TWI663640B - 選擇性原子層沉積之多臨界電壓功函數金屬 - Google Patents

選擇性原子層沉積之多臨界電壓功函數金屬 Download PDF

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TWI663640B
TWI663640B TW104105892A TW104105892A TWI663640B TW I663640 B TWI663640 B TW I663640B TW 104105892 A TW104105892 A TW 104105892A TW 104105892 A TW104105892 A TW 104105892A TW I663640 B TWI663640 B TW I663640B
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班德亞當
吉田直美
甘古利沙謝德利
湯普森大衛
張鎂
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美商應用材料股份有限公司
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Abstract

本發明係提供一種形成多臨界電壓裝置於基板上之方法。於一些具體實施例中，本發明之形成多臨界電壓裝置的方法可包括(a)提供基板，基板上設置有第一層，其中基板包含設置於第一層中之第一特徵以及第二特徵；(b)沉積阻擋層於基板頂部；(c)選擇性地從基板頂部移除阻擋層的一部分以暴露出第一特徵；(d)選擇性地沉積第一功函數層於第一特徵頂部；(e)移除阻擋層的剩餘部分以暴露出第二特徵；以及(f)沉積第二功函數層於第一功函數層與第二特徵頂部。

Description

選擇性原子層沉積之多臨界電壓功函數金屬
本發明一般關於形成半導體裝置的方法。
現今的互補式金屬氧化物半導體(complementary metal-oxide-semiconductor,CMOS)裝置一般使用金屬閘極材料，透過多層金屬堆疊的有效功函數控制電晶體的臨界電壓。透過改變金屬閘極堆疊的材料及/或層厚度，可在所選擇的CMOS裝置上達成不同的臨界電壓，以達成在每個裝置上選擇臨界電壓的效果。目前用來達到多臨界電壓的方法係選擇性井(selective well)、暈植入(halo implants)及金屬閘極堆疊的空間控制的混合。雖然井及暈植入的光圖案化是有效的，持續的鰭寬縮減降低了井及暈植入的效益，同時因為隨機摻雜變異，製程本質上是維持易變的。金屬閘極堆疊的空間控制可透過光圖案化及蝕刻製程的組合來達成，以區分出n型金屬氧化物半導體(NMOS)裝置與p型金屬氧化物半導體(PMOS)裝置。然而，空間控制製程的選擇性蝕刻使用了額外的蝕刻終止層，而蝕刻終止層會浪費短閘極長度的裝置中的重要空間。更進一步地，未來的CMOS裝置之具有更高深寬 比的金屬閘極結構將採用很高的選擇性，以移除多餘的非期望金屬閘極層，將導致現行的方法變成不切實際的。
因此，本案發明人研發了用來形成半導體裝置的改良方法。
本發明提供一種用來形成多臨界電壓裝置於基板上之方法及設備。於一些具體實施例中，用來形成多臨界電壓裝置的方法包含下列步驟：(a)提供基板，基板上設置有第一層，其中基板包含設置於第一層中之第一特徵及第二特徵；(b)沉積阻擋層於基板頂部；(c)選擇性地從基板頂部移除阻擋層的一部分以暴露出第一特徵；(d)選擇性地沉積第一功函數層於第一特徵頂部；(e)移除阻擋層的剩餘部分以暴露出第二特徵；以及(f)沉積第二功函數層於第一功函數層與第二特徵頂部。
