TWI621287B - 發光裝置及形成發光裝置之方法 - Google Patents
發光裝置及形成發光裝置之方法 Download PDFInfo
- Publication number
- TWI621287B TWI621287B TW103138242A TW103138242A TWI621287B TW I621287 B TWI621287 B TW I621287B TW 103138242 A TW103138242 A TW 103138242A TW 103138242 A TW103138242 A TW 103138242A TW I621287 B TWI621287 B TW I621287B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- lens
- substrate
- refractive index
- light
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 55
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 229920005591 polysilicon Polymers 0.000 claims abstract description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 abstract description 4
- 229920000647 polyepoxide Polymers 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 230000031700 light absorption Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- -1 polysiloxane Polymers 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
Landscapes
- Led Device Packages (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361901072P | 2013-11-07 | 2013-11-07 | |
| US61/901,072 | 2013-11-07 | ||
| US201461935360P | 2014-02-04 | 2014-02-04 | |
| US61/935,360 | 2014-02-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201538892A TW201538892A (zh) | 2015-10-16 |
| TWI621287B true TWI621287B (zh) | 2018-04-11 |
Family
ID=51999464
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107100281A TWI648880B (zh) | 2013-11-07 | 2014-11-04 | 形成發光裝置之方法 |
| TW103138242A TWI621287B (zh) | 2013-11-07 | 2014-11-04 | 發光裝置及形成發光裝置之方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107100281A TWI648880B (zh) | 2013-11-07 | 2014-11-04 | 形成發光裝置之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9899579B2 (enExample) |
| EP (1) | EP3066698B1 (enExample) |
| JP (2) | JP2016535937A (enExample) |
| KR (1) | KR102304741B1 (enExample) |
| CN (1) | CN105684174B (enExample) |
| TW (2) | TWI648880B (enExample) |
| WO (1) | WO2015068072A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9508907B2 (en) * | 2014-09-15 | 2016-11-29 | Koninklijke Philips N.V. | Light emitting device on a mount with a reflective layer |
| CN107689408B (zh) * | 2016-08-04 | 2020-03-17 | 展晶科技(深圳)有限公司 | 发光二极管覆晶晶粒及显示器 |
| KR102709497B1 (ko) * | 2016-10-27 | 2024-09-26 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
| JP6443429B2 (ja) * | 2016-11-30 | 2018-12-26 | 日亜化学工業株式会社 | パッケージ及びパッケージの製造方法、発光装置及び発光装置の製造方法 |
| CN111293199A (zh) * | 2017-01-20 | 2020-06-16 | 光宝光电(常州)有限公司 | 发光二极管封装结构、发光二极管封装模块 |
| US10020426B1 (en) * | 2017-04-10 | 2018-07-10 | Advanced Optoelectronic Technology, Inc | Light emitting device |
| KR102454083B1 (ko) * | 2017-08-30 | 2022-10-12 | 엘지디스플레이 주식회사 | 마이크로-led 표시장치 및 그 제조방법 |
| CN109638137A (zh) * | 2018-11-07 | 2019-04-16 | 惠州市华星光电技术有限公司 | 倒装led芯片及直下式背光模组 |
| CN113892007B (zh) * | 2019-03-06 | 2023-03-28 | 亮锐有限责任公司 | 模块化led串 |
| US20220190213A1 (en) * | 2020-12-15 | 2022-06-16 | Lumileds Llc | Material stack for leds with a dome |
