用无电解镀敷法形成导电层的工序的图。
图13为示出在本发明的一个实施方式的半导体封装件的制造方法中,形成感光性光刻胶的工序的图。
图14为示出在本发明的一个实施方式的半导体封装件的制造方法中,利用光刻去除感光性光刻胶的一部分的工序的图。
图15为示出在本发明的一个实施方式的半导体封装件的制造方法中,利用电解镀敷法形成导电层的工序的图。
图16为示出在本发明的一个实施方式的半导体封装件的制造方法中,去除感光性光刻胶的工序的图。
图17为示出在本发明的一个实施方式的半导体封装件的制造方法中,通过去除导电层的一部分来形成布线的工序的图。
图18为示出在本发明的一个实施方式的半导体封装件的制造方法中,形成覆盖布线的树脂绝缘层的工序的图。
图19为示出在本发明的一个实施方式的半导体封装件的制造方法中,在树脂绝缘层形成用于露出布线的开口部的工序的图。
图20为示出在本发明的一个实施方式的半导体封装件的制造方法中,在与露出的布线相对应的位置配置焊料球的工序的图。
图21为示出在本发明的一个实施方式的半导体封装件的制造方法中,将焊料球回流的工序的图。
图22为示出在本发明的一个实施方式的半导体封装件的制造方法中,在树脂绝缘层形成达到支承基材的槽的工序的图。
图23为示出在本发明的一个实施方式的半导体封装件的制造方法中,通过切断支承基材来对半导体封装件进行单片化的工序的图。
图24为本发明的一个实施方式的半导体封装件的剖面示意图。
图25为示出在本发明的一个实施方式的半导体封装件的制造方法中,准备支承基材的工序的图。
图26为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材形上成粘接层的工序的图。
图27为示出在本发明的一个实施方式的半导体封装件的制造方法中,对支承基材的背面和侧面进行粗化的工序的图。
图28为示出在本发明的一个实施方式的半导体封装件的制造方法中,在粘接层形成对准标记的工序的图。
图29为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材上配置半导体装置的工序的图。
(附图标记的说明)
10、20:半导体封装件;100:支承基材;102、114:对准标记;
104、146:粗化区域;110:粘接层;112:开口部;120:半导体装置;
122:外部端子;130:第一树脂绝缘层;132:开口部;140:布线;
142:第一导电层;144:第二导电层;150:第二树脂绝缘层;152:开口部;
160:焊料球;200:镀层;210:光刻胶;220:阻挡剂图案;
230:厚膜区域;240:薄膜区域;250:切口
具体实施方式
以下,参照附图,对本发明的一个实施方式的半导体封装件的结构及其制造方法进行详细说明。以下所示的实施方式只是本发明的实施方式的一个示例,不应局限于这些实施方式来解释本发明。在本实施方式所参照的附图中,存在对同一部分或具有相同功能的部分赋予同一附图标记或类似的附图标记而省略对其的反复说明的情况。为了便于说明,存在附图的尺寸比率与实际的比率不同或结构的一部分从附图中省略的情况。为了便于说明,利用上方或下方的语句来进行说明,但可以配置成例如第一部件与第二部件之间的上下关系与图示相反的结构。以下的说明中基板的第一面和第二面不指基板的特定面,而是用于确定基板的表面(正面)方向或背面方向,换言之是用于确定对于基板的上下方向的名称。
<实施方式1>
参照图1,对本发明的实施方式1的半导体封装件的概要进行详细说明。图1为本发明的一个实施方式的半导体封装件的剖面示意图。
(半导体封装件10的结构)
如图1所示,半导体封装件10具有支承基材100、粘接层110、半导体装置120、第一树脂绝缘层130、布线140、第二树脂绝缘层150及焊料球160。
支承基材100设置有支承基材100的一部分呈凹陷的形状的对准标记102。粘接层110配置于支承基材100的表面(正面)。粘接层110以露出对准标记102的方式而开口。粘接层110的开口比对准标记102的区域更宽阔。对准标记102及其周边的支承基材100的表面通过此开口而露出。半导体装置120配置在粘接层110上。半导体装置120的上部设置有与半导体装置120所包括的电子电路相连接的外部端子122。在图1中示出了粘接层110为单层的结构,但不限于此结构。例如,粘接层110可以为多层。
第一树脂绝缘层130以覆盖半导体装置120的方式配置在支承基材100上。在第一树脂绝缘层130设置有开口部132。开口部132达到外部端子122。换言之,开口部132设置为露出外部端子122的结构。