於另一些具體實施例中，用來形成多臨界電壓裝置的方法包含下列步驟：(a)提供基板，基板上設置有第一層，其中基板包含設置於第一層中之第一特徵及第二特徵；(b)以旋轉塗佈製程沉積含碳層於基板頂部，其中含碳層具有大約5至約200奈米的厚度；(c)選擇性地從基板頂部移除含碳層的一部分以暴露出第一特徵；(d)以原子層沉積製程選擇性地沉積第一功函數層於第一特徵頂部，其中第一功函數層具有大約0.5奈米至約4奈米的厚度；(e)移除含碳層的剩餘部分以暴露出第二特徵；以及(f)以原子層沉積製程沉積第二功函數層於第一功函數層與第二特徵頂部，其中第二功函數層具有 大約0.5奈米至約4奈米的厚度。
於另一些具體實施例中，提供了一種電腦可讀取媒介，所述電腦可讀取媒介上儲存有指令，當指令被執行時，使一種用來形成多臨界電壓裝置的方法被實行，此方法可包含本發明所揭露之任何具體實施例的方法。
本發明其他更進一步的具體實施例揭露如下。
10‧‧‧方法
102‧‧‧步驟
104‧‧‧步驟
106‧‧‧步驟
108‧‧‧步驟
110‧‧‧步驟
112‧‧‧步驟
200‧‧‧裝置
202‧‧‧基板
204‧‧‧第一層
206‧‧‧p型傳導井
208‧‧‧n型傳導井
210‧‧‧源極區域
212‧‧‧汲極區域
214‧‧‧第一裝置
216‧‧‧第二裝置
218‧‧‧介電層
220‧‧‧障壁層
224‧‧‧阻擋層
226‧‧‧第一特徵
228‧‧‧第二特徵
230‧‧‧第一功函數層
232‧‧‧第二功函數層
234‧‧‧功函數覆蓋層
236‧‧‧填充層
380‧‧‧集成設備工具
381‧‧‧微處理控制器
382‧‧‧箭頭
383‧‧‧前端環境
384‧‧‧加載互鎖腔體
385‧‧‧艙加載器
387‧‧‧艙
388‧‧‧移送室
389‧‧‧機器人
390A-D‧‧‧製程腔體
390A-B‧‧‧檢修腔體
402‧‧‧第一特徵
404‧‧‧第二特徵
406‧‧‧第一選擇功函數金屬層
本發明之前述簡單概括的具體實施例以及後述詳細討論的具體實施例，可參考各附圖而得到清楚的瞭解。但須注意的是，各附圖係用來說明本發明最具代表性的實施例，而非將本發明僅限定於附圖之樣態，本發明所揭露之內容容許其他等效的具體實施例。
第1圖繪示根據本發明之一些具體實施例的形成一裝置之方法的流程圖。
第2A圖至第2G圖繪示根據本發明之一些具體實施例之一裝置的製造階段。
第3圖繪示根據本發明之一些具體實施例之適合用來實行本發明部分內容的集成設備工具。
第4圖繪示根據本發明之一些具體實施例之環繞式閘極(gate-all-around)裝置結構。
為了幫助理解，各附圖共有的相同元件盡可能地以相同的參考標號進行標示。各附圖並非按比例製圖，且可能為了清楚起見而簡化。可預期的是一具體實施例中之元件及特徵，不須更進一步地陳述能有益地結合於其他具體實施例 中。
本發明揭露用於在基板上形成半導體裝置的方法。於一些具體實施例中，所述創新性的方法利於用來提供不同裝置結構之多臨界電壓控制，這些裝置結構舉例而言，包含互補式金屬氧化物半導體(CMOS)鰭式場效(FinFet)電晶體裝置、平面CMOS裝置以及環繞式閘極(Gate-All-Around，GAA)CMOS裝置。於一些具體實施例中，所述創新性的方法可藉由減少製程步驟數量(例如排除蝕刻終止層的需求)、降低蝕刻選擇率考量以及較傳統製程更精準的層厚度控制，來幫助一或多個製程產量增加。此外，所述創新性的方法可容許使用更薄的層來更進一步地幫助裝置結構縮小，亦即，縮減尺寸。
第1圖繪示根據本發明之一些具體實施例之形成一半導體裝置的方法100。方法100可根據第2A圖至第2G圖所繪示之半導體裝置(裝置200)的製造階段而詳述於後。
