TWI732855B - 樹脂組成物 - Google Patents

樹脂組成物 Download PDF

Info

Publication number
TWI732855B
TWI732855B TW106113566A TW106113566A TWI732855B TW I732855 B TWI732855 B TW I732855B TW 106113566 A TW106113566 A TW 106113566A TW 106113566 A TW106113566 A TW 106113566A TW I732855 B TWI732855 B TW I732855B
Authority
TW
Taiwan
Prior art keywords
film
resin composition
resin
group
general formula
Prior art date
Application number
TW106113566A
Other languages
English (en)
Chinese (zh)
Other versions
TW201809076A (zh
Inventor
橋本啓華
莊司優
奧田良治
Original Assignee
日商東麗股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東麗股份有限公司 filed Critical 日商東麗股份有限公司
Publication of TW201809076A publication Critical patent/TW201809076A/zh
Application granted granted Critical
Publication of TWI732855B publication Critical patent/TWI732855B/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/14—Polyamide-imides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/07—Aldehydes; Ketones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Formation Of Insulating Films (AREA)
TW106113566A 2016-04-25 2017-04-24 樹脂組成物 TWI732855B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-086838 2016-04-25
JP2016086838 2016-04-25
JP2016-182588 2016-09-20
JP2016182588 2016-09-20

Publications (2)

Publication Number Publication Date
TW201809076A TW201809076A (zh) 2018-03-16
TWI732855B true TWI732855B (zh) 2021-07-11

Family

ID=60161502

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106113566A TWI732855B (zh) 2016-04-25 2017-04-24 樹脂組成物

Country Status (5)

Country Link
JP (1) JP7003659B2 (ja)
KR (1) KR102277707B1 (ja)
CN (1) CN108779251B (ja)
TW (1) TWI732855B (ja)
WO (1) WO2017188153A1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI662063B (zh) * 2018-02-02 2019-06-11 新應材股份有限公司 感光性聚醯亞胺組成物及其所製成之光阻膜
JP7180459B2 (ja) * 2018-03-26 2022-11-30 東レ株式会社 アルカリ可溶性樹脂溶液の製造方法
JP7547727B2 (ja) * 2018-08-01 2024-09-10 東レ株式会社 樹脂組成物、樹脂シート、硬化膜、硬化膜の製造方法、半導体装置および表示装置
KR20220092851A (ko) * 2019-10-29 2022-07-04 도레이 카부시키가이샤 수지 조성물, 수지 시트, 경화막, 경화막의 제조 방법, 반도체 장치, 유기 el 표시 장치 및 표시 장치
CN111308795B (zh) * 2020-03-13 2021-02-26 Tcl华星光电技术有限公司 隔垫物及制作方法、显示装置
JP2022029427A (ja) 2020-08-04 2022-02-17 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP7431696B2 (ja) 2020-08-04 2024-02-15 信越化学工業株式会社 ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、ポジ型感光性ドライフィルムの製造方法、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP7335217B2 (ja) 2020-09-24 2023-08-29 信越化学工業株式会社 感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
CN115232017B (zh) * 2021-03-15 2024-06-18 华为技术有限公司 一种化合物、一种树脂及其制备方法和应用
JP2022151614A (ja) 2021-03-23 2022-10-07 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP7495897B2 (ja) 2021-03-23 2024-06-05 信越化学工業株式会社 ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、ポジ型感光性ドライフィルムの製造方法、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
WO2023042608A1 (ja) * 2021-09-15 2023-03-23 東レ株式会社 ポリイミド樹脂、感光性樹脂組成物、硬化物、有機ｅｌディスプレイ、電子部品、および半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200903148A (en) * 2007-03-12 2009-01-16 Hitachi Chem Dupont Microsys Photosensitive resin composition, method of forming patterned cured film by using the photosensitive resin composition, and electronic component
JP2010026359A (ja) * 2008-07-23 2010-02-04 Toray Ind Inc ポジ型感光性樹脂組成物
TW201035241A (en) * 2009-01-29 2010-10-01 Toray Industries Resin composition and display device using the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11282155A (ja) * 1998-03-27 1999-10-15 Hitachi Chem Co Ltd 感光性樹脂組成物及びこれを用いたソルダーレジストの製造法
JP2002012761A (ja) * 2000-04-28 2002-01-15 Toray Ind Inc 耐熱性樹脂組成物
US6876017B2 (en) * 2003-02-08 2005-04-05 Intel Corporation Polymer sacrificial light absorbing structure and method
JP5211438B2 (ja) 2005-06-09 2013-06-12 東レ株式会社 樹脂組成物およびそれを用いた表示装置
JP4736863B2 (ja) 2006-03-03 2011-07-27 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性ポリアミドイミド樹脂組成物、パターンの製造方法及び電子部品
JP2010229210A (ja) * 2009-03-26 2010-10-14 Toray Ind Inc 樹脂組成物
JP5742376B2 (ja) * 2011-03-30 2015-07-01 東レ株式会社 ポジ型感光性樹脂組成物
JP5831092B2 (ja) 2011-09-27 2015-12-09 東レ株式会社 ポジ型感光性樹脂組成物
US20170293224A1 (en) * 2014-09-26 2017-10-12 Toray Industries, Inc. Organic el display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200903148A (en) * 2007-03-12 2009-01-16 Hitachi Chem Dupont Microsys Photosensitive resin composition, method of forming patterned cured film by using the photosensitive resin composition, and electronic component
JP2010026359A (ja) * 2008-07-23 2010-02-04 Toray Ind Inc ポジ型感光性樹脂組成物
TW201035241A (en) * 2009-01-29 2010-10-01 Toray Industries Resin composition and display device using the same