布线140具有第一导电层142和第二导电层144。第一导电层142配置于第一树脂绝缘层130的上部面。第二导电层144配置在第一导电层142上和开口部132的内部,并与外部端子122相连接。在图1中,例示了如下的结构,即,第一导电层142仅配置于第一树脂绝缘层130的上部面,而完全未配置在开口部132的内部,但不限于此结构。例如第一导电层142的一部分可以配置于开口部132的内部。第一导电层142和第二导电层144的各个可以为图1所示的单层,但第一导电层142和第二导电层的一者或两者也可以为多层。
第二树脂绝缘层150以覆盖布线140的方式配置在第一树脂绝缘层130上。第二树脂绝缘层150设置有开口部152。开口部152达到布线140。换言之,开口部152配置为露出布线140的方式。
焊料球160配置于开口部152的内部和第二树脂绝缘层150的上部面,并与布线140相连接。焊料球160的上部面从第二树脂绝缘层150的上部面向上方突出。焊料球160的突出部具有向上凸起的弯曲形状。焊料球160的弯曲形状在剖视图中可以为圆弧,也可以为抛物线。
(半导体封装件10的各个部件的材料)
对包括在图1所示的半导体封装件10中的各个部件(各个层)的材料进行详细说明。
作为支承基材100,可以使用至少包含一种金属的金属基材。作为金属基材,可以使用不锈钢(SUS)基材、铝(Al)基材、钛(Ti)基材及铜(Cu)等的金属材料。
作为粘接层110,可以使用包含环氧类树脂或丙烯酸类树脂的粘接剂。
作为半导体装置120,可以使用中央处理单元(Central Processing Unit,CPU)、存储器、微机电系统(Micro Electro Mechanical Systems,MEMS)及功率半导体器件(功率器件,power device)等。
作为第一树脂绝缘层130和第二树脂绝缘层150,可以使用聚酰亚胺、环氧树脂、聚酰亚胺树脂、苯并环丁烯树脂、聚酰胺、酚树脂、硅树脂、氟树脂、液晶聚合物、聚酰胺酰亚胺、聚苯并噁唑、氰酸酯树脂、芳族聚酰胺、聚烯烃、聚酯、BT树脂、FR-4、FR-5、聚缩醛、聚对苯二甲酸丁二酯、间规聚苯乙烯、聚苯硫醚、聚醚醚酮、聚醚腈、聚碳酸酯、聚苯醚、聚砜、聚醚砜、聚芳酯、聚醚酰亚胺等。环氧类树脂具有优异的电特性和加工特性,因此优选地,作为第一树脂绝缘层130和第二树脂绝缘层150使用环氧类树脂。
在本实施方式中所使用的第一树脂绝缘层130包括填料。作为填料,可以使用玻璃、滑石、云母、二氧化硅、氧化铝等无机填料。作为填料,也可以使用氟树脂填料等有机填料。但是,第一树脂绝缘层130并不限定为必须为包括填料的树脂。在本实施方式中,第二树脂绝缘层150包括填料,但第二树脂绝缘层150也可以不包括填料。
作为第一导电层142和第二导电层144,可以从铜(Cu)、金(Au)、银(Ag)、铂(Pt)、铑(Rh)、锡(Sn)、铝(Al)、镍(Ni)、钯(Pd)及铬(Cr)等金属或使用这些的合金等中选择。第一导电层142和第二导电层144可以使用相同的材料,也可以使用不同的材料。
作为焊料球160,可以使用由例如在Sn中添加了少量的Ag、Cu、Ni、铋(Bi)或锌(Zn)的锡合金而形成的球状的物体。除了焊料球以外,也可以使用通常的导电颗粒。例如,作为导电颗粒,可以使用在颗粒状的树脂的周边形成有导电膜的结构。除了焊料球以外,也可以使用焊料膏。作为焊料膏,可以使用Sn、Ag、Cu、Ni、Bi、磷(P)、锗(Ge)、铟(In)、锑(Sb)、钴(Co)、铅(Pb)。
(半导体封装件10的制造方法)
利用图2至图23,对本发明的实施方式1的半导体封装件10的制造方法进行说明。在图2至图23中,对于与由图1所示的要素相同的要素赋予相同的附图标记。在以下说明中,对半导体封装件的制造方法进行说明,其中,作为支承基材100使用SUS基材,作为第一树脂绝缘层130使用环氧类树脂,作为第一导电层142及第二导电层144使用Cu,作为焊料球160使用上述Sn合金,来制造半导体封装件。
图2为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材形成对准标记的工序的图。支持基材100具有第一面、与第一面对置的第二面及位于第一面与第二面之间的位置的侧面(侧面部)。利用光刻法及蚀刻来将校准标记102形成于支持基材100的上部面(支持基材100的第二面)。对准标记102的位置及平面形状可以根据目的适当决定。对准标记102设置为具有当利用光学显微镜等从上部面侧观察支承基材100时,能够视觉辨识的程度的高度差即可。
