TWI614364B - 以氣相沉積來沉積的光阻劑以及對於此光阻劑的製造與微影系統 - Google Patents
以氣相沉積來沉積的光阻劑以及對於此光阻劑的製造與微影系統 Download PDFInfo
- Publication number
- TWI614364B TWI614364B TW103106591A TW103106591A TWI614364B TW I614364 B TWI614364 B TW I614364B TW 103106591 A TW103106591 A TW 103106591A TW 103106591 A TW103106591 A TW 103106591A TW I614364 B TWI614364 B TW I614364B
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist
- vapor deposited
- semiconductor wafer
- deposited photoresist
- vapor
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 76
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 22
- 238000001459 lithography Methods 0.000 title description 5
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002243 precursor Substances 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000003446 ligand Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 13
- 239000012702 metal oxide precursor Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 238000006467 substitution reaction Methods 0.000 claims description 3
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 238000010574 gas phase reaction Methods 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims description 2
- 238000000233 ultraviolet lithography Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 30
- 238000000034 method Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 229940123457 Free radical scavenger Drugs 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- SLPLCLDJTNLWPW-UHFFFAOYSA-N barium(2+);2-methylpropan-2-olate Chemical compound [Ba+2].CC(C)(C)[O-].CC(C)(C)[O-] SLPLCLDJTNLWPW-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical class [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361786042P | 2013-03-14 | 2013-03-14 | |
| US61/786,042 | 2013-03-14 | ||
| US14/139,457 | 2013-12-23 | ||
| US14/139,457 US9632411B2 (en) | 2013-03-14 | 2013-12-23 | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201439361A TW201439361A (zh) | 2014-10-16 |
| TWI614364B true TWI614364B (zh) | 2018-02-11 |
Family
ID=51525876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103106591A TWI614364B (zh) | 2013-03-14 | 2014-02-26 | 以氣相沉積來沉積的光阻劑以及對於此光阻劑的製造與微影系統 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9632411B2 (enExample) |
| JP (1) | JP6964979B2 (enExample) |
| KR (1) | KR102207228B1 (enExample) |
| CN (1) | CN105074572B (enExample) |
| SG (2) | SG10201707388RA (enExample) |
| TW (1) | TWI614364B (enExample) |
| WO (1) | WO2014152023A1 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| TWI639179B (zh) * | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| US9581890B2 (en) * | 2014-07-11 | 2017-02-28 | Applied Materials, Inc. | Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof |
| KR102346372B1 (ko) | 2015-10-13 | 2021-12-31 | 인프리아 코포레이션 | 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝 |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US10018920B2 (en) | 2016-03-04 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with a gas phase resist |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| KR102374206B1 (ko) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| JP7250803B2 (ja) * | 2018-03-02 | 2023-04-03 | エーエスエムエル ネザーランズ ビー．ブイ． | 材料のパターン付き層を形成するための方法及び装置 |
| SG11202009703QA (en) * | 2018-05-11 | 2020-10-29 | Lam Res Corp | Methods for making euv patternable hard masks |
| FI129480B (en) * | 2018-08-10 | 2022-03-15 | Pibond Oy | Silanol-containing organic-inorganic hybrid coatings for high resolution patterning |
| US10998191B2 (en) | 2018-11-13 | 2021-05-04 | International Business Machines Corporation | Graded hardmask interlayer for enhanced extreme ultraviolet performance |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| TWI892982B (zh) * | 2019-04-01 | 2025-08-11 | 荷蘭商Ａｓｍｌ荷蘭公司 | 極紫外（ｅｕｖ）光源、目標供應系統、及控制ｅｕｖ光源中轉換效率的方法 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| JP7618601B2 (ja) * | 2019-06-28 | 2025-01-21 | ラム リサーチ コーポレーション | 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト |
