KR102277707B1 - 수지 조성물 - Google Patents

수지 조성물 Download PDF

Info

Publication number
KR102277707B1
KR102277707B1 KR1020187026652A KR20187026652A KR102277707B1 KR 102277707 B1 KR102277707 B1 KR 102277707B1 KR 1020187026652 A KR1020187026652 A KR 1020187026652A KR 20187026652 A KR20187026652 A KR 20187026652A KR 102277707 B1 KR102277707 B1 KR 102277707B1
Authority
KR
South Korea
Prior art keywords
group
resin composition
film
resin
acid
Prior art date
Application number
KR1020187026652A
Other languages
English (en)
Korean (ko)
Other versions
KR20180136439A (ko
Inventor
게이카 하시모토
유 쇼지
료지 오쿠다
Original Assignee
도레이 카부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도레이 카부시키가이샤 filed Critical 도레이 카부시키가이샤
Publication of KR20180136439A publication Critical patent/KR20180136439A/ko
Application granted granted Critical
Publication of KR102277707B1 publication Critical patent/KR102277707B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/14—Polyamide-imides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/07—Aldehydes; Ketones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Formation Of Insulating Films (AREA)
KR1020187026652A 2016-04-25 2017-04-21 수지 조성물 KR102277707B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2016-086838 2016-04-25
JP2016086838 2016-04-25
JP2016182588 2016-09-20
JPJP-P-2016-182588 2016-09-20
PCT/JP2017/016054 WO2017188153A1 (ja) 2016-04-25 2017-04-21 樹脂組成物

Publications (2)

Publication Number Publication Date
KR20180136439A KR20180136439A (ko) 2018-12-24
KR102277707B1 true KR102277707B1 (ko) 2021-07-16

Family

ID=60161502

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187026652A KR102277707B1 (ko) 2016-04-25 2017-04-21 수지 조성물

Country Status (5)

Country Link
JP (1) JP7003659B2 (ja)
KR (1) KR102277707B1 (ja)
CN (1) CN108779251B (ja)
TW (1) TWI732855B (ja)
WO (1) WO2017188153A1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI662063B (zh) * 2018-02-02 2019-06-11 新應材股份有限公司 感光性聚醯亞胺組成物及其所製成之光阻膜
JP7180459B2 (ja) * 2018-03-26 2022-11-30 東レ株式会社 アルカリ可溶性樹脂溶液の製造方法
WO2020026937A1 (ja) * 2018-08-01 2020-02-06 東レ株式会社 樹脂組成物、樹脂シート、硬化膜、硬化膜の製造方法、半導体装置および表示装置
CN114502659A (zh) * 2019-10-29 2022-05-13 东丽株式会社 树脂组合物、树脂片材、固化膜、固化膜的制造方法、半导体装置、有机el显示装置及显示装置
CN111308795B (zh) 2020-03-13 2021-02-26 Tcl华星光电技术有限公司 隔垫物及制作方法、显示装置
JP2022029427A (ja) 2020-08-04 2022-02-17 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP7431696B2 (ja) 2020-08-04 2024-02-15 信越化学工業株式会社 ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、ポジ型感光性ドライフィルムの製造方法、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP7335217B2 (ja) 2020-09-24 2023-08-29 信越化学工業株式会社 感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
CN115232017A (zh) * 2021-03-15 2022-10-25 华为技术有限公司 一种化合物、一种树脂及其制备方法和应用
US20220315676A1 (en) 2021-03-23 2022-10-06 Shin-Etsu Chemical Co., Ltd. Positive photosensitive resin composition, positive photosensitive dry film, method for producing positive photosensitive dry film, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component
JP2022151614A (ja) 2021-03-23 2022-10-07 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
CN117836352A (zh) * 2021-09-15 2024-04-05 东丽株式会社 聚酰亚胺树脂、感光性树脂组合物、固化物、有机el显示器、电子部件及半导体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010026359A (ja) * 2008-07-23 2010-02-04 Toray Ind Inc ポジ型感光性樹脂組成物
JP2012208360A (ja) * 2011-03-30 2012-10-25 Toray Ind Inc ポジ型感光性樹脂組成物

