201248929 六、發明說明： 【發明所屬之技術領域】 體 [0001] 本發明涉及一種半導體發光元件，特別涉及—種半導 發光元件的封裝結構及其製造方法。 【先前技術】 顯示幕 [〇〇〇2] 半導體發光元件’例如發光二極體，憑藉其發光效率言 、體積小、重量輕、環保等優點，已被廣泛地應用到♦ 前的各個領域當中，例如用作指示燈、照明燈、 等。 [0003] [0004] 發光二極體在應用到上述各領域中之前，需要進行封# ，以保護發光一極體晶片，從而獲得較高的發光效率及 較長的使用壽命。發光二極體封裝制程通常包含利用主 射或模鑄的方式，將液態的封裝材料覆蓋在發光二極體 晶粒表面，接著，加熱固化所述液態的封裝材料以形成 封裝層。通常業界還將螢光粉加入該封裝材料中，以/ 發光二極體發出不同顏色的光。然而，發光二極體 的光能激發㈣光粉有限，若封㈣料内的螢光粉使用 過多，样料致成本提高，光粉本 體發出的光而影響發光效率。m 紙千導 的方式來節省成本，但封裝#料太雜用減少封裝材料 有效覆蓋整個發光二極體， 二太y致使封裝材料難於 k ^良率下降。 【發明内容】 有鑒於此，有必要提供一種半導 其製造方法，使用該製造方法彳光元件封裝結構及 有較高的良率。 丨的半導體封裝結構具 100117511 表單編號A0101 第4頁/共16真 201248929 種半導體發光元件封裝結構，包括基板、設於所述基 板上的電極、固定在基板上並與電極達成電性連接的半 導體毛光^0件’以及置於基板上且包覆_導體發光元件 的螢光層，所述螢光層由黏度為5000-50000cps的液態 材料烘烤而成。 [0_-種半導體發光元件封裝結構的製造方法 ，步驟包括： 闺提供基板，所述基衫有電極； ❹[G_ Elcf導體發光元件，將所述半導體發光元件設置在基 板上並與電極達成電性連接； _9]使用點膠針，將黏度為_Q_5刚〇咖的液態材料塗覆 於半導體發光元件周圍，所賴態材料包含轉脂以及 螢光物質；以及 [0010]烘烤所述液態材料形成螢光廣。 剛本發明半導體㈣結構通過調整#光層錄態時的點度 ，可使螢光層能較好的覆蓋半導體發光元件，從而得到 較好的封裝性能。同時該製造方法採用點膠的方式，可 方便控制液態材料的用量，避免浪費螢光材料，可以降 低成本。 【實施方式】 [0012]請參考圖5，一種半導體發光元件封裝結構包括基板1〇〇 ，基板100上設有兩個電極10、11，同時還設有一個反射 杯70。反射杯70的底部設有半導趙發光元件2〇。半導體 發光元件20與基板1〇〇上的兩個電板iq、Η形成電連接 。螢光層30完全包復在半導體發先元件2〇的周圍。另外 100117511 表單編號A0101 第5頁/共16莧 1002029410-0 201248929 ’還有一層封裝層60置於螢光層30上並填滿反射杯7〇。 [〇〇13] 基板可由導熱性良好的材料所製成，比如金屬或陶莞 ，以便於半導體發光元件20的散熱。若基板1〇〇由金屬材 料製成時’需考慮基板100與兩個電極10、11的隔絕，此 為本領域的公知常識，此不贅述。 [0014] 反射杯70的材質可與基板1〇〇相同，並可一體成型。本實 施例中的反射杯70與基板1〇〇分開成型。反射杯70的反射 開口角度可根據實際出光角進行設計。在其他實施例中 ，該反射杯70也可不需要，而使半導體發光元件20具有 較大的發光角度。 [0015] 半導體發光元件20可以是半導體雷射器、發光二極體等 元件。本發明中以發光二極體為例進行說明。半導體發 光元件20的材料可選自氮化鎵、氮化銦鎵、磷化鎵等半 導體發光材料’具體取決於實際的發光需求。優選地’ 本實施例中採用可發藍光的半導體材料製造半導體發光 元件20，以最終輸出理想的白光。半導體發光元件20玎 以是垂直型發光二極體，亦可以是正負焊點在同一侧的 發光二極體。圖5中所示的半導體發光元件20的正負焊點 在同一側，並採用導線9〇實現半導體發光元件20與基板 100上的兩個電極1〇、11的電連接。可以理解半導體發光 元件20在其他實施例中可通過覆晶的方式與電極10、I1 達成電性連接。 [0016] 螢光層30完全包覆在半導體發光元件2〇的周圍。所述螢 光層30由黏度約為5〇〇〇-50〇〇〇cps (厘泊）的液態封裝 100117511 表單編號A0101 第6頁/共16頁 1002029410-0 201248929 Ο [0017] 料5〇烘烤而成。由該種黏度範圍的液態封裝材料5〇可 也對營光層3〇進行封農，以保證良率。所述榮光層 备發樹脂（Silicone)以及螢光物質，所述螢光物 質可為釔鋁石榴石（YAG)或矽酸鹽（silicate)等其 他類型的螢光粉。其中螢光物質佔螢光層30的質量比例 為1〇%~4〇%。該種比例可充分保證螢光物質的絕對數量， 使半導體發光元件2〇可發出理想的白光。另外，螢光層 叹计為不完全包覆導線90 ,也即導線90的至少一部分 露出在螢光層30之外。因此，可以減少液態封裝材料50 的用量，以免浪費，進而節省成本。 封裝層60的材質可為矽樹脂（Silic〇ne)或環氧樹脂（ Epoxy) ’將所述材料填充在反射杯内並完全覆蓋螢光 層30，用以保護螢光層30及半導體發光元件20。需要指 出的是，在其他實施例中該封裝層6〇也可不需要。 [0018] 〇 [0019] 下面以上述實施例中的半導體發光元件封裝結構為例， 並結合其他附圖介紹其製造方法。 請參考圖1，提供基板100，所述基板1〇〇具有兩個電極 10、11 ’並形成一反射杯70。在本實施例中以基板1〇〇 形成反射杯70並且包含兩個電極、11予以說明，在其 他實施例中基板100可根據需要包含多個電極10、11，也 可不形成反射杯70。 請參考圖2，提供半導體發光元件2〇。所述半導體發光元 件20設置在反射杯70底部，並用導線90通過打線方式與 電極10、11達成電性連接； 100117511 表單編號A0101 第7頁/共16頁 1002029410-0 [0020] 201248929 [〇〇21]請參考圖3 ’利用點膠針200將一黏度為5000-50000cps 的液癌封裝材料50塗覆於半導體發光元件2〇周圍。液態 封裝材料50的用量使導線90的至少一部分外露為佳。所 述液封聚_材料5〇包含矽樹脂（siiicone)以及螢光物 質，所述螢光物質可為釔鋁石榴石（YAG)或矽酸鹽（201248929 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor light-emitting element, and more particularly to a package structure of a semiconductor light-emitting element and a method of fabricating the same. [Prior Art] Display Screen [〇〇〇2] Semiconductor light-emitting elements, such as light-emitting diodes, have been widely used in various fields before ♦ because of their luminous efficiency, small size, light weight, and environmental protection. , for example, as an indicator light, a light, etc. [0004] Before applying the light-emitting diode to the above various fields, it is necessary to perform a sealing # to protect the light-emitting one-pole wafer, thereby obtaining high luminous efficiency and long service life. The LED package process typically involves the use of a host or die casting method to cover the surface of the light emitting diode die with a liquid encapsulating material, followed by heat curing of the liquid encapsulating material to form an encapsulation layer. Fluorescent powder is also commonly added to the encapsulant in the industry to emit different