| KR20250007037A (ko) | 2020-01-15 | 2025-01-13 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| WO2021173557A1 (en) | 2020-02-28 | 2021-09-02 | Lam Research Corporation | Multi-layer hardmask for defect reduction in euv patterning |
| EP3875633A1 (en) * | 2020-03-03 | 2021-09-08 | Stichting Nederlandse Wetenschappelijk Onderzoek Instituten | Method and apparatus for forming a patterned layer of material |
| TWI876020B (zh) | 2020-04-03 | 2025-03-11 | 美商蘭姆研究公司 | 處理光阻的方法、以及用於沉積薄膜的設備 |
| US12416863B2 (en) | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US11621172B2 (en) | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| US12159787B2 (en) * | 2020-07-02 | 2024-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| US12222643B2 (en) | 2020-07-02 | 2025-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| CN116626993A (zh) | 2020-07-07 | 2023-08-22 | 朗姆研究公司 | 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺 |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| US20220199406A1 (en) * | 2020-12-17 | 2022-06-23 | Applied Materials, Inc. | Vapor deposition of carbon-doped metal oxides for use as photoresists |
| JP2024522485A (ja) | 2021-05-25 | 2024-06-21 | 東京エレクトロン株式会社 | 極端紫外線パターニングのための有機金属膜 |
| US12372871B2 (en) | 2021-11-09 | 2025-07-29 | Tokyo Electron Limited | EUV active films for EUV lithography |
| US20240027916A1 (en) * | 2022-07-21 | 2024-01-25 | Applied Materials, Inc. | Fingerprinting and process control of photosensitive film deposition chamber |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| CN117587380B (zh) * | 2023-11-20 | 2025-09-16 | 南开大学 | 一种使用分子层沉积制备晶圆级铝基-烯二醇干式光刻胶的方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040091618A1 (en) * | 2002-11-08 | 2004-05-13 | Park Han-Su | Photoresist depositon apparatus and method for forming photoresist film using the same |
Family Cites Families (104)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57143826A (en) * | 1981-02-28 | 1982-09-06 | Dainippon Printing Co Ltd | Formation of resist pattern on gapped semiconductor substrate |
| JPS57157522A (en) * | 1981-03-23 | 1982-09-29 | Nec Corp | Depositing method for resist film for photo-etching technique |
| JPS60109227A (ja) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | 薄膜のパタ−ン形成方法 |
| US4842675A (en) | 1986-07-07 | 1989-06-27 | Texas Instruments Incorporated | Integrated circuit isolation process |
| GB8921666D0 (en) | 1989-09-26 | 1989-11-08 | Peatgrange Ivd Limited | Ion vapour deposition apparatus and method |
| US5420067A (en) | 1990-09-28 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricatring sub-half-micron trenches and holes |
| JPH07254556A (ja) * | 1993-09-03 | 1995-10-03 | Hitachi Ltd | パターン形成方法および形成装置 |
| JPH07106224A (ja) * | 1993-10-01 | 1995-04-21 | Hitachi Ltd | パターン形成方法 |
| JPH07106234A (ja) * | 1993-10-07 | 1995-04-21 | Mitsubishi Electric Corp | レジストパターンの形成方法 |
| JPH07235481A (ja) * | 1994-02-25 | 1995-09-05 | Toray Ind Inc | 薄膜の製造方法 |
| US5645646A (en) | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
| US5792592A (en) * | 1996-05-24 | 1998-08-11 | Symetrix Corporation | Photosensitive liquid precursor solutions and use thereof in making thin films |
| US5928389A (en) | 1996-10-21 | 1999-07-27 | Applied Materials, Inc. | Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool |
| US6096100A (en) | 1997-12-12 | 2000-08-01 | Texas Instruments Incorporated | Method for processing wafers and cleaning wafer-handling implements |
| US6010916A (en) | 1997-12-05 | 2000-01-04 | Advanced Micro Devices, Inc. | Method for improving semiconductor wafer processing |