方法100始於步驟102，步驟102可提供如第2A圖所繪示之一基板202，基板202上設置有第一層204。基板202可為任何適合的基板，例如矽基板、III-V族化合物基板、矽鍺(SiGe)基板、磊晶基板、絕緣層上覆矽(SOI)基板、顯示器基板(如液晶螢幕顯示器(LCD)、電漿顯示器、電激發光(EL)燈泡顯示器)、發光二極體(LED)基板、太陽能電池陣列、太陽能面板等。在一些具體實施例中、基板202可為半導體晶圓(如，200奈米、300奈米或類似的矽晶圓)，如已摻雜或未摻雜之多晶矽晶圓、已摻雜或未摻雜之矽晶圓、以及已圖案 化或未圖案化之晶圓等。在一些具體實施例中，第一層204可包含氧化物層。在一些具體實施例中，基板202包含p型傳導井206及/或n型傳導井208以及對應的源極/汲極區域210、212。
在例如將在基板202上形成一或多個裝置的一些具體實施例中，多個場隔離區域(未繪示於圖中)可被形成於基板202上，以隔離具有不同傳導形式(如n型或p型)的傳導井，及/或隔離相鄰的電晶體。場絕緣區域可為淺溝槽隔離(shallow trench isolation,STI)結構，舉例而言，可藉由於基板202上蝕刻出溝槽並接著以適當的絕緣體填充溝槽來形成淺溝槽隔離結構，所述絕緣體可如氧化矽(氧化物)、氮化矽(氮化物)或類似的絕緣體。
第一層204包含形成於第一層204中之第一特徵226及第二特徵228，第一特徵226界定出形成在p型傳導井206上的第一裝置214，而第二特徵228則界定出形成在n型傳導井208上的第二裝置216。於一些具體實施例中，第一特徵226及第二特徵228可為溝槽或通孔。於一些具體實施例中，第一特徵226及第二特徵228可具有約100奈米的高度及約5奈米至約20奈米的寬度。於一些具體實施例中，第一裝置214及第二裝置216各包含了介電層218以及設置於介電層218頂部之障壁層220。
於一些具體實施例中，介電層218可由單一沉積層被隨後圖案化而形成，或者同時沉積單一沉積層於圖案化區域中，以界定介電層218。於一些具體實施例中，介電層218 可包含具有約3.9之介電常數的介電材料。於一些具體實施例中，介電層218可包含一或多種介電材料，如二氧化矽(SiO2)、氮氧化矽(SiON)或其他合適的介電材料中之至少一者。於一些具體實施例中，介電層218可包含高介電值材料，如具有高於3.9之介電常數的材料。舉例而言，高介電值介電材料可為二氧化鉿(HfO2)、氧化鉿矽(HfSiOx)、氮氧化鉿矽(HfSiNOx)等材料。
於一些具體實施例中，障壁層220可包含，例如，氮化鉭(TaN)或氮化鈦(TiN)，氮化鉭(TaN)或氮化鈦(TiN)可具有任何適用於裝置200之厚度，例如，可達約40埃之厚度。於一些具體實施例中，第一裝置214及第二裝置216分別包含設置於障壁層220頂部的多晶材料(未繪示於圖中)，例如多晶矽。可透過任何適合的蝕刻製程，例如電漿蝕刻，來蝕刻上述多晶材料，以暴露出障壁層220的上表面，如第2B圖所示。多晶材料可被蝕刻以暴露出設置在p型傳導井206頂部之障壁層220的上表面，以及設置在n型傳導井208頂部之障壁層220的上表面。
於一些具體實施例中，基板202可暴露於包含氟(F)或氯(Cl)之製程氣體中，以幫助蝕刻多晶材料。於一些具體實施例中，可從上述製程氣體形成電漿。電漿中的離子可被導向基板202，以蝕刻多晶材料。