| KR20230045840A (ko) | 2021-09-29 | 2023-04-05 | 엘지디스플레이 주식회사 | 표시 장치 |
| CN116344723B (zh) * | 2023-05-31 | 2023-08-29 | 硅能光电半导体(广州)有限公司 | 一种蝙蝠翼光型led灯珠结构及其制备方法 |
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|---|---|---|---|---|
| US20050285133A1 (en) * | 2004-06-18 | 2005-12-29 | Chi Mei Optoelectronics Corp. | Light emitting diode package |
| WO2007097664A1 (fr) * | 2006-02-26 | 2007-08-30 | Zakrytoe Aktsionernoe Obschestvo 'pola+' | Dispositif à diode lumineuse |
| JP2009289816A (ja) * | 2008-05-27 | 2009-12-10 | Kyocera Corp | 発光装置及び照明装置 |
| TW201244150A (en) * | 2011-03-25 | 2012-11-01 | Sharp Kk | Light emitting device, lighting device, and display device |
| JP2012231183A (ja) * | 2006-11-17 | 2012-11-22 | Rensselaer Polytechnic Institute | 高出力白色発光ダイオードおよびその製造方法 |
| JP2013058744A (ja) * | 2011-08-16 | 2013-03-28 | Du Pont Mitsui Fluorochem Co Ltd | 発光ダイオード用リフレクターおよびハウジング |
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| JP3099864B2 (ja) * | 1994-12-05 | 2000-10-16 | サンケン電気株式会社 | 半導体素子を有する回路装置及びその製造方法 |
| JP4125848B2 (ja) * | 1999-12-17 | 2008-07-30 | ローム株式会社 | ケース付チップ型発光装置 |
| JP4038757B2 (ja) * | 2000-09-29 | 2008-01-30 | オムロン株式会社 | 光素子用光学デバイス及び当該光素子用光学デバイスを用いた機器 |
| US6578989B2 (en) * | 2000-09-29 | 2003-06-17 | Omron Corporation | Optical device for an optical element and apparatus employing the device |
| KR100436302B1 (ko) * | 2000-09-29 | 2004-07-02 | 오므론 가부시키가이샤 | 광소자용 광학 디바이스 및 해당 광소자용 광학디바이스를 이용한 기기 |
| JP2002261333A (ja) * | 2001-03-05 | 2002-09-13 | Toyoda Gosei Co Ltd | 発光装置 |
| JP2005223112A (ja) * | 2004-02-05 | 2005-08-18 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード |
| CN101180557B (zh) | 2005-03-29 | 2013-03-13 | 京瓷株式会社 | 发光装置以及照明装置 |
| JP4991173B2 (ja) | 2005-04-27 | 2012-08-01 | 京セラ株式会社 | 発光素子搭載用基体ならびにこれを用いた発光装置 |
| US7378686B2 (en) * | 2005-10-18 | 2008-05-27 | Goldeneye, Inc. | Light emitting diode and side emitting lens |
| JP5047162B2 (ja) * | 2006-03-29 | 2012-10-10 | 京セラ株式会社 | 発光装置 |
| US7905635B2 (en) * | 2006-04-25 | 2011-03-15 | Koninklijke Phillips Electronics N.V. | Immersed LEDs |
| JP2010517213A (ja) * | 2007-01-19 | 2010-05-20 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 改善された熱伝達を伴う発光装置 |
| US8469578B2 (en) * | 2007-01-19 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Optical element having at least one embedded reflector |
| JP2008230866A (ja) * | 2007-03-16 | 2008-10-02 | Daicel Chem Ind Ltd | 空隙形成剤及び多孔質成形体 |
| JP5014182B2 (ja) * | 2008-01-30 | 2012-08-29 | 京セラ株式会社 | 発光装置 |
| DE102008016534A1 (de) * | 2008-03-31 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
| US7800125B2 (en) * | 2008-07-09 | 2010-09-21 | Himax Display, Inc. | Light-emitting diode package |
| JP5689225B2 (ja) * | 2009-03-31 | 2015-03-25 | 日亜化学工業株式会社 | 発光装置 |
| US8168998B2 (en) | 2009-06-09 | 2012-05-01 | Koninklijke Philips Electronics N.V. | LED with remote phosphor layer and reflective submount |