| US6140216A (en) | 1998-04-14 | 2000-10-31 | Advanced Micro Devices, Inc. | Post etch silicide formation using dielectric etchback after global planarization |
| US6142641A (en) | 1998-06-18 | 2000-11-07 | Ultratech Stepper, Inc. | Four-mirror extreme ultraviolet (EUV) lithography projection system |
| US6174651B1 (en) * | 1999-01-14 | 2001-01-16 | Steag Rtp Systems, Inc. | Method for depositing atomized materials onto a substrate utilizing light exposure for heating |
| US6749814B1 (en) | 1999-03-03 | 2004-06-15 | Symyx Technologies, Inc. | Chemical processing microsystems comprising parallel flow microreactors and methods for using same |
| JP2000331939A (ja) * | 1999-05-17 | 2000-11-30 | Applied Materials Inc | 成膜装置 |
| TW561279B (en) | 1999-07-02 | 2003-11-11 | Asml Netherlands Bv | Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation |
| US6319635B1 (en) | 1999-12-06 | 2001-11-20 | The Regents Of The University Of California | Mitigation of substrate defects in reticles using multilayer buffer layers |
| WO2002020864A2 (en) | 2000-06-16 | 2002-03-14 | Applied Materials, Inc. | System and method for depositing high dielectric constant materials and compatible conductive materials |
| JP2002090978A (ja) | 2000-09-12 | 2002-03-27 | Hoya Corp | 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置 |
| US6673524B2 (en) | 2000-11-17 | 2004-01-06 | Kouros Ghandehari | Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method |
| JP3939132B2 (ja) | 2000-11-22 | 2007-07-04 | Ｈｏｙａ株式会社 | 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法 |
| US6656643B2 (en) | 2001-02-20 | 2003-12-02 | Chartered Semiconductor Manufacturing Ltd. | Method of extreme ultraviolet mask engineering |
| US6840616B2 (en) | 2001-03-29 | 2005-01-11 | Scott Summers | Air folder adjuster apparatus and method |
| US20030008148A1 (en) | 2001-07-03 | 2003-01-09 | Sasa Bajt | Optimized capping layers for EUV multilayers |
| US7455955B2 (en) | 2002-02-27 | 2008-11-25 | Brewer Science Inc. | Planarization method for multi-layer lithography processing |
| US6734117B2 (en) | 2002-03-12 | 2004-05-11 | Nikon Corporation | Periodic clamping method and apparatus to reduce thermal stress in a wafer |
| US6835503B2 (en) | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
| US6806006B2 (en) | 2002-07-15 | 2004-10-19 | International Business Machines Corporation | Integrated cooling substrate for extreme ultraviolet reticle |
| US20040018733A1 (en) | 2002-07-23 | 2004-01-29 | Hak Baek Jae | Method of planarizing a surface of a semiconductor wafer |
| US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
| CN1501442A (zh) * | 2002-11-12 | 2004-06-02 | 阿泰技术有限公社 | 光刻胶沉积设备以及使用该设备形成光刻胶薄膜的方法 |
| JP2004172272A (ja) * | 2002-11-19 | 2004-06-17 | Nikon Corp | Ｅｕｖ露光装置及びｅｕｖ露光方法 |
| DE10302342A1 (de) | 2003-01-17 | 2004-08-05 | Schott Glas | Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür |
| US6908713B2 (en) | 2003-02-05 | 2005-06-21 | Intel Corporation | EUV mask blank defect mitigation |
| US7026076B2 (en) | 2003-03-03 | 2006-04-11 | Freescale Semiconductor, Inc. | Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC |
| DE10317792A1 (de) | 2003-04-16 | 2004-11-11 | Schott Glas | Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung |
| TW200506093A (en) * | 2003-04-21 | 2005-02-16 | Aviza Tech Inc | System and method for forming multi-component films |
| SG115693A1 (en) | 2003-05-21 | 2005-10-28 | Asml Netherlands Bv | Method for coating a substrate for euv lithography and substrate with photoresist layer |
| WO2004106986A2 (en) | 2003-05-29 | 2004-12-09 | Applied Materials Inc. | Maskless fabrication of waveguide mirrors |
| KR100520222B1 (ko) | 2003-06-23 | 2005-10-11 | 삼성전자주식회사 | 반도체 소자에서의 듀얼 게이트 산화막 구조 및 그에 따른형성방법 |