图3为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材形成粘接层的工序的图。在形成有对准标记102的支承基材100的上部面形成粘接层110。作为粘接层110粘贴片状的粘接层。可以利用涂敷法涂覆溶解有粘接层材料的溶液来作为粘接层110。在图3中,对准标记102的凹部为空洞状态,但形成有对准标记102的区域的粘接层110在后续工序中被去除,因此在该工序中,粘接层110可以掩埋对准标记102的凹部。
图4为示出在本发明的一个实施方式的半导体封装件的制造方法中,对支承基材的背面及侧面进行粗化的工序的图。在此,以抑制在后续工序中利用无电解镀敷法形成的镀层的剥离为目的,对支承基材100的背面(支承基材100的第一面)及侧面(侧面部)进行粗化(或粗面化)处理,并在被粗面化的支撑基材100的背面及侧面附着金属。利用含有在被粗化的支承基材100的面上附着的期望的金属离子的化学溶液(蚀刻液)进行湿法蚀刻,来实现对支承基材100的表面的粗化及金属的附着。在图4中,用虚线示出了粗化区域104。
关于支持基材100的粗化及对支持基材100的表面的金属的附着,进行更详细的说明。在作为支持基材100的不锈钢基材的表面形成有钝化膜。为了对不锈钢基材的表面进行粗化,并在被粗化的表面析出金属,利用包含要附着于支持基材100的表面的期望的金属的离子的蚀刻液来进行湿法蚀刻。具体地,优选使用在包含三氯化铁(FeCl3)等的铁离子的强酸性溶液含中有比不锈钢基材所包含的铁(Fe)、镍(Ni)、铬(Cr)等的离子化倾向小的其他金属的离子的蚀刻液。由于不锈钢基材的蚀刻局部地推进,因此不锈钢基材表面被不均匀地蚀刻,蚀刻后的不锈钢基材表面的凹凸变大。另外,不锈钢基材所包含的铁等的金属与蚀刻液所包含的金属之间的离子化倾向不同,从而使蚀刻液所包含的金属能够析出于不锈钢基材的表面。离子化倾向比铁小的金属为例如铜(Cu)、镍(Ni)、锡(Sn)等。作为蚀刻液所包含的金属,可以考虑到与利用后述的无电解镀敷法来形成的镀层之间的紧贴性,而适当设定。例如,当镀层包含铜(Cu)时,作为蚀刻液所包含的离子化倾向小的金属的离子,优选为铜离子。当使用包含铜离子的蚀刻液时,不锈钢基材表面被蚀刻并被粗面化,同时不锈钢基材表面的铁(Fe)、镍(Ni)及铬(Cr)中的任意一种被离子化,而取而代之地,铜(Cu)析出于不锈钢基材表面。另外,当铜(Cu)附着于不锈钢基材表面时,也可能存在如下情况,即,离子化了的不锈钢基材所包含的铁(Fe)、镍(Ni)、铬(Cr)等、或蚀刻液所包含的除铜(Cu)之外的其他金属离子与蚀刻液所包含的阴离子相结合,作为金属化合物而与铜(Cu)一起析出于不锈钢基材表面。
可通过利用如上所述的蚀刻液来对不锈钢基材进行表面处理,来利用单一工序对不锈钢基材的背面及侧面进行粗化,并且使金属粒子附着于被粗化的面。优选地,蚀刻后的不锈钢基材的表面粗糙度(Ra)为0.1μm~0.2μm。可通过在不锈钢基材的被粗化的面附着金属,来提高与镀层之间的紧贴性,防止镀层的剥离。可通过调节蚀刻液所包含的金属的离子的浓度,来适当调节附着于不锈钢基材的被粗化的面的该金属的附着量。
在此,以作为支持基材100使用不锈钢基材为前提,但在支持基材100不是不锈钢基材的情况下,只要使用包含具有比支持基材100所包含的至少一种金属的离子化倾向小的离子化倾向的、金属的离子的蚀刻液,就能够在支持基材100的表面析出蚀刻液所包含的金属。
在此,例示了粘贴粘接层110之后对不锈钢基材进行粗化的制造方法,但不限于该制造方法。例如,可以在粘贴粘接层110之前,或在形成对准标记102之前进行粗化。
图5为示出在本发明的一个实施方式的半导体封装件的制造方法中,去除粘接层的一部分的工序的图。为了更加准确地读取对准标记102,去除对准标记102的上方的粘接层110来形成开口部112。粘接层110的去除可利用基于激光照射的升华或烧蚀(ablation)来进行。开口部112可以利用光刻及蚀刻来形成。为了可靠地露出对准标记102,开口部112形成为比对准标记102宽的区域。即,开口部112露出支承基材100的上部面(形成有对准标记102的面)。换言之,开口部112形成为在俯视图中开口部112的外缘包围对准标记102的外缘。