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11282155A (ja) * 1998-03-27 1999-10-15 Hitachi Chem Co Ltd 感光性樹脂組成物及びこれを用いたソルダーレジストの製造法
JP2002012761A (ja) 2000-04-28 2002-01-15 Toray Ind Inc 耐熱性樹脂組成物
US6876017B2 (en) * 2003-02-08 2005-04-05 Intel Corporation Polymer sacrificial light absorbing structure and method
JP5211438B2 (ja) 2005-06-09 2013-06-12 東レ株式会社 樹脂組成物およびそれを用いた表示装置
JP4736863B2 (ja) 2006-03-03 2011-07-27 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性ポリアミドイミド樹脂組成物、パターンの製造方法及び電子部品
EP2133743B1 (en) * 2007-03-12 2018-01-24 Hitachi Chemical DuPont Microsystems, Ltd. Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
JP5699602B2 (ja) * 2009-01-29 2015-04-15 東レ株式会社 樹脂組成物およびこれを用いた表示装置
JP2010229210A (ja) 2009-03-26 2010-10-14 Toray Ind Inc 樹脂組成物
JP5831092B2 (ja) 2011-09-27 2015-12-09 東レ株式会社 ポジ型感光性樹脂組成物
KR102144328B1 (ko) * 2014-09-26 2020-08-13 도레이 카부시키가이샤 유기 el 표시 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010026359A (ja) * 2008-07-23 2010-02-04 Toray Ind Inc ポジ型感光性樹脂組成物
JP2012208360A (ja) * 2011-03-30 2012-10-25 Toray Ind Inc ポジ型感光性樹脂組成物

Also Published As

Publication number Publication date
CN108779251A (zh) 2018-11-09
TW201809076A (zh) 2018-03-16
WO2017188153A1 (ja) 2017-11-02
TWI732855B (zh) 2021-07-11
KR20180136439A (ko) 2018-12-24
CN108779251B (zh) 2021-05-18
JPWO2017188153A1 (ja) 2019-02-28
JP7003659B2 (ja) 2022-01-20

Similar Documents

Publication Publication Date Title
KR102277707B1 (ko) 수지 조성물
JP7059632B2 (ja) 樹脂組成物
TWI670298B (zh) 樹脂、感光性樹脂組成物、耐熱性樹脂被膜之製造方法、層間絕緣膜、多層配線結構用層間絕緣膜、表面保護膜、電子零件、及有機電場發光元件的絕緣層
JP6848434B2 (ja) 樹脂および感光性樹脂組成物
KR102460973B1 (ko) 디아민 화합물, 그것을 사용한 내열성 수지 및 수지 조성물
KR102281541B1 (ko) 감광성 수지 조성물
CN112424289A (zh) 树脂组合物、树脂片、固化膜、固化膜的制造方法、半导体装置及显示装置
JP2009258634A (ja) ポジ型感光性樹脂組成物
JP2020033277A (ja) 化合物、それを用いた樹脂、樹脂組成物、硬化膜、有機ｅｌ表示装置装置、電子部品、半導体装置、電子部品または半導体装置の製造方法
WO2017081922A1 (ja) 半導体装置およびその製造方法
TWI714703B (zh) 硬化膜及其製造方法
JP7131133B2 (ja) 樹脂組成物
KR102367868B1 (ko) 경화막 및 그의 제조 방법
JP7259475B2 (ja) 感光性樹脂組成物、感光性樹脂組成物フィルムおよびこれらを用いた半導体装置
KR20230104869A (ko) 수지 조성물, 경화막, 절연막 또는 보호막, 안테나 소자, 그리고 전자 부품, 표시 장치 또는 반도체 장치 및 그의 제조 방법
TW202309141A (zh) 樹脂組成物、樹脂組成物膜、硬化膜、以及半導體裝置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right