| US7326502B2 (en) | 2003-09-18 | 2008-02-05 | Intel Corporation | Multilayer coatings for EUV mask substrates |
| KR100680405B1 (ko) | 2003-11-19 | 2007-02-08 | 주식회사 하이닉스반도체 | Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법 |
| US7005227B2 (en) | 2004-01-21 | 2006-02-28 | Intel Corporation | One component EUV photoresist |
| US7193228B2 (en) | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
| JP4716193B2 (ja) * | 2004-03-15 | 2011-07-06 | 宇部興産株式会社 | β−ジケトナトを配位子とする金属錯体 |
| JP4542807B2 (ja) * | 2004-03-31 | 2010-09-15 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびにゲート絶縁膜の形成方法 |
| US7198872B2 (en) | 2004-05-25 | 2007-04-03 | International Business Machines Corporation | Light scattering EUVL mask |
| US20060024589A1 (en) | 2004-07-28 | 2006-02-02 | Siegfried Schwarzl | Passivation of multi-layer mirror for extreme ultraviolet lithography |
| KR20070054651A (ko) | 2004-09-17 | 2007-05-29 | 아사히 가라스 가부시키가이샤 | Ｅｕｖ 리소그래피용 반사형 마스크 블랭크스 및 그 제조방법 |
| US8293430B2 (en) | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
| US7336416B2 (en) | 2005-04-27 | 2008-02-26 | Asml Netherlands B.V. | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
| US20060275547A1 (en) | 2005-06-01 | 2006-12-07 | Lee Chung J | Vapor Phase Deposition System and Method |
| US20060274474A1 (en) * | 2005-06-01 | 2006-12-07 | Lee Chung J | Substrate Holder |
| US7432201B2 (en) | 2005-07-19 | 2008-10-07 | Applied Materials, Inc. | Hybrid PVD-CVD system |
| DE102005052000B3 (de) | 2005-10-31 | 2007-07-05 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit einer Kontaktstruktur auf der Grundlage von Kupfer und Wolfram |
| US7678511B2 (en) | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
| US7712333B2 (en) | 2006-03-29 | 2010-05-11 | Asahi Glass Company, Limited | Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography |
| US7736820B2 (en) | 2006-05-05 | 2010-06-15 | Asml Netherlands B.V. | Anti-reflection coating for an EUV mask |
| US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
| JP4801550B2 (ja) * | 2006-09-26 | 2011-10-26 | 富士通株式会社 | レジスト組成物、レジストパターンの形成方法、及び半導体装置の製造方法 |
| US7892719B2 (en) | 2006-11-03 | 2011-02-22 | Intel Corporation | Photonic crystal EUV photoresists |
| WO2008065821A1 (en) | 2006-11-27 | 2008-06-05 | Nikon Corporation | Optical element, exposure unit utilizing the same and process for device production |
| JP2008135090A (ja) * | 2006-11-27 | 2008-06-12 | Canon Inc | レジスト、これを用いた光ディスク用スタンパの製造方法、及び光ディスク用スタンパ |
| US20090278233A1 (en) | 2007-07-26 | 2009-11-12 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
| WO2009031232A1 (ja) | 2007-09-07 | 2009-03-12 | Canon Anelva Corporation | スパッタリング方法および装置 |
| JP5039495B2 (ja) * | 2007-10-04 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | マスクブランク検査方法、反射型露光マスクの製造方法、反射型露光方法および半導体集積回路の製造方法 |
| US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
| US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
| US20090176367A1 (en) | 2008-01-08 | 2009-07-09 | Heidi Baks | OPTIMIZED SiCN CAPPING LAYER |
| KR20090103847A (ko) * | 2008-03-28 | 2009-10-01 | 캐논 가부시끼가이샤 | 노광 장치 및 디바이스 제조 방법 |
| JP2009245505A (ja) * | 2008-03-31 | 2009-10-22 | Pioneer Electronic Corp | 光学情報記録媒体製造用の原盤 |
| US8512916B2 (en) | 2008-03-31 | 2013-08-20 | Hoya Corporation | Photomask blank, photomask, and method for manufacturing photomask blank |
| US8105954B2 (en) * | 2008-10-20 | 2012-01-31 | aiwan Semiconductor Manufacturing Company, Ltd. | System and method of vapor deposition |
| JP2010122305A (ja) * | 2008-11-17 | 2010-06-03 | Sony Corp | 露光装置及び露光方法並びに微細加工装置及び微細加工方法 |
| JP2010170011A (ja) | 2009-01-26 | 2010-08-05 | Hoya Corp | フォトマスクの修正方法 |
| JP2011053566A (ja) * | 2009-09-03 | 2011-03-17 | Sony Corp | 現像液、エッチング液および微細加工体の製造方法 |
| CN102019266A (zh) | 2009-09-17 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 涂层材料的涂布方法 |
