KR102207228B1 - 기상 증착에 의해 증착되는 포토레지스트, 및 이를 위한 제조 및 리소그래피 시스템들 - Google Patents

기상 증착에 의해 증착되는 포토레지스트, 및 이를 위한 제조 및 리소그래피 시스템들 Download PDF

Info

Publication number
KR102207228B1
KR102207228B1 KR1020157027664A KR20157027664A KR102207228B1 KR 102207228 B1 KR102207228 B1 KR 102207228B1 KR 1020157027664 A KR1020157027664 A KR 1020157027664A KR 20157027664 A KR20157027664 A KR 20157027664A KR 102207228 B1 KR102207228 B1 KR 102207228B1
Authority
KR
South Korea
Prior art keywords
photoresist
vapor
deposited
semiconductor wafer
extreme ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157027664A
Other languages
English (en)
Korean (ko)
Other versions
KR20150129781A (ko
Inventor
티모시 마이클슨
티모시 더블유. 와이드먼
배리 리 친
마지드 에이. 포아드
폴 데아톤
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20150129781A publication Critical patent/KR20150129781A/ko
Application granted granted Critical
Publication of KR102207228B1 publication Critical patent/KR102207228B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • H01L21/0273—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020157027664A 2013-03-14 2014-03-13 기상 증착에 의해 증착되는 포토레지스트, 및 이를 위한 제조 및 리소그래피 시스템들 Active KR102207228B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361786042P 2013-03-14 2013-03-14
US61/786,042 2013-03-14
US14/139,457 US9632411B2 (en) 2013-03-14 2013-12-23 Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US14/139,457 2013-12-23
PCT/US2014/026826 WO2014152023A1 (en) 2013-03-14 2014-03-13 Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor

Publications (2)

Publication Number Publication Date
KR20150129781A KR20150129781A (ko) 2015-11-20
KR102207228B1 true KR102207228B1 (ko) 2021-01-25

Family

ID=51525876

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157027664A Active KR102207228B1 (ko) 2013-03-14 2014-03-13 기상 증착에 의해 증착되는 포토레지스트, 및 이를 위한 제조 및 리소그래피 시스템들

Country Status (7)