| JP5334702B2 (ja) * | 2009-06-23 | 2013-11-06 | 京セラ株式会社 | 発光装置、および照明装置 |
| US9048404B2 (en) * | 2009-07-06 | 2015-06-02 | Zhuo Sun | Thin flat solid state light source module |
| DE102009033287A1 (de) * | 2009-07-15 | 2011-01-20 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
| US20110062470A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Reduced angular emission cone illumination leds |
| JP2011066302A (ja) * | 2009-09-18 | 2011-03-31 | Showa Denko Kk | 半導体発光装置およびその製造方法 |
| JP2011076691A (ja) * | 2009-10-01 | 2011-04-14 | Mitsubishi Kagaku Media Co Ltd | 光記録媒体 |
| KR20110121176A (ko) * | 2010-04-30 | 2011-11-07 | 삼성엘이디 주식회사 | 반도체 발광소자 및 이의 제조방법 |
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| JP5449274B2 (ja) | 2011-03-25 | 2014-03-19 | シャープ株式会社 | 照明装置、および表示装置 |
| WO2012141094A1 (ja) * | 2011-04-13 | 2012-10-18 | シャープ株式会社 | 光源モジュールおよびこれを備えた電子機器 |
| CN103650183B (zh) * | 2011-06-30 | 2017-02-22 | 松下知识产权经营株式会社 | 发光装置 |
| JP2013077798A (ja) | 2011-09-14 | 2013-04-25 | Toyoda Gosei Co Ltd | ガラス封止ｌｅｄランプ及びその製造方法 |
-
2014
- 2014-10-22 CN CN201480061133.8A patent/CN105684174B/zh active Active
- 2014-10-22 EP EP14805353.1A patent/EP3066698B1/en active Active
- 2014-10-22 WO PCT/IB2014/065525 patent/WO2015068072A1/en not_active Ceased
- 2014-10-22 KR KR1020167014871A patent/KR102304741B1/ko active Active
- 2014-10-22 JP JP2016528068A patent/JP2016535937A/ja active Pending
- 2014-10-22 US US15/032,021 patent/US9899579B2/en active Active
- 2014-11-04 TW TW107100281A patent/TWI648880B/zh active
- 2014-11-04 TW TW103138242A patent/TWI621287B/zh active
-
2019
- 2019-12-27 JP JP2019237633A patent/JP2020061574A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050285133A1 (en) * | 2004-06-18 | 2005-12-29 | Chi Mei Optoelectronics Corp. | Light emitting diode package |
| WO2007097664A1 (fr) * | 2006-02-26 | 2007-08-30 | Zakrytoe Aktsionernoe Obschestvo 'pola+' | Dispositif à diode lumineuse |
| JP2012231183A (ja) * | 2006-11-17 | 2012-11-22 | Rensselaer Polytechnic Institute | 高出力白色発光ダイオードおよびその製造方法 |
| JP2009289816A (ja) * | 2008-05-27 | 2009-12-10 | Kyocera Corp | 発光装置及び照明装置 |
| TW201244150A (en) * | 2011-03-25 | 2012-11-01 | Sharp Kk | Light emitting device, lighting device, and display device |
| JP2013058744A (ja) * | 2011-08-16 | 2013-03-28 | Du Pont Mitsui Fluorochem Co Ltd | 発光ダイオード用リフレクターおよびハウジング |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3066698B1 (en) | 2022-05-11 |
| WO2015068072A1 (en) | 2015-05-14 |
| TW201538892A (zh) | 2015-10-16 |
| JP2020061574A (ja) | 2020-04-16 |
| US9899579B2 (en) | 2018-02-20 |
| US20160260872A1 (en) | 2016-09-08 |
| JP2016535937A (ja) | 2016-11-17 |
| CN105684174A (zh) | 2016-06-15 |
| TW201817047A (zh) | 2018-05-01 |
| EP3066698A1 (en) | 2016-09-14 |
| TWI648880B (zh) | 2019-01-21 |
| CN105684174B (zh) | 2018-10-09 |
| KR102304741B1 (ko) | 2021-09-24 |
| KR20160083910A (ko) | 2016-07-12 |
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