图6为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材上配置半导体装置的工序的图。如上所述基于露出的对准标记102来进行位置对准,并经由粘接层110将在上部面具有外部端子122的半导体装置120配置于支承基材100。对准标记102的读取可以利用例如光学显微镜、CCD相机、电子显微镜等的方法来进行。通过这些方法,能够以高定位精度来实现半导体装置120的安装。
图7为示出在本发明的一个实施方式的半导体封装件的制造方法中,形成树脂绝缘层的工序的图。第一树脂绝缘层130可通过粘贴绝缘性的片状膜来形成。具体而言,在将该片状膜粘贴于安装有半导体装置120的支承基材100之后,利用加热处理使片状膜熔化。通过加压处理将熔化的片状膜掩埋于对准标记102的凹部。通过该加热处理以及加压处理从所述片状膜获得图7所示的第一树脂绝缘层130。第一树脂绝缘层130的膜厚设定为第一树脂绝缘层130覆盖半导体装置120的程度。即,第一树脂绝缘层130的膜厚大于半导体装置120的厚度(高度)。第一树脂绝缘层130可缓和由半导体装置120、粘接层110等形成的高度差(平坦化),因此也被称作平坦化膜。
第一树脂绝缘层130防止半导体装置120以及外部端子122与布线140之间的导通。即,在半导体装置120以及外部端子122与布线140之间设置有间隙。若第一树脂绝缘层130配置于半导体装置120和外部端子122的至少上部面及侧面,则第一树脂绝缘层130的膜厚可以小于半导体装置120的厚度。在图7的说明中,例示出通过片状膜的粘贴来形成第一树脂绝缘层130的制造方法,但不限于此方法。例如可以通过旋涂法、浸渍法、喷墨法、蒸镀法等各种方法来形成第一树脂绝缘层130。
图8为示出在本发明的一个实施方式的半导体封装件的制造方法中,在树脂绝缘层上形成导电层的工序的图。在第一树脂绝缘层130的上部面粘贴具有导电性的片状膜。该导电性膜为第一导电层142的一部分。在此,例示了通过膜的粘贴来形成第一导电层142的制造方法,但不限于此方法。例如第一导电层142可以利用镀敷法或物理气相沉积(Physical Vapor Deposition,PVD)法来形成。作为PVD法,可以使用溅射法、真空蒸镀法、电子束蒸镀法、分子束外延法等。可以通过涂敷溶解有具有导电性的树脂材料的溶液,来形成第一导电层142。
图9为示出在本发明的一个实施方式的半导体封装件的制造方法中,对导电层的表面进行粗化的工序的图。如图9所示,对形成在第一树脂绝缘层130上的第一导电层142的表面进行粗化。对于第一导电层142表面的粗化,可以通过使用三氯化铁溶液的蚀刻来进行。在图9中,用虚线示出粗化区域146。
图10为示出在本发明的一个实施方式的半导体封装件的制造方法中,在树脂绝缘层形成开口部的工序的图。如图10所示,在与外部端子122相对应的位置,用激光照射第一导电层142表面的粗化区域146,来形成露出外部端子122的开口部132。在开口部132的形成中,可以一并处理第一导电层142和第一树脂绝缘层130。作为用于形成开口部132的激光,可以使用CO2激光。关于CO2激光,可以根据开口部132的大小来调整光斑直径以及能量大小,并进行多次脉冲照射。可通过在第一导电层142的表面形成粗化区域146,来使第一导电层142高效地吸收所照射的激光束的能量。激光束被照射到外部端子122的内侧。即,以不使外部端子122的图案脱落的方式来照射激光束。当需要加工半导体装置120的一部分时,也可以以有意使激光束的一部分露出于外部端子122的外侧的方式照射。
在图10中,例示出被开口的第一导电层142的侧壁与第一树脂绝缘层130的侧壁相连接的结构,但是不限于此结构。例如,在被激光照射而开口的情况下,存在与第一导电层142相比,第一树脂绝缘层130的一侧更向支承基材100的平面方向(开口直径变宽的方向)大幅后退的情况。即,可以是第一导电层142的端部比第一树脂绝缘层130的端部更向开口部132的内侧方向突出的结构。换言之,可以是第一导电层142突出的檐形状。或者换言之,当形成开口部132时,第一导电层142的一部分的下部面可以露出于开口部132的内部。此时,突出的第一导电层142可以呈在开口部132的内部向外部端子122的方向弯曲的形状。
图11为示出在本发明的一个实施方式的半导体封装件的制造方法中,去除导电层的表面的被粗化的区域,并去除开口底部的残渣的工序的图。首先,在形成开口部132之后,去除第一导电层142表面的粗化区域146。可以通过酸处理来去除粗化区域146。去除粗化区域146之后,接着去除开口部132的底部的残渣(胶渣,smear)。通过两个步骤的工序来去除残渣(除胶渣)。