Country Link
US (2) US9632411B2 (enExample)
JP (1) JP6964979B2 (enExample)
KR (1) KR102207228B1 (enExample)
CN (1) CN105074572B (enExample)
SG (2) SG11201506506PA (enExample)
TW (1) TWI614364B (enExample)
WO (1) WO2014152023A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
JP6495025B2 (ja) 2014-01-31 2019-04-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 真空統合ハードマスク処理および装置
US9581890B2 (en) * 2014-07-11 2017-02-28 Applied Materials, Inc. Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
KR102708400B1 (ko) * 2015-10-13 2024-09-20 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물,전구체 및 패터닝
US9996004B2 (en) * 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
US10018920B2 (en) * 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP7250803B2 (ja) * 2018-03-02 2023-04-03 エーエスエムエル ネザーランズ ビー．ブイ． 材料のパターン付き層を形成するための方法及び装置
WO2019217749A1 (en) * 2018-05-11 2019-11-14 Lam Research Corporation Methods for making euv patternable hard masks
FI129480B (en) * 2018-08-10 2022-03-15 Pibond Oy Silanol-containing organic-inorganic hybrid coatings for high resolution patterning
US10998191B2 (en) 2018-11-13 2021-05-04 International Business Machines Corporation Graded hardmask interlayer for enhanced extreme ultraviolet performance
KR102955829B1 (ko) 2018-11-14 2026-04-23 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
US12125711B2 (en) 2019-03-18 2024-10-22 Lam Research Corporation Reducing roughness of extreme ultraviolet lithography resists
TWI892982B (zh) * 2019-04-01 2025-08-11 荷蘭商Ａｓｍｌ荷蘭公司 極紫外（ｅｕｖ）光源、目標供應系統、及控制ｅｕｖ光源中轉換效率的方法
WO2020223011A1 (en) 2019-04-30 2020-11-05 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
TWI849159B (zh) 2019-06-28 2024-07-21 美商蘭姆研究公司 光阻膜的乾式腔室清潔
KR20250160237A (ko) * 2019-06-28 2025-11-11 램 리써치 코포레이션 복수의 패터닝 복사-흡수 엘리먼트들 및/또는 수직 조성 경사를 갖는 포토레지스트
US12601974B2 (en) 2019-06-28 2026-04-14 Lam Research Corporation Bake strategies to enhance lithographic performance of metal-containing resist
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
EP3875633A1 (en) * 2020-03-03 2021-09-08 Stichting Nederlandse Wetenschappelijk Onderzoek Instituten Method and apparatus for forming a patterned layer of material
CN115362414A (zh) 2020-04-03 2022-11-18 朗姆研究公司 用于增强euv光刻性能的暴露前光致抗蚀剂固化
JP2023530299A (ja) 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
US12159787B2 (en) * 2020-07-02 2024-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
US12222643B2 (en) 2020-07-02 2025-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR102673863B1 (ko) 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
KR20250142946A (ko) 2020-12-08 2025-09-30 램 리써치 코포레이션 유기 증기를 사용한 포토레지스트 현상
US20220199406A1 (en) * 2020-12-17 2022-06-23 Applied Materials, Inc. Vapor deposition of carbon-doped metal oxides for use as photoresists
WO2022251029A1 (en) 2021-05-25 2022-12-01 Tokyo Electron Limited Metalorganic films for extreme ultraviolet patterning
WO2022265874A1 (en) 2021-06-17 2022-12-22 Tokyo Electron Limited Dry resist system and method of using
US12372871B2 (en) 2021-11-09 2025-07-29 Tokyo Electron Limited EUV active films for EUV lithography
US12504692B2 (en) 2022-07-01 2025-12-23 Lam Research Corporation Cyclic development of metal oxide based photoresist for etch stop deterrence
US20240027916A1 (en) * 2022-07-21 2024-01-25 Applied Materials, Inc. Fingerprinting and process control of photosensitive film deposition chamber
EP4681251A1 (en) 2023-03-17 2026-01-21 LAM Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
US12690418B2 (en) 2023-05-31 2026-07-21 Applied Materials, Inc. Apparatus for clamping a substrate on a mono-polar electrostatic chuck for deposition of photoresist films
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상
CN117587380B (zh) * 2023-11-20 2025-09-16 南开大学 一种使用分子层沉积制备晶圆级铝基-烯二醇干式光刻胶的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040091618A1 (en) * 2002-11-08 2004-05-13 Park Han-Su Photoresist depositon apparatus and method for forming photoresist film using the same
JP2007514293A (ja) * 2003-04-21 2007-05-31 アヴィザ テクノロジー インコーポレイテッド 多成分誘電体膜を形成するためのシステム及び方法
US20070141257A1 (en) * 2004-03-31 2007-06-21 Tokyo Electron Limited Method and apparatus for forming metal silicate film, and method for manufacturing semiconductor device