於步驟104，以及如第2B圖所示，阻擋層224沉積於基板202之第一及第二特徵226、228頂部。於一些具體實施例中，阻擋層224具有約1奈米至約200奈米的厚度。於 一些具體實施例中，阻擋層224可填入第一及第二特徵226、228。阻擋層224可由適於避免或減緩後續沉積的功函數層形成於阻擋層224上的任何材質所組成，如以下步驟108所述。於一些具體實施例中，阻擋層224為含碳層。於一些具體實施例中，含碳層，舉例而言，可為非晶碳硬光罩層。可藉由適於沉積具有挑選出之特徵(例如成分、均勻性等)的含碳層之任何製程來沉積含碳層。舉例來說，含碳層可透過旋轉塗佈製程、化學氣相沉積(CVD)製程或原子層沉積(ALD)製程來進行沉積。用於圖案化及平整化之具高裂解溫度的示範性旋轉塗佈碳薄膜可被採用。舉例而言，適合的化學氣相沉積製程所沉積出來的碳薄膜包含來自加州盛大克勞拉市的應用材料公司的APFTM。或者，於一些具體實施例中，阻擋層224為含氧層，例如氧化矽(SiOx)層或是氮氧化矽(SiON)層。可藉由適於沉積具有挑選出之特徵(例如成分、均勻性等)的含氧層之任何製程來沉積含氧層。舉例來說，含氧層可透過化學氣相沉積製程或原子層沉積製程來進行沉積。於一些具體實施例中，阻擋層224為矽(Si)層、氮化矽(SiN)層或氮化鋁(AlN)層等。
於步驟106，以及如第2C圖所示，可選擇性地從基板頂部移除部分的阻擋層224，以暴露出第一特徵226。於阻擋層224為含碳層的具體實施例中，可藉由用來去除含碳薄膜的習用技術(例如灰化技術或蝕刻技術)從基板上移除阻擋層。於一些具體實施例中，可使用適合的含氧(如氧氣(O2)、二氧化碳(CO2)等)電漿、適合的含氫(如氫氣(H2)、氨氣(NH3) 等)電漿、適合的含氮(氮氣(N2)、氨氣(NH3)等)電漿或上述各種電漿的組合(如H2/N2等)來蝕刻阻擋層224。於一些具體實施例中，如光罩層或抗反射塗佈(ARC)等圖案化層可沉積於阻擋層224頂部，以創造用來進行選擇性蝕刻的圖案。上述光罩材料可包括如光阻、氮化矽(Si3N4)或氧化矽(SiO2)的其中之一者或多者。
於步驟108，如第2D圖所示，第一功函數層230可選擇性地沉積於第一特徵226頂部。第一功函數層230可包含能與裝置200作用而產生所選擇的裝置臨界電壓之任何合適的金屬、金屬合金或含金屬材料。可組成第一功函數層230之示範性金屬、金屬合金或含金屬材料可包含氮化鈦(TiN)、鈦鋁(TiAl)、碳化鈦鋁(TiAlC)、鉭鋁(TaAl)、氮化鉭(TaN)、碳化鉭鋁(TaAlC)、鎢(W)或鈷(Co)。於一些具體實施例中，第一功函數層230具有約0.5奈米至約4奈米的厚度。
於一些具體實施例中，第一功函數層230可藉化學氣相沉積製程(CVD)或原子層沉積製程(ALD)來進行沉積。基板202暴露於前驅氣體中，前驅氣體可選擇性地沉積第一功函數層230於基板的第一部分頂部而不沉積於阻擋層224頂部。於一些具體實施例中，前驅氣體為於約攝氏200度時具有大於約0.1毫托耳之蒸氣壓的金屬有機化合物或金屬無機化合物，且前驅氣體包含鎢(W)、鉬(Mo)、鈮(Nb)、鈷(Co)、鎳(Ni)、釩(V)、鋁(Al)或釕(Ru)中之一者或至少一者。舉例而言，於一些具體實施例中，前驅氣體為WCl5、Cp’2WH2、Cp’W(CO)3H、Cp’W(CO)2NO、(RN)2(R’2N)2W、WOCl4、 Cp’2MoH2、Cp’Mo(CO)3H、Cp’Mo(CO)2NO、(RN)2(R’2N)2Mo、MoOCl4、(RN)(R’2N)3Nb、NbCl5、Cp2NbH3、CpNb(CO)4H、Cp(allyl)Nb(CO)中之一者，其中R及R'分別獨立地選自氫或烷基(2-5)，且其中Cp’為R1R2R3R4R5Cp，其中各R分別獨立地選自氫、烷基或烯烴等。