Also Published As

Publication number Publication date
KR20180136439A (ko) 2018-12-24
JP7003659B2 (ja) 2022-01-20
CN108779251B (zh) 2021-05-18
CN108779251A (zh) 2018-11-09
WO2017188153A1 (ja) 2017-11-02
JPWO2017188153A1 (ja) 2019-02-28
TW201809076A (zh) 2018-03-16
KR102277707B1 (ko) 2021-07-16

Similar Documents

Publication Publication Date Title
TWI732855B (zh) 樹脂組成物
TWI670298B (zh) 樹脂、感光性樹脂組成物、耐熱性樹脂被膜之製造方法、層間絕緣膜、多層配線結構用層間絕緣膜、表面保護膜、電子零件、及有機電場發光元件的絕緣層
TWI720018B (zh) 樹脂及感光性樹脂組成物、以及樹脂之製造方法
JP4735778B1 (ja) ポジ型感光性樹脂組成物
CN109642028B (zh) 树脂组合物
CN109563342A (zh) 树脂组合物、固化膜、半导体器件及它们的制造方法
TWI820172B (zh) 樹脂組成物、樹脂薄片、硬化膜、硬化膜之製造方法、半導體裝置及顯示裝置
US20180039174A1 (en) Photosensitive resin composition
WO2016152794A1 (ja) 感光性樹脂組成物
JP6939553B2 (ja) 樹脂組成物
WO2017081922A1 (ja) 半導体装置およびその製造方法
JP2009258634A (ja) ポジ型感光性樹脂組成物
TWI714703B (zh) 硬化膜及其製造方法
JP7131133B2 (ja) 樹脂組成物
TWI692490B (zh) 硬化膜及其製造方法
JP2017194604A (ja) ポジ型感光性樹脂組成物
JPWO2017038828A1 (ja) ポジ型感光性樹脂組成物、その樹脂組成物により形成された未硬化の樹脂パターン、硬化樹脂パターン、およびそれを用いた半導体装置とその製造方法
JP2022034533A (ja) 感光性樹脂組成物、硬化膜および有機ｅｌ表示装置
KR20230104869A (ko) 수지 조성물, 경화막, 절연막 또는 보호막, 안테나 소자, 그리고 전자 부품, 표시 장치 또는 반도체 장치 및 그의 제조 방법
TW202302710A (zh) 樹脂組成物、硬化物、硬化物的製造方法、電子零件、顯示裝置及半導體裝置