Family Cites Families (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143826A (en) * 1981-02-28 1982-09-06 Dainippon Printing Co Ltd Formation of resist pattern on gapped semiconductor substrate
JPS57157522A (en) * 1981-03-23 1982-09-29 Nec Corp Depositing method for resist film for photo-etching technique
JPS60109227A (ja) * 1983-11-18 1985-06-14 Hitachi Ltd 薄膜のパタ−ン形成方法
US4842675A (en) 1986-07-07 1989-06-27 Texas Instruments Incorporated Integrated circuit isolation process
GB8921666D0 (en) 1989-09-26 1989-11-08 Peatgrange Ivd Limited Ion vapour deposition apparatus and method
US5420067A (en) 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
JPH07254556A (ja) * 1993-09-03 1995-10-03 Hitachi Ltd パターン形成方法および形成装置
JPH07106224A (ja) * 1993-10-01 1995-04-21 Hitachi Ltd パターン形成方法
JPH07106234A (ja) * 1993-10-07 1995-04-21 Mitsubishi Electric Corp レジストパターンの形成方法
US5645646A (en) 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
JPH07235481A (ja) * 1994-02-25 1995-09-05 Toray Ind Inc 薄膜の製造方法
US5792592A (en) * 1996-05-24 1998-08-11 Symetrix Corporation Photosensitive liquid precursor solutions and use thereof in making thin films
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US6096100A (en) 1997-12-12 2000-08-01 Texas Instruments Incorporated Method for processing wafers and cleaning wafer-handling implements
US6010916A (en) 1997-12-05 2000-01-04 Advanced Micro Devices, Inc. Method for improving semiconductor wafer processing
US6140216A (en) 1998-04-14 2000-10-31 Advanced Micro Devices, Inc. Post etch silicide formation using dielectric etchback after global planarization
US6142641A (en) 1998-06-18 2000-11-07 Ultratech Stepper, Inc. Four-mirror extreme ultraviolet (EUV) lithography projection system
US6174651B1 (en) * 1999-01-14 2001-01-16 Steag Rtp Systems, Inc. Method for depositing atomized materials onto a substrate utilizing light exposure for heating
US6749814B1 (en) 1999-03-03 2004-06-15 Symyx Technologies, Inc. Chemical processing microsystems comprising parallel flow microreactors and methods for using same
JP2000331939A (ja) * 1999-05-17 2000-11-30 Applied Materials Inc 成膜装置
TW561279B (en) 1999-07-02 2003-11-11 Asml Netherlands Bv Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation
US6319635B1 (en) 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
US20020015855A1 (en) 2000-06-16 2002-02-07 Talex Sajoto System and method for depositing high dielectric constant materials and compatible conductive materials
JP2002090978A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
US6673524B2 (en) 2000-11-17 2004-01-06 Kouros Ghandehari Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method
JP3939132B2 (ja) 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
US6840616B2 (en) 2001-03-29 2005-01-11 Scott Summers Air folder adjuster apparatus and method
US20030008148A1 (en) 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
US7455955B2 (en) 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
US6734117B2 (en) 2002-03-12 2004-05-11 Nikon Corporation Periodic clamping method and apparatus to reduce thermal stress in a wafer
US6835503B2 (en) 2002-04-12 2004-12-28 Micron Technology, Inc. Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
US6806006B2 (en) 2002-07-15 2004-10-19 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
US20040018733A1 (en) 2002-07-23 2004-01-29 Hak Baek Jae Method of planarizing a surface of a semiconductor wafer
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
CN1501442A (zh) * 2002-11-12 2004-06-02 阿泰技术有限公社 光刻胶沉积设备以及使用该设备形成光刻胶薄膜的方法
JP2004172272A (ja) * 2002-11-19 2004-06-17 Nikon Corp Ｅｕｖ露光装置及びｅｕｖ露光方法
DE10302342A1 (de) 2003-01-17 2004-08-05 Schott Glas Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür
US6908713B2 (en) 2003-02-05 2005-06-21 Intel Corporation EUV mask blank defect mitigation
US7026076B2 (en) 2003-03-03 2006-04-11 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC
DE10317792A1 (de) 2003-04-16 2004-11-11 Schott Glas Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung
SG115693A1 (en) 2003-05-21 2005-10-28 Asml Netherlands Bv Method for coating a substrate for euv lithography and substrate with photoresist layer
WO2004106986A2 (en) 2003-05-29 2004-12-09 Applied Materials Inc. Maskless fabrication of waveguide mirrors
KR100520222B1 (ko) 2003-06-23 2005-10-11 삼성전자주식회사 반도체 소자에서의 듀얼 게이트 산화막 구조 및 그에 따른형성방법
US7326502B2 (en) 2003-09-18 2008-02-05 Intel Corporation Multilayer coatings for EUV mask substrates
KR100680405B1 (ko) 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
US7005227B2 (en) 2004-01-21 2006-02-28 Intel Corporation One component EUV photoresist
US7193228B2 (en) 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
US7595414B2 (en) * 2004-03-15 2009-09-29 Ube Industries, Ltd. Metal complex compound comprising β-diketonato ligand
US7198872B2 (en) 2004-05-25 2007-04-03 International Business Machines Corporation Light scattering EUVL mask
US20060024589A1 (en) 2004-07-28 2006-02-02 Siegfried Schwarzl Passivation of multi-layer mirror for extreme ultraviolet lithography
