JP2016535937A - Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート - Google Patents

Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート Download PDF

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Publication number
JP2016535937A
JP2016535937A JP2016528068A JP2016528068A JP2016535937A JP 2016535937 A JP2016535937 A JP 2016535937A JP 2016528068 A JP2016528068 A JP 2016528068A JP 2016528068 A JP2016528068 A JP 2016528068A JP 2016535937 A JP2016535937 A JP 2016535937A
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Japan
Prior art keywords
layer
lens
led
refractive index
substrate surface
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Pending
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JP2016528068A
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English (en)
Japanese (ja)
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JP2016535937A5 (enExample
Inventor
メルヴィン バターワース，マーク
メルヴィン バターワース，マーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Koninklijke Philips NV
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Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Publication of JP2016535937A publication Critical patent/JP2016535937A/ja
Publication of JP2016535937A5 publication Critical patent/JP2016535937A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

Landscapes

  • Led Device Packages (AREA)
JP2016528068A 2013-11-07 2014-10-22 Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート Pending JP2016535937A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361901072P 2013-11-07 2013-11-07
US61/901,072 2013-11-07
US201461935360P 2014-02-04 2014-02-04
US61/935,360 2014-02-04
PCT/IB2014/065525 WO2015068072A1 (en) 2013-11-07 2014-10-22 Substrate for led with total-internal reflection layer surrounding led

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019237633A Division JP2020061574A (ja) 2013-11-07 2019-12-27 Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート

Publications (2)

Publication Number Publication Date
JP2016535937A true JP2016535937A (ja) 2016-11-17
JP2016535937A5 JP2016535937A5 (enExample) 2017-11-30

Family

ID=51999464

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016528068A Pending JP2016535937A (ja) 2013-11-07 2014-10-22 Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート
JP2019237633A Pending JP2020061574A (ja) 2013-11-07 2019-12-27 Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019237633A Pending JP2020061574A (ja) 2013-11-07 2019-12-27 Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート

Country Status (7)

Country Link
US (1) US9899579B2 (enExample)
EP (1) EP3066698B1 (enExample)
JP (2) JP2016535937A (enExample)
KR (1) KR102304741B1 (enExample)
CN (1) CN105684174B (enExample)
TW (2) TWI621287B (enExample)
WO (1) WO2015068072A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2018092974A (ja) * 2016-11-30 2018-06-14 日亜化学工業株式会社 パッケージ及びパッケージの製造方法、発光装置及び発光装置の製造方法

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US9508907B2 (en) * 2014-09-15 2016-11-29 Koninklijke Philips N.V. Light emitting device on a mount with a reflective layer
CN107689408B (zh) * 2016-08-04 2020-03-17 展晶科技(深圳)有限公司 发光二极管覆晶晶粒及显示器
KR102709497B1 (ko) * 2016-10-27 2024-09-26 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 패키지
CN108336075B (zh) * 2017-01-20 2020-03-27 光宝光电(常州)有限公司 发光二极管封装结构、发光二极管封装模块及其成形方法
US10020426B1 (en) * 2017-04-10 2018-07-10 Advanced Optoelectronic Technology, Inc Light emitting device
KR102454083B1 (ko) * 2017-08-30 2022-10-12 엘지디스플레이 주식회사 마이크로-led 표시장치 및 그 제조방법
CN109638137A (zh) * 2018-11-07 2019-04-16 惠州市华星光电技术有限公司 倒装led芯片及直下式背光模组
EP3935310A1 (en) * 2019-03-06 2022-01-12 Lumileds Holding B.V. Modular led string
US20220190213A1 (en) * 2020-12-15 2022-06-16 Lumileds Llc Material stack for leds with a dome
KR20230045840A (ko) 2021-09-29 2023-04-05 엘지디스플레이 주식회사 표시 장치
CN116344723B (zh) * 2023-05-31 2023-08-29 硅能光电半导体(广州)有限公司 一种蝙蝠翼光型led灯珠结构及其制备方法

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JPH08162574A (ja) * 1994-12-05 1996-06-21 Sanken Electric Co Ltd 半導体素子を有する回路装置
JP2003046143A (ja) * 2000-09-29 2003-02-14 Omron Corp 光素子用光学デバイス及び当該光素子用光学デバイスを用いた機器
JP2002261333A (ja) * 2001-03-05 2002-09-13 Toyoda Gosei Co Ltd 発光装置
JP2005223112A (ja) * 2004-02-05 2005-08-18 Citizen Electronics Co Ltd 表面実装型発光ダイオード
WO2006104061A1 (ja) * 2005-03-29 2006-10-05 Kyocera Corporation 反射部材、これを用いた発光装置および照明装置
JP2007201392A (ja) * 2005-04-27 2007-08-09 Kyocera Corp 発光素子搭載用基体ならびにこれを用いた発光装置
WO2007114306A1 (ja) * 2006-03-29 2007-10-11 Kyocera Corporation 発光装置
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WO2009121314A1 (de) * 2008-03-31 2009-10-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes halbleiterbauelement und verfahren zur herstellung eines strahlungsemittierenden halbleiterbauelements
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JP2012533182A (ja) * 2009-07-15 2012-12-20 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光ダイオードおよび発光ダイオードの製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018092974A (ja) * 2016-11-30 2018-06-14 日亜化学工業株式会社 パッケージ及びパッケージの製造方法、発光装置及び発光装置の製造方法

Also Published As

Publication number Publication date
TWI648880B (zh) 2019-01-21
CN105684174A (zh) 2016-06-15
EP3066698B1 (en) 2022-05-11
TW201538892A (zh) 2015-10-16
EP3066698A1 (en) 2016-09-14
WO2015068072A1 (en) 2015-05-14
TW201817047A (zh) 2018-05-01
KR102304741B1 (ko) 2021-09-24
KR20160083910A (ko) 2016-07-12
CN105684174B (zh) 2018-10-09
JP2020061574A (ja) 2020-04-16
TWI621287B (zh) 2018-04-11
US9899579B2 (en) 2018-02-20
US20160260872A1 (en) 2016-09-08

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