对去除开口部132的底部的残渣的方法进行详细说明。首先,对开口部132的底部进行等离子体处理。作为等离子体处理,可以利用包含氟(CF4)气及氧(O2)气的等离子体处理。通过等离子体处理,主要去除在形成开口部132时未被去除的第一树脂绝缘层130。此时,可以去除在形成开口部132时产生的第一树脂绝缘层130的变质层。例如,在利用激光照射来形成开口部132的情况下,存在因激光的能量而变质的第一树脂绝缘层130残留在开口部132的底部的情况。可通过进行如上所述的等离子体处理,来有效地去除所述变质层。
在所述等离子体处理之后,接着进行化学溶液处理。作为化学溶液处理,可以使用高锰酸钠或高锰酸钾。利用化学溶液处理,能够去除未被所述等离子体处理去除的残渣。例如,能够去除包含在第一树脂绝缘层130且在所述等离子体处理中未被去除的填料。高锰酸钠或高锰酸钾是具有用于蚀刻残渣的作用的蚀刻液。可以在利用所述蚀刻液来进行处理之前,使用使第一树脂绝缘层130溶胀(swelling)的溶胀液。可以在利用所述蚀刻液进行处理之后,使用中和蚀刻液的中和液。
通过使用溶胀液而扩大树脂环,因此液体的润湿性提高。由此,能够抑制出现未被蚀刻的区域的情况。通过使用中和液,能够高效地去除蚀刻液,因此能够抑制不期望的蚀刻处理的进行。例如,在蚀刻液使用碱性溶液的情况下,由于利用水洗处理很难去除碱性溶液,因此存在不期望的蚀刻处理不断进行的情况。在这种情况下,在蚀刻处理之后,若利用中和液,则能抑制不期望的蚀刻处理的进行。
作为溶胀液,可以使用二甘醇单丁基醚、乙二醇等有机溶剂。作为中和液,可以使用羟胺硫酸盐等的硫酸类溶液。
例如,在第一树脂绝缘层130使用无机材料的填料的情况下,存在如下情况,即,填料未被等离子体处理去除,而成为残渣。即使在这种情况下,也可通过在等离子体处理之后进行化学溶液处理,来去除由填料引起的残渣。
图12为示出在本发明的一个实施方式的半导体封装件的制造方法中,利用无电解镀敷法形成导电层的工序的图。利用无电解镀敷法,形成与在所述除胶渣工序之后露出的外部端子122相连接的镀层200(导电体)。作为无电解镀敷法,可以使用无电解铜镀敷方法。例如,将钯(Pd)胶体吸附于树脂并浸渍于包含铜(Cu)的化学溶液中,并通过使Pd与Cu置换来析出Cu。去除粗化区域146之后,利用无电解镀敷法来形成镀层200,由此能够提高镀层200相对于第一导电层142的紧贴性。在支持基材100的背面及侧面,利用附着在被粗面化的表面的铜(Cu)等的金属粒子,可以提高支持基材100与镀层200之间的紧贴性,可以防止镀层200的剥离。
图13为示出在本发明的一个实施方式的半导体封装件的制造方法中,形成感光性光刻胶的工序的图。如图13所示,在镀层200上形成感光性的光刻胶210。光刻胶通过旋涂法等的涂敷法来形成。在形成光刻胶之前,可以进行提高镀层200与光刻胶210之间的紧贴性的处理(HMDS处理等的疏水化表面处理)。光刻胶210可以使用利用显影液难以蚀刻被感光的区域的负型,相反,也可以使用利用显影液来蚀刻被感光的区域的正型。
图14为示出在本发明的一个实施方式的半导体封装件的制造方法中,利用光刻去除感光性光刻胶的一部分的工序的图。如图14所示,通过对涂敷的光刻胶210进行曝光及显影,来去除形成图1所示的布线140的区域的光刻胶210,从而形成阻挡剂图案220。此外,在进行形成阻挡剂图案220的曝光时,利用形成于支承基材100的对准标记102来进行位置对准。
图15为示出在本发明的一个实施方式的半导体封装件的制造方法中,利用电解镀敷法来形成导电层的工序的图。在形成阻挡剂图案220之后,对利用无电解镀敷法形成的镀层200通电,来进行电解镀敷法,从而使从阻挡剂图案220露出的镀层200进一步生长而厚膜化,以形成第二导电层144。阻挡剂图案220之下的第一导电层142及镀层200因对整体的蚀刻而被去除,因此厚膜化了的第二导电层144的膜也变薄。因此,考虑到所述膜的变薄量来调整第二导电层144的要厚膜化的量。
图16为示出在本发明的一个实施方式的半导体封装件的制造方法中,去除感光性光刻胶的工序的图。如图16所示,在通过将镀层200厚膜化而形成第二导电层144之后,利用有机溶剂来去除构成阻挡剂图案220的光刻胶。在去除光刻胶时,可以代替有机溶剂地而使用基于氧等离子体的灰化。可通过去除光刻胶,来获得形成有第二导电层144的厚膜区域230及仅形成有镀层200的薄膜区域240。此外,在厚膜区域230中,在镀层200上利用电解镀敷法形成有厚膜化了的镀层,因此,严格地说,第二导电层144形成为双层,但在此处不区分两层来图示。