EP1791168A1 (en) 2004-09-17 2007-05-30 Asahi Glass Company, Limited Reflective mask blank for euv lithography and method for producing same
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
US7336416B2 (en) 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
US20060275547A1 (en) 2005-06-01 2006-12-07 Lee Chung J Vapor Phase Deposition System and Method
US20060274474A1 (en) * 2005-06-01 2006-12-07 Lee Chung J Substrate Holder
US7432201B2 (en) 2005-07-19 2008-10-07 Applied Materials, Inc. Hybrid PVD-CVD system
DE102005052000B3 (de) 2005-10-31 2007-07-05 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit einer Kontaktstruktur auf der Grundlage von Kupfer und Wolfram
US7678511B2 (en) 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
US7712333B2 (en) 2006-03-29 2010-05-11 Asahi Glass Company, Limited Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography
US7736820B2 (en) 2006-05-05 2010-06-15 Asml Netherlands B.V. Anti-reflection coating for an EUV mask
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
JP4801550B2 (ja) * 2006-09-26 2011-10-26 富士通株式会社 レジスト組成物、レジストパターンの形成方法、及び半導体装置の製造方法
US7892719B2 (en) 2006-11-03 2011-02-22 Intel Corporation Photonic crystal EUV photoresists
KR20090094322A (ko) 2006-11-27 2009-09-04 가부시키가이샤 니콘 광학 소자, 이것을 사용한 노광 장치, 및 디바이스 제조 방법
JP2008135090A (ja) * 2006-11-27 2008-06-12 Canon Inc レジスト、これを用いた光ディスク用スタンパの製造方法、及び光ディスク用スタンパ
US20090278233A1 (en) 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
WO2009031232A1 (ja) 2007-09-07 2009-03-12 Canon Anelva Corporation スパッタリング方法および装置
JP5039495B2 (ja) * 2007-10-04 2012-10-03 ルネサスエレクトロニクス株式会社 マスクブランク検査方法、反射型露光マスクの製造方法、反射型露光方法および半導体集積回路の製造方法
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US20090176367A1 (en) 2008-01-08 2009-07-09 Heidi Baks OPTIMIZED SiCN CAPPING LAYER
KR20090103847A (ko) * 2008-03-28 2009-10-01 캐논 가부시끼가이샤 노광 장치 및 디바이스 제조 방법
US8512916B2 (en) 2008-03-31 2013-08-20 Hoya Corporation Photomask blank, photomask, and method for manufacturing photomask blank
JP2009245505A (ja) * 2008-03-31 2009-10-22 Pioneer Electronic Corp 光学情報記録媒体製造用の原盤
US8105954B2 (en) * 2008-10-20 2012-01-31 aiwan Semiconductor Manufacturing Company, Ltd. System and method of vapor deposition
JP2010122305A (ja) * 2008-11-17 2010-06-03 Sony Corp 露光装置及び露光方法並びに微細加工装置及び微細加工方法
JP2010170011A (ja) 2009-01-26 2010-08-05 Hoya Corp フォトマスクの修正方法
JP2011053566A (ja) * 2009-09-03 2011-03-17 Sony Corp 現像液、エッチング液および微細加工体の製造方法
CN102019266A (zh) 2009-09-17 2011-04-20 中芯国际集成电路制造(上海)有限公司 涂层材料的涂布方法
EP2513686B1 (en) 2009-12-15 2019-04-10 Carl Zeiss SMT GmbH Reflective optical element for euv lithography
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
KR101944655B1 (ko) * 2010-04-02 2019-01-31 가부시키가이샤 니콘 조명 광학계, 광학 장치, 노광 방법 및 디바이스 제조 방법
TW201204868A (en) 2010-07-12 2012-02-01 Applied Materials Inc Compartmentalized chamber
EP2600388B1 (en) 2010-07-27 2014-10-08 Asahi Glass Company, Limited Substrate provided with reflecting layer for euv lithography, and reflective mask blank for euv lithography
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
KR20120042169A (ko) 2010-10-22 2012-05-03 삼성모바일디스플레이주식회사 액정 표시 장치 및 그 제조 방법
JP6013720B2 (ja) 2010-11-22 2016-10-25 芝浦メカトロニクス株式会社 反射型マスクの製造方法、および反射型マスクの製造装置
US8475977B2 (en) 2010-12-02 2013-07-02 Intermolecular, Inc Protective cap for extreme ultraviolet lithography masks
US8562794B2 (en) 2010-12-14 2013-10-22 Asahi Glass Company, Limited Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank
NL2007768A (en) 2010-12-14 2012-06-18 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
WO2012124506A1 (ja) 2011-03-14 2012-09-20 富士電機株式会社 酸化物基板およびその製造方法
JP2012248664A (ja) * 2011-05-27 2012-12-13 Hitachi Cable Ltd 気相成長装置及び気相成長方法、並びにエピタキシャルウェハ
JP6236000B2 (ja) * 2011-07-08 2017-11-22 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト
NL2009487A (en) 2011-10-14 2013-04-16 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
US8691476B2 (en) 2011-12-16 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and method for forming the same
KR101840846B1 (ko) 2012-02-15 2018-03-21 삼성전자주식회사 관통전극을 갖는 반도체 소자 및 그 제조방법
US9051649B2 (en) * 2013-03-11 2015-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film deposition apparatus and method with improved heater cooling efficiency
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040091618A1 (en) * 2002-11-08 2004-05-13 Park Han-Su Photoresist depositon apparatus and method for forming photoresist film using the same
JP2007514293A (ja) * 2003-04-21 2007-05-31 アヴィザ テクノロジー インコーポレイテッド 多成分誘電体膜を形成するためのシステム及び方法
US20070141257A1 (en) * 2004-03-31 2007-06-21 Tokyo Electron Limited Method and apparatus for forming metal silicate film, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
TW201439361A (zh) 2014-10-16
US20170068174A1 (en) 2017-03-09
JP2016517633A (ja) 2016-06-16
US9829805B2 (en) 2017-11-28
TWI614364B (zh) 2018-02-11
US20140268082A1 (en) 2014-09-18
JP6964979B2 (ja) 2021-11-10
CN105074572A (zh) 2015-11-18
KR20150129781A (ko) 2015-11-20
CN105074572B (zh) 2019-11-26
SG10201707388RA (en) 2017-10-30
WO2014152023A1 (en) 2014-09-25
US9632411B2 (en) 2017-04-25
SG11201506506PA (en) 2015-09-29