舉例而言，於一些具體實施例中，當第一功函數層為鈷，合適的前驅氣體可包括羰基鈷(cobalt carbonyl)複合物、脒基鈷(cobalt amidinate)化合物、二茂鈷(cobaltocene,Co(C5H5)2)化合物、二烯基鈷(cobalt dienyl)複合物、亞硝醯基鈷(cobalt nitrosyl)複合物，上述各物質的衍生物、複合物、電漿或組合物等。舉例而言，於一些具體實施例中，乙醯基六羰基二鈷(dicobalt hexacarbonyl acetyl)化合物可用來作為前驅物以形成鈷的功函數層。或者，於一些具體實施例中，當第一功函數層為鎢，合適的前驅氣體可包括六氟化鎢(tungsten hexafluoride,WF6)、六氯化鎢(tungsten hexachloride,WCl6)、六羰鎢(tungsten carbonyl,W(CO)6)、雙(環戊二烯)氯化鎢(bis(cyclopentadienyl)tungsten dichloride,Cp2WCl2)、三羰基三甲苯鎢(mesitylene tungsten tricarbonyl,C9H12W(CO)3)或上述各物質的衍生物。作為另一種選擇地，於一些具體實施例中，當第一功函數層為鎳，合適的前驅氣體可包含羰基鎳(nickel carbonyl)複合物、脒基鎳(nickel amidinate)化合物、二茂鎳(nickelocene,Ni(C5H5)2)化合物、二烯基鎳(nickel dienyl)複合物、亞硝醯基鎳(nickel nitrosyl)複合物，上述各物質的衍生物、複合物、電漿或組合物等。作為另一種選擇地，於一 些具體實施例中，當第一功函數層為釕，合適的前驅氣體可包含羰基釕(ruthenium carbonyl)複合物、脒基釕(ruthenium amidinate)化合物、二茂釕(ruthenium ocene,Ru(C5H5)2)化合物、二烯基釕(ruthenium dienyl)複合物、亞硝醯基釕(ruthenium nitrosyl)複合物，上述各物質的衍生物、複合物、電漿或組合物等。於一些具體實施例中，當使用氯化物前驅物沉積功函數層時，加入氯化氫氣體可抑制功函數層沉積於阻擋層頂部。
於步驟110，如第2E圖所示，阻擋層224的剩餘部分可被移除以暴露出第二特徵228。如上述，可藉由用來從基板去除含碳薄膜的習用技術來移除阻擋層，例如灰化技術或蝕刻技術。於一些具體實施例中，可使用含氧(如氧氣(O2)、二氧化碳(CO2)等)電漿、含氫(如氫氣(H2)、氨氣(NH3)等)電漿、上述各種電漿的組合或類似者來蝕刻阻擋層224。於一些具體實施例中，在步驟108沉積第一功函數層230期間，第一功函數層230之薄層可形成在覆蓋第二特徵228之阻擋層224的一部分的頂部。在這些具體實施例中，在蝕刻覆蓋第二特徵228之阻擋層224的部分之前，可以習用的電漿蝕刻技術來蝕刻形成在覆蓋第二特徵228之阻擋層224的一部分的頂部之第一功函數層230的部分。
於步驟112，以及如第2F圖所示，第二功函數層232被沉積於第一功函數層230及第二特徵228之頂部。第二功函數層232可包含能與裝置200作用而產生所選擇的裝置臨界電壓之任何合適的金屬、金屬合金或含金屬材料。可組成第一功函數層230或第二攻函數層232的示範性金屬、金屬 合金或含金屬材料可包括氮化鈦(TiN)、鈦鋁、羰化鈦鋁(TiAlC)、鉭鋁(TaAl)、氮化鉭(TaN)、羰化鉭鋁(TaAlC)、鎢(W)或鈷(Co)。於一些具體實施例中，第二功函數層232具有約0.5奈米至約4奈米的厚度。第二功函數層232與第一功函數層230不同，例如，第一功函數層230可為氮化鈦(TiN)而第二功函數層232可為鉭鋁(TaAl)。