图17为示出在本发明的一个实施方式的半导体封装件的制造方法中,去除导电层的一部分来形成布线的工序的图。如图17所示,通过去除(蚀刻)被阻挡剂图案220覆盖而未厚膜化的区域的镀层200及第一导电层142,来将各个布线140电隔离。通过镀层200及第一导电层142的蚀刻,厚膜区域230的第二导电层144的表面也被蚀刻并薄膜化,因此优选地,在考虑到该薄膜化的影响下设定第二导电层144的膜厚。作为该工序的蚀刻,可以使用湿法刻蚀或干法蚀刻。在图17中,例示了形成一层的布线140的制造方法,但不限于此方法,可以使绝缘层及导电层层叠在布线140的上方,来形成层叠有多个布线层的多层布线。此时,在每次形成布线层时形成新的对准标记,从而用于形成上层的布线层时的位置对准。
图18为示出在本发明的一个实施方式的半导体封装件的制造方法中,形成覆盖布线的树脂绝缘层的工序的图。第二树脂绝缘层150与第一树脂绝缘层130同样地,可通过粘贴绝缘性的片状膜,并进行加热/加压处理来形成。第二树脂绝缘层150的膜厚被设定为第二树脂绝缘层150覆盖布线140。即,第二树脂绝缘层150的膜厚大于布线140的厚度。第二树脂绝缘层150缓和由布线140等而形成的高度差(平坦化),因而也称作平坦化膜。
第二树脂绝缘层150防止布线140与焊料球160导通。即,在布线140与焊料球160之间设有间隙。若第二树脂绝缘层150配置于布线140的至少上部面及侧面,则第二树脂绝缘层150的膜厚可以比布线140的厚度薄。在图18的说明中,例示了通过粘贴片状膜来形成第二树脂绝缘层150的制造方法,但不限于此方法。例如可以利用旋涂法、浸渍法、喷墨法、蒸镀法等各种方法来形成第二树脂绝缘层150。
图19为示出在本发明的一个实施方式的半导体封装件的制造方法中,在树脂绝缘层形成露出布线的开口部的工序的图。如图19所示,在第二树脂绝缘层150形成露出布线140的开口部152。开口部152可以通过光刻法及蚀刻来形成。在作为第二树脂绝缘层150使用感光性树脂的情况下,开口部152可以通过曝光及显影来形成。也可以对开口部152实施对第一树脂绝缘层130的开口部132实施的除胶渣处理。可通过基于以与形成布线140相同的工序形成的对准标记进行位置对准,来形成开口部152。
图20为示出在本发明的一个实施方式的半导体封装件的制造方法中,在与露出的布线相对应的位置配置焊料球的工序的图。如图20所示,针对开口部152配置焊料球160。在图20中,例示了在一个开口部152配置一个焊料球160的制造方法,但不限于此方法。例如,可以针对一个开口部152配置多个焊料球160。在图20中,例示了在将焊料球160配置于开口部152的步骤中,焊料球160与布线140相接触的制造方法,但不限于此方法。例如,在图20所示的步骤中,焊料球160也可以不与布线140相接触。可通过基于以与形成布线140相同的工序形成的对准标记进行位置对准,来配置焊料球160。
图21为示出在本发明的一个实施方式的半导体封装件的制造方法中,将焊料球回流(reflow)的工序的图。通过在图20所示的状态下进行热处理,来将焊料球160回流。回流是指使固体的对象物的至少一部分变为液状,来赋予对象物流动性,由此使对象物流入凹部的内部。可通过回流焊料球160,在开口部152的内部中露出的布线140的上部面的整个区域中使焊料球160与布线140相接触。
图22为示出在本发明的一个实施方式的半导体封装件的制造方法中,在树脂绝缘层形成达到支承基材的槽的工序的图。在此,利用划片刀(例如金刚石制圆形旋转刀)在粘接层110、第一树脂绝缘层130及第二树脂绝缘层150划出切口250。切口250是通过使划片刀高速旋转,并用纯水进行冷却/切屑的冲洗的同时进行切断而形成的。在图22中,切口250形成于粘接层110、第一树脂绝缘层130及第二树脂绝缘层150。但也可以划片到达支承基材100来形成切口250。即,可通过划片来在支承基材100的上部面附近形成凹部。相反,也可以以残留粘接层110的一部分、或粘接层110及第一树脂绝缘层130的一部分的方式进行划片。
图23为示出在本发明的一个实施方式的半导体封装件的制造方法中,通过切断支承基材来对半导体封装件进行单片化的工序的图。如图23所示,通过从支承基材100的背面侧(与配置有半导体装置120的一侧的相反一侧)开始激光照射,来对半导体封装件进行单片化。作为向支承基材100照射的激光,可以使用CO2激光。可通过基于支承基材100的对准标记102进行位置对准,来进行激光照射。激光可照射在比俯视图中的切口250窄的区域。