colors of light with the LEDs. However, the light energy of the light-emitting diode excites (4) the light powder is limited. If the fluorescent powder in the sealed (four) material is used too much, the cost of the sample is increased, and the light emitted by the light body affects the luminous efficiency. m paper thousand guide way to save costs, but the package # material is too miscellaneous to reduce the packaging material to effectively cover the entire light-emitting diode, the second too y makes the packaging material difficult to reduce the k ^ yield. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a semi-conductive manufacturing method using the manufacturing method and the high-yield package.半导体Semiconductor package structure 100117511 Form No. A0101 Page 4 / Total 16 true 201248929 A semiconductor light-emitting device package structure includes a substrate, an electrode disposed on the substrate, a semiconductor fixed on the substrate and electrically connected to the electrode The light-emitting member has a fluorescent layer disposed on the substrate and coated with the conductive light-emitting element, and the fluorescent layer is baked by a liquid material having a viscosity of 5,000 to 50,000 cps. [0_- a method of manufacturing a semiconductor light emitting device package structure, the method comprising: providing a substrate, the substrate having an electrode; ❹ [G_Elcf conductor light-emitting element, the semiconductor light-emitting element being disposed on the substrate and electrically connected to the electrode Sexual connection; _9] using a dispensing needle to apply a liquid material having a viscosity of _Q_5 to the periphery of the semiconductor light-emitting element, the material comprising the fat-transferring material and the fluorescent substance; and [0010] baking the liquid state The material forms a wide range of fluorescent light. The semiconductor (4) structure of the present invention allows the phosphor layer to better cover the semiconductor light-emitting element by adjusting the dot of the optical layer recording state, thereby obtaining better packaging performance. At the same time, the manufacturing method adopts the method of dispensing, which can conveniently control the amount of liquid material, avoid waste of fluorescent materials, and can reduce cost. [Embodiment] [0012] Referring to FIG. 5, a semiconductor light emitting device package structure includes a substrate 1 having two electrodes 10, 11 disposed thereon, and a reflective cup 70. The bottom of the reflector cup 70 is provided with a semi-conductive light-emitting element 2〇. The semiconductor light emitting element 20 is electrically connected to the two electric boards iq and Η on the substrate 1A. The phosphor layer 30 is completely wrapped around the semiconductor first element 2〇. In addition, 100117511 Form No. A0101 Page 5 of 16 1002029410-0 201248929 There is also a layer of encapsulation layer 60 placed on the phosphor layer 30 and filled with the reflective cup 7〇. [〇〇13] The substrate may be made of a material having good thermal conductivity, such as metal or ceramic, to facilitate heat dissipation of the semiconductor light emitting element 20. If the substrate 1 is made of a metal material, it is necessary to consider the isolation of the substrate 100 from the two electrodes 10, 11, which is common knowledge in the art and will not be described here. [0014] The material of the reflective cup 70 can be the same as that of the substrate 1 and can be integrally formed. The reflector cup 70 in this embodiment is formed separately from the substrate 1〇〇. The reflection opening angle of the reflector cup 70 can be designed according to the actual light exit angle. In other embodiments, the