於一些具體實施例中，第二功函數層232可透過原子層沉積製程而進行沉積。舉例而言，基板202可暴露於經選擇的前驅氣體中，以將第二功函數層232沉積於基板202的第一部分之第一功函數層230及第二特徵228頂部。於一些具體實施例中，第二前驅氣體為於約攝氏200度時具有大於約0.1毫托耳之蒸氣壓的金屬有機化合物或金屬無機化合物，且前驅氣體包含鎢(W)、鉬(Mo)、鈮(Nb)、鈷(Co)、鎳(Ni)、釩(V)、鋁(Al)或釕(Ru)中之一者或至少一者。舉例而言，於一些具體實施例中，前驅氣體為WCl5、Cp’2WH2、Cp’W(CO)3H、Cp’W(CO)2NO、(RN)2(R’2N)2W、WOCl4、Cp’2MoH2、Cp’Mo(CO)3H、Cp’Mo(CO)2NO、(RN)2(R’2N)2Mo、MoOCl4、(RN)(R’2N)3Nb、NbCl5、Cp2NbH3、CpNb(CO)4H、Cp(allyl)Nb(CO)中之一者，其中R及R'分別獨立地選自氫或烷基(2-5)，且其中Cp’為R1R2R3R4R5Cp，其中各R分別獨立地選自氫、烷基或烯烴等。舉例而言，當第二功函數層232為鈷，合適的前驅氣體可包括羰基鈷(cobalt carbonyl)複合物、脒基鈷(cobalt amidinate)化合物、二茂鈷(cobaltocene,Co(C5H5)2)化合物、二烯基鈷(cobalt dienyl)複合物、亞硝醯基 鈷(cobalt nitrosyl)複合物，上述各物質的衍生物、複合物、電漿或組合物等。舉例而言，於一些具體實施例中，乙醯基六羰基二鈷(dicobalt hexacarbonyl acetyl)化合物可用來作為前驅物以形成鈷的功函數層。或者，當第二功函數層為鎢，合適的前驅氣體可包括六氟化鎢(tungsten hexafluoride,WF6)、六氯化鎢(tungsten hexachloride,WCl6)、六羰鎢(tungsten carbonyl,W(CO)6)、雙(環戊二烯)氯化鎢(bis(cyclopentadienyl)tungsten dichloride,Cp2WCl2)、三羰基三甲苯鎢(mesitylene tungsten tricarbonyl,C9H12W(CO)3)或上述各物質的衍生物。或者，於一些具體實施例中，當第二功函數層為鎳，合適的前驅氣體可包括羰基鎳(nickel carbonyl)複合物、脒基鎳(nickel amidinate)化合物、二茂鎳(nickelocene,Ni(C5H5)2)化合物、二烯基鎳(nickel dienyl)複合物、亞硝醯基鎳(nickel nitrosyl)複合物，上述各物質的衍生物、複合物、電漿或組合物等。或者，於一些具體實施例中，當第二功函數層為釕，合適的前驅氣體可包含羰基釕(ruthenium carbonyl)複合物、脒基釕(ruthenium amidinate)化合物、二茂釕(ruthenium ocene,Ru(C5H5)2)化合物、二烯基釕(ruthenium dienyl)複合物、亞硝醯基釕(ruthenium nitrosyl)複合物，上述各物質的衍生物、複合物、電漿或組合物等。於一些具體實施例中，前驅氣體可為金屬氯化物(如氯化鎢(WCl5)或氯化鉭(TaCl))與含矽氣體(如矽烷(SiH4))的組合。於一些具體實施例中，第二功函數層232具有約0.5奈米至約4奈米的厚度，或者約0.5奈米至約10奈米的厚度。額外的功函數層也可被沉 積而達到裝置的選擇臨界電壓。