在此,示出了从支承基材100的背面侧进行激光照射的制造方法,但不限于此方法。例如,可以从支承基材100的表面侧(正面侧)经由切口250,来从支承基材100的表面侧(正面侧)进行激光照射。在上述说明中,示出了向俯视图中比形成有切口250的区域小的区域照射激光的制造方法,但不限于此方法。例如,可以向俯视图中与形成有切口250的区域相同的区域照射激光,也可以在更宽的区域照射激光。
在此,使用采用了金属基材的支承基材100,因此若一并加工粘接层110、第一树脂绝缘层130、第二树脂绝缘层150及支承基材100,则划片刀的磨耗会变大,划片刀的使用寿命会变短。另外,若利用划片刀对金属基材进行机械加工,则在加工端部中的角形状会产生尖锐的“毛刺”,在装卸时存在作业人员受伤的危险。但是,通过对支承基材100进行激光加工,能够抑制划片刀的磨耗,可使支承基材100的加工端部的形状光滑。因此,尤其在作为支承基材100使用金属基材的情况下,优选地,如上所述,利用划片刀来加工支承基材100上的结构物,利用激光加工支承基材100。
如上所述,根据实施方式1的半导体封装件的制造方法,对支持基材100的背面及侧面进行粗化,并使金属粒子附着于被粗面化的表面,由此能够提高利用无电解镀敷法形成的镀层200与支持基材100之间的紧贴性,能够防止镀层200的剥离。由此,能够提高半导体封装件的成品率。
<实施方式2>
参照图24,对本发明的实施方式2的半导体封装件的概要进行详细说明。图24为本发明的一个实施方式的半导体封装件的剖面示意图。
(半导体封装件20的结构)
实施方式2的半导体封装件20类似于实施方式1的半导体封装件10,但通过设置于粘接层110的开口部来实现对准标记114,在这一点上不同于半导体封装件10。在半导体封装件20中,在支承基材100未形成凹部。但是,也可以与半导体封装件10同样地,在半导体封装件20的支承基材100设置凹部,形成辅助对准标记。由于半导体封装件20的其他部件与半导体封装件10同样,因此在此省略详细说明。
(半导体封装件20的制造方法)
利用图25至图29,对本发明的实施方式2的半导体封装件20的制造方法进行说明。在图25至图29中,对于与图24所示的要素相同的要素赋予相同的附图标记。与半导体封装件10同样地,对作为支承基材100使用不锈钢基材,作为第一树脂绝缘层130使用环氧类树脂,作为第一导电层142和第二导电层144使用Cu,作为焊料球160使用上述Sn合金,来制造半导体封装件的制造方法进行说明。
图25为示出在本发明的一个实施方式的半导体封装件的制造方法中,准备支承基材的工序的图。在半导体封装件20的制造方法中,不在支承基材100形成对准标记。但是可以根据需要,利用与图2所示的制造方法同样的方法来形成对准标记。
图26为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材形成粘接层的工序的图。如图26所示,在支承基材100的上部面形成粘接层110。作为粘接层110粘贴片状粘接层。也可以利用涂敷法涂覆处于溶解于溶剂的状态的粘接层材料来形成粘接层110。
图27为示出在本发明的一个实施方式的半导体封装件的制造方法中,对支承基材的背面和侧面进行粗化的工序的图。以抑制在后续工序中利用无电解镀敷法形成的镀层的剥离为目的,将支承基材100的背面及侧面粗化(或粗面化),并在被粗化的表面附着金属颗粒。可以使用含有在进行附着所需的金属的离子的化学溶液(蚀刻液)来实现支持基材100的粗化及对粗化面的金属颗粒的附着。在图27中,用虚线示出粗化区域104。
在此,例示了在粘贴粘接层110之后进行SUS基材的粗化的制造方法,但不限于此制造方法。例如,可以在粘贴粘接层110之前进行粗化。
图28为示出在本发明的一个实施方式的半导体封装件的制造方法中,在粘接层10形成对准标记的工序的图。可以利用光刻及蚀刻来形成对准标记114。对准标记114的位置及平面形状可以根据目的适当决定。对准标记114设置为具有当利用光学显微镜等从上部面侧观察支承基材100时,能够视觉辨识的程度的高度差即可。即,图28的对准标记114是将粘接层110开口,但对准标记114可以为形成于粘接层110的凹部。在该工序中,可以在粘接层110加工与对准标记114相独立的开口部或凹部。可以利用基于激光照射的升华或烧蚀来进行独立的开口部或凹部的加工。或者,可以利用光刻法及蚀刻来进行独立的开口部或凹部的加工。