| EP2513686B1 (en) | 2009-12-15 | 2019-04-10 | Carl Zeiss SMT GmbH | Reflective optical element for euv lithography |
| US20110151677A1 (en) | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
| WO2011125827A1 (ja) * | 2010-04-02 | 2011-10-13 | 株式会社ニコン | 光源装置、光学装置、露光装置、デバイス製造方法、照明方法、露光方法、および光学装置の製造方法 |
| US20120009765A1 (en) | 2010-07-12 | 2012-01-12 | Applied Materials, Inc. | Compartmentalized chamber |
| WO2012014904A1 (ja) | 2010-07-27 | 2012-02-02 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射層付基板、およびｅｕｖリソグラフィ用反射型マスクブランク |
| TW201224190A (en) | 2010-10-06 | 2012-06-16 | Applied Materials Inc | Atomic layer deposition of photoresist materials and hard mask precursors |
| KR20120042169A (ko) | 2010-10-22 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 액정 표시 장치 및 그 제조 방법 |
| JP6013720B2 (ja) | 2010-11-22 | 2016-10-25 | 芝浦メカトロニクス株式会社 | 反射型マスクの製造方法、および反射型マスクの製造装置 |
| US8475977B2 (en) | 2010-12-02 | 2013-07-02 | Intermolecular, Inc | Protective cap for extreme ultraviolet lithography masks |
| US8562794B2 (en) | 2010-12-14 | 2013-10-22 | Asahi Glass Company, Limited | Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank |
| NL2007768A (en) | 2010-12-14 | 2012-06-18 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
| CN103069056B (zh) | 2011-03-14 | 2015-11-25 | 富士电机株式会社 | 氧化物基材及其制备方法 |
| JP2012248664A (ja) * | 2011-05-27 | 2012-12-13 | Hitachi Cable Ltd | 気相成長装置及び気相成長方法、並びにエピタキシャルウェハ |
| KR101909567B1 (ko) * | 2011-07-08 | 2018-10-18 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트 |
| NL2009487A (en) | 2011-10-14 | 2013-04-16 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
| US8691476B2 (en) | 2011-12-16 | 2014-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV mask and method for forming the same |
| KR101840846B1 (ko) | 2012-02-15 | 2018-03-21 | 삼성전자주식회사 | 관통전극을 갖는 반도체 소자 및 그 제조방법 |
| US9051649B2 (en) * | 2013-03-11 | 2015-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor film deposition apparatus and method with improved heater cooling efficiency |
| US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| US9417515B2 (en) | 2013-03-14 | 2016-08-16 | Applied Materials, Inc. | Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor |
| US9612521B2 (en) | 2013-03-12 | 2017-04-04 | Applied Materials, Inc. | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
-
2013
- 2013-12-23 US US14/139,457 patent/US9632411B2/en active Active
-
2014
- 2014-02-26 TW TW103106591A patent/TWI614364B/zh active
- 2014-03-13 CN CN201480010168.9A patent/CN105074572B/zh active Active
- 2014-03-13 SG SG10201707388RA patent/SG10201707388RA/en unknown
- 2014-03-13 SG SG11201506506PA patent/SG11201506506PA/en unknown
- 2014-03-13 WO PCT/US2014/026826 patent/WO2014152023A1/en not_active Ceased
- 2014-03-13 JP JP2016502257A patent/JP6964979B2/ja not_active Expired - Fee Related
- 2014-03-13 KR KR1020157027664A patent/KR102207228B1/ko active Active
-
2016
- 2016-11-21 US US15/357,085 patent/US9829805B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040091618A1 (en) * | 2002-11-08 | 2004-05-13 | Park Han-Su | Photoresist depositon apparatus and method for forming photoresist film using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102207228B1 (ko) | 2021-01-25 |
| JP6964979B2 (ja) | 2021-11-10 |
| US9632411B2 (en) | 2017-04-25 |
| CN105074572A (zh) | 2015-11-18 |
| US9829805B2 (en) | 2017-11-28 |
| SG11201506506PA (en) | 2015-09-29 |
| CN105074572B (zh) | 2019-11-26 |
| SG10201707388RA (en) | 2017-10-30 |
| JP2016517633A (ja) | 2016-06-16 |
| US20140268082A1 (en) | 2014-09-18 |
| WO2014152023A1 (en) | 2014-09-25 |
| US20170068174A1 (en) | 2017-03-09 |
| TW201439361A (zh) | 2014-10-16 |
| KR20150129781A (ko) | 2015-11-20 |
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