方法100的步驟104至110可依需求而重複進行，以於第一特徵內獲得第一選擇功函數，並於第二特徵內獲得的第二選擇功函數。於形成具有選擇的功函數的功函數層230、232後，可依需求沉積額外的層於特徵226、228中以完成裝置200的形成。舉例而言，如第2G圖所示，由如氮化鈦(TiN)所構成的功函數覆蓋層234可沉積於特徵226、228中以防止功函數層230、232氧化。於沉積功函數覆蓋層234後，填充層236可沉積於特徵226、228中。填充層可為如鋁(Al)、鈦鋁(TiAl)、鈷鋁(CoAl)或鎢(W)等導電材料。
於一些具體實施例中，最終裝置200為一種平面鰭式場效電晶體(planar FinFet)結構，如第2G圖所示。於一些具體實施例中，方法100可用以形成本發明之技術領域中所熟知合適的環繞式閘極(Gate-All-Around,GAA)裝置結構。舉例來說，如第4圖所示，環繞式閘極裝置結構400具有第一特徵402及第二特徵404，其中第一特徵402具有第一選擇功函數金屬層406。
第3圖繪示了適合用來實行本發明部分方法的集成設備工具。一般而言，集成設備工具為包含多個腔室(例如，製程腔室390A-D或檢修腔室391A-B等)的模組化系統。上述多個腔室用來實行多種功能，包括基板清潔、基板中心尋找及定向、抽氣、退火、沉積及/或蝕刻。於一些具體實施例中，集成設備工具可包含至少一個蝕刻設備及原子層沉積或化學氣相沉積設備，所述設備可經配置以實行上述用來製作多臨 界電壓裝置之方法100。集成設備工具的多個腔室可裝設於一中央移送腔室上，中央移送腔室內容納有機器人以於各腔室間運送基板。移送腔室一般維持真空狀態且提供中繼站(intermediate stage)，以從一個腔室運送基板至另一腔室及/或至位於集成設備工具前端之負載鎖定腔室(load lock chamber)。
作為圖解，第3圖係繪示特定的集成裝置工具380的平面圖。集成設備工具380通常包含複數個腔室及機器人，且更佳地可設置微處理器控制器381，微處理器控制器381可經程式化以控制不同的製程方法於集成裝備工具380上執行。所繪示之前端環境383經設置以選擇性地與一對負載鎖定腔室384溝通。設置在前端環境383中的艙加載器(pod loader)385可線性及旋轉地動作(箭頭382)以於負載鎖定腔室384及多個設置於前端環境383的艙387之間運送基板卡匣。負載鎖定腔室384於前端環境383及移送腔室388間提供第一真空介面。可提供兩個負載鎖定腔室384，以藉由交替地與移送腔室388及前端環境383溝通，來增加產量。因此，當一個負載鎖定腔室384與移送腔室388溝通時，第二個負載鎖定腔室384則與前端環境383溝通。機器人389可設置於移送腔室388的中央處，以將基板由負載鎖定腔室384運送至製程腔室390A-D及檢修腔室391A-B中之一者。
於一些具體實施例中，上述用來形成多臨界電壓裝置之方法100可在一或多個製程腔體390A-D中執行。製程腔室中之至少一者(例如製程腔體390A)可為原子層沉積或化學 氣相沉積設備，用來在基板上進行製程，導致阻擋層224的沉積及/或功函數層230、232的沉積。製程腔室之至少一者(例如製程腔體390B)可為電漿蝕刻腔室，用以在基板上進行製程，導致部分或全部的阻擋層224的移除。
雖然前述內容均直接以所揭露的具體實施例進行說明，但在不偏離本發明的基礎精神之下，本發明之範圍可設計其他更進一步的具體實施例，以致使其涵蓋所有可能的改變以及具相等性的安排。

Claims (18)

  1. 一種形成一多臨界電壓裝置之方法，包含：(a)提供一基板，該基板上設置有一第一層，其中該基板包含設置於該第一層中之一第一特徵以及一第二特徵；(b)沉積一阻擋層於該基板頂部；(c)選擇性地從該基板頂部移除該阻擋層之一部分，以暴露出該第一特徵；(d)選擇性地沉積一第一功函數層於該第一特徵頂部而不沉積於該阻擋層之一剩餘部分頂部；(e)移除該阻擋層之該剩餘部分，以暴露出該第二特徵；以及(f)沉積一第二功函數層於該第一功函數層及該第二特徵頂部。