图29为示出在本发明的一个实施方式的半导体封装件的制造方法中,在支承基材上配置半导体装置的工序的图。基于如上所述地形成于粘接层110的对准标记114进行位置对准,并将上部面设置有外部端子122的半导体装置120经由粘接层110配置于支承基材100。可以利用例如,光学显微镜、CCD相机及电子显微镜等的方法来读取对准标记114。通过这些方法,能够以高对准精度来实现半导体装置120的安装。
以下的工序可以利用与图7至图23同样的制造方法来形成半导体封装件20。因此,省略对后续工序的说明。
如上所述,根据实施方式2的半导体封装件的制造方法,通过对支持基材100的背面及侧面进行粗化,并使金属颗粒附着于被粗面化的表面,能够提高利用无电解镀敷法形成的镀层200与支持基材100之间的紧贴性,防止镀层200的剥离。因此,能够提高半导体封装件的成品率。
此外,本发明不限于所述实施方式,可以在不脱离要旨的范围内适当进行变更。
Claims (17)
1.一种半导体封装件的制造方法,包括如下步骤:
对包含至少一种金属且具有第一面和与所述第一面对置的第二面的基材的所述第一面及位于所述第一面与所述第二面之间的侧面部进行蚀刻,且在所述第一面及所述侧面部附着与所述金属不同的其他金属;
在所述基材的所述第二面配置包括外部端子的半导体装置,使得所述外部端子不与所述第二面对置;
形成用于覆盖所述半导体装置的树脂绝缘层;
在所述树脂绝缘层上形成第一导电层;
在所述第一导电层和所述树脂绝缘层形成用于使所述半导体装置的所述外部端子露出的开口部;以及
在所述基材的所述第一面和所述侧面部、所述第一导电层上以及所述开口部内形成镀层。
2.根据权利要求1所述的半导体封装件的制造方法,其中,所述基材为不锈钢基材。
3.根据权利要求1所述的半导体封装件的制造方法,其中,所述蚀刻为使用包含所述其他金属的离子的蚀刻液的湿法蚀刻。
4.根据权利要求1所述的半导体封装件的制造方法,其中,所述其他金属的离子化倾向小于所述基材所包含的至少一种所述金属的离子化倾向。
5.根据权利要求1所述的半导体封装件的制造方法,其中,利用无电解镀敷法来形成所述镀层。
6.根据权利要求1所述的半导体封装件的制造方法,其中,所述镀层包含与所述其他金属相同的金属。
7.根据权利要求1所述的半导体封装件的制造方法,其中,还包括使所述镀层生长来形成第二导电层的步骤。
8.根据权利要求1所述的半导体封装件的制造方法,其中,所述树脂绝缘层具有填料。
9.根据权利要求8所述的半导体封装件的制造方法,其中,所述填料包含无机材料。
10.根据权利要求1所述的半导体封装件的制造方法,其中,还包括利用激光对所述第一导电层的表面进行粗面化处理的步骤。
11.根据权利要求10所述的半导体封装件的制造方法,其中,关于所述开口部的形成,是通过以激光照射所述第一导电层和所述树脂绝缘层而一并地形成的。
12.根据权利要求2所述的半导体封装件的制造方法,其中,所述蚀刻为使用包含所述其他金属的离子的蚀刻液的湿法蚀刻。
13.根据权利要求12所述的半导体封装件的制造方法,其中,所述其他金属的离子化倾向小于所述基材所包含的至少一种金属的离子化倾向。
14.根据权利要求2所述的半导体封装件的制造方法,其中,所述镀层包含与所述其他金属相同的金属。
15.根据权利要求12所述的半导体封装件的制造方法,其中,所述镀层包含与所述其他金属相同的金属。
16.根据权利要求3所述的半导体封装件的制造方法,其中,所述其他金属的离子化倾向小于所述基材所包含的至少一种金属的离子化倾向。
17.根据权利要求16所述的半导体封装件的制造方法,其中,所述镀层包含与所述其他金属相同的金属。
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CN114883290A (zh) | 2022-08-09 |
JP2017224787A (ja) | 2017-12-21 |
JP6691835B2 (ja) | 2020-05-13 |
TW201810450A (zh) | 2018-03-16 |
US10224256B2 (en) | 2019-03-05 |
US20170365534A1 (en) | 2017-12-21 |
KR20170142913A (ko) | 2017-12-28 |
CN107527825A (zh) | 2017-12-29 |
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