Similar Documents

Publication Publication Date Title
US9829805B2 (en) Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
KR102571376B1 (ko) 포토레지스트층 표면 처리, 캡층, 및 포토레지스트 패턴을 형성하는 방법
KR102405489B1 (ko) 반도체 디바이스 제조 방법
KR102710407B1 (ko) 포토레지스트층 탈기 방지
KR102630481B1 (ko) 반도체 디바이스 제조 방법
CN113109995B (zh) 制造半导体器件的方法
KR102499934B1 (ko) 반도체 디바이스를 제조하는 방법
US20230375920A1 (en) Method of manufacturing a semiconductor device
TWI799820B (zh) 在光阻層中形成圖案的方法及半導體裝置的製造方法
KR20240012409A (ko) 극자외선 패터닝을 위한 유기금속 막
KR20230170786A (ko) 저 노출 선량의 euv 방사선을 위한 고 양자 효율 건식 레지스트
US20240385523A1 (en) Method of manufacturing a semiconductor device
US20240045336A1 (en) Method for forming resist pattern by using extreme ultraviolet light and method for forming pattern by using the resist pattern as mask
US20250362603A1 (en) Photoresist underlayer materials and associated methods
CN117008432A (zh) 制造半导体器件的方法和半导体器件制造工具

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

X091 Application refused [patent]
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000