reflector cup 70 may also be unnecessary, and the semiconductor light emitting element 20 has a larger angle of illumination. [0015] The semiconductor light emitting element 20 may be a semiconductor laser, a light emitting diode or the like. In the present invention, a light-emitting diode will be described as an example. The material of the semiconductor light-emitting element 20 may be selected from semiconductor luminescent materials such as gallium nitride, indium gallium nitride, gallium phosphide, etc. depending on the actual light-emitting requirements. Preferably, in the present embodiment, the semiconductor light-emitting element 20 is fabricated using a blue light-emitting semiconductor material to finally output desired white light. The semiconductor light emitting element 20A is a vertical type light emitting diode, and may be a light emitting diode having the same positive and negative solder joints on the same side. The positive and negative solder joints of the semiconductor light emitting element 20 shown in Fig. 5 are on the same side, and the electrical connection between the semiconductor light emitting element 20 and the two electrodes 1 and 11 on the substrate 100 is realized by the wires 9A. It can be understood that the semiconductor light emitting device 20 can be electrically connected to the electrodes 10, I1 by flip chip in other embodiments. [0016] The phosphor layer 30 is completely coated around the semiconductor light emitting element 2A. The phosphor layer 30 is made of a liquid package having a viscosity of about 5 〇〇〇 - 50 〇〇〇 cps (centipoise). 100117511 Form No. A0101 Page 6 / Total 16 Page 1002029410-0 201248929 Ο [0017] Baked. From the liquid encapsulation material of this viscosity range, the camping layer 3 can also be sealed to ensure the yield. The glory layer is a silicone resin and a fluorescent material, and the phosphor material may be other types of phosphor powder such as yttrium aluminum garnet (YAG) or silicate. The mass ratio of the fluorescent material to the fluorescent layer 30 is 1% to 4%. This ratio can sufficiently ensure the absolute amount of the fluorescent substance, so that the semiconductor light-emitting element 2 can emit ideal white light. In addition, the phosphor layer sighs that the wire 90 is not completely covered, i.e., at least a portion of the wire 90 is exposed outside of the phosphor layer 30. Therefore, the amount of the liquid encapsulating material 50 can be reduced to avoid waste, thereby saving costs. The material of the encapsulation layer 60 may be a silicone resin or an epoxy resin. The material is filled in the reflective cup and completely covers the phosphor layer 30 for protecting the phosphor layer 30 and the semiconductor light emitting device. 20. It should be noted that the encapsulation layer 6〇 may not be required in other embodiments. [0018] Hereinafter, the semiconductor light emitting element package structure in the above embodiment will be taken as an example, and the manufacturing method thereof will be described in conjunction with other drawings. Referring to Figure 1, a substrate 100 is provided having two electrodes 10, 11 ' and forming a reflective cup 70. In the present embodiment, the reflective cup 70 is formed by the substrate 1 并且 and includes two electrodes, 11 being explained. In other embodiments, the substrate 100 may include a plurality of electrodes 10, 11 as needed, or may not form the reflective cup 70. Referring to FIG. 2, a semiconductor light emitting element 2A is provided. The semiconductor light emitting element 20 is disposed at the bottom of the reflective cup 70, and is electrically connected to the electrodes 10 and 11 by wire bonding by a wire 90; 100117511 Form No. A0101 Page 7 / Total 16 Page 1002029410-0 [0020] 201248929 [〇〇 21] Please refer to FIG. 3 'Using the dispensing needle 200 to apply a liquid cancer encapsulating material 50 having a viscosity of 5000 to 50,000 cps around the semiconductor light emitting element 2''. The amount of liquid encapsulating material 50 is preferably such that at least a portion of the wire 90 is exposed. The liquid sealing material _ material 5 〇 comprises siiicone and a fluorescent substance, and the fluorescent substance may be yttrium aluminum garnet (YAG) or bismuth citrate (