  2. 如請求項1所述之方法，其中該阻擋層係一含碳層或一含氧層中之一者。
  3. 如請求項2所述之方法，其中該含碳層係一非晶碳硬光罩層。
  4. 如請求項2所述之方法，其中該含碳層係以一旋轉塗佈製程、化學氣相沉積製程或原子層沉積製程中之一者進行沉積。
  5. 如請求項1所述之方法，其中該阻擋層具有約5奈米至約200奈米的厚度。
  6. 如請求項1所述之方法，其中該第一功函數層具有約0.5奈米至約10奈米的厚度，且其中該第二功函數層層具有約0.5奈米至約10奈米的厚度。
  7. 如請求項1至6中任一項所述之方法，其中移除該阻擋層之一部分的步驟進一步包含：以從含氧氣體或含氫氣體中之一者而形成的電漿圖案化該阻擋層。
  8. 如請求項1至6中任一項所述之方法，進一步包含：以一原子層沉積製程沉積該第一功函數層。
  9. 如請求項8所述之方法，進一步包含：暴露該基板於一或多種前驅氣體中，以選擇性地於該第一特徵頂部沉積該第一功函數層。
  10. 如請求項9所述之方法，進一步包含：暴露該阻擋層於一第一氣體中，該第一氣體延緩該第一功函數層形成於該阻擋層頂部。
  11. 如請求項10所述之方法，其中該第一氣體係氯化氫。
  12. 如請求項9所述之方法，其中該前驅氣體包含鎢、鉬、鈮、鈷、鎳、釩、鋁或釕中之一者。
  13. 如請求項1至6中任一項所述之方法，其中沉積該第二功函數層進一步包含：暴露該基板於一第二前驅氣體中。
  14. 如請求項13所述之方法，其中該第二前驅氣體包含鎢、鉬、鈮、鈷、鎳、釩、鋁或釕中之一者。
  15. 如請求項1至6中任一項所述之方法，重複步驟(b)-(f)以於該第一特徵內獲得一第一選擇功函數，並於該第二特徵內獲得一第二選擇功函數。
  16. 如請求項1至6中任一項所述之方法，其中該第一特徵及該第二特徵分別形成於一第一傳導井及一第二傳導井頂部。
  17. 一種形成一多臨界電壓裝置之方法，包含：(a)提供一基板，該基板上設置有一第一層，其中該基板包含設置於該第一層中之一第一特徵以及一第二特徵；(b)沉積一含碳層或一含氧層中之一者於該基板頂部，其中該含碳層或該含氧層具有約1至約200奈米的厚度；(c)選擇性地從該基板頂部移除該含碳層或該含氧層之一部分，以暴露出該第一特徵；(d)選擇性地以一原子層沉積製程沉積一第一功函數層於該第一特徵頂部而不沉積於該含碳層或該含氧層之一剩餘部分頂部，其中該第一功函數層具有約0.5奈米至約4奈米之厚度；(e)移除該含碳層或該含氧層之該剩餘部分，以暴露出該第二特徵；以及(f)以一原子層沉積製程沉積一第二功函數層於該第一功函數層及該第二特徵頂部，其中該第二功函數層具有約0.5奈米至約4奈米之厚度。
  18. 一種非暫態電腦可讀取媒介，該非暫態電腦可讀取媒介上儲存一指令，當該指令被執行時，導致一種用來形成多臨界電壓裝置的方法，該方法包含：(a)提供一基板，該基板上設置有一第一層，其中該基板包含設置於該第一層中之一第一特徵以及一第二特徵；(b)沉積一阻擋層於該基板頂部；(c)選擇性地從該基板頂部移除該阻擋層之一部分，以暴露出該第一特徵；(d)選擇性地沉積一第一功函數層於該第一特徵頂部而不沉積於該阻擋層之一剩餘部分頂部；(e)移除該阻擋層之該剩餘部分，以暴露出該第二特徵；以及(f)沉積一第二功函數層於該第一功函數層及該第二特徵頂部。
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