Silicate)等其他類型的螢光粉。其中螢光物質佔螢光 層30的質量比例為1〇%-40%。在利用點膠針20Q塗覆液態 封裝材料5 0到半導體發光元件2 〇的周圍時，可採用開口 面積大於半導體發光元件2〇上表面的面積的點膠針2〇〇， 如此可增加液態封裝材料5〇在點膠時的面積，同時液態 〇 封裝材料50可更容易且快速的完全包覆半導體發光元件 20 〇 [0022] 請參考圖4，將液態封裝材料50點到半導體發光元件2〇的 周圍後，烘烤所述液態封裝材料5〇以形成螢光層3〇。液 態封裝材料50覆蓋半導體發光元件2〇後，立即將液態封 裝材料50烘烤定型，保證液態封裝材料5〇會在流離半導 體發光元件2 0前即固化。Silicate) and other types of phosphors. The mass ratio of the fluorescent material to the fluorescent layer 30 is from 1% to 40%. When the liquid encapsulating material 50 is applied to the periphery of the semiconductor light emitting element 2 by using the dispensing needle 20Q, the dispensing needle 2〇〇 having an opening area larger than the area of the upper surface of the semiconductor light emitting element 2 can be used, thereby increasing the liquid encapsulation. The area of the material 5 点 at the time of dispensing, while the liquid 〇 encapsulating material 50 can more completely and quickly completely cover the semiconductor light emitting element 20 002 [0022] Referring to FIG. 4, the liquid packaging material 50 is spotted to the semiconductor light emitting element 2 After the surroundings, the liquid encapsulating material 5 is baked to form a phosphor layer 3〇. Immediately after the liquid encapsulating material 50 covers the semiconductor light emitting element 2, the liquid encapsulating material 50 is baked and shaped to ensure that the liquid encapsulating material 5 is cured before flowing away from the semiconductor light emitting element 20.
QQ
[0023] 請參考圖5，再設置一封裝層60，所述封裝層6〇材質可為 矽樹脂（Silicone)或環氧樹脂（Ep〇xy)，填充於反 射杯70内並完全覆蓋螢光層3〇從而完成封裝。 [0024] 综上所述，本發明確已符合發明專利之要件，遂依法提 出專利申凊。惟，以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或=化 ，皆應涵蓋於以下申請專利範圍内。 1002029410-0 100117511 表單煸號A0101 第8頁/共ι6頁 201248929 【圖式簡單說明】 [0025] 圖1至圖5為本發明半導體發光元件封裝結構的製造方法 中各步驟所得的半導體發光元件封裝結構的剖視示意圖 〇 【主要元件符號說明】 [0026] 基板：100 [0027] 電極：1 〇、11 [0028] 半導體發光元件：20 [0029] 螢光層：30 [0030] 液悲封裝材料.5 0 [0031] 封裝層：60 [0032] 反射杯：7 0 [0033] 導線：90 [0034] 點膠針：200 ❹ 100117511 表單編號A0101 第9頁/共16頁 1002029410-0[0023] Referring to FIG. 5, an encapsulation layer 60 is further disposed. The encapsulation layer 6 can be made of silicone or epoxy (Ep〇xy), filled in the reflective cup 70 and completely covered with fluorescent light. Layer 3 turns to complete the package. [0024] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or modifications made by those skilled in the art in light of the spirit of the present invention are intended to be included within the scope of the following claims. 1002029410-0 100117511 Form nickname A0101 Page 8 / Total ι6 page 201248929 [Simplified illustration of the drawings] [0025] FIGS. 1 to 5 show a semiconductor light emitting device package obtained in each step of the method for fabricating a semiconductor light emitting element package structure according to the present invention. Schematic diagram of the structure 〇 [Main component symbol description] [0026] Substrate: 100 [0027] Electrode: 1 〇, 11 [0028] Semiconductor light-emitting element: 20 [0029] Fluorescent layer: 30 [0030] Liquid-cold packaging material .5 0 [0031] Encapsulation layer: 60 [0032] Reflective cup: 7 0 [0033] Conductor: 90 [0034] Dispensing needle: 200 ❹ 100117511 Form number A0101 Page 9 / Total 